Microwave & RF April 2013

inside track with
DDS SOURCE MAKING

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A pril | 2013
Volu me 52, Issue 4
Contents
Industry trends And AnAlysIs.
32 | Inside Track
Eran Eshed, Co-Founder of Altair Semiconductor,
discusses the future of LTE.
39 | Amplifiers Draw Upon Variety Of Technologies

Many different device technologies are employed for
gain in RF, microwave, and millimeter-wave amplifiers.
22
44 | RF ESSENTIALS
Automobiles Racing To Higher Frequencies
Wireless technologies are helping to boost the
convenience and safety of modern automobiles.
48| INDUSTRY INSIGHT

39 44 Handling The Heat In RF/MW Circuits
Frequency—G
105° 90° 92.2 Thermal management of circuits is growing more

Phase 120° 92.0
accumulator 135° F1 91.8
challenging thanks to rising power densities.
FTW 91.6
150°
∑ Phase 91.4
register 165° 91.2 64 desIgn feAtures.
0 –10
91.0
–20 0 1 2 3 4 5 6 7 8 9 10
52 | Source Serves FMCW Radar

±180°
Varactor voltage—V
52 –165° F3 60 DDS technology can provide the agility needed

fclk
Noise source to drive these high-performance radar systems.
60 | Phased-Array Antennas
Spectrum
DUT analyzer
TH, TC
Aid Wireless Communications
Source noise connected
directly to DUT 68 86 The use of hardware-based NIMO techniques can improve
the performance of a wireless communications system.
Cover story. 64 | Optimize Varactor-Tuned Oscillators

This simple model helps to understand the tuning
82Real-Time Analyzers sensitivity and linearity of a varactor diode.

Grab 50-GHz Signals 68 | Measure Noise Without A Calibrated Source
A new line of high-speed, broadband A variation of the Y-factor method can be used to achieve
spectrum analyzers boasts excellent accurate noise-figure measurements.
sensitivity and capture bandwidths of 76 | Helical Antenna Links GSM/UMTS
85 and 160 MHz. This compact, circularly polarized, dual-band
antenna provides notable bandwidth.
news & Columns. produCt teChnology.
11 Web Table 28 Company news 86 | pRoDUcT TRENDS

Of Contents 34 R&d Roundup Vacuum Devices Drive High Powers
Vacuum electron devices are still unmatched
13 Editorial 36 Microwaves In Europe by solid-state devices for their output power.
18 Feedback 80 Application notes
95 Advertiser’s Index 92 | New Products
20 news
We spotlight the newest, cutting-edge offerings.
26 People
speCIAl seCtIon.
Starts after p. 88
Microwaves&RF | visit www.mwrf.com 5

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Impedance: 50 +/- 1 Ohms Connector retention: ≥25 lbs.
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O C Kwit!h
STmor cabloe 36 GHz)
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OCTAVE BAND LOW NOISE AMPLIFIERS
Model No. Freq (GHz) Gain (dB) MIN Noise Figure (dB) Power -out @ P1-dB 3rd Order ICP VSWR
CA01-2110 0.5-1.0 28 1.0 MAX, 0.7 TYP +10 MIN +20 dBm 2.0:1
CA12-2110 1.0-2.0 30 1.0 MAX, 0.7 TYP +10 MIN +20 dBm 2.0:1
CA24-2111 2.0-4.0 29 1.1 MAX, 0.95 TYP +10 MIN +20 dBm 2.0:1
CA48-2111 4.0-8.0 29 1.3 MAX, 1.0 TYP +10 MIN +20 dBm 2.0:1
CA812-3111 8.0-12.0 27 1.6 MAX, 1.4 TYP +10 MIN +20 dBm 2.0:1
CA1218-4111 12.0-18.0 25 1.9 MAX, 1.7 TYP +10 MIN +20 dBm 2.0:1
CA1826-2110 18.0-26.5 32 3.0 MAX, 2.5 TYP +10 MIN +20 dBm 2.0:1
NARROW BAND LOW NOISE AND MEDIUM POWER AMPLIFIERS
CA01-2111 0.4 - 0.5 28 0.6 MAX, 0.4 TYP +10 MIN +20 dBm 2.0:1
CA01-2113 0.8 - 1.0 28 0.6 MAX, 0.4 TYP +10 MIN +20 dBm 2.0:1
CA12-3117 1.2 - 1.6 25 0.6 MAX, 0.4 TYP +10 MIN +20 dBm 2.0:1
CA23-3111 2.2 - 2.4 30 0.6 MAX, 0.45 TYP +10 MIN +20 dBm 2.0:1
CA23-3116 2.7 - 2.9 29 0.7 MAX, 0.5 TYP +10 MIN +20 dBm 2.0:1
CA34-2110 3.7 - 4.2 28 1.0 MAX, 0.5 TYP +10 MIN +20 dBm 2.0:1
CA56-3110 5.4 - 5.9 40 1.0 MAX, 0.5 TYP +10 MIN +20 dBm 2.0:1
CA78-4110 7.25 - 7.75 32 1.2 MAX, 1.0 TYP +10 MIN +20 dBm 2.0:1
CA910-3110 9.0 - 10.6 25 1.4 MAX, 1.2 TYP +10 MIN +20 dBm 2.0:1
CA1315-3110 13.75 - 15.4 25 1.6 MAX, 1.4 TYP +10 MIN +20 dBm 2.0:1
CA12-3114 1.35 - 1.85 30 4.0 MAX, 3.0 TYP +33 MIN +41 dBm 2.0:1
CA34-6116 3.1 - 3.5 40 4.5 MAX, 3.5 TYP +35 MIN +43 dBm 2.0:1
CA56-5114 5.9 - 6.4 30 5.0 MAX, 4.0 TYP +30 MIN +40 dBm 2.0:1
CA812-6115 8.0 - 12.0 30 4.5 MAX, 3.5 TYP +30 MIN +40 dBm 2.0:1
CA812-6116 8.0 - 12.0 30 5.0 MAX, 4.0 TYP +33 MIN +41 dBm 2.0:1
CA1213-7110 12.2 - 13.25 28 6.0 MAX, 5.5 TYP +33 MIN +42 dBm 2.0:1
CA1415-7110 14.0 - 15.0 30 5.0 MAX, 4.0 TYP +30 MIN +40 dBm 2.0:1
CA1722-4110 17.0 - 22.0 25 3.5 MAX, 2.8 TYP +21 MIN +31 dBm 2.0:1
ULTRA-BROADBAND & MULTI-OCTAVE BAND AMPLIFIERS
Model No. Freq (GHz) Gain (dB) MIN Noise Figure (dB) Power -out @ P1-dB 3rd Order ICP VSWR
CA0102-3111 0.1-2.0 28 1.6 Max, 1.2 TYP +10 MIN +20 dBm 2.0:1
CA0106-3111 0.1-6.0 28 1.9 Max, 1.5 TYP +10 MIN +20 dBm 2.0:1
CA0108-3110 0.1-8.0 26 2.2 Max, 1.8 TYP +10 MIN +20 dBm 2.0:1
CA0108-4112 0.1-8.0 32 3.0 MAX, 1.8 TYP +22 MIN +32 dBm 2.0:1
CA02-3112 0.5-2.0 36 4.5 MAX, 2.5 TYP +30 MIN +40 dBm 2.0:1
CA26-3110 2.0-6.0 26 2.0 MAX, 1.5 TYP +10 MIN +20 dBm 2.0:1
CA26-4114 2.0-6.0 22 5.0 MAX, 3.5 TYP +30 MIN +40 dBm 2.0:1
CA618-4112 6.0-18.0 25 5.0 MAX, 3.5 TYP +23 MIN +33 dBm 2.0:1
CA618-6114 6.0-18.0 35 5.0 MAX, 3.5 TYP +30 MIN +40 dBm 2.0:1
CA218-4116 2.0-18.0 30 3.5 MAX, 2.8 TYP +10 MIN +20 dBm 2.0:1
CA218-4110 2.0-18.0 30 5.0 MAX, 3.5 TYP +20 MIN +30 dBm 2.0:1
CA218-4112 2.0-18.0 29 5.0 MAX, 3.5 TYP +24 MIN +34 dBm 2.0:1
LIMITING AMPLIFIERS
Model No. Freq (GHz) Input Dynamic Range Output Power Range Psat Power Flatness dB VSWR
CLA24-4001 2.0 - 4.0 -28 to +10 dBm +7 to +11 dBm +/- 1.5 MAX 2.0:1
AMPLIFIERS WITH INTEGRATED GAIN ATTENUATION
Model No. Freq (GHz) Gain (dB) MIN Noise Figure (dB) Power -out @ P1-dB Gain Attenuation Range VSWR
CA001-2511A 0.025-0.150 21 5.0 MAX, 3.5 TYP +12 MIN 30 dB MIN 2.0:1
LOW FREQUENCY AMPLIFIERS
Model No. Freq (GHz) Gain (dB) MIN Noise Figure dB Power -out @ P1-dB 3rd Order ICP VSWR
CA001-2110 0.01-0.10 18 4.0 MAX, 2.2 TYP +10 MIN +20 dBm 2.0:1
CA001-2211 0.04-0.15 24 3.5 MAX, 2.2 TYP +13 MIN +23 dBm 2.0:1
CA001-2215 0.04-0.15 23 4.0 MAX, 2.2 TYP +23 MIN +33 dBm 2.0:1
CA001-3113 0.01-1.0 28 4.0 MAX, 2.8 TYP +17 MIN +27 dBm 2.0:1
CA002-3114 0.01-2.0 27 4.0 MAX, 2.8 TYP +20 MIN +30 dBm 2.0:1
CA003-3116 0.01-3.0 18 4.0 MAX, 2.8 TYP +25 MIN +35 dBm 2.0:1
CA004-3112 0.01-4.0 32 4.0 MAX, 2.8 TYP +15 MIN +25 dBm 2.0:1
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IN PHASE-NOISE PASSIVE COMPONENTS ISSUE
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From the
Editor
Drone Debate Continues

I
n this month’s “news” section, we highlight a portion of the jobs that are expect-
ed to be added as a result of the uptick of unmanned-aerial-system (UAs) develop-
ment and deployment throughout the Us. By 2025, the Association for Unmanned
Vehicle systems international (AUVsi) expects more than 100,000 new jobs to be cre-
ated nationally. Amid the continuing economic slump afflicting the Us, new jobs are a
sign of recovery and hope. And in many situations, such as forest fires, drones can be
critical to containment and even rescue efforts. Yet a storm has erupted over the use of
drones, due to concerns over privacy, public safety, political corruption, government
abuse, human-rights violations, and more.
simply put, their small size and stealthy nature make it possible for drones to go places
undetected. they do not need a declaration of war to cross a border and take out an
enemy. in fact, they make it possible for leaders to commit acts of war without taking any
credit for them—which means that such acts may not have to be justified to the public. on
the home front, drones are expected to become nearly ubiquitous—eliminating civilian
privacy in the process. individuals worry that we will get used to living in a constant state of
surveillance, potentially surrendering our privacy for promises of safety and progress.
no matter what the intended use is for drones, the fear is that the people who have the
power to control them are abusing that power and will continue to do so. Given the his-
tory of humanity, that is a well-founded fear. it also reflects the feelings—or suspicions—
of much of today’s inactive voting-eligible population in the Us. these individuals largely
say that they feel far removed from politicians, who they suspect answer to campaign
donors, lobbyists, and big businesses instead of serving the general population.
in the article, “Can Voters Fight Domestic Drones At the Ballot Box?,” which was post-
ed on The Atlantic on April 1, author Conor Friedersdorf quotes Glenn Greenwald, a col-
umnist for The Guardian: Greenwald “argues that opposing a future of ubiquitous drone
surveillance by the government ‘may be one area where an actual bipartisan/trans-par-
tisan alliance can meaningfully emerge, as most advocates working on these issues with
whom i’ve spoken say that libertarian-minded GoP state legislators have been as respon-
sive as more left-wing Democratic ones in working to impose some limits.’” Friedersdorf
adds: “Federal limits on drone surveillance, like the warrant requirement before Congress,
ought to be aggressively advocated by everyone who perceives the costs of failure.”
it seems that the drone controversy, which became a hot topic over the last couple
of years, has continued to gain momentum. Drones will be widely deployed in Us air-
space in 2015. For the first time since cell towers were met with a “not in my backyard”
response, a segment of the microwave industry is mired in controversy. it will be inter-
esting to see how it pans out, as the result will be largely symbolic of how much this
country is willing to accept technology’s place in citizens’ everyday lives. should some
of the current anti-drone legislation efforts prove successful, we also may not get quite
the booming job market that we expected. MWRF
Editor-In-Chief
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U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 448 rev K
april 2013
Editorial
european sales: Korea
editor in chief: NaNcy K. FriEdrich (212) 204-4373 marK durham 44 (0) 7958 564137 Jo youNg saNg (011)82-2-739-7840
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jack.browne@penton.com charlEs c.y. liu (866)2727 7799 mariE BrigaNti (877) 796-6947
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16 April 2013 | Microwaves&RF

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Feedback
PROBING FOR not real-time analyzers, whether these were portable EDITOR’S NOTE
PORTABILITY they were ruggedly built and instruments or not. Many of The editors of Microwaves &
Your March 2013 issue, in par- designed for portability, with the applications for me and my RF certainly appreciate your
ticular, the Product Feature on their large carrying handles associates require that a mea- readership and opinions.
the new pair of real-time spec- and their rechargeable bat- suring instrument be brought Unfortunately, as you noted,
trum analyzers from Tektronix teries. In their time, the 492P to a test site and operated it is not possible to cover
(www.tek.com), was of great in- and 494P portable spectrum under its own power. Although every detail on a new instru-
terest to me. The measurement analyzers could be found at the picture that was included ment in a one-page story.
capabilities of these two instru- quite a large number of remote in your report appears to show To answer your query,
ments—model RSA5115A, with test sites, antenna towers, and carrying handles on both sides these analyzers are not the
a frequency range of 1 Hz to 15 in communications-industry of the RSA5126A’s enclosure, portable instruments like
GHz, and model RSA5126A, repair vehicles. It is safe to say your article never mentions their predecessors, the 492P
which operates from 1 Hz to that those analyzers were an portability, or whether the and 494P, since they weigh
26.5 GHz—is quite impres- important part of cellular and analyzers can run on a battery 64.7 lbs (29 kg). And they are
sive for anyone working in other wireless communica- pack, or even the carrying designed for AC power, not
communications and with RF/ tions systems achieving their weight of each instrument. I battery. But they do include
microwave signals. reputations for performance would hope when you “fea- carrying handles to simplify
Your all-too-brief write- and reliability. ture” a product in the future transport and relocation,
up/review on these analyzers But, in spite of your efforts that you would include more of and they carry impressive
brought back fond memories to provide a “Product Fea- its vital features for the benefit measurement capabilities
of the firm’s models 492P and ture” on the RSA5115A and of your readers. (more information about
494P portable programmable RSA5126A analyzers, there was DR. SIMON MAQUEDA which can be gleaned from
spectrum analyzers. Although nothing in your review about BLOOMINGBURG, NY Tektronix’s website).
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Other product and company names listed are trademarks or trade names of their respective companies. 05532
Using multi-layered graphene
samples, this team of researchers
has figured out what causes low-
frequency electronic 1/f noise. They
were led by Alexander A. Balandin,
who is shown in the center (wearing
the blazer). (Photo courtesy of Prof.
A.A. Balandin, UC Riverside.)
REVEALED:
Source Of Low-Frequency 1/f Noise
A
LTHOUGH 1/f OR “PINK” OR “FLICKER” NOISE According to Balandin, previous studies could not test metal
was first discovered in vacuum tubes in 1925, it has films to thicknesses below about 8 nm. Graphene is 0.35 nm
been found everywhere from human heart rates to thick. In addition, it can be increased gradually—one atomic
electrical currents in materials and devices. In most plane at a time. He emphasized that this study was essential
material systems, however, its origin has remained a mystery. for the proposed applications of graphene in analog circuits,
In electronics in particular, the ques- communications, and sensors.
tion was whether 1/f noise was gen- In addition to Balandin, who also
erated on the surface of conductors serves as the Founding Chair of the
or inside them. At the University of Materials Science and Engineering
California, Riverside Bourns College Program at UC Riverside, the team of
of Engineering, a professor and a team researchers included Guanxiong Liu,
of researchers claim to have solved the Sergey Rumyantsev, and Michael S.
1/f noise problem. Shur, among others (see photo). The
This noise is actually a signal or pro- results of the research have been pub-
cess—one with a power spectral den- lished in the journal Applied Physics Let-
sity that is inversely proportional to the ters under the title: “Origin of 1/f Noise
frequency. It is a key factor in electronics, impacting electronic Pictured is a in Graphene Multilayers: Surface vs.
device size and more. In a radar or communication device like microscopy image Volume.”
a smartphone, for example, the signal’s phase noise is largely of the graphene The research at UC Riverside was
determined by the 1/f noise level in the transistors used. device used in the supported, in part, by the Semiconduc-
The team of researchers hailed from UC Riverside, Rens- 1/f experiments at tor Research Corp. and Defense Ad-
selaer Polytechnic Institute (RPI), and the Ioffe Physical- the University of vanced Research Project Agency (DAR-
Technical Institute of the Russian Academy of Sciences. The California, Riverside. PA) through the Center for Function
group was led by Alexander A. Balandin, Professor of Electrical (Image courtesy of Accelerated nanoMaterial Engineering
Engineering at UC Riverside. The researchers were able to Prof. A.A. Balandin, and the National Science Foundation.
answer questions on 1/f noise origin using a set of multi- UC Riverside.) The work at RPI was supported by the
layered graphene samples with thickness that continuous- US NSF under the auspices of I/UCRC
ly varied from around 15 atomic planes to a single layer of “CONNECTION ONE” at RPI and by the
graphene (see figure). NSF EAGER program.

1.5
1550 nm
1.0
Photonics Modulator 0.5 STANDARDSUPDATE
Quadrature
Reaches 60 Gb/s 0 •To ensure that its consumers enjoy a uniform
T
OGETHER WITH Fuji- -0.5 wireless power experience, PowerKiss (www.
kura Ltd. (www.fujikura. -1.0 powerkiss.com) is joining the POWER MATTERS
co.jp), researchers from -1.5 ALLIANCE (PMA; www.powermatters.org).
1.5 1.0 0.5 0 -0.5 -1.0 -1.5
Singapore’s A*STAR Institute In-phase PowerKiss currently provides over 1000 wireless
of Microelectronics (IME; www. charging spots at locations across Europe.
ime.a-star.edu.sg) have debuted •THE ALLIANCE FOR WIRELESS POWER
40- to 60-Gb/s silicon-based (A4WP; www.a4wp.org) has welcomed Sam-
optical modulators. The modula- sung Electro-Mechanics, Gill Industries, and
tors boast advanced multilevel Integrated Device Technology (IDT) to its
modulation formats for high- ity, which creates more data- board of directors. These companies join A4WP
speed, long-haul data transmis- communication throughput for a Co-Founders Qualcomm, Inc. and Samsung
sion. In doing so, they bring given optical channel. Electronics to expand smartphone market-seg-
the industry closer to attaining The modulators have demon- ment representation and impact on the A4WP
low-cost, ultra-high-bandwidth strated communication speeds board. Earlier this year, the group approved
and small-footprint optical com- of more than 40 and 60 Gb/s for the Alliance for Wireless Power Version 1.0
munications on silicon. DQPSK and QPSK, respectively. interoperability specification and demonstrated
Each modulator consists of For channel grid spacing of 50 prototype products.
a set of silicon phase shifters, GHz, for example, 40G DQPSK •THE WIFI ALLIANCE (www.wi-fi.org) and
which are integrated in a nested results in a spectral efficiency WIRELESS GIGABIT WIGIG ALLIANCE have
Mach-Zehnder configuration. In that is 2X that of 20G with con- finalized the agreement defining the consoli-
terms of multilevel modulations, ventional on-off keying (OOK) dation of WiGig technology with certification
the modulators rely on simple format. These new modulators development in the Wi-Fi Alliance. Essentially,
quadrature-phase-shift-keying are smaller than conventional the Wi-Fi Alliance will continue work begun in
(QPSK) and differential-QPSK lithium-niobate modulators. Be- the WiGig Alliance, which focuses on features
(DQPSK) formats. The result is ing CMOS-compatible, they also that extend WiGig capabilities beyond baseline
increased information capac- are less expensive to fabricate. connectivity. The consolidation of activities in
the Wi-Fi Alliance will deliver closely harmonized
Quote
connectivity and application-layer solutions us-
MARKET ing WiGig technology. Early 60-GHz implementa-
tions based on the WiGig specifications are now
entering the market.
Top 10 states projected to gain jobs and revenue from
unmanned aircraft systems (UASs) from 2015 to 2025:
•THE ZIGBEE ALLIANCE (www.zigbee.org) an-
nounced the completion and public availability
1. California 18,161 of its third specification, ZigBee IP. As an open
2. Washington 9967 standard for an IPv6-based full wireless-mesh-
3. Texas 8256 networking solution, ZigBee IP promises to
4. Florida 4803 provide seamless Internet connections to control
5. Arizona 4260 low-power, low-cost devices. The specification
6. Connecticut 4084 enhances the IEEE 802.15.4 standard by adding
network and security layers as well as an applica-
7. Kansas 3716
tion framework.
8. Virginia 3517
•THE PCISIG (www.pcisig.com) and MIPI AL
9. New York 3363
LIANCE (www.mipi.org) have begun procedural
10. Pennsylvania 2986 reviews of the Mobile PCI Express (M-PCIe)
This is according to economic data from the Asso- specification. The new specification enables the
ciation for Unmanned Vehicle Systems International
(AUVSI), which estimated the jobs that would be created PCI Express (PCIe) architecture to operate over
by the unmanned aircraft industry following the integration the MIPI M-PHY physical-layer technology. In
of unmanned aircraft systems into the US National Airspace
System (NAS). Integration is scheduled to take place in 2015. By doing so, it extends the benefits of the PCIe I/O
2025, AUVSI estimates that more than 100,000 new jobs will be cre- standard to mobile devices.
ated nationally. To see the full report, go to http://www.auvsi.org/econ-
report.

News
Eindhoven Is Proving Ground For Improving Traffic
A
s automobiles are designed how the connected car can automatically
with more intelligence, they can transmit braking, acceleration, and loca-
share what they “know” to improve tion data. such data can be analyzed by
traffic safety. in a 12-month smarter-traf- the central traffic authority to identify and
fic trial in eindhoven, the Netherlands, resolve road network issues. Relying on this telematics chip,
ibm (www.ibm.com) and NXP semicon- During the trial, ibm, NXP, and their analytics, and communications
ductors (www.nxp.com) demonstrated partners equipped 200 participating cars capabilities, connected-car technology
showed that it can share vehicle data
Powerful Multipath/Link
that will help traffic officials identify
and resolve road network issues.
Emulator
with a device containing the NXP telemat-
ics chip, “atoP” (see figure). it gathers
relevant data from the car’s central com-
munication system using the automotive
controller-area-network (CaN) bus. rele-
vant sensor data, such as indicators of pot-
holes or icy roads, was collected in-vehicle
Multipath Rayleigh & Rician Fading and transmitted to the cloud-enabled ibm
Unmanned Arial Vehicle (UAV) testing Hz h smarter traffic Center.
0 M dt
25 dwi
using ibm analytics, raw data from the
Sophisticated Satellite link emulation vehicles highlighted 48,000 incidents over
n
Mobile Comm’s on the move testing
ba
a period of six months from 1.8 billion sen-
sor signals. incidents included heavy rain,
black spots, and fog, among others.
Test solutions for ....
WIN-T - warfare information networks, tactical RFMD Changes
MUOS - mobile user objective system
GaAs Strategy
M
aNufaCturiNg will sooN
JTRS - Joint Tactical Radio System be phased out at rf micro De-
IRIS
vices, inc.’s (rfmD; www.rfmd.
- Internet routing in space com) Newton aycliffe, uK-based gallium-
arsenide (gaas) pseudomorphic-high-
electron-mobility-transistor (pHemt)
facility. most gaas manufacturing will
be transitioned to the company’s gaas
heterojunction-bipolar-transistor (Hbt)
Software showing mobile link setup manufacturing facility in greensboro, NC.
rfmD will partner with leading gaas Hbt
foundries for additional capacity.
the transition will occur over the next
9 to 12 months to support existing mil-
limeter-wave customer contracts. once
implemented, rfmD expects annual cost
savings of approximately $20 million.
the Newton aycliffe gaas pHemt fa-
cility had been rfmD’s primary source for
dBmCorp, Inc cellular switches. in recent years, howev-
32A Spruce Street  Oakland, NJ 07436 er, the firm has transitioned to higher-per-
Tel (201) 677-0008  Fax (201) 677-9444 formance, lower-cost silicon-on-insulator
RF Test Equipment for Wireless Communications www.dbmcorp.com (soi) switches. rfmD is currently seeking
a buyer for the Newton aycliffe facility.

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ISO 9001 ISO 14001 AS 9100

U.S. Patents
331 rev S
7739260, 7761442
IF/RF MICROWAVE COMPONENTS
News
Counterfeit Standard Singles Out Distributors
A
ccording to a 2011 Senate al Electro-technical commission’s feit-avoidance standard
arms Services committee esti- Quality assessment System (iEcQ) mandates oversight by
mate, counterfeit parts are costing for electronic components has third-party auditors.
US taxpayers more than $6 billion a year. been proposed. this certification, to ensure that testing
to address the problem of counterfeit dubbed aS6081, targets indepen- is performed when re-
electronic components infiltrating the dent distributors. quired, the certification
defense supply chain, the internation- the aS6081 international counter- demands transparency
between the distributor and
the procurement department purchas-
ing the electronic components.
the SaE aS6081 standard ensures
uniform requirements, practices, and
methods to mitigate the risk of distribu-
tors purchasing and supplying coun-
terfeit electronic parts throughout the
defense and aerospace supply chains.
this counterfeit avoidance Process
certification program is administered
by the iEc iEcQ based in geneva, Swit-
zerland. Secure components LLc (www.
securecomponents.com) is the first firm
to complete an audit by dnV, which cer-
tified that this distributor conforms to
the aS6081 counterfeit avoidance
Standard. the first phase of the Secure
components audit was witnessed by
anaB, the iaF MLa signatory accredita-
tion body of the US.
kudos
MArtin Cooper—The industry legend, who

led the engineering team that developed
the first mobile phone, has been award-
ed the Charles Stark Draper Prize by the
National Academy of Engineering (NAE).
On April 3, 1973, Cooper—at the time,
General Manager of Motorola’s Commu-
nications Systems Division—became the
first person to successfully make a hand-
held cell-phone call in public. The award,
the NAE’s highest honor, was presented
at a ceremony in Washington, DC.
CAsCAde MiCroteCh—Has been named an
Oregon Technology Award finalist in the
Technology Company of the Year – En-
terprise category. The award will be pre-
sented on April 25.
peregrine seMiConduCtor—Chief Financial
Officer Jay Biskupski has been named CFO
of the Year (Public Company) by the San
Diego Business Journal. He was one of
45 nominees across four categories.

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News
Gold-Tin
Solder Industry Mourns Loss Of Jerry Fishman, ADI CEO
A
nalog Devices (www.analog.com) has forayed its signal-processing excel-
lence into new capabilities across markets ranging from cellular to medi-
cal, entertainment, and automotive. Since 1996, much of these efforts were
spearheaded and inspired by Chief Executive Officer (CEO) Jerry Fishman. Fish-
man was known for inspiring ADI employees with humor, honesty, and an open,
direct manner. On March 28, Fishman passed away after an apparent sudden
heart attack. He was 67 years old.
Many of today’s veteran ADI employees were preceded by Fishman, who
joined the firm in 1971 with a role in product marketing. He enjoyed a number of
promotions through the years before being named President and Chief Operat-
• High temperature ing Officer (COO) in 1991. In 1996, Fishman was named President and CEO.
• Reliability In accordance with the company’s bylaws, ADI President Vincent Roche has
been appointed CEO on an interim basis by ADI’s Board of Directors. Relying on
• Strength the existing leadership team, Roche is hoping to seamlessly manage this dynamic
business. The thoughts and prayers of the staff of this magazine—and many in
• Die-attach the industry—go out to the Fishman family, as well as to Mr. Fishman’s extended
family at ADI.
• Semiconductor-
grade
Solder
Preforms • Custom
PEOPLE
packaging
MAURY MICROWAVE—Zhang Nianmin ney Advisor for Consumer Protection to
has been named General Manager of the former Federal Trade Commission (FTC)
company’s newly opened regional head- Chairman Jon Leibowitz. In addition,
Solder
quarters in Beijing, China. Nianmin previ- Heather Blanchard has been named
Paste
ously worked for Agilent Technologies as Director of Wireless Internet Develop-
a Sales Engineer, Market- ment (WID). Blanchard formerly served
ing Engineer, and Business as a Strategic Communications Consul-
Development Manager. In tant for New Cicada.
addition, Yang Dongliang LADYBUG TECHNOLOGIES—Orwill Haw-
Learn more:
http://indium.us/F615 has joined the company as a kins has been named Vice
Senior Applications En- DONGLIANG President of Marketing.
gineer based out of the Beijing office. In addition to this role,
Dongliang previously worked as an RF Hawkins has served as
Engineer at Ericsson. President for Inter-Pac,
RAYTHEON CO.—Dr. Thomas A. Kennedy Inc. for more than 25 years. HAWKINS
has been appointed Executive Vice Presi- BOEING—Has appointed Greg Hyslop
dent, Chief Operating Officer by the firm’s Vice President and General Manager of
board of directors. Kennedy previously Boeing Research & Technology. Hyslop
served as Raytheon’s Vice President and most recently served as Vice President
President of Integrated Defense Systems. and General Manager of Boeing Strategic
LEMKO CORP.—Has appointed Norman Missile & Defense Systems (SM&DS). Re-
Fekrat Chief Strategy and Revenue Offi- placing him in that role is Jim Chilton,
cer. Prior to joining Lemko, Fekrat served who was previously Vice President and
From One Engineer as a Vice President and Partner at IBM Program Manager for Boeing’s Explora-
To Another® Global Services with responsibility for tion Launch Systems office.
www.indium.com/gold Telecom Networks Solutions. E-CYCLE MOBILE—Co-Founder and Chief
askus@indium.com CTIA–THE WIRELESS ASSOCIATION—Debbie Executive Officer Christopher Irion has
ASIA • CHINA • EUROPE • USA Matties has joined the organization as been recognized as one of 2013’s Pros
Vice President of Privacy, a newly created to Know by Supply & Demand Chain
©2013 Indium Corporation role. Matties was previously Senior Attor- Executive magazine.

