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6, JUNE 2018
Abstract — We present a computationally efficient or coupled cavity circuit as in many traveling wave tubes
method for the calculation of impedance matrices of a (TWTs).1 An electron beam interacts with the electromagnetic
large class of standing- and traveling-wave structures (EM) fields supported by the structure at gaps separated by
used in klystrons, traveling-wave tubes, and other
vacuum electronic (VE) devices. By treating the gaps drift spaces. RF power is coupled into and out of the structure
as “lumped ports,” this method avoids the time and by waveguides or coaxial couplers. The EM properties of
disk spaces consuming steps employed in [1], which both single-beam- and multiple beam circuit structures can
required postprocessing the electromagnetic fields from be described using this formulation.
a finite-element (FE) simulation. By applying analytical Use of an impedance matrix description of the physical
transformations to the impedance matrix, we show that it
may be cast in a form suitable for the large-signal 1-D and structure in place of lumped element models such as the
2-D beam-wave interaction codes CHRISTINE-CC [4], [5] Curnow model [2] for coupled cavity circuits or hybrid models
and TESLA-Z [1]. These transformations are formulated in that include transmission line sections for folded waveguide
a way to avoid numerical errors near structure resonance circuits [3] provides an accurate representation of the detailed
frequencies (singularity points). We also derive and apply effects of the full 3-D geometry and materials of the structure.
formulas by which the impedance matrix of a structure
may be constructed from the impedance matrices of Use of lumped element or hybrid models requires the user
its component parts, without additional FE simulations; to find values of the lumped element components (inductors
by inverting the algebraic operations, we show that the and capacitors) and transmission line properties such that
impedance matrix of a structure from which a selected the dispersion and impedance of the model circuits closely
subsection has been removed may also be computed. match those of the physical structure. Finding such values can
Application of these formulas greatly facilitates the
accurate calculation of the impedance matrices of large be a difficult, nonlinear algebraic, or transcendental problem
complex circuits that are difficult or impossible to model that may or may not have a solution. In addition, some
whole in a single FE simulation. common circuit features, such as high-loss regions, velocity
Index Terms — Impedance matrix, lumped port, vacuum tapers, severs, matching sections, and windows, which may
electronic (VE) device, wave port. be difficult or impossible to represent using a lumped element
model, may be modeled accurately using an impedance matrix.
I. I NTRODUCTION The impedance matrix, therefore, provides a mean by which
0018-9383 © 2018 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.
See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.
JABOTINSKI et al.: EFFICIENT CALCULATION OF IMPEDANCE MATRICES 2265
process since the EM fields must be saved during the run and II. C ALCULATION OF THE Z- M ATRIX
then readback from a hard disk or other storage device and The classical impedance (Z-) matrix for a passive network
processed. is defined by the linear relation V = Z I , where V is a vector
In this paper, which is an expansion of our IVEC 2017 con- of port voltages and I is a vector of port currents. As in [1],
ference paper of the same title [6], we present a more we consider the input and output ports and the interaction
computationally efficient method for computing the impedance gaps of a general VE device circuit to be generalized ports of
matrix that does not require any postprocessing of the EM a multiport network. The waveguide interfaces are defined as
fields. Depending on the specific structure, this method can “wave” ports and the gaps as “lumped” ports. The voltages and
be orders of magnitude faster than that of the method used currents at the ports are defined in terms of certain integrals
in [1]. over the electric and magnetic fields at the ports, in such a
Central to our method is the representation of each inter- way that the product of the voltage and current is the power
action gap as a “lumped port.” Lumped ports are idealized, flowing into the port. Different definitions of voltage and
infinitesimally thin current-carrying sheets, the ends of which current in terms of the fields will result in different values
are terminated on conducting surfaces in the simulation; one for the elements of Z.
can imagine the lumped port to be connected to an exter- A wave port in Analyst is defined as a simulation boundary
nal transmission line of some specified impedance, but this region representing a waveguide termination on which is
transmission line is not explicitly included in the simulation applied an outgoing wave boundary condition for a specified
domain. With wave ports defined at the input and output ports number of waveguide modes. The modal current on a wave
and lumped ports defined at the gaps, an FE code such as port is defined as the inward (into the simulation region)
HFSS or Analyst computes internally and automatically an flowing current in the walls of the waveguide. The modal
impedance matrix; no postprocessing is required. A feature voltage on a wave port is defined as V = 2P/I ∗ , where P
in Analyst, not available in HFSS, allows the user to define is the power flowing into the port and the asterisk denotes
cylindrical lumped ports required to represent the gaps in a complex conjugate.
cylindrical beam tunnel. Consequently, we have used Analyst A lumped port in Analyst is an infinitesimally thin current-
exclusively in this paper. carrying sheet internal to the simulation region and terminated
As a practical matter, the size of a structure for which the on electrical conductors. The electric current between the
Z-matrix may be accurately computed using any FE code is terminations flows through a set of filaments constituting the
limited by available computer memory. We demonstrate that sheet, which also produces magnetic field. The voltage at a
by an application of Kirchoff’s laws, it is possible to construct lumped port is defined as the average over the filaments. The
the impedance matrix of a large structure from the impedance voltage for each filament is given by the electric field integral
matrices of its component parts. For example, in order to along the current flowing in the filament on the port surface.
