IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO.
4, APRIL 2017
Al2O3/AlGaN Channel Normally-Off MOSFET on
Silicon With High Breakdown Voltage
Joseph J. Freedsman, Takeaki Hamada, Makato Miyoshi, and Takashi Egawa, Member, IEEE
Abstract — A normally-Off metal-oxide-semiconductor
field-effect transistor (MOS-FET) is proposed by using
AlInN/AlGaN heterostructure grown on silicon. The AlGaN
channel MOSFET with Al2 O3 layer as gate insulator
exhibits a drain current of 90 mA/mm at the gate bias of
+8 V, an ON/OFF drain-current ratio of 1.4 × 108 , a peak
field-effect mobility of 97 cm2 /V·s, and threshold voltage
of +2.4 V, respectively. With significant reduction in leakage
currents, the MOS-FET with a gate-to-drain spacing of 20 µm
delivers a high breakdown of 993 V. The present results
of Al2 O3 /AlGaN normally-Off MOSFET signifies promising
prospects for future high power and high voltage applica-
tions.
Index Terms — AlGaN channel, normally-Off, MOS-FET,
buffer leakage, breakdown voltage (BV).
I. I NTRODUCTION
T HE AlInN/GaN heterostructure based field-effect tran-
sistors (FETs) have recently emerged as excellent can-
didates for high frequency and high power applications.
Its uniquely large built-in spontaneous polarization charges
provide high two-dimensional electron gas density (2-DEG),
which brings superior on-current capabilities than AlGaN/GaN
FETs [1]. Excellent direct current (DC) and radio-frequency
performances were demonstrated by using these devices
[2], [3]. A high breakdown of 3 kV was achieved for
AlInN/GaN metal-oxide-semiconductor (MOS)-device on SiC
with AlGaN as back barrier [4]. Normally-Off operation
was also realized in AlInN/GaN based MOS-FETs [5], [6].
Despite these improvements, a high off-state drain leak-
age is a persistent issue which often reduces the ON/OFF
drain-current ratio (ION /IOFF ) and can induce premature
breakdown [2]–[7].
Kuzmik et al., proposed that the off-state breakdown voltage
(BVOFF ) in AlInN/GaN devices is primarily governed by a
highly conductive GaN channel [8]. Subsequently, enhance-
ments in BVOFF were suggested by lowering the electric
Manuscript received December 2, 2016; revised January 13, 2017
and January 20, 2017; accepted January 30, 2017. Date of publication
February 1, 2017; date of current version March 22, 2017. This work
was supported by the Super Cluster Program of the Japan Science and
Technology Agency. The review of this letter was arranged by Editor
T. Palacios.
J. J. Freedsman and T. Hamada are with the Research Center for
Nano-Devices and Advanced Materials, Nagoya Institute of Technology,
Nagoya 466-8555, Japan (e-mail: freedy54@gmail.com).
M. Miyoshi and T. Egawa are with the Research Center for Nano-
Devices and Advanced Materials, Nagoya Institute of Technology,
Nagoya, Japan, and also with the Innovation Center for Multi-Business of
Nitride Semiconductors, Nagoya Institute of Technology, Nagoya, Japan.
Color versions of one or more of the figures in this letter are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/LED.2017.2662710
0741-3106 © 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
497
field locally underneath the ohmic contacts by using Schot-
tky source/drain [9], or under the gate by fluoride plasma
treatment [10], as well as by using a thick and C-doped GaN
buffer [11].
Nevertheless, most of the AlInN/GaN devices exhibited
BVOFF values that are par below the existing AlGaN/GaN
counterparts [12]. This is possibly due to an improved carrier
properties such as higher 2-DEG density and/or mobility in
AlInN/GaN devices which might cause a high off-state leakage
current and therefore reduce the BVOFF .
Meanwhile, Nanjo et al., employed AlGaN layer as chan-
nel and showed remarkable enhancements in BVOFF with
increasing Al-mole fraction [13]. Likewise, an AlGaN-channel
MIS-FET with a higher Al-mole fraction of 0.75 delivered
a high breakdown field of 200 V/μm [14]. Following works
on AlGaN-channel devices with AlN and AlInN as respective
barriers also indicates considerable improvements in BVOFF
[15], [16]. Recently, we have also demonstrated metalorganic
chemical vapor deposition (MOCVD) grown AlInN/AlGaN
heterostructure based FET that exhibited a high 2-DEG as well
as high breakdown field [17], [18]. In fact, these encouraging
results on emerging new class of ultra-wide bandgap (UBWG)
AlGaN-channel devices with higher breakdown field suggest
they are suitable alternate to next-generation power electron-
ics [19]. In addition, recent theoretical predictions indicate
they are also potential candidates for normally-Off operation
with threshold voltage (VT H > 3 V) [20]. Moreover, all
the prior works on AlGaN-channel based devices are on
AlN/sapphire templates. Therefore, it is imperative to demon-
strate AlGaN-channel device with such features on a low-cost
silicon substrate.