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CompanyNews
CONTRACTS
RELM Wireless—Has received orders from munici- RELM thetic-aperture-radar (SAR) application.
pal public-safety agencies totaling approximately WIRELESS Cambium Networks—The company’s PTP 45600 radio
$899,000. The agencies are purchasing digital radios, Wins multiple has been chosen for the US Air Force’s Theater Deploy-
base stations, and related accessories, which are col- public-safety able Communications (TDC PMO) program. The radio
orders
lectively intended for deployment in fire and law- will be used to provide voice, video, and data functions
enforcement applications. for both deployable warfighters and first-response mis-
CAMBIUM
NuWaves Engineering—Has been awarded two con- NETWORKS sions worldwide.
tracts in support of unmanned-aircraft-system (UAS) Nets Air Force RFMD—Has been selected by an undisclosed smart-
data-link range-extension programs. The awards—both radio deal phone manufacturer to supply multiple third- and
from undisclosed US Department of Defense (DoD) fourth-generation (3G and 4G) Long-Term-Evolution
prime contractors—include developmental work to customize (LTE) components. These components will be utilized in a 4G flag-
NuWaves’ power-amplifier (PA) modules. ship smartphone platform.
Space Systems/Loral (SSL)—Has been selected by Hughes Network Agilent Technologies—Plextek RF Integration has selected the
Systems to build a high-capacity, Ka-band broadband satellite. company’s Momentum software to simulate high-frequency cir-
Known as JUPITER 2/EchoStar XIX, the new satellite is expected cuit and MMIC designs.
to increase capacity for Hughes’ North American broadband Peregrine Semiconductor—The firm’s UltraCMOS phase-locked-
service by 50%. loop (PLL) frequency synthesizer and prescaler devices were de-
Mercury Systems—Has received a $2-million follow-on order from signed into six Globalstar mobile-communication satellites. Built
an unnamed defense prime contractor. The order is for digital- by Thales Alenia Space, the low-Earth orbit satellites were
signal-processing (DSP) modules intended for an airborne syn- launched on February 6.
FRESH STARTS
AWR Corp.—For a fourth consecutive year, Plessey has signed an Asian distribution rials and processes for electronics
the firm is offering its Graduate Gift Initia- agreement with Supreme Components, and energy-storage applications.
tive to graduating electrical engineering Inc. (SCI) covering the markets in Singa- Coaxicom—Has added sales represen-
students worldwide. This program provides pore, Thailand, Malaysia, and Vietnam. tatives in South America with specific
qualified graduates with free, fully func- XMA Corp.-Omni Spectra—Has appointed concentrations on Brazil and Argentina. In
tional one-year licenses of AWR software. High-tech Sales as its manufacturing repre- addition, the firm is developing a network
AR—Has added a subsidiary in Germany, sentative for the New England region. of representatives in Europe, Asia, and
known as AR Deutschland. This distributor Giga-tronics—Has agreed to sell its SCPM other foreign markets.
joins fellow European subsidiaries AR UK, product line to Teradyne for approximately Emrise Corp.—Has purchased the building
AR France, and AR Benelux. $1 million. The closing of the sale was and land that house its Pascall Electronics
Maury Microwave—Has opened a re- expected to occur on or about April 1. subsidiary in Ryde, England.
gional headquarters in Beijing, China. This Vaunix—Has enlisted Amska Amerikanska Custom MMIC—Has appointed Castle Mi-
location will offer service and support to Teleprodukter as its sales representative for crowave and SM Electronic Technologies
MauryÕs Chinese customer base. Sweden, Denmark, Norway, and Finland. as its technical sales representatives. Castle
National Technical Systems (NTS)—Has en- GPS Innovation Alliance—Five national Microwave will represent Custom MMIC in
tered into an agreement with RF Exposure organizations have joined the alliance as the United Kingdom while SM Electronic
Lab, a wireless testing laboratory. RF Expo- affiliate members: the American Trucking will fulfill that role in India.
sure will provide specific-absorption-rate Association, the Association for Unmanned Richardson RFPD—Has launched a website
(SAR) testing services at NTSÕ laboratory in Vehicle Systems International (AUVSI), Boat resource focused on silicon-carbide (SiC)
Fremont, CA. US, the National Rural Electric Coopera- technology for energy and power applica-
Luso Electronics—Has signed a franchised tive Association (NRECA), and the National tions (www.richardsonrfpd.com/sicpower).
distribution agreement with Rhode Island- Society of Professional Surveyors (NSPS). In addition to product and supplier
based A.T. Wall Co. Luso will distribute Digi-Key Corp. and MEMSIC—Have signed information, the section offers links to
A.T. WallÕs tubing components in France, a global distribution agreement. MEMSICÕs technical resources.
Ireland, and the United Kingdom. full line of MEMS sensor components, iner- Analog Devices—Is launching a series of
Plessey Semiconductors—Atlantik Elektron- tial systems, and wireless-sensor networks design conferences for analog, mixed-
ik GmbH has been named European sales is now available for purchase through Digi- signal, and embedded-systems engineers
representative for PlesseyÕs full product KeyÕs global websites. in collaboration with Xilinx and MathWorks.
line. This distribution agreement includes QLP—Has opened a 5600-sq.-ft materials Two events are currently scheduled: April
the regions of Central and Eastern Europe, laboratory in Woburn, MA. The facility will 25 in Boston, MA, and April 30 in Santa
Scandinavia, and Turkey. In addition, focus on developing next-generation mate- Clara, CA.

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U.S. Patents
7739260, 7761442
495 rev A
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ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 458 rev J
WORLD’S WIDEST SELECTION
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®
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IF/RF MICROWAVE COMPONENTS 359 rev U
News
Inside
Track
with
Eran Eshed,
CO-FOUNDER, A LTA I R S E M I C O N D U C T O R
Interview by NANCY FRIEDRICH
NF: Long Term Evolution (LTE) is becoming the dominant cellular-communications

technology being used by devices in the US. Obviously, the industry has gotten over the
initial hurdles. What issues stand in the way of full-scale deployment?
EE: This is primarily a matter of time. The competitive dynamics are such that once one signifi-
cant carrier starts deploying and achieves meaningful coverage, other carriers respond. The obvi-
ous example is the way that AT&T responded to Verizon Wireless’ aggressive LTE launch. De-
ploying cellular infrastructure is a capital-intense process and, even logistically, it takes
time. I am very much encouraged by the pace at which leading carriers deploy LTE
infrastructure in their respective markets. To note a few, there are Verizon Wire-
less and AT&T in the US; DoCoMo and Softbank in Japan; SKT and KT in Korea;
Yota in Russia; and Reliance Industries soon in India. This represents a potential
subscriber base of more than 1 billion before the end of this year.
NF: Having sold your chip to Verizon, you have unique insight into these net-
works. Beyond meeting the needs of today’s data-hungry consumers, what do
carriers hope to achieve with their increased capacity?
EE: To clarify, we achieved Verizon Wireless chipset certification. This means that
any Altair customer that wishes to develop and deploy a product on the Verizon
LTE network has a simpler and lower cost of doing so than before—and in com-
parison to alternative solutions, which are not yet certified. We will soon start see-
ing new services, such as HD voice-over-LTE (VoLTE) and video broadcast (using
LTE’s eMBMS feature), as well as various multimedia services like high-quality
video calling. Note that the push toward blanket-covering markets with LTE is
not only driven by capacity needs, but also by the desire to re-farm 3G spectrum
in favor of 4G. Doing so will lower the cost per bit and substantially enhance user
experience by means of higher speeds, lower latency, and better quality.
NF: How do additional services, such as medical applications like remote
monitoring and the control of smart homes, factor into these plans?
EE: The machine-to-machine (M2M) segment has high growth potential for
LTE. Most M2M services today are delivered over old second-generation
(2G) networks (GPRS/EDGE and CDMA). As carriers shut these networks
down, they migrate their customers onto LTE. This provides better cost/
efficiency while ensuring service longevity. These factors are very important
parameters for M2M customers that deploy a network of sensors, for example,
32
News
and want to avoid the costs associated are bringing this concept to bear in mar- success in the cellular market doesn’t
with truck roles for replacing them when kets like India, where cost is paramount. depend on an address in Silicon Valley?
carriers power off their 2G/3G networks. NF: Altair has a rather storied his- EE: Israel is a hub of immense talent in
NF: What do you believe are the biggest tory. I read that your management and the technology space—and specifically, in
issues still facing operators in the US? technology executives were among the the wireless-communications space. We
EE: A year ago, I would answer spectrum founding team of Libit Signal Processing. built a team of passionate and profession-
availability. But this doesn’t seem to be a That fabless chip company was acquired al individuals, who are fully committed
problem since AWS spectrum has been by Texas Instruments in 1999 for $365 to the success of the company and to the
auctioned. And LTE’s ability to bond vision that we outlined. Over
narrow bandwidth channels into one the years, we’ve established
logical and higher-bandwidth channel “I believe you sales offices in the US, China,
(“carrier aggregation,” in LTE terminol- India, Japan, Europe, and
ogy) ensures that even non-contiguous will see devices Taiwan.
and narrowband spectrum can be fully
utilized. At the end of the day, this is a
based on LTE-A NF: To succeed in the hand-
set market, a chipmaker has
CAPEX question—and its answer will chipsets in the to stay ahead of its competi-
help to determine the pace of deployment tion in price, performance,
and coverage. market in 2014.” size, etc.—while its competi-
NF: Looking at other countries and re- tors try everything they can
gions rolling out 4G, are they plagued by to overtake it. What do you
similar problems or different ones? million. Can you explain how you got consider Altair’s strong points, which
EE: LTE has a very fragmented band map. from there to Altair Semiconductor? allow it to stay in the lead?
In markets that cannot guarantee an EE: The core team of Altair was always EE: When it comes to LTE-only chipsets
attractive enough return on investment somehow involved in broadband- (i.e., without 2G/3G), we believe we have
for infrastructure and device vendors, the communications chip development. As a one of the highest-performing modems in
pace of deployment may be slower. This team—and under different companies— the market with unmatched power con-
is not a factor of chipset capability. For we developed more than six broadband- sumption and—no less important—the
a device maker to invest in creating a communications technologies from smallest silicon die in the market. So we
product variant that supports a certain concept to mass production and more are well positioned to cope with the ero-
band combination, a minimum volume than 40 different modem and radio chip- sion in LTE-chipset average selling prices
is required. sets over the course of the last 15 years. In (ASPs). We also have a very competitive
NF: Carriers now want to offer the smart- 2005, we identified the emerging trend of roadmap. We just announced two base-
phone to more budget-constrained mobile broadband. We decided to start band processors and a radio chip.
customers so that they too will start us- our own company to realize the potential NF: When do you expect LTE-Advanced
ing new data services. How can smart- of this market. We then developed a chip- (LTE-A) chipsets to begin being designed
phones be made less expensive? set processor, which was software-centric into smartphones and other devices?
EE: The key here is to remove 2G/3G sup- and allowed us to develop three different EE: We just announced a couple of LTE-
port from these phones and make them 4G technologies without having to spin A-capable chipsets, which will be in mass
LTE-only. This will eliminate the very high the chip. We started with WiMAX, but production before the end of this year.
costs associated with silicon—and maybe quickly realized that the world was going I believe you will see devices based on
more importantly, the royalty cost of 3G LTE. Since 2006, we have been focusing these chipsets in the market in 2014.
technologies. This, of course, requires on this market. NF: What challenges must be overcome
good enough coverage and the ability to NF: Which key executives have been for the successful adoption of LTE-A?
roam between markets. We believe we with the company through all of these EE: Power consumption is a major chal-
will start seeing this become a reality in iterations? lenge as speeds increase and the amount
2015 and beyond. EE: We are very proud to have almost all of processing required from the commu-
NF: Does Altair plan to help with senior-level management with us from nications engine grows dramatically.
this goal? day one to today. Our management is very We believe our unique processor
EE: Absolutely. Our strategy is centered enthusiastic and committed to what we architecture will allow us to overcome
on offering high-performance and very are trying to achieve, which has helped us this challenge and offer 10X higher LTE
cost-efficient LTE-only semiconductor get through some bumps in the road in speeds at comparable power consump-
solutions. A smartphone based on Altair the past. tion to existing 3G. This is essential for
technology and without support for 3G NF: Your headquarters is in Israel, cor- the user experience, which cannot
can achieve disruptive price points. We rect? I suppose that is more proof that degrade as technology evolves. MWRF

R&D Roundup
Compact Automotive Antennas Cross-Spectral

Juggle Multiple Bands Phase Noise Is
A
S AUTOMOBILES EVOLVE into in- are specifically designed to be integrated Measured On
dividual wireless-communications
networks, antenna makers have
in a printed-circuit board (PCB), placed
inside a plastic box, and mounted under
Terahertz Source
T
faced the task of providing ever-smaller the vehicle dashboard. The first version is a O ENSURE THE char-
antennas that handle more bands. Among planar printed antenna. It is fully integrated acterization of phase
the choices serving this market from place- into the PCB, minimizing cost. The second noise for applications
ment on the roof or trunk are monopole, design—a three-dimensional antenna—re- that will integrate terahertz
helix, and printed antennas. Mounted in quires no dedicated space on the PCB, as it components into usable
a rear or side mirror, dashboard, or glove is an independent part of the whole device. products, many are develop-
compartment, however, cellular antennas Though slightly more expensive, this lat- ing terahertz phase-noise
are less at risk to external agents. Unfor- ter antenna does boast better performance. measurement capabilities.
tunately, such placement also puts them Yet both antennas show satisfactory per- The National Institute of
closer to electronic components that may formance in the required frequency bands. Standards and Technology
impact antenna performance. At Italy’s Because they have been created with the (NIST; www.nist.gov), for ex-
Politecnico di Torino, two multiband- presence of other electronic components in ample, is working on phase-
antenna designs that seek to overcome mind, the antennas should not be affected noise measurement systems
such issues have been designed by Sergio by the presence of those components on the that support 670 GHz, 850
Arianos, Gianluca Dassano, Francesca PCB. See “Design of Multi-Frequency Com- GHz, and 1.05 THz. Re-
Vipiana, and Mario Orefice. pact Antennas for Automotive Communica- cently, the first cross-spectral
The two antennas cover four frequency tions,” IEEE Transactions On Antennas And phase-noise measurement of
bands: GSM, E-GSM, DCS, and PCS. They Propagation, Dec. 2012, p. 5604. a spectrally clean terahertz
source was presented by
NIST’s J.A. DeSalvo, A. Hati,
Architecture Cracks Terahertz C. Nelson, and D.A. Howe.
Their approach is to
Power Generation And Tuning combine even-harmonic
T
O REALIZE a complete To realize a high-power shift and frequency. mixers with a 2.5-GHz
terahertz system, a VCO at the sub-millimeter- Because of the new frequency comb. The result
challenge still remains wave and terahertz band, the architecture’s approach to is a phase-noise measure-
in the high-power, tunable signal source should be able frequency control, the trad- ment system in waveguide
signal source. When using to generate high harmonic eoff between frequency tun- (WR1.5), which is achieved
LC-resonator-based voltage- power above the device ing and power generation in by use of cross-spectral and
controlled oscillators (VCOs), fmax. The generated power conventional VCOs is largely digital phase-noise mea-
performance begins to also should be efficiently resolved. The researchers surement techniques. At 670
degrade beyond 100 GHz. delivered to the output load. fabricated two high-power GHz, an upper bound of this
While frequency multipli- Finally, a frequency-tuning terahertz VCOs in a 65-nm system’s noise floor is 20,
ers solve some of these mechanism is needed that low-power bulk process. 40, and 60 dBc/Hz at 1-,
problems, they require a will not adversely affect the According to measurements, 100-, and 10,0000-Hz offsets,
high-power external source— first two requirements. the first one provides 0.76 respectively.
something undesirable in In this approach, multiple mW output power at 290 The team also measured
a fully integrated terahertz core oscillators are coupled GHz with a 4.5% tuning a commercial, low-phase-
source. One alternative could to generate, combine, and range. The second VCO puts noise, 670-GHz source at
lie in a VCO architecture deliver their harmonic power out 0.46 mW at 320 GHz offset frequencies from 0.1
based on coupled oscillators to the output node without with a 2.6% tuning range. Hz to 1.0 MHz. See “Phase-
in a loop configuration, which using varactor diodes. Lever- See “A Novel CMOS High- Noise Measurement System
has been created by Yahya M. aging the theory of nonlinear Power Terahertz VCO Based for the Terahertz-Band,”
Tousi and Ehsan Afshari from dynamics, the researchers are on Coupled Oscillators: IEEE Transactions on Tera-
Cornell University and Omeed able to control the coupling Theory and Implementation,” hertz Science And Technol-
Momeni from the University between the cores. In doing IEEE Journal Of Solid-State ogy, Nov. 2012, p. 638.
of California at Davis. so, they can set their phase Circuits, Dec. 2012, p. 3032.

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ISO 9001 ISO 14001 AS 9100

U.S. Patents
478 rev J
7739260, 7761442
Europe
Microwaves in
Paul Whytock, European Editor
Flexible RFID Sensor Tag Could Cut Food Waste

uropean studies into global
E food wastage indicate that 40% to

50% of all food being produced for
Europe is being wasted. Surprisingly,
10% to 15% of that wastage is happening
during supply and delivery operations
to consumer retail outlets. In addition,
the food industry discards an estimat-
ed $25 billion of spoiled goods every
year. Within every home, $300 worth
of bruised fruit, bad meat, and other
perishable goods are thrown away annu-
ally. This issue has serious implications
for the global supply of adequate food
stocks. It also contributes to escalating
food costs. In a technological step for-
ward that could combat this wastage,
Europe’s CATRENE-Pasteur project here is a technology demonstrator of the catRENE-Pasteur project, which
has developed a flexible tag that can integrates an RFID chip, microcontroller, and sensor Ic into a flexible tag.
track and monitor the quality of food
in the supply chain. dioxide sensors. The sensor can operate at room temperature,
This monitoring system integrates an RF-identification which reduces power requirements. For the carbon-dioxide
(RFID) chip, microcontroller, and sensor integrated circuit sensor, the team achieved sensitivity in the 300-to-5000-ppm
(IC) into a flexible tag (see photo). The sensor IC, which will be concentration range used in food-packaging applications.
made commercially available later this year, incorporates tem- Further models for food-quality prediction are being devel-
perature, relative humidity, and light sensors. As a result, it can oped based on available sensor data. They will be translated
monitor the quality of a range of foods. into algorithms that can be implemented on the smart sensor
To perform such monitoring, the tag attaches to bulk trans- tag. In addition, technologies are being developed to reduce
portation containers. It then provides continuously updated power requirements and boost read efficiency.
data on how long the food stored in those containers will stay The first-generation (Gen1) demonstrator of the RFID-sen-
fresh. This could help food distributors minimize the amount of sor tag provides a test prototype to validate system feasibility.
food that is spoiled before it reaches the retailer. Although it is a modular test platform, the final, fully integrated
Researchers from Holst Centre and Imec played a role in inte- version will be a battery-assisted RFID tag with full sensor func-
grating the ICs into the flexible tag. This involved the creation of tionality. In addition to making accurate shelf-life predictions
low-temperature encapsulation techniques that would not dam- for specific food items, it will be able to sense a number of dif-
age the low-cost plastic substrate used in the tag. To integrate the ferent parameters, such as temperature, pH, and gas levels.
sensor IC, the team developed a process that protects most of According to the CATRENE-Pasteur project, a vast variety of
the chip, but leaves the sensing area exposed to make measure- applications will result from the successful development of a
ments. This process attaches the IC to the encapsulation mate- marketable platform. They include supply-chain uses, such as
rial using an adhesive conductive film. Using lasers, that film is traceability and quality management. In addition, domestic ap-
then machined to the required size and shape. This technique plications include the detection of hazardous gases like carbon
ensures that the sensing area remains uncontaminated. monoxide. Medical monitoring could be performed to ensure
Holst Centre and Imec also participated in the develop- therapy compliance. Applications even range to construction—
ment of additional gas sensors. Eventually, those sensors may for example, for corrosion monitoring. The CATRENE-Pasteur
be used to monitor the controlled atmosphere in which many project was funded by the governments of Austria, Belgium, the
foods are packaged. By creating ultra-thin metal-oxide films, Netherlands, and Spain. Participants include major European
they were able to enhance the sensitivity of oxygen and carbon- companies, research institutes, and universities.

the accuracy of Rubidium...
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SpecialReport
JACK BROWNE | Technical Contributor
Amplifiers
Draw Upon A Variety
Of Technologies
Many different device technologies are
eMployed for gain in rf, Microwave, and
MilliMeter-wave aMplifiers, based on required
bandwidths and output-power levels.
A
mplifier technology tends to change over time, depending on the active devices
available. Although active-device technologies have advanced a great deal over the
past 20 years—with semiconductor technologies such as gallium arsenide (GaAs)
maturing, and gallium-nitride (GaN) devices offering tremendous promise in terms
of high power levels at high frequencies—vacuum tube devices still play major roles in
RF/microwave amplification applications. A variety of technologies are employed in high-
frequency amplifiers, each with its own set of benefits and features.
Amplifiers for RF/microwave applications are available in a wide range of shapes and sizes, as well as fre-
quency ranges and power levels. This diversity stems from the many different needs for these amplifiers, from
low-noise amplification in receivers to boosting signals to high power levels in transmitters. Also factoring in
are the many additional medium-power stages in between the receiver and transmitter.
Companies such as Skyworks Solutions (www.skyworksinc.com), for example, target different applica-
tions with different sets of performance levels in their miniature low-noise amplifiers (LNAs). For use in Long-
Term-Evolution (LTE) and wideband-CDMA (W-CDMA) cellular communications infrastructure applica- DARPA has not yet
tions, the firm’s model SKY65369-11 surface-mount amplifier features a typical noise figure of just 0.9 dB from abandoned silicon
832 to 862 MHz with a 35-dB gain control range. To keep things small, it is supplied in a 16-pin MCM housing solid-state power in
measuring just 8 × 8 × 1.3 mm. For broader frequency coverage, the same company’s model SKY67015-396LF favor of GaN devices,
LNA achieves almost the same noise figure (at typically 1 dB) but covers a frequency range from 30 to 3000 as evidenced by the
MHz. Suitable for ISM-band applications, it is supplied in a similarly small housing as the model SKY65369-11 organization’s Efficient
amplifier and includes 15.5 dB fixed gain across its frequency range. Linearized All-Silicon
Certainly, no solid-state technology has shaken up the RF/microwave amplifier design world in recent Transmitter ICs (ELASTx)
years quite like gallium nitride (GaN) active devices. The number of companies now producing GaN ampli- program (see p. 40).
fiers is large and growing, due to the high power density of the technology and the interest on the part of such
customers as the Defense Advanced Research Projects Agency (DARPA). One of those GaN producers, Tri-
Quint Semiconductor (www.triquint.com), which has been working on GaN technology since 1999, recently
received a $2.7 million contract from DARPA for the nominal purpose of tripling the power-handling capabili-
ties of GaN circuits. This Near Junction Thermal Transit (NJTT) project will build on TriQuint’s GaN on silicon
carbide (SiC) technology to achieve higher RF/microwave solid-state power levels than currently available.
According to James L. Klein, TriQuint’s Vice President and General Manager for Infrastructure and De-
fense Products, “We are very pleased that DARPA selected TriQuint to develop this critical technology. Like
other programs we have supported, NJTT will set the stage for substantial MMIC performance enhancements
including reduced size, weight, and power consumption while increasing reliability and output power.”
TriQuint hopes to combine its GaN-on-SiC process technology with new thermally conductive materi-
als, thus reducing heat buildup around the active GaN devices and permitting higher output-power levels in

amplifier evolution
their GaN amplifiers and devices nology, EMPower RF (www.empowerrf.com) is selling its lines of
(see p. 48 for more on emerging GaN power amplifiers as replacements for silicon bipolar, MOS-
thermal-management materials). FET, LDMOS, and GaAs FET amplifiers. It is offering the newer
TriQuint has several partners in GaN amplifiers as smaller, lighter, and more reliable units for a
the project, including the Univer- given frequency range than any of the other solid-state amplifier
sity of Bristol (www.bris.ac.uk), types. The firm offers both GaN amplifier modules and complete
Group4Labs (www.group4labs. amplifier systems with power supplies in a rack-mount housing.
com), and Lockheed Martin As an example of the former, model BBM3K5KKO is a com-
(www.lockheedmartin.com). Tri- pact Class AB linear GaN power amplifier design capable of 100
Quint is also heading process and W minimum output power and 125 W typical output power from
manufacturing projects on GaN 1. amplifiers for satcom 500 to 2500 MHz. It provides 50-dB minimum power gain with -20
devices and amplifiers for the applications must be housed dBc typical harmonic levels and −70 dBc typical spurious levels.
United States Army, Navy, and Air in miniature, light-weight At a package size of 7.4 × 3.6 × 1.06 in., it consumes 10 A from an
Force laboratories. packages. [photo courtesy of external +28-VDC supply. It is also available as a rack-mount unit
Similarly, late last year, RF miteQ (www.miteq.com).] with the power supply inside the housing.
Micro Devices, Inc. (www.rfmd. Of course, DARPA wouldn’t enjoy its successful track record
com) received a $2.1 million con- in research without “hedging its
tract from DARPA to enhance the thermal efficiency of GaN cir- bets” and investing in a num-
cuits used in high power radar and other military systems. Also ber of different technologies for
part of DARPA’s NJTT efforts to improve the power-handling ca- high-frequency amplifiers. The
pabilities of GaN amplifiers, RFMD believes that a solution will organization still believes that
be found as a combination of its GaN-on-SiC device technology silicon technologies will support
and the use of thermally enhanced diamond substrate materi- high-frequency amplification
als. Jeff Shealy, Vice President and General Manager of RFMD’s through millimeter-wave fre-
Power Broadband business unit, said at the time of the contract’s quencies.DARPA’s Efficient Lin-
announcement that “RFMD is excited to work with DARPA to ap- earized All-Silicon Transmitter
ply new technologies to our existing portfolio of GaN-based high ICs (ELASTx) program is seeking
power RF amplifier products. We expect the NJTT program will novel approaches for increases
result in a new generation of higher performing, more compact in power amplifier efficiency,
RF high power amplifiers (HPAs) with lower operating tempera- 2. the large heat sink is re- while at the same time achiev-
ture and greater RF power-per-unit area.” quired to help dissipate heat ing improved linearity by way of
RFMD, which has been involved with GaN technology since from the power amplifier’s integrated linearization archi-
2000, is also working with Group4Labs on the contract, along with active devices. [photo cour- tectures. One of the goals of the
the Georgia Institute of Technology (www.gatech.edu), Stanford tesy of mini-Circuits (www. program is a silicon-based trans-
University (www.stanford.edu), and the Boeing Co. (www.boe- minicircuits.com).] mitter with 65% power-added
ing.com). The firm has been a strong supplier of GaN-based pow- efficiency (PAE) with low distor-
er amplifiers for cable-television (CATV) applications. tion for 64-state quadrature-amplitude-modulation (64QAM)
For those seeking an informal education on GaN technol- waveforms. The program is looking at bandwidths of 3.5 GHz at
ogy, Advantech Wireless (www.advantechwireless.com) offers 45 GHz, 5 GHz at 94 GHz, and 8 GHz at 138 GHz for these next-
an eight-page white paper on GaN amplifiers, “A new genera- generation silicon amplifiers and transmitter ICs.
tion of Gallium Nitride (GaN) based Solid State Power Amplifiers An important design goal for many applications is sufficient
for Satellite Communication,” available for free download from amplifier power for a light-weight package, especially in airborne
the firm’s website. It details how GaN amplifiers fare in satellite- applications or in satcom systems. Amplifiers for the latter, such
communications (satcom) applications when compared with as the JDMW-Series amplifiers from MITEQ (www.miteq.com),
silicon LDMOS or GaAs-based power amplifiers. The GaN am- are low-noise amplifiers (LNAs) designed to operate from 18 to 21
plifiers are claimed to be about 50% smaller than their technol- GHz with 30-dB gain in a hermetic package measuring just 1.18
ogy counterparts, with considerably less power consumption × 0.87 in. and weighing just 23 g (Fig. 1). These LNAs feature a
and less generation of heat. Advantech Wireless, which designs noise temperature of 97 K (a noise figure of only 1.25 dB) with cur-
and manufactures GaN power amplifiers through Ku-band fre- rent consumption of only 75 mA at +12 VDC. The amplifier has
quencies for commercial and military use, is currently offering its an operating temperature range of −30 to +65°C and yields +8
GaN power amplifiers as replacements for traveling-wave-tube dBm output power at 1-dB compression. The amplifiers are avail-
amplifiers (TWTAs) in satcom applications. able with numerous options, including RF input limiters and
In embracing the growing popularity of GaN amplifier tech- waveguide flanges.