compute the impedance matrix of a TWT with a uniform By definition, Z i, j gives the voltage response of port i
periodic circuit and no sever, it is necessary to make only in response to a current excitation of port j assuming that
three runs of an FE code—one for the input waveguide and all ports, except the excited port, are terminated in open
coupler, one for a single circuit period, and one for the output circuits. The FE EM codes compute this model Z-matrix.
waveguide and coupler. The Z-matrix for the full structure, However, for the analysis of VE structures that involve inter-
no matter how many periods long, may be computed simply action of electron beam with the RF fields, we need different
from the impedance matrices of these three substructures, Z-matrices with matching terminations at the boundary
using the formulas provided below. (power) wave ports and open terminations at the internal
This paper is organized as follows. Section II gives the ports at the gaps. Two techniques for obtaining such structure
definition of the model impedance matrix, including definitions Z-matrix have been presented in [1] using the current sources
of the port voltage and current. We go on to explain how for gap excitation and in [6] using the model Z-matrix obtained
the modified impedance matrix required by the large-signal from EM simulation. The latter provides remarkably faster
codes CHRISTINE-CC and TESLA-Z may be obtained simply computation time. As described in [6], obtaining the structure
from the classical impedance matrix produced by Analyst. Z-matrix includes inversion of the model Z-matrix, inverted
Some of these results were discussed but not derived in [6]. matrix modification, and one more matrix inversion that yields
We give a numerical example in Section II, and show that the structure Z-matrix. The matrix inversion can lead to
the Z-matrix element values obtained using our method agree numerical errors near frequencies at which Z-matrix is singular
with those obtained from HFSS using the method described (noninvertible) that is near frequencies of the normal modes
in [1]. Section III contains the formulas for the Z-matrix of a of the structure with all ports open. We demonstrate below,
composite structure expressed in terms of the Z-matrices of its how to avoid these inaccuracies by using an explicit formula
component parts. We also provide the inverse of the joining in which inversion of Z is avoided.
formulas, which enable the computation of the Z-matrix of a We denote the classical impedance matrix computed
structure from which a substructure has been removed. This is by Analyst by Z A and the port voltages and currents
the first publication of these formulas; these were not included by V A and I A
in [6]. An application of the joining formula is illustrated in
an example. Section IV contains a brief summary. V A = Z A I A. (1)
2266 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 65, NO. 6, JUNE 2018
where the admittance matrix Y is given by III. Z-M ATRICES FOR J OINED AND
−1
Y = Z̃ + Y0 (6) S EPARATED S TRUCTURES
where Y0 is a diagonal matrix whose only nonzero values are RF structures with large numbers of coupled cells can
the characteristic admittances of the wave port modes, which be difficult or impossible to model accurately with 3-D FE
appear only in those rows corresponding to wave port indices. EM codes because of computer memory limitations, due to
The matrix Y is, therefore, the admittance matrix for the the requirement that the mesh be sufficiently fine to resolve
structure computed with matched loads at the wave ports and geometrical features adequately within each cell. For example,
short circuits at the lumped ports. It follows that Z = Y −1 is the simulation of the 27 gap power booster (Fig. 1) using
the impedance matrix for the structure computed with matched Analyst employed meshes of up to 528-K elements. High-gain
loads at the wave ports and open circuits at the lumped ports. TWT circuits, however, can be 50, 100, or even a few hundred
It is Z given in (5) that is required by the large-signal codes periods in length. The memory and runtime requirements
CHRISTINE-CC and TESLA-Z. for the computation of the Z-matrix of such a structure are
In [6], we arrived at the Y -matrix transformation (6) by enormous.
different approaches, which used the equivalent circuit of a Fortunately, it is possible to construct the impedance matrix
multiport network. of a structure by combining the impedance matrices of their
It follows from (5) and (6) that: composite parts; it is also possible by inverting the joining
equations to compute the impedance matrix of a structure from
Z = Z̃ (I N + Y0 Z̃ )−1 (7) which a substructure has been removed.
JABOTINSKI et al.: EFFICIENT CALCULATION OF IMPEDANCE MATRICES 2267
Fig. 3. Substructures have wave ports at the coupling slot and beam
tunnel planes and lumped ports at the gaps. The ports are highlighted in
violet.
Fig. 5. (a) Z11 of the structure on the right-hand side of Fig. 3, as calculated using (9) to combine the impedance matrices from separate Analyst
simulations of the substructures (blue line) and from a single Analyst simulation of the whole structure (red dots). Port 1 is the input waveguide port.
The frequency range starts at the lower cutoff frequency of the folded waveguide. (b) As in (a), for Z14 , port 1 is the input port; port 4 is the second
gap counted from the input port. (c) As in (a), for Z5,7 , wave port 5 is at the slot and lumped port 7 is at the nearest gap to port 5.
