DNA90YA2200NA

3~
High Voltage Standard Rectifier Rectifier
VRRM = 2200 V
I DAV = 90 A
I FSM = 370 A

Half 3~ Bridge, Common Anode

Part number

DNA90YA2200NA

Backside: isolated

3 2

Features / Advantages: Applications: Package: SOT-227B (minibloc)

● Planar passivated chips ● Diode for main rectification ● Isolation Voltage: 3000 V~
● Very low leakage current ● For single and three phase ● Industry standard outline
● Very low forward voltage drop bridge configurations ● RoHS compliant
● Improved thermal behaviour ● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a

© 2013 IXYS all rights reserved

 DNA90YA2200NA

Rectifier Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 2300 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2200 V
IR reverse current, drain current VR = 2200 V TVJ = 25°C 100 µA
VR = 2200 V TVJ = 150°C 1.5 mA
VF forward voltage drop IF = 30 A TVJ = 25°C 1.23 V
IF = 90 A 1.70 V
IF = 30 A TVJ = 125 °C 1.21 V
IF = 90 A 1.85 V
I DAV bridge output current TC = 85°C T VJ = 150 °C 90 A
rectangular d=⅓
VF0 threshold voltage TVJ = 150 °C 0.86 V
for power loss calculation only
rF slope resistance 11.4 mΩ
R thJC thermal resistance junction to case 1.2 K/W
R thCH thermal resistance case to heatsink 0.10 K/W
Ptot total power dissipation TC = 25°C 100 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A
t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A
t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A
I²t value for fusing t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 665 A²s
t = 10 ms; (50 Hz), sine TVJ = 150 °C 495 A²s
t = 8,3 ms; (60 Hz), sine VR = 0 V 480 A²s
CJ junction capacitance VR = 700 V; f = 1 MHz TVJ = 25°C 7 pF

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a

© 2013 IXYS all rights reserved

 DNA90YA2200NA

Package SOT-227B (minibloc) Ratings

Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 150 A
Tstg storage temperature -40 150 °C
T VJ virtual junction temperature -40 150 °C
Weight 30 g
MD mounting torque 1.1 1.5 Nm
MT terminal torque 1.1 1.5 Nm
d Spp/App terminal to terminal 10.5 3.2 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 8.6 6.8 mm
VISOL isolation voltage t = 1 second 3000 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 2500 V

Product Marking Part number

D = Diode
N = High Voltage Standard Rectifier
Logo abcde Part No. A
90
=
=
(>= 2000V)
Current Rating [A]
YYWW Z XXXXXX YA = Half 3~ Bridge, Common Anode
2200 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
DateCode Assembly Code
Assembly Line

Ordering Part Number Marking on Product Delivery Mode Quantity Code No.
Standard DNA90YA2200NA DNA90YA2200NA Tube 10 513730

Similar Part Package Voltage class

DNA90YC2200NA SOT-227B (minibloc) 2200

Equivalent Circuits for Simulation * on die level T VJ = 150°C

V0 Rectifier
I R0

V 0 max threshold voltage 0.86 V

R 0 max slope resistance * 9.5 mΩ

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a

© 2013 IXYS all rights reserved

 DNA90YA2200NA

Outlines SOT-227B (minibloc)

3 2

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a

© 2013 IXYS all rights reserved

 DNA90YA2200NA

Rectifier
120 300 103
TVJ = 150°C VR = 0 V
TVJ = 125°C
100 TVJ = 25°C
TVJ = 45°C
80 250 TVJ = 45°C
IF IFSM 2
It
60
[A] [A] 2
[A s] TVJ = 150°C
TVJ = 150°C
40 200

20
50 Hz, 80% VRRM
0 150 102
0.5 1.0 1.5 2.0 2.5 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 910
VF [V] t [s] t [ms]
2
Fig. 1 Forward current versus Fig. 2 Surge overload current Fig. 3 I t versus time per diode
voltage drop per diode

80
50 RthKA =
0.6 K/W 70 dc =
dc = 0.8 K/W 1
1 1.0 K/W 60 0.5
40
0.5 2.0 K/W 0.4
Ptot 0.4 4.0 K/W 50 0.33
0.33 8.0 K/W IF(AV)M 0.17
30 0.17 0.08
40
[W] 0.08
[A]
20 30

20
10
10

0 0
0 10 20 30 40 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
IF(AV)M [A] Tamb [°C] TC [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus
case temperature
1.6

1.2
Constants for ZthJC calculation:
ZthJC
i Rthi (K/W) ti (s)
0.8 1 0.06 0.0004

[K/W] 2 0.2 0.00265

3 0.34 0.0045
0.4 4 0.4 0.0242
5 0.2 0.15

0.0
1 10 100 1000 10000
t [ms]
Fig. 6 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130125a

© 2013 IXYS all rights reserved