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amplifier evolution
For any RF/microwave amplifier tech-

nology, delivering consistent performance
levels with high reliability is an important
goal whether the amplifier is for low-noise
or power applications. As an example,
the model ZHL-100W-13+ power ampli-
fier from Mini-Circuits (www.minicircuits.
com) is designed to withstand short-cir-
cuit and open-circuit operating conditions
even when running at full output-power
levels, but depends on a heat sink to dis-
sipate excess heat (Fig. 2). The amplifier is
also designed to be unconditionally stable
under a wide range of operating condi-
tions. The transistor amplifier is rated for
100 W typical saturated output power from
800 to 1000 MHz but is also usable from
750 to 1050 MHz. It provides 50-dB typi-
cal gain with gain flatness of typically ±1
dB from 800 to 1000 MHz. Supplied with
SMA input connectors and Type-N out-
put connectors, it draws 10 A at a typically
supply of +28 VDC. The amplifier, which
has a typical noise figure of 7 dB, achieves
+49 dBm typical output power at 1-dB
compression and +50 dBm typical output
power at 3-dB compression.
To achieve the high reliability, users are
asked to provide proper heat sinking and
heat removal from the amplifier, ensuring
that its making base-plate temperature
is +60°C to ensure proper performance.
Users can establish favorable long-term
conditions for the amplifier by supply-
ing a heat sink with thermal resistance of
0.035°C/W or better.
In spite of the excitement about GaN
technology, solid-state amplifiers have
not yet replaced RF/microwave tubes
and amplifiers based on vacuum tubes.
As noted in the report beginning on p. 86,
such amplifiers may be considerably larg-
er than solid-state amplifiers for the same
frequencies, but they are also capable
of much higher continuous-wave (CW)
and pulsed output-power levels. It is the
hope of organizations such as DARPA that
vacuum tubes may one day be replaced at
high frequencies by solid-state amplifiers
with much higher power densities than
possible today. But for now, tubes and
transistors coexist fruitfully in RF/micro-
wave applications. MWRF

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RFEssentials
Automobiles Racing
To Higher Wireless technologies are helping to boost
the convenience and safety of modern
Frequencies
automobiles by taking advantage of
ISM bands and unused frequencies.
A
UTOMOBILES AND AUTOMO peak power detector for enhanced trans-
TIVE markets represent a grow- mitter efficiency by applying open- and
ing area of opportunity for closed-loop output power control.
suppliers of high-frequency Infineon (www.infineon.com) has
components and hardware. Just look also developed a high-frequency (200-
at wireless safety products: Many new- GHz) SiGe semiconductor process for
er cars are being designed with short- automotive applications, which it uses
range sensors operating at 24 GHz and as the basis for its Radar System IC
adaptive-cruise-control (ACC) and long- (RASIC™) series of components for ap-
range forward-looking radar systems at plications in the 76 to 77 GHz range.
77 GHz. These transmitter and receiver The product line includes voltage-con-
devices rely on dependable high-fre- trolled oscillators (VCOs) and dielectric
quency integrated-circuit (IC) processes resonator oscillators (DROs) as well as
that are also competitive enough to sup- complete automotive radar transceiver
port products in a wide range of automo- 1. Model AC3 is an automotive radar functions for ACC and collision-warning
tive markets. So far, achieving reliable system working at 77 GHz that can detect applications. The devices are available
performance at 77 GHz has not been a “targets” as far as 250 m. [Photo courtesy as unpackaged bare die. For example,
hurdle for a growing number of IC manu- of TRW Automotive (www.trw.com).] the model RXN740 single-chip trans-
facturers and high-frequency companies ceiver includes all of the core functions
supporting automotive RF/microwave The PRDTX11101 SiGe radar trans- of a radar front end, such as a VCO,
applications. mitter includes an on-chip frequency transmit power amplifier, and as many
The frequency band from 76 to 77 GHz divider with output ports for frequency as four frequency mixers, as well as on-
has proven to be attractive for a number control. It can operate with a single +3.3- chip test functions. With the device, a
of automotive radar-based safety applica- VDC supply (with only 1.5-W power con- radar sensor manufacturer can produce
tions, including for adaptive cruise consumption) and support short-range (to a four-channel monostatic radar system
trol (ACC), blind-spot detection (BSD), 20 m) as well as long-range (to 200 m) for long-range (such as ACC) automo-
emergency braking, forward collision automotive radar applications at 77 GHz. tive radar applications at 76 to 77 GHz,
warning (FCW), and rear collision pro- It features low phase noise of −93 dBc/Hz taking advantage of the chip’s self-test
tection (RCP). Freescale Semiconductor offset 1 MHz from a 77-GHz carrier, and and diagnosis functions to monitor tem-
(www.freescale.com), for example, has can produce two outputs at +13 dBm and peratures and output levels. The radar
used its silicon-germanium (SiGe) BiC- 77 GHz. The IC incorporates an amplifier IC is usable across the full temperature
MOS semiconductor process as the basis circuit that maintains stable current con- range from −40 to +125°C; it has full
for its Xtrinsic brand model PRDTX11101 sumption during activation and de-ac- automotive qualification according to
VCO+Tx voltage-controlled oscillator tivation of the radar pulses to minimize Automotive Electronic Congress (AEC)
(VCO) and transmitter combination IC for thermal drift of the oscillator signal. The AEC-Q100 requirements.
77-GHz automotive ACC and long-range device has an on-chip temperature sen- TriQuint Semiconductor (www.tri-
radar applications—as well as for shorter- sor to maintain consistent performance quint.com) supports automotive radar
range applications, such as BSD and cross by monitoring device temperature and sensor designers with a variety of 77-GHz
traffic alerts. making gain adjustments, and uses a GaAs monolithic-microwave-integrated-

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511 rev org
AUTOMOTIVE RF DESIGN
circuit (MMIC) products for ACC and as far as 250 m. The firm’s cost-effective The device’s programmable channel fil-
FCW applications. The function-specific model AC100 midrange radar system op- ter enables optimum performance for
devices allow system designers to de- erates at 24 GHz and provides ACC and all possible protocols and applications.
velop customized transmit and receive FCW functionality. The high-end model Model PQJ7910, which is designed for
configurations at 77 GHz. As an example, AC1000 is a scalable 77-GHz platform operating temperatures from −40 to
model TGA4705-FC is a flip-chip low- that provides a full 360-deg. sensing ca- +105°C, is available in versions for use
noise amplifier (LNA) that is usable from pability. All three of the automotive radar from 315 to 915 MHz or 434 to 915 MHz.
72 to 80 GHz. Based on 0.13- m GaAs systems are capable of operating under The models ATA5830 and ATA5780
pseudomorphic-high-electron-mobility- all weather conditions. are transceiver and receiver ICs designed
transistor (pHEMT) technology, the am- Of course, not all opportunities for for multiband use at ISM frequencies of
plifier has nominal noise figure of 6 dB electronic devices in automotive appli- 310 to 318 MHz, 418 to 477 MHz, and
from 76 to 77 GHz and nominal gain of cations require such high frequencies. 836 to 928 MHz for a variety of wireless
23 dB from 76 to 77 GHz. The LNA chip For some time, Toshiba (www.toshiba. automotive applications. These include
measures just 2.24 × 1.27 × 0.38 mm and co.jp) has produced ICs for automotive RKE, remote start, passive entry go
operates on typical drain voltage of +2.5 remote-keyless-entry (RKE) applica- (PEG), and tire-pressure-monitoring-
VDC, typical drain current of 60 system (TPMS) applications. The
mA, and typical gate voltage devices combine receiver
of +0.18 VDC. or transceiver circuitry with
For larger signals, the a microcontroller core, en-
company’s model TGA4706- abling each device to poll
FC flip-chip medium-power multiple application channels
amplifier is designed for ap- to create a cost-effective au-
plications from 76 to 83 GHz. tomotive electronics remote
It offers 15-dB gain at 77 GHz control. The two ICs are pin-
with saturated output power compatible devices to simplify
of +14 dBm at that frequency. their reuse in one-way and
Also based on 0.13-μm GaAs two-way automotive access sys-
pHEMT technology, the chip mea- 2. The eHorizon module combines a tems. They are each supplied in a
sures 1.86 × 1.37 × 0.38 mm and runs on processor, GPS receiver, and electronic 5 × 5 mm QFN32 package and draw very
typical drain voltage of +3.5 VDC, gate map to provide a “look ahead” on a road. little current in their power-down states,
voltage of +0.2 VDC, and quiescent drain [Photo courtesy of M/A-COM Technology thereby conserving battery life.
current of 125 mA. Solutions (www.macomtech.com).] Lastly, the Advanced Driver As-
TriQuint also offers the model sist System (ADAS) eHorizon module
TGC4702-FC, a flip-chip downconvert- tions, including the model TB31372FNG from M/A-COM Technology Solutions
ing in-phase/quadrature (I/Q) mixer for receiver IC for the 315-MHz band and (www.macomtech.com) is a board-lev-
automotive radar applications. It covers the model TC32306FTG receiver IC for el automotive electronic product that
RF and local oscillator (LO) ranges of the 434-MHz band. Both chips work with functions more like an “assistant
75 to 82 GHz and an intermediate-fre- an IF of 220 kHz and feature on-chip IF driver” than an electronic aid. The mod-
quency (IF) range of DC to 100 MHz. The filters with 300-kHz bandwidth, detector ule (Fig. 2), which integrates a Global
mixer achieves RF-LO isolation of 18 dB circuits, and on-chip VCO with phase- Positioning System (GPS) receiver and
at 77 GHz with 12-dB conversion loss at locked-loop (PLL) circuitry. The RKE ICs microprocessor along with a NAVTEQ
77 GHz. The mixer chip, which measures are supplied in 24-pin SSOP housings. map, attempts to plot upcoming road
2.46 × 1.89 × 0.38 mm, is based on GaAs The model PQJ7910 variable intelli- features to improve the quality and safety
heterojunction-bipolar-transistor (HBT) gent polling receiver (ViPER) from NXP of a driver’s ride.
technology. It is rated for maximum bias Semiconductors (www.nxp.com) oper- Using the map and GPS informa-
current of 15 mA at +2 VDC bias voltage. ates within Industrial-Scientific-Medical tion, the processor works with an au-
TRW Automotive (www.trw.com), a (ISM) band frequencies to support car tomobile’s systems to save fuel, reduce
company with a long history of semicon- access and tire-pressure monitoring sys- carbon-dioxide emissions, and boost the
ductor development, offers automotive tem (TPMS) applications. The device fea- efficiency of an automobile for a given
radar solutions at both 77 and 24 GHz. tures a programmable state machine and travel route. Although high-frequency
For example, the model AC3 77-GHz a polling timer, so it can operate autono- electronics cannot yet tell the future, this
long-range radar (Fig. 1) provides out- mously while waiting for access signals is one module that certainly prepares an
standing speed resolution at distances from car keys and TPMS transmitters. automobile for what roads lie ahead. MWRF

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IndustryInsight
Handling The Heat

In RF/MW Thermal management of RF/microwave
circuits is growing more challenging as the
Circuits power densities of newer high-frequency

transistors continue to so dramatically increase.
T
hermal management of an the equipment packaging, heat sinks, and dielectric materials and conductive metals,
rf/mICroWaVe ComPonent, ambient air. the choice of PCB material is such as copper, to transfer high-frequency
circuit, or system is simply a mat- therefore key in the thermal management signals with minimal loss and distortion.
ter of removing heat from sensitive of a high-power circuit or system. Because a PCB material will expand
areas of a design that can suffer damage or Ideally, a PCB material can handle en- and contract with changing temperatures
performance degradation from the heat. ergy with a minimum amount of loss, with (caused by the heating effects of lost en-
of course, providing the right mix of ther- energy from on-circuit devices (such as ergy), the material components of a PCB
mally conductive materials to extract heat transistors) or an external source (such as are usually carefully selected. they usually
from an active source (such as a power an amplifier from another circuit) trans- have closely matched coefficient of ther-
transistor) or a thermal pathway (like a ferred without generating undue heat. a mal expansion (Cte) so that, for example,
transmission line or circuit trace) may not circuit with a high amount of energy loss a PCB’s dielectric material and copper
always be so simple. for some designs, the will transform some of the energy into conductors will expand at the same rate
addition of a component that may improve heat, and that heat must be effectively dis- (usually about 17 ppm/°C) when power is
thermal management—e.g., a heat sink sipated to ensure the reliability of the cir- applied or generated within a circuit on the
to an amplifier—may also thwart efforts cuit. an rf/microwave PCB is formed with PCB. Ideally, a PCB material has been en-
at making the design as small as gineered with dielectric and con-
possible. But any attempt to un- ductor that are closely matched
derstand the flow of heat through in the three dimensions (x, y, and
an electronic design can help im- z or width, length, and thickness)
prove the performance and reli- of the material to minimize pos-
ability of that design. for most sible stress that can occur at joints
electronic components, circuits, between the conductors and the
and systems, maintaining a design dielectric materials as they expand
at a lower operating temperature and contract.
usually translates into improved the way a circuit is designed
performance and reliability. can also contribute to its thermal
the flow of heat through a high- management. one example is
frequency circuit can involve vari- through practical application of
ous input and output connectors plated through holes (Pths) to
and/or waveguide components. dissipate heat from an active de-
most microwave components and vice. multiple Pths can provide
systems, however, are built upon thermal paths from an active heat
printed-circuit-board (PCB) ma- source—such as a power transis-
terials and rely heavily on them for tor—through a circuit’s dielectric
thermal management. heat that This photograph shows the microstructure of the high- layer or layers to a metal ground
is applied to or generated within thermal-conductivity aluminum diamond material used for plane, dissipating the heat pro-
a PCB material must flow away heat sinks and in packages for high-power RF/microwave duced by the active device.
from the PCB materials and its ac- devices, such as GaN transistors. [Photo courtesy of Nano manufacturers of rf/micro-
tive devices, then be dispersed in Materials International Corp. (www.nanomaterials-intl.com).] wave integrated circuits (ICs) in

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RoHS compliant U.S. Patent Number 6,807,407
ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 451 Rev J
thermal management
surface-mount housings typically provide dielectric constant of a PCB varies as a design intended for high long-term reli-
mounting instructions for their devices in function of temperature. This quality is ability, especially if that design must op-
terms of proper heat flow away from the defined by a material parameter known as erate at higher power levels and/or in
component and through the PCB. The the thermal coefficient of dielectric con- an operating environment at elevated
number of solder-filled PTHs, their diame- stant, usually defined in units of ppm/°C. temperatures. A wide range of PCB mate-
ters, and their density on the PCB are often Because changes in a PCB material’s di- rial products are currently available, with
specified for a particular active device to en- electric constant result in changes in an a wide range of performance parameters
sure that sufficient thermal flow is achieved RF/microwave circuit’s impedance (which including low loss and high thermal con-
through the PCB and to the ground plane, is typically maintained at 50 Ω), it is criti- ductivity. A PCB material’s MOT, while not
without also rendering a circuit board that cal to minimize temperature effects at the ultimate guideline for selecting a cir-
is unfit for manufacturing. Some surface- high frequencies (and high signal power cuit material for high-power applications,
mount IC manufacturers will go as far as levels) to minimize signal reflections at can be used as a parameter for comparison
providing measurements of the thermal mismatched impedances that can lead to among different PCB products for a poten-
resistance from the package junction to amplitude losses and phase distortions. tial application.
the PCB’s heat sink—of benefit for cir- Tightly controlled thermal coefficient of In some cases, newer RF power semi-
cuit designers desiring to incorporate the dielectric constant and CTE characteristics conductor devices, such as gallium-
thermal models in their computer-aided- are signs that a PCB material will deliver nitride-on-silicon-carbide (GaN-on-SiC)
engineering (CAE) high-frequency simula- high levels of performance (with minimal power transistors, are challenging the best
tion software. designers of “thermally responsible” cir-
A PCB material’s thermal conductivity, cuits with their extremely high power den-
which is presented in watts of power per sities. In many cases, materials with higher
meter of material per degree Kelvin (W/
Attempts to understand thermal conductivities are being sought
mK), provides some indication of its ef- the flow of heat through in place of or in addition to traditional
fectiveness in dissipating heat, since it is an electronic design PCB materials as a means of channeling
a measure of the material’s capability to heat away from these high-power-density
conduct heat. It can be used to compare
can ultimately semiconductor devices. The two-pronged
the different rates of energy loss as heat help to improve the challenge is in finding a heat spreader
through different materials. Quite simply, performance and material that has a CTE close in value to
a PCB material with high value of ther- the high-power semiconductor material,
mal conductivity enables a circuit to op-
reliability of that design. such as GaN or SiC, but also with high
erate at higher power levels with better thermal conductivity.
heat flow away from active devices than a After considerable research, work is
PCB material with lower value of thermal swings in temperature) when handling currently being done on aluminum dia-
conductivity. In a PCB material, a conduc- high power levels. mond metal-matrix-composite (MMC)
tor, such as copper, has very high value of Of course, in some extremely high- materials (see figure) with extremely high
thermal conductivity (about 400 W/mK) power applications, such as radar and thermal conductivity (500 W/mK or more)
while the PCB’s dielectric material has electronic-warfare (EW) systems, design- for efficient withdrawal of heat from GaN
very low value of thermal conductivity. ers may be facing the integration and and other high-power semiconductors in
In fact, the dielectric material serves as a thermal management of a high-power high-frequency circuits. The MMC materi-
thermal insulator. vacuum electron device such as a travel- als are typically based on a primary metal
However, the use of PTHs can help the ing-wave tube (TWT) or magnetron (see such as aluminum, copper, or silicon, and
flow and dissipation of heat from the top p. 86 for more on vacuum-tube devices). a secondary material, such as diamond or
circuit layer through the dielectric layer As described in an application note from silicon carbide. Aluminum diamond MMC
to the bottom ground layer. In addition, Communications & Power Industries materials have shown a great deal of prom-
different PCB material products can be (www.cpii.com), “Recommendations for ise in their capabilities of meeting this two-
compared by their composite thermal Cooling High-Power Microwave Devic- pronged challenge for reliable thermal
conductivity values, when comparing dif- es,” (publication AEB-31) multiple water management of high-power RF/micro-
ferent materials for high-power applica- baths are often necessary to safely transfer wave devices—either when used as heat
tions in which a goal is to minimize oper- the heat produced by these devices away sinks or as base materials in semiconduc-
ating temperature. from the devices themselves and critical tor packages. So far, commercial adoption
Controlling the temperature of a high- components within their systems. of these materials has been limited by high
frequency circuit can have a direct impact Thermal management should be a costs, but numerous suppliers are working
on circuit performance since the relative high-level priority for any high-frequency to improve their production methods. MWRF

DesignFeature
KENNETH V. PUGLIA
Principal
E x H Consulting Services,
146 Westview Dr., Westford, MA 01886;
(978) 692-4850, e-mail: kvpuglia@verizon.net.
Source Serves
FMCW
Direct-Digital-SyntheSizer
(DDS) technology can
proviDe the agility anD
frequency anD phaSe
RadaR
control neeDeD to Drive
high-performance frequency-
moDulateD-continuouS-wave
raDar SyStemS.
R
adar sensors based on frequency-modulated- converters (daCs), spurious-free-dynamic-range (sFdr) per-
continuous-wave (FMCW) methods benefit from formance, and tuning word memory capacity.3 To overcome
high-quality signal sources. To complement them, these, a number of frequency synthesizer architectures have
a frequency-agile linear-FM source with excellent been developed. specifically, a dds device in combination
spectral purity was developed using a commer- with PLL techniques offers a simplified architecture to achieve
cial direct-digital synthesizer (dds) as a refer- good frequency agility and low phase noise.
ence source for a wide-bandwidth phase-locked-loop (PLL)
frequency synthesizer. By employing a simple FMCW radar ar- Direct-digital-synthesizer
Phase digital blocks
chitecture, it was possible to evaluate a linear-frequency-mod- accumulator
ulated (LFM) source under closed-loop operational conditions. FTW fdds
Phase Angle/sine
due to their architectural simplicity, FM-based radar sys- ∑
register converter DAC
tems are among the most elementary types of radar equip-
ment.1 radar sets based on FM require a minimum number
of components compared to other radar systems and offer
fclk
ease of signal processing, owing to the narrow signal band-
width of the received information following frequency transla-
tion to baseband. 1. This simplified diagram shows the basic function blocks in the
The capability of FMCW radar systems to achieve high re- radar system's DDS signal source.
ceiver sensitivity and range resolution is directly
fout
related to the phase noise and linearity of the
fref
transmit and receive signal sources or oscillators.2 Loop
VCO
In many cases, these sources are unitary. numer- filter
ous techniques have been applied in source de-

PFD
sign to achieve good spectral purity, such as low
spurious content and low phase noise, particu- Reference
larly for sophisticated radar and signal generation fdds
Prescaler
applications. dds integrated-circuit (IC) devices DDS
Lowpass Divide
have matured in recent years and have shown a fdds fclk
filter by P
FTW
great deal of promise for radar applications.
Unfortunately, dds devices still suffer funda-
mental limitations with respect to clock frequen-
cy, the linearity available from digital-to-analog 2. In this block diagram, a DDS device is installed with a PLL feedback path.

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ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 455 rev F
fmcw radar source
Figure 1 displays a very basic struc-

ture for a DDS, with a phase accumulator, VCO
fout
angle-to-sine-wave converter, and digital- Loop
to-analog converter (DAC) graphically filter
represented. A frequency tuning word

DDS
(FTW) establishes the phase increment to
fdds Divide
be added to the phase register upon each FTW
fclk
PFD
by P
cycle of the reference clock. The output Lowpass
filter Prescaler
of the phase accumulator provides the Mfref
address for the angle-to-sine-wave con- fref
verter—basically, a lookup table—where

•M
the address is converted to the respec-
tive point of a sinusoid and subsequently
transformed from the digital domain to 3. This block diagram shows a DDS reference for a PLL frequency synthesizer.
the analyzer domain by means of the digi-
tal-to-analog converter. reference clock parameters and output frequency plan.3
Because the data points of the output waveform are repre- The output frequency of a DDS can be found from Eq. 1:
sented by digitally stored values, the DDS defines a sampled fdds = (FTW/2n)fclk (1)
data system with the attendant constraints—e.g., Nyquist sam- where:
pling, output amplitude rolloff, DAC quantization noise and fdds = the DDS output frequency;
spurious, and image and harmonic signals. In spite of these FTW = the binary frequency tuning word;
limitations, many of a DDS’ spectral limitations can be mitigat- n = the number of digital bits in the frequency tuning word
ed through the use of output filters and judicious selections of (typically 24 to 48 b); and
fclk = the clock frequency (in Hz).
Table 1: Summarizing the performance The DDS output frequency is a fraction of the clock frequen-
of a commercial DDS source. cy, with resolution that can be found by means of Eq. 2:
Parameter symbol requirement Δfdds = fclk/ 2n (2)
By way of example: For a FTW of 32 b and 1-GHz clock fre-
Frequency range f0 530 to 630 MHz
quency, the DDS output frequency resolution is 0.23 Hz. While
Frequency resolution f 1 Hz such fine frequency resolution is rarely needed, this capabil-
Phase noise l(fm) -130 dBc/Hz ity is quite useful in reducing the spurious distortion of the
(at 10 kHz)
output signal.
Spurious (max.) --- -75 dBc In addition to using them as stand-alone designs, some DDS
Switching speed --- 200 µs circuits can be enhanced via integration with PLLs. The fol-
Reference frequency fre 10 MHz lowing block diagrams illustrate two DDS/PLL configurations
Prescaler modulus P 1
which may be useful in various synthesizer applications. Figure
2 shows a DDS within the feedback loop of a PLL. A prescaler
Loop modulus (max.) M 63
divides the VCO output frequency to the clock input frequency
Loop bandwidth (approx.) BW 150 kHz range of the DDS. Meanwhile, the DDS output signal phase
(a) (b) (c)
4. The spectral purity of the commercial AD9910 DDS device is shown here at (a) 125, (b) 150, and (c) 175 MHz.

is compared to a high-spectral-quality of reduced frequency resolution.1 Using interconnections have been identified.
reference within the phase detector. A this technique, the LFM architecture The AD99106 DDS integrated circuit (IC)
phase error signal is thereby created, may be appropriate for several other provides the agile frequency capability as
which subsequently tunes the VCO to the high-spectral-quality applications. well as the low phase noise reference for
phase-locked condition. Figure 5 shows a block diagram of the offset PLL. The AD9910 features are
The output frequency based on the the linear FM frequency synthesizer, uniquely applicable to linear FM due to a
frequency reference and other DDS pa- where the constituent components and user defined, digitally controlled, digital
rameters can be found from Eq. 3:
fout = (2n/FTW)P(fref) (3)
where:
Mixers
P = the division ratio of the prescaler and
fref = the frequency of the reference
source.
In essence, the DDS operates as a
high resolution fractional frequency di-
Frequency
vider allowing the use of a high reference
frequency and reduction of the feedback
loop modulus.
Conversion
Reference 2 provides an excellent
example of the performance of this syn-
Products
thesizer architecture, with DDS perfor-
mance summarized in Table 1.
Figure 3 shows a DDS used as a high-
resolution reference source for a PLL.
This architecture takes advantage of the Features:
fine frequency resolution of a DDS along
• Mixers and Multipliers with RF/LO to 65 GHz
with its wide loop bandwidth for fast fre-
quency switching. A modest prescaler • IF frequencies to 20 GHz
High Performance
modulus—i.e., P < 100—may be used for for Upconverter applications

frequency synthesis to 10 GHz. An offset • Large Catalog offerings of Broadband,
or sum loop synthesizer architecture es- Double and Triple Balanced Designs
sentially ensures low phase noise beyond • High Dynamic Range Schottky
10 GHz (Fig. 4). and FET designs
The equation for the output frequency
• Image Rejection versions also available
may be written by inspection (as Eq. 4):
fout = (FTW/2n)MP(fref) (4) • QPSK/QAM/BiPhase/SSB Modulators
where: up to 35 GHz
M = the multiplier ratio. • Modular Frequency Up and Down
Before proceeding to the LFM syn- Block Converters/Receiver Front-Ends
thesizer architecture, it is instructive • Connectorized, Surface Mount, Waveguide,
to examine the DDS as the unique and Drop-In packages
performance determinant of the synthe-
• High Reliability/Space Qualified Models
sizer. A model AD9910 DDS from Analog
Devices (www.analog.com) was specifi- MITEQ Mixer Application notes
cally selected as the PLL reference due to can be found at:
several features and properties intrinsic www.miteq.com/mixers
to the device, as summarized in Table 2.
Principal sources of spurious signals
at the DDS output are DAC resolution
and tuning word bit truncation.4 Elimi-
nation of spurious signals due to tun-
(631) 436-7400 www.miteq.com
components@miteq.com Est. in 1969
ing word bit truncation may be accom-
plished with the attendant consequence

fmcw radar source
500 0.10 µF
fout
where:
VCO
Loop filter HMC529LP5 FTW = the frequency tun-
TMS4031
100 fout = 12.75 GHz ing word (binary);
n = the FTW resolution (32
500
500 500 0.10 µF 20 pF b);
Linear FM
frequency 100 pF 100 pF N = the feedback loop
synthesizer RF
bandpass 12.625 GHz modulus (N = 5);
500 500 filter 12.875 GHz
DDS
M = the offset loop fre-
NU ND
AD9910 125 MHz 625 MHz quency multiplier factor
175 MHz 875 MHz
USB DDS
R Double- (M = 12); and
fdds Ref. Divide balanced
PC host I/O FTW PFD X fclk = the clock frequency
by N L mixer
fclk
HPF/LPF IF (fclk = 1.00 GHz).
bandpass
fclk = 1.0 GHz HMC440QS16G (5) filter The feedback loop
PFD/counter
modulus is fixed at five
Spectrum 11.75 GHz but could be altered to
Crystek SAW VCO generator 12.25 GHz
CVCSO-914-1000
foff = 12 GHz extended synthesizer
bandwidth, although this
M = 12 feature may require use
of a switched filter bank to
5. This block diagram represents a linear FM frequency synthesizer operating at a clock frequency of reduce spurious content.
1 GHz. The clock source is a commercial SAW oscillator. The offset loop effectively
reduces the feedback loop
ramp mode of operation. In this mode, surface-acoustic-wave (SAW) oscillator modulus from 85 to 5, thereby lowering
the frequency, phase, or amplitude can was used to provide the DDS clock as the phase noise by 24.5 dB within the
be varied linearly over time. The AD9910 well as the reference for the offset loop loop bandwidth.
also features a 14-b, 1.0-GHz sample DAC local oscillator via frequency multiplica- The component elements of the loop
and clock capability which provides a tion using a step recovery diode. Under filter are specifically delineated to em-
maximum output frequency of 400 MHz linear sweep operation, the AD9910 is phasize that accurate tracking and fre-
and greater than −80 dBc spurious-free dynamically tuned from 125 to 175 MHz
dynamic range. A wide loop bandwidth using the digital ramp generator feature.
(3 MHz) is required to accurately track In accordance with the output frequency
the reference signal frequency agility equation, the offset loop and feedback
and assures phase continuous frequency modulus produce an output signal fre-
agility for modest frequency steps. quency from 12.625 to 12.875 GHz:
A low-noise, commercial 1.0-GHz fout = [(FTW/2n)N + M]fref
Table 2: Features and properties of the AD9910 DDS.

feature/ data Lfm synthesizer impact
property
(a)
Sample clock 1 GHz higher output frequency reference
Internal 1024 x 32 RAM internal frequency, phase,and/or amplitude
memory modulation
Output DAC 14 b reduced output spurious, increased SFDR
Phase 32 b fine frequency resolution
accumulator
Linear ramp 32 b linear in time AM, FM, PM capability which
generator allows users to control both rising and falling
mode slopes of ramp, upper and lower boundaries of
ramp, step size, and step dwell time
Residual phase –150 dBc/Hz offset not a limit to output phase noise (b)
noise 10 kHz from a 100-MHz 6. These plots show (a) the narrowband
output
and (b) the wideband spectra for the
I/O control serial and parallel variable control options
LMF synthesizer.

quency agility of the AD9910 can only using two-steps and 5.0-μs dwell time quency versus time may be calculated
be assured with a wideband loop; in ad- at each step-note frequency settling less using the formula of Eq. 5:1
dition, and more specifically, the loop than 1 μs. The time waveforms of Fig. 7 frequencysweeplinear(%) = (Δf/ΔF)100
damping must be greater than critical— represent the VCO control voltage under = (5.0 × 103)/(250 x 106)100 = 0.002% (5)
i.e., > 0.707—to prevent transient over- the indicated frequency agile conditions. This is extraordinary linearity perfor-
shoot and assure asymptotic settling. For the conditions specified in Fig. 7(a), mance and ensures that the radar range
Figure 6 represents the center fre- the maximum deviation from linear fre- measurement resolution is not degrad-
quency (12.75 GHz) spectral quality of
the LFM synthesizer under narrow and
Fiber Optics
wideband conditions. The phase noise
of the narrow band spectrum (−108 dBc/
Hz offset 100 kHz from the carrier) is near
the phase noise floor of the spectrum
analyzer. An estimate of the phase noise
“Are You
from the wideband spectrum indicates
phase noise measurement (−124 dBc/Hz
offset 1.0 MHz offset frequency)—which
Linked
correlates well with the phase noise esti-
mate (−128 dBc/Hz) in accordance with
refs. 2 and 5.
In”?
The dynamic closed-loop response
of the LFM synthesizer is indicated in
Features:
Fig. 7 for two ramp generator configura- • Analog RF over
tions: (a) a total sweep of 250 MHz using Fiber Transmitters, Receivers, and
50,000 steps of 5.0 kHz and 4-ns dwell Complete Links
time; (b) 10-MHz frequency deviation
• Operating BW’s
up to 20 GHz
• Low Noise Figure
• Wide Dynamic Range in excess of 100 dB
• Available Wavelengths of 1550/1310/1490 nm
• No external controls circuits required
• Operational status monitor pins
Microwave
(a)
• Packages from small hermetic modules
to outdoor and rack enclosures
MITEQ Fiber Optic Application notes
can be found at: www.miteq.com/fiberoptics
(b)
7. The dynamic response of the LFM syn-

thesizer is shown for (a) a 250-MHz sweep (631) 436-7400 www.miteq.com
in 50-kHz steps at a 4-ns dwell time and components@miteq.com Est. in 1969
for (b) 10-MHz steps with 5-μs dwell time.

fmcw radar source
ed due to spectral
LFM synthesizer
spread following
signal processing.1
USB
The effective- PC host I/O
ness of the DDS
Cable delay
based LFM synthe- (150 ns in 100 ft.)
sizer as a transmit-
ter and receiver
L
local oscillator FFT analyzer X R
source for FMCW
radar may be de- Double-
SRS650 amplifier
termined with the balanced
mixer
closed-loop equip-
ment configuration 8. The test system for closed-loop evaluation of the LFM
of Fig. 8, where the synthesizer employed a Fast Fourier Transform (FFT) analyzer.
LFM synthesizer
output provides the local oscillator drive signal spectrum. The lower signal level in
signal for a double-balanced mixer as the IF spectrum of the E8257D indicates
well as a received signal. The received that signal energy is distributed to adja-
signal is delayed via 100 ft. of RG-141 cent frequency bins of the spectrum.
semirigid cable.7 Although the test methodology is
The IF at the mixer output can be cal- somewhat subjective, the results provide
culated by Eq. 6: credible evidence of the quality and suit-
fif = (ΔF/ΔT)τd = 3.625 kHz (6) ability of the LFM synthesizer to function
The equipment produces an IF sig- effectively as a source for FMCW radar,
nal proportional to the ramp rate and as well as other frequency agile applica-
the time delay associated with the cable.
The output signal is spectrally resolved
to qualitatively determine the linearity
and, possibly, the phase noise. The re-
sults of the closed-loop test are shown in
Fig. 8. Test parameters, collected from a
Hamming window analysis, include fre-
quency deviation of 250 MHz, scan time
of 0.010 s, sample rate of 1 MSamples/s,
FFT length of 10,000 points, frequency
resolution of 100 Hz, range resolution of (a)
83 Hz/m, and cable delay of 145 ns.
Figure 8(a) represents the IF spec-
trum of the LFM source and Fig. 8(b) is
the IF spectrum following substitution of
the model E8257D8 signal generator as
the source for the closed-loop test. Close
examination of Fig. 8 reveals higher sig-
nal-to-noise ratio and narrower spectral
width of the LFM synthesizer IF spec-
trum. The closed-loop equipment func- (b)
tions as an FM discriminator. Therefore, 9. The LFM synthesizer performance
the broader spectral width of the IF sig- is plotted here for a Δf of 25 MHz and a
nal using the E8257D signal generator ΔT of 10 ms for (a) the LFM source and (b)
is indicative of higher residual FM noise a commercial signal generator, a model
and/or degraded linearity, since both E8257D from Agilent Technologies
conditions will extend the width of the IF (www.agilent.com).

