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  • Catlog Tranzistoare Cu Siliciu Iprs Baneasa

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    Parameter Specification

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    Parameter Specification

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    © All Rights Reserved
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    155 vizualizări803 pagini

    Catlog Tranzistoare Cu Siliciu Iprs Baneasa

    Încărcat de

    hamatdumitru_6219055
    Parameter Specification

    Drepturi de autor:

    © All Rights Reserved
    Descărcați ca PDF sau citiți online pe Scribd
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    din 803
    Je oy as : e TRANSISTORS 3 woe CU. SILICTU~ SILICON Tes LP.R.S.-BANEASA TRANZISTOARE CU SILICIU SILICON TRANSISTORS 1989 Acest catalog a fost elaborat in cadrul Intreprinderii de Yiese Radio si Semiconductori Baneasa de: ing. T. DUNCA ing. D. RAIU --- coordonator ing. D. SDRULLA Au colaborat: C. BARGAUNAS ALINE! ing. G. C. SCU fiz. M. CIOBANU ing. D. CRACEA E. DUMITRU M. IVAN T. NEDELCU ing. V. ULIERU Informatiile din acest CATALOG au fost verificate cu atentie si se pot con- sidera reale si utile. Cu toate acestea, nu se asuma nici o Tesponsabilitate pentru eventualele omi- siuni sau inadvertente. In acelasi timp, LP.RS. — Baneasa nu raspunde de interpretarea gresita a in- formatiilor continute in acest CATALOG. Specificatiile componentelor electronize produse de I.P.R.S, sint supuse modificd- rilor. De asemenea, produzatorul are posibilita- tea, la cererea beneficiarilor, sa livreze componentele sale miisurate $i in alte conditii electrice sau mecano-climatice. The informations of this DATA BOOK has been carefully checked and is beli- ved to be true and reliable. However, no responsability is assumed for possible omissions or inaccuracies. In the same time, LP.RS. — Baneasa has no responsability in case of, wrons interpretation of informations contained in this DATA BOOK. Speciffications of electronic components manufactured by LP.R.S. ate subject to chanse, Also, the manufacturer has possibility, at custom demand, to deliver his com- ponents tested at any other electrical and mechanical conditions. UZ INTERN INTREPRINDEREA POLIGRAFICA CLUJ, Municipiul Cluj-Napoca, cd. nr, 442/1987 (2 TRANZISTOARE CU EFECT DE CIMP. . FIELD-EFFECT TRANSISTORS LOW POWER TRANSISTORS BC 107... ee ee BC WB... 2... BC IM... 2.0. BOI. .....- BOWL... eee BOI. ...-4. BCI ......- BC 4. ea eae BCW77...-... BC IB... eee BOIB.. 2... BOW... eee BC 250....... BOWL... eee BC 252 ....... RC 23... 7 we BO26 2.2... BOM... BC 22 ...--.- BC WF... . 04 BOMG.. ee BC 327 BC 32 2... 64 *DATE PRELIMINARE. BC 337 see S88 BATT... eww, 13 BC33B. 1... 58 ON O29... BC4IB. 1... + 61 2N 930 . BO 44... ee 61 BC 415, see 1 BC4G. Le. 6 1 BCSIG... 2... 69 TRANZISTOARE DE 21 BCSI7....... 72 INALTA FRECVENTA m4 BCS6. LL ee . 75 2 BOMT. LL. we. 75 Bes... 75 HIGH FREQUENCY BOSO.. 1. we 75 TRANSISTORS BC S50... . 75 BC 556... eee 79 BRIS... 2... 27° BCS87 =... 1... 79 BB UBT... BOSS... .... 7 BRIB... 2... BO SSB... ee 79 BF 17S....... BOSH... .... 2 BRIG... 2... ag BCY 58... ..-. 83) BF il... 1. 2 BCYS9.. 2.2... 83 Bria... . BOY 9... 2... 88 BFS... BY 7B... 2... 92 BF 198 SSSRBSSSRRRABS 5 a 50 50 50 50 BFW Or... 56 BFX 99...... 85 BFY90....... CUPRINS TABLE OF CONTENTS 123 147 147 151 154 157 162 162 166 166 169 169 172 177 181 191 PRELIMINARY DATA CUPRINS TABLE OF CONTENTS axNgie 2... 1. 205 ON 497 2 Le 208 2N 4958.2... 208 ON 4959 2... 208 2N 5109 2. ...- 2 2N 51098... .... 211 QN S1098B. 2... au ON 5829... 208 TRANZISTOANE DE COMUTATIE 2... 215 SWITCHING TRANSISTORS BSV1S....... 27 BSV16....... 217 BSVI7....... 