Power Transistors

2SC5294, 2SC5294A
Silicon NPN triple diffusion mesa type

For horizontal deflection output

Unit: mm

15.5±0.5 3.0±0.3
φ3.2±0.1
■ Features

4.5

10.0
5° 5°
● High breakdown voltage, and high reliability through the use of a

26.5±0.5
glass passivation layer

22.0±0.5
23.4
2.0 1.2
● High-speed switching
● Wide area of safe operation (ASO) 5°
5°
4.0
5°
2.0±0.2

2.0
18.6±0.5
■ Absolute Maximum Ratings (Ta=25˚C) 1.1±0.1
0.7±0.1
Parameter Symbol Ratings Unit
5.45±0.3 5.45±0.3
Collector to 2SC5294 1500
VCBO V

5.5±0.3
0.7±0.1
3.3±0.3
base voltage 2SC5294A 1600 5°

Collector to 2SC5294 1500

VCES V
base voltage 2SC5294A 1600

2.0
1 2 3 1:Base
Collector to emitter voltage VCEO 600 V 2:Collector
3:Emitter
Emitter to base voltage VEBO 5 V TOP–3E Full Pack Package
Peak collector current ICP 30 A
Collector current IC 20 A
Base current IB 10 A
Collector power TC=25°C 120
PC W
dissipation Ta=25°C 3.5
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C

■ Electrical Characteristics (TC=25˚C)

Parameter Symbol Conditions min typ max Unit
2SC5294 50
VCB = 1000V, IE = 0 µA
Collector cutoff 2SC5294A 50
ICBO
current 2SC5294 VCB = 1500V, IE = 0 1
mA
2SC5294A VCB = 1600V, IE = 0 1
Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA
Forward current transfer ratio hFE VCE = 5V, IC = 10A 5 12
Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 2.8A 3 V
Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 2.8A 1.5 V
Transition frequency fT VCE = 10V 3 MHz
Storage time tstg 1.5 2.5 µs
IC = 12A, IB1 = 2.4A, IB2 = –4.8A
Fall time tf 0.12 0.2 µs

1
Power Transistors 2SC5294, 2SC5294A

PC — Ta Area of safe operation (ASO) Area of safe operation, horizontal operation ASO
250 100 50
f=64kHz, TC<90˚C
(1) TC=Ta ICP t=100µs Area of safe operation with
Collector power dissipation PC (W)

(2) With a 100 × 100 × 2mm 10ms 1ms respect to the single pulse
Al heat sink IC overload curve at the time of
200 10 40
(PC=12W) switching ON, shutting down

Collector current IC (A)

Collector current IC (A)

(3) Without heat sink DC by the high voltage spark,
(PC=3.5W) holding down and like that,
during horizontal operation.
150 1 30

(1)

100 0.1 20

2SC5294A
50 0.01 10

2SC5294
(3)
(2) Non repetitive pulse
TC=25˚C <1mA
0 0.001 0
0 20 40 60 80 100 120 140 160 1 3 10 30 100 300 1000 0 500 1000 1500 2000
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V)