www.analog.com. IEEE Proceeding-F, Vol. 139, No. 5, October 1992,
7. D. Scherer, “Design Principles and Test Methods pp. 343-350.
for Low Noise RF and Microwave Sources,” J. Figueras Ventura and H. Russchenberg,
Hewlett-Packard RF and Microwave Measurement “Improvement of the Performance of FM-CW
Symposium, October, 1978. Radar Systems by using Direct Digital Synthesizers:
Comparison with Voltage Controlled Oscillators,”
available for download via IEEE Explore (www.
FOR ADDITIONAL READING ieeexplore.ieee.org).
H.D. Griffiths, “New Ideas in FM Radar,” Electronics D. Morgan, P.D.L. Beasley, K.E. Ball, and W.P. Jones,
and Communication Engineering Journal, October “Exploitation of direct digital synthesis for sweep
1990, pp. 185-194. generation in FMCW radar,” ARMMS Conference,
A.G. Stove, “Linear FMCW Radar Techniques,” November, 7-8, 2005, Newport Pagnell, England.
10. The RF section of the LFM synthesizer
Control Products
occupies only 4 x 4 in. in this assembly.
tions.7 Figure 9 offers a view of the RF

section of the LFM synthesizer, revealing
the use of discrete and surface-mount
components. Support electronics, power
supply conditioning, and control inter-
face/functions are integrated on the low- Microwave
Control
er surface (not shown). Isolation walls
and energetic grounding techniques are
clearly illustrated and required to reduce
Products
spurious signals. The source features
low-loss microstrip line fabricated on
RO4350 circuit substrate material from
Rogers Corp. (www.rogerscorp.com). Features:
The RF section of the synthesizer is ap-
• Pin Diode Switches operating
proximately 4.0 × 4.0 × 0.5 in. (Fig. 10).
To ensure adequate coupling and isola- from 500 MHz to 40 GHz
tion, attempts were not made to reduce • Low Loss - High Isolation
the size of the synthesizer. MWRF • Reflective or Absorptive
ACKNOWLEDGMENTS
• SPST-SP10T Standard Products
The work reported within the article was conducted
by the author while employed at M/A-COM in
2008. The author acknowledges the diligence of • Pin Diode Phase Shifters-Analog or Digital
Scott Crawford and Chris Monroy in assembly,
breadboard, and measurement tasks, as well as • Pin Diode Attenuators-Analog or Digital
Bert Henderson (from M/A-COM in San Jose, CA
and formerly of Watkins-Johnson Co.) for analysis,
design, and prototypes of the X-band filters.
• Hermetic packaging available
The author acknowledges and appreciates the on most products
generous and timely support of Hittite Microwave
Corp. (Chelmsform, MA; www.hittite.com); rapid
acquisition of MMIC devices and evaluation MITEQ Microwave Control Product
boards was significant in validation of the LFM
synthesizer architecture and management of an
Application notes can be found at:
Microwave
aggressive program schedule. www.miteq.com/microwavecontrolproducts

REFERENCES
1. Kenneth V. Puglia, “Technical Memorandum:
FMCW Radar Primer,” M/A-COM GmbH,
Schweinfurt, Germany; August 1995.
2. Keneth V. Puglia, “Technical Memorandum:
Transmitter FM Noise and Frequency Sweep
Nonlinearity in FMCW Radar,” M/A-COM, GmbH,
Schweinfurt, Germany, July, 1995.
3. “Technical Tutorial on Digital Signal Synthesis,”
Analog Devices, Inc., 1999, www.analog.com.
4. Ulrich L. Rohde and Ajay Kumar Poddar, “VCSO
Technology Silences Synthesizers,” Microwaves &
RF, Vol. 50, No. 2, February, 2011.
5. Kenneth V. Puglia, “Oscillator Phase Noise:
(631) 436-7400 www.miteq.com
Theory and Prediction,” Microwave Journal, Vol. components@miteq.com Est. in 1969
50, No. 9, September, 2007, pp. 178-194.
6. Analog Devices, AD9910 data sheet,

DesignFeature
DR. JOHN HOWARD
President and Chief Executive Officer
Electromagnetic Technologies Industries, Inc.,
50 Intervale Rd., Boonton, NJ 07005; (973) 394-1719, FAX: (973) 394-1710,
www.etiworld.com.
Phased-Array Antennas Aid

Wireless Communications
The use of hardware-based NIMO techniques can improve the
performance and increase the coverage area of a wireless
communications system, especially in densely populated areas.
W
ireless systems overcome a number of different munications systems, including third-generation (3G) cellular,
limitations to provide reliable coverage, including long term evolution (lte), and WimAX systems. in a 3G system,
limited available frequency bandwidth and efficient if each of three or six sectors employs the same band (Fig. 2), the
use of the available bandwidth. this efficiency can system will suffer a reduction of codes per sector.
be boosted by using higher modulation rates, more sensitive re- Fortunately, wireless non-interfering multiple-output (NimO)
ceivers, and more accurate bit error detection/correction meth- systems can overcome the bandwidth and capacity limita-
ods. Nevertheless, wireless telecommunication systems must still tions in densely populated areas, and even multipath problems.
comply with the bandwidth or spectrum limitations established these systems, as designed and manufactured by eti, com-
by governing authorities. And once bandwidth is used in one bine beamforming techniques with multiple-input, multiple-
area, the bandwidth is not available for other systems. output (mimO) architectures to provide higher quality of ser-
Because of this, current wireless communications technolo- vice (Qos) than systems based on conventional beamforming
gies an be limited in terms of data and user capacities. For ex- methods. NimO strategies can provide multiple narrow beams
ample, a typical Gsm cell site divides 360 deg. of coverage into from a single antenna, enabling improved efficiency, user capac-
three sectors with three frequency channels (Fig. 1). Within a ity, and throughput.
sparsely populated area this may be acceptable; however, net- the two types of mimO currently employed in wireless sys-
works covering dense urban areas often require hundreds of such tems are mimO matrix A and mimO matrix B. Both use more
cell sites. such a large number of sites incur high costs associated than one antenna to minimize signal fading. the antennas can be
with the cell equipment, site management, and site rental. in ad- placed within a single mechanical structure or exist as separate
dition, with every new site, rF planning becomes more complex. mechanical structures. radios that transmit and receive signals
these same difficulties and high costs impact all wireless com- in these wireless systems can typically select between mimO ma-
90°
trix A and mimO ma-
105° 90° 105° 75°
75° trix B. mimO matrix
120° 60° 120° 60°
A uses two or more
135° F1 45° 135° F1 45°
distinct paths with
150° 30° 150° 30° the same informa-
tion transmitted to a
165° 15° 165° 15°
subscriber and back
0 0
–10
–20
–10
–20 (Fig. 3). if fading or
±180° 0° ±180° 0°
multipath affects
F2 F1
–15°
one path, at least one
–165° F3 –15° –165° F1
other path is avail-
–150° –30° –150° –30° able as a backup. A
receiver will be de-
–135° –45° –135° –45°
signed to distinguish
–60° –120° –60°
–120° or combine two (or
–105° –75° –105° –75°
–90° –90°
more) signal paths as
1. A typical cellular communications site used three 2. A typical 3G cell site repeats the same frequency needed to overcome
different frequency channels. in three channels the fading or mul-

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PHASED-ARRAY ANTENNAS
MIMO Matrix A MIMO Matrix B
Data stream A
The processing requirements
Data stream A
for software-based beamform-
ing can be sophisticated and
resource-intensive, depending
on the complexity of the chan-
Data stream B Data stream B
nel (environment) and the num-
ber of subscribers connected on
the system. Implementation of
software-based beamforming ap-
proaches can result in delays of 5
to 10 ms. Such delays are not an
3. In the MIMO Matrix A approach, both data 4. In the MIMO Matrix B approach, data stream issue with NIMO systems.
streams A and B carry the same signals. A carries different data than data stream B. NIMO provides multiple si-
multaneous narrow beams (Fig.
tipath effects. In a MIMO Matrix B approach, two (or more) dis- 5) using a single phased array antenna and provides improved
tinct signal paths carry different signals over the same frequency characteristics compared to conventional beamforming tech-
band (Fig. 4). In this method, twice as much data can be transmit- niques. As many as 48 beams may be employed in a 360-deg.
ted, increasing the efficiency of the link. The signals are received angle; for mobile systems as many as 12 beams is recommended.
at different times or with sufficiently different directions of arrival Compared to traditional MIMO systems, NIMO methods offer
to differentiate them. numerous advantages, including high antenna gain, long com-
Beamforming techniques create a narrow beam from a high- munication distances, and reduction in implementation costs
gain, phased-array antenna to link a subscriber and base station. compared to other approaches. The main disadvantage of NIMO
Of the two types of beamformers, one uses software to mathemat- is the lack of an adaptive phased-array antenna scheme. (Fig. 6)
ically construct the beam and the second, NIMO, employs hard- To overcome the limitations of modern wireless communi-
ware for the same effects. cation systems, equipment manufacturers have devised various
Beamforming can generally increase the power of a signal in equipment improvements. Phased-array antenna subsystems
the direction in which it is transmitted. For reception, it can in- are employed for some of these techniques. While increasing the
crease receiver sensitivity in the direction of desired signals and modulation rate can increase data speeds per customer, there are
decrease sensitivity in the direction of interference and noise. In limits to the distances over which higher modulation rates can be
these ways, beamforming can provide longer communications used.5 Fortunately, hardware-based NIMO techniques can pro-
distances and wider coverage areas. With NIMO, a greater num- vide significant advantages compared to software-based beam-
ber of subscribers can be reached with higher data rates. forming approaches. MWRF
90°
REFERENCES
105° 75°
1. Electromagnetic Technologies Industries, Inc., white paper, “Simply Years
120° F3 F1 60°
Ahead,” 2009, www.etiworld.com.
F2 F2 2. Motorola, white paper, “A Practical Guide to WiMAX Antennas: MIMO and
135° 45°
F1 F3 Beamforming Technical Overview,” Motorola, Libertyville, IL, www.motorola.com.
3. Electromagnetic Technologies Industries, Inc., white paper, “ETI Multibeam/
F1 Bandwidth for Free,” 2010, www.etiworld.com.
150° F3 30°
4. Constantine A. Balanis, Antenna Theory, 3rd Ed., Wiley, New York, 2005.
5. Terry Norman, “WiMAX vendor consolidation continues as Cisco withdraws
F2 F2 from the market, Analysis Mason, March 2010, www.analysysmason.com.
165° 15°
F1 F3
+180° 0°
24 dB
F3 F1 27 dB
–165° –15°
F2 F2 F1 F2
F2
–150° F1 F3 –30°
F3 F1
–135° –45°
F2 F2
F1 F3
–120° –60°
–105° –75°
–90°
5. This is a graphic depiction of a NIMO system with 24 beams 6. This is a graphical representation of a NIMO system with two
and 3 frequency channels: F1, F2, and F3. channels: F1 and F2.

DesignFeature
SAABRA DEEN
Design Engineer
Osctek Ltd., Harrow, Middlesex, United Kingdom;
+44 (0) 2084207043, e-mail: saabradeen@yahoo.com, www.osctek.com.
Optimize Varactor-
Tuned Oscillators
This simple model helps to understand the tuning sensitivity and linearity
of a varactor diode for more predictable and precise tuning of oscillators
at millimeter-wave frequencies.
M
illimeter-wave frequency bands are attrac- a varactor diode is essentially an active device with positive-
tive for their wide available bandwidths. Tere are negative (Pn) junction which has reverse bias applied. this re-
a number of ways to generate these signals but, sults in a movement of charge carried away from the junction,
for each type of oscillator, it is desirable to be able so that this region is referred to as the depletion layer. the de-
to tune the source electronically, as well as in a defined, con- pletion layer has charge on either side of the junction and acts
trolled, and consistent manner. By using a suitable reactive de- like a parallel-plate capacitor. the capacitance relationship for
vice (such as a varactor diode) for tuning these millimeter-wave a parallel-plate capacitor is c = εa/w, where:
oscillators, the relationship between an applied voltage and
the resulting frequency can be precisely defined. Tis can aid a = the effective cross-sectional area of the device,
the design engineer in achieving the required spectral perfor- ε = the relative dielectric constant of the depletion layer, and
mance at these higher frequencies. w = the width of the depletion layer.
Oscillators developed for use at millimeter-wave frequencies
are typically designed around waveguide housings. electronic application of a voltage results in an increase of the deple-
tuning of a waveguide-type oscillator can be accomplished in tion layer width, effectively altering the capacitance.
a number of ways. additional information can be found in the the typical fabrication process for a varactor diode results in
technical literature (ref. 1) and in a recent article (ref. 2). the a device with a mesa structure. this device can be mounted in a
tuning sensitivity of a millimeter-wave varactor-tuned oscilla- number of different standard and custom housings to simplify
tor (vtO) can be estimated by means of relatively simple mod- handling. the junction capacitance and associated parasitic
els, and this article hopes to provide some sights into the tuning circuit elements can be included in a simple equivalent circuit
relationship. usually, the approach is to keep the fixed capacity for modeling and simulation purposes.
with the varactor diode as large as possible, using the varactor the selection of a suitable semiconductor device for a varac-
diode to control the resonant frequency to the greatest extent.
Frequency
counter
15
14
13
12 Spectrum
11 analyzer
Arbitrary frequency
10 0.50 DC power
9 1.00 supply
8 1.50 + Ð
Mixer
7 2.00
6 Power meter
5
4 Tune
3
2 Power
Earth
1 Isolator head
(ground) Coupler
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Oscillator
Varactor voltage under test
1. Frequency variations can occur due to variations in varactor 2. This block diagram shows the instruments needed for the VCO
diode voltage. test system.

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MON day
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ns g in , cal
ap
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, se b sales o
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i n i c i rc u
its.com/30day
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U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 488 rev N
optimize varactor oscillators
tor diode can make an impact Gunn oscillator to compare

on the performance of the di- 0.5 gamma—GHz 0.5 gamma—dBm performance levels.
1.0 gamma—GHz 1.0 gamma—dBm
ode, although this receives 1.25 gamma—GHz 1.25 gamma—dBm Each varactor/oscillator
little coverage in the literature. combination was evaluated
93.0 +18
Varactors are true diodes with with a test system that includ-
92.8 +17
a clearly defined junction, +16
ed a DC power supply for tun-
92.6
which can be characterized by +15
ing the varactors (Fig. 2). The
Frequency—GHz
92.4
Power—dBm
means of a particular doping +14
output of the Gunn oscillator
92.2
profile; this is effectively cap- in each case was monitored
92.0 +13
tured in the gamma param- 91.8
with the aid of high-frequency
+12
eter for each varactor diode. +11
test instruments that included
91.6
The gamma parameter can 91.4 +10
a frequency counter, spectrum
be placed in two categories: 91.2 +9
analyzer, and power meter. A
abrupt and hyperabrupt. Quite 91.0 +8 frequency mixer was used to
simply, a varactor diode is ef- 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 translate the Gunn oscillator's
fectively a variable reactance Varactor voltage—V outputs to frequencies within
which is a function of some ap- 3. These curves show the changes in frequency for different range of the test equipment.
plied DC tuning voltage. More applied varactor voltages. Although the varactor pack-
detailed models of varactor age type was the same in each
diodes are available in the literature, between frequency and voltage: case, each device package had its own
which are useful for a specific package or subtle differences in dimensions as well
unpackaged devices. To obtain a general F = K/[k(V)Γ → ≈ VΓ/2 as in internal construction, with ramifi-
understanding of a varactor diode’s be- cations at the higher frequencies. Differ-
havior, it would be reasonable to ignore in which the importance of the varactor ence between sources can occur because
packaging and parasitic affects in the material’s doping profile can be clearly of variations in reactance and skin effect
first instance, as this allows the designer seen on both sides of the equation. due to fringing fields, the lengths of cur-
to appreciate the merits of such devices. This very simplistic approach pro- rent paths, and various parasitic effects.
This basic approach leads to the fol- vides a basic relationship between fre- No serious efforts were made to optimize
lowing expression: quency and the applied voltage, with Γ the circuit, particularly for power. Mea-
representing a doping constant, equal to sured performance is shown in Fig. 3.
Cv + kV−Γ (1) 0.5 for an abrupt diode and 1.0 or 1.25 for The crude model and measured data
a hyperabrupt diode: demonstrate that the tuning sensitivity
where: (and thus, linearity) can be influenced
Γ = 0.5 → F ≈ V0.25 significantly by the selection of a suitable
V = control voltage; Γ = 1.0 → F ≈ V 0.50 varactor diode. This also opens the pos-
k = a constant; Γ = 2.0 → F ≈ V sibility of tailoring the doping profile of
Cv = varactor capacitance; and the varactor diode to achieve a specific
Γ = the gamma or doping profile. In reality, it is difficult to achieve a tuning sensitivity; this could be achieved
practical diode capable of Γ = 2.0, al- during the semiconductor fabrication
For the case where the circuit capaci- though devices with values equal to 1.0 process. However, in practice, linear
tance is much greater than the varactor and 1.25 are commercially available. tuning must take into account circuit
capacitance, or if Cd << Cv: A more detailed analysis3 of a varac- and oscillator characteristics as well as
tor’s influence on frequency tuning can the varactor diode. MWRF
0.5
F ≈ (L/Cv) → F = K/(Cv) 0.5 (2) be complicated. This is due to the issues
of the varactor construction and device RefeRences
where: to device variation, as can be seen in Fig. 1. Jack Holzman and D. Robertson, Solid-State
1. Package assembly and parasitic circuit Microwave Power Oscillator Design, Artech
House, Norwood, 1992, www.artechhouse.com.
F = the resonant frequency; elements can have profound effects at 2. S. Deen, “Designing Compact V/W-Band Gunn
Sources, MicroWaves & RF, April, 2011, p. 82.
L = the circuit inductance; and high frequencies in particular the type 3. Joseph F. White, Semiconductor Control, Artech
K= a constant. and shape of the internal bond wires. For House, Norwood, 1978, www.artechhouse.com.
4. David M. Pozar, Microwave Engineering, 2nd
this analysis, a number of commercially ed., Wiley, New York, 1998.
Combining Eqs. 1 and 2 yields an ex- available packaged varactor diodes were 5. G.S. Hobson, The Gunn Effect, Clarendon Press,
Oxford, England, 1974.
pression that represents a relatonship procured and installed into a W-band 6. J.S. Panesar, private communication.

4 GHz with 4 Outputs Ideal for Next Generation MIMO Applications
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 Low Noise Floor: -165 dBc/Hz
 4 Single-Ended or 2 Differential Outputs
Closed Loop Fractional Phase Noise Fractional Spurious Performance at 2646.96 MHz,
at 3600 MHz, Divided by 1 to 62 with Exact Frequency Mode ON or OFF
Closed Loop Open Loop VCO RMS Jitter Integrated PN

Part Frequency Pout
Function SSB Phase Noise Phase Noise Fractional Fractional Mode
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45 - 1050
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RF VCO ( +3.3V) @ 2 GHz @ 2 GHz @ 2 GHz
HMC833LP6GE 25 - 6000 -4 159
45 - 1050 5
1400 - 2100 Wideband -108 dBc/Hz -134 dBc/Hz 2 0.23
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978-250-3343 tel • 978-250-3373 fax Visit Us: www.hittite.com
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DesignFeature
ROY MONZELLO
RF/Microwave Design Engineer
E-mail: roy.monzello@gmail.com
Measure Noise Without

A Calibrated Source
This new technique is based on a variation of the Y-factor
method to achieve accurate noise-figure measurements
without the need for a calibrated noise source.
M
anual noise-figure measurements are often
Noise source Noiseless DUT
necessary when automated measurement systems Gain = G Y=
(Noise power, hot)/
(Noise power, cold)
are not available. one of the more popular tech-
niques for making noise-figure measurements is the DUT
Y-factor method, which is accomplished with the aid of a hot/ TH, TC
Te
cold noise source to provide two different noise power levels (for
(Effective input noise temperature)
this article, cold will be assumed at 290K). The difference between
the two noise power levels is the excess noise ratio (enr), which
is given numerically by (TH − TC)/TC, where TH represents the hot 1. This basic circuit is used to evaluate the Y-factor of a
temperature and TC is the cold temperature. under true imped- DUT when using a calibrated noise source.
ance-matched conditions, the actual available noise power would
be equal to kTB, where k is Boltzmann’s constant (1.3806503 × The resistor at the input of the DuT, Te, represents a ficti-
10−23 m2kg/s2K), T is the temperature (in degrees Kelvin) or s/B tious resistor at a temperature of Te K that, when multiplied
(in Kelvin), and B is the bandwidth of the circuit under test. by the gain of the DuT, would produce the proper amount
The Y-factor is the ratio of output noise power from a device of noise at its output corresponding to its internally gener-
under test (DuT) with the noise source set to hot, divided by the ated noise. The input noise temperature is related to the noise
output noise power with the noise source set to cold. using the figure by eq. 2:
Y-factor approach, the noise figure of a DuT can be calculated by
using eq. 1: Te = 290(nfac − 1) (2)
noise figure of DuT = 10log10[enr/(Y − 1)] (1) where nfac, the noise factor, is the numerical value of the noise
figure—e.g., nfac = 10[(noise figure)/10].
where enr is the numerical ratio of the enr in dB, or enr = as shown in Fig. 1, the standard circuit for a noise figure mea-
10(enr/10). The enr is defined as (TH − 290)/290. Figure 1 shows a surement is simple and can provide an accurate measurement
typical setup for measuring the Y-factor. The resistor in the noise of the DuT’s noise figure if one were able to accurately measure
source is a fictitious component with a body temperature that can the output noise power of the DuT. since an instrument must
be changed to produce different levels of output noise power. be used to make the noise power measurement at the output of
the DuT, the noise
Table 1: Noise figures measured for the spectrum analyzer, power measure-
using standard and variation Y-factor methods. ment is a com-
posite of the noise
Standard
ENR Noise Measured dY/ Y-factor power coming out
Ti dTi dENR Y-factor dY Nfac Nfig
(dB) temp. P0 (dBm) dENR method of the DuT, along
Nfig with the internal
--- 290 K -131 6017.6 noise generated
by the measuring
15.30 10116.5 K -126.9 15467.7 9450.1 32.59 2.57 --- --- --- --- 13.34 device (for manual
20.15 30309.1 K -123.3 35434.5 19966.8 68.85 5.89 3.32 0.048 20.75 13.17 13.26 measurements, the

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noise figure measurements
measuring instrument is usu- Noise source with the analyzer. One impor-
ally a spectrum analyzer). tant difference is that results
Spectrum analyzers usually DUT
Spectrum with the new method are ob-
analyzer
have a large noise figure in the tained by means of the deriva-
TH, TC
20-to-30 dB range or, for more tive of the Y-factor. Measure-
Source noise connected
sophisticated instruments with directly to DUT ments are independent of the
an internal preamplifier, the absolute value of the input ex-
noise figure may be reduced 2. A spectrum analyzer can also be used for measuring the cess noise level to the DUT and
to the 10-to-15 dB range. The noise figure of a DUT. eliminate the need for a cali-
typical procedure for making a brated noise source.
noise-figure measurement is to first mea- Total noise factor of the DUT plus the The new method begins with the
sure the noise figure of the spectrum ana- spectrum analyzer: standard equation for the noise factor of
lyzer by placing the noise source directly NFacTOTAL = ENR/(YTOTAL – 1) (4) a DUT, given the ENR of the noise source
on the analyzer’s input port. A measure- and a Y-factor measurement as detailed
ment is then made with the DUT placed Noise factor of the DUT = NFacTOTAL − in Eq. 6:
between the noise source and the input (NFacSA – 1)/GDUT (5)
to the spectrum analyzer, as shown in Fig. NFac = ENR/(Y − 1) (6)
2. Once the two measurements have been where GDUT is the gain of the DUT.
made, the noise figure of the device is cal- The novel noise-measurement ap- Rearranging terms results in Eq. 7:
culated from the following equations: proach about to be described follows the
procedure for first characterizing the noise Y = ENR/NFac + 1 (7)
Noise factor of spectrum analyzer = figure of a spectrum analyzer, and then
ENR/(YSA – 1) = NFacSA (3) evaluating the noise of a DUT in cascade Taking the derivative of each side with
respect to the ENR yields Eq. 8:
dY/dENR = 1/NFac (8)
which leads to Eq. 9:
NFac = 1/(dY/dENR) (9)
What this shows is that the noise fac-

tor of a DUT can be determined without
knowing the absolute ENR; only the dif-
ference in ENR, which results in a dif-
ference of the Y-factor measurement, is
needed. This new noise factor approach
consists of making two Y-factor mea-
surements at two different noise power
levels at the input of the DUT. These
two Y-factor values, along with the cor-
responding source noise power values,
provide the information needed to con-
struct the ΔY and ΔENR values. These will
produce the slope or dY/dENR, producing
the noise factor result according to Eq. 9.
The method used to vary the ENR in-
volved using an arbitrary source of noise
power (e.g., a high-gain amplifier) with
its noise output level controlled by a
step attenuator. This produces a range
of ENR values based on the setting of the
step attenuator. This method does not

NOISE FIGURE MEASUREMENTS
3. A spectrum Noiseless spectrum

Uncalibrated analyzer
analyzer can also be noise source Effective input Noiseless DUT
used when measur- noise of DUT
ing the change in Spectrum

DUT
analyzer
ENR of an uncali-
TH, TC Te
brated noise source TSA
Cable,
to check the noise unknown Effective input noise
figure of a DUT. loss of spectrum analyzer,
reflected to input of DUT
require knowledge of how much noise 2. The effective input noise power of
power is being generated, nor details the DUT (related to the noise figure of the
about the attenuation characteristics of DUT); and
the step attenuator. The only purpose of 3. The effective input noise power of
the noise source/attenuator is to provide the spectrum analyzer translated to the in-
two different levels of noise power. This put of the DUT (related to the noise figure
also means that a cable with unknown of the spectrum analyzer).
loss characteristics can be used to con- This can be written as:
nect the noise source/attenuator to
the DUT without impacting the noise- Pn1 = KB(TH1 + TDUT + TSA) (A)
figure calculations.
The key to this new noise measure- and
ment approach is to determine the change
in ENR at a DUT’s input, using power Pn2 = KB(TH2 + TDUT + TSA) (B)
readings from the spectrum analyzer
translated to the input plane of the DUT. where P(p)ni is defined as the effective in-
For example, if the spectrum analyzer put noise power into the DUT for different
reads −121 dBm, and the gain between the values of hot input temperature, THi, and
input to the DUT and the input to the spec- is determined from the measurements by:
trum analyzer is 15 dB, then the translated
noise power at the input reference plane of P(p)ni = 10[(PdB MEASURED – GaindB)/10]
the DUT would be −136 dBm. The noise
temperature model of Fig. 3 shows how and where parameter GaindB represents
the internal noise power generated by the the small-signal gain (in dB) from the in-
analyzer can be translated to the input put of the DUT to the input of the spec-
reference plane of the DUT as an effective trum analyzer.
input noise temperature. The effective in- Taking the difference of the two noise
put noise power at the input to the DUT is powers, P(p)n2 – P(p)n1, yields Eq. 10:
a composite of three sources:
1. The input noise power (generated by ΔPn = KB(TH2 – TH1) → (TH2 – TH1 =
the noise source); ΔPn/KB (10)
Table 2: Noise figure of the spectrum analyzer determined

by using the difference in ENR directly from
calibrated noise source data.
ENR Noise Measured dY/
dENR Y-factor dY Nfac Nfig
linear temp. P0 (dBm) dENR
--- 290 K -131
15.30 10116.5 K -126.9 --- 2.57 --- --- --- ---
20.15 30309.1 K -123.3 69.63 5.89 3.32 0.05 20.99 13.22

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noise figure measurements
At this point, it is necessary to solve for ΔENR by means of Eq. a noise figure of 13.34 dB was measured for the ENR head with
11: 15.30 dB value. For the second calibrated noise source, with an
ENR value of 20.15 dB, the standard Y-factor method yielded a
ENR1 = (TH1 – 290)/290 spectrum analyzer noise figure of 13.26 dB. Using the new meth-
od detailed in this article yielded a noise figure of 13.17 dB for the
and two different ENR noise heads (Table 1).
The noise figure of the spectrum analyzer was also evaluated
ENR2 = (TH2 – 290)/290 → ΔENR = ENR2 – ENR1 = (TH2 – TH1)/290 by means of a method in which the difference of the two ENR
noise heads is used with the calibrated noise source data. This
and from Eq. 10, is the new method detailed in this report, in which the difference
in ENR is determined by taking the difference in the ENR values
→ ΔENR = ΔPn/(290KB) (11) of the calibrated noise sources (Table 2). The value of the spec-
trum analyzer’s noise figure from this approach, at 13.22 dB, was
Parameter dY can be calculated from Eq. 12: roughly between the values of the first measurement approach
and the result from this new approach. Additional measurements
Y1 = 10(Pn1 − Pn0)/10) were made [results available in the online version of this article
(www.mwrf.com) as Tables 3, 4, and 5] to show the effectiveness
and of the new method using a model HP 8970A noise figure test set
Y2 = 10(Pn1 − Pn0)/10) (12) from Hewlett-Packard/Agilent Technologies (www.agilent.com),
with results available for both the measurement equipment and
where Pn is in dBm and Pn0 is the noise power measured on the the amplifiers under test.
spectrum analyzer with an input noise power to the DUT of 290 K In summary, a manual noise figure test method has been pre-
(the input of DUT terminated with a matched load at 290 K): sented which eliminates the need for a calibrated noise source.
The method is as accurate as the previous Y-factor method, while
→ ΔY = Y2 – Y1 (13) eliminating the expense and calibration routine associated with a
calibrated noise source. The method allows the use of a lossy test
To evaluate the new noise figure test method, measurements cable to connect the noise source to the DUT without any need to
were made of a spectrum analyzer’s noise figure (with the pream- account for the cable’s loss in the noise figure calculations. The
plifier turned on) using two calibrated noise sources. Using the accuracy of this method will also depend upon such parameters
standard Y-factor method for the two different ENR noise heads, as measured gain accuracy and ambient room temperature. MWRF

