CMF10120D-Silicon Carbide Power MOSFET

Z-FeTTM MOSFET
VDS = 1200 V

ID(MAX) = 24 A
N-Channel Enhancement Mode
RDS(on) = 160mΩ

Features Package

• High Speed Switching with Low Capacitances

• High Blocking Voltage with Low RDS(on)
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant

TO-247-3
Benefits

• Higher System Efficiency

• Reduced Cooling Requirements
• Increased System Switching Frequency

Applications

• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
Part Number Package
• Switch Mode Power Supplies
CMF10120D TO-247-3

Maximum Ratings (TC = 25˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note

24 VGS@20V, TC = 25˚C
ID Continuous Drain Current A Fig. 10
13 VGS@20V, TC = 100˚C

Pulse width tP limited by Tjmax

IDpulse Pulsed Drain Current 49 A
TC = 25˚C

EAS Single Pulse Avalanche Energy 1.2 J ID = 10A, VDD = 50 V,

L = 20 mH Fig. 15
EAR Repetitive Avalanche Energy 0.8 J tAR limited by Tjmax

ID = 10A, VDD = 50 V, L = 15 mH
IAR Repetitive Avalanche Current 10 A
tAR limited by Tjmax

VGS Gate Source Voltage -5/+25 V

Ptot Power Dissipation 134 W TC=25˚C Fig. 9

-55 to
TJ , Tstg Operating Junction and Storage Temperature
+135
˚C

TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s

1 Nm
Md Mounting Torque
8.8 lbf-in
M3 or 6-32 screw

1 CMF10120D Rev. A
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0V, ID = 50μA
2.4 3.5 VDS = VGS, ID = 0.5 mA
V
3.1 4.1 VDS = VGS, ID = 1.0 mA
VGS(th) Gate Threshold Voltage Fig. 11
1.8 V VDS = VGS, ID = 0.5 mA, TJ = 135ºC
2.3 V VDS = VGS, ID = 1.0 mA, TJ = 135ºC
0.5 50 VDS = 1200V, VGS = 0V
IDSS Zero Gate Voltage Drain Current μA
5 150 VDS = 1200V, VGS = 0V, TJ = 135ºC
IGSS Gate-Source Leakage Current 0.25 μA VGS = 20V, VDS = 0V
160 200 VGS = 20V, ID = 10A
RDS(on) Drain-Source On-State Resistance mΩ Fig. 3
190 240 VGS = 20V, ID = 10A, TJ = 135ºC
4.2 VDS= 20V, IDS= 10A
gfs Transconductance S Fig. 6
3.9 VDS= 20V, IDS= 10A, TJ = 135ºC
Ciss Input Capacitance 928
VGS = 0V
Coss Output Capacitance 63
pF Fig. 13
VDS = 800V
Crss Reverse Transfer Capacitance 7.5
f = 1MHz

Eoss Coss Stored Energy 32 μJ VAC = 25mV Fig 14

td(on)v Turn-On Delay Time 8.8

VDD = 800V, VGS = 0/20V
tfv Fall Time 21
ID = 10A
ns fig. 17
td(off)V Turn-Off Delay Time 38 RG(ext) = 2.5Ω, RL = 40Ω

trV Rise Time 34 Timing relative to VDS

RG Internal Gate Resistance 13.6 Ω f = 1MHz, VAC = 25mV

Built-in SiC Body Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note
3.5 VGS = -5V, IF=5A, TJ = 25ºC
VSD Diode Forward Voltage V
3.1 VGS = -2V, IF=5A, TJ = 25ºC
trr Reverse Recovery Time 138 ns
VGS = -5V, IF=10A, TJ = 25ºC
Qrr Reverse Recovery Charge 94 nC VR = 800V, Fig. 22
diF/dt= 100A/μs
Irrm Peak Reverse Recovery Current 1.57 A

Thermal Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note

RθJC Thermal Resistance from Junction to Case 0.66 0.82
RθCS Case to Sink, w/ Thermal Compound 0.25
K/W Fig. 7
RθJA Thermal Resistance From Junction to Ambient 40

Gate Charge Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note
Qgs Gate to Source Charge 11.8
VDD = 800V, VGS = 0/20V
Qgd Gate to Drain Charge 21.5 nC ID =10A Fig.12
Per JEDEC24 pg 27
Qg Gate Charge Total 47.1

2 CMF10120D Rev. A
Typical Performance

50 50

45 45

40 40

35 35

30 30
ID (A)

