2SJ295

Silicon P-Channel MOS FET

November 1996

Application
High speed power switching

Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
• Avalanche ratings

Outline

TO-220FM

D 1
2 3
1. Gate
G
2. Drain
3. Source

S
2SJ295
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID –30 A
1
Drain peak current ID(pulse)* –120 A
Body to drain diode reverse drain current IDR –30 A
3
Avalanche current IAP* –30 A
3
Avalanche energy EAR* 77 mJ
2
Channel dissipation Pch* 35 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω

2
 2SJ295
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown V(BR)DSS –60 — — V ID = –10 mA, VGS = 0
voltage
Gate to source breakdown V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0
voltage
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V
Ω
1
Static drain to source on state RDS(on) — 0.033 0.043 ID = –15 A, VGS = –10 V*
Ω
1
resistance — 0.045 0.06 ID = –15 A, VGS = –4 V*
1
Forward transfer admittance |yfs| 17 25 — S ID = –15 A, VDS = –10 V*
Input capacitance Ciss — 3300 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 1500 — pF f = 1 MHz
Reverse transfer capacitance Crss — 480 — pF
Turn-on delay time td(on) — 30 — ns ID = –15 A, VGS = –10 V,
Rise time tr — 170 — ns RL = 2 Ω
Turn-off delay time td(off) — 500 — ns
Fall time tf — 390 — ns
Body to drain diode forward VDF — –1.5 — V IF = –30 A, VGS = 0
voltage
Body to drain diode reverse trr — 200 — ns IF = –30 A, VGS = 0,
recovery time diF/dt = 50 A/µs
Note 1. Pulse test

See characteristic curves of 2SJ280

3
2SJ295
Power vs. Temperature Derating
60

Channel Dissipation Pch (W)

40

20

0 50 100 150
Case Temperature Tc (°C)

Maximum Safe Operation Area

–500
–300

–100
Drain Current I D ( A )

10
(o rea µs
n) 10
a
y R this

0
PW µs
DS

–30 1
d b in

D m
ite on

C = s
lim ati

O 10
is per

–10 pe m
O

ra s
tio (1
–3 n sh
(T ot
c )
=
Ta = 25 °C 25
–1 °C
)
–0.5
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage VDS ( V )
Normalized Transient Thermal Impedance γS (t)

Normalized Transient Thermal Impedance vs. Pulse Width

3
TC = 25°C
D=1
1.0
0.5

0.3 0.2
0.1 θch–c (t) = γS (t) · θch–c
0.1 θch–c = 3.57°C/W, TC = 25°C
0.05
PDM
0.02
0.03 D = PW
lse PW T
0.01 Pu
hot T
1S
0.01
10 µ 100 µ 1m 10 m 100 m 1 10
Pulse Width PW (s)

4
 2SJ295

When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.