27 BSV 89... 2... 222 BSV9....... 226 BSVSI.. 22... 230 BSW19 .... 2. 234 BSW21 ...... 238 BSW 721A... 238 BSW 22... 24 BSW 22A...... 241 BSX 12....... 24 BSX IA... .. 24g BSX 125 . se Bhd BSK 21... 6... 248 BSX45....... 282 BSX46....... 252 BSX'47....... 252 BSX 51... 257 BSX 5IA 2... 257 BSXS5IB...... 257 BSX 52 se 261 BSX 529A... 0. 261 BSX 52B....0. 261 2N 706 -...... 265 ON 708... 2... 268 QN 1613 22... 2N 26IGA.. eS QNAL 22. eee TRANZISTOARE DE MARE PUTERE . . - HIGH POWER TRANSISTORS iL 315 319 323 327 327 331 335 331 335 344 344 349 379 379 CUPRINS TABLE OF CONTENTS BD 68... 2... 399 BUR 608... .. + 49 BUX 40A.. BD GBA... .,. 399 BUR GOD ..... 453° BUX AIA... 1. BDY 29.....0- 403 BURSOG...... 457, BUX42A.. 2... BDY37....... 406 BUR8O7..,... 457 BUXS) ....., BDY7I......- 409 BUSHY ....., 460 BUX HO4.. 2... BUQ4.....04 42 BUSMA* ..... 460 BUR ANS... BU205......- 412 BUSIIBY ..... 460 BUX 80/6... .. | BU QA... 4 BUS IIA 2... 463 BUX 87... 2. BU26.. 1... . 412 BUS 11/6 2... . 43 BUX AL ..... BUM7. 2,0... 418 BUS 12% ...... 466 BUKSIID...... BU2B....... 418 BUS 12A" ..... 466 BUKS2 ...... BU2BA . 2... 422 BUS IZB* ..... 466 BUX 82/4. ..... BUM... 422 BUS 14% 2... 469 BUX 82/5...... BU209....... 418 BUS 126" 2... 469 BUX 826...... BU 3A... 1. 425 BUS I3* 2.2... 472 BUX 827. ....~. BU SAH 2... 428 BUS ISA* ..... 472 BUKSBI ...... BU 3%Aj5 ..... $8 BUSIBM® ..... 475 BUX BO...... BU 9264/6 2... 428 BUS 13/5" ..... 475 BUXM*....., BU 32647... .. 428 “BUS 13/6 ..... 475 BUK 84h... . BU 3264/8... a BUS 137" ..... 475 BURBS... BU 52% ....., » 431 BUS® 2... 478 BUX BE... : BU 526/42... 431 BUS M4A* . 2... 478 BUX BBY 2... BU 526/52... 431 BUS 44" 2... 481 pus Bese... BU 5266.1... aul BUS 14/5" 2... 481 pu pat BU 5267... 6. 431 BUS 46* 6... 8 BU 5296/8... 431 BUS 14/7* 2... 4g, BUX 86/7"... . BU 6B. 2... 435 BUTI... 2. 4g4 BUX 87* ©... BU COED ...... 499 BUTIAY 1... 484 BUM 87/9" 2... BU GOT... 2... 435 BUT INS® ©... . 487) or 1008"... BU 67D .. 2... 430 BUT 6S ©... 487 or dogs. BUGB......, 435 BUT U® 2... . 487 BU 6UED .. 2... 499 «BUW 22... 499 OT 100/65". ss BU 806" 2... 43° ~BUW 23"... 493 GT 1000/6"... Buse ....., 443 BUWUT. 2... 496 GT 100/77". 2... BU SIO. Ss 446 BUW 25... 499 CT 1008". 2... 58! BUM... ee 446 BUW 25/5% 2 2... 499° GT 100/9*. . 2... 883 BU 932......, 446 pow 26+ : BUR 606 ll tp BUW 2%. ee 502 GT 100/10"... , 533 BUR 60D |... a3 BOXWA ..... 505 CT 1S09*. 556 BUR 607 2... 4ag9 BURMA... . 2. 508 GT 1504". 2... 858 BUR 6O7D ..-.. 458 BUKI2A.,..,. SII GT 1505". ..... 858 * DATE PRELIMINARE PRELIMINARY DATA CUPRINS TABLE OF CONTENTS $66 SDM 50106... .. 584 TD 24/1... . + 608 566 SDM S011" ..... 58 TD265....... 608 556 SDM 5012" ...., 584 TD 608 666 SDM S013" 2... . 584 TD 608 856 SDM 5014" 2... «587 TD 608 559 SDM 50I5* .. .. 337 TD 608 559 «SDM 5016+ .,... 987 TD 612 559 SDM 50177... 587 «TD 62 $59 SDTOWML...... 890 TD Giz $89 SDT 9202... ... 390 TD Giz 559 SDT 9203... ...~. 590 TD 616 659 SDT 9204...... 590 YD Gis 559 SDT 9205. ..... 590 ‘TD 615 / + $62 SDT 9206,,.... 590 TD 615 or 4 : + 562 SPT 9207...... 590 TD 618 OT 4... 562 SDT 9208,..,.. 590 TD 621 GT 4006 66. 562 SDT 9209...... 89 TD G18 GT 400/ +. 562 SDT 9210,..... 599 TD 621 Gr 409; 562 SDT 9301...... 594 TD 618 OT 40099 2... 562 SDT 9302....., sot TD o2t GT 400/10... 2. 562 SDT 9303...... 594 TD 618 SDM 4001.2. ....- 566 SDT 9304...... 594 TD 621 SDM 4002...... 566 SDE 9305...... 594 2N 2a SDM 4003...... 566 SDT9306...... 594 2N 624 SDM 4004.0... . 569 SDT 9307...... 594 ON ze SDM 4005.00... 569 SDT 9308...... 594 ON : oz SDM 4006.20.02. 869 SDT 9309. ..... 504 ON 3054 2... 627 SUM 4010...... 572 TDI... .... 507 2N 3055... ... 630 SDM401L....., 572 TD162A ...... 597 2N8055H...... 630 SPM 40IZ...... 572 TD 2b 2... .. 