BT139X 600e

BT139X-600E
Triac; sensitive gate

Rev. 03 — 23 September 2004 Product data sheet
1. Product profile
1.1 General description

Passivated, sensitive gate triac in a ‘full pack’ SOT186A (TO-220) plastic package.
1.2 Features
■ High sensitivity in all four quadrants.
1.3 Applications
■ General purpose bidirectional switching ■ Phase control.
1.4 Quick reference data

■ VDRM ≤ 600 V ■ IGT ≤ 10 mA (T2+ G+; T2+ G−; T2− G−)
■ IT(RMS) ≤ 16 A ■ IGT ≤ 25 mA (T2− G+).
■ ITSM ≤ 155 A
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 main terminal 1 (T1)
mb
2 main terminal 2 (T2) T2 T1
G
3 gate (G) sym051
mb isolated
1 2 3
SOT186A (TO-220)
Philips Semiconductors BT139X-600E
Triacs; sensitive gate
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BT139X-600E - plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3 lead TO-220 ‘full pack’
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage [1] - 600 V
IT(RMS) RMS on-state current full sine wave; Ths ≤ 38 °C - 16 A
ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C
prior to surge
t = 20 ms - 155 A
t = 16.7 ms - 170 A
I2t I2t for fusing t = 10 ms - 120 A2s
dIT/dt repetitive rate of rise of on-state current after ITM = 20 A; IG = 0.2 A;
triggering dIG/dt = 0.2 A/µs
T2+ G+ - 50 A/µs
T2+ G− - 50 A/µs
T2− G− - 50 A/µs
T2− G+ - 10 A/µs
IGM peak gate current - 2 A
VGM peak gate voltage - 5 V
PGM peak gate power - 5 W
PG(AV) average gate power over any 20 ms period - 0.5 W
Tstg storage temperature −40 +150 °C
Tj junction temperature - 125 °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
9397 750 13439 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 23 September 2004 2 of 12

001aab096
25 25
Ptot α= Ths(max)
(W) 180 (°C)
20 45
120
90
15 60 65
30
10 85
α
5 α 105
0 125
0 5 10 15 20
IT(RMS) (A)
α = conduction angle.
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.
001aab102
160
ITSM IT ITSM
(A)
120
T
t
Tj(initial) = 25 °C max
80
40
0
1 10 102 103
n
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles;
maximum values.

001aab092
103
ITSM
(A)
102
(1)
IT ITSM
(2)
T
t
Tj(initial) = 25 °C max
10
10−2 10−1 1 10 102
T (ms)
tp ≤ 20 ms.
(1) dIT/dt limit.
(2) T2− G+ quadrant.
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
001aab090 001aab095
50 20
IT(RMS) IT(RMS)
(A) (A) (1)
40
15
30
10
20
5
10
0 0
10−2 10−1 1 10 −50 0 50 100 150
surge duration (s) Ths (°C)
f = 50 Hz; Ths ≤ 38 °C. (1) Ths ≤ 38 °C.

Fig 4. RMS on-state current as a function of surge Fig 5. RMS on-state current as a function of mounting
duration; maximum values. base temperature; maximum values.

5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-hs) thermal resistance junction full or half cycle with heatsink - - 4.0 K/W
to heatsink compound
full or half cycle without heatsink - - 5.5 K/W
compound
Rth(j-a) thermal resistance junction in free air - 55 - K/W
to ambient
001aab097
10
Zth(j-hs)
(K/W) (1)
(2)
1
(3)
(4)
10−1
PD
10−2
tp t
10−3
10−5 10−4 10−3 10−2 10−1 1 10
tp (s)
(1) Unidirectional without heatsink compound.

(2) Unidirectional with heatsink compound.
(3) Bidirectional without heatsink compound.
(4) Bidirectional with heatsink compound.
Fig 6. Transient thermal impedance as a function of pulse width.
6. Isolation characteristics
Table 5: Isolation limiting values and characteristics
Ths = 25 °C unless otherwise specified.
Visol RMS value isolation voltage from all three f = 50 to 60 Hz; sinusoidal - - 2500 V
terminals to external heatsink waveform; R.H. ≤ 65 %;
clean and dust free
Cisol capacitance from pin 2 to external heatsink f = 1 MHz - 10 - pF

7. Characteristics
Table 6: Characteristics
Tj = 25 °C unless otherwise specified.
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; Figure 8
T2+ G+ - 2.5 10 mA
T2+ G− - 4 10 mA
T2− G− - 5 10 mA
T2− G+ - 11 25 mA
IL latching current VD = 12 V; IGT = 0.1 A;
Figure 10
T2+ G+ - 3.2 30 mA
T2+ G− - 16 40 mA
T2− G− - 4 30 mA
T2− G+ - 5.5 40 mA
IH holding current VD = 12 V; IGT = 0.1 A; - 4 45 mA
Figure 11
VT on-state voltage IT = 20 A; Figure 9 - 1.2 1.6 V
VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Figure 7 - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 °C
ID off-state leakage VD = VDRM(max); Tj = 125 °C - 0.1 0.5 mA
current
Dynamic characteristics
dVD/dt critical rate of rise of VDM = 67 % VDRM(max); - 50 - V/µs
off-state voltage Tj = 125 °C; exponential
waveform; gate open circuit
tgt gate controlled ITM = 20 A; VD = VDRM(max); - 2 - µs
turn-on time IG = 0.1 A; dIG/dt = 5 A/µs

001aab101 001aab448
1.6 3
VGT(Tj) IGT (Tj)

VGT(25°C) IGT(25°C) (1)
(2)
1.2 2 (3)
(4)
0.8 1
0.4 0
−50 0 50 100 150 −50 0 50 100 150
Tj (°C) Tj (°C)
(1) T2− G+.