To make full advantage, we have used MOCVD grown
AlInN/AlGaN/Si heterostructure and propose for the first
time an Al2 O3 /AlGaN channel normally-Off MOS-FET on
Si. As fabricated Al2 O3 /AlGaN MOS-FET exhibits good DC
characteristics. Due to significant reduction in leakage currents
by using AlInN/AlGaN/SLS/Si heterostructure, the MOS-FET
with a gate-to-drain spacing (L G D ) of 20 μm delivers a
remarkable BVOFF close to 1 kV.
II. D EVICE S TRUCTURE AND E XPERIMENTS
The AlInN/AlGaN heterostructure used in this work was
grown on Si by using Taiyo Nippon Sanso MOCVD
SR-4000 system. The heterostructure consists of a
100-nm-thick AlN nucleation layer, 3-μm-thick strained-layer-
super lattice (SLS), 1-μm-thick Al0.05 Ga0.95 N channel, and
1-nm-thick AlN spacer and 10-nm-thick Al0.85 In0.15 N barrier,
respectively. Room temperature Hall-effect measurements
498
Fig. 1. Schematic cross-section of the Al2 O3 /AlGaN channel
normally-Off MOS-FET on silicon.
yielded a 2-DEG density of 1.3 × 1013 cm−2 with a
mobility of 186 cm2 V−1 s−1 . The fabrication process for
the Al2 O3 /AlGaN channel MOS-FET commenced with the
mesa isolation by using BCl3 plasma based reactive ion
etching (RIE). Source/drain ohmic contacts were defined by
photolithography and then evaporation of Ti/Al/Ni/Au metal
stack followed by annealing at 800 ° C in N2 ambient. The
contact and sheet resistances (RC andR S H ) measured from
the transmission line model were 1 ·mm and 939 /,
respectively. The recessed-gate structure was formed by
etching the barrier layer with a BCl3 gas based RIE and
at a low RF power of 5 W for 150 s. After the gate-
recess, a 20-nm-thick Al2 O3 layer was deposited at 300 ° C
by atomic layer deposition (ALD). In the ALD process,
trimethyl-aluminum (TMA) was used as metal precursor
and O3 and H2 O vapor in sequential pulses were used as
oxidants. Post deposition annealing of the oxide was carried
at 600 ° C to improve the oxide/semiconductor interface.
The use of a thick device grade Al2 O3 layer is to facilitate
normally-Off operation enabling a high positive gate swing
and to reduce gate leakage, respectively [21]. The device
fabrication was completed with the evaporation of gate and
pad metals Pd/Ti/Au. Fig. 1 shows the schematic cross-section
of the Al2 O3 /AlGaN normally-Off MOS-FET. The MOS-FET
subjected to DC measurements features a gate length (L G )
of 2 μm, gate-to-source distance (L G S ) of 4 μm, and
L G D of 20μm, respectively. The field-effect mobility (μFE )
was extracted by using ‘FAT-FET’ with 100-μm-long L G .
The lateral and vertical buffer strengths were estimated by
using mesa-isolated ohmic contacts (10-μm inter-electrode
spacing) and circular shaped diodes (100-μm in diameter),
respectively. During breakdown measurements, the devices
were immersed in an inert Flourinert (FC-40) solution to
avoid surface flashover. The criteria for lateral and vertical
breakdowns are respective voltages at currents of 1 mA/mm
and 1 A/cm2 .
III. R ESULTS AND D ISCUSSION
The Al2 O3 /AlGaN MOS-FET exhibited typical DC output
and transfer characteristics as shown in Fig. 2(a) and 2(b).
A drain current maximum (I D S,max ) of 90 mA/mm accom-
panied by a specific-on resistance of 22.5 m·cm2 was
observed at a gate bias (VG S ) of +8 V. With respect
to AlGaN channel devices, the I D S,max is expected to be
low and can be further increased by improving the ohmic
IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 4, APRIL 2017
Fig. 2. (a) Typical DC output and (b) transfer characteristics of normally-
Off Al2 O3 /AlGaN MOS-FET. (c) IDS − VGS and IGS − VGS characteristics
of the device in semi-log scale. (d) Typical C-V curve measured at
100 kHz and the extracted field-effect mobility of a ‘FAT-FET’ with
100-µm-long LG .
characteristics [13]–[19]. The MOS-FET exhibited normally-
Off operation with a VT H of +2.4 V as extracted from the
linear extrapolation of the transfer curve. The drain and gate
currents (I D S , IG S )-VG S characteristics in semi-log scale are
shown in Fig. 2(c). The MOS-FET showed low subthreshold
leakage current (∼10−10 A), which is at least 2 to 6 orders
lower in magnitude compared to conventional AlInN/GaN
devices reported in literature [2]–[8]. The excellent insulating
property of the ALD-Al2 O3 layer was reflected from a low
IG S value of 17 nA/mm at a maximal VG S of +8 V. A high
ION /IOFF of 1.4 × 108 was also realized for this device.