ID (A)
25 25

20 20

15 15

10 10

5 5

0 0
0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12
VDS (V) VDS (V)

Figure 1. Typical Output Characteristics TJ = 25ºC Figure 2. Typical Output Characteristics TJ = 135ºC

2 350

1.8 VGS = 20 V
300
1.6
VGS = 20 V
1.4 250
Normalized RDS(on)

RDS(on) (mΩ)

1.2
200
135oC
1
150 25oC
0.8

0.6 100

0.4
50
0.2

0 0
0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 45 50
TJ (oC) ID (A)

Figure 3. Normalized On-Resistance vs. Temperature Figure 4. On-Resistance vs. Drain Current

800 30

VD = 20 V
700
25

600
TJ = 25oC
20
500
RDS(on) (mΩ)

ID = 10 A
ID (A)

400 15 135oC

300
10
TJ = 135oC 25oC
200

5
100

0 0
10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
VGS (V) VGS (V)

Figure 5. On-Resistance vs. Gate Voltage Figure 6. Typical Transfer Characteristics

3 CMF10120D Rev. A
Typical Performance

1 100
DC:

0.5 tp ≤ 1 µs

0.3 tp = 10 µs
Limited
100E-3 by RDS(on)
0.1
10
0.05 tp = 100 µs
ZthJC (oC/W)

ID (A)
0.02
10E-3
0.01
tp = 1 ms

1
tp = 10 ms
1E-3
SinglePulse
DC

0.1
100E-6
1 10 100 1000
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
tp (s) VDS (V)

Figure 7. Transient Thermal Impedance (Junction - Case)

Figure 8. Safe Operating Area
with Duty Cycle

160 25

140
20
120

100
15
PD (W)

ID (A)

80

10
60

40
5
20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC (oC) TC (oC)

Figure 9. Power Dissipation Derating Curve Figure 10. Continuous Current Derating Curve

4.5 25

4
20
3.5 ID = 1 mA

3 15
VGS (V)

2.5
VGS(th) (V)

10
2 ID = 0.5 mA
ID = 10 A
VDD = 800 V
1.5 5

1
0
0.5

0 -5
-75 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50
TJ (oC) Gate Charge (nC)

Figure 11. Gate Threshold Voltage vs. Figure 12. Typical Gate Charge Characteristics
Temperature (25°C)

4 CMF10120D Rev. A
Typical Performance

10000 10000

Ciss Ciss
1000 1000
Capacitance (pF)

Capacitance (pF)
Coss
Coss
100 100

Crss
Crss
10 10

1 1
0 20 40 60 80 100 120 140 160 180 200 0 100 200 300 400 500 600 700 800
VDS (V) VDS (V)

Figure 13A and 13B. Typical Capacitances vs. Drain Voltage at VGS = 0V and f = 1 MHz

40 11

10 VGS = 0/20V 2500

35 VDD = 50V
9 L = 20 mH VDS
EAS = 1.2 J
30
8 2000

25 7
ID
Eoss (µJ)

6 1500

VDS (V)
ID (A)

20
5

15 4 1000

3
10
2 500
5
1

0 0 0
0 100 200 300 400 500 600 700 800 0 0.001 0.002 0.003 0.004 0.005 0.006

VDS (V) Time (sec)

Figure 14. Typical COSS Stored Energy Figure 15. Typical Unclamped Inductive Switching
Waveforms Showing Avalanche Capability

80 90
tD(off)v tD(off)v
70 VGS = 0/20V 80 VGS = 0/20V
VDD = 400V VDD =800V
RL = 40 Ω RL = 80 Ω
70
60 ID = 10 A ID = 10 A
TA = 25oC TA = 25oC trv
60
50
trv
Time (nsec)

tfv
Time (nsec)

50
40
tfv
40
30
30
20 tD(on)v
tD(on)v 20

10
10

0 0
0 5 10 15 20 25 0 5 10 15 20 25
External Gate Resistor (Ω) External Gate Resistor (Ω)

Figure 16. Resistive Switching Times vs. Figure 17. Resistive Switching Times vs.
External RG at VDD = 400V, ID = 10A External RG at VDD = 800V, ID = 10A

5 CMF10120D Rev. A
Typical Performance

350 450

300 400
ETOT,SW
VGS = 0/20V
RG = 15 Ω Tot 350
250 VDD = 800V
Switching Energy (µJ)

