PVSYST V6.

80 10/07/19 Page 1/1

Characteristics of a PV module
Manufacturer, model : znshine solar, ZXP6-72-330/1500V1960-992-35
Availability : Prod. Since 2019
Data source : Manufacturer 2019

STC power (manufacturer) Pnom 330 Wp Technology Si-poly

PVsyst TRIAL
Module size (W x L) 0.992 x 1.960 m² Rough module area Amodule 1.94 m²
Number of cells 1 x 72 Sensitive area (cells) Acells N/A m²

Specifications for the model (manufacturer or measurement data)

Reference temperature TRef 25 °C Reference irradiance GRef 1000 W/m²
Open circuit voltage Voc 46.8 V Short-circuit current Isc 9.16 A
Max. power point voltage Vmpp 37.5 V Max. power point current Impp 8.80 A
=> maximum power Pmpp 330.0 W Isc temperature coefficient muIsc 5.5 mA/°C

One-diode model parameters

Shunt resistance Rshunt 500 ohm Diode saturation current IoRef 0.089 nA
Serie resistance Rserie 0.33 ohm Voc temp. coefficient MuVoc -158 mV/°C
Diode quality factor Gamma 1.00
Specified Pmax temper. coeff. muPMaxR -0.40 %/°C Diode factor temper. coeff. muGamma -0.001 1/°C

PVsyst TRIAL
Reverse Bias Parameters, for use in behaviour of PV arrays under partial shadings or mismatch
Reverse characteristics (dark)
Number of by-pass diodes per module
BRev

Vmpp
3.20 mA/V²
3

38.3 V
(quadratic factor (per cell))
Direct voltage of by-pass diodes

Model results for standard conditions (STC: T=25°C, G=1000 W/m², AM=1.5)
Max. power point voltage Max. power point current Impp
-0.7 V

8.66 A
Maximum power Pmpp 331.5 Wc Power temper. coefficient muPmpp -0.39 %/°C
Efficiency(/ Module area) Eff_mod 17.0 % Fill factor FF 0.773
Efficiency(/ Cells area) Eff_cells N/A %

PV module: znshine solar, ZXP6-72-330/1500V1960-992-35

12

PVsyst TRIAL
Cells temp. = 25 °C

10
Incident Irrad. = 1000 W/m²
331.5 W

8
Incident Irrad. = 800 W/m²
265.8 W
Current [A]

6 Incident Irrad. = 600 W/m²

199.1 W

4 Incident Irrad. = 400 W/m² 131.7 W

PVsyst TRIAL
Incident Irrad. = 200 W/m² 64.3 W
2

0
0 10 20 30 40 50
Voltage [V]

PVsyst Evaluation mode