N.M.A.M.

INSTITUTE OF
TECHNOLOGY
Nitte-574110

AEC SIMULATION REPORT

VI CHARACTERISTICS OF ENHANCEMENT
MOSFET

Submitted by,

Charan 4NM17EC032
Crystal V Dsouza 4NM17EC033
Densey Maben 4NM17EC038

Section ‘C’
 VI CHARACTERISTICS OF ENHANCEMENT
MOSFET

AIM
To determine the transfer characteristic and output characteristics of
enhancement NMOSFET and hence to find transconductance, channel
resistance and intrinsic gain of it.

COMPONENTS & APPARATUS REQUIRED

N-MOSFET BS170
Resistors(1Mohms, 1k ohms)
Variable Voltage source

THEORY
MOSFET stands for metal oxide semiconductor field effect transistor.
MOSFET has four terminals: gate, source, drain and substrate or body. The
region between the drain and source regions is called channel.
There are two types of MOSFETs:
 enhancement type and
 depletion type.
In depletion type, there is a thin layer of physical channel, whereas in
enhancement type channel is induced by forming an inversion layer by
applying gate voltage. When there is potential difference across drain and
source, charge carriers in the channel flow resulting in current. The
inversion layer properties are controlled by gate voltage. Thus it is a voltage
controlled device.
Two basic types of MOSFET are
 n-channel and
 p-channel MOSFETs.
In n channel MOSFET current is due to the flow of electrons in
inversion layer and in p channel current is due to the flow of holes.

The working principle of MOSFET depends upon the MOS capacitor. The
semiconductor surface below the oxide layer and between the drain and
source terminal can be inverted from p-type to n-type by applying a positive
gate voltage. The holes present beneath the oxide layer experience repulsive
force and are pushed deeper into the substrate. The depletion region is then
populated by the bound negative charges, which are associated with the
acceptor atoms. The gate positive voltage also attracts electrons towards the

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surface forming an inversion layer. Now, if a voltage is applied between the
source and the drain, current flows freely between the source and drain.

CIRCUIT DIAGRAM

PROCEDURE
I)TRANSFER CHARACTERISTICS
 Set Vds= 5V, vary Vgs in steps of 0.05V.
 Note Vgs and Id.
 Plot Id Vs Vgs graph.
 Calculate the slope of the curve, which is the value of the
transconductance gm of the device. Also note down the threshold
voltage V of the device.
 Repeat the procedure for Vds= 10 V.

II)OUTPUT CHARACTERISTICS
 Set Vgs=Vth.
 Vary Vds in steps of 1 V, note down Id.
 Plot Id vs Vds graph.
 Calculate the (slope)-1 of the curve in saturation region. This is the
value of drain resistance rd.
 Repeat the procedure for Vgs= Vth+ 1V.
 Calculate the intrinsic gain µ = gm.rd

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OBSERVATIONS
GRAPHS
I)TRANSFER CHARACTERISTICS

Transfer characteristics when Vds=5V

Transfer characteristics when Vds=10V

Vth= 3.5V

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II)OUTPUT CHARACTERISTICS
Vgs = Vth = 3.5V

Output characteristics when Vgs=3.5V

Vgs = 4.5V

Output characteristics when Vgs=4.5V

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CALCULATIONS

𝛿𝐼𝑑𝑠
Slope= 𝛿𝑉𝑔𝑠
−2.4100861𝑚𝐴
=−196.00307𝑚𝑉
gm = 0.0122962 mho

𝛿𝐼𝑑𝑠 2.793065µ𝐴
Slope= =
𝛿𝑉𝑑𝑠 335.1227𝑉
=8.33445e-009
rd=(Slope)-1
= 972.23Ω

Intrinsic gain
µ = gm.rd
=0.0122962 mho x 972.23Ω
=11.9547

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