IMPATT diode operation

Once the carriers have been generated the device relies on negative resistance to generate and sustain an
oscillation. The effect does not occur in the device at DC, but instead, here it is an AC effect that is brought about by
phase differences that are seen at the frequency of operation. When an AC signal is applied the current peaks are
found to be 180° out of phase with the voltage. This results from two delays which occur in the device: injection delay,
and a transit time delay as the current carriers migrate or drift across the device.

IMPATT diode voltage & current waveforms

The voltage applied to the IMPATT diode has a mean value where it is on the verge of avalanche breakdown. The
voltage varies as a sine wave, but the generation of carriers does not occur in unison with the voltage variations. It
might be expected that it would occur at the peak voltage. This arises because the generation of carriers is not only a
function of the electric field but also the number of carriers already in existence.

As the electric field increases so does the number of carriers. Then even after the field has reached its peak the
number of carriers still continues to grow as a result of the number of carriers already in existence. This continues
until the field falls to below a critical value when the number of carriers starts to fall. As a result of this effect there is a
phase lag so that the current is about 90° behind the voltage. This is known as the injection phase delay.

When the electrons move across the N+ region an external current is seen, and this occurs in peaks, resulting in a
repetitive waveform.

IMPATT diode circuits

IMPATT diodes are generally used at frequencies above about 3 GHz or more. It is found that when a tuned circuit is
applied along with a voltage around the breakdown voltage to the IMPATT, and oscillation will occur.

Compared to other devices that use negative resistance and are available for operation at these frequencies, the
IMPATT is able to produce much higher levels of power. Typically figures of ten or more watts may be obtained,
dependent upon the device.

Gunn Diode: microwave diode tutorial

The Gunn diode forms an easy method of

generating microwave signals using a single diode
element.

Gunn Diode Tutorial Includes:

Gunn diode
Other diodes: Diode types

Gunn diodes have been available for many years and they form a very effective method of
generating microwave signals anywhere from around 1 GHz up to frequencies of possibly 100 GHz.
Gunn diodes are also known as transferred electron devices, TED. Although is referred to as a
diode, the devices does not possess a PN junction. Instead the device uses an effect known as the
Gunn effect (named after the discoverer, J B Gunn).

Although the Gunn diode is normally used for generating microwave RF signals, the Gunn diode
may also be used for an amplifier in what may be known as a transferred electron amplifier or TEA.

As Gunn diodes are easy to use, they form a relatively low cost method for generating microwave
RF signals, often being mounted within a waveguide to form a simple resonant cavity.

Gunn diode symbol

There is a variety of Gunn diode symbols that may be seen used within circuit diagrams. Possibly
the most widely used Gunn diode symbol uses two filled in triangles with points touching is used as
shown below.

Gunn diode symbol

Gunn diode basics

The Gunn diode is a unique component - even though it is called a diode, it does not contain a PN
diode junction. The Gunn diode or transferred electron device can be termed a diode because it has
two electrodes.

The Gunn diode operation depends on the fact that it has a voltage controlled negative resistance –
this being dependent upon the fact that when a voltage is placed across the device, most of the
voltage appears across the inner active region. This inner region is particularly thin and this means
that the voltage gradient that exists in this region is exceedingly high.

The device exhibits a negative resistance region on its V/I curve as seen below. This negative
resistance area enables the Gunn diode to amplify signals, enabling it to be used in amplifiers and
oscillators. However it is the Gunn diode oscillators are the most commonly used.

Gunn diode characteristic

This negative resistance region means that the current flow in diode increases in the negative
resistance region when the voltage falls - the inverse of the normal effect in any other positive
resistance element. This phase reversal enables the Gunn diode to act as an amplifier and as an
oscillator.

The Schottky diode (named after the German physicist Walter H. Schottky), also known
as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of
a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early
power applications can be considered primitive Schottky diodes.
When sufficient forward voltage is applied, a current flows in the forward direction. A silicon
diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450
mV. This lower forward voltage requirement allows higher switching speeds and better system
efficiency.

The PIN-diode is an alteration of the PN-junction for particular applications. After the PN-
junction diode was developed in the year 1940s, the diode was first exercised as a high-
power rectifier, low-frequency during the year 1952. The occurrence of an intrinsic layer
can significantly increase the breakdown voltage for the application of high-voltage. This
intrinsic layer also offers exciting properties when the device operates at high
frequencies in the range of radio wave and microwave. A PIN diode is a one kind of
diode with an undoped, wide intrinsic semiconductor region between a P-type and N-
type semiconductor region. These regions are normally heavily doped as they are used
for Ohmic contacts.The wider intrinsic region is indifference to an ordinary p–n diode.
This region makes the diode an inferior rectifier but it makes it appropriate for fast
switches,attenuators, photo detectors and high voltage power electronics applications.

Outline of PIN Diode Chip

What is a PIN Diode?

The PIN diode is a one type of photo detector, used to convert optical signal into an
electrical signal. The PIN diode comprises of three regions, namely P-region, I-region
and N-region. Typically, both the P and N regions are heavily doped due to they are
utilized for Ohmic contacts.The intrinsic region in the diode is in contrast to a PN
junction diode. This region makes the PIN diode an lower rectifier, but it makes it
appropriate for fast switches, attenuators, photo detectors and applications of high voltage
power electronics.
 PIN Diode

Structure and Working of PIN Diode

The term PIN diode gets its name from the fact that includes three main layers. Rather
than just having a P-type and an N-type layer, it has three layers such as

 P-type layer
 Intrinsic layer
 N-type layer
The working principle of the PIN diode exactly same as a normal diode. The main
difference is that the depletion region, because that normally exists between both the P
& N regions in a reverse biased or unbiased diode is larger. In any PN junction diode,
the P region contains holes as it has been doped to make sure that it has a majority of
holes. Likewise the N-region has been doped to hold excess electrons.