MITSUBISHI IGBT MODULES

CM300DY-24A
HIGH POWER SWITCHING USE

CM300DY-24A

¡IC ................................................................... 300A

¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack

APPLICATION
AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

108 （13.7）
（7.5） 93±0.25 （7.5） （5.2）（8.5） 4

3-M6 NUTS
（7）
（24）

G2
6
48 ±0.25

（20）

E2
62

30
15

E1
6

C2E1 E2 C1
G1
17.5
（7）

21.5 25 25 24

4-φ6.5 MOUNTING HOLES

18 7 18 7 18 4 TAB #110 t=0.5
14 14 14 2.8
E2 G2
7.5
8.5

C2E1 E2 C1
–0.5
30 +1.0

22.2

LABEL
G1 E1

CIRCUIT DIAGRAM

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM300DY-24A
HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter Conditions Ratings Unit

VCES Collector-emitter voltage G-E Short 1200 V
VGES Gate-emitter voltage C-E Short ±20 V
IC DC, TC = 80°C*1 300
Collector current A
ICM Pulse (Note 2) 600
IE (Note 1) 300
Emitter current A
IEM (Note 1) Pulse (Note 2) 600
PC (Note 3) Maximum collector dissipation TC = 25°C*1 1890 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Terminals to base plate, f = 60Hz, AC 1 minute 2500 Vrms
— Main terminals M6 screw 3.5 ~ 4.5
Torque strength N•m
— Mounting M6 screw 3.5 ~ 4.5
— Weight Typical value 400 g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA
Gate-emitter threshold
VGE(th) IC = 30mA, VCE = 10V 6 7 8 V
voltage
IGES Gate leakage current ±VGE = VGES, VCE = 0V — — 0.5 µA
Collector-emitter saturation Tj = 25°C — 2.1 3.0
VCE(sat) IC = 300A, VGE = 15V V
voltage Tj = 125°C — 2.4 —
Cies Input capacitance — — 47
VCE = 10V
Coes Output capacitance — — 4 nF
VGE = 0V
Cres Reverse transfer capacitance — — 0.9
QG Total gate charge VCC = 600V, IC = 300A, VGE = 15V — 1350 — nC
td(on) Turn-on delay time — — 550
tr Turn-on rise time VCC = 600V, IC = 300A — — 180
ns
td(off) Turn-off delay time VGE = ±15V — — 600
tf Turn-off fall time RG = 1.0Ω, Inductive load — — 350
trr (Note 1) Reverse recovery time IE = 300A — — 250 ns
Qrr (Note 1) Reverse recovery charge — 9.0 — µC
VEC(Note 1) Emitter-collector voltage IE = 300A, VGE = 0V — — 3.8 V
Rth(j-c)Q IGBT part (1/2 module)*1 — — 0.066
Thermal resistance
Rth(j-c)R FWDi part (1/2 module)*1 — — 0.12 K/W
Rth(c-f) Contact thermal resistance Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 — 0.02 —
RG External gate resistance 1.0 — 16 Ω
*1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM300DY-24A
HIGH POWER SWITCHING USE

PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
600 4

SATURATION VOLTAGE VCE (sat) (V)

VGE = 15 Tj = 25°C VGE = 15V
20V
COLLECTOR CURRENT IC (A)

500 13

COLLECTOR-EMITTER
12 3
400

300 2
11
200
1
10
100 Tj = 25°C
9 Tj = 125°C
0 0
0 2 4 6 8 10 0 100 200 300 400 500 600

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE

VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 103
SATURATION VOLTAGE VCE (sat) (V)

Tj = 25°C 7
5
EMITTER CURRENT IE (A)

8
COLLECTOR-EMITTER

3
2
6
102
IC = 600A 7
4
IC = 300A 5

3
2
2 Tj = 25°C
IC = 120A Tj = 125°C
0 101
6 8 10 12 14 16 18 20 0 1 2 3 4 5

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
102 103
7 td(off)
CAPACITANCE Cies, Coes, Cres (nF)

7
5 tf
Cies 5
3 td(on)
SWITCHING TIME (ns)

2
3
101 2
7
5
3 Coes 102
2 7
tr Conditions:
100 5
VCC = 600V
7
5 Cres 3 VGE = ±15V
3 RG = 1.0Ω
2
2 Tj = 125°C
VGE = 0V Inductive load
10–1 –1 101 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

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 MITSUBISHI IGBT MODULES

CM300DY-24A
HIGH POWER SWITCHING USE

TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
OF FREE-WHEEL DIODE (IGBT part & FWDi part)
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)

103 100

THERMAL IMPEDANCE Zth (j–c’) (ratio)

Single Pulse
REVERSE RECOVERY TIME trr (ns)

7 7
5 TC = 25°C

NORMALIZED TRANSIENT
5
3 Under the chip
2
3
2 10–1 10–1
7 7
5 5
102 3 3
trr
7 2 2
Irr Conditions: IGBT part:
5 10–2 Per unit base = 10–2
VCC = 600V
7 7
3 VGE = ±15V 5 Rth(j–c) = 0.066K/W 5
RG = 1.0Ω FWDi part:
2 3 3
Tj = 25°C 2
Per unit base = 2
Inductive load Rth(j–c) = 0.12K/W
101 1 10 –3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3

EMITTER CURRENT IE (A) TIME (s)

SWITCHING LOSS vs. SWITCHING LOSS vs.

COLLECTOR CURRENT GATE RESISTANCE
(TYPICAL) (TYPICAL)
102 103
7 7
Conditions:
VCC = 600V
SWITCHING LOSS (mJ/pulse)

SWITCHING LOSS (mJ/pulse)

5 5
VGE = ±15V
3 3 IC = 300A
Tj = 125°C Esw(on)
2 2
Inductive load
C snubber at bus
101 10 2
Esw(off) Conditions:
7 7
VCC = 600V
5 VGE = ±15V 5 Esw(off)
Esw(on)
3 RG = 1.0Ω 3
Tj = 125°C
2 2
Inductive load
C snubber at bus
100 1 101 0
10 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 101 2 3 5 7 102

COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω)

RECOVERY LOSS vs.

RECOVERY LOSS vs. IE GATE RESISTANCE
(TYPICAL) (TYPICAL)
102 102
7 Conditions: 7
VCC = 600V
RECOVERY LOSS (mJ/pulse)

RECOVERY LOSS (mJ/pulse)

5 5
VGE = ±15V
3 RG = 1.0Ω 3
Tj = 125°C
2 2
Inductive load Err
C snubber at bus Err
101 101
7 7 Conditions:
VCC = 600V
5 5
VGE = ±15V
3 3 IE = 300A
Tj = 125°C
2 2
Inductive load
C snubber at bus
100 1 100 0
10 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 101 2 3 5 7 102

EMITTER CURRENT IE (A) GATE RESISTANCE RG (Ω)

Feb. 2009

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 MITSUBISHI IGBT MODULES

CM300DY-24A
HIGH POWER SWITCHING USE

GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 300A
GATE-EMITTER VOLTAGE VGE (V)

VCC = 400V
16
VCC = 600V
12

0
0 400 800 1200 1600 2000

GATE CHARGE QG (nC)

Feb. 2009