597 2N3055W...... 630 SDM 4013.0... 572 TDI 2.2... 597 ON B0EB/L.. 2... 685 SDM 4014...... 573 TD 16271 ...... 597-9 3055/2... 633 SDM 4015.00... 875 TD 16... .... 601 2N 3055/3. . 633 SbM 4016. 2... 575 TD IGA... 21. 601 ON 3055/4. . 633 SDM 4017.0... . 87 TDI@B...... 601 on 3055/5. . 633 most omar 212) ge pte 21112) enn NOH. we SDB S00" 2... 578 TD 26t....... 605 2N 9055/7. + 638 SDM 500 22... 581 ‘TD 264A 60s 2N 3055/8... . - 633 SDM 5005" ..... 581 TD 264B ..... 605 2N 8055/9... ... 633 spM 5006" ..... 581 TD264C ...... 605 2N 3055/10 - 633 *DATE PRELIMINARE_____ ___-_. PRELIMINARY DATA 6 2N 3441 2N 3442, 2N 3771 2N 3772 2N 3773 2N 4347 2N 4348 2N 5294 2N 5296 2N 5298 2N 5490 2N 5492 aN 5494 aN 34960... 2N 5576* 2N 5576" . . 2N 5577* . 2N 5578 2. . 2N 5570 2. . 2N 5580* Qn 5871... ON S871... *DATE PRELIMINARE FOTO-TRANZISTOARE PHOTO-TRANSISTORS CUPRINS TABLE OF CONTENTS 724 R7 FT SIs*. 6... 2. 758 FT 3id#. oe 35) ‘TRANZISTOARE UNIJONCTIUNE . . . 739 UNISGNCEION TRANSISTORS 2N 266 ...... «TH QN 2647). 2. 2. . G41 0 NOUA ABORDANE CALITAJIG . . . .. 7S TIPURI NOI... . . 759 2N 3490 2. 765 2n 3440" 2... an 5418* 2. ON 5416* 2. 2N 5835 2... 2N 5836+ ON 6837* 2 2. ON 6338 A*. 2... 2N 6939 At... 2N 6340 Av... ON 641 AY... ON 6436 AY... 2N 6437 AY... ON 6138 At... CAPSUIE. 2... - 785 CASES PRELIMINARY DATA 7 INDEX ALFANUMERIC ALPHANUMERICAL INDEX 29 29 29 33 35 35 35 35 39 38 ‘BCY 58 BCY 59 BCY 78 BCY 79 BD 135 BCY 6. et 65 63 69 72 % 75 WD 6H... ee S91 BF 245 . eee 1S 75 DG. 2... 387 BE 247... 18 78 BDOG....... SOL BF 25¢....... 169 7 EDGY... .. 387° BF 255... 169 7 BDGB....... 391 BF 256... at 79 BDG9... 1... 387 BF 267 ..., 7 79 BDO6SO....... 301 BE 2S7E + 7 79 BDG6.......- 395 BRS... . . 87 79 BD GSA ...... 3985 BR290.... + 7 INDEX ALFANUMERIC BF 479*. 2... e BF S06 ...... BF S509 ....... BF 914 BFW 94* BSX 21.... * DATE PRELIMINARE 177 104 107 181 10 248 3 4a 8 = o aq 8 = a 446 BUR 606 BUR 606D . BUR 607 ...... BUR 6071) . BUR 6088... 2... BUR 608) BUR 806 . BUR 807 . BUS 11* BUS 11A* BUS 118: os BUS 1IM*. 2... BUS N*... ... BUS 127... 00. BUS 12A*. BUS 12B*. BUS 124%. BUS 12/6. 5.00. BUS BUS BUS BUS BUS 13/6". BUS 13/7". BUS BUS BUS BUS BUS BUS BUT BUT BUT BUT BUT BUW 22 . BUW 23". BUW 24". BUW 25" . ALPHANUMERICAL INDEX Amz 475 PRELIMINARY GATA DEX ALFANUMERIC ALPHANUMERICAL INDEX BUW 25/5¢ BUW 9... BUX WAL... 2. BUX UA... .- BUX IMA. ..... BUX 40A...... BUX 41A...... BUX #240. .00- BUX 8 ...... BUN 60/4. ..... BUX 6 ...... BUX S66"... BUX 86/7" «2... ct GT 1508". 2... *DATE PRELIMINARE_ 10 502 508 Sil $14 517 520 523 526 526 526 526 529 529 532 535 535 535 535 538 538 541 541 S4L 544 547 S47 847 556 GT 150/4*. 0. GT 1590/8". 2 OT 180/6*#. . GT 150/7*#. . 2 GT 150/8*¥. 2. we GT 1s. GT 150/10 2 2. GT 2509... 6. CT aso10 . 2... GT 400/32... GT 4004 2... GT 400/5 . GT 400/10 FT 10t¥. 2. ee FOQL. 1. eee SDM 4001. ..... SDM 4002... . . SDM 4006... 2... SDM 4010... 2. 559 562 761 76t SDM 4011. ..... 872 SDM 4012, .... 572 SDM 4013. ..... 572 SDM 4014. ..... 875 SDM 4015. ..... 575 SDM 4016... 575 SDM 4017.22... 875 SDM 5001¢ . 2... 578 SDM 5002... .. 878 SDM 5003 ..... 578 SDM 5004" . . 581 SDM 5008* ..... 581 SDM 5006" 2... . (581 SDM 5010 2... . (S84 SDM S01le 2... 584 SDM 5012 ..... 584 SDM 5013... .. 584 SDM 5014* . 587 SDM 5015" . + 587 SDM 5016* . . . 587 SDM 50177... .. 587 SDT 9201. ...., 590 SDT 9202...... 590 SDT 9203...... 590 SDT 92044...... 590 SDT 9205... ... 590 SDT 9206... .. 590 SDT 9207. ..... 590 SDT 9208. ..... 590 SDT 9209. . «+ 580 SDT 9210. . «. 590 SDT 9301. . .. 594 SDT 9302 . . . 594 SDT 9303 . . 594 SDT 9304. . 594 SDT 9305 . . 594 SDT 9306. . . 594 SDT 9307... ... 594 SDT 9308... ... 5O4 SDT 9309. . 594 TD 162......