2N5401

Amplifier Transistors
PNP Silicon

Features
• These are Pb−Free Devices*
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COLLECTOR
3
MAXIMUM RATINGS
Rating Symbol Value Unit 2
Collector − Emitter Voltage VCEO 150 Vdc BASE

Collector − Base Voltage VCBO 160 Vdc

1
Emitter − Base Voltage VEBO 5.0 Vdc
EMITTER
Collector Current − Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.5 W

Derate above 25°C 12 mW/°C TO−92
Operating and Storage Junction TJ, Tstg −55 to +150 °C CASE 29
Temperature Range STYLE 1

THERMAL CHARACTERISTICS 1
12 2
Characteristic Symbol Max Unit 3 3
STRAIGHT LEAD BENT LEAD
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
BULK PACK TAPE & REEL
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W AMMO PACK
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the MARKING DIAGRAM
Recommended Operating Conditions may affect device reliability.

2N
5401
AYWW G
G

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

August, 2012 − Rev. 4 2N5401/D
 2N5401

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 150 −

Collector−Base Breakdown Voltage V(BR)CBO 160 Vdc

(IC = 100 mAdc, IE = 0) −

Emitter−Base Breakdown Voltage V(BR)EBO Vdc

(IE = 10 mAdc, IC = 0) 5.0 −

Collector Cutoff Current ICBO

(VCB = 120 Vdc, IE = 0) − 50 nAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C) − 50 mAdc
Emitter Cutoff Current IEBO nAdc
(VEB = 3.0 Vdc, IC = 0) − 50

ON CHARACTERISTICS (Note 1)
DC Current Gain hFE −
(IC = 1.0 mAdc, VCE = 5.0 Vdc) 50 −
(IC = 10 mAdc, VCE = 5.0 Vdc) 60 240
(IC = 50 mAdc, VCE = 5.0 Vdc) 50 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) − 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.5
Base−Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) − 1.0
(IC = 50 mAdc, IB = 5.0 mAdc) − 1.0
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 100 300

Output Capacitance Cobo pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) − 6.0

Small−Signal Current Gain hfe −

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 40 200

Noise Figure NF dB
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) − 8.0
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION
Device Package Shipping†
2N5401G TO−92 5000 Unit / Bulk
(Pb−Free)

2N5401RLRAG TO−92 2000 / Tape & Reel

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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2
 2N5401

200

150
TJ = 125°C
h FE , CURRENT GAIN

100
25°C
70

50

-55°C
30 VCE = - 1.0 V
VCE = - 5.0 V

20
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
0.9
0.8
0.7
0.6
IC = 1.0 mA 10 mA 30 mA 100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

103 1.0
TJ = 25°C
VCE = 30 V 0.9
102
IC, COLLECTOR CURRENT (A)

0.8
μ

IC = ICES
V, VOLTAGE (VOLTS)

101 0.7
VBE(sat) @ IC/IB = 10
TJ = 125°C 0.6
100 0.5
75°C 0.4
10-1
0.3
REVERSE FORWARD
10-2 0.2 VCE(sat) @ IC/IB = 10
25°C
0.1
10-3 0
0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Cut−Off Region Figure 4. “On” Voltages

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 2N5401

2.5
θV, TEMPERATURE COEFFICIENT (mV/°C) TJ = - 55°C to 135°C
2.0
VBB VCC
1.5 +8.8 V -30 V
10.2 V
1.0
100 3.0 k RC
0.5 Vin
qVC for VCE(sat)
0 Vout
10 ms 0.25 mF RB
-0.5 INPUT PULSE
5.1 k
-1.0
tr, tf ≤ 10 ns Vin 100 1N914
-1.5 DUTY CYCLE = 1.0%
qVB for VBE(sat)
-2.0
-2.5 Values Shown are for IC @ 10 mA
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients Figure 6. Switching Time Test Circuit

100 1000
70 TJ = 25°C 700 IC/IB = 10
tr @ VCC = 120 V
50 500 TJ = 25°C

30 300
C, CAPACITANCE (pF)

tr @ VCC = 30 V
20 Cibo t, TIME (ns) 200

10 100
7.0 70
5.0 Cobo 50

3.0 30
2.0 20 td @ VBE(off) = 1.0 V
VCC = 120 V
1.0 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 7. Capacitances Figure 8. Turn−On Time

2000 1000
1s 1 ms 0.1 ms
1000 IC/IB = 10
IC, COLLECTOR CURRENT (mA)

tf @ VCC = 120 V 100 ms

700 TJ = 25°C
500 10 ms
100
tf @ VCC = 30 V
t, TIME (ns)

300
200
ts @ VCC = 120 V
100 10
70
50
Single Pulse Test
30
at TA = 25°C
20 1.0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 1.0 10 100 1000
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)

Figure 9. Turn−Off Time Figure 10. Safe Operating Area

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 2N5401

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

A B STRAIGHT LEAD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
BULK PACK Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X−X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---

A B BENT LEAD
NOTES:
R 1. DIMENSIONING AND TOLERANCING PER
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION:
AMMO PACK MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
P 4. LEAD DIMENSION IS UNCONTROLLED IN
T P AND BEYOND DIMENSION K MINIMUM.
SEATING
PLANE K MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19

X X D D 0.40 0.54
G 2.40 2.80
G J 0.39 0.50
J K 12.70 ---
N 2.04 2.66
V
C P 1.50 4.00
R 2.93 ---
SECTION X−X V 3.43 ---
1 N STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

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