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®
ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 508 rev org.
DesignFeature
MOHAMMAD BOD ALI FOUDAZI ALI ARAGHI
Ph.D. Candidate Research Engineer Research Engineer
mbod@aut.ac.ir foudazi@shahed.ac.ir a.araghi@shahed.ac.ir
ALI MOHAMMAD MONTAZERI MAHMOUD RAMEZANI
Research Engineer Research Engineer
montazeri@itrc.ac.ir ma.ramezani@shahed.ac.ir
Helical Antenna
Links GSM/UMTS
This compact, circularly polarized, dual-band antenna
provides sufficient bandwidth making it ideal for GSM
and UMTS base-station applications.
A
ntennas are vital to modern communications sys- times the operating wavelength. In polarization diversity, a pair
tems. But as the number of wireless services grows, the of dipole or slot antennas with ±45-deg. slant polarization is used.
number of antennas across the landscape grows, en- since these conventional schemes require a large area for instal-
couraging the design of more compact antenna struc- lation, the design of a compact, dual-band antenna is more ap-
tures and multiple-antenna solutions. to meet these needs, the plicable for use in a microcell.
authors have developed a compact, dual-band circularly polar- to reduce multipath fading effects for Bts antennas, the use
ized antenna for cellular Global system for Mobile Communica- of single circularly polarized antennas is often preferred instead
tions (GsM) systems. It consists of a pair of helical antennas with of conventional space or polarization diversity antennas. there is
the same axial coordinate. the outer helical antenna covers the no need to align a circularly polarized antenna due to the flexible
GsM 900-MHz band while the inner antenna is for GsM-1800 reciprocal orientation between the transmitter and receiver anten-
MHz and Universal Mobile telecommunications system (UMts) nas. therefore, a circularly polarized antenna can be used instead
1900-MHz use. each antenna employs a different rotation to min- of two separate antennas using space or polarization diversity.
imize mutual coupling effects and provide high isolation. although a number of dual-band GsM handset antennas have
Demands for mobile cellular communications services, in- been reported in the literature,3,4 some research was performed
cluding voice, short message service (sMs), and high-speed data, on designing GsM antennas for Bts applications with high-gain
continue to increase with the growing number of cellular com- performance. In ref. 5, for example, the feed network of a conven-
munications users. For high-capacity mobile stations (Ms), optional Bts antenna was modified to achieve a broader impedance
timum dimensioning or cell planning is needed, requiring place- bandwidth to cover the UMts 1900-MHz and GsM 1800-MHz
ment of microcells within macrocells for maximum coverage.1 bands simultaneously. However, their final antenna structure
Yet, multipath fading is one of the major problems to be over- was not able to cover the lower-frequency GsM 900-MHz band.
come in wireless cellular communications networks, and it can In ref. 6, a compact printed dipole antenna was proposed for
be alleviated through space or polarization diversity.2 dual-band GsM applications with a ±45-deg. slant polariza-
In space diversity, two receiving antennas at the base trans- tion. However, the dipole antenna exhibited low gain, making
ceiver station (Bts) are separated by a distance of minimally 10 it inappropriate for use in outdoor GsM applications.
In the current report,
a compact circular polar-
ized antenna was devel-
90
oped for both GsM and
W1
R1 deg. UMts frequency bands.
H4 H3
It consists of two axial-
W2
R2
mode helix antennas,
H2 closely mounted, with
90
H1 deg. inner and outer antenna
sections resonating at
RGnd (b)
(a) (c) 1770 to 1870 MHz and at
890 to 990 MHz, respec-
1. These different views show a (a) side view of the proposed dual-band antenna, (b) a top vide of the tively. this configura-
antenna, and (c) a photograph of the fabricated prototype used in testing. tion reduces the dimen-

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RoHS compliant
ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 459 rev J
dual-band array
0 0
GSM1 GSM2 UMTS
GSM1 GSM2 UMTS
-10
-10
-20
S12—dB
S11—dB
-15
-30
-20
Port 2 -40
Port 1
-30
0.7 0.8 0.9 1.0 1.2 1.4 1.7 1.8 1.9 2.0 2.1 2.2 2.4 0.7 0.8 0.9 1.0 1.2 1.4 1.7 1.8 1.9 2.0 2.1 2.2 2.4
Frequency—GHz Frequency—GHz
2. These are measured S11 results for the proposed dual-band 3. These are measured S12 results for the proposed dual-band
helical antenna. helical antenna.
sions of the antenna without affecting its one. As part of the design of an axial-mode sired frequency bands with good imped-
performance. The compact antenna was dual-band helical antenna, the circumfer- ance matching (S11 < −15 dB). It is desired
designed to produce stable radiation pat- ence of each of the helical antennas was that each helical antenna has negligible ef-
terns, making it a viable candidate for mi- chosen as approximately one wavelength. fects on the other antenna. For that reason,
crocellular GSM base stations as well as for The antenna parameters of each helix each of the helical antennas is employed
portable BTS use. In addition to covering should be designed to operate at its de- with different circular polarization, which
both GSM bands, itcan also cov- should result in the mutual
6
er UMTS band frequencies. coupling effects between the
Figure 1 shows the proposed antennas to be diminished.
dual-band helical antenna, with GSM1 GSM2 UMTS For good impedance
a side view in Fig. 1(a), a top view matching between the imped-
Axial Ratio—dB
in Fig. 1(b), and a look at the en- ance of the helical antenna
gineering prototype in Fig. 1(c). 3 (140 Ω) and a conventional
Simulation of the antenna was 50-Ω 7/16 coaxial connector, a
performed with the commercial 90-deg. impedance transform-
computer-aided-engineering er was used. The optimized
1
(CAE) software Ansoft HFSS Simulation parameters of the compact,
Measured
from Ansys (www.ansys.com). It 0 dual-band circularly polarized
0.7 0.8 0.9 1.0 1.2 1.4 1.7 1.8 1.9 2.0 2.1 2.2
is a three-dimensional modeling Frequency—GHz
helical antenna were as fol-
package based on electromag- lows: H1 = 6; H2 = 52; H3 = 34;
netic (EM) simulation. 4. These plots compare the simulated and measured axial ratio val- H4 = 4*52; Rgnd = 145; R1 = 23;
The antenna consists of a ues at boresight for the dual-band helical antenna.helical antenna. R2 = 50; and W1 = W2 = 18. The
pair of helical antennas with the inner helical antenna has 6.2
same axial coordinate and differ- turns while the outer helical
0 0 0
ent rotation orientation, nested 0 antenna has 4 turns. The he-
in each other. The inner helical -10
–10 –10 lical antenna wire diameter is
antenna is responsible for GSM -20
–20 –20 fixed at 3 mm. The fabricated
1800 MHz and UMTS 1900 MHz prototype of the proposed an-
using left-handed circular polar- 90 90 90 90 tenna is shown in Fig. 1(d).
ization (LHCP) while the outer Figures 3 and 4 show the
antenna is responsible for GSM measured S-parameters for
900 MHz using right-handed the proposed dual-band heli-
circular polarization (RHCP). By (a) 180 (b) 180 cal antenna. As it can be seen,
designing two helical antennas the antenna’s impedance
with the same axial coordinate, it 5. These plots show the measured radiation patterns for the matching for port 1 (the inner
was possible to achieve the per- dual-band antenna at (a) 950 MHz and (b) 1800 MHz. The blue helical antenna) is well below
formance of two separate anten- solid lines and red dashed lines represent φ = 0 and 90 deg., −10 dB in the 1700-to-2200-
nas in the physical space of only respectively. MHz frequency band allocat-

12
GSM1 GSM2 UMTS
11
950 and 1850 MHz. As can be seen, the antenna delivers stable
10 radiation patterns in both the principle plane of φ = 0 and 90 deg.
|Peak gain—dB|
at both frequencies. Figure 6 shows the peak gain results for the
9 proposed dual-band antenna. The peak gain varies slightly be-
tween 9 to 11 dB in the two separate frequency bands.
8 To calculate the coverage area for the proposed dual-band an-
tenna the Okumura-Hata-COST2317 model was used as a chan-
7 nel model. For the sake of calculating the link budget using this
antenna, a height of 40 m above the ground was assumed, with
6 a 12-deg. tilt angle with respect to horizontal. These values of tilt
0.7 0.8 0.9 1.0 1.2 1.4 1.7 1.8 1.9 2.0 2.1 2.2 2.4
Frequency—GHz
and height are common in terrestrial BTS antennas to provide
maximum achievable coverage.
6. these plots show the measured peak gains for the dual-band The link budget parameters were considered as follows. The
helical antenna in the two frequency bands of interest. receiver antenna gain and transmitted power for the mobile
station were set at 0 dB and +29 dBm, respectively. The average
ed to GSM and UMTS use. In addition, the impedance matching building height of the modeled operating environment, the mo-
of port 2 (the outer helical antenna) is well below −10 dB in the bile station height, the street width, and miscellaneous loss (in-
800-to-1000-MHz frequency band. cluding cable losses and losses within the BTS equipment) were
Figure 4 shows the simulated and measured results of the an- assumed to be 15 m, 1.8 m, 10 m, and 13 dB, respectively. Figure
tenna’s axial-ratio (AR) performance. The antenna yields good 7 shows the expected coverage area (in km) for the proposed an-
results, with AR of less than 3 dB in the frequency bands of 800 tenna at 950 and 1850 MHz.
to 1000 MHz and 1700 to 2200 MHz. Figure 5 shows the mea- In summary, a new compact dual-band dual-port helical an-
sured radiation patterns for the proposed dual-band antenna at tenna for GSM 900, GSM 1800, and UMTS 1900 MHz was pre-
sented. The antenna consists of a pair of helical nested in each
other with the same axial coordinate and different rotational
1.0 orientation. A prototype of the antenna was fabricated and the
measured results show that the antenna has good S-parameters,
0.5 -102 stable radiation patterns, and appropriate peak gain for true du-
Distance—km
-90 al-band operation. The coverage area of the proposed dual-band

0 –110
-110 circularly polarized antenna, as determined by the Okumura-Ha-
-100 ta-COST231 channel model, when the antenna is mounted on a
0.5 conventional base station, indicates that this design is suitable for
use in portable and microcellular BTS applications. MWRF
1.0
Acknowledgments
1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 This work was sponsored by the Satellite Communications Group at the Iran
(a) Distance—km Telecommunication Research Center. The authors would like to express their
great gratitude to Dr. M. Shahabadi, Associated Professor of University of
0.6 Tehran (Tehran, Iran) for his constructive advice.
0.4 RefeRences
1. G. Eason, B. Noble, and I.N. Sneddon, “On certain integrals of Lipschitz-
–102
0.2 Hankel type involving products of Bessel functions,” Phil. Transactions of the
Distance—km
Royal Society London, Vol. A247, April 1955, pp. 529-551.

–90
2. J.J.A. Lempiainen and J.K. Laiho-Steffens, “The performance of polarization
0 –110 –100 diversity schemes at a base station in small/micro cells at 1800 MHz,” IEEE
Transactions on Vehicular Technology, Vol. 47, No. 3, August 1998, pp. 1087-
1092.
0.2 3. J. Guterman, A.A. Moreira, and C. Peixerio,”Dual-band miniaturized
microstrip fractal antenna for a small GSM 1800 + UMTS mobile handset,”
0.4 Proceedings of the 12th IEEE Mediterranean Electrotechnical Conference
(MELECON 2004), Vol. 2, May 12-15, 2004, pp. 499-501.
4. G. Zhou, “A non-uniform pitch dual band helix antenna,” IEEE Antennas and
Propagation Society International Symposium, Vol. 1, 2000, pp. 274-277.
0.5 0 0.5 1.0 5. S.K. Ibrakee and J.M. Rigelsford, “A broadband antenna for GSM1800 and
(b) Distance—km UMTS BTS applications,” Proceedings of the 5th European Conference on
Antennas and Propagation (EUCAP), April 11-15, 2011, pp. 511-513.
6. K. Mohammadpour-Aghdam, S. Radiom, G. Vandenbosch, and G. Gielen, “A
7. this plot shows the coverage area of the proposed dual-band dual-band printed dipole antenna for indoor GSM-BTS applications,” European
Microwave Conference digest, Sept. 29-Oct. 1 2009, pp. 634-637.
antenna assuming a 40-m elevation and tilt angle of 12 deg. from 7. M. Hata and T. Nagatsu, “Mobile location using signal strength measurements
horizontal at (a) 950 mHz and (b) 1850 mHz. in cellular systems,” IEEE Transactions on Vehicular Technology, Vol. 29, 1980,
pp. 245-251.

ApplicationNotes
GET A HANDLE On Oscillator Phase Noise And Jitter
P
HASE NOISE GREATLY phase component of a signal changes. The industry has frequency stability; the short-
differs between com- source’s output signal. It agreed upon the “normalized term frequency instability of
modity and high-perfor- moves on to explain the frequency,” which is the cor- an oscillator in the frequency
mance crystal oscillators. Yet noise floor, emphasizing relation bandwidth for phase- domain; and the peak carrier
its impact can be significant, that the goal is to maximize noise measurements of 1 Hz. signal to the noise at a specific
as the oscillator’s phase-noise the signal and minimize the Few spectrum analyzers offset off the carrier.
characteristic dominates sys- noise for a high signal-to- have a 1-Hz resolution band- The note closes with a
tem performance. An applica- noise ratio (SNR). Noise on width. The tutorial explains discussion of jitter, which is
tion note from Crystek Corp.’s a carrier is either random or that a spectrum analyzer oscillator noise performance
Ramón Cerda, titled “Impact deterministic. While random will specify how close to the characterized in the time
of ultralow phase noise oscilla- noise spreads the carrier, carrier it can measure. For domain. It is a variation in the
tors on system performance,” deterministic noise generates measurements closer than this zero-crossing times of a signal
offers a useful tutorial on both sidebands on the carrier. minimum resolution band- or a variation in the signal pe-
phase noise and jitter. When specifying spectral width, it is possible to normal- riod. As phase noise increases
The document starts purity of an oscillator or signal ize the reading to 1 Hz. in the oscillator, so does jitter.
with a basic definition of source, one standard mea- Because a signal’s noise The note closes by explaining
phase noise—the rapid, surement bandwidth should spectrum is symmetrical that a true ultra-low-phase-
random fluctuations in the be used to make any com- around the carrier frequency, noise oscillator uses a discrete,
parisons of different oscillators it is only necessary to specify high-performance topology
Crystek Corp., meaningful. After all, when one side. The section closes with a precision packaged
12730 Commonwealth Dr., the resolution bandwidth on a by noting that phase noise crystal that has a Q greater
Fort Myers, FL 33913; (239)
561-3311, www.crystek.com. spectrum analyzer is changed, is defined in three ways: the than 70,000 for superior
the noise magnitude also characteristic randomness of close-in phase noise.
TAKE AN IN-DEPTH LOOK At IEEE 802.11ac
G
IVEN THE SUCCESS of the IEEE one spatial stream. The 80-MHz channel measurement for its mask is made using
802.11-2007 standard, the indus- comprises two adjacent, non-overlapping a 100-kHz resolution bandwidth and a
try was inspired to make wireless 40-MHz channels. The 160-MHz channel 30-kHz video bandwidth. The lowest pos-
networks perform as well as their wired may be formed by two 80-MHz channels, sible mask value will be −59 dBm/MHz. To
brethren. One result of these efforts is the which can be adjacent or non-contiguous. figure out whether the subcarriers have a
802.11ac amendment, which offers mech- Like its predecessors, IEEE 802.11ac similar amount of power, spectral flatness
anisms to increase throughput and en- uses orthogonal-frequency-division mul- can be used. The average energy of a range
hance the wireless-local-area-networking tiplexing (OFDM). OFDM utilizes equally of subcarriers is determined. The next step
(WLAN) experience. Elaborating on this spaced subcarriers to transmit data. The is to verify that no individual subcarrier’s
standard is a new white pa- number of subcarriers in energy in that range deviates by more than
per, “802.11ac Technology the IEEE 802.11ac signal the value specified.
Rohde & Schwarz,
Introduction.” Muehldorfstrasse 15, 81671 depends on the band- With the 160-MHz spectral flatness
Beginning with sections Munich, Germany, width. To make sure that specification, an 80+80-MHz transmitter
www.rohde-schwarz.com.
on IEEE 802.11ac core doc- all IEEE 802.11 devices can can transmit the two 80-MHz segments
uments and key require- synchronize to the packet, adjacent to each other for reception by a
ments, the 28-page document seeks to tru- IEEE 802.11ac sends the same preamble 160-MHz receiver. Similarly, a 160-MHz
ly provide a primer on this technology. The in each 20-MHz sub-band. Yet this results transmitter may be received by an 80+80-
main requirements for IEEE 802.11ac are in a high peak-to-average-power ratio MHz receiver. As a result, both 80+80-
backwards compatibility and co-existence (PAPR), which limits power-amplifier (PA) MHz adjacent signals and 160-MHz sig-
with IEEE 802.11a and 802.11n devices, as efficiency. The subcarriers of the upper 20- nals must be considered when deriving
well as certain performance goals for sin- MHz sub-bands are rotated to compen- the 160-MHz spectral-flatness test. The
gle-station and multi-station throughput. sate for this effect. paper offers many details and tips like
IEEE 802.11ac devices must support 20-, The white paper touches on the IEEE this to provide an excellent resource on
40-, and 80-MHz channels together with 802.11ac transmitter specification. The IEEE 802.11ac.

VVAs
Constant Impedance
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IP 3
H I G H
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Voltage Variable Attenuators ( V VAs) Mini-Circuits V VAs are enclosed in shielded

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U.S. Patents
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IF/RF MICROWAVE COMPONENTS 449 rev G
CoverStory
jack browne | Technical Contributor
1. The PXa X-Series

signal analyzers are
available with real-time
analysis bandwidths
of 85 or 160 MHz for
center frequencies from
3.6 to 50 GHz.
Real-Time
a new line of high-speed
spectrum analyzers boasts
excellent sensitivity and
analyzeRs capture bandwidths of

85 and 160 mHz.
Grab 50-GHz signals

H
igh-frequency signals without the assistance of an additional
grow more elusive with time, preamplifier. These rTsas are equipped
making the task of a spectrum to record and play back the most short-
or signal analyzer to capture term and complex modulated signals
them more challenging with each new found in modern commercial, industri-
generation of commercial and military al, and military electronics systems and
electronic systems. in response to the their components—even when those sig-
increasing agility of modern signals, the nals are designed to be difficult to detect.
PXa X-series signal analyzers with real- Of course, the term “real time” can
time spectrum analysis (rTsa) from have a variety of meanings. it is prob-
agilent Technologies (www.agilent. ably best associated with a digital sam-
com) provide a measurement range of pling oscilloscope but, as seen with the
50 ghz. Tese analyzers can record and PXa instruments, can also be applied
study a wide range of signals, from ex- to spectrum analysis. agilent offers a
tremely short and intermittent signals thorough education on what “real time”
to traditional sine waves, with a high means in terms of the company’s in-
probability of intercept (POi). struments (at http://www.agilent.com/
PXa X-series models are available about/newsroom/tmnews/background/
with real-time spectrum analysis band- real-timePXa/). in essence, a real-time
widths as high as 85 and 160 Mhz. in ad- analyzer is capable of providing calcu-
dition, they can capture low-level signals lation and acquisition speeds that are
with sensitivity of −157 dBm at 10 ghz, fast enough to deliver gap-free analysis

of measured data that has technology, for example, helps
been sampled or captured achieve a wideband-code-di-
with a data converter. In the vision-multiple-access (WCD-
case of the real-time PXA MA) adjacent-channel leakage
X-Series analyzers, the gap- ratio (ACLR) dynamic range
free analysis is extended of nominally −88 dBc when
across impressive band- evaluating WCDMA cellular
widths of 85 and 160 MHz. systems and their components.
These RTSA capabilities In terms of measurement
are available with a new pur- capability, these real-time PXA
chase of N9030A PXA signal analyzers can make zero-span
analyzer (Fig. 1), or can be as well as swept and Fast Fou-
added as upgrade options to rier Transform (FFT) mode
existing PXA signal analyz- measurements across their
ers, with the N9030AK-RT1 various frequency ranges.
upgrade supporting real- Each analyzer includes a fre-
time spectrum analysis at 2. The real-time PXA X-Series analyzers can capture a span of signals quency counter with marker
bandwidths to 85 MHz and as wide as 160 MHz at center frequencies as high as 50 GHz. resolution of 0.001 Hz. For
the N9030AK-RT2 upgrade zero-span measurements,
enabling real-time spectrum analysis at With a spurious-free dynamic range sweep times can be adjusted from 1 µs
bandwidths to 160 MHz. Analyzer mod- (SFDR) of 75 dB, each analyzer can de- to 6000 s. In addition to traditional zero-
els are available for frequency ranges tect and display extremely small signals span analysis, the PXA also offers a
spanning 3 Hz to 3.6, 8.4, 13.6, 26.5, 43, in the presence of large signals across wideband, gap-free power-versus-time
44, and 50 GHz, and can be extended to analysis bandwidths as wide as 160 MHz. display that enables users to view and
325 GHz and beyond by external mixing. The reference level for a real-time PXA measure short-duration pulses with fast
This is the first time that real-time analy- X-Series analyzer can be set from −170 to rise/fall times in the time domain. For
sis capability has been available as an +30 dBm in 0.01-dB steps in the log scale frequency spans of greater than 10 Hz,
upgradeable option to a “conventional” and from 707 pV to 7.07 V with 0.11% sweep times can be set from 1 ms to 4000
signal analyzer, such as one of the PXA (0.01 dB) resolution in the linear scale. s. Trigger delays for zero-span measure-
instruments. This offers facilities the flex- The PXA analyzers offer excellent ments can be set from −150 to 500 ms.
ibility to add the real-time measurement amplitude accuracy of ±0.19 dB for a For spans greater than 10 Hz, trigger
capability as needed. wide range of signal levels. Further- delays can be set from 0 to 500 ms, with
The real-time PXA analyzers deliver more, that 160-MHz analysis bandwidth resolution of 0.1 µs.
outstanding measurement performance (Fig. 2) brings with it exceptional ampli- Measurements can be made with
by leveraging both hardware and soft- tude performance and phase linearity to resolution bandwidths set from 1 Hz to
ware within each instrument. They minimize internal errors for vector signal 3 MHz in 10% steps, and with resolution
promise a 100% POI for signals as brief analysis as well as for real-time spec- bandwidths of 4, 5, 6, and 8 MHz. The
as 3.57 µs with full amplitude accuracy. trum analysis. The analyzers also offer bandwidth accuracies of these resolu-
Coupled with their wide analysis band- some software tools to assist with more tion-bandwidth filters is within ±1% for
widths and low noise characteristics, challenging measurements, such as the resolution bandwidths to 1 MHz; ±0.07%
these analyzers can detect and isolate noise-floor-extension (NFE) technology. for resolution bandwidths from 1.1 to 2.0
even short-term, low-level signals from The NFE functionality reduces measure- MHz; ±0.10% for resolution bandwidths
relatively noisy signal environments; this ment noise by as much as 10 dB. Using from 2.2 to 3.0 MHz; and ±0.20% for reso-
includes signals surrounded by higher- the NFE feature and a preamplifier, each lution bandwidths from 4 to 8 MHz.
level jammers and interference signals. analyzer can achieve a displayed average The analyzers are available with a
The analyzers boast internal single-side- noise level (DANL) of −172 dBm at 1 GHz. number of useful options for traditional
band (SSB) phase noise of −132 dBc/Hz The NFE technology is based on the signal analysis. For example, for facilities
offset 10 kHz from a 1-GHz carrier. They fact that 90% or more of each instru- concerned with electromagnetic-com-
also provide third-order-intermodula- ment’s contributed noise power is pre- patibility (EMC) testing, the PXA X-Se-
tion (TOI) distortion of +22 dBm at 1 GHz dictable and can be measured, calibrat- ries analyzers can be equipped with op-
as evidence of an extremely wide mea- ed, and eliminated as part of a normal tion EMC for accurate, standards-based
surement dynamic range. measurement procedure. Using the NFE electromagnetic-interference (EMI)

50-GHz real-time analyzers
measurements. The option ware applications—such as

supports Comite Interna- simulators and mathematics
tional Special des Perturba- programs—inside the analyz-
tions Radioelectriques (CIS- er. The analyzers incorporate
PR) standards for compliant GPIB and LXI/LAN ports for
EMI bandwidths of 200 Hz, automated testing with an ex-
9 kHz, 120 kHz, and 1 MHz. ternal computer, along with
Also supported are EMC two Universal Serial Bus (USB
measurements compliant to 2.0) ports on the front panel
MIL-STD-461E requirements and four on the rear panel. A
at bandwidths of 10 Hz, 100 wide range of measurement
Hz, 1 kHz, 10 kHz, 100 kHz, capabilities can be added by
and 1 MHz. means of firmware-based
The analyzers are avail- measurement applications.
able with video bandwidths Captured signals are
of 1 Hz to 3 MHz in 10% shown on a 21.4-cm high-
steps, and 4, 5, 6, and 8 MHz 3. This frequency-hopped radar signal was captured at 3.13 GHz resolution XGA display
with ±6% nominal accuracy using a 160-MHz span and a 700-kHz resolution-bandwidth filter. screen, with as many as 12
in swept measurement mode markers available to identify
and for zero-span measure- nal generators for further use in testing, different segments of a signal
ments. Optional preamplifiers can be or to mathematics or high-frequency trace. High signal quality is reinforced by
specified for 9 kHz to 3.6 GHz, 9 kHz to software simulation tools, such as the sampling circuitry that relies on an em-
8.4 GHz, 9 kHz to 13.6 GHz, 9 kHz to 26.5 Agilent High-Frequency System Simula- bedded 16-b analog-to-digital converter
GHz, 9 kHz to 43 GHz, 9 kHz to 44 GHz, tor (HFSS) software, for further analysis (ADC). The analyzers feature soft keys to
and 9 kHz to 50 GHz, with 20-dB gain to and/or reuse. Use of software tools such simplify operation, and allow operators
3.6 GHz, 35-dB gain from 3.6 to 26.5 GHz, as the PowerSuite can speed and simplify to connect a digital mouse and keyboard
and 40-dB gain from 26.5 to 50 GHz. repetitive or standards-based measure- to operate each analyzer like a personal
These high-performance signal ana- ments, such as readings of third-order- computer (PC). Each instrument incor-
lyzers include mechanical input attenu- intercept (TOI) point and harmonic dis- porates a removable central processing
ators to help boost the effect dynamic tortion. Measurement functions that are unit (CPU) to simplify upgrades, as well
measurement range. The input attenua- built within each real-time PXA analyz- as a removable solid-state memory drive.
tors cover a range of 0 to 70 dB in 2-dB er’s code, such as frequency mask trig- A VGA video output port allows connec-
steps for frequencies from 3 Hz to 50 ger (FMT), can also add to the real-time tion of an external display screen.
GHz. As an option (EA3), the analyzes analysis capabilities of the instrument: With its many measurement capabili-
can also be outfit with an electronic at- They make it possible to capture and iso- ties, each PXA X-Series analyzer can po-
tenuator with frequency range of 3 Hz to late elusive spurious signals; signals that tentially replace a number of more spe-
3.6 GHz with range of 0 to 24 dB in 1-dB are hidden in noisy environments; or cialized instruments, such as noise-figure
steps. When combined with the mechan- even frequency-hopped signals (Fig. 3). analyzers and power meters. The scal-
ical input attenuator, the total attenua- The real-time PXA analyzers also able design of these analyzers also helps
tion range is 0 to 94 dB in 1-dB steps. The work seamlessly with Agilent’s 89600 simplify performance enhancements
real-time spectrum analyzers can handle VSA software for advanced vector sig- and upgrades. P&A: $7224 (N9030AK-
maximum safe input levels to +30 dBm nal-analysis capabilities. The 89600 VSA RT1 upgrade to 85-MHz real-time band-
(1 W) with or without their optional pre- software takes advantage of the PXA’s width), $10,320 (N9030AK-RT2 upgrade
amplifier. The can work with peak pulse real-time FMT which allows capture of to 160-MHz real-time bandwidth), and
power levels as high as +50 dBm (100 W) a real-time I/Q recording or trigger other $96,304 and up (new N9030A PXA 3.6-
for pulse widths of less than 10 µs and measurements. The software also pro- GHz signal analyzer with real-time op-
less than 1% duty cycle and at least 30-dB vides connections to Agilent instruments tion to 160 MHz bandwidth). MWRF
input attenuation applied. such as vector signal generators and ar-
Every PXA includes in-phase/quadra- bitrary waveform generators to play back agilent technologies, inc., 5301 Ste-
ture (I/Q) analyzer functionality and Agi- captured signals as inputs to a device vens Creek Blvd., Santa Clara, CA 95051;
lent PowerSuite for analysis of captured under test (DUT). The analyzers are built (877) 424-4536, (408) 345-8886, FAX: (408)
signals; in addition, captured signals around an open Windows operating sys- 345-8475, e-mail: us@agilent.com, www.
can be transferred to RF/microwave sig- tem which makes it possible to run soft- agilent.com.