- 897 ._. PRELIMINARY DATA TD 1628 TD 264..-....- 605 QN 1487 2... we *DATE PRELIMINARE, 624 INDEX ALFANUMERIC ALPHANUMERICALS INDEX oN m1... QN 29044... we 2N 2005 2. wes 2N 2905 2N 2906 2N 29064 . ON 2007. 2N 29074 . 2N 3054. 2N 3055 tee ON 3055... oN 305W ON 3085/1... ..~. ON 90552. ...0. ON 3055/3... 0. ON 3055/4. ...004 331 335, 339 344 627 2N 3055/5 . . 2N 3055/6 2N 30557 . 2N 3055/8 . 2N 3055/9. 2N 3055/10 Qn gazoe . 2N 3440* | 2N 3441 2N 3442 2N 3771 2N 3772 2N 3773 2N 4347 2N 4348 2N 4957 2N 4958 2N 4959 2N 5020° 2N s021* 2N 5109 2N 51004. 2N 51098 2N 5294 2N 5296 2N 5298 2N 5415 2N 5416 2N 5490 2N 5492 2N 5494 2N 5496 2N 5575* 2N 5576" 2N 587; 2N 5578" 2N 5879° 2N 580° ON 589 2N 5835. 2N 5836 74 PRELIMINARY DATA x it ON 58744 ON 5874B.. 2N 6253 ON 624 2... ia INDEX ALFANUMERIC ALPHANUMERICAL INDEX ON 6261 2N 6262 2N 6263 QN 6264 ON 6274 2N 6275 2N 6276 2N 6277 2N 6338A* 2N 6339A" 2N 6340A° ON 63414 2N 6371 2N 6436A* 2N 6437A% 2N 6438A* ATE PRELIMINARE 690 693, 696 699 702 702 702 702 779 779 779 779 206 782 782 782 708 709 709 nAnmasa 4 2N 6653/1 2N 6653/2 2N 6653/3 ON 6653/4 2N 6654 2N 66544. . 2N 6654B QN 6654/1 2N 6654/2. . 2N 6654/3 . 72 712 nz 72 ns aS m5 718 718 718 718 724 721 721 ” 904 724 724 724, PRELIMINARY DATA TRANZISTOARE CU EFECT DE CIMP FIELD — EFFECT TRANSISTORS TRANZISTOARE CD SUACIU, CU EFECT DE GIMP, CU JONCTIONE, CANAL SILICON N_ CHANNEL FICLD-EFFECT TRANSISTORS ey TOS2 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Voc Tensiune dren’-poarta 30 Vv Drain-gate voltage Vos Tensiune dreni-sursa £30 Vv Drain-source voltage Ves; Tensiune poarta-surs& —30 Vv Gate-source voltage Io Curent de poart’& 10 mA Gate current Poot Putere totalé disipata (Ty < 25°C) 200 mW Total power dissipation Tye ‘Temperatura maxim a jonctiunii 125 °c Maximum junction temperature Ts Domeuiul temperaturilor de stocare | —55++150 °C Storage temperature range BF 245 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rupa Rezistenfa termic& jonctiune-ambiant | max. 500 °c Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) o~. ELECTRICAL CHARACTERISTICS parametr Min. Typ. Max. Unit. — — Vinrjess Tensiwne de strapungere poarta-sursa Gate-source breakdown voltage —Io =1 pA; Vns=0 30 v I— Tess Curent rezidual poarta-surs4 Gate-source cut-off current —Voes= 15 V; Vos =0 5 |aa Ipss Curent de dren de saturare Drain saturation current Q) Vos= 15 V; —Ves=0 BE 245 2 25 | mA BF 245 A 2 65 | mA BF 245 B 6 1s | mA BF 245 C 12 25 | mA s — Vos ott Tensiune de blocare poarta-surs4 Gate-source cut-off voltage Vog= 15 V3 In = 200 pA BF 245 0,5 8 Vv BF 245 A 0,5 22 |v : BF 245 B 1,6 38 |, Vv BF 245 C 3,2 75 1V Ye | Transconductanta direct& Forward transconductance Yos= 15 Vi —Vos=0;f=1kBz |30 mS fovts) Frecventa de taiere Cut-off frequency . (2) Vos=15 V; —Vos= 0; Wf 700 MHz CARACTERISTICI ELECTRICE (T, ELECTRICAL CHARACTERISTICS BF 245 = 25°C) (cont.) Porametru Min, Typ. Max Cait. | | Cy Capacitate de reactie | Reverse transfer capacitance Vps= 20 V; —Ves= 1 V; f=1 MHz Ld pF Ca Capacitate de intrare Input capacitance Vps= 20 V; —Vos=1 V; f=1 MHz 40 pF Cos Capacitatea de iesire Output capacitance Vos = 20 V; —Vos=1 V; f=1 MHz 16 pF Uy ty/T < 0.02; tp = 300ps @) Frecventa la care partea reali 2 admitantci de transfer direct scade cu 3 dB fati de valoa- tea de la 1 kHz. . ‘The frecquency at wich the real part of the forward transconductance falls by 3 dB rela~ tive to the value at ] kHz. 2 — Catalog LP.RS. Déneasa vol. Mt Ww BF 247 ‘TRANZISTOARE CU SILICIU, CU EFHCT DE er, CU JONOTTUNE, CANAL Nv jo os G ey Ss VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Voe Tensiune drena-poarta +25 Vv Drain-gate voltage Vos Tensiune drend-surs +25 v Drain-source voltage Ves Tensiune poarté-sursi. —25 Vv Gate-source voltage Ic Curent de poarta 10 mA Gate current “Prot Putere totalé disipat’ (T. < 25°C} 200 mW Total power dissipation Tye Temperatura maxim’ a jonctiunii 125 °C Maximum junction temperature Ts Domeniul temperaturilor de stocare ~—55++4150 °C Storage temperature range 1a BF 247 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruya _Rezistenfa termicd jonctiune-ambiant | max. 500 "cw Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (7, = 25°C) ELECTRICAL CHARACTERISTICS Parametra Parameter Min. Typ. Max.