POWER ELECTRONICS

1. A half-controlled single-phase bridge rectifier is supplying an R-L load. It is operated

at a firing angle α and the load current is continuous. The fraction of cycle that the
freewheeling diode conducts is

(A) ½ (B) (1 − α/π) (C) α/2π (D) α/π

2. The typical ratio of latching current to holding current in a 20 A thyristor is

(A) 5.0 (B) 2.0 (C) 1.0 (D) 0.5

3. In the circuit shown, an ideal switch S is operated at 100 kHz with a duty
ratio of 50%. Given that Δic is 1.6 A peak-to-peak and I0 is 5 A dc, the peak
current in S , is

(A) 6.6 A (B) 5.0 A (C) 5.8 A (D) 4.2 A

In the 3-phase inverter circuit shown, the load is balanced and the gating scheme is
180c conduction mode. All the switching devices are ideal.

4. The rms value of load phase voltage is

(A) 106.1V (B) 141.4 V (C) 212.2 V (D) 282.8 V

5. If the dc bus voltage Vd = 300 V, the power consumed by 3-phase load is

(A) 1.5 kW (B) 2.0 kW (C) 2.5 kW (D) 3.0 kW

6. A three phase current source inverter used for the speed control of an
induction motor is to be realized using MOSFET switches as shown below.
Switches S1 to S6 are identical switches.

The proper configuration for realizing switches S1 to S6 is

7. Circuit turn-off time of an SCR is defined as the time

(A) taken by the SCR turn to be off

(B) required for the SCR current to become zero
(C) for which the SCR is reverse biased by the commutation circuit
(D) for which the SCR is reverse biased to reduce its current below the
holding current

8. A voltage commutated chopper circuit, operated at 500 Hz, is shown below.

If the maximum value of load current is 10 A, then the maximum current

through the main (M) and auxiliary (A) thyristors will be
(A) iMmax = 12 A and iAmax = 10 A
(B) iMmax = 12 A and iAmax = 2 A
(C) iMmax = 10 A and iAmax = 12 A
(D) iMmax = 10 A and iAmax = 8 A

A solar energy installation utilize a three – phase bridge converter to feed

energy into power system through a transformer of 400 V/400 V, as shown
below.

9. The maximum current through the battery will be

(A) 14 A (B) 40 A (C) 80 A (D) 94 A

10. The kVA rating of the input transformer is

(A) 53.2 kVA (B) 46.0 kVA (C) 22.6 kVA (D) 7.5 kVA
11. Circuit turn-off time of an SCR is defined as the time
A. taken by the SCR turn of
B. required for the SCR current to become zero
C. for which the SCR is reverse biased by the commutation circuit
D. for which the SCR is reverse biased to reduce its current below the holding current
Answer : Option C

12. The transistor used in the circuit shown below has a β of 30 and ICBO is negligible

If the forward voltage drop of diode is 0.7V, then the current through collector will be
A. 168 mA
B. 108 mA
C. 20.54mA
D. 5.36 mA
Answer : Option D

13. A voltage commutated chopper circuit, operated at 500Hz, is shown below.

If the maximum value of load current is 10A, then the maximum current through the main (M) and auxiliary
(A) thyristors will be
A.
B.
C.

D.
Answer : Option A

14. A single-phase thyristor-bridge rectifier is fed from a 230 V, 50 Hz, single-phase AC mains. If it is
delivering a constant DC current of 10 A, at firing angle of 30º, then value of the power factor at AC mains is

A. 0.87
B. 0.9
C. 0.78
D. 0.45

Answer : Option C

15. A single-phase full-bridge voltage source inverter (VSI) is fed from a 300 V battery. A pulse of 120º
duration is used to trigger the appropriate devices in each half-cycle. The rms value of the fundamental
component of the output voltage, in volts, is

A. 234
B. 245
C. 300
D. 331
Answer : Option A

16. The typical ratio of latching current to holding current in a 20 A thyristor is

A. 5.0
B. 2.0
C. 1.0
D. 0.5
Answer : Option B

17. A half-controlled single-phase bridge rectifier is supplying an R-L load. It is operated at a firing angle α
and the load current is continuous. The fraction of cycle that the freewheeling diode conducts is

A. 1/2

B.

