NGTB25N120FL3WG

IGBT - Ultra Field Stop

This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for UPS and solar applications. Incorporated into the device
is a soft and fast co−packaged free wheeling diode with a low forward www.onsemi.com
voltage.
Features
25 A, 1200 V
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C VCEsat = 1.7 V
• Soft Fast Reverse Recovery Diode Eoff = 0.7 mJ
• Optimized for High Speed Switching
• These are Pb−Free Devices
C

Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS) G
• Welding
E
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current IC A
@ TC = 25°C 50
@ TC = 100°C 25
G TO−247
Pulsed collector current, Tpulse limited ICM 100 A C
E CASE 340AL
by TJmax

Diode forward current IF A

@ TC = 25°C 50
@ TC = 100°C 25 MARKING DIAGRAM

Diode pulsed current, Tpulse limited IFM 100 A

by TJmax
Gate−emitter voltage VGE $20 V
Transient gate−emitter voltage ±30
(Tpulse = 5 ms, D < 0.10) 25N120FL3
AYWWG
Power Dissipation PD W
@ TC = 25°C 349
@ TC = 100°C 174
Operating junction temperature range TJ −55 to +175 °C
Storage temperature range Tstg −55 to +175 °C
Lead temperature for soldering, 1/8″ TSLD 260 °C A = Assembly Location
from case for 5 seconds Y = Year
Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week
device. If any of these limits are exceeded, device functionality should not be G = Pb−Free Package
assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION
Device Package Shipping
NGTB25N120FL3WG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

October, 2017 − Rev. 5 NGTB25N120FL3W/D
 NGTB25N120FL3WG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.43 °C/W
Thermal resistance junction−to−case, for Diode RqJC 0.78 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V
gate−emitter short−circuited
Collector−emitter saturation voltage VGE = 15 V, IC = 25 A VCEsat − 1.70 1.95 V
VGE = 15 V, IC = 25 A, TJ = 175°C − 2.20 −
Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 1200 V ICES − − 0.1 mA
emitter short−circuited VGE = 0 V, VCE = 1200 V, TJ = 175°C − 0.4 2
Gate leakage current, collector−emitter VGE = 20 V , VCE = 0 V IGES − − 200 nA
short−circuited

Input capacitance Cies − 3085 − pF

Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 94 −
Reverse transfer capacitance Cres − 52 −
Gate charge total Qg − 136 − nC
Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Qge − 29 −
Gate to collector charge Qgc − 67 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time td(on) − 15 − ns
Rise time tr − 21 −
Turn−off delay time TJ = 25°C td(off) − 109 −
VCC = 600 V, IC = 25 A
Fall time tf − 131 −
Rg = 10 W
Turn−on switching loss VGE = 15 V Eon − 1.0 − mJ
Turn−off switching loss Eoff − 0.7 −
Total switching loss Ets − 1.7 −
Turn−on delay time td(on) − 15 − ns
Rise time tr − 21 −
Turn−off delay time TJ = 150°C td(off) − 113 −
VCC = 600 V, IC = 25 A
Fall time tf − 169 −
Rg = 10 W
Turn−on switching loss VGE = 15 V Eon − 1.45 − mJ
Turn−off switching loss Eoff − 0.95 −
Total switching loss Ets − 2.4 −
DIODE CHARACTERISTICS
Forward voltage VGE = 0 V, IF = 25 A VF − 3.0 3.4 V
VGE = 0 V, IF = 25 A TJ = 175°C − 2.8 −
Reverse recovery time trr − 90 − ns
Reverse recovery charge TJ = 25°C Qrr − 0.62 − mc
Reverse recovery current IF = 25 A, VR = 600 V Irrm − 12 − A
diF/dt = 500 A/ms
Diode peak rate of fall of reverse recovery dIrrm/dt − −256 − A/ms
current during tb

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
DIODE CHARACTERISTICS
Reverse recovery time trr − 114 − ns
Reverse recovery charge TJ = 125°C Qrr − 1.17 − mc
Reverse recovery current IF = 25 A, VR = 600 V Irrm − 17 − A
diF/dt = 500 A/ms
Diode peak rate of fall of reverse recovery dIrrm/dt − −296 − A/ms
current during tb
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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TYPICAL CHARACTERISTICS

100 100
TJ = 25°C VGE = 20 V − 13 V VGE = 20 V − 13 V
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

80 80
11 V TJ = 150°C 11 V
60 60

10 V
40 10 V 40

9V
20 20
9V 8V
7V 8V 7V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

100 100
VGE = TJ = −55°C VGE = 20 V − 13 V
IC, COLLECTOR CURRENT (A)

20 V − 13 V IC, COLLECTOR CURRENT (A)

80 80
TJ = 175°C 11 V
11 V
60 60

10 V
40 40
10 V
9V
20 20
9V 8V
7 V and 8 V 7V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)

100 3.5
TJ = 25°C
IC, COLLECTOR CURRENT (A)

TJ = 175°C
80 3.0 IC = 50 A

60 2.5

IC = 25 A
40 2.0

IC = 10 A
20 1.5

0 1.0
0 2 4 6 8 10 12 14 16 −75 −50 −25 0 25 50 75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ

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TYPICAL CHARACTERISTICS

10,000 100

Cies 90

IF, FORWARD CURRENT (A)

80
CAPACITANCE (pF)

70
1000 TJ = 25°C
60
50
40
100 Coes 30
20 TJ = 175°C
Cres
10 TJ = 25°C
10 0
0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics

16 1.7
VGE, GATE−EMITTER VOLTAGE (V)

VCE = 600 V
14 1.5 VGE = 15 V
IC = 25 A Eon
SWITCHING LOSS (mJ)

