MJH11017 D PDF

MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)
Complementary Darlington
Silicon Power Transistors www.onsemi.com
These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON
low frequency switching and motor control applications.
COMPLEMENTARY SILICON
Features POWER TRANSISTORS
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) 150−250 VOLTS, 150 WATTS
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
NPN PNP
= 200 Vdc (Min) — MJH11020, 19
COLLECTOR 2 COLLECTOR 2
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A BASE BASE
1 1
= 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• These are Pb−Free Devices EMITTER 3 EMITTER 3
MJH11018 MJH11017
MJH11020 MJH11019
MAXIMUM RATINGS MJH11022 MJH11021
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO Vdc
MJH11018, MJH11017 150
MJH11020, MJH11019 200
MJH11022, MJH11021 250 SOT−93
(TO−218)
Collector−Base Voltage VCB Vdc CASE 340D
MJH11018, MJH11017 150
STYLE 1
MJH11020, MJH11019 200
MJH11022, MJH11021 250 1
2
Emitter−Base Voltage VEB 5.0 Vdc 3
Collector Current − Continuous IC 15 Adc
− Peak (Note 1) 30 TO−247
CASE 340L
Base Current IB 0.5 Adc
STYLE 3
Total Device Dissipation @ TC = 25_C PD 150 W
Derate above 25_C 1.2 W/_C
Operating and Storage Junction Temperature TJ, Tstg –65 to _C
Range +150
NOTE: Effective June 2012 this device will
THERMAL CHARACTERISTICS be available only in the TO−247
Characteristic Symbol Max Unit package. Reference FPCN# 16827.
Thermal Resistance, Junction−to−Case RqJC 0.83 _C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

August, 2016 − Rev. 10 MJH11017/D
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
MARKING DIAGRAMS
TO−247 TO−218
MJH110xx
AYWWG AYWWG
MJH110xx
1 BASE 3 EMITTER
1 BASE 3 EMITTER
2 COLLECTOR
2 COLLECTOR
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
ORDERING INFORMATION
Device Order Number Package Type Shipping
MJH11017G TO−218 30 Units / Rail
(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)
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2
160
140
PD, POWER DISSIPATION (WATTS)

120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc
(IC = 0.1 Adc, IB = 0) MJH11017, MJH11018 150 −
MJH11019, MJH11020 200 −
MJH11021, MJH11022 250 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎ
(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018
ICEO
− 1.0
mAdc
(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020 − 1.0
(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022 − 1.0
Collector Cutoff Current ICEV mAdc
(VCE = Rated VCB, VBE(off) = 1.5 Vdc) − 0.5
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) − 5.0
Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0) IEBO − 2.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −
(IC = 10 Adc, VCE = 5.0 Vdc) 400 15,000
(IC = 15 Adc, VCE = 5.0 Vdc) 100 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 Adc, IB = 100 mA) − 2.5
(IC = 15 Adc, IB = 150 mA) − 4.0
Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc) VBE(on) − 2.8 Vdc
Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) − 3.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) fT 3.0 − −
Output Capacitance MJH11018, MJH11020, MJH11022 Cob − 400 pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021 − 600
Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 75 − −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ Typical
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol NPN PNP Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ td 150 75 ns
Rise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCC = 100 V, IC = 10 A, IB = 100 mA tr 1.2 0.5 ms
Storage Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VBE(off) = 5.0 V) (See Figure 2) ts 4.4 2.7 ms
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
tf 2.5 2.5 ms
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3
VCC
-100 V
RC SCOPE
TUT
RB & RC varied to obtain desired current levels V2 RB
D1, must be fast recovery types, e.g.: APPROX
1N5825 used above IB ≈ 100 mA +12 V
MSD6100 used below IB ≈ 100 mA 0 51 D1
V1
APPROX
+4.0 V
-8.0 V 25 ms
For td and tr, D1 is disconnected
and V2 = 0
tr, tf ≤ 10 ns
Duty Cycle = 1.0% For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
1.0
0.7 D = 0.5
r(t), EFFECTIVE TRANSIENT THERMAL
0.5
RESISTANCE (NORMALIZED)
0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RqJC(t) = r(t) RqJC
0.07 RqJC = 0.83°C/W MAX
0.02 D CURVES APPLY FOR POWER
0.05
PULSE TRAIN SHOWN t1
0.03 0.01 READ TIME AT t1 t2
0.02 SINGLE PULSE TJ(pk) - TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 3. Thermal Response
FORWARD BIAS
TC = 25°C SINGLE PULSE
IC, COLLECTOR CURRENT (AMPS)
There are two limitations on the power handling ability of

