nd

IKW40N120T2
TRENCHSTOP™ 2 Generation Series

Low Loss DuoPack : IGBT in 2nd generation TRENCHSTOP™

with soft, fast recovery anti-parallel Emitter Controlled Diode
C
 Best in class TO247
 Short circuit withstand time – 10s
 Designed for : G
- Frequency Converters E
- Uninterrupted Power Supply
 TRENCHSTOP™ 2nd generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
 Easy paralleling capability due to positive temperature coefficient in PG-TO-247-3

VCE(sat)
 Low EMI
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
 Qualified according to JEDEC1 for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package

IKW40N120T2 1200V 40A 1.75V 175C K40T1202 PG-TO-247-3

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current (Tj=150°C) IC A
2
TC = 25C 75
TC = 110C 40
Pulsed collector current, tp limited by Tjmax ICpuls 160
Turn off safe operating area - 160
VCE  1200V, Tj  175C
DC Diode forward current (Tj=150°C) IF
TC = 25C 752
TC = 110C 40
Diode pulsed current, tp limited by Tjmax IFpuls 160
Gate-emitter voltage VGE 20 V
3)
Short circuit withstand time tSC 10 s
VGE = 15V, VCC  600V, Tj,start  175C
Power dissipation Ptot 480 W
TC = 25C
Operating junction temperature Tj -40...+175 C
Storage temperature Tstg -55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Wavesoldering only, temperature on leads only

1
J-STD-020 and JESD-022
2
Limited by bond wire
3)
Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS 1 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.31 K/W
junction – case
Diode thermal resistance, RthJCD 0.53
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES V G E =0 V , I C = 5 0 0 µ A 1200 - - V
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=40A
T j =2 5  C - 1.75 2.2
T j =1 5 0  C - 2.25 -
T j =1 7 5  C - 2.3 -
Diode forward voltage VF V G E =0 V , I F =4 0 A
T j =2 5  C - 1.75 2.2
T j =1 5 0  C - 1.80 -
T j =1 7 5  C - 1.80 -
Gate-emitter threshold voltage VGE(th) I C = 1 . 5 m A , V C E =V G E 5.2 5.8 6.4
Zero gate voltage collector current ICES V C E =1 2 0 0 V , mA
V G E =0 V
T j =2 5  C - - 0.4
T j =1 5 0  C - - 4.0
T j =1 7 5  C - - 20
Gate-emitter leakage current IGES V C E =0 V , V G E = 2 0 V - - 200 nA
Transconductance gfs V C E =2 0 V , I C =4 0 A - 21 - S

IFAG IPC TD VLS 2 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

Dynamic Characteristic
Input capacitance Ciss V C E =2 5 V , - 2360 - pF
Output capacitance Coss V G E =0 V , - 230 -
Reverse transfer capacitance Crss f =1 M H z - 125 -
Gate charge QGate V C C =9 6 0 V , I C =4 0 A - 192 - nC
V G E =1 5 V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1) IC(SC) V G E =1 5 V , t S C 1 0 s - - A
VCC = 600V,
Tj, start = 2 5C 220
Tj. start = 1 75C 156

Switching Characteristic, Inductive Load, at Tj=25 C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5  C , - 33 - ns
Rise time tr V C C =6 0 0 V , I C =4 0 A , - 28 -
V G E =0 / 1 5 V ,
Turn-off delay time td(off) RG=12, - 314 -
Fall time tf L  2 ) =8 0 n H, - 94 -
Turn-on energy Eon C  2 ) =6 7 p F - 3.2 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode reverse - 2.05 -
Total switching energy Ets recovery. - 5.25 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5  C , - 285 - ns
Diode reverse recovery charge Qrr V R = 6 0 0 V , I F =4 0 A , - 3.3 µC
Diode peak reverse recovery current Irrm d i F / d t =9 5 0 A / s - 23 A
Diode peak rate of fall of reverse dirr/dt - 350 - A/s
recovery current during t b

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L  a n d Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS 3 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