The application of Kirchoff’s laws is fully equivalent to accurate results. Each additional mode simply adds one addi-
matching EM fields (“mode matching”) at the junction ports. tional port (row and column) to the impedance matrices. The
We note that it is usually necessary to include more than sizes of the Z1 and Z2 matrices depend on the number of
one waveguide mode at the junction ports in order to obtain port modes retained in the analysis. For example, for three
JABOTINSKI et al.: EFFICIENT CALCULATION OF IMPEDANCE MATRICES 2269
where a and b are the waveguide dimensions and E 0 and H1 [10] B. D. O. Andersen and S. Vongpanitlerd, Network Analysis and Synthe-
are the peak transverse electric and magnetic fields. sis: A Modern Systems Theory Approach. Englewood Cliffs, NJ, USA:
Prentice-Hall, 1973, p. 548.
The current flowing into the circuit (same as flowing out)
is obtained by integrating the magnetic field along the interior
surface of the waveguide. We find
2a
IA = H1 . (A5) Vadim Jabotinski (M’11) received the M.Sc.
π degree in radio-physics and electronics from
The port voltage is inferred from the power and current Dnipro National University, Dnipro, Ukraine,
in 1983.
using V A = 2P/I A∗ , from which we find He has been with the Naval Research Labo-
πb ratory, Washington, DC, USA, since 2009. He
VA =
E0 . (A6) is currently a Senior Research Scientist with
4 Leidos, Reston, VA, USA.
It follows that the Analyst port impedance V A /I A for
the TE10 mode is:
π 2 b E0
ZA = . (A7)
8 a H1
The ratio E 0 /H1 is the wave impedance. It follows David Chernin received the Ph.D. degree in
from (A3) that: applied mathematics from Harvard University,
Cambridge, MA, USA, in 1976.
I VA π b Since 1984, he has been with Leidos (formerly
ξ ≡ A =
TE10
= (A8) Science Applications International Corporation),
I V 2 2a Reston, VA, USA, where he is currently a Senior
which is (3) in the text. It may be shown similarly that (A8) Staff Scientist.
holds for the TEn0 mode for any value of n.
ACKNOWLEDGMENT
The authors would like to thank Dr. J. DeFord and
Mr. B. Held of National Instruments/AWR, Mequon, WI,
USA, for assistance with Analyst. The views, opinions and/or Thomas M. Antonsen, Jr., (M’87–SM’02–F’12)
findings expressed are those of the authors and should not be received the Ph.D. degree from Cornell Univer-
sity, Ithaca, NY, USA, in 1977.
interpreted as representing the official views or policies of the He is currently a Professor of physics and an
Department of Defense or the U.S. Government. Approved for electrical and computer engineering and electro-
Public Release, Distribution Unlimited. physics with the University of Maryland, College
Park, MD, USA.
R EFERENCES
[1] I. A. Chernyavskiy, T. M. Antonsen, J. C. Rodgers, A. N. Vlasov,
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no. 5, pp. 671–675, Sep. 1965, doi: 10.1109/TMTT.1965.1126062. the Ph.D. degree in physics from Moscow State
[3] T. M. Antonsen, A. N. Vlasov, D. P. Chernin, I. A. Chernyavskiy, and University, Moscow, Russia, in 1987.
B. Levush, “Transmission line model for folded waveguide circuits,” He has been with the Naval Research Labora-
IEEE Trans. Electron Devices, vol. 60, no. 9, pp. 2906–2911, Sep. 2013, tory, Washington, DC, USA, since 2008, where
doi: 10.1109/TED.2013.2272659. he is currently the Head of the Theoretical and
[4] D. Chernin et al., “Large-signal multifrequency simulation of coupled- Computational Electromagnetic Section.
cavity TWTs,” IEEE Trans. Electron Devices, vol. 58, no. 4,
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in Proc. 15th IEEE Int. Vacuum Electron. Conf. (IVEC), Monterey, as a Volunteer Faculty of the U.S. Naval Acad-
CA, USA, vol. 24. Apr. 2014, pp. 125–126, doi: 10.1109/IVEC.2014. emy, Annapolis, MD, USA, where he teaches
6857521. and tutors a variety of physics and engineering
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JABOTINSKI et al.: EFFICIENT CALCULATION OF IMPEDANCE MATRICES 2271
Igor A. Chernyavskiy (M’05) received the Ph.D. Baruch Levush (F’01) received the Ph.D.
degree in physics from the Institute of High Cur- degree in plasma physics from Tel-Aviv Univer-
rent Electronics, Tomsk, Russia, in 1996. sity, Tel Aviv, Israel, in 1981.
Since 2011, he has been a Research Physicist In 1995, he joined the Naval Research Labo-
with the Naval Research Laboratory, Washing- ratory, Washington, DC, USA, as a Theory and
ton, DC, USA. Design Section Head. Since 2012, he has been
a Superintendent of the Electronics Science and
Technology Division.