30 0.1 ms
20 a transistor: average junction temperature and second
10 0.5 ms
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
5.0 1.0 ms
operation; i.e., the transistor must not be subjected to greater
5.0 ms dissipation than the curves indicate.
2.0 dc
WIRE BOND LIMIT The data of Figure 4 is based on TJ(pk) = 150_C; TC is
1.0 THERMAL LIMIT variable depending on conditions. Second breakdown pulse
0.5 SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
limits are valid for duty cycles to 10% provided TJ(pk)
0.2 MJH11019, MJH11020 v 150_C. TJ(pk) may be calculated from the data in
MJH11021, MJH11022 Figure 3. At high case temperatures, thermal limitations will
0
2.0 3.0 5.0 10 20 30 50 100 150 250 reduce the power that can be handled to values less than the
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) limitations imposed by second breakdown.
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
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4
REVERSE BIAS
30
For inductive loads, high voltage and high current must be
IC, COLLECTOR CURRENT (AMPS)
L = 200 mH sustained simultaneously during turn−off, in most cases,

IC/IB1 ≥ 50 with the base to emitter junction reverse biased. Under these
TC = 100°C conditions the collector voltage must be held to a safe level
20
VBE(off) = 0-5.0 V
at or below a specific value of collector current. This can be
RBE = 47 W
DUTY CYCLE = 10% accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
10 devices is specified as Reverse Bias Safe Operating Area
MJH11017, MJH11018 and represents the voltage−current conditions during
MJH11019, MJH11020 reverse biased turn−off. This rating is verified under
MJH11021, MJH11022
clamped conditions so that the device is never subjected to
0 an avalanche mode. Figure 5 gives RBSOA characteristics.
0 20 60 100 140 180 220 260
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)
PNP NPN
10,000 10,000
7000
VCE = 5.0 V VCE = 5.0 V
5000 5000
TC = 150°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
3000
2000 TC = 150°C 2000
1000 25°C 1000 25°C
500 500
-55°C
200 -55°C 200
100 100
0.2 0.3 0.5 0.7 1.0 3.0 5.0 10 15 0.2 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 15
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain
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5
PNP NPN
4.5 4.5
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

4.0 TJ = 25°C TJ = 25°C
4.0
3.5 3.5
3.0 3.0
IC = 15 A
2.5 2.5
IC = 15 A
2.0 2.0
IC = 10 A
1.5 IC = 10 A
1.5
IC = 5.0 A IC = 5.0 A
1.0 1.0
1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP NPN
4.0 4.0
3.5 TJ = 25°C 3.5 TJ = 25°C
3.0 3.0
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
2.5 2.5
2.0 VBE(sat) @ IC/IB = 100 2.0 VBE(sat) @ IC/IB = 100
1.5 1.5
VBE @ VCE = 5.0 V VBE @ VCE = 5.0 V
1.0 1.0
VCE(sat) @ IC/IB = 100 VCE(sat) @ IC/IB = 100
0.5 0.5
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.5 0.7 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
PNP NPN
MJH11017 COLLECTOR MJH11018 COLLECTOR

MJH11019 MJH11020
MJH11021 MJH11022
BASE BASE
EMITTER EMITTER
Figure 9. Darlington Schematic
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6
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ANSI
B Q E Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
U 4 A --- 20.35 --- 0.801
A B 14.70 15.20 0.579 0.598
S L C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
E 1.17 1.37 0.046 0.054
1 2 3
K G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
J V 1.75 REF 0.069
D
H STYLE 1:
PIN 1. BASE
V 2. COLLECTOR
G 3. EMITTER
4. COLLECTOR
TO−247
CASE 340L−02
ISSUE F
−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
U L A 20.32 21.08 0.800 8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J
STYLE 3:
F 2 PL H PIN 1. BASE
G 2. COLLECTOR
D 3 PL 3. EMITTER
4. COLLECTOR
0.25 (0.010) M Y Q S
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7
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MJH11017, MJH11019,

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

MJH11018G TO−218 30 Units / Rail

MJH11019G TO−218 30 Units / Rail

MJH11020G TO−218 30 Units / Rail

MJH11021G TO−218 30 Units / Rail

MJH11022G TO−218 30 Units / Rail

MJH11017G TO−247 30 Units / Rail

MJH11018G TO−247 30 Units / Rail

MJH11019G TO−247 30 Units / Rail

MJH11020G TO−247 30 Units / Rail

MJH11021G TO−247 30 Units / Rail

MJH11022G TO−247 30 Units / Rail

PD, POWER DISSIPATION (WATTS)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol NPN PNP Unit

Figure 2. Switching Times Test Circuit

Figure 3. Thermal Response

There are two limitations on the power handling ability of

L = 200 mH sustained simultaneously during turn−off, in most cases,

Figure 5. Maximum Rated Reverse Bias

hFE , DC CURRENT GAIN

1000 25°C 1000 25°C

Figure 6. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Saturation Region

3.5 TJ = 25°C 3.5 TJ = 25°C

2.0 VBE(sat) @ IC/IB = 100 2.0 VBE(sat) @ IC/IB = 100

Figure 8. “On” Voltages

MJH11017 COLLECTOR MJH11018 COLLECTOR

Figure 9. Darlington Schematic

PUBLICATION ORDERING INFORMATION

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