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PRACTICE 1: CHARACTERIZATION OF DIODE

LED AND MOSFET 2N7000
Maestrı́a en Ingenierı́a Electrónica
Benemerı́ta Universidad Autonóma de Puebla
Professor: Dr. Victor R. Gonzales Dı́az
Maribel Ramirez-Hernandez
Alfredo Gutierrez-Nava
Victor Romero-Bautista

Abstract—This document presents the characterization of the n-type MOSFET consists of a P-type silicon substrate within
electrical behavior of diode LED and N-MOS Transistor, using which there are two N-type diffused regions called Source-S
the transistor model 2N4007, with a experimental demonstration and Drain-D where the region between the source and the
in linear and saturation modes.
drain is under the influence of A metal contact, called a
Index Terms—Diode LED, MOS transistor, MOSFET, Satura- gate (Gate-G), as shown in Figure 2. If an intense positive
tion, Linear, Current, Voltage.
voltage is applied to the gate, the surface region of the P-type
substrate can be inverted, this will induce an N-type channel
I. INTRODUCTION connecting to the source and the drain. The conductivity of
A. Diode LED: this channel can be modulated by varying the gate voltage[1].
The light emitting diode is a diode that emits visible or
invisible (infrared) light when energizes. In any union p –
n polarized live is given, inside of the structure and mainly
near the junction, a recombination of holes and electrons.
This recombination requires that the energy processed by
free electrons be transformed into an other state. In all p-n
semiconductor junctions a part of this energy is released in
the form of heat and another in the form of photons. On
the figure 1, we can observe the structure of the Diode LED[2]. Figure 2. Structure of the MOS Transistor.

II. OBJETIVES
• Observe the behavior of the diode LED and N-MOS
transistor.

• Know the characteristics curves in different voltage

ranges

III. MATERIALS
• Protoboard
• Transistor MOSFET Type-N 2N7000.
Figure 1. Structure of the Diode LED.
• Resistor 330 OHMS
• Diode LED
• Wires
B. Transistor N-MOS:
IV. EXPERIMENTAL METHOD
Among the most important devices derived from the MOS
structure is the field effect transistor known as MOSFET. The A. Diode LED
To star the analysis of the Diode LED we use the circuit
on the figure 3.

Figure 3. Circuit used for the analysis of the Diode LED behavior.
We obtain the next table presented on the figure 4, with
the values of current ”Id”, applying a range of voltage on
”Vd” from -3V to 7V.
Figure 4. Table of Id values of the Diode LED.
Also we get the graph from the table values, presented on
the figure 5.
Figure 5. Graphic of the Diode behavior.
B. MOSFET transistor
The analysis of the Transistor starts with the circuit show
at the figure 6. Using three different values of ”Vgs” (Vgs
less than 0 ”Accumulation”, ”Vgs” major to 0 ”Depletion”,
Vgs major Vth ”Inversion”) and applying a range of voltage
from 0V to 10V in ”Vds” to analyze the different behavioral
of the MOSFET transistor.
The transistor that we used in this practice is the model
2N7000, it has a Vth max of 3V.
2
Figure 6. Circuit used for the analysis of the MOSFET type N, Model
2N7000.
We obtain the values of the current ”Ids”, they are show in
the table of the figure 7.
Figure 7. Table of Id values of the MOSFET transistor 2N7000.
Next we have the graph of the transistor behavior, here we
can see the different values of current ”Ids” for each ”Vgs”
applied.
Figure 8. Graphic of the MOSFET transistor behavior.
V. DISCUSSION
Based on the experimentation for obtain the analysis of
diode LED, it concludes that the behavior of this kind of
diode is linear starting on determinate potential in this case
the current start to pass since 2V and increase respect the
potential, for this experiment we use a 5mm red LED, still
we can conclude that the behavior is linear the response has
a light variation between the 2V and 4V, after that the curve
is linear, according with the documentation its suppose that
a LED start to conduce in 1.7V with a low resistance in
this case the resistance was of 330 ohm thus the potential
required was higher.
 3

In case of N-MOS transistor it observes that the mode

boundaries depend on a constant threshold voltage VTH,
which can be found on a datasheet. If VGS is smaller than
VTH, the NMOS is OFF and ID=0.

But if VGS is higher than VTH and VDS is higher than

VGS - VTH, then the NMOS is on and ID=k(VGS - VTH)2,
which is fixed with respect to VDS.

Otherwise, if VGS is higher than VTH and VDS is smaller

than VGS - VTH, the NMOS is said to be on saturation and
ID is increasing in VDS; a very rough linear approximation
is ID=k(VGS - VTH)VDS.

VI. CONCLUSION
A. Diode LED
Trough this practice we can be able to see the behavior of
Diode LED, it is a non linear device as the graph on the figure
3 shows. The current on the diode is cut off with less of 1.7
V in ”Vds” and starts to increase exponentially with 1.7 Volts
in ”Vds”.

B. Transistor MOSFET type N

In the practice of transistor we can observe three different
behavior: accumulation, depletion, inversion

1. When ”Vgs” is equal or less to zero: no current flows

from source to drain, as it can see on the graph 6, it is the
cut off region.

2. When ”Vgs” is less than ”Vth” and major to zero,

an electric field is created across the substrate that forms a
depletion region, this region let the current flows.

3 When ”Vgs” is major to ”Vth”, the electric field created

across the substrate

VII. REFERENCES
[1] Razavi 2001 Design of analog CMOS integrated circuits.

[2] Robert L. Boylestad 2002 Electronica: Teoria de

Circuitos y Dispositivos Electronicos.

[3] MOSFET Transistor http://www.onmyphd.com