EC301PC : ELECTRONIC DEVICES AND CIRCUITS

B.Tech. ECE. II Year I Sem.

2 – Mid Examinations – Theory & Quiz Questions

Mr.V.Karthik Kumar

 Explain the principle of operation of tunnel diode with its characteristics.

 Discuss the low frequency response of BJT amplifier and the effect of bypass
capacitors.
 Draw the FET small signal model. Discuss the analysis of CD JFET amplifier.
 With the help of a neat diagram explain the operation of an n-channel enhancement type
MOSFET. Differentiate between MOSFET and JFET.
 Define varactor diode? Explain the operation of varactor diode with its equivalent circuit
and mention its applications.
 Draw the h-parameter equivalent circuit for a typical common emitter amplifier and
derive expression for Ai, AV, Ri and RO.
 Draw the FET small signal model. Derive expression for Ri, Av and Ro for CS JFET
amplifier.
 Describe the construction and working principle of depletion mode MOSFET and draw
its characteristics. Compare D-MOSFET and E-MOSFET .
 How is zener diode used as a voltage regulator? Compare Zener Diode and Tunnel
diode.
 Draw the h-parameter model of a CB amplifier and derive the expressions for its voltage
gain, current gain, input impedance and output impedance.
 Explain the different biasing techniques of JFET.
 Explain the working principle of depletion mode MOSFET and draw its characteristics
 When a reverse gate voltage of 12V is applied to JFET the gate current is 1nA, determine
the resistance between gate and source.
 When the reverse gate voltage of JFET changes from 4 to 3.9V, the drain current changes
from 1.3 to 1.6mA. find the transconductance.
  A FET has a driven current of 4mA, if I DSS=8mA, VGS(off)=-6V. find the values of VGS and
Vp.
 An n-channel JFET has IDSS=8mA, Vp=-5V. Determine the minimum value of VDS for
pinch-off region and the drain current IDS for VGS=-2V.
 For an n-channel Si FET with a=3X10 -6 m, ND=1021e-s/m2 find pinch-off voltage and channel
half-width for VGS=Vp/2 , εr =12 and ID=0.
 The max transconductance of FET is 10mA/V, drain current when VGS=0 is 20mA. Find
pinch-off voltage of FET.
 For JFET, if IDSS=20mA, VGS(off)=-5V, gmo=4ms, find transconductance for VGS=-4V and
find ID at this point.
 The h-parameters of a transistor used in a CE circuit are hre=10x10-4, hfe =50, hoe =100k . the
load resistance for the transistor is 1kΩ in the collector circuit .determine R i , Ro , Av and Ai
in the amplifier stage(assume Rs =1000Ω).
 Find the values of hfb and hfc , if the value of hfe of a transistor is 50
 The figure shows a CE amplifier with collector to base bias. Calculate A i, Av , Ri.the
transistor parameters are hie =1.1 kΩ, hfe =50, hce =25x10-6 A/V, hre =2.5x10-4.
 A transistor is connected in CC configuration and its h-parameters are hre =2.5x10-4, hfe
=50 , hoe =24 mA/V, the circuit uses R L=10 kΩ, and Rs =1kΩ,calculate gain Ai, Ri , Av of
this amplifier.
 A transistor used in a CC circuit as in figure has the following set of h-parameters hic =2kΩ,
hfc =-51, hrc =1, hoc =25x10-6 A/V. Find the values of input and output resistances, current
and voltage gains of the amplifier stage. Use the approximate analysis.
 A transistor used in a CB amplifier has the following values of h-parameters hib =28Ω, hfb =-
0.98, hrb =5x10-4 and hob =0.34x10-6 S. Calculate the values of Ri, R0, Ai, and Av, if the load
resistance is 1.2kΩ. Assume source resistance as zero.