L = 856 µH ETOT,SW

Switching Energy (µJ)

FWD: C4D05120A 300
TA = 25oC
200
250 EON

150 200
EOFF
150
100
EON EOFF VGS = 0/20V
100
RG = 20 Ω Tot
VDD = 800V
50
50 L = 856 µH
FWD: C4D05120A
ID = 10 A
0 0
4 5 6 7 8 9 10 11 0 25 50 75 100 125 150
Peak Drain Current (A) TJ (oC)

Figure 18. Clamped Inductive Switching Energy vs. Figure 19. Clamped Inductive Switching Energy vs.
Drain Current (Fig. 20) Junction Temperature (Fig 20)

C4D05120A
856μH 5A, 1200V
SiC Schottky
+
800V
42.3μf
-

CMF10120D

Figure 20. Clamped Inductive Switching Waveform Test

Circuit

VDS
90%

10%
VGS
td(on)v tfv td(off)v trv

ton toff

Figure 21. Switching Test Waveforms for Transition times

6 CMF10120D Rev. A
Test Circuit Diagrams and Waveforms

trr

Ic
trr Qrr= id dt
tx
∫

856μH CMF10120D tx
10% Irr
Vcc
10% Vcc
+
Vpk
800V
42.3μf Irr
-

Diode Recovery
CMF10120D Waveforms

t2
Diode Reverse
Recovery Energy
Erec= id dt
t1
∫
t1 t2

Fig 22. Body Diode Recovery Test Fig 23. Body Diode Recovery Waveform

EA = 1/2L x ID2
FOR OFFICIAL USE ONLY – Not Cleared for Open Release

FOR OFFICIAL USE ONLY – Not Cleared for Open Release

Fig 24. Unclamped Inductive Switching Test Circuit Fig 25. Unclamped Inductive Switching waveform
for Avalanche Energy

ESD Ratings

ESD Test Total Devices Sampled Resulting Classification

ESD-HBM All Devices Passed 1000V 2 (>2000V)
ESD-MM All Devices Passed 400V C (>400V)
ESD-CDM All Devices Passed 1000V IV (>1000V)

7 CMF10120D Rev. A
 Package Dimensions
Inches Millimeters
Package TO-247-3 POS
Min Max Min Max
A .605 .635 15.367 16.130
B .800 .831 20.320 21.10

X Z C .780 .800 19.810 20.320

D .095 .133 2.413 3.380
E .046 .052 1.168 1.321
W F .060 .095 1.524 2.410
G .215 TYP 5.460 TYP
BB H .175 .205 4.450 5.210

Y
J .075 .085 1.910 2.160

AA K 6˚ 21˚ 6˚ 21˚
L 4˚ 6˚ 4˚ 6˚
M 2˚ 4˚ 2˚ 4˚
CC
N 2˚ 4˚ 2˚ 4˚
P .090 .100 2.286 2.540
Q .020 .030 .508 .762
R 9˚ 11˚ 9˚ 11˚
S 9˚ 11˚ 9˚ 11˚
T 2˚ 8˚ 2˚ 8˚
U 2˚ 8˚ 2˚ 8˚
V .137 .144 3.487 3.658
W .210 .248 5.334 6.300
(2)
X .502 .557 12.751 14.150
Y .637 .695 16.180 17.653
Z .038 .052 0.964 1.321
AA .110 .140 2.794 3.556
(1) BB .030 .046 0.766 1.168

(3) CC .161 .176 4.100 4.472

Recommended Solder Pad Layout

Part Number Package Marking

CMF10120D TO-247-3 CMF10120

TO-247-3
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the
“The levels
maximum of environmentally
concentration values (alsosensitive,
referred to persistent biologically
as the threshold toxic (PBT),
limits) permitted for suchpersistent
substances,organic pollutants
or are used (POP), application,
in an exempted or otherwise restricted
in accordance materials
with in
EU Directive
2002/95/EC
this productonarethe below
restriction
theofmaximum
the use of certain hazardousvalues
concentration substances
(alsoin referred
electrical and electronic
to as equipmentlimits)
the threshold (RoHS), as amended
permitted forthrough April 21, 2006.or are used in an
such substances,
exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic
equipment (RoHS), as amended through April 21, 2006.”

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited Cree, Inc.
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical 4600 Silicon Drive
equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2010-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree Fax: +1.919.313.5451
and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc. www.cree.com/power

8 CMF10120D Rev. A