Switching Characteristic, Inductive Load, at Tj=175 C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 7 5  C - 32 - ns
Rise time tr V C C =6 0 0 V , I C =4 0 A , - 28 -
V G E =0 / 1 5 V ,
Turn-off delay time td(off) RG= 12, - 405 -
Fall time tf L  1 ) =1 8 0 n H, - 195 -
Turn-on energy Eon C  1 ) =6 7 p F - 4.5 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode reverse - 3.8 -
Total switching energy Ets recovery. - 8.3 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 7 5  C - 480 - ns
Diode reverse recovery charge Qrr V R = 6 0 0 V , I F =4 0 A , - 6.6 - µC
Diode peak reverse recovery current Irrm d i F / d t =9 5 0 A / s - 31 - A
Diode peak rate of fall of reverse dirr/dt - 200 A/s
recovery current during t b

1)
Leakage inductance L  a n d Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS 4 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

tp=3µs
100A
160A

140A TC=80°C
10µs
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

120A
10A 50µs
100A

80A 150µs
TC=110°C
60A 500µs
Ic 1A

40A 20ms
Ic DC
20A

0A 0.1A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25C,
(Tj  175C, D = 0.5, VCE = 600V, Tj 175C;VGE=15V)
VGE = 0/+15V, RG = 12)

70A

400W
60A
IC, COLLECTOR CURRENT
POWER DISSIPATION

50A
300W

40A

200W 30A
Ptot,

20A
100W
10A

0W 0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Maximum power dissipation as a Figure 4. Maximum collector current as a
function of case temperature function of case temperature
(Tj  175C) (VGE  15V, Tj  175C)

IFAG IPC TD VLS 5 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

150A 150A

20V 20V
125A 125A VGE=17V
VGE=17V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 15V
100A 100A
13V 13V

11V 11V
75A 75A
9V 9V

7V 7V
50A 50A

25A 25A

0A 0A
0V 1V 2V 3V 4V 5V
0V 1V 2V 3V 4V 5V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE

140A
3.5V

120A
IC=80A
3.0V
IC, COLLECTOR CURRENT

100A
2.5V

80A
2.0V IC=40A

60A
1.5V
IC=20A
40A
1.0V
IC=8A
TJ=175°C
20A
25°C 0.5V

0A
0.0V
0V 2V 4V 6V 8V 10V 12V
-50°C 0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation
(VCE=20V) voltage as a function of junction
temperature
(VGE = 15V)

IFAG IPC TD VLS 6 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

1000ns

td(off) 1000 ns

td(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns tf

tf
100 ns
td(on)

10ns tr
td(on)

tr
10 ns

1ns
20A 40A 60A
   
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, VCE=600V, (inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, RG=12Ω, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
t, SWITCHING TIMES

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as a
function of junction temperature function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, (IC = 1.5mA)
IC=40A, RG=12Ω,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 7 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

*) Eon and Etsinclude losses *) Eon and Ets include losses

20.0mJ due to diode recovery due to diode recovery
Ets*
10.0 mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

Ets*
15.0mJ
7.5 mJ

Eon*
10.0mJ Eon*
5.0 mJ Eoff

5.0mJ Eoff
2.5 mJ

0.0mJ 0.0 mJ
   
20A 40A 60A
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses as Figure 14. Typical switching energy losses as a
a function of collector current function of gate resistor
(inductive load, TJ=175°C, VCE=600V, (inductive load, TJ=175°C, VCE=600V,
VGE=0/15V, RG=12Ω, VGE=0/15V, IC=40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses *) Eon and Ets include losses
due to diode recovery due to diode recovery
7.5mJ Ets*
10.0mJ
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

7.5mJ Eon*
5.0mJ
Eoff
Ets*
5.0mJ
Eon*
Eoff
2.5mJ

2.5mJ

0.0mJ 0.0mJ
0°C 50°C 100°C 150°C 400V 500V 600V 700V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses as Figure 16. Typical switching energy losses as
a function of junction temperature a function of collector emitter
(inductive load, VCE=600V, VGE=0/15V, voltage
IC=40A, RG=12Ω, (inductive load, TJ=175°C, VGE=0/15V,
Dynamic test circuit in Figure E) IC=40A, RG=12Ω,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 8 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

