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2SC3365

Silicon NPN Triple Diffused

Application

High voltage, high speed and high power switching

Outline

TO-3P

1. Base
2. Collector
(Flange)
3. Emitter

1
2
3
2SC3365

Absolute Maximum Ratings (Ta = 25°C)


Item Symbol Ratings Unit
Collector to base voltage VCBO 500 V
Collector to emitter voltage VCEO 400 V
Emitter to base voltage VEBO 10 V
Collector current IC 10 A
Collector peak current I C(peak) 20 A
Base current IB 5 A
1
Collector power dissipation PC * 80 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)


Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain VCEO(sus) 400 — — V I C = 0.2 A, RBE = ∞, L = 100 mH
voltage VCEX(sus) 400 — — V I C = 10 A, IB1 = 2 A, IB2 = –0.6 A,
VBE = –5.0 V, L = 180 µH,
Clamped
Emitter to base breakdown V(BR)EBO 10 — — V I E = 10 mA, IC = 0
voltage
Collector cutoff current I CBO — — 50 µA VCB = 400 V, IE = 0
I CEO — — 50 µA VCE = 350 V, RBE = ∞
DC current transfer ratio hFE1 12 — — VCE = 5.0 V, IC = 5 A*1
hFE2 5 — — VCE = 5.0 V, IC = 10 A*1
Collector to emitter saturation VCE(sat) — — 1.0 V I C = 5 A, IB = 1 A*1
voltage
Base to emitter saturation VBE(sat) — — 1.5 V
voltage
Turn on time t on — — 1.0 µs I C = 10 A, IB1 = –IB2 = 2 A,
Storage time t stg — — 2.5 µs VCC ≅ 150 V
Fall time tf — — 1.0 µs
Note: 1. Pulse test

2
2SC3365

Maximum Collector Dissipation Curve Area of Safe Operation


120 100
Collector power dissipation Pc (W)

30 iC (peak)

25 µs
Collector Current IC (A)

50 s
25 ms

µs
10
IC (max)


1
80
3 (Continuous)

PW
DC

=
10
1.0

Op

ms
era
0.3

tio
40

n(
TC
0.1

=2

0.03

C)
Ta = 25°C, 1 Shot Pulse
0.01
0 50 100 150 1 3 10 30 100 300 1,000
Case Temperature TC (°C) Collector to emitter Voltage VCE (V)

Transient Thermal Resistance


10
Collector Current Derating Rate
Thermal resistance θj-c (°C/W)

100 3
Collector Current derating rate (%)

IS 10 ms–10 s
80 /B 1.0
Lim
it A
re 0.3
60 a
ms
s– 10
0.1
10µ
40
0.03
TC = 25°C
20
0.01
0.01 0.1 1.0 10 (s)

0 50 100 150 0.01 0.1 1.0 10 (ms)


Case temperature TC (°C) Time t

3
2SC3365

Collector to Emitter Voltage


Reverse Bias Area of Safe Operation vs. Base to Emitter Resistance

Collector to emitter voltage V (BR)CER (V)


20 600
300 V, 20 A
IC = 1 mA
16
Collector Current IC (A)

500
12

400 V, 10 A
8
IB2 = –0.6 A 400

4
450 V, 2 A

300
0 100 200 300 400 500 100 1k 10 k 100 k 1M
Collector to emitter Voltage VCE (V) Base to emitter resistance RBE (Ω)

Typical Transfer Characteristics Typical Output Characteristics


10 10
6 1.4 1.2
1. TC = 25°C
1.0 VCE = 5 V
8 8
Collector Current IC (A)

Collector Current IC (A)

0.8
0.6
6 0.5 6
0.4
0.3
4 0.2 4

0.1
2 2
0.05 A
IB = 0 TC = 25°C
0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0
Collector to emitter Voltage VCE (V) Base to emitter voltage VBE (V)

4
2SC3365

DC Current Transfer Ratio vs. Collector to Emitter Saturation


Collector Current Voltage vs. Base Current
100 10

Collector to emitter saturation voltage


IC = 10 A
1 2 5
DC current transfer ratio hFE

3
30 75
25 1.0

VCE (sat) (V)


–25 °C
TC =
10 0.3

0.1
3
VCE = 5 V
0.03
TC = 25°C
1 0.01
0.01 0.03 0.1 0.3 1.0 3 10 0.01 0.03 0.1 0.3 1.0 3 10
Collector current IC (A) Base current IB (A)

Saturation Voltage vs. Collector Current Switching Time vs. Collector Current
10 10
Collector to emitter saturation voltage

TC = 25°C
Base to emitter saturation voltage

lC = 5 lB tstg
3 3
Switching time t (µs)

1.0 VBE (sat) 1.0


VCE (sat) (V)

VBE (sat) (V)

tf
0.3 0.3
ton
0.1 VCE (sat) 0.1

0.03 0.03 IC = 5 IB1 = –5 IB2


VCC =~ 150 V
0.01 0.01
0.01 0.03 0.1 0.3 1.0 3 10 0.01 0.03 0.1 0.3 1.0 3 10
Collector current IC (A) Collector current IC (A)

5
2SC3365

Switching Time vs. Case Temperature


5

2
tstg

Switching time t (µs)


1.0
tf
0.5 ton

0.2
IC = 10 A
0.1 IB1 = –IB2 = 2 A
VCC =~ 150 V
0.05
0 25 50 75 100 125
Case temperature TC (°C)

6
Unit: mm

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0
1.6

1.4 Max 2.0


2.8
18.0 ± 0.5

1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5


Hitachi Code TO-3P
JEDEC —
EIAJ Conforms
Weight (reference value) 5.0 g
Cautions

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.

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