| Unit. ~ Verjess Tensiune de stripungere poarti-sursit Gate-source breakdown voltage —Ic¢=1 pA; Vos=0 30 — Toss Curent rezidual poarté-sursa Gate-source cut-off current —Ves= 15 V; Vps= 0 5 Toss Curent de drend de saturare Drain saturation current (1) Vos=15 V; —Ves=0 < B BF 247 10 300 BF 247 A | 30 80 BF 247 B | 60 140 BF 247 C 110 250 ~ Vosor Tensiune de blocare poarta-sursi Gate-source cut-off voltage Vos = 15 V; In = 200 pA BF 247 a, BF 247 A jl BF 247 B {3 BF 247 C 5, ¥a ! Transconductanfa directa j Forward transconductance 1 Vos = 15 V; —Ves = 0; | f=1 kHz 8 17 BEBE Ope Factor de amplificare in curent alternativ AC forward current transfer ratio Ig =2mA; Vee =5V; f= 1kHz ar. A er. B gr. C Frecventa de tranzitie Gain bandwidth product Vee =5V; Ic = 10 mA, fr = 100 MHz Capacitate colectat-baza Collector-base capacitance Ven = 10 V; £ = 1 MHz -cmitor - , : Min. Typ. Max.| Unit. | 105 Vv | 40 i - | 100 Poe Gk | 100 oe i i ' | 120 220, — | 180 460i — | 380 800 | -- i | i ! ! i : 125 260; — 1 240 500) — "450 200 | - i 1 > 250 | MHz | i ! | 6|pr ! BC 171, BC 172 LPR ® BC 173, BC 174 nAnnass OF CARACTERISTICL ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont.) remem Min. Typ. Max,| Unit. i i | | ONE Factor de zgomot ! Noise figure i Ic = 0,2 mA, Ver = 5 V, R, =2kQ, f = 30 Hz + 15 kHz : i | BC 173 4 i dB i 1 Te =0,2 mA, Ver = 5V, BC 171 10 | 4B Rea 20, f= 1 kHz BC 172 10 | 4B | = 200Hz BC 174 10 | dB | i I t @) “F< 0.02; tp = 03 ms TRANZISTOARE, CU SILICLU PRP PLANAI EPITAXIALE DE ¥OASA’ PRECVENTA SILICON PNP EPITAXIAL PLANAR AF TRANSISTORS BC 177, BC 178 VALORI LIMITA ABSOLUTA BO OBC BC ABSOLUTE MAXIMUM RATINGS 177-878-479 —Veno —-Tensiune colector-bazi (—In=0) SOV 30V 25V Collector-base voltage —Vero —‘Tensiune colector-emitor (—In= 0) [| 45V 25V 20V Collector-emitter voltage ~—Veno Tensiune emitor-bazi (—Ic = 0) 5 Vv Emitter-base woltage Ic Curent de colector 300 wA Collector current Tow Curent maxim de colector 200 mA Collector peak current —Ip Curent de baza 50 mA Base current Pret Putere totala disipata (T, <25°C) 300 mW Total power dissipation Tye Temperatura maxima a joncfiunii 375 °C Maximum junction temperature Ts Domeniultemperaturilor de stocare —55++175°C Storage temperature range BC 177, BC 178 BC 179 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS ' | Rag-a | Rare CARACTERISTIC] ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Reristenta termica joncfiune-ambiant Junctiou-ambient thermal resistance Rezistenfa termica jonctiune-capsula Junction-case thermal resistance max. 500 °C/W max. 200 °C/W Barainetre Min. Typ. wax Unit. | 1 ' | i + —Tepo Curent rezidual colector-bazé t : Collector-base cut-off current | Wp nd : 3 Ta = 150°C 4) pA i ! | —Visnycuo Tensiune de strapungere colector-bazi i ' Collector-base breakdown voltage Ie = 10 pA BC 177 50 iv BC 178 30 i ¥ Be 179 23 : Vv i —Vosxyceo Tensiune de strapungere colector- { : i emizor | : Collector-emitter Lreakdown voltage | : t : Q) Ip = 2m4 i : ! BOW? 1 45 ry | BC 173 {| 25 yo] BC 179 29 Vv | , —Vaneso Tensiune de strapungese emitor-bazi | i | i Emitter-base breakdown. voltage | | : —Ip=1pA 5 Vv | 40 BC 177, BC 178 BC 179 