12 Rg = 10 W
1.3
10
1.1
8
Eoff
0.9
6

VCE = 600 V 0.7

4
VGE = 15 V
2 IC = 25 A 0.5

0 0.3
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200
QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature

1000 6
VCE = 600 V
Eon
VGE = 15 V
5
TJ = 175°C
SWITCHING LOSS (mJ)

tf
SWITCHING TIME (ns)

Rg = 10 W
100 td(off) 4
Eoff
tr 3

td(on)
10 2
VCE = 600 V
VGE = 15 V
IC = 25 A 1
Rg = 10 W
1 0
0 20 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC

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TYPICAL CHARACTERISTICS

1000 6
VCE = 600 V
VGE = 15 V
tf 5 TJ = 175°C Eon

SWITCHING LOSS (mJ)

SWITCHING TIME (ns)

IC = 25 A
100 td(off) 4

tr
3
td(on)
10 2
VCE = 600 V
VGE = 15 V Eoff
TJ = 175°C 1
Rg = 10 W
1 0
10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70
IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG

1000 2.5
VCE = 600 V VGE = 15 V
VGE = 15 V TJ = 175°C
TJ = 175°C 2.0 Eon
SWITCHING LOSS (mJ)

IC = 25 A
SWITCHING TIME (ns)

td(off)
IC = 25 A Rg = 10 W
tf
1.5
tr
100 Eoff
td(on)
1.0

0.5

10 0
0 10 20 30 40 50 60 70 350 400 450 500 550 600 650 700 750 800
RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE

1000 1000
VGE = 15 V
TJ = 175°C
IC, COLLECTOR CURRENT (A)

IC = 25 A
SWITCHING TIME (ns)

Rg = 10 W 100
tf
td(off) dc operation
100 10
50 ms
Single Nonrepetitive 100 ms
1 Pulse TC = 25°C
tr Curves must be derated 1 ms
td(on) linearly with increase
in temperature
10 0.1
350 400 450 500 550 600 650 700 750 800 1 10 100 1K 10K
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area

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TYPICAL CHARACTERISTICS

1000 300

trr, REVERSE RECOVERY TIME (ns)

VR = 400 V
IC, COLLECTOR CURRENT (A)

250
TJ = 175°C, IF = 25 A
100 200

150

10 100
TJ = 25°C, IF = 25 A
50
VGE = 15 V, TC = 175°C
1 0
1 10 100 1K 10K 100 300 500 700 900 1100
VCE, COLLECTOR−EMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt
Qrr, REVERSE RECOVERY CHARGE (mC)

Irm, REVERSE RECOVERY CURRENT (A)

2.5 50
VR = 400 V
TJ = 175°C, IF = 25 A
2.0 40
TJ = 175°C, IF = 25 A
1.5 30

1.0 20
TJ = 25°C, IF = 25 A
TJ = 25°C, IF = 25 A
0.5 10

VR = 400 V
0 0
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt

4.5

4.0 IC = 50 A
VF, FORWARD VOLTAGE (V)

3.5

3.0 IC = 25 A

2.5
IC = 10 A
2.0

1.5

1.0
−75 −50 −25 0 25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ

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TYPICAL CHARACTERISTICS

120
Ramp, TC = 110°C

100
Ramp, TC = 80°C

80 Square, TC = 110°C
Ipk (A)

60
Square, TC = 80°C
40
VCE = 600 V,
20 RG = 10 W,
VGE = 15 V
0
0.01 0.1 1 10 100 1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency

1
RqJC = 0.43
R(t), SQUARE−WAVE PEAK (°C/W)

50% Duty Cycle

0.1 20%
10%
5% Ri (°C/W) Ci (J/W)
2% Junction R1 R2 Rn Case 0.0096 0.0105
0.01 0.1168 0.0027
0.0275 0.0363
0.1537 0.0206
0.1167 0.0857
0.001 C1 C2 Cn 0.0095 3.3131

Duty Factor = t1/t2

Single Pulse Peak TJ = PDM x ZqJC + TC
0.0001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
Figure 25. IGBT Transient Thermal Impedance
1
R(t), SQUARE−WAVE PEAK (°C/W)

50% Duty Cycle

RqJC = 0.78 Ri (°C/W) Ci (J/W)
0.017265 0.000058
20% 0.023397 0.000427
0.025095 0.001260
0.073345 0.001363
10% Junction R1 R2 Rn Case 0.093146 0.003395
0.1
0.043705 0.022881
5%
0.060153 0.052571
2% 0.127694 0.078312
0.246682 0.128193
C1 C2 Cn 0.070293 1.422617

Duty Factor = t1/t2

Single Pulse Peak TJ = PDM x ZqJC + TC
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1
PULSE TIME (sec)
Figure 26. Diode Transient Thermal Impedance

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Figure 27. Test Circuit for Switching Characteristics

Figure 28. Definition of Turn On Waveform

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Figure 29. Definition of Turn Off Waveform

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PACKAGE DIMENSIONS

TO−247
CASE 340AL
ISSUE B

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
SEATING 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
NOTE 4 A B PLANE
0.635 M B A M
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
E P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
A DIMENSIONS ARE MEASURED AT THE OUTERMOST
E2/2 EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
Q S L1.
E2 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
NOTE 3 BY L1.
4
MILLIMETERS
1 2 3 DIM MIN MAX
A 4.70 5.30
L1 A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
L NOTE 5 b4 2.60 3.40
c 0.40 0.80
D 20.80 21.34
E 15.50 16.25
E2 4.32 5.49
2X b2 c e 5.45 BSC
L 19.80 20.80
b4 A1 L1 3.81 4.32
3X b NOTE 7 P 3.55 3.65
0.25 M B A M Q 5.40 6.20
e S 6.15 BSC

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