2SA1083, 2SA1084, 2SA1085

Silicon PNP Epitaxial

Application

• Low frequency low noise amplifier

• Complementary pair with 2SC2545, 2SC2546 and 2SC2547

Outline

TO-92 (1)

1. Emitter
2. Collector
3. Base

3
2
1
2SA1083, 2SA1084, 2SA1085

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SA1083 2SA1084 2SA1085 Unit
Collector to base voltage VCBO –60 –90 –120 V
Collector to emitter voltage VCEO –60 –90 –120 V
Emitter to base voltage VEBO –5 –5 –5 V
Collector current IC –100 –100 –100 mA
Emitter current IE 100 100 100 mA
Collector power dissipation PC 400 400 400 mW
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C

2
 2SA1083, 2SA1084, 2SA1085
Electrical Characteristics (Ta = 25°C)
2SA1083 2SA1084 2SA1085

Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions

Collector to base V(BR)CBO –60 — — –90 — — –120 — — V IC = –10 µA, IE = 0

breakdown voltage

Collector to emitter V(BR)CEO –60 — — –90 — — –120 — — V IC = –1 mA,

breakdown voltage RBE = ∞

Emitter to base V(BR)EBO –5 — — –5 — — –5 — — V IE = –10 µA, IC = 0

breakdown voltage

Collector cutoff current ICBO — — –0.1 — — –0.1 — — –0.1 µA VCB = –50 V, I E = 0

Emitter cutoff current IEBO — — –0.1 — — –0.1 — — –0.1 µA VEB = –2 V, IC = 0

DC current transfer ratio hFE*1 250 — 800 250 — 800 250 — 800 VCE = –12 V,
IC = –2 mA

Collector to emitter VCE(sat) — — –0.2 — — –0.2 — — –0.2 V IC = –10 mA,

saturation voltage IB = –1 mA

Base to emitter voltage VBE — –0.6 — — –0.6 — — –0.6 — V VCE = –12 V,

IC = –2 mA

Gain bandwidth product fT — 90 — — 90 — — 90 — MHz VCE = –12 V,

IC = –2 mA

Collector output Cob — 3.5 — — 3.5 — — 3.5 — pF VCB = –10 V, I E = 0,

capacitance f = 1 MHz

Noise voltage reffered en — 0.5 — — 0.5 — — 0.5 — nV/ VCE = –6V,

to input √Hz IC = –10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
Note: 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h FE as follows.
D E
250 to 500 400 to 800

3
2SA1083, 2SA1084, 2SA1085

Maximum Collector Dissipation Curve Typical Output Characteristics (1)

600 –50
40
Collector power dissipation PC (mW)

20
–1 –1 0
–10

Collector current IC (mA)

–40 –80

400 –60
–30 P
C =0
–40 .4 W
–20
200 –20 µA
–10

IB = 0

0 50 100 150 0 –4 –8 –12 –16 –20

Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)

Typical Output Characteristics (2) Typicaol Transfer Characteristics

–20 –10
–35
0

VCE = –12 V
–4

–30
–5
Collector Current IC (mA)
Collector current IC (mA)

–16
–25

–20 –2
–12
–15 –1.0
–8 –10 –0.5

–4 –5 µA
–0.2
IB = 0
–0.1
0 –4 –8 –12 –16 –20 0 –0.2 –0.4 –0.6 –0.8 –1.0
Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V)

4
 2SA1083, 2SA1084, 2SA1085

DC Current Transfer Ratio vs. Collector to Emitter Saturation

Collector Current Voltage vs. Collector Current
5,000 –1.0
VCE = –12 V

Collector to emitter saturation voltage

IC = 10 IB
Pulse
DC current teransfer ratio hFE

–0.5
2,000

1,000 –0.2

VCE(sat) (V)
500 –0.1

–0.05
200

100 –0.02

50 –0.01
–0.1 –0.3 –1.0 –3 –10 –30 –100 –1 –2 –5 –10 –20 –50 –100
Collector Current IC (mA) Collector Current IC (mA)

Base to Emitter Saturation Voltage Gain Bandwidth Product vs.

vs. Collector Current Collector Current
–10 2,000
IC = 10 IB VCE = –12 V
Gain bandwidth product fT (MHz)
Base to emitter saturation voltage

–5 1,000

500
–2
VBE(sat) (V)

–1.0 200

–0.5 100

50
–0.2

–0.1 20
–1 –2 –5 –10 –20 –50 –100 –1 –2 –5 –10 –20 –50 –100
Collector Current IC (mA) Collector Current IC (mA)

5
2SA1083, 2SA1084, 2SA1085
Collector Output Capacitance vs.
Collector to Base Voltage Contours of Constant Noise Figure (1)
100 100 VCE = –6 V
Collector output capacitance Cob (pF)

IE = 0

Singnal source resistance Rg (kΩ)

f = 1 MHz f = 1 kHz
50 30

10
20
3

10 1.0 NF = 0.5 dB
1
5 0.3
2
0.1 4

2 6
0.03
10
1 0.01
–0.5 –1.0 –2 –5 –10 –20 –50 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
Collector to Base Voltage VCB (V) Collector Current IC (mA)

Contours of Constant Noise Figure (2) Contours of Constant Noise Figure (3)
100 VCE = –6 V 100 VCE = –6 V
Singnal source resistance Rg (kΩ)

Singnal source resistance Rg (kΩ)

f = 120 Hz f = 10 Hz
30 30
10 10

3 3
NF = 0.5 dB
1.0 1.0
NF = 0.5 dB
12 4 6 10
0.3 1 2 4 6 0.3

0.1 0.1
10
0.03 0.03
0.01 0.01
–0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
Collector Current IC (mA) Collector Current IC (mA)

6
 Unit: mm

4.8 ± 0.3 3.8 ± 0.3

5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max
0.7

0.5 ± 0.1 0.5

1.27
2.54

Hitachi Code TO-92 (1)

JEDEC Conforms
EIAJ Conforms
Weight (reference value) 0.25 g
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