MMIC
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ERA
PSA
Gali,
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AVA, PMA
NFfrom 0.5 dB, IP3 to + 48 dBm, Gain 8 to 31 dB, Pout to + 30 dBm

145
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ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 476 Rev F
ProductTrends
Vacuum Devices
Drive High Vacuum electron devices are still unmatched
by solid-state devices at microwave and
Power
millimeter-wave frequencies for their
output power per device.
V
ACUUM ELECTRON de- levels from 900 kW CW and 1.3
vices such as traveling- MW pulsed output power.
wave tubes (TWTs) may Some vacuum tubes, such
be considered “archaic as magnetrons, generate rather
technologies” by some—especial- than amplify signals by applying
ly in an age of solid-state devices high-voltage energy to a series of
with ever-increasing power densi- resonant cavities. The energy fed
ties, such as gallium nitride (GaN) into the resonant cavities must
transistors. But vacuum devices be carefully controlled in terms
still play vital roles in RF, micro- of phase and level. A heated cath-
wave, and millimeter-wave appli- ode in a magnetron is the source
cations across numerous markets, of electrons. The electrons leave
including broadcast, commercial, 1. Model MT2400 is a high-power antenna-mountable the cathode and accelerate to-
industrial, and military systems. Ku-band amplifier based on a TWT active device. [Photo wards the magnetron’s anode
When the need arises for very high courtesy of MCL, Inc., a MITEQ Company (www.mcl.com).] due to the magnetic field result-
power density at high frequen- ing from the applied voltage. The
cies, solid-state technology still doesn’t fers high-throughput-satellite (HTS) ser- frequency of the electrons is affected by
come close to the capabilities of vacuum vices for both continuous-wave (CW) and the effects of their traveling through the
electron devices like TWTs, klystrons, pulsed applications from UHF through resonant cavities.
and magnetrons. Ka-band frequencies. As an example, the For some radars, frequency-agile
For commercial use, satellite-com- firm’s model VKU-7891 TWTA provides magnetrons (which are available from
munications (satcom) systems employ 40-dB gain and 3 kW CW output power CPI in various forms) can help improve
a large number of high-frequency vac- from 14.0 to 14.5 GHz while operating the system’s capabilities to detect targets
uum electron devices because of their with 11 kV beam voltage and 1.1 A beam in environments plagued by a great deal
needs for such high power densities to current. CPI recently received an order of signal clutter, such as other sources
send high-power signals across great for more than $6 million for Ka-band of RF/microwave energy. Increasing the
distances. But the high power densities high-power satcom amplifiers for HTS pulse-to-pulse frequency spacing can in-
afforded by vacuum tube devices are services. Late last year, the company also crease the detection capability of a radar
also essential to research applications in received orders from a US military prime system, although the magnetron must be
nuclear science; medical electronic sys- contractor in excess of $5 million for both capable of turning on and off relatively
tems; air-traffic-control (ATC) systems; solid-state and vacuum-electron-device short pulses. A number of different types
and military and commercial systems. amplifiers, including the company’s Su- of frequency-agile magnetrons are avail-
One of the largest groups of vacuum- perLinear® high-power Ka-band satcom able, including dither magnetrons with
tube-based solutions is based on TWT TWTAs. Since 1977, the company has output frequency that varies periodi-
technology and traveling-wave-tube- also delivered in excess of 130 gyrotrons cally with a constant excursion and fixed
amplifier (TWTA) devices. and produced more than 16 experimental center frequency.
For example, Communications & vehicles; these range in frequency from In contrast, some magnetrons, such as
Power Industries (CPI; www.cpii.com) of- 8 to 250 GHz, featuring output power beacon magnetrons developed for use in

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high-power vacuum tubes
radar transponders, must be fairly small. MCL, Inc., a MITEQ Company (www. (SNG) applications (Fig. 1). This tube
This type of microwave vacuum electron mcl.com) has long supplied compact amplifier is supplied in a light-weight,
tube produces about 5 W output power and reliable TWTA products for satcom weather-resistant package measuring
and weighs less than 8 oz. It must be fre- applications, including the recent de- 8.9 × 8.12 × 17.3 in. (226 × 206 × 440 mm)
quency stable without additional elec- velopment of the antenna mount model and weighing about 32 lbs (14.5 kg) with
tronics in a radar transponder, yet remain MT2400 TWTA for Ku-band outdoor sat- forced-air cooling. The TWTA, which
stable in frequency with temperature. com uplink and satellite-news-gathering provides 208 W (+53.2 dBm) output
power from 13.75 to 14.50 GHz (as much
as 400 W peak output power), is available
11:48 AM
with gain levels of 60 or 70 dB, depend-
Why not try a different ing upon option, with worst-case gain
approach before you
head to lunch? 1:03 PM
variation of 1 dB per 80 MHz for narrow-
Your second board is
band use and 2.5 dB per 500 MHz for full-
ready to test. band use.
The TWTA, which is designed to meet
10:05 AM
ML-188-164A requirements, includes
Your first board is
ready to test. an Ethernet interface for computer con-
nection and continuous attenuator ad-
justment in 0.1-dB steps. The amplifier
features a Type-N female input connec-
tor and WR-75G Ku-band waveguide
3:14 PM
9:00 AM flange at the output port. It has an oper-
After a few tweaks,
Your circuit design is ating temperature range of −40 to +60°C.
you’re ready to make
done and you’re ready
your finished board. The compact outdoor TWTA can be cus-
to make a prototype.
tomized through a variety of options, in-
cluding an additional input solid-state
4:09 PM
amplifier (SSA), internal linearizer cir-
cuitry, and an input L-band block fre-
Your finished board is
ready to go. quency upconverter.
Teledyne MEC (www.teledyne-mec.
com) offers a website with excellent tech-
5:00 PM nical section on vacuum electron devices,
Nice work. You just including thorough descriptions of key
shaved weeks off your
development schedule.
parameters, including gain, efficiency,
noise, and reliability (http://www.tele-
dyne-mec.com/products/Technical_de-
scription.aspx). The firm also offers a
number of high-performance, broad-
band TWTs through microwave and mil-
limeter-wave frequencies.
ProtoMat® Benchtop PCB Prototyping Machine Model MEC 5424 provides minimum
What would your day look like tomorrow if you could CW output power of 250 W from 6 to 18
cut yourself free from the board house and produce “You can’t beat an LPKF system
for prototyping. We do up to
GHz, with 35 dB gain at 6 GHz, 46 dB gain
true, industrial quality microwave circuits on any at 12 GHz, and 35 dB gain at 18 GHz. It
three iterations of a design
substrate right at your desk? LPKF’s ProtoMat within a day.” achieves typical saturated output power
benchtop prototyping systems are helping thousands Leonard Weber
of 275 W at 6 GHz, 300 W at 12 GHz, and
of microwave engineers around the world take their Agilent
development time from days and weeks to minutes 275 W at 18 GHz with an operating tem-
and hours. In today’s race to market, it’s like having perature range of −40 to +85°C. For high-
a time machine. er frequencies, the company also offers
model MEC 5496, with 40-W minimum
www.lpkfusa.com/pcb
CW output power from 26.5 to 40.0 GHz. It
1-800-345-LPKF
achieves 40 W typical output power at 26.5
GHz, with 45-dB typical gain. The typical

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high-power vacuum tubes
output power is 50 W at 30 GHz, with 50-dB typical gain; 60 W

typical output power at 36 GHz, with 50-dB typical gain; and 40
W typical output power at 40 GHz, with 35-dB typical gain. The
TWT is designed for typical heater power of 0.7 A at −6.3 VDC,
with cathode energy of −13.5 kV at 100 mA, and 6.75 kV at 10 mA
for collector No. 1 and 3.38 kV at 80 mA for collector No. 2.
The TH 3977 DH series of TWTs from the Thales Group
(www.thalesgroup.com) features tubes with a dual-stage collec-
tor design for high efficiency and periodic-permanent-magnet
(PPM) focusing. The tubes are available with typical gain of 50
dB from 17.3 to 18.4 GHz with continuous output-power levels
as high as 750 W across that frequency range. The conduction-
cooled TWTs are ideal for direct-broadcast-satellite (DBS) up-
links as well as for SNG applications.
Of course, the history of high-frequency vacuum electron de-
vices has not been restricted to this country: In Japan, Toshiba 2. This high-power amplifier is based on a klystron vacuum
Electron Tubes & Devices Co. Ltd. (www.toshiba-tetd.co.jp) electron device and includes power supply, active device, and
developed a high-power klystron for UHF television broadcast supporting circuitry. [Photo courtesy of L-3 Electron Devices
applications as far back as 1961. The company has developed Division (www.L-3Com.com).]
some of the world’s most powerful klystrons, including units ca-
pable of 1.2 MW continuous output power at 508 MHz and 100 riety of vacuum electron tube devices for medical, broadcast,
MW pulsed output power at 2.8 GHz using period-permanent- and military applications, including helix and coupled-cavity
magnet (PPM) focusing. At higher frequencies, the firm’s model TWTs, klystrons, crossed-field amplifiers (CFAs), magnetrons,
E3845 TWT delivers 12.5 kW continuous output power for sat- and thyratrons (Fig. 2). The company, which offers miniature
com applications from 9.2 to 9.5 GHz. It features forced-air cool- TWTs for use from 2 to 46 GHz, produces devices with output
ing and long-life, high-current-density cathodes for high reli- levels as high as 5 kW average output power and 150 kW peak
ability and high output power from a package measuring only output power across 10% operating bandwidths at C-, X-, and
499 ×127 × 158 mm and weighing 12 kg. Ku-band frequencies. It also produces microwave power mod-
A firm perhaps best known for its semiconductors, e2v ules (MPMs), which are complete microwave power amplifiers
(www.e2v.com), also offers a wide range of vacuum electron de- based on a TWT, a solid-state driver amplifier, and an electronic
vices that includes klystrons, magnetrons, and helix TWTs. The power conditioner (EPC).
company offers narrowband and wideband devices for com- These are a few examples of the high pulsed and CW output-
mercial and military applications, including the model N10110 power levels possible with vacuum electron devices at RF, mi-
helix TWT for use from 6 to 18 GHz. It offers 45-dB gain across crowave, and millimeter-wave frequencies. Although they must
that range with 180-W CW minimum output power. Designed be powered by high-voltage supplies, these devices still deliver
for 6200-V cathode voltage, the tube measures 329 × 50 × 62 mm. considerably higher power densities that possible with high-
Finally, L-3 Electron Devices Division (www.L-3Com. frequency solid-state devices, and likely that will continue for
com), which began life as part of Litton Industries, offers a va- many years to come. MWRF
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list and PC boards for the HF Broadband RF Transformers RF Transformers Type “U”
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featured in their Application Splitter / Combiners
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508 Millstone Drive,
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Communication Beavercreek, OH 45434-5840 2 Port
PSC-2L 600W PEP
AN779L (20W) AN758 (300W)
AN779H (20W) AR305 (300W) Concepts, Inc. Email: cci.dayton@pobox.com PSC-2H 1000W PEP
AN762 (140W) AR313 (300W) Phone (937) 426-8600 4 Port
EB63A (140W) EB104 (600W) PSC-4L 1200W PEP
AR347 (1000W)
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EB27A (300W)
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NewProducts
Amplifiers Aid EMC Measurements Directional Coupler
C ompact amplifiers in the

R&S BBA150 amplifier
family support electromagnet-
Links 225 To 2500 MHz
C apable of handing high power

levels in a small housing, model
ic-compatibility (EMC) testing IPP-8042 is a dual directional cou-
through 3 GHz, as well as for pler from Innovative Power Prod-
non-EMC applications in com- ucts with a frequency range of 225
ponent production and quality to 2500 MHz. It is rated for 35-dB
assurance. The modular ampli- coupling and maximum input power
fiers can be operated manually of 100 W with less than 0.3-dB inser-
via their front-panel displays, tion loss. The directivity is better
or else remotely via external computer and software. The first model in the than 18 dB and the mainline VSWR
series operates from 0.8 to 3.0 GHz and is available with power levels ranging is less than 1.25:1. The directional
from 30 to 200 W output power. The 200-W version occupies only four height coupler, which provides separate
units in a standard 19-in. rack. coupled ports for both forward and
ROHDE & SCHWARZ USA, INC., 8661A Robert Fulton Dr., Columbia, MD 21046- reflected signals with internal termi-
2265; (410) 910-7800, FAX: (410) 910-7801; e-mail: info@rsa.rohde-schwarz.com, nations, achieves coupling flatness
www.rohde-schwarz.com. of ±1 dB across its broad frequency
range. It is supplied in a miniature
surface-mount package measuring
SDLVA Captures Signals To 6 GHz only 1.00 × 1.00 in. The firm also
S uccessive-detection log-video amplifiers (SDLVAs) such as the model SDLVA-

250M6G-CD-1 help process pulsed and continuous signals over a wide dy-
namic range. This particular unit operates from 0.25 to 6.0 GHz with a dynamic
offers 90-deg. couplers and 180-deg.
baluns in miniature surface-mount
packages, intended for frequency
range from −70 to 0 dBm and ±2.5-dB worst-case ranges meeting and exceeding that
logarithmic linearity. It features a fast rise time of the directional coupler.
of 10 ns or less and recovery time of less INNOVATIVE POWER PRODUCTS,
than 60 ns. Supplied in a compact housing INC., 1170 Lincoln Ave., Holbrook,
measuring just 3.2 × 1.8 × 0.4 in. with female NY 11741; (631) 563-0088, www.
SMA connectors, the SDLVA achieves typical innovativepp.com.
tangential signal sensitivity (TSS) of −73 dBm
and exhibits maximum VSWR of 2.0:1. It can handle Amplifier Boosts Optical Signals
input power levels as high as +17 dBm and draws nominal
current of 350 mA at +15 VDC and 180 mA at −15 VDC. The
amplifier, which is designed for operating temperatures from −40 to
M odel OA3MMQM is a broad-
band 32-Gbaud, lithium-
niobate optical modulator driver
+70°C, meets the applicable requirements of MIL-STD-202F for humidty, shock, amplifier. It is suitable for use in
vibration, and altitude. Mach Zender interferometer
PLANAR MONOLITHICS INDUSTRIES, INC., 7311-F Grove Rd., Frederick, MD 21704; optical modulators and for 400-
(301) 662-5019, FAX: (301) 662-1731, e-mail: sales@pmi-rf.com, www.pmi-rf.com. GB optical long-haul-transponder
applications. It can drive 400 GB of
Splitters Serve In-Building DAS data on an existing International
A line of unequal
power splitters
has been developed by
Telecommunications Union (ITU)
long haul wavelength-division-
multiplex (WDM) fiber channel,
MECA Electronics for in- implemented with 4 channels of 32
building distributed-antenna-system Giga-symbol/s data encoded as
(DAS) applications from 698 to 2700 DP-16QAM modulation schemes.
MHz. The power splitters are available tio of 10:1. The power The driver amplifier draws 300
with split ratios of 2:1, 3:1, 4:1, 6:1, splitters feature outstanding mA from a +5-VDC supply. It pro-
8:1, and 10:1. They are designed to passive-intermodulation (PIM) perfor- vides 20-dB gain with low 7.4-W
achieve minimal variations in coupling mance with a typical level of −155 dBc, power dissipation, flat group delay,
across the frequency range and are and can handle power levels as high as and 11-ps rise/fall time. The driver
suitable for cellular communications 300 W across operating temperatures amplifier suffers less than 0.6 ps
and other wireless applications. The from −55 to +85ºC. RMS jitter.
uneven power dividers deliver output MECA ELECTRONICS, 459 East Main St., CENTELLAX, INC., 3843 Brickway Blvd.
flatness of better than ±1 dB for split Denville, NJ 07834; (973) 625-0661, (866) No. 100, Santa Rosa, CA 95403; (707)
ratios as high as 8:1 and worst-case 444-6322, e-mail: sales@e-MECA.com, 568-5900, e-mail: sales@centellax.com,
output flatness of ±1.2 dB for a split ra- www.e-MECA.com www.centellax.com.

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CTT www ctt com, email: sales@cttinc com 87 Noisecom www noisecom com BC
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E Panasonic www panasonic com/industrial/electronic-components,
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email: sales@eclipsemicrowave com 72 Phase Matrix www phasematrix com, email: sales@phasematrix com 24
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Fairview Microwave www fairviewmicrowave com, Planar Monolithics Industries www pmi-rf com, email: sales@pmi-rf com 1
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Hittite Microwave Corporation www hittite com, email: pll@hittite com 67 RLC Electronics www rlcelectronics com, email: sales@rlcelectronics com 25
Rohde & Schwarz www rohde-schwarz com 47
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Indium Corporation http://indium us/F615 26 Skyworks www skyworksinc com 73
Stanford Research Systems www thinksrs com 37
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Lark Engineering Company www larkengineering com, Synergy Microwave www synergymwave com,
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Linear Technology Corporation www linear com 17 Synergy Microwave www synergymwave com,
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Mini Circuits/Sci Components www minicircuits com 30 W

Mini Circuits/Sci Components www minicircuits com 31 Waveline Inc www wavelineinc com 74
Mini Circuits/Sci Components www minicircuits com 35 Wright Technologies www wrighttec com 94
Mini Circuits/Sci Components www minicircuits com 41

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NewProducts
able over the frequency bands of 5 to 0-dBm typical output power (+3 dBm
42 MHz and 54 to 1000 MHz, with maximum) into a 50-Ω load with a
typical insertion loss of only 0.5 dB in +5-VDC supply and maximum current
either frequency band. Signal isola- consumption of 30 mA. Te CRO,
tion is typically 55 dB from 5 to 37 which is suitable for applications in
MHz; 50 dB from 54 to 100 MHz; 55 digital radio equipment, fixed wireless
dB from 100 to 600 MHz; and 50 dB access, and satellite communications
from 600 to 1000 MHz. Return loss is (satcom) systems, is housed in an
typically 16 dB across its full frequency industry-standard 0.5 × 0.5 in. pack-
range of operation. Te diplexer, which age. It has an operating temperature
is rated for maximum RF power of 250 range of −40 to +85ºC.
mW and DC current of 30 mA, has an CRySTek CoRP., 12730 Commonwealth
operating temperature range of −40 to Dr., Fort Myers, FL 33913; (239) 561-3311,
+85°C. Te RoHS-compliant compo- (800) 237-3061, FAX: (239) 561-1025, www.
nent, which is supplied in an 11-pin crystek.com.
surface-mount package, is available in
tape-and-reel format for high-volume- GaAs Switch Controls 4.5 GHz
production applications.
M/A-CoM TeCHnoloGy SoluTionS,
inC., 100 Chelmsford St., Lowell, MA
M odel TQP4M0010 is a gallium
arsenide (GaAs) field-effect-
transistor (FET) absorptive switch
Portable Analyzers 01851; (800) 366-2266, (978) 656-2500, for use from 100 to 4500 MHz. Te
Scan Signals To 2.7 GHz www.macomtech.com.
T he PSA Series II line of micro-

wave spectrum analyzers includes
1.3- and 2.7-GHz versions, with long
CRo Tunes From
5580 To 5685 MHz
rechargeable lithium-ion battery life
of more than eight hours per charge
to assist in-field testing. Both instru-
D esigned for communications
applications, the model CV-
CO55CXT-5580-5685 coaxial resona-
ments incorporate a 4.3-in. (11-cm) tor oscillator (CRO) operates from
backlit thin-film-transistor (TFT) color 5580 to 5685 MHz with low harmonic
touchscreen display. Te PSA Series II distortion. It consists of a coaxial-
PSA1302 spans 1 to 1300 MHz, while based voltage-controlled oscillator
the PSA Series II PSA2702 operates (VCO) with an internal frequency
from 1 to 2700 MHz. Both instru- doubler. Te proprietary doubling
ments feature a noise floor of −100 circuitry controls harmonic generation single-pole, double-throw (SPDT)
dBm and 80-dB dynamic range. Te to contribute to the CRO’s excellent switch provides 50 dB or more isola-
resolution bandwidth can be set as spectral purity, with low phase noise tion between ports through 1 GHz
fine as 15 kHz. Te ruggedized cas- and low current consumption during and typically 40 dB or better isolation
ing incorporates a rubber protection normal operation. Pushing and pulling through 4.5 GHz. It minimizes inser-
buffer, a bench stand, and screen tion loss to typically 0.5 dB from 0.1 to
protection. For bench-top use, the 1.0 GHz; 0.6 dB from 1.0 to 2.5 GHz;
instrument can be operated continu- 0.7 dB from 2.5 to 3.0 GHz; and 0.8 dB
ously from its AC charger. Te compact from 3.0 to 4.5 GHz. Te switch, which
handheld spectrum analyzers weigh achieves a typical input 1-dB compres-
only 20 oz. (560 g) with simple opera- sion point of +33 dBm at 2 GHz, can
tion from the finger-operated touch- handle input signals as large as 2 W
screen display. (+36 dBm). Ideal for wireless infra-
SAelinG Co., inC., 71 Perinton Pkwy., structure applications and in test and
Fairport, NY 14450; (888) 7-SAELIG, measurement equipment, the GaAs
(888) 772-3544, (585) 385-1750, FAX: switch is supplied in a 4 × 4 mm lead-
(585) 385-1768, e-mail: info@saelig.com, are controlled to 1.5 MHz/V and 0.5 less surface-mount package, operates
www.saelig.com. MHz, respectively, with typical second- on supplies from +3 to +5 VDC, and
harmonic suppression of −30 dBc. handles operating temperatures from
Diplexer Screens CATV Systems Te model CVCO55CXT-5580-5685 −40 to +85ºC.
M odel MAFL-011013 is a 75-Ω

broadband diplexer filter for
cable-television (CATV) applications,
CRO covers its frequency range with
a tuning voltage range of +0.3 to +4.7
VDC. Te coaxial VCO features a typi-
TRiquinT SeMiConDuCToR, inC.,
2300 NE Brookwood Pkwy., Hillsboro, OR
97124; (503) 615-9000, FAX: (503) 615-
direct-broadcast-satellite (DBS), and cal phase noise of −102 dBc/Hz offset 8902, e-mail: info-sales@tqs.com, www.
cable-modem applications. It is us- 10 kHz from the carrier. It provides triquint.com.

Bigger where it counts…
in the Performance.
Boonton’s 4540 Peak Power Meter delivers the outstanding • Frequency range: 9.9kHz to 40 GHz
performance needed for today’s demanding radar and • Time resolution: 200 ps
communication applications. By incorporating advanced tech- • Video bandwidth: 70MHz
nology from our flagship 4500B peak power analyzer, the • Rise time: <7ns
smaller, economically priced 4540 outperforms higher priced • Effective sampling rate (RSS): 5GSamples/second
competitors in many areas. It’s fast update rate enables tun- • Statistical analysis including CCDF
ing high power amplifiers and processing large amounts of • GPIB, USB (device) and LAN standard
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www.defenseelectronicsmag.com
A Special Section to Penton’s Design Engineering & Sourcing Group APRIL/MAY 2013
Sources
Synthesize
Arbitrary
Waveforms
to
20 GHz
14 | MEASURING PHASE NOISE 28 | SIMULATOR TRAINS INFANTRY 30 |MATRICES SWITCH TO 40 GHz

Micro Lambda's Compact Wideband
YIG-based Synthesizers...
Ideal for Main Local Oscillator for Test Equipment,
Receivers and VSAT Applications
The MLSP-Series of YIG-Based wideband synthesizers For more information about the
provide 1 kHz frequency resolution over the 600 MHz to MLSP Series or other products, please
20 GHz frequency range. Power levels of +8 to +13 dBm contact Micro Lambda Wireless.
are provided through out the series and full band tuning
speed is 6mSec. Compact size will fit a 2 slot PXI chassis.
See our complete line of frequency synthesizers www.microlambdawireless.com
MLSL-series MLSN-series MLSW-series MLBS-series

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A SPECIAL SECTION TO PENTON’S DESIGN ENGINEERING & SOURCING GROUP
APRIL/MAY 2013
TABLE OF CONTENTS
DEPARTMENTS
EDITORIAL ............................. 7
NEWS SHORTS .................... 8
CONTRACTS ........................ 12
DESIGN & TECHNOLOGY
Reviewing Phase Noise
Measurement Methods. . . . . . . . . 14
PRODUCT FEATURES
Simulator Assists
Infantry Training . . . . . . . . . . . . . . . . . . 28
Switch Matrices
Reconfigure To 40 GHz. . . . . . . . . . 30
PRODUCTS .......................... 32
ADVERTISERS INDEX .......... 34
Waveform
Generators Run
To 50 GSamples/s ... 24
S4 APRIL/MAY 2013 • DEFENSE ELECTRONICS

Editorial
editor in chief: Nancy K. Friedrich (212) 204-4373
nancy.friedrich@penton.com
technical contributor: Jack Browne (212) 204-4377
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defense electronics • APRIL/MAY 2013 S5

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EDITORIAL
O
Measuring The Value of Test Gear

W
hether by land, sea, or air, de- Impressive coordination and timing is needed among different
fense-electronics systems are engineering groups to bring a new test instrument to market.
designed to use a variety of Whether a group is involved in developing control software or
electrical and optical signals for detection is part of a team trying to produce a local oscillator (LO) with
and protection. Many of these systems feature imaginative use slightly lower phase noise, all of the contributions are important
of hardware and software; they often extract high performance and all are vital to the success of the final product.
levels from the latest available technology. But for all the ad- The instruments featured in this month’s issue offer state-of-
vanced technologies that may combine for a new radar system the-art capabilities in signal generation and analysis. But they are
or electronic-warfare (EW) platform, those systems and their not quirky. The engineering teams that create test instruments
components must still be tested. that are vital to electronic product development know that these
Major suppliers of test equipment design and build solutions instruments must provide repeatable performance day after day.
for far more than just defense electronics customers, of course; Considering the number of different components and
they are often driven by the needs of large markets in commercial subsystems in some of these instruments, performance variations
communications. But when new test-equipment products might be expected under changing environmental conditions.
provide new levels of performance, their benefits are often But modern test instruments from major equipment suppliers
far-reaching across a number of different markets including are stable and dependable. Electronic design engineers working
commercial, military, industrial, automotive electronics, and in defense electronics and in those many other industries count
even medical electronics markets. on such instruments for reliable results.
Test equipment suppliers do not often receive the credit Defense electronics systems and test equipment have long
due to them. Modern RF/microwave test equipment, such as been interdependent, relying on each other for a push to the
that mentioned in this issue’s Cover Story on real-time signal next generation of hardware/software and the next level of
analyzers, or the feature on arbitrary waveform generators, don’t performance. The engineering teams that work on both types of
just combine hardware and software; they combine different products are to be applauded for their efforts. DE
kinds of hardware and software. This hardware tackles everything Jack Browne
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DEFENSE ELECTRONICS • APRIL/MAY 2013 S7

NEWS SHORTS
Lockheed Martin Aids
USAF’s GEO Satellites
T
he United States Air Force has awarded Lockheed
Martin (www.lockheedmartin.com) a $284.4 million
fixed-price contract for long-lead parts for the fifth and
sixth geosynchronous earth orbit (GEO) satellites in the
Space Based Infrared System (SBIRS) missile-warning
system. The SBIRS system is comprised of GEO satellites,
hosted payloads in highly elliptical earth orbit (HEO), and
associated ground hardware and software. Lockheed
Martin previously received a contract to complete non-
recurring-engineering (NRE) services for the GEO-5 and
GEO-6 satellites and procure long-lead spacecraft parts that
would enable supplier production lines to deliver the lowest
possible price for each component. This contract authorizes
the purchase of the remaining long-lead spacecraft Engineers inspect this SBIRS satellite prior to encapsulation
components, with a final contract for full production into the launch vehicle payload.
under fixed-price terms to be awarded at a future date.
Jeff Smith, Vice President of Lockheed Martin’s capabilities to the nation at the best value to the
Overhead Persistent Infrared (OPIR) mission area, explains: government.” Lockheed Martin’s SBIRS contracts
“This contract award is a testament to the importance include four HEO payloads, four GEO satellites, and
of the SBIRS program and reinforces the government’s ground equipment to receive, process, and disseminate
confidence in our ability to produce these vital satellites the IR mission data. The SBIRS system is operated by
efficiently going forward.” He adds: “As we produce the US Air Force Space Command (www.afspc.af.mil),
follow on SBIRS assets, we aim to continually reduce with Lockheed Martin serving as the prime contractor
the cost and cycle time of each space vehicle to ensure and Northrop Grumman (www.northropgrumman.com)
we deliver critical and resilient infrared surveillance as the payload integrator.
Satellite Controls Unmanned Vehicle
S
atellite-based control of battlefield the demonstration was to show that SMSS movement and sensor
vehicles took one step closer to the unmanned system can provide functions were controlled at the
becoming reality with a recent the needed battlefield situational remote station, through the line-of-
demonstration at Camp Grayling, awareness while keeping soldiers sight satellite. In a simulated mission,
MI by Lockheed Martin (www. out of harm’s way. According to an operator provided a pre-planned
lockheedmartin.com). During the Joe Zinecker, Director of Combat route and SMSS autonomy allowed
demonstration, the company’s Squad Maneuver Systems at Lockheed navigation with minimal operator
Mission Support System™ (SMSS) Martin Missiles and Fire Control, intervention. Other autonomous
was being controlled via satellite “These demonstrations allow the functions—such as follow-me, go-
from more than 200 miles away. Army development communities to-point, and retro-traverse—were
The SMSS unmanned ground to better understand capabilities also demonstrated.
vehicle (UGV) conducted several available to them with SMSS Zinecker notes that “the concept
battlefield surveillance operations right now. We are showing our of an affordable common mobility
while being controlled beyond line- customers innovative ways to employ platform coupled with specialized
of-sight via satellite from the US SMSS vehicles in missions while mission equipment packages is
Army’s Tank Automotive Research, demonstrating that we are ready to the right answer for UGVs to
Development and Engineering move from technology development reduce development, production,
Center (Warren, MI). to fielding these valuable and mature and sustainment costs, while
The SMSS was equipped with a new capabilities.” providing maximum flexibility for
Gyrocam 9M Tactical Surveillance The SMSS used an adjustable- commanders. SMSS continues to
Sensor and a General Dynamics height mast with the Gyrocam demonstrate its readiness to move
SATCOM Technologies “SATCOM- 9M to acquire a high-resolution into the next phase of the Army’s
On-the-Move” system. The hope for electro-optical and thermal video. UGV roadmap.”

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ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 510 rev A
NEWSS SHORTS
O S
Secure Mode 5 IFF SM-3 Space Sensor

System Passes Tests Helps Take Out Target
A T
pair of leading United Kingdom defense racking data from a remote sensor on Space Tracking and
suppliers recently teamed on the Surveillance System-Demonstrator (STSS-D) satellites helped
successful over-the-air testing of an destroy a medium-range ballistic missile (MRBM) target. The test
upgraded Mode 5 identification friend or was performed with the Standard Missile 3 (SM-3) space sensor from
foe (IFF) system. The trial involved Raytheon Raytheon Co. (www.raytheon.com) sending guidance data to a SM-3
UK (www.raytheon.co.uk) and Thales UK Block IA missile fired from the US Navy’s USS Lake Erie guided-missile
(www.thalesgroup.com/uk). The former is a cruiser. For the test, the MRBM target missile was launched from the
subsidiary of Raytheon Co. (www.raytheon. Navy’s Pacific Missile Range Facility (Kauai, HI). Once above the horizon,
com) and a major supplier to the UK Ministry the target was acquired and tracked by STSS-D satellites, with threat
of Defence (MOD), while the latter is a major data relayed through the Command, Control, Battle Management, and
supplier to aerospace, defense, and security Communications (C2BMC) system to the ship. Based on the STSS
markets. The trials, performed at Raytheon’s tracking data, the ship’s crew fired the SM-3 missile before the ship’s
Matching Green test range (Harlow, UK) in radar had acquired the target missile.
early December, involved Thales’ TSA1412 The test was performed to prove the “launch on remote” concept,
Interrogator and Raytheon UK’s IFF4810 first demonstrated during testing in April 2011 when a US Naval
Transponder, a standard-fit Successor IFF destroyer used tracking data provided by a Raytheon-built AN/TPY-2
(SIFF) product with Mode 5-enabled upgrade. radar on Wake Island to engage and destroy an intermediate-range
The Mode 5 system is designed to ballistic missile target using an SM-3 Block IA missile. Wes Kremer,
provide a high level of cryptographic security Raytheon Missile Systems’ Vice President of Air and Missile Defense
while also featuring excellent resistance Systems, notes: “Launching on remote is important because it extends
to electronic-countermeasures (ECM) the engagement range of the missile, allowing ships with the SM-3 to
efforts. The Raytheon and Thales equipment expand the battle space and eliminate threats sooner.”
were fitted with model KIV-77 Mode 5 Bill Hart, Vice President of Space Systems for Raytheon’s Space
Cryptocomputers developed by Raytheon and Airborne Systems business, adds that “STSS-D’s unique vantage
in the United States. Raytheon and Thales point in space allows the sensor payload to see the threat early in its
teamed as part of an agreement signed in trajectory, and provide launch quality data sooner than nearly any other
July 2012 to pursue the MOD procurement option. We can give our naval war fighters extra time to analyze and
of the next-generation NATO interoperable respond by providing target data before the ship can track the threat.
Mode 5 IFF system. The IFF system, which That’s a tremendous advantage.”
can be fitted to aircraft, ships, and missile
defense systems, allows them to identify
friendly and hostile forces.
Richard Daniel, Managing Director for
Boeing Recognizes
Raytheon UK’s defense business, remarked
that “Raytheon has invested in developing
Richardson RFPD
B
the Mode 5 upgrades for existing equipment, oeing Co. (www.boeing.com) has presented Richardson RFPD
and Thales has Mode 5-qualified equipment (www.richardsonrfpd.com) with the 2012 Boeing Performance
already in service with French and other NATO Excellent Award. Boeing annually issues the award to suppliers
armed forces. By teaming, we exploit the that have provided excellent performance. Richardson RFPD
complementary strengths of both companies maintained a Silver composite performance rating for each month
to minimize platform integration risks for of the 12-month performance period, from October 1, 2011 to
Mode 5.” He added that “together, we would September 30, 2012. Boeing recognized 594 suppliers that have
seek to ensure maximum continuity of achieved either a Gold or Silver level award; Richardson RFPD was
operational availability by applying our already one of 441 suppliers to receive the Silver level award.
successful front-line support model during Greg Peloquin, President of Richardson RFPD, explains: “We are
the transition to Mode 5.” Victor Chavez, Chief proud to be recognized by a customer as prestigious as the Boeing
Executive Officer for Thales UK, elaborates: Co. for superior supplier performance.” He adds that “Richardson
“IFF Mode 5 is an important program enabling RFPD takes great pride in working alongside our customers to
future interoperability for the UK in NATO provide support, products, and solutions for their design visions, and
coalition operations. Both Thales and Raytheon the Boeing Performance Excellence Award further motivates us to
have cutting-edge capability in this area, and continue striving for operational excellence in all facets of our global
by working together we would provide the UK business.” Richardson RFPD supplies a wide range of RF/microwave,
MOD with a world leading IFF solution.” interconnect, and power-conversion products for the aerospace and
defense industries. (“News Shorts” continued on p. 31.)

