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IRFB7540PbF
IRFS7540PbF
IRFSL7540PbF
Application HEXFET® Power MOSFET
Brushed Motor drive applications
VDSS 60V
BLDC Motor drive applications D
Benefits S S S
D
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G G G
D
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability TO-220AB D2Pak TO-262
IRFB7540PbF IRFS7540PbF IRFSL7540PbF
Lead-Free, RoHS Compliant
G D S
Gate Drain Source
Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
IRFB7540PbF TO-220 Tube 50 IRFB7540PbF
IRFSL7540PbF TO-262 Tube 50 IRFSL7540PbF
Tube 50 IRFS7540PbF
IRFS7540PbF D2-Pak
Tape and Reel Left 800 IRFS7540TRLPbF
14 120
RDS(on), Drain-to -Source On Resistance (m )
ID = 65A
12 100
ID, Drain Current (A)
10 80
T J = 125°C
8 60
6 40
4 20
T J = 25°C
2 0
4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 65A, VGS =10V.
ISD 65A, di/dt 1130A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 25A, VGS =10V.
10
4.5V
10
4.5V
1
100
TJ = 175°C 1.6
(Normalized)
10
TJ = 25°C 1.2
1
0.8
V DS = 25V
60µs PULSE WIDTH
0.1 0.4
2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100120140160180
V GS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Ciss 8.0
6.0
Coss
1000
Crss 4.0
2.0
100 0.0
1 10 100 0 20 40 60 80 100 120
V DS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
100µsec
1msec
100
100 TJ = 175°C
OPERATION
10 IN THIS
AREA
LIMITED BY
TJ = 25°C R DS(on)
10
1
10msec
Tc = 25°C
Tj = 175°C DC
V GS = 0V
Single Pulse
1.0 0.1
0.2 0.6 1.0 1.4 1.8 0.1 1 10
V SD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
78 0.8
Id = 1.0mA
0.7
76
0.6
74
Energy (µJ) 0.5
72 0.4
0.3
70
0.2
68
0.1
66 0.0
-60 -40 -20 0 20 40 60 80 100120140160180 0 10 20 30 40 50 60
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy
14
RDS(on), Drain-to -Source On Resistance ( m)
12
Vgs = 5.5V
Vgs = 6.0V
10 Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
8
2
0 40 80 120 160 200
0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
10
0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
200
TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16:
BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)
ID = 65A 1.Avalanche failures assumption:
EAR , Avalanche Energy (mJ)
10 V R = 51V
TJ = 25°C
3.0
TJ = 125°C
8
2.5
IRRM (A)
ID = 100µA 6
2.0 ID = 250µA
ID = 1.0mA 4
1.5
ID = 1.0A
1.0 2
0.5 0
-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000
TJ , Temperature ( °C ) diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt
12 200
IF = 65A IF = 43A
V R = 51V V R = 51V
10
TJ = 25°C TJ = 25°C
150
TJ = 125°C TJ = 125°C
8
QRR (nC)
IRRM (A)
6 100
4
50
2
0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
diF /dt (A/µs) diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt
200
IF = 65A
V R = 51V
TJ = 25°C
150
TJ = 125°C
QRR (nC)
100
50
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
20V
tp 0.01 I AS
Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform
EXAM PLE: T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789 IN T E R N A T IO N A L PART NUM BER
ASSEM BLED O N W W 19, 2000 R E C T IF IE R
IN T H E A S S E M B L Y L IN E "C " LO G O
D ATE C O D E
YEA R 0 = 2000
N o t e : "P " in a s s e m b ly lin e p o s it io n ASSEM BLY
in d ic a t e s "L e a d - F r e e " LO T C O D E W EEK 19
L IN E C
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DESIGNATES LEAD-FREE
ASSEMBLY
LOT CODE PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASSEMBLYSITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
OR
PART NUMBER
INTERNATIONAL
RECTIFIER F530S
LOGO DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
ASSEMBLY
YEAR 0 = 2000
LOT CODE
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification Level (per JEDEC JESD47F) ††
Revision History
Date Comments
Updated EAS (L =1mH) = 313mJ on page 2
11/6/2014 Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 25A, VGS =10V”. on page 2
Updated package outline on page 9,10,11.