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parameuce Min. Typ. Max.) Unit. ” —Verset Tensiune de saturatie colector-emitor : : Collector-emitter saturation voltage : : a) —I¢ = 10 mA; —1, = 0,5 mA 200 | mV (1) —Ip = 100mA; —Ip =5mA 950 ' mV —Voar00 Tensiune bazi-emitor ' Base-emitter voltage : : Q) =Va=5V; —Ip=2mA 700; mV | hre Factor de amplificare in curent \ \ ' continua 1 1 DC forward current transfer ratio i —Te = 10 pA; —Vea =5V ‘ gr. gr. gt. Ie =2mA; —Ve=5V gr. gr. gr. gr. ' fr Frecvenfa de tranzitie : Gain bandwidth product | | i Ops Om a 8 —Vez = 5V; —Ip = 10 mA; : f = 100 MHz 130 MHz Coo Capacitate colector-bazi ' Collector-base capacitance | —Ves = 10V; f = i MHz 7\pF i NF Factor de zgomot : | Noise figure | ! —Ven = 5V; To = 200 uA; | | R, =2kQ; f= 1kH2 BC 177 } 10 | 4B Af = 200 Hz BC 178 | 10' dB; | —Vae =5V; —Ip = 200 pA; i | R, =2kOQ; f = 30 Hz...15 kHz \ BC 179 4, dB (1) tT < 0,02; tp = 0,3 ms 4 BC 177, BC 178 BC 179 CARACTERISTICL DE CUADRUPOL TWO PORT CHARACTERISTICS i | Rarametra Min. Typ. Max| Unit. j r 7 i Montaj in emitor comun | Common emitter configuration I= 2mA; — Ver =5V; | ; f=1kHz be Rezistenta de intrare | Short circuit input resistance i gr VI 104 2,2 | kQ | eA 12 4,5 | kQ | eB | 32 85 | ko i gr. 6 15 | kQ | Boe Conductanfa de iegire t Open circuit output conductance / gr. VI 40 | ps | gal 50 | pS gr. B 70 | ps ec 150 iS bee Factor de amplificare in curent alternativ | A.C, forward current transfer ratio | ge. vr | 75 150 | — | gr. 125 260! — ge. B 240 500 | - | gc | 450 900! — i 42 BC 177, BC 178 BC 179 20 TG Putere total disipata ‘Total power dissipation Rea F&A radiator (Without heat sink) Ruj—c Cu radiator infinit (With infinite heat sink) BC 250 TRANZISTOARR C0 SHL(CI¢ ENF. HEMAXIALE DE ACDIONNECYENTS, SILICON PNY EPITAXU\L PLANAR AP ‘TRANSISTORS PLANAR Storage temperature range TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS | —Vcxo} { Teusiune colector-emitor (—Iz = 0) 20Vv Collector-emitter voltage —Veso Tensiune emitor-bazi (—Ic¢ = 0) 4V Emitter-base voltage lox Curent de colector de virt 100 mA Collector peak current ~Iau Curent maxim de baz’ 20 mA Maximum base current Prot Putere totali disipata (1) 200 mW Total power dissipation AB Te Temperatura maxima a joncfiunii 150 °C Maximum junction temperature | Ts Domeniul temperaturilor de stocate | ~—55++150°C (1) ‘Terminatele menfinute pind la 2 nm de capsuld 1a Ty < 25°C At 2 mm from the case the leads kept at Ty < 25°C BC 250 CARACTERISTICI TERMICE ' THERMAL CHARACTERISTICS Ruj-s Rezisten}a Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS T . } Parametru Min. Typ. Max.| Unit. Parameter —Icuo Curent rezidual colector-emitor Collector-emitter cut-off current —Vee = 15 V 12; pA —Icao Curent rezidual colector-bazi i | | Collector-base cut-off current} | i —Ves = 15V 100 | na | ! t } i { ! | —Viexjceo Tensiune de strapungere colector- | emitor Collector-emitter breakdown voltage Q) -Ie =2mA 20 —Visxjgno Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage —Ig = 100 nA 4 iv —Veesat Tensiune de saturatie colector-emitor i Collector-emitter saturation voltage | | —I, = 10 mA, —Ip = 1 mA 03) V —Vorsat Tensiune de saturafie bazi-emitor : Base-emitter saturation voltage { —I, = 10 mA, —Ip = 1 mA 09,V BC 250 CANACTERISTIC] ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametra | Min. Typ. Max Parameter Unit. lrg Factor de amplificare in curent continua DC forward current transfer ratio Ie =1mA, —Veg = 1V gr A 35 100} — gr. B 80 250} — gr. € 200 600) — fy Frecvenfa de tranzifie Gain bandwidth product —Vee = 5 V, —Ip = 10 mA, f = 100 MHz 250 MHz @ 2 0,2; tp = 0,3 S02: tp = 0.8 ms BC 251, BC 252 BC 253, BC 256 TOANE CU GILICIO PNP PLANAR TRGASULE Do SODIOPREYESTL SELICON PNP EPITAXIAL