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CONTRACTS
LGS Innovations Wyle Assists Naval Air
Helps Army’s MCF Systems Command
L W
GS Innovations (www. existing facilities to the MCF. yle has been awarded a
lgsinnovations.com) has been The MCF, designed as a state-of- three-year, $24 million
awarded a contract worth slightly the-art commercial communications contract to provide
more than $49 million to upgrade the operations center, will serve as the unmanned air systems support
US Army’s Main Communications central information systems hub to the US Naval Air Systems
Facility (MCF) in Southwest Asia. LGS, for the region. Command. The contract provides
an independent subsidiary of Alcatel- LGS Innovations Chief Executive reliability improvement, testing,
Lucent, was selected as the exclusive Officer Kevin Kelly explains: “LGS technology insertion, and life-
contractor to engineer, furnish, install, deploys the most advanced, state-of- cycle analysis for unmanned
test, and secure the Army’s extensive the-art communications technologies air systems and intelligence,
network, transmission, and voice available to both defense and civilian surveillance, and reconnaissance
infrastructure in Southwest Asia. This organizations. This opportunity to projects and programs. Personnel
work falls under the umbrella of the upgrade and modernize such a from Wyle (www.wyle.com) will
Army’s Infrastructure Modernization mission critical piece of infrastructure help cost-effectively develop and
(IMOD) initiative. The company has for the US Army will not only refine processes and equipment
also been tasked to execute a critical support our military and warfighters to increase the reliability,
cutover of transmission circuits, as abroad, but will also help the Federal maintainability, sustainability,
well as to design, develop, furnish, Government to continue to provide quality, and interoperability of the
and install a virtualized infrastructure for homeland security and overcome Naval Air Systems Command’s
to accommodate the migration of future overseas communications systems. Reducing life-cycle
servers and their applications from challenges.” costs while implementing new
or updated technologies is an
important part of the contract. As
TCS Recruited For Wyle Program Manager Rocky
Rauch notes: “We are pleased
Marines’ WPPL Systems that Wyle has been awarded
this contract, following
our successful execution of
T
eleCommunication Systems, Program—part of the US Army’s $5 unmanned aerial system projects
Inc. (TCS; www.telecomsys. billion World-Wide Satellite Systems ...under a related contract
com) has been awarded $16.1 (WWSS) contract vehicle. over the past two years.”
million in incremental funding for According to Michael Bristol, Senior Work on the contract is being
communications support to the Vice President and General Manager performed primarily at Naval Air
United States Marine Corps (USMC). of TCS Government Solutions, “While Station Patuxent River, MD. The
The award is for deployed engineering it’s imperative that the USMC has task order was issued under the
services for the USMC’s Wireless secure, reliable, and easily deployable Defense Technical Information
Point to Point Link (WPPL) systems. communications equipment, that’s Center’s Reliability Information
These services, which apply to only half the battle. They also need Analysis Center contract. As part
both satellite communications the expertise backing that equipment, of the contract, Wyle is performing
(satcom) and terrestrial wireless and that’s where TCS’ knowledgeable acquisition planning; system
communications systems, will aid and reliable Deployed Engineering interoperability assessments;
USMC vital operations in technical Services personnel come in.” The integrated reliability test planning
control facilities and data/security WPPL systems provide secure and management; affordability
centers along with tactical USMC point-to-point and point-to-multipoint; and life cycle cost analysis;
systems. The communications line-of-sight; and non-line-of-sight logistics management; and various
support procurement is being transmission of voice, video, and management tasks associated
managed by the US Army Project data communications as a low- with the data collection and testing
Manager for the Warfighter cost alternative to more expensive of electrical, mechanical, and
Information Network-Tactical (PM- beyond-line-of-sight satcom avionics systems.
WIN-T) Commercial Satellite Terminal approaches.

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details and product availability, visit our web site www.minicircuits.com.
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ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 463 rev G
DESIGN &TECHNOLOGY
ESIGN
RICHARD OVERDORF / AEROSPACE DEFENSE PLANNING
WALT SCHULTE / AEROSPACE DEFENSE APPLICATION ENGINEER
Agilent Technologies, Microwave Communications Division, 1400 Fountaingrove Pkwy.,
Santa Rosa, CA 95403-1738; (707) 577-5131, e-mail: richard_overdorf@agilent.com, www.agilent.com.
Reviewing Phase E
xtracting signals from noise is a
task that has challenged RF and
microwave engineers since the
Noise Measurement earliest days of electronic communica-

tions systems. Engineers involved with
cutting-edge radar and communication
Methods systems often use extreme amounts of

signal processing to extract maximum in-
formation from faint or impaired signals.
A major obstacle these engineers must
Different approaches have different strengths and often overcome is phase noise, which
can severely limit the performance of a
weaknesses, and each is best for characterizing receiving system.
different types of RF/microwave signal sources. Phase noise is often the nemesis that
limits the performance of a receiving sys-
tem. For example, it can degrade the ca-
pability of a pulsed-based radar system to
process Doppler information, and impair
the error-vector-magnitude (EVM) per-
formance of a digitally modulated com-
munications system. Measuring phase
noise is consequently vital to improving
the performance of these and other RF
dBc/Hz
Flicker or microwave electronic systems used in

noise
military and commercial applications.
Amplifier noise Phase-noise measurements may seem
difficult to some more like a puzzle,
with many oddly shaped pieces that are
Thermal noise difficult to connect. Even with today’s
advanced hardware and improved tech-
Log frequency niques, the process of making measure-
ments and interpreting the results may
1. The three main contributors to source noise create a theoretical lower limit for phase still contain a certain amount of mystery.
noise measurements. To help clear things up, it may be useful
to first review some fundamental details
about phase noise. Next, we will detail the
three most common phase-noise mea-
0 Reference section surement techniques and to which appli-
–10 Synthesizer section
–20
cations they are best suited.
YIG oscillator
–30 Phase noise is essentially a measure of
Output section
–40 an electronic signal’s frequency stability.
–50 The long-term frequency stability of for
–60
example an oscillator, can be character-
Frequency—Hz
–70
–80 ized in terms of hours, days, months, or
–90 even years. Short-term stability refers to
–100
frequency changes that occur over a period
–110
–120 of a few seconds or less. These short-cycle
–130 variations can have deleterious effects on
–140 electronic systems that rely on extensive
–150
–160
processing to extract information from a
–170 signal. Thus, this discussion will focus on
1 10 100 103 104 105 106 107 108 short-term stability.
Phase noise—dBc/Hz Short-term stability can be described
in many ways, but the most common is
2. Contributions to the phase-noise performance of a signal generator can be traced to single-sideband (SSB) phase noise. The
the major sections of its internal architecture. United States National Institute of Stan-

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ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
498 rev.B
DESIGN
S G &TECHNOLOGY
C O OG
dards and Technology (NIST; www.nist.gov) defines SSB phase carrier frequency, increasing by 6 dB for every doubling in fre-
noise as the ratio of two power quantities: the power density at a quency. As a result, when characterizing the performance of
specific frequency offset from a signal carrier and the total power components integrated into advanced radar and communication
of the carrier signal. This is most commonly measured in a 1-Hz systems, measurements of phase noise for a 1-GHz carrier signal
bandwidth at some frequency “f ” away from the carrier. The may extend from roughly −40 dBc/Hz at offsets “close to the car-
units of measure are in decibels relative to the carrier per Hertz rier” (such as 1 kHz or less) to as low as −150 dBc/Hz or less at
(dBc/Hz) over a 1-Hz bandwidth. offsets “far from the carrier” (such as 10 MHz or more). At such
The level of phase noise is deterministically related to the low levels, the measurement noise floor is affected by two mi-
croscopic electronic effects: thermal noise from passive devices,
which is broad and flat (white noise), and flicker noise from ac-
tive devices, which has a shape akin to the inverse of frequency,
Phase detector 1/f (such as pink noise), that emerges from the thermal noise
at lower offsets. Both of these contributors are unavoidable be-
Signal 1
cause they are present all along the signal chain in the measur-
ing instrument, in the device that produces the signal-under-test
(SUT), and even in the cables used to connect the measuring
instrument to the device under test (DUT).
∆Vout = K∆φin
Any type of amplifier in the test signal chain will also serve as a
∆φ φ
source of noise. While the main purpose of the amplifier is to in-
crease the power level of a weak carrier signal, it also adds its own
noise to the signal and boosts any input noise. The net result is
that the amplifier, thermal noise, and flicker noise continue to give
any phase-noise plot a characteristic shape and, more significant-
Signal 2
ly, reduce the theoretical lower limit of sensitivity for any phase-
noise measurement (Fig. 1). These effects appear in the phase-
noise characteristics of any high-performance signal generator.
3. This basic phase-detector concept has been implemented in The underlying sources of noise can be traced back to the ma-
many ways. jor sections of the block diagram for such an instrument (Fig.
2). For offsets below 1 kHz, the noise
is dominated by the performance of
DUT
the reference oscillator, which is mul-
Lowpass Low-noise tiplied to the carrier frequency. In this
filter amplifier particular signal-generator design, the
(LPF) (LNA)
other major contributors include the
Baseband
90 deg.
analyzer synthesizer circuitry at offsets of 1 kHz
to roughly 100 kHz, the yttrium-iron-
Phase detector
Reference source
(mixer) garnet (YIG) oscillator for offsets from
100 kHz to 2 MHz, and the output am-
plifier for offsets above 2 MHz. When
Phase-lock these effects on phase noise are well
loop (PLL)
understood, they can be minimized and
optimized within a system design to en-
4. This method uses a reference source and a double-balanced mixer as the basis of the sure maximum performance.
phase detector. Phase-noise measurement techniques
have evolved along with advances in
Delay line
analyzer technology. Three phase-noise
measurement methods (ranging in com-
Low-noise plexity from basic to intermediate) are
Lowpass filter amplifier
(LPF) (LNA) direct spectrum measurements, phase-
DUT
Baseband detector-based measurements, and two-
90 deg.
analyzer channel cross-correlation techniques.
Splitter
Phase detector
The direct-spectrum approach is the old-
Phase
(mixer) est and perhaps simplest way to measure
shifter phase noise. In this approach, the SUT
or DUT is simply connected to the input
5. Splitting the SUT and manipulating it with a delay line and phase shifter eliminates the port of a spectrum or signal analyzer and
need for reference source. then tuned to the carrier frequency of in-

Elusive signals can hide,
but not for long.
Understand what’s happening in the most Real-Time Spectrum Analyzer

signal-rich environments or systems. Detect
transients or interference, even small Industry-best POI: > 3.57 μs
signals in the presence of large ones. And 160 MHz BW across 50 GHz frequency range
achieve the best probability of intercepting Up to 75 dB of spurious-free dynamic range
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Learn more: Measuring Agile Signals and

Dynamic Signal Environments app note
www.agilent.com/find/elusive-signals
© Agilent Technologies, Inc. 2013 u.s. 1-800-829-4444 canada: 1-877-894-4414

DESIGN
S G &TECHNOLOGY
C O OG
exyn
corporation
We have specialized in Low Phase Noise terest. Two measurements are then made: to perform these corrections manually
Fixed Frequency Sources since 1998. First, the power level of the carrier is (Agilent Technologies’ Application Note
measured. Next, the power spectral den- No. 150 provides guidance in this pro-
sity (PSD) of the signal source noise, at cess). But these extra steps are no longer
A plot of our new quieter FRDRO line. a specified offset frequency, is measured necessary when using a signal analyzer
and referenced to the level measured for equipped with either an interval-band/
COMPARE NXOS AND NXFR SERIES FRDRO
the carrier power. interval-density marker function (for the
TYPICAL PHASE NOISE AT 10 kHz OFFSET
-100
As is often the case when using a sim- PSD measurement) or a built-in phase
ple measurement approach, a variety of noise measurement application.
-105
corrections must be made to ensure an Time and experience have revealed the
-110 accurate result. For example, it may be limitations of the direct-spectrum phase-
necessary to correct for the noise band- noise measurement method. Most of
-115
d width of the signal or spectrum analyzer’s these limitations are related to shortcom-
B -120 resolution-bandwidth (RBW) filters. In ings in the quality or performance of the
c
-125 addition, it may also be necessary to cor- signal or spectrum analyzer: the residual
NXFR rect for the behavior of the analyzer’s peak frequency modulation (FM) of the in-
-130
NXOS detector, which may under-report the ac- strument’s local oscillator (LO), the noise
-135 tual noise power. It was once necessary sidebands or phase noise of the analyzer’s
-140
2 3 4 5 6 7 8 9 10 11 12
F(GHz)
Basic theory of operation (for a single channel of the E5052B)
 Crystal reference phase noise to FFL filter

-130 dBc/Hz @ 100 Hz @ 100 MHz LO
Frequency locked loop Phase
noise
 Dual loop output
fLO Scaling amp
T (wide)
frequency resolution +/- 0.001 Hz BPF ADC LPF
 Internal reference stability Mixer DSP

to +/- 10 ppb fRF
Time
(FFT)
 5 - 1000 MHz External reference Signal source

under test
fIF
LPF
 Frequency: 10 MHz to 35 GHz AM
noise
 Power output: +10 to +24 dBm Note that a main signal still exists at this point.
This limits the dynamic range of the digital Digital signal processing
 Wide operating temperature discriminator method. T is set at 1/(4fIF) (in seconds)
range: -55º to +85º

6. Digital technology makes it possible to mimic the behavior of the analog delay line and
 Spurious: < -90 dBc produce accurate phase noise measurements.
We welcome your custom requirements.
PLL
Reference source 1
Phase
detector
(mixer)
LNA
90 deg.
LPF
DUT
Cross-
correlation Display
operator
Splitter
Nexyn offers the best performance and LPF LNA
reliability on the market. 90 deg.
Phase
1287 Forgewood Ave. detector
(mixer)
Sunnyvale, CA 94089 Reference source 2
Tel: (408) 962-0895 PLL
Fax: (408) 743-5354
sales@nexyn.com
7. The two-channel cross-correlation technique utilizes two phase detectors.
www.nexyn.com

DESIGN &TECHNOLOGY
LO, and the analyzer’s noise floor can all

impact the phase-noise measurement re-
sults. In addition, most spectrum analyz-
ers measure only the scalar magnitude
of the SUT noise sidebands. As a result,
the analyzer cannot differentiate between
amplitude noise and phase noise. Finally,
the process is complicated by the need to
make a noise measurement at every fre-
quency offset of interest potentially, a
very time-consuming task.
In the phase-detector measurement ap-
proach, a phase detector is used to sepa-
rate the phase noise from the amplitude
noise. Figure 3 shows how the phase
detector converts the phase difference of
two signals into a voltage available at the
output of the phase detector. When this
phase difference is set to quadrature, the
voltage is zero. Any phase fluctuation from
quadrature will result in a corresponding
voltage fluctuation at the output and a 8. This uniform test signal can be used to verify the performance of a phase noise
value other than zero. The phase-detector measurement solution.
approach is the basis for several common-
ly used phase-noise measurement tech-
niques, including the reference-source/
phase-locked loop (PLL) method, the
frequency-discriminator method, and the www.SignalAntenna.com
heterodyne digital discriminator method.
The reference-source/PLL method
uses a double-balanced mixer as the DC-20 GHz!
detector, with the reference frequency CUSTOM DESIGNS
source and the SUT serving as the inputs
to the mixer (Fig. 4). The reference source HI POWER
is controlled such that it follows the SUT HELIX
at the same carrier frequency, but with a
90-deg. phase offset. To ensure accurate
measurements of the SUT, the phase B’BAND ANTENNAS
noise of the reference source should be as
low as possible, with behavior that is well-
LOG PERIODIC
characterized. The sum frequency from OMNI
the mixer is removed by means of a low- SAS antennas at work
EMC TEST
pass filter, while the difference frequency protecting our forces:
is 0 Hz with an average output voltage MAN-WORN
of 0 VDC. Any AC voltage fluctuations OTH HF RADAR
will rise on top of the DC voltage, and be
proportional to the combined noise con- Signal Antenna Systems, Inc.
tributions of the two input signals. In this
phase-noise measurement approach, the 8-B Hangar Way
baseband signal from the mixer is often Watsonville, CA 95076
boosted by a low-noise amplifier (LNA) Phone: (831) 722-9842
before being connected to the input port
of a baseband analyzer.
Email: info@signalantenna.com
The reference-source/PLL phase-noise
measurement method yields the overall
best sensitivity and the widest measure-
ment coverage, with a frequency-offset

DESIGN &TECHNOLOGY
FULL METAL
JACKET
for your electronic systems
range that spans 0.1 Hz to 100 MHz. It is also insensitive to AM
noise and is capable of tracking drifting sources. However, it re-
quires a reference source with low phase noise and with the ca-
pability of being tuned electronically. In addition, if the SUT has
a high frequency drift rate, the reference source must be tunable
over a very wide frequency range.
The frequency-discriminator phase-noise measurement
method simplifies the equipment configuration and measure-
ment process by substituting an analog delay line for the refer-
ence oscillator. In this approach (Fig. 5), the SUT is split into
two channels. One path is delayed relative to the other, and the
delay line converts frequency variations into phase fluctuations.
Adjusting the delay time will determine the phase quadrature
of the two inputs to the mixer. The phase detector converts the
phase fluctuations into voltage variations that are measured as
frequency noise by the analyzer. The frequency noise is then
converted to a phase noise reading for the SUT or DUT.
Unfortunately, this method sacrifices some measurement
sensitivity, especially at offsets close to the carrier. Longer delay
lines can improve sensitivity, but while also reducing the signal-
to-noise ratio (SNR) of the measurement setup and limiting the
maximum measurable offset frequency. The insertion loss of the
delay line can also be a concern when trying to produce mea-
surable test signal levels when analyzing low-level signals. As a
result, this method works best with free-running sources such as
inductor/capacitor (LC) oscillators and cavity oscillators. These
In the 21st century battlefield, cyber tend to produce noisy signals that have high-level, low-rate phase
security is the front line. The National noise or high close-in spurious sideband conditions that can lim-
Defense Authorization Bill, H.R 1540, recog-
it the performance of the PLL technique.
nized this and requires protection against
any EMP assault. The Equipto R6 is a major
In the heterodyne digital discriminator method, a hetero-
shield in that battle, defending against EMP dyne digital discriminator replaces the analog delay line of
weapons and geomagnetic storms that can the frequency-discriminator phase-noise measurement method.
“take out” communication centers, power In this approach (Fig. 6), the SUT is downconverted to an in-
plants, electronically-controlled infrastruc- termediate frequency (IF) by means of a mixer and a frequency-
ture, surveillance systems and more. locked LO. The IF signal is amplified and digitized and then split
and delayed using digital-signal-processing (DSP) techniques. As
The R6 far exceeds in the frequency-discriminator method, the delayed version of
Tempest (NSA 94- the signal is compared to the non-delayed version using a digital
106) requirements, mixer and the delay is adjusted to achieve quadrature. The mixer
the most stringent output is filtered to remove the sum component, leaving a base-
in the fields of
band component that is processed to produce a phase-noise value.
intelligence and
security. Its design
This method is suited to measurements of the high levels of
is cost-effective, compact and mobile, phase noise that are typically present in unstable signal sources,
while providing shielding effectiveness such as some high-frequency VCOs. It provides a wider mea-
comparable to an anechoic chamber. Each surement range than the reference-source/PLL method and
is custom-sized and fitted with an array of eliminates the need to reconnect the analog delay lines used in
exclusive features to keep your signals in the frequency-discriminator method. By setting the delay time to
and potentially damaging electromagnetic zero, the heterodyne digital discriminator method also enables
disturbances out. easy and accurate measurements of AM noise with the same
setup and RF connections. On the downside, the total dynamic
Learn more now at EquiptoElec.com or call us. range of this measurement method is limited by the performance
800-204-7225 Ext. 9 of the LNA and the analog-to-digital converters (ADCs).
630-859-7840 The two-channel cross-correlation phase-measurement ap-
email: sales@equiptoelec.com proach provides improved dynamic range compared to the het-
www.equiptoelec.com erodyne digital discriminator method. It employs two duplicate
Made with pride in the USA ISO 9001:2008 • RoHs Compliant reference-source/PLL channels with the measuring instrument
and calculates the cross-correlation between the two resulting

DESIGN &TECHNOLOGY
outputs (Fig. 7). Because any SUT noise of the number of correlations. For the
VALIDATING present in both channels is coherent, it two-channel cross-correlation method,
A TEST SETUP is not affected by the cross-correlation the number of correlation operations is
Once a measurement approach has computation. In contrast, any internal a key factor in determining the total mea-
been selected and a test solution noise generated by either channel is non- surement time. In a typical instrument,
assembled, how is it possible coherent and is diminished in the cross- the number of correlation operations is a
to know if the results provided correlation operation by the square root user-selected value. Increasing the num-
by a particular test system are
accurate? The answer: by using a
calibrated, precisely characterized
phase-noise signal. For example, a
known-good reference is valuable
when developing a direct-spectrum
solution that includes self-written
software that applies the necessary
corrections. Such a reference source
can be created by using uniform
noise as the FM input to a signal
generator. The slope of the noise
sidebands will be constant at −20
dB/decade, and the desired sideband
level can be reached by varying the
deviation of the FM signal. Figure 8
shows a phase-noise-measurement
calibration example produced with
this FM-driven signal-generator
approach. It was produced with
a uniform noise signal frequency
modulated at 500 Hz. This calibration
signal yielded a measured phase-
noise value of −100 dBc/Hz offset 10
kHz from the carrier.
Phase noise is one of the most
important figures of merit for an RF/
microwave signal source. The phase-
noise performance of the source
« Excellence under extreme conditions»
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DESIGN
S G &TECHNOLOGY
C O OG
ber of correlation operations reduces the

Increasing the number of cross-correlation operations noise contribution from both channels
will reduce the level of non-coherent noise. (see table) but extends the time required
to complete the measurement.
Number of correlations 10 100 1000 10,000
Because it reduces measurement noise,
Noise reduction –5 dB –10 dB –15 dB –20 dB the two-channel cross-correlation tech-
nique is capable of achieving excellent
measurement sensitivity. Since it relies on
DSP techniques rather than analog signal
processing, the measurement sensitivity
Cover your bases is enhanced without requiring exception-

al performance from the measurement
with KRYTAR
hardware. The two-channel cross-corre-
lation technique also provides greater dy-
namic range than possible with the digital
discriminator method. The two-channel
cross-correlation approach is a good
choice when measuring the phase noise
of free-running oscillators, although it can
be used effectively for phase-noise mea-
Left unchecked,
short-term stability
can have deleterious
effects on electronics
systems that rely on
KRYTAR, Inc., founded in
extensive processing
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Products cover the DC to 67 GHz KRYTAR an enviable reputation in and stabilized high-frequency sources
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www.krytar.com trum approach can be implemented with
1288 Anvilwood Avenue • Sunnyvale, CA 94089 a general-purpose spectrum analyzer or
Toll FREE: +1.877.734.5999 • FAX: +1.408.734.3017 • E-mail: sales@krytar.com
signal analyzer equipped with an optional
phase-noise measurement application or

DESIGN &TECHNOLOGY
personality. In most cases, the measure- od. In the reference-source/PLL configu- analog delay line can measure very low
ment application automatically performs ration, this type of solution often has the phase-noise levels at offsets far from the
the required carrier and noise measure- performance and capabilities needed to carrier. The downside of the versatility
ments and then applies the necessary measure very low phase noise at offsets as provided by this approach is that setup
correction factors. The results may be close as 0.01 Hz when used with a high- and calibration are more complicated
presented as both a logarithmic phase- performance LO. In frequency-discrimi- than with the SSA- or signal-analyzer-
noise plot (in dBc/Hz versus logarithmic nator mode, a system configured with an based solutions. DE
frequency) and a table of phase-noise
values at specific offset frequencies from
a desired carrier frequency. This solution
typically works well when making phase-
noise measurements at offsets as close
as 10 Hz or 100 Hz from the carrier and
at offsets as far as 10 MHz from the car-
rier, which is a typical offset range used
throughout the RF/microwave industry
to characterize the phase noise of high-
frequency signal sources.
A benefit of performing phase-noise
measurements with a software applica-
tion or test personality and a general-pur-
pose instrument such as a spectrum ana-
lyzer is the availablity of the analyzer for
test requirements other than phase-noise
measurements. In addition, the cost of the
measurement setup is essentially spread
across any additional number of test ap-
plications possible with the spectrum or
signal analyzer.
For the more complex phase-detector
or cross-correlation methods, a dedicated
standalone or modular test solution is
typically needed and such a test system
may not be suitable for the variety of mea-
surements possible with a spectrum ana-
lyzer. For example, an instrument known
as a signal-source analyzer (SSA) has
been developed as a standalone solution
for measurements of phase noise and oth-
er signal source characteristics. At least
one commercially available SSA includes
low-noise reference sources, an extremely
low noise floor, and the DSP capabilities
necessary to implement the heterodyne
digital discriminator method and the
two-channel cross-correlation technique.
Such instruments are well-suited to mea-
surement offsets as close as 1 Hz and as
distant as 1 GHz. The dedicated function-
ality of an instrument like an SSA often
means easy operation, as well as simpli-
fied setup and calibration.
Some PC-based modular solutions can
be configured with an analog delay line
to implement phase-detector techniques
such as the reference-source/PLL meth-
od or the frequency-discriminator meth-

COVERSTORY
JACK BROWNE / TECHNICAL CONTRIBUTOR
Waveform Generators
Run To 50 GSamples/s
This pair of high-speed arbitrary waveform generators
provides the performance needed to create complex
signals for analog, digital, and optical testing to 20 GHz.
S
ignal creation is critical to in their ranges that can be captured or GHz. Random jitter for either generator
the design and analysis of defined. The extended high-frequency is 250 fs root mean square (RMS), with
a wide range of military performance of the generators is made total typical jitter of 10 ps at 125 Gb/s.
electronics systems, includ- possible by a 25-GSamples/s digital- The generous amounts of memory
ing for electronic-warfare to-analog converter (DAC) developed available with these signal sources en-
(EW), radar, and signal-intelligence by the Tektronix Component Solutions able the creation of advanced, long-run-
(SIGINT) systems. Traditional meth- group (www.component-solutions.tek. ning signal formats. For example, in the
ods of creating signals have relied on com). The DAC application-specific- single-channel model AWG70001A ar-
analog sources, which can require ad- integrated-circuit (ASIC) design was bitrary waveform generator, 16 GSam-
ditional hardware and software to cre- fabricated using the 8HP silicon-germa- ples of waveform memory supports 320
ate advanced modulated signals. With nium (SiGe) BiCMOS device process ms of waveform data at the full sam-
the new AWG70000 Series of pling rate of 50 GSamples/s. The
arbitrary waveform generators AWG70001A is equipped with 2
from Tektronix (www.tektronix. GSamples of memory as a stan-
com), however, an almost un- dard feature and 16 GSamples of
limited variety of highly accurate memory as an option, while the
signals can be created right from AWG70002A provides 2 GSam-
the front panels of these high- ples of memory as a standard fea-
speed instruments. They provide ture and 8 GSamples of memory
enough processing power and per channel as an option.
waveform memory to generate At the maximum sample rates
output waveforms up to 20 GHz of 50 and 25 GSamples/s for the
for defense electronics, serial AWG70001A and AWG70002A
communications systems analy- generators, the sin(x)/x 3-dB
sis, and even for coherent optical 1. The single-channel AWG70001A (top) and dual-channel rolloff point occurs at 11.1 GHz,
communication research. AWG70002A (bottom) arbitrary waveform generators with higher-frequency signals
The AWG70000 Series con- operate at sampling rates to 50 and 25 GSamples/s, produced at lower amplitude lev-
sists of the single-channel model respectively. els. For instance, the amplitude
AWG70001A (Fig. 1, top) and flatness for both generators is
the dual-channel model AWG70002A from IBM (www.ibm.com). The 10-b within ±1.8 dB to 10 GHz, +1.8/−3.0
(Fig. 1, bottom). Both create signal vertical resolution translates into out- dB from 10 to 15 GHz. The single-chan-
waveforms with 10-b resolution, with standing signal dynamic-range perfor- nel model AWG70001A arbitrary wave-
as much as 16 GSamples of waveform mance, with both generators offering a form generator operates at sample rates
memory available to produce long spurious-free dynamic range (SFDR) of of 1.5 kSamples/s to 50 GSamples/s. It
signal sequences when necessary. Mod- −80 dBc or better (Fig. 2). can generate a maximum frequency of
el AWG70001A features sample rates For either generator, second-harmon- 20 GHz with an output amplitude range
to 50 GSamples/s with 16 GSamples ic levels are better than −60 dBc for out- of −8 to −2 dBm. It provides amplitude
memory on its one channel. The model put signals below 2 GHz. Second-har- resolution of 0.35 dB with amplitude ac-
AWG70002A divides that sampling monic levels are less than 50 dBc from curacy of 0.17 dB.
capability across its two channels for 2 to 6 GHz, and less than −42 dBc for The VSWR is 1.32:1 from DC to 5
sample rates as high as 25 GSamples/s signals above 6 GHz. Third harmonic GHz, 1.52:1 from 5 to 10 GHz, and
and 8 GSamples memory on each of levels are less than −60 dBc for outputs 1.73:1 from 10 to 20 GHz. The model
its channels. below 1 GHz, less than −50 dBc for out- AWG70001A arbitrary waveform gen-
These arbitrary waveform generators put signals from 1 to 2 GHz, and less erator has an analog bandwidth of 15
can essentially generate any signal with- than −40 dBc for output signals above 2 GHz and operates at bit rates to 12.5

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I I I I I
0.1 0.7 0.8 Frequency (GHz) 18 21
ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
IF/RF MICROWAVE COMPONENTS 440 rev M
coverstory
Gb/s. It delivers a rise/fall time of bet- range of −8 to −2 dBm. It offers 0.35-

ter than 23 ps for a sampling rate of 25 dB amplitude resolution with 0.17 dB
GSamples/s and beter than 27 ps for a amplitude accuracy and amplitude flat-
sampling rate of 50 GSamples/s. ness of +0.8/−1.5 dB to 10 GHz. Te
Te dual-channel model AW- AWG70002A exhibits VSWR of 1.61:1
G70002A provides a maximum fre- from DC to 5 GHz and 1.61:1 from 5 to
quency of 10 GHz with an amplitude 10 GHz, with an analog bandwidth of 2. Both the AWG70001A and AWG70002A
generators offer a spurious-free dynamic
range (SFDR) of −80 dBc or better.
13.5 GHz and bit rates to 6.25 Gb/s. It

