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This document summarizes the specifications and characteristics of the HK 13001 transistor from Shenzhen HUAKE Semiconductors Co., LTD. It is a high voltage, high speed NPN transistor intended for applications such as fluorescent lamps and electronic ballasts. The transistor has a maximum collector-base voltage of 500V and collector-emitter voltage of 400V. It provides DC current gains ranging from 10 to 40 and storage times between 0.5 and 2.5 microseconds.
This document summarizes the specifications and characteristics of the HK 13001 transistor from Shenzhen HUAKE Semiconductors Co., LTD. It is a high voltage, high speed NPN transistor intended for applications such as fluorescent lamps and electronic ballasts. The transistor has a maximum collector-base voltage of 500V and collector-emitter voltage of 400V. It provides DC current gains ranging from 10 to 40 and storage times between 0.5 and 2.5 microseconds.
This document summarizes the specifications and characteristics of the HK 13001 transistor from Shenzhen HUAKE Semiconductors Co., LTD. It is a high voltage, high speed NPN transistor intended for applications such as fluorescent lamps and electronic ballasts. The transistor has a maximum collector-base voltage of 500V and collector-emitter voltage of 400V. It provides DC current gains ranging from 10 to 40 and storage times between 0.5 and 2.5 microseconds.
●FEATURES: ① HIGH VOLTAGE CAPABILITY ② HIGH SPEED SWITCHING ③ WIDE SOA ●APPLICATION: ① FLUORESCENT LAMP ② ELECTRONIC BALLAST
●Absolute Maximum Ratings (Tc=25℃) TO-92 NPN
PARAMETER SYMBOL VALUE UNIT Collector–Base Voltage V CBO 500 V Collector–Emitter Voltage V CEO 400 V Emitter–Base Voltage V EBO 9 V Collector Current IC 0.3 A B C E Total Power Dissipation PC 7 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg - 65 -150 ℃
● Electronic Characteristics (Tc=25℃)
CHARACTERISTICS SYMBOL TESTCONDITION MIN MAX UNIT Collector–Base Cutoff Current ICBO V CB =500v 100 µA Collector–Emitter Cutoff Current ICEO V CE =400v 250 µA Collector–Emitter Voltage V CEO IC =10mA I B =0 400 V Emitter–Base Voltage V EBO IE =1mA I C =0 9 V Collector–Emitter Saturation Vcesat IC =0.05A I B = 0.01A 0.4 V Voltage IC =200m A IB =50m A 0.8 V Base–Emitter Saturation Voltage Vbesat IC =50m A I B =10m A 1.1 V V CE =5v IC =1mA 7 DC Current Gain HFE V CE =20v IC =20m A 10 40 V CE =5v I C =250m A 5 Storage Time Ts V CC =5V 0.5 2.5 µS Falling Time Tf IC =0.1A 0.8 µS
This Datasheet Is Presented by The Manufacturer Dieses Datenblatt Wird Vom Hersteller Bereitgestellt Cette Fiche Technique Est Présentée Par Le Fabricant