Fig. 2(d) shows the extracted μFE for the Al2 O3 /AlGaN MOS-
FET at a low drain bias (V D S ) of 0.1 V, by using μFE =
G M L G /(WG C M O S V D S ). Corresponding C-V curve measured
at 100 kHz is also shown. Considering the device geometry,
an extracted peak μFE−peak of 97 cm2 /V·s indicates effective
modulation of the gate over Al2 O3 /AlGaN MOS-channel
that can be competitive with some of the high-performance
Al2 O3 /GaN channel normally-Off MOS-FETs [22], [23].
To gain insight of AlInN/AlGaN heterostructure on
breakdown characteristics, the vertical and lateral leakage
measurements were carried out in the first place. As refer-
ence, conventional AlInN/GaN devices were also measured.
Fig. 3(a) represents the comparison of vertical leakage cur-
rents as a function of critical electric field (E C ). Assisted
by high quality SLS multi-pairs [12], the vertical leakage
currents are in proximity irrespective of the heterostructures
and the E C was close to 2.3 MV/cm. The E C of present
vertical diodes are consistent with our reported value for
GaN-on-Si [24]. For the AlGaN-based vertical diode with
only 5 % of Al concentration, the E C is comparable to
that of GaN-vertical diodes. Nevertheless, this could be
improved by growing thicker AlGaN layer with higher Al
concentration [25].
FREEDSMAN et al.: Al2 O3 /AlGaN CHANNEL NORMALLY-OFF MOSFET ON SILICON
Fig. 3. (a) Two-terminal vertical, and (b) lateral breakdown char-
acteristics of MOCVD grown AlInN/AlGaN heterostructure on Silicon.
Insets: Illustration of cross-section of device structures and measurement
configuration.
The lateral breakdown characteristics are shown in Fig. 3(b).
For AlInN/GaN structure, the lateral leakage increases expo-
nentially with increase in V D S > 90 V and an E C
of 0.4 MV/cm was observed. Interestingly, unlike the vertical
breakdown characteristics, the influence of the AlGaN channel
can be seen. The onset of exponential increase in leakage is
delayed to a V D S of 300 V. The corresponding E C for this
structure was enhanced by 140 % (E C = 1 MV/cm). The
observed leakage between inter-electrodes is due to carrier
injection from source-to-drain via respective channels. Further,
these results validates that the lateral transport mechanism
is predominant for both the device and the parasitic leakage
current was considerably suppressed due to a high resistive
AlGaN channel. A similar source-injection induced buffer
leakage (SIBL) mechanism has been reported in AlGaN/GaN
devices [26].
The three-terminal BVOFF characteristics of the MOS-FETs
are shown in Fig. 4 (a). Our BVOFF is defined as V D S at
which a leakage current of 1 mA/mm was observed and
the device subjected to measurement undergoes a permanent
breakdown. With a high quality ALD-Al2 O3 as gate insulator
the IG was 11 μA/mm until breakdown, and the I D was
found to be dominant and triggers the breakdown mecha-
nism as aforementioned. Although, the present Al2 O3 /AlGaN
MOS-FET could endure I D S as low as 5 μA/mm at high V D S
499
Fig. 4. (a). Three-terminal BVOFF characteristics of the Al2 O3 /AlGaN
channel MOS-FET with an LGD of 20 mm. The dotted line represents
the BVOFF of a typical AlInN/GaN device with similar dimensions. (b) EC
versus Al content in AlGaN channel from recent reports compared with
this work, (LGD was taken into account for EC ).
of 740 V. This device with an L G D of 20 μm delivered a high
BVOFF of 993 V. For the conventional GaN-channel MOS-FET,
the BVOFF was limited to 62 V as shown in Fig. 4(a). This
is due to the high drain leakage caused by a higher 2-DEG
density (∼3 x 1013 cm−2 ). Fig. 4 (b) summarizes the EC as a
function of Al composition in recent reports on AlGaN channel
devices in context to this work. It is worthy to mention, that
the EC of our Al2 O3 /AlGaN normally-Off MOS-FET on Si is
compatible with that of AlGaN channel normally-On devices
on AlN/sapphire templates [13], [14], [16], [18].
IV. C ONCLUSION
In brief, we have experimentally demonstrated Al2 O3 /
AlGaN channel normally-Off MOS-FET by using MOCVD
grown AlInN/AlGaN heterostructure on Si. The MOS-FET
shows prominent features of an I D S,max of 90 mA/mm,
ION /IOFF of 108, and a VT H of +2.4 V, respectively. Owing
to significant reduction in off-state leakage currents, this
device with an L G D of 20 delivers a high BVOFF of 993 V.
These results suggests that AlInN/AlGaN/Si devices are
potential candidates for future high power and high voltage
applications.
500
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