UNIT - III
Q1. A JFET has three terminals, namely …………
1. cathode, anode, grid
2. emitter, base, collector
3. source, gate, drain
4. none of the above
Answer : 3
Q2. A JFET is similar in operation to …………. valve
1. diode
2. pentode
3. triode
4. tetrode
Answer : 2
Q3. A JFET is also called …………… transistor
1. unipolar
2. bipolar
3. unijunction
4. none of the above
Answer : 1
Q4. A JFET is a ………… driven device
1. current
2. voltage
3. both current and voltage
4. none of the above
Answer : 2
Q5. The gate of a JFET is ………… biased
1. reverse
2. forward
3. reverse as well as forward
4. none of the above
Answer : 1
Q6. The input impedance of a JFET is …………. that of an ordinary transistor
1. equal to
2. less than
3. more than
4. none of the above
Answer : 3
Q7. In a p-channel JFET, the charge carriers are …………..
1. electrons
2. holes
3. both electrons and holes
4. none of the above
Answer : 2
Q8. When drain voltage equals the pinch-off-voltage, then drain current …………. with the
increase in drain voltage
1. decreases
2. increases
3. remains constant
4. none of the above
Answer : 3
Q9. If the reverse bias on the gate of a JFET is increased, then width of the conducting channel
…………..
1. is decreased
2. is increased
3. remains the same
4. none of the above
Answer : 1
Q10. A MOSFET has …………… terminals
1. two
2. five
3. four
4. three
Answer : 4
Q11. A MOSFET can be operated with ……………..
1. negative gate voltage only
2. positive gate voltage only
3. positive as well as negative gate voltage
4. none of the above
Answer : 3
Q12. A JFET has ……….. power gain
1. small
2. very high
3. very small
4. none of the above
Answer : 2
Q13. The input control parameter of a JFET is ……………
1. gate voltage
2. source voltage
3. drain voltage
4. gate current
Answer : 1
Q14. A common base configuration of a pnp transistor is analogous to ………… of a JFET
1. common source configuration
2. common drain configuration
3. common gate configuration
4. none of the above
Answer : 3
Q15. A JFET has high input impedance because …………
1. it is made of semiconductor material
2. input is reverse biased
3. of impurity atoms
4. none of the above
Answer : 2
Q16. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ………
1. almost touch each other
2. have large gap
3. have moderate gap
4. none of the above
Answer : 1
Q17. In a JFET, IDSS is known as …………..
1. drain to source current
2. drain to source current with gate shorted
3. drain to source current with gate open
4. none of the above
Answer : 2
Q18. The two important advantages of a JFET are …………..
1. high input impedance and square-law property
2. inexpensive and high output impedance
3. low input impedance and high output impedance
4. none of the above
Answer : 1
Q19. …………. has the lowest noise-level
1. triode
2. ordinary trnsistor
3. tetrode
4. JFET
Answer : 4
Q20. A MOSFET is sometimes called ………. JFET
1. many gate
2. open gate
3. insulated gate
4. shorted gate
Answer : 3
Q21. Which of the following devices has the highest input impedance?
1. JFET
2. MOSFET
3. Crystal diode
4. ordinary transistor
Answer : 2
Q22. A MOSFET uses the electric field of a ………. to control the channel current
1. capacitor
2. battery
3. generator
4. none of the above
Answer : 1
Q23. The pinch-off voltage in a JFET is analogous to ………. voltage in a vacuum tube
1. anode
2. cathode
3. grid cut off
4. none of the above
Answer : 3
Q25. In class A operation, the input circuit of a JFET is ………. biased
1. forward
2. reverse
3. not
4. none of the above
Answer : 2
Q26. If the gate of a JFET is made less negative, the width of the conducting channel……….
1. remains the same
2. is decreased
3. is increased
4. none of the above
Answer : 3
Q27. The pinch-off voltage of a JFET is about ……….
1. 5 V
2. 0.6 V
3. 15 V
4. 25 V
Answer : 1
Q28. The input impedance of a MOSFET is of the order of ………..
1. Ω
2. a few hundred Ω
3. kΩ
4. several MΩ
Answer : 4
Q29. The gate voltage in a JFET at which drain current becomes zero is called ……….. voltage
1. saturation
2. pinch-off
3. active
4. cut-off
Answer : 2
Q30. A crystal diode has ………
1. one pn junction
2. two pn junctions
3. three pn junctions
4. none of the above
Answer : 1
Q31. In a FET, there are ……….. pn junctions at the sides
1. three
2. four
3. five
4. two
Answer : 4
Q32. The transconductance of a JFET ranges from ……………..
1. 100 to 500 mA/V
2. 500 to 1000 mA/V
3. 0.5 to 30 mA/V
4. above 1000 mA/V
Answer : 3
Q33. The source terminal of a JEFT corresponds to ………….. of a vacuum tube
1. plate
2. cathode
3. grid
4. none of the above
Answer : 2
Q34. The output characteristics of a JFET closely resemble the output characteristics of a ……….
valve
1. pentode
2. tetrode
3. triode
4. diode
Answer : 1
Q35. If the cross-sectional area of the channel in n-channel JEFT increases, the drain current
……….
1. is increased
2. is decreased
3. remains the same
4. none of the above
Answer : 1
Q36. The channel of a JFET is between the …………….
1. gate and drain
2. drain and source
3. gate and source
4. input and output
Answer : 2
Q37. For VGS = 0 V, the drain current becomes constant when VDS exceeds ………
1. cut off
2. VDD
3. VP
4. o V
Answer : 3
Q38. A certain JFET data sheet gives VGS(off) = -4 V. The pinch-off voltage Vp is ……..
1. +4 V
2. -4 V
3. dependent on VGS
4. data insufficient
Answer : 1
Q39. The constant-current region of a JFET lies between
1. cut off and saturation
2. cut off and pinch-off
3. o and IDSS
4. pinch-off and breakdown
Answer : 4

