SEMICONDUCTOR KF9N25D

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for DC/DC Converters C D L
A 6.60 +_ 0.20
and switching mode power supplies. B _ 0.20
6.10 +
C 5.34 +_ 0.30
D _ 0.20
0.70 +
E 2.70 +_ 0.15
FEATURES B
F _ 0.10
2.30 +
・VDSS= 250V, ID= 7.5A G 0.96 MAX
H 0.90 MAX
H
・Drain-Source ON Resistance : RDS(ON)=0.4Ω @VGS = 10V J
E J _ 0.20
1.80 +
G N K _ 0.10
2.30 +
・Qg(typ) = 14.5nC L 0.50 +_ 0.10
F F M M _ 0.10
0.50 +
N 0.70 MIN
O 0.1 MAX

MAXIMUM RATING (Ta=25℃) 1 2 3 1. GATE

2. DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE

O
Drain-Source Voltage VDSS 250 V
Gate-Source Voltage VGSS ±30 V
@TC=25℃ 7.5
ID DPAK (1)
Drain Current @TC=100℃ 4.74 A
Pulsed (Note1) IDP 25
Single Pulsed Avalanche Energy EAS 126 mJ
(Note 2)
Repetitive Avalanche Energy EAR 4.0 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25℃ 54.3 W
PD
Dissipation Derate above 25℃ 0.43 W/℃
Maximum Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 2.3 ℃/W
Thermal Resistance, Junction-to-
RthJA 110 ℃/W
Ambient
* : Drain current limited by maximum junction temperature.

PIN CONNECTION

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ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250㎂ , VGS=0V 250 - - V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃ - 0.22 - V/℃
Drain Cut-off Current IDSS VDS=250V, VGS=0V, - - 10 ㎂
Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V
Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=3.75A - 0.31 0.40 Ω
Dynamic
Total Gate Charge Qg - 14.5 -
VDS=200V, ID=9A
Gate-Source Charge Qgs - 3.2 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 6.3 -
Turn-on Delay time td(on) - 15 -
VDD=125V
Turn-on Rise time tr - 25 -
ID=9A ns
Turn-off Delay time td(off) - 30 -
RG=25Ω (Note4,5)
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 560 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 96 - pF
Reverse Transfer Capacitance Crss - 15 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 9
VGS<Vth A
Pulsed Source Current ISP - - 36
Diode Forward Voltage VSD IS=7.5A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=9A, VGS=0V, - 160 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.95 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=3.6mH, IS=7.5A, VDD=50V, RG=25Ω, Starting Tj=25℃.
Note 3) IS≤9A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.

Marking

KF9N25
D 001 2

1 PRODUCT NAME

2 LOT NO

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Fig1. ID - VDS Fig2. ID - VGS

100
VDS=30V
VGS=10V
Drain Current ID (A)

Drain Current ID (A)

1
10
10 VGS=7V
TC=100 C

25 C
0
10
1 VGS=5V

-1
0.1 10
0.1 1 10 100 2 4 6 8 10

Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj Fig4. RDS(ON) - ID

Normalized Breakdown Voltage BVDSS

1.2 1.2
VGS = 0V
On - Resistance RDS(ON) (Ω)

IDS = 250
1.0
1.1
0.8

1.0 0.6 VGS=7V

0.4
VGS=10V
0.9
0.2

0.8 0
-100 -50 0 50 100 150 0 4 8 12 16 20 24

Junction Temperature Tj ( C ) Drain Current ID (A)

Fig5. IS - VSD Fig6. RDS(ON) - Tj

10
2 3.0
VGS =10V
Reverse Drain Current IS (A)

IDS = 3.75A
2.5
Normalized On Resistance

TC=100 C
10
1 2.0

25 C 1.5

10
0 1.0

0.5

-1 0.0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150

Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)

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Fig 7. C - VDS Fig8. Qg- VGS

104 12
ID=9A

Gate - Source Voltage VGS (V)

10
Capacitance (pF)

103 8
Ciss
6
VDS = 200V
Coss
102 4

2
Crss
101 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area Fig10. ID - Tj

102 Operation in this 12

area is limited by RDS(ON)
10µs 10
Drain Current ID (A)

Drain Current ID (A)

101 100µs
8
1ms

100 10ms 6

4
DC
10-1
Tc= 25 C 2
Tj = 150 C
2 Single pulse 0
10
100 101 102 103 25 50 75 100 125 150

Drain - Source Voltage VDS (V) Junction Temperature Tj ( C)

Fig11. Transient Thermal Response Curve

101
Transient Thermal Resistance

Duty=0.5
100
0.2

0.1

0.05 PDM

10-1 t1
0.02
t2
0.01
lse
Pu
gle - Duty Factor, D= t1/t2
Sin
Tj(max) - Tc
- RthJC =
PD
10-2
10-5 10-4 10-3 10-2 10-1 100 101

TIME (sec)

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Fig12. Gate Charge

VGS

10 V
Fast
Recovery
ID Diode

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig13. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig14. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

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Fig15. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
IF (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

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