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Vacuum evaporation
Vacuum evaporation
• Material is heated to attain gaseous state
• Carried out under high vacuum (10-7 torr, or 10-4 ~10-5Pa)
• Advantages
– Films can be deposited at high rates (~0.5 µm/min)
– Low energy atoms (~0.1 eV) leave little surface damage
– Little residual gas and impurity contamination due to high vacuum
– No substrate heating
– Inexpensive
• Limitations
– Difficult to control alloy compounds
– Poor step coverage
– Nonuniformity of coverage over wafer or multiple wavers
• Materials
• Vacuum:
– 10-6 torr for medium quality films
• Cooling water
– Hearth
– Bell Jar
• Mechanical Shutter
– Evaporation rate is set by temperature of source, can
not be turned on and off rapidly. A mechanical shutter
allows control of start and stop times.
• Electrical Power
– Either high current or high voltage: typically 1-10kW
• Ceramics
– Graphitic Carbon (C): MP = 3700 °C
– Boron Nitride (BN): MP = 2500 °C
– Alumina (Al2O3) MP = 2030 °C
Resistive heating elements
Adsorption
• Physisorption:
– The impinging molecule loses kinetic energy to thermal
energy within some residence time, and the lower energy of
the molecule does not allow it to overcome the threshold that
is needed to escape
• Chemisorption:
– The impinging molecule loses its kinetic energy to a
chemical reaction which forms a chemical bond between it
and other substrate atoms.
Condensation
Condensation control
• Substrate heaters
– IR lamps from frontside
– Heater coils from backside
Kinetic theory of gases
• PV=nRT n=PV/RT concentration of gas
• At STP n ~ 2.7 x 1019 molecules/cm3
• Standard pressure
– 1 atm = 760 mmHg = 760 torr = 1.013 x 105 Pa
• Mean Free Path (λ): mean distance a molecule
travels before colliding with another molecule
λ= kT
2πpd 2
= 0.707
πd 2 n
Flux
• Can calculate the bombardment rate of molecules on the surface
(Flux) # of molecules per area per second
• Used to estimate the deposition rate
P 2.63 ×10 20 P
Φ= = (molecules / cm 2 ⋅ sec)
2πmkT MT
Insert sample
and heat
material
sources
Open shutters
Monitor
condensation
and
sublimation
Close
shutters
Remove
sample
Molecular Beam Epitaxy (MBE)
Sputter Station
E RF Sputter System
Disadvantage:
Uneven coverage
High defect or particulate concentration
Not well suited for large-scale film growth
Mechanisms and dependence on parameters not well understood
Less melting!
TARGET
(deposited on silicon)
Few
particulates!
for Nb: < 1 per cm-2
FILM
Optimization of PLD Parameters
Stationary substrate
Tangent rule: tan(β) = (1/2) tan (α) (when α is small; poor when α > 50º)
(Nieuwenhuizen and Haanstra, Philips Tech. Rev. 27 (1966) 87.)
Tait relationship: β = α –asin ((1-cos(α))/2) (when α is large)
(Tait, Smy, Brett, Thin Solid Films 226 (1993) 196.)
Glancing Angle Deposition (GLAD)