(2) T2+ G−.
(3) T2− G−.
(4) T2+ G+.
Fig 7. Normalized gate trigger voltage as a function of Fig 8. Normalized gate trigger current as a function of
junction temperature. junction temperature.
001aab094 001aab100
50 3
IT
(A) (1) (2) (3) IL(Tj)
40 IL(25°C)
2
30
20
1
10
0 0
0 1 2 3 −50 0 50 100 150
VT (V) Tj (°C)
VO = 1.195 V.
Rs = 0.018 Ω.
(1) Tj = 125 °C; typical values.
(2) Tj = 25 °C; maximum values.
(3) Tj = 125 °C; maximum values.
Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of
junction temperature.

001aab099 001aab452
3 103
IH(Tj)
IH(25°C) dVD /dt
(V/µs)
2
102
0 10
−50 0 50 100 150 0 50 100 150
Tj (°C) Tj (°C)
Fig 11. Normalized holding current as a function of Fig 12. Critical rate of rise of off-state voltage as a
junction temperature. function of junction temperature; minimum
values.
8. Package information
Epoxy meets requirements of UL94 V-0 at 1⁄8 inch.

9. Package outline
Plastic single-ended package; isolated heatsink mounted;

1 mounting hole; 3 lead TO-220 'full pack' SOT186A
E A
P A1
q
D1 mounting
T base
L2 L1
K
Q
b1
L b2
1 2 3
b w M c
e
e1
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)

(1) (2)
UNIT A A1 b b1 b2 c D D1 E e e1 j K L L1 L2 P Q q T w
max.
mm 4.6 2.9 0.9 1.1 1.4 0.7 15.8 6.5 10.3 2.7 0.6 14.4 3.30 3.2 2.6 3.0
2.54 5.08 3 2.5 0.4
4.0 2.5 0.7 0.9 1.0 0.4 15.2 6.3 9.7 1.7 0.4 13.5 2.79 3.0 2.3 2.6
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
02-03-12
SOT186A 3-lead TO-220F
02-04-09
Fig 13. Package outline; SOT186A (TO-220).


10. Revision history

Table 7: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
BT139X_600E_3 20040923 Product data sheet - 9397 750 13439 BT139X_600E_2
Modifications: • The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
BT139X_600E_2 20011001 Product specification - - BT139X_SERIES_E_1
BT139X_SERIES_E_1 19970901 Product specification - - -

11. Data sheet status
Level Data sheet status [1] Product status [2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions 13. Disclaimers

Short-form specification — The data in a short-form specification is Life support — These products are not designed for use in life support
extracted from a full data sheet with the same type number and title. For appliances, devices, or systems where malfunction of these products can
detailed information see the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
Limiting values definition — Limiting values given are in accordance with
at their own risk and agree to fully indemnify Philips Semiconductors for any
the Absolute Maximum Rating System (IEC 60134). Stress above one or
damages resulting from such application.
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any Right to make changes — Philips Semiconductors reserves the right to
other conditions above those given in the Characteristics sections of the make changes in the products - including circuits, standard cells, and/or
specification is not implied. Exposure to limiting values for extended periods software - described or contained herein in order to improve design and/or
may affect device reliability. performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Application information — Applications that are described herein for any
Change Notification (CPCN). Philips Semiconductors assumes no
of these products are for illustrative purposes only. Philips Semiconductors
responsibility or liability for the use of any of these products, conveys no
make no representation or warranty that such applications will be suitable for
license or title under any patent, copyright, or mask work right to these
the specified use without further testing or modification.
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
6 Isolation characteristics . . . . . . . . . . . . . . . . . . 5
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package information . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information . . . . . . . . . . . . . . . . . . . . 11
© Koninklijke Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 23 September 2004
Document number: 9397 750 13439
Published in The Netherlands

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BT139X-600E

Triac; sensitive gate

1.1 General description

1.4 Quick reference data

Product data sheet Rev. 03 — 23 September 2004 2 of 12

Product data sheet Rev. 03 — 23 September 2004 3 of 12

f = 50 Hz; Ths ≤ 38 °C. (1) Ths ≤ 38 °C.

Product data sheet Rev. 03 — 23 September 2004 4 of 12

(1) Unidirectional without heatsink compound.

Product data sheet Rev. 03 — 23 September 2004 5 of 12

Product data sheet Rev. 03 — 23 September 2004 6 of 12

VGT(Tj) IGT (Tj)

(1) T2− G+.

Product data sheet Rev. 03 — 23 September 2004 7 of 12

Product data sheet Rev. 03 — 23 September 2004 8 of 12

Plastic single-ended package; isolated heatsink mounted;

DIMENSIONS (mm are the original dimensions)

OUTLINE REFERENCES EUROPEAN

Fig 13. Package outline; SOT186A (TO-220).

Product data sheet Rev. 03 — 23 September 2004 9 of 12

10. Revision history

Product data sheet Rev. 03 — 23 September 2004 10 of 12

11. Data sheet status

12. Definitions 13. Disclaimers

14. Contact information

Product data sheet Rev. 03 — 23 September 2004 11 of 12

© Koninklijke Philips Electronics N.V. 2004

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