Q40. At cut-off, the JFET channel is ……….

Answer completely closed by the depletion region
Q41. ……………. rectifier has the lowest forward resistance
Answer solid state
Q42. A crystal diode has forward resistance of the order of ……………
Answer Ω
Q43. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased.
Answer forward
Q44. The reverse current in a diode is of the order of ……………….
 Answer μA
Q45. The forward voltage drop across a silicon diode is about …………………
Answer 0.7 V
Q46. A crystal diode is used as ……………
Answer a rectifier
Q47. The d.c. resistance of a crystal diode is ………….. its a.c. resistance
Answer less than
Q48. An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.
Answer conductor
Q49. The ratio of reverse resistance and forward resistance of a germanium crystal diode is about
………….
Answer 40,000 : 1
Q 50. The leakage current in a crystal diode is due to …………….
Answer minority carriers
Q51. If the temperature of a crystal diode increases, then leakage current ………..
Answer increases
Q52. The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode
Answer lower than
Q53. If the doping level of a crystal diode is increased, the breakdown voltage………….
Answer is decreased
Q54. The knee voltage of a crystal diode is approximately equal to ………….
Answer barrier potential
Q55. When the graph between current through and voltage across a device is a straight line, the
device is referred to as ……………….
Answer linear
Q56. When the crystal current diode current is large, the bias is …………
Answer forward
Q57. A crystal diode is a …………… device
Answer non-linear
Q58. A crystal diode utilises …………….. characteristic for rectification
Answer forward
Q59. When a crystal diode is used as a rectifier, the most important consideration is ………..
Answer PIC rating
Q60. If the doping level in a crystal diode is increased, the width of depletion layer………..
Answer in increased
Q61. A zener diode has ………..
Answer one pn junction
Q62. A zener diode is used as …………….
Answer a voltage regulator
Q63. The doping level in a zener diode is …………… that of a crystal diode
Answer more than
Q64. A zener diode is always ………… connected.
Answer reverse
Q65. A zener diode utilizes ……….. characteristics for its operation.
Answer reverse
Q66. In the breakdown region, a zener didoe behaves like a …………… source.
Answer constant voltage
67. A zener diode is destroyed if it…………..
Answer carrier more than rated current
Q68. A series resistance is connected in the zener circuit to………..
Answer protect the zener
A69. A zener diode is …………………. device
Answer a non-linear
Q70. A zener diode has ………….. breakdown voltage
Answer sharp