PLANAR AF TRANSISTORS rn TO92 VALOR LIMITA ABSOLUTA BC BC BC BC ABSOLUTE JMAXIMUM RATINGS 251] 252 253 254 — Vczo Tensiune colector-emitor {~Iy = 0) 45 V 25 V 25 V 64V Collector-emitter voltage | — Vso ‘Tensiune emitor-baz4 (—Ic = 0) 4v ! Emitter-base voltage I ' Collector peak current 1 | — Inv Curent maxim de bazi Base peak current — tex Curent de colector de virf | 100 mA | 20 mA \ Put Putere totala disipata (1) 300 mW Total power dissipation Tye Temperatura maxima a joncfiunii 150 °C Maximum junction temperature —55+ +150 °C | . : | Ts Domeniul temperaturilor de stocare | Storage temperature range () Terminaiele wensiaute pind ie 2mm de le copsulé le Ty < 25°C 2 mm from the case the leads kept at Ty < 25°C a1 BC 251, BC 252 BC 253, BC 256 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS | Ruy-a _-Rezistenfa termic’ joncfiune-ambiant Junction-ambient thermal resistance max. 420 °C/W | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS | Parametru Parameter |} T { 5 — Iceo Curent rezidual colector-emitor { Collector-emitter cut-off current —Vee = 15 V 12] pA — Ices Curent rezidual colector-emitor Collector-emitter cut-off current Min. Typ. Max, Unit. —Veg =25V; —Vez =0 BC 252 15 | nA BC 253 15 | nA —Vee = 45 V; —Vag =0 BC 251 15 | nA —Vee = 64V; —Vaz =0 BC 256 15 | nA ~ Verjcxo Tensiune de stripungere colector- emitor Collector-emitter breakdown voltage () —Ie=2mA BC 251 | 45 iv : BC 252, BC 253 | 25 v j BC 256 64 Vv — Veweso Tensiune de stripungere emitor-baza Emitter-base breakdown voltage | —le = 100nA 4 Vv — Vent Tensiune de saturatie colector-emitor Collector-emitter saturation voltage Ie = 10mA; —In=1 m4 03) V — Vernet Tensiune de saturatie buzi-emitor | Base-emitter saturation voitage ~Ie = 10 mA, —Ip = 1 mA 09 | v &1 BC 251, BC 252 BC 253, BC 256 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS {eont.} Parametru . bef Parameter Min. Typ. Max. Unit. hee Factor de amplificare in curent i i continu I i DC forward current transfer ratio i I Ig = 10 pA; —Vee = 5V gr. A 40 io | gr. B | 100 io | gr. C | 100 ! Ie =2mA; —Van =5V gr A | 120 xf = | gr. B | 180 460; — $ gr. Cc | 380 soo; — - hte Factor de amplificare in curent i alternativ i AC forward current transfer ratio | —Ie =2mA; —Vee =5V; | f{=1kHz gt A 1 125 260! — gr. B 240 500 | — eC | 450 90) — fr Freeventa de tranzitie : | in bandwidth product : : cy =5V; —Ie = 10 mA; i f = 100 MHz 250 ; MHz NF Factor de zgomot ! Noise figure ! w2mA; —Vex = 5 V3 ! R =80He + 15k, | BC 253 4) 4B mA; —Veg = 5 V; = 1 kHz BC 251} | BC 252, BC 256 | 10 | 4B (2) % <2; ty = 0,3 ms 4 — Catalog LPR. vol. IT oo a BC 261, BC 262 LP RS. BC 263, BC 266 BANBASA TRANZISTOARE CL SILICIC PNP PLANAR EPITAXLALE DE SOAS FRECVENT! SULICON PMP EPITASUAL PLANAR AF Storage temperature ‘WRANAISTOES . E 2 G TO18 VALORI LIMITA ABSOLUTA BO BE BC BE ABSOLUTE MAXIMUM RATINGS 261 262 263 266 — Veso Tensiune colector-baza (—Ig = 0) 50V 30V 25V 70V Collector-base voltage 4 ' — Vero ‘Tensiune colector-emitor (—Is = 0) 45 V 25 V 20V 64V | Collector-emitter voltage | | — Vexo Tensiune emitor-bazi (—Ip = 0)] 5V 1 Enitter-base voltage | 16 Curent de colector 100 mA i Collector current | — Jee Curent maxim de colector 200 mA Collector peak current | | -Ib Curent de bazi ys 50 mA | Base current | | Pit Putere total disipat’ (Ta < 25°C) | 300 mW i ! Total power dissipation | Tp ‘Temperatura maxima a joncfiunii 175 °C i Maximum junction temperature | Ts Domeniul temperaturilor de stocare —55+4175 °C i 1 30 BC 261, BC 262 BC 263, BC 266 CARACTERISTICI TERMICE } ae Ie ad THERMAL CHARACTERISTICS * a Ruy-a Rezistenfa termicd joncfiune-ambiant max. 500°C/W Junction-ambient thermal resistance Riyy-c —- Rezistenta termicd joncfiune-capsula max. 200°C/W Junction-case thermal resistance CARACTERISTICI ELECTRICE (T, = 25°€) ELECTRICAL CHARACTERISTICS Parametru Parameter Min. Typ. Max.