Ciss
15V
VGE, GATE-EMITTER VOLTAGE

240V 1nF

c, CAPACITANCE
960V
10V

Coss

5V

100pF Crss

0V
0nC 50nC 100nC 150nC 0V 10V 20V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of
(IC=40 A) collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT

15µs 300A
SHORT CIRCUIT WITHSTAND TIME

10µs 200A

5µs 100A
tSC,

0µs 0A
12V 14V 16V 18V 12V 14V 16V 18V
VGE, GATE-EMITTER VOLTAGE VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-emitter
(VCE=600V, start at TJ  175°C) voltage
(VCE  600V, Tj,start = 175C)

IFAG IPC TD VLS 9 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series
VCE, COLLECTOR-EMITTER VOLTAGE

VCE
600V 60A 60A 600V

IC, COLLECTOR CURRENT

IC
400V 40A 40A 400V

200V 20A 20A 200V

IC VCE
0V 0A 0A 0V
0us 0.4us 0.8us 1.2us 0us 0.4us 0.8us 1.2us

t, TIME t, TIME
Figure 21. Typical turn on behavior Figure 22. Typical turn off behavior
(VGE=0/15V, RG=12Ω, Tj = 175C, (VGE=15/0V, RG=12Ω, Tj = 175C,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL IMPEDANCE

ZthJC, TRANSIENT THERMAL IMPEDANCE

D=0.5

-1
10 K/W
0.2

0.1
R,(K/W) , (s)
0.05 0.064 3.67*10-4
0.074 3.92*10-3 R,(K/W) , (s)
0.162 1.92*10-2 0.112 2.80*10-4
-2 0.010 3.40*10-1 0.163 3.27*10-3
10 K/W
0.02 0.234 1.71*10-2
0.015 2.68*10-1
0.01 R1 R2

single pulse R1 R2

C 1 =  1 /R 1 C 2 =  2 /R 2

-3
C 1 =  1 /R 1 C 2 =  2 /R 2
10 K/W
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 23. IGBT transient thermal impedance Figure 24. Diode transient thermal impedance
(D = tp / T) as a function of pulse width
(D=tP/T)

IFAG IPC TD VLS 10 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

8µC
600ns
TJ=175°C

Qrr, REVERSE RECOVERY CHARGE

trr, REVERSE RECOVERY TIME

500ns
TJ=175°C 6µC

400ns

300ns 4µC
TJ=25°C

200ns
TJ=25°C
2µC
100ns

0ns 0µC
400A/µs 800A/µs 1200A/µs 1600A/µs 400A/µs 800A/µs 1200A/µs 1600A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as a Figure 24. Typical reverse recovery charge as
function of diode current slope a function of diode current slope
(VR=600V, IF=40A, (VR=600V, IF=40A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

-1000A/µs
TJ=25°C
40A
TJ=175°C
REVERSE RECOVERY CURRENT

OF REVERSE RECOVERY CURRENT

35A
dirr/dt, DIODE PEAK RATE OF FALL

-800A/µs
TJ=175°C
30A
TJ=25°C
25A -600A/µs

20A

-400A/µs
15A

10A
-200A/µs
Irr,

5A

0A
400A/µs 800A/µs 1200A/µs 1600A/µs -0A/µs
400A/µs 800A/µs 1200A/µs 1600A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current as Figure 26. Typical diode peak rate of fall of
a function of diode current slope reverse recovery current as a
(VR=600V, IF=40A, function of diode current slope
Dynamic test circuit in Figure E) (VR=600V, IF=40A,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 11 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

150A
2.5V
TJ = 25°C
125A IF=80A
175°C 2.0V

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

100A 40A

1.5V
20A
75A

1.0V 8A
50A

25A 0.5V

0A
0V 1V 2V 3V 0.0V
0°C 50°C 100°C 150°C
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as a Figure 28. Typical diode forward voltage as a
function of forward voltage function of junction temperature

IFAG IPC TD VLS 12 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

IFAG IPC TD VLS 13 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

1 2 n
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times TC

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses .

IFAG IPC TD VLS 14 Rev. 2.4 23.09.2014

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IKW40N120T2
TRENCHSTOP™ 2 Generation Series

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.

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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS 15 Rev. 2.4 23.09.2014