UNIT – IV

Q1. Hybrid means ………………

1. Mixed
2. Single
3. Unique
4. None of the above
Answer : 1
Q2. There are …………… h parameters of a transistor
1. Two
2. Four
3. Three
4. None of the above
Answer: 2
Q3. The h parameter approach gives correct results for …………
1. Large signals only
2. Small signals only
3. Both small and large signals
4. None of the above
Answer: 2
Q4. A transistor behaves as a linear device for ………….
1. Small signals only
2. Large signals only
3. Both small and large signals
4. None of the above
Answer : 1
Q5. The parameter hie stands for input impedance in ………..
1. CB arrangement with output shorted
2. CC arrangement with output shorted
3. CE arrangement with output shorted
4. None of the above
Answer : 3
Q6. The dimensions of hie parameter are ………..
1. Mho
2. Ohm
3. Farad
4. None of the above
Answer : 2
Q7. The hfe parameter is called ……………. in CE arrangement with output shorted
1. Voltage gain
2. Current gain
3. Input impedance
4. None of the above
Answer : 2
Q8. If the operating point changes, the h parameters of transistor ………..
1. Also change
2. Do not change
3. May or may not change
4. None of the above
Answer : 1
Q9. The values of h parameter of a transistor in CE arrangement are ……………… arrangement
1. The same as for CB
2. The same as for CC
3. Different from that in CB
4. None of the above
Answer : 3
Q10. In order to determine hfe and hie parameters of a transistor, ………… is an a.c. short-circuited
1. Input
2. Output
3. Input as well as output
4. None of the above
Answer : 2
Q11. If temperature changes, h parameters of a transistor ………….
1. May or may not change
2. Do not change
3. Also change
4. None of the above
Answer : 3
Q12. In CE arrangement, the value of input impedance is approximately equal to …………..
1. Hie
2. Hoe
3. Hre
4. None of the above
Answer : 1
13. The h-parameters analysis gives correct results for __________
Answer small signals only
14. For what type of signals does a transistor behaves as linear device?
Answer small signals only
15. How many h-parameters are there for a transistor?
Answer four
16. The dimensions of hie parameters are _______
Answer OHM
17. The hfe parameter is called _______ in CE arrangement with output short circuited.
Answer Current gain
18. What happens to the h parameters of a transistor when the operating point of the transistor
changes?
Answer It also changes
19. If temperature changes, h parameters of a transistor _____
Answer changes
20. In CE arrangement, the value of input impedance is approximately equal to _____
Answer H IE
21. How many h-parameters of a transistor are dimensionless? ___________________
Answer Two
22. The values of h-parameters of a transistor in CE arrangement are ________ arrangement.
Answer different from that in CB