An Uncompromising offers a rise/fall time of beter than 22
ps for a sampling rate of 25 GSamples/s.
Approach to Te skew between the AWG70002A’s

two channels is within ±5 ps. It provides
channel-to-channel output skew control
Ultimate Mission Success from −100 to +100 ps with 500 fs reso-
lution and ±5 ps accuracy and less than
5 ps intrachannel skew.
Te generators can be used to cre-
ate and simulate real-world signal en-
High Efficiency v Light Weight v Small Size vironments in a number of ways. Both
arbitrary waveform generators are fully
operational with or without an external
personal computer (PC), and can take
advantage of the company’s powerful
and flexible RFXpress® sofware.
In addition, the AWG70001A and
AWG70002A generators can use wave-
form vectors imported from third-party
sofware simulation tools to create and
playback complex waveforms. Signals
Employing multipurpose payloads including Give us a call to find out how our commitment captured on Tektronix oscilloscopes or
EO/IR, EW, SAR and others, UAVs can now transmit can support your mission success. It’s that simple.
real-time spectrum analyzers can also
complex information directly to troops in the field
v Uplink and Downlink Amplifiers be transferred to the AWG70001A and
while simultaneously sending the information half- • C, X, Ku, and Ka-Band
way around the world for analysis.
AWG70002A generators and played
• Power Amplifiers Up to 100 Watts back. With the aid of the company’s
CTT, Inc. continues its expansion of GaAs- and • Low-Noise Amplifiers 1–18 GHz
GaN-based solid-state amplifier products and v Power and Driver Amplifiers for SAR
RFXpress sofware (Fig. 3), captured
subassemblies designed to accommodate these • X thru Ka-Band signals can be edited and modified to
ever evolving requirements. • Up to 100 Watts meet a wide range of requirements.
CTT’s UAV experience includes participation in v Up Converters and Transceivers Either of the AWG70000A generators
data and video communication links on programs • C thru Ka-Band teamed with the RFXpress sofware can
including Shadow, Hunter, Predator/Reaper, • Compact, Space-Saving Designs produce RF, baseband, and intermedi-
Pioneer, Global Hawk and others. v Surface Terminal Amplifiers ate-frequency (IF) signals for system
• C thru Ku-Band
Building on this experience, CTT is well positioned • Up to 100 Watts test and analysis. Te sofware helps
to offer engineering and production technology v CDL and TCDL Subassemblies digitize and synthesis signals, providing
solutions – including high-rel manufacturing – in • IF and RF full modulation capabilities over the 20-
support of your complete UAV system requirements. • Digitally Controlled GHz bandwidth of the AWG70001A
More than twenty-five years ago CTT, Inc. source and the 10-GHz bandwidth of
made a strong commitment to serve the defense the AWG70002A. For fashioning pulsed
electronics market with a simple goal: quality, and modulated waveforms, the sofware
performance, reliability, service and on-time can command all the parameters needed
delivery of our products. to precisely generate a pulsed waveform;
these include start time, rise time, off
241 East Java Drive • Sunnyvale • California 94089 time, fall time, pulse width, droop, over-
Phone: 408-541-0596 • Fax: 408-541-0794 • www.cttinc.com • E-mail: sales@cttinc.com shoot, and ripple.
Te RFXpress sofware simplifies
S26 APRIL/MAY 2013 • defense electronics

generators can provide serial data sig- with 25 GSamples/s sampling rate on
nals to 12.5 Gb/s and can generate high- each channel) and up. DE
speed I/Q signals for testing optical sys-
tems. The instruments can be controlled Tektronix, Inc., 14150 SW Karl Braun
via front panel and remotely by Uni- Dr., P.O. Box 500, Beaverton, OR
versal Serial Bus (USB), Ethernet, and 97077; (503) (800) 833-9200, (503)
GPIB. P&A: $120,000 (AWG70002A 627-6497, www.tektronix.com.
3. This screen shows the graphical user

interface for the RFXpress software,
which can be used with the AWG70001A
and AWG70002A generators to create
a wide range of analog and digitally
modulated waveforms.
Reliable RF
the creation of complex radar signals,
including with step and nonlinear fre- power comes
quency modulation (FM); linear fre-
quency modulation (LFM); and Barker from precision
and polyphase codes. By teaming with
one of the arbitrary waveform genera- manufacturing.
tors, the RFXpress software can be used
to generate pulse trains with staggered
pulse repetition interval (PRI) to re-
solve range and Doppler ambiguity, fre-
quency hopping for electronic-counter-
measures (ECM) and electronic-coun- dB Control
ter-counter-measures (ECCM) applica-
tions. It can also support a wide range of delivers.
intra-modulation formats.
To simplify signal generation for radar
designs, the RFXpress software can be TWT AMPLIFIERS | M I C R O WAV E P O W E R M O D U L E S | POWER SUPPLIES
used with one of the generators and the
Radar Signal Creation software module.
This module enables operators to build
custom radar pulse suites starting from
pulse-to-pulse trains though complete
groups of pulsed waveforms. A number
of other modules are available for use
with the RFXpress software and the Reliable, tightly packaged high-voltage
arbitrary waveform generators, includ- transformers, TWTAs, MPMs and power
ing the Environmental Signal Creation supplies require precise assembly and
proprietary potting and encapsulation. +1 (510) 656-2325
module, which makes it possible to
emulate a complete RF environment, Since 1990, dB Control has designed, marketing@dBControl.com
manufac-tured, repaired and refurbished
to evaluate the performance of radar re- www.dBControl.com
the densest power supplies used by
ceivers in the presence of other signals.
military and commercial contractors for
For truly complex signal emulation,
mission-critical ground-based, shipborne
two or more of the AWG70000A arbi-
and high-altitude manned/unmanned
trary waveform generators can be syn- aircraft platforms. If your expectations are
chronized for linking multiple units to as high as your power requirements,
increase the channel count, as might be contact us today.
needed for testing some phased-array ra-
dar systems. In addition to their RF/mi-
© 2013 dB Control Corp. All rights reserved. Photos provided courtesy U.S. Air Force, U.S. Army and U.S. Navy.
crowave capabilities, the AWG70001A
and AWG70002A arbitrary waveform

PRODUCT FEATURE
Simulator Assists
The system’s computer is contained
within a wearable pack on the back of
the uniform, and the platform features
Infantry Training an integrated cable-management

system that can withstand hard use in
any training field. The ExpeditionDI also
employs a patent-pending hand-grip/
With its high-resolution head-mounted display, this controller unit that provides an intuitive
wearable simulation system allows trainees to be fully interface for locomotion within the
virtual environment. Those wearing
immersed in virtual scenarios.
the system hear the sounds of the
I
environment as well.
nfantry training is critical to ultimate The ExpeditionDI simulator is an
mission success in the field, and effective tool not only for military
modern electronic tools have trainees, but also for special security
made it possible to elevate the forces and civilian law-enforcement
education to a new level. One of the personnel. Among other programs,
better training simulators available it is currently part of the Dismounted
is ExpeditionDI® from Quantum3D Soldier Training System led by
(www.quantum3d.com), a wearable the Army’s Program Executive
turnkey simulation solution for US Army Office for Simulation, Training, and
infantry simulation and training. The Instrumentation (PEO STRI). Because
simulator’s open software architecture 1. The ExpeditionDI system is a fully worn the training system is portable and
enables integration of simulation and simulator that immerses a user in a virtual uses wireless communications and can
game software to create realistic battle world with audio and video information. be operated with a variety of different
scenarios in which those wearing the software tools, it can be used almost
simulator can freely act as individuals, accordingly. Because posture sensors anywhere and at any time. It can
but learn to behave as part of a team. are built into the leg strap, when a host a number of different simulation
The ExpeditionDI system is based trainee drops to a knee, his perspective software programs, including SVS from
on research performed by CG2 (www. on the virtual world changes. The Advanced Interactive Systems (www.
cg2.com), a wholly owned subsidiary tightly coupled HMD presents a 360- ais-sim.com), VBS2 from Bohemia
of Quantum3D. Research has shown deg. field of view with the participant Interactive (www.bistudio.com), and
that the most dangerous time for in the middle. The flexible simulator, RealWorld from Total Immersion
new warfighters is when they are in with an open architecture that allows Software (now Intific; www.totimm.
a new environment learning how to a variety of different simulation and com). In addition, Squad Kits are
handle weapons and different combat game software to be integrated into the available for group training and
situations. The ExpeditionDI system is controller, can be networked for larger- mission rehearsal. DE
designed to provide practical training scale exercises for joint forces training.
in almost any environment (Fig. 1), The uniform/system includes an audio Quantum3D, 5400 Hellyer Ave.,
using a hardware “weapon” in a virtual headset with microphone for realistic San Jose, CA 95138; (408) 600-
environment presented on a high- tactical communications and recording. 2500, FAX: (408) 600-2604, e-mail:
resolution display screen. The weapon Each ExpeditionDI is powered by a sales@quantum3d.com, www.
has a realistic shape, weight, and feel. hot-swappable battery for full mobility. quantum3d.com.
The uniform employs a 1280 ×
1024 pixel organic-light-emitting-diode
(OLED) head-mounted display (HMD) to
provide realistic images. The simulator
uses wireless connectivity to provide a
collective training environment for any
number of participants (Fig. 2).
Participants do not simply look at
a video screen but are immersed
in a simulated world, with senses
responding to audio and video
information. With the high-resolution
HMD, when a participant moves his 2. The ExpeditionDI simulation system can be used in groups with wireless connectivity,
head, the world he is viewing moves allowing coordinated exercises.

a rt
Sm
RF SWITCH MATRIX
New re
u
Feat
Switch position
indicator lights
Improve the efficiency of your test setup!

DC to 18 GHz from$385
Test multiple parameters or multiple DUTs in a single pass. aluminum cases house our patented mechanical
Quit constantly stopping to connect/disconnect cables! It switches, the only ones available anywhere, at any
sounds simple, but you’ll quickly appreciate all the “smarts” price, that offer up to 10 years /100 million cycles of
we built into our new switch matrices. The user-friendly guaranteed performance.† Just go to minicircuits.com
GUI gets you up and running in minutes right out of the for technical specifications, performance data, pricing,
box, for step-by-step control, full automation, or remote and real-time availability—or give us a call to discuss
operation via the internet. They’re fully compatible with any custom programming needs—and think how
almost any PC and most third-party lab software,* adding much time and money you can save!
capabilities to existing setups with ease! And the rugged Mini-Circuits...we’re redefining what VALUE is all about!
Model # Switches IL VSWR Isolation RF PMAX Price $

* See data sheet for an extensive list of compatible software.
(SPDT) (dB) (:1) ( dB) (W) (Qty. 1-9) †
The mechanical switches internal to each model are
30 day
USB-1SPDT-A18 1 0.25 1.2 80 10 385.00
offered with an optional 10 year extended warranty. MONEY-BACK
USB-2SPDT-A18 2 0.25 1.2 80 10 685.00 GUARANTEE!
Agreement required, see data sheets on our website for
USB-3SPDT-A18 3 0.25 1.2 80 10 980.00 See minicircuits.com/30day
terms and conditions. Switches protected by patents
USB-4SPDT-A18 4 0.25 1.2 80 10 1180.00 for details
5,272,458 6,650,210 6,414,577 7,633,361 7,843,289
NE W USB-8SPDT-A18 8 0.25 1.2 80 10 2495.00 and additional patents pending.
ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
489 rev L
PRODUCT FEATURE
to 26.5 GHz, 4.5 dB from 26.5 to 32.0
Switch Matrices GHz, and 6.0 dB from 32 to 40 GHz.

The VSWR is typically 1.50:1 from DC
Reconfigure To 40 GHz to 6 GHz, 2.0:1 from 6 to 18 GHz, and

2.5:1 from 18 to 40 GHz. The typical
isolation is 80 dB from DC to 6 GHz, 70
dB from 6 to 18 GHz, 60 dB from 18 to
These 5 x 5 and 10 x 10 offerings bring flexibility and 32 GHz, and 55 dB from 32 to 40 GHz.
performance to measurement applications that require The FX1000 series consists of 10 ×
10 switch matrices in 4U rack-mount
fast switching speeds and high reliability.
S
chassis, also with 1-W input rating and
witch matrices can greatly 10-ms switching speed. The series
enhance the productivity of a includes models FX1006 for use from
test-and-measurement system, DC to 6 GHz, FX1026 for applications
reliably routing input signals to from DC to 26.5 GHz, and FX1040 for
different output ports as needed. In use from DC to 40 GHz. As might be
terms of flexibility, the 5 × 5 switch expected, the electrical performance
matrices in the FX500 series and the 10 is somewhat degraded compared to
× 10 matrices in the FX1000 series— the smaller FX500 units, but still quite
both from SenarioTek (www.senariotek. good. The DC-to-40-GHz model FX1040
com)—offer a variety of different The FX500 series 5 x 5 switch matrices and exhibits insertion loss of 3 dB from DC
configurations for testing commercial the FX1000 series 10 x 10 switch matrices to 6 GHz, 4 dB from 6 to 18 GHz, 6 dB
and military applications. In addition, are available in rack-mount enclosures for from 18.0 to 26.5 GHz, 8 dB from 26.5
the firm recently announced the applications from DC through 40 GHz. to 32.0 GHz, and 10 dB from 32 to 40
extension of these FlexMatrix GHz. It has VSWR of 1.60:1
reconfigurable switch The FlexMatrix FX500 and FX1000 from DC to 6 GHz, 2.10:1
matrices to incorporate signal from 6 to 18 GHz, 2.60:1 from
conditioning when needed.
switch matrices at a glance. 18.0 to 26.5 GHz, and 2.70:1
The rack-mountable FX500 Model Configuration Frequency range from 26.5 to 40.0 GHz, with
and FX1000 switch matrices FX506 5x5 DC to 6 GHz typical isolation of 80 dB from
(see figure) are available FX526 5x5 DC to 26.5 GHz DC to 6 GHz, 70 dB from 6
in models that provide to 18 GHz, 60 dB from 18
FX540 5x5 DC to 40 GHz
frequency coverage of DC to to 32 GHz, and 55 dB from
6 GHz, DC to 26.5 GHz, and FX1006 10 x 10 DC to 6 GHz 32 to 40 GHz. For the other
DC to 40 GHz (see table). FX1026 10 x 10 DC to 26.5 GHz models, performance over the
The FlexMatrix expansion common frequency bands is
FX1040 10 x 10 DC to 40 GHz
ports on these reconfigurable quite similar.
units make it possible to The 6- and 26.5-GHz
expand them to a greater number model FX526, and the DC-to-40-GHz FX500 and FX1000 switch matrices
of ports, as needed. In addition, the model FX540. Typical performance for are outfitted with precision SMA
company recently announced that the the lowest-frequency switch matrix connectors, while the 40-GHz models
flexibility of these expansion ports includes insertion loss of 1.5 dB, VSWR have precision 2.92-mm connectors.
also makes it possible to add signal of 1.50:1, and isolation between ports The 40-GHz models are rated for
conditioning, such as an amplifier or of 80 dB across the full frequency operating lifetimes of 2 × 106 switching
filter, between a FlexMatrix input and range. The FX526 switch matrix has operations while the 6- and 26.5-GHz
output port without adding external typical insertion loss of 1.5 dB from DC models are rated for lifetimes of 10 ×
switching. This can help simplify testing to 6 GHz, 2.5 dB from 6 to 18 GHz, and 106 switching operations. The switch
of consumer wireless components as 3.5 dB from 18 to 26.5 GHz. The VSWR matrices offer front-panel light-
well as military communications and is 1.50:1 from DC to 6 GHz, 2.0:1 from emitting-diode (LED) position indicators
radar equipment. 6 to 18 GHz, and 2.5:1 from 18 to 26.5 and standard three-year warranties,
All FX500 series units are 5 × 5 GHz. The isolation is typically 80 dB and are available with LAN, GPIB, or
switch matrices with 1 W power- from DC to 6 GHz, 70 dB from 6 to 18 USB interfaces. DE
handling capability and 10-ms GHz, and 60 dB from 18 to 26.5 GHz.
switching speed, housed in a 2U-high The highest-frequency 5 × 5 switch SenarioTek, 3636 North Laughlin Rd.,
rack-mountable chassis. The FX500 matrix, model FX540, exhibits insertion Ste. 150, Santa Rosa, CA 95403; (707)
series consists of the DC-to-6-GHz loss of 1.5 dB from DC to 6 GHz, 2.5 544-2770, FAX: (866) 409-7626, sales@
model FX506, the DC-to-26.5-GHz dB from 6 to 18 GHz, 3.5 dB from 18 senariotek.com, www.senariotek.com.

NEWS SHORTS
High-Speed IR Satellite Joins
DAC Drives SBIRS Configuration
EW Systems
T
he second Space Based Infrared
System (SBIRS) Geosynchronous
T
ektronix Component Solutions Earth Orbit (GEO-2) spacecraft
(www.tektronix.com) has was encapsulated into its payload
developed a highly accurate, in preparation for its launch and
10-b digital-to-analog converter addition to the SBIRS missile-defense
(DAC) capable of operating at configuration. As mentioned on p. 22,
sampling rates to 25 Gsamples/s. this advanced infrared (IR) surveillance
This high-performance component satellite, developed by Lockheed
is key to the success of the arbitrary Martin (www.lockheedmartin.com),
waveform generators featured in will enhance the United States’ missile
this issue’s Cover Story (see p. warning capabilities while improving
24). The DAC is now available apart missile defense, intelligence, and
from the firm’s instrument products battlespace awareness. software. Lockheed Martin’s SBIRS
for use in defense, medical, The satellite (see figure) includes contracts include four HEO payloads,
commercial aerospace, and highly sophisticated scanning and four GEO satellites, and ground assets
coherent optical applications. staring sensors with improved IR to receive, process, and disseminate
The high-speed DAC (model sensitivity. Its scanning sensor will the infrared mission data. The firm has
TDAC-25), which is ideal for provide a wide area surveillance also begun procuring long lead parts for
electronic-warfare (EW) applications, of missile launches and natural the fifth and sixth GEO satellites. The
features a dynamic range exceeding phenomena across the earth, while SBIRS team is led by the Infrared Space
−60 dBc across its operating range. the staring sensor will be used to Systems Directorate at the US Air Force
The application-specific integrated observe smaller areas of interest Space and Missile Systems Center.
circuit (ASIC) supports direct with superior sensitivity. Lockheed Martin is the SBIRS prime
generation of wideband signals at The SBIRS includes a mix of contractor and Northrop Grumman is
bandwidths of 12 GHz and more. satellites in geosynchronous orbit, the payload integrator. The US Air
The DAC has already been designed hosted payloads in highly elliptical earth Force Space Command operates
into two next-generation systems (HEO) orbit, and ground hardware and the SBIRS system.
under development, including
the CHAMP-WB-DRFM, a VPX
module designed by the Defense
Solutions group of Curtiss-Wright
Controls Defense Solutions (www.
Armored Vehicles Require Costly Upgrades
A
cwcdefense.com). ccording to market research performed by industry analysis Visiongain
Tom Buzak, President of (www.visiongain.com), the global market for upgrades and retrofits to
Tektronix Component Solutions, armored vehicles will be worth $4.97 billion (USD). Annual spending on
notes that “this new DAC offering systems retrofitted to armored vehicles is expected to rise by 17.7% based
showcases the effectiveness on their 2012 levels. The report “Global Armored Vehicle Upgrade & Retrofit
of our development model. Our Market 2013-2023,” points to the need to improve vehicular performance
organization brings the expertise in Afghanistan and other locations. In spite of expected cuts in US defense
in ASIC design, chip packaging, spending, the nation is committed to programs worth more than 45% of the
and RF/microwave data converters global armored vehicle upgrade market in 2013.
needed to power new Tektronix The Visiongain report provides a detailed breakdown of the sources of
instrumentation. At the same time, growth and areas of contraction in the armored vehicle upgrade and retrofit
we’re able to make these advanced market, including detailed 10-year budget forecasts for the 20 largest national
capabilities and technologies countries. The financial research is backed by interviews with representatives
available to customers in non- from four key locations, including AmSafe (www.amsafe.com), Plasan (www.
competing industry segments, plasan.com), and Navistar Defense (www.navistardefense.com). The 185-
helping to solve their signal page report details trends and market projections within the armored vehicle
generation challenges and lower upgrade and retrofit market.
the cost of their systems.”

NEW PRODUCTS
Power Sensor Spans DC To 110 GHz
M odel R&S NRP-Z58 is a broadband pow-

er sensor that enables power
measurements over the con-
dB and includes a ball-bearing 1-mm coaxial
plug connector for ease of connection to
other test equipment. The sensor’s high
tinuous frequency range of DC frequency range makes it a suitable tool
to 110 GHz. The thermal sensor supports a for analyzing commercial automotive ap-
dynamic range from −35 to +20 dBm (55 dB) plications—such as cruise-control and collision-
and is capable of more than 300 measurements warning systems—at 77 GHz, as well as industrial
per second for production testing. With its integral Universal and military radar systems at 94 GHz.
Serial Bus (USB) connector, the sensor can be connected di- Rohde & Schwarz USA, Inc.
rectly to a personal computer (PC). It is also designed for use 8661A Robert Fulton Dr., Columbia, MD 21046-2265; (410) 910-
with any of the company’s signal generators, spectrum ana- 7800, FAX: (410) 910-7801; e-mail: info@rsa.rohde-schwarz.com,
lyzers, or network analyzers.The sensor offers linearity of 0.01 www.rohde-schwarz.com.
Phase Shifter Runs 18 To 40 GHz Amplifier Cuts Noise From 5 To 11 GHz
M odel 7929 is a digitally programmable phase shifter suit-

able for military airborne systems operating from 18 to
40 GHz. Over that frequency range, it provides a full 360-deg.
M odel CMD132P3 is a low-noise amplifier (LNA) that pro-
vides outstanding RF/microwave performance from 5
to 11 GHz. This offering is suitable for C- and X-band point-
phase shift with accuracy of ±15 deg. and maximum switching to-point and point-to-multipoint radios, as well as in military
time of better than 500 ns. It and space equipment. The LNA exhibits a low noise figure
uses 10-b transistor-transistor- of 1.3 dB across its frequency
logic (TTL) control to adjust range, with better than 20-dB
phase, boasting resolution as gain and an output 1-dB com-
fine as 0.35 deg. with guaran- pression point of +10 dBm. It
teed monotonic phase con- provides +13-dBm saturated
trol. The phase shifter handles output power and a third-order
signals to +20 dBm without intercept point of +22 dBm. In-
performance degradation, put return loss is typically 10
with insertion loss specified at dB and output return loss is
15 dB but more typically at 13 typically 15 dB. Housed in a RoHS-compliant, 3 × 3 mm QFN
dB across the wide frequency range. The component achieves plastic surface-mount package, the amplifier operates with a
typical input second-order and third-order intercept points of single voltage supply of +3.6 VDC and only 30 mA current. The
+60 and +35 dBm, respectively. The phase shifter is supplied 50-Ω matched design does not require external DC blocks or
in a hermetic package measuring 1.95 × 1.67 × 0.52 in. and matching components, and can be installed with a minimal
designed for an operating temperature range of −54 to +95ºC. number of external components other than bypass capacitors.
Herley General Microwave Custom MMIC
227A Michael Dr. Syosset, NY 11791; (516) 802-0900, FAX: 1 Park Dr., Unit 12, Westford, MA 01886; (978) 467-4290,
(516) 802-0897, e-mail: sales.newyork@herley.com, www. FAX: (978) 467-4294, e-mail: davef@custommmic.com, www.
herley.com. custommmic.com.
Power Amplifier Drives 6 To 18 GHz
M odel BHE69189-20 is a solid-state Class AB linear power

amplifier that provides output levels in excess of 20 W
from 6 to 18 GHz. Designed to work into a 2.0:1 load VSWR,
signal, the amplifier can be enabled or disabled in 2 microsec-
onds or less. The rack-mountable amplifier measures 19 × 22
× 3.5 in. and weighs 40 lbs. IIt is supplied with Type-N female
this rugged amplifier offers 25-W typical saturated output coaxial connectors, but available with SMA orTNC connectors
power; it boasts better than 41 dB (and typically 45-dB) gain as options.
with an output level of 20 W. The RF input overdrive level oc- Comtech PST
curs at +10 dBm. Second harmonics are −15 dBc, while third- 105 Baylis Rd., Melville, NY 11747; (631) 777-8900, FAX:
harmonic levels are at −30 dBc. Spurious output levels are at (631) 777-8877, e-mail: sales@comtechpst.com, www.
−60 dBc or less. Using a 5-V transistor-transistor-logic (TTL) comtechpst.com.

photo courtesy of the
U.S. Military & NASA
NEW
RUGGED ULTRA REL
®
CERAMIC AMPLIFIERS4
10 MHz to 6GHz High IP3 up to 38 dBm Low DC current 80 mA $ 95
ea. (qty 20)
When failure is not an option. Our new CMA amplifiers deliver Robust performance across wide bandwidths make them
incredible performance, in an incredibly rugged, nitrogen-filled ideal for instrumentation, or anywhere long-term reliability
hermetic LTCC design, just 0.045” high, that can only be found adds bottom-line value, in outdoor, industrial & commercial
at Mini-Circuits! These models are so tough, they’ve qualified applications. Go to minicircuits.com for all the details today,
for use under every test condition we’ve thrown at them: and get them in your hands as soon as tomorrow!
MIL Standard Qualifications (see website for complete list and details ) Electrical Specifications (-55 to +105°C )
Gross and Fine Leak HTOL ( 1700 hours + @ +105°C ) Model Freq. Gain POUT IP3 NF DC Price $ ea.
Mechanical Shock Thermal Shock (GHz) (dB) (dBm) (dBm) (dB) (V) (qty 20)
CMA
Vibration Steam Aging CMA-62+ 0.01-6 15 19 33 5 5 4.95
Acceleration Solder Heat Resistance CMA-63+ 0.01-6 20 18 32 4 5 4.95
3 x 3 x 1.14 mm CMA-545+ 0.05-6 15 20 37 1 3 4.95
PIND Autoclave ( and more ) RoHS compliant

®
ISO 9001 ISO 14001 AS 9100

U.S. Patents
7739260, 7761442
503 Rev Orig
NEW PRODUCTS
GaN Amp Drives Satcom Systems Pads Program Levels

From DC To 18 GHz
M odel XTSLIN-
100X-B1 is a
power amplifier with
GHz, using a 6950-
MHz local-oscillator
(LO) signal. The unit P rogrammable attenuators in the
PA series from RLC Electronics are
block upconverter is available with 60 available in coaxial housings for appli-
(BUC) based on to 68 dB factory- cations from DC to 18 GHz. Two basic
gallium-nitride (GaN) configurable small- models provide total attenuation ranges
device technology. The am- signal gain with ±0.5- of 0 to 15 dB in 1-dB steps (model PA124)
plifier delivers 100 W linear out- dB or better gain varia- and 0 to 70 dB in 10-dB steps (model PA-
put power from a compact housing tion over any 400-MHz operating 125). For example, PA-125 models can
measuring just 6.8 × 10.5 × 17.0 in. The frequency segment. be specified for frequency ranges as
amplifier provides efficient operation Comtech Xicom Technology, Inc. wide as DC to 18 GHz with maximum in-
for single- or multicarrier tactical sat- 3550 Bassett St., Santa Clara, CA 95054; sertion loss of 0.5 dB from DC to 5 GHz;
com systems. With its BUC, it handles (408) 213-3000, FAX: (408) 213-3001, 0.8 dB from 5.0 to 12.4 GHz; and 1.0 dB
input signals from 950 to 1450 MHz and e-mail: sales@xicomtech.com, www. from 12.4 to 18.0 GHz. These attenuators
provides output signals from 7.9 to 8.4 xicomtech.com. exhibit maximum VSWR of 1.50:1 from
DC to 5 GHz; 1.70:1 from 5.0 to 12.4 GHz;
Amplifiers Power Systems To 20 GHz and 1.80:1 from 12.4 to 18.0 GHz. The
rugged PA-125 attenuators are supplied
A pair of transistor amplifiers fromTriQuint Semiconductor serve commercial and

military communications applications through 20 GHz. Model TGA2579-FL is a
high-gain amplifier supplied in a 14-pin flange package. It delivers 32-dB small-sig-
with SMA female connectors. They use
attenuation cells of 10, 20, and 40 dB to
achieve the values of 10, 20, 30, 40, 50,
nal gain with +44-dBm saturated output power from 13.75 to 15.35 GHz. It features 60, and 70 dB, with accuracy of at least
a typical third-order intercept point of +48 dBm and 30% power-added efficiency. ±1 dB per cell. Both types are available
The amplifier incorporates low-loss ground- with TTL drivers, failsafe or latching op-
signal-ground (GSG) transitions and is supplied eration, and +12- or +28-VDC coils, and
in a lead-free and RoHS-compliant housing. in a choice of frequency ranges.
Designed for operating temperatures from −40 RLC Electronics, Inc.
to +85ºC, it runs on drain voltage of +25 VDC, 83 Radio Circle, Mount Kisco, NY 10549;
quiescent drain current of 1 A, and typical gate (914) 241-1334, (FAX: (914) 241-1753, e-
voltage of −3.4 VDC. The more broadband model mail: sales@rlcelectronics.com, www.
TGM2543-SM is a combination limiting amplifier rlcelectronics.com.
and low-noise amplifier (LNA) that can survive
CW input levels to 4 W from 4 to 20 GHz. This GaAs device varies gain by means of Combiner/Divider
its two gates, with typical electrical requirements that include drain voltage of +5 Goes Eight Ways
VDC, drain current of 100 mA, and voltage of −0.6 and +1.3 VDC at the two gates.
TriQuint Semiconductor, Inc.
2300 NE Brookwood Pkwy., Hillsboro, OR 97124; (503) 615-9000, FAX: (503) 615-8902,
e-mail: info-sales@tqs.com, www.triquint.com.
M odel D5829 is an eight-way power
combiner/divider rated for 400 W
CW power from 20 to 500 MHz. It fea-
tures at least 20-dB isolation between
ports, with maximum VSWR of 1.40:1.
ADVERTISERS’ INDEX The insertion loss is 0.75 dB or less
Advanced Circuits ............................................... S7 Mini Circuits/Sci Components ......................... S13 across the full frequency range. Phase
Agilent Technologies ......................................... S17 Mini Circuits/Sci Components ......................... S15 balance is ±5 deg. or better, while am-
AWR ..................................................................... IBC Mini Circuits/Sci Components ......................... S25 plitude balance is ±0.3 dB or better. The
rugged power combiner/divider mea-
Coilcraft ...............................................................IFC Mini Circuits/Sci Components ......................... S29
sures 12.00 × 7.75 × 2.25 in. with choice
CTT........................................................................ S26 Mini Circuits/Sci Components ......................... S33
of Type-N female connectors, SMA con-
Emerson Network Power ................................. S11 Nexyn Corporation ............................................ S18
nectors, or a combination of the two
Equipto Manufacturing .................................... S20 Phase Matrix ...................................................... S23 connector types.
Huber & Suhner ................................................. S21 PIC Wire & Cable ................................................ S5 Werlatone, Inc.
IMS 2013 ................................................................ S6 Signal Antenna Systems .................................. S19 17 Jon Barrett Rd., Patterson, NY 12563;
Krytar ................................................................... S22 TRM Microwave ................................................. BC (845) 278-2220, FAX: (845) 278-3440, e-
Microlambda ........................................................ S2 dB Controls ......................................................... S27 mail: sales@werlatone.com, www.wer-
Mini-Circuits/SCI Components ......................... S9 latone.com.

When you’re racing toward important
The AWR
targets, design performance is
paramount. Don’t let yourself be
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