C.
D.
Answer : Option D

18. The i-v characteristics of the diode in the circuit given below are

The current in the circuit is

A. 10 mA
B. 9.3 mA
C. 6.67 mA
D. 6.2 mA
Answer : Option D

19. For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following
statements is TRUE?

A. All of the four are majority carrier devices.

B. All the four are minority carrier devices
C. IGBT and MOSFET are majority carrier devices, whereas Diode and Thyristor are minority carrier
devices.
D. MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices.
Answer : Option D

20. For the circuit shown in the figure below, assume that diodes D1, D2 and D3 are ideal.

The DC components of voltages v1 and v2, respectively are

A. 0 V and 1 V
B. -0.5 V and 0.5 V
C. 1 V and 0.5 V
D. 1 V and 1 V
Answer : Option B

21. In the 3-phase inverter circuit shown, the load is balanced and the gating scheme is 1800 -conduction
mode. All the switching devices are ideal

The rms value of load phase voltage is

A. 106.1 V
B. 141.4 V
C. 212.2 V
D. 282.8 V

Answer : Option B

22. In the 3-phase inverter circuit shown, the load is balanced and the gating scheme is 1800 -conduction
mode. All the switching devices are ideal

If the dc bus voltage Vd = 300 V, the power consumed by 3-phase load is

A. 1.5 kW
B. 2.0 kW
C. 2.5 kW
D. 3.0 kW

Answer : Option D

23. The input voltage VDC of the buck-boost converter shown below varies from 32 V to 72 V. Assume that all
components are ideal, inductor current is continuous, and output voltage is ripple free. The range of duty ratio
D of the converter for which the magnitude of the steady state output voltage remains constant at 48 V is

A.

B.

C.

D.

Answer : Option A

24. Assuming that the diodes in the given circuit are ideal, the voltage V0 is

A. 4V
B. 5V
C. 7.5V
D. 12.12V
Answer : Option B

25. The power electronic converter shown in the figure has a single-pole double-throw switch. The pole P of
the switch is connected alternately to throws A and B. The converter shown is a _______
A. step-down chopper (buck converter)
B. half-wave rectifier
C. step-up chopper (boost converter)
D. full-wave rectifier
Answer : Option A

26. Figure shows a composite switch consisting of a power transistor (BJT) in series with a diode. Assuming
that the transistor switch and the diode are ideal , the I-V characteristic of the composite switch is

A.

B.

C.

D.
Answer : Option C

27. The fully controlled thyristor converter in the figure is fed from a single-phase source. When the firing
angle is 0°, the dc output voltage of the converter is 300V. What will be the output voltage for a firing angle of
60°, assuming continuous conduction?
A. 150 V
B. 210 V
C. 300 V
D. 100π V
Answer : Option A

28. In the figure shown below, the chopper feeds a resistive load from a battery source. MOSFET Q is
switched at 250 kHz, with a duty ratio of 0.4. All elements of the circuit are assumed to be ideal

The Peak to Peak source current ripple in amps is

A. 0.96
B. 0.144
C. 0.192
D. 0.288
Answer : Option C

29. In the figure shown below, the chopper feeds a resistive load from a battery source. MOSFET Q is
switched at 250 kHz, with a duty ratio of 0.4. All elements of the circuit are assumed to be ideal

The average source current in Amps in steady-state is

A. 3/2
B. 5/3
C. 5/2
D. 15/4
Answer : Option B

30. The transistor circuit shown uses a silicon transistor with VBE = 0.7V, IC ≈ IE and a dc current gain of 100.
The value of V0 is

A. 4.65V
B. 5V
C. 6.3V
D. 7.23V
Answer : Option A

31. The Voltage Source Inverter (VSI) shown in the figure below is switched to provide a 50 Hz, square-wave
ac output voltage (v0) across an R-L load. Reference polarity of v0 and reference direction of the output
current i0 are indicated in the figure. It is given that R = 3 Ω, L = 9.55 mH.

In the interval when v0 < 0 and i0 > 0 the pair of devices which conducts the load current is
A.

B.

C.

D.
Answer : Option D
32. The Voltage Source Inverter (VSI) shown in the figure below is switched to provide a 50 Hz, square-wave
ac output voltage (v0) across an R-L load. Reference polarity of v0 and reference direction of the output
current i0 are indicated in the figure. It is given that R = 3 Ω, L = 9.55 mH.