UNIT – V
1. A MOSFET differs from a JFET mainly because ………………
1. of power rating
2. the MOSFET has two gates
3. the JFET has a pn junction
4. none of the above
Answer : 3
Q2. A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off)
= -5 V. The value of the drain current is …………
1. 20 mA
2. 0 mA
3. 40 mA
4. 10 mA
Answer : 1
Q3. A n-channel D-MOSFET with a positive VGS is operating in …………
1. the depletion-mode
2. the enhancement-mode
3. cut off
4. saturation
Answer : 2
Q4. A certain p-channel E-MOSFET has VGS(th) = -2V. If VGS= 0V, the drain current is ……….
1. 0 mA
2. ID(on)
3. maximum
4. IDSS
Answer : 1
Q5. In a common-source JFET amplifier, the output voltage is …………………
1. 180o out of phase with the input
2. in phase with the input
3. 90o out of phase with the input
4. taken at the source
Answer : 1
Q6. In a certain common-source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s.
The voltage gain is …………
1. 1
2. 11.4
3. 8.75
4. 3.2
Answer : 2
Q7. In a certain CS JFET amplifier, RD= 1kΩ , RS= 560 Ω , VDD=10V and gm= 4500 μS. If the
source resistor is completely bypassed, the voltage gain is …………
1. 450
2. 45
3. 2.52
4. 4.5
Answer : 4
Q8. A certain common-source JFET has a voltage gain of 10. If the source bypass capacitor is
removed, ……………….
1. the voltage gain will increase
2. the transconductance will increase
3. the voltage gain will decrease
4. the Q-point will shift
Answer : 3
Q9. A CS JFET amplifier has a load resistance of 10 kΩ , RD= 820Ω . If gm= 5mS and Vin= 500
mV, the output signal voltage is ………..
1. 2.05 V
2. 25 V
3. 0.5 V
4. 1.89 V
Answer : 4
Q10. If load resistance in the above question (Q.49) is removed, the output voltage will …………
1. increase
2. decrease
3. stay the same
4. be zero
Answer : 1
Q.11. When not in use, MOSFET pins are kept at the same potential through the use of …………
1. shipping foil
2. nonconductive foam
3. conductive foam
4. a wrist strap
Answer: 3
Q.12. D-MOSFETs are sometimes used in series to construct a cascode high-frequency amplifier to
overcome the loss of …………..
1. low output impedance
2. capacitive reactance
3. high input impedance
4. inductive reactance
Answer: 3
Q.13. A “U” shaped, opposite-polarity material built near a JFET-channel center is called the
……….
1. gate
2. block
3. drain
4. heat sink
Answer: 1
Q.14. When testing an n-channel D-MOSFET, resistance G to D = , resistance G to S = ,
resistance D to SS = and 500 , depending on the polarity of the ohmmeter, and resistance D to
S = 500 . What is wrong?
1. short D to S
2. open G to D
3. open D to SS
4. nothing
Answer: 4
Q.15. In the constant-current region, how will the IDS change in an n-channel JFET?
1. As VGS decreases ID decreases.
2. As VGS increases ID increases
3. As VGS decreases ID remains constant.
4. As VGS increases ID remains constant.
Answer: 1
Q.16. IDSS can be defined as ………
1. the minimum possible drain current
2. the maximum possible current with V GS held at –4 V
3. the maximum possible current with V GS held at 0 V
4. the maximum drain current with the source shorted
Answer: 3
Q.17. The input impedance of a common-gate configured JFET is …………
1. very low
2. low
3. high
4. very high
Answer: 1
Q.18. A very simple bias for a D-MOSFET is called ……..
1. self biasing
2. gate biasing
3. zero biasing
4. voltage-divider biasing
Answer: 3
Q.19. With the E-MOSFET, when gate input voltage is zero, drain current is …..
1. at saturation
2. zero
3. IDSS
4. widening the channel
Answer: 2
Q.20. With a 30-volt VDD , and an 8-kilohm drain resistor, what is the E-MOSFET Q point voltage,
with ID = 3 mA?
1. 6 V
2. 10 V
3. 24 V
4. 30 V
Answer: 1

Q.21. When an input signal reduces the channel size, the process is called …….
Answer depletion
Q.22. Which JFET configuration would connect a high-resistance signal source to a low-resistance
load ?
Answer source follower
Q.23. When VGS = 0 V, a JFET is……….
Answer saturated
Q.24. The electrons flow through a p-channel JFET from ……….. to …………..
Answer from drain to source
Q.25. When applied input voltage varies the resistance of a channel, the result is called…………..
Answer field effect
Q.26. Vertical channel E-MOSFET used for__________
Answer high currents
Q.27. When the JFET is no longer able to control the current, this point is called the …………
Answer breakdown region
Q.28. With a JFET, a ratio of output current change against an input voltage change is called as
………..
Answer transconductance
Q.29. Which type of JFET bias requires a negative supply voltage? ________________
Answer gate
Q.30. How will a D-MOSFET input impedance change with signal frequency?
_______________________________________________________
Answer As frequency decreases input impedance increases.
Q.31. The type of bias most often used with E-MOSFET circuits is………….
Answer drain-feedback
Q.32. The transconductance curve of a JFET is a graph of …………… vs ……….
Answer ID versus VGS
Q.33. The common-source JFET amplifier has ………..
Answer a very high input impedance and a relatively low voltage gain
Q.34. The overall input capacitance of a dual-gate D-MOSFET is lower because the devices are
usually connected ………..
Answer in series
Q.35. Which component is considered to be an “OFF” devic. _________________
Answer E-MOSFET
Answer: 4
Q.36. In an n-channel JFET, the value of VDS at which further increases in VDS will cause no
further increase in ________________
Answer ID