} Unit. —Tcso Curent rezidual colector-bazi Collector-base patel current — Vea = 20 V 10 | nA — Vea = 20 V; Ty = 150°C 4] pA —Visryso Tensiune de strapungere colector-bazé Collector-base breakdown voltage — Ts = 10 pA BC 261 | 50 v BC 262 | 30 Vv BC 263 | 25 v BC 266 7 Vv —Venjczo Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage Q) — Ic =2 mA BC 261 | 45 v BC 262 25 v BC 263 20 Vv BC 266 64 Vv 5 BC 261, BC 262 BC 263, BC 266 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametra Min. Typ. Max, Unit. | — Vesmeso Tensiune de strapungere emitor-baza : : Emitter-base breakdown voltage i —Ig=1 pA 5 Vv 1 — Veese Tensiune de saturafie colector-emitor 1 Colfector-emitter saturation voltage ) —Ig=10 mA; ~ Ip=0,5 mA 200 | mV (i) ~ Ie= 100 mA; — Ip =5 mA 950 | mV — Vaemm ‘Tensiune bazii-emitor Base-emitter voltage ()'— Vee=5 V; — Ip =2 mA 700 | mV 1 beg Factor de amplificare in curent | continuu DC forward current transfer ratio —Ic=10 pA; — Ve=5 V | eA 109 fo g. B - gr. C 100 - —Io=2 mA; — Va=5hV i gr. VI | 70 130} —~ aA 120 220; ~ gz. B | 180 460) — gc 330 300; — I fy Frecventa’de tranzitie ; i Gain bandwidth product — Ve=5V; — Ie = 10 mA; £= 100 MHz 130 MHz (1) ty/T < 6,02; tp = 0,3 ms 52 BC 261, BC 262 BC 263, BC 266 CARACTERISTICI ELECTRICE ‘(T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Min. Typ. Max.) Unit. j Parametru Parameter Ceso Capacitate colector-bazi Collector-base capacitance — Vea= 10 V; f=1 MHz NF Factor de zgomot Noise figure — Ve=5 Vi — I¢=200 pA R,=2 kQ; f=1 kHz BC 261 Af = 200 Hz BC 262 BC 266 — Vee= 5 V; — Io =200 pA; R= 2 kO; BC 263 .. 15 kHz i 5 x pF = 3 dB 10 | dB 4) dB CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS Parametru Parameter Montaj in emitor comun Common emitter configuration —~ Ig =2 mA; — Ve=5 V; ' f=1 kHz bie Rezistenta de intrare Short circuit input resistance ge. VI er. A g.B gc Min. Typ. Max.| Unit. | O4 2,2 | kQ 1,2 45 | kO 3,2 3,5 6 15 | kQ BC 261, BC 262 BC 263, BC 266 CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS (cont.) parametra [ati. Typ. Mex.| Unit. 1 Bee Conductanta de iesire | Open circuit output conductance gt. VI 40 | uS gr A 50 | uS gr. B 70 | pS gr. c 150 | aS 1 De Factor de amplificare in curent alternativ A.C. forward current transfer ratio er. VI 75 150 | — gA 125 260 | - eB | 240 500 | — gr. C 450 90) — z oP) i oft t 9 mw mM Arg Putere total disipatt Total power dissipation Ruy—a Pard radiator (Without beat sink) Beuj—c Cu radiator infinit (With infinite hent sink) 4 BANEASA TRANZISTOARE CU SULICIU PNP PLANAR spat j EPITAXIALE BE AUDIOFRECVENTA 3 SILICON PNP BPITAXIAL PLANAR AP PRANITORS a TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BC 327 BC 328 ~— Vous Tensiune colector-emitor (—Vaz == 0) 50V 30V Collector emitter voltage | — Vero Tensiune colector-emitor (— Ip = 0) | 45.V 20V Collector-emitter voltage | : — Vaso Tensiune emitor-baza (— I, = 0) 5Vv Emitter-base voltage —I_ Curent de colector 800 mA Collector current — Io Curent de colector de virf LA Collector peak current -— Is Curent de bazi 100 mA Base current Poor Putere totala disipata (1) 625 mW ‘Total power dissipation Ty Temperatura maxim’ a joncfiunii 150°C Maximum junction temperature | Ts Domeniul temperaturilor de stocare —55++4150°C Storage temperature range (1) Terminalele menfinute pind la 2mm de la capsuld la Ta < 25°C At 2mm from the case the leads kept at Ty < 25°C 53 BC 327, BC 328 CARACTERISTICL TERMICE THERMAL CHARACTERISTICS Rey-a Rezistent& termic’ jonctiune-ambiant 1) Junction-ambient thermal resistance | max. 250

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