Appropriate transition i.e., Zero Voltage Switching (ZVS) / Zero Current Switching (ZCS) of the IGBTs
during turn-on / turn-off is
A. ZVS during turn off
B. ZVS during turn-on
C. ZCS during turn off
D. ZCS during turn-on
Answer : Option D

33. An SCR is considered to be a semi-controlled device because

A. it can be turned OFF but not ON with a gate pulse

B. it conducts only during one half-cycle of an alternating current wave
C. it can be turned ON but not OFF with a gate pulse
D. it can be turned ON only during one half-cycle of an alternating voltage wave
Answer : Option C

34. Assuming the diodes to be ideal in the figure, for the output to be clipped, the input voltage vi must be
outside the range

A. −1V to − 2V
B. −2V to − 4V
C. +1V to − 2V
D. +2V to − 4V
Answer : Option B
35. In the figure shown, all elements used are ideal. For time t<0, S1 remained closed and S2 open. At t =
0, S1 is opened and S2 is closed. If the voltage Vc2 across the capacitor C2 at t = 0 is zero, the voltage across
the capacitor combination at t=0+ will be

A. 1V
B. 2V
C. 1.5 V
D. 3V
Answer : Option C

36. Transformer and emitter follower can both be used for impedance matching at the output of an audio
amplifier. The basic relationship between the input power Pin and output power Pout in both the cases is

A. Pin = Pout for both transformer and emitter follower

B. Pin > Pout for both transformer and emitter follower

C. Pin < Pout for transformer and Pin = Pout for emitter follower

D. Pin = Pout for transformer and Pin < Pout for emitter follower
Answer : Option A

37. A single-phase SCR based ac regulator is feeding power to a load consisting of 5Ω resistance and 16 mH
inductance. The input supply is 230 V, 50 Hz ac. The maximum firing angle at which the voltage across the
device becomes zero all throughout and the rms value of current through SCR, under this operating condition,
are

A.

B.
C.

D.
Answer : Option C

38. The electron and hole concentrations in an intrinsic semiconductor are ni per cm3 at 300 K. Now, if
acceptor impurities are introduced with a concentration of NA per cm3 (where NA >> ni , the electron
concentration per cm3 at 300 K will be
A. ni

B. ni + NA

C. NA - ni

D. ni/NA
Answer : Option D

39. In a p n junction diode under reverse biased the magnitude of electric field is maximum at

A. the edge of the depletion region on the p-side

B. the edge of the depletion region on the n-side
C. the p n junction
D. the centre of the depletion region on the n-side
Answer : Option C

40. The correct full wave rectifier circuit is

A.

B.

C.
D.
Answer : Option C

41. When a bipolar junction transistor is operating in the saturation mode, which one of the following
statement is TRUE about the state of its collector-base (CB) and the baseemitter (BE) junctions?

A. The CB junction is forward biased and the BE junction is reverse biased.

B. The CB junction is reversed and the BE junction is forward biased.
C. Both the CB and BE junctions are forward biased.
D. Both the CB and BE junctions are reverse biased.
Answer : Option C

42. The p-region has a greater concentration of __________ as compared to the n-region in a
P-N junction.
a) holes
b) electrons
c) both holes & electrons
d) phonons
Answer: a

43. A p-type semiconductor material is doped with ____________ impurities whereas a n-type
semiconductor material is doped with __________ impurities
a) acceptor, donor
b) acceptor, acceptor
c) donor, donor
d) donor, acceptor
Answer: a

44. In the p & n regions of the p-n junction the _________ & the ___________ are the majority
charge carriers respectively.
a) holes, holes
b) electrons, electrons
c) holes, electrons
d) electrons, holes
Answer: c

45. The n-region has a greater concentration of _________ as compared to the p-region in a P-N
junction diode.
a) holes
b) electrons
c) both holes & electrons
d) phonons
Answer: b
46. Which of the below mentioned statements is false regarding a p-n junction diode?
a) Diode are uncontrolled devices
b) Diodes are rectifying devices
c) Diodes are unidirectional devices
d) Diodes have three terminals

Answer: d

47. In the p & n regions of the p-n junction the _________ & the ___________ are the minority
charge carriers respectively.
a) holes, holes
b) electrons, electrons
c) holes, electrons
d) electrons, holes
Answer: d

48. Lets assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3, as
such the p-n junction so formed would be termed as a
a) p– n–
b) p+ n–
c) p– n+
d) p+ n+

Answer: b

49. When a physical contact between a p-region & n-region is established which of the following is
most likely to take place?
a) Electrons from N-region diffuse to P-region
b) Holes from P-region diffuse to N-region
c) Both of the above mentioned statements are true
d) Nothing will happen

Answer: c

50. Which of the following is true in case of an unbiased p-n junction diode?
a) Diffusion does not take place
b) Diffusion of electrons & holes goes on infinitely
c) There is zero electrical potential across the junctions
d) Charges establish an electric field across the junctions

Answer: d