SEMICON TRUE OR FALSE 7.

  When no light is emitted from an LED, the forward current is

almost negligible and is called the dark current.

1.  The forward voltage across an LED is typically 0.7 V. A

True
.
A
True
. B
False
.
B
False
.

8.  With varactor diodes, junction capacitance varies with the

amount of forward-bias voltage. A
0.25 mA
2.  A photodiode is used in a reverse-bias position, and it will .
increase conduction as the light intensity increases. A
True
. B
A . 5.325  A
True
. B
False
. C
B . 1.065  A
False
.

9.  The ability to keep the reverse current essentially constant is D

. 10.425  A
the key feature of the zener diode.
3.  A tunnel diode has a negative-resistance characteristic.
A
True
A .
True
. 2.  A transistor amplifier has a voltage gain of 100. If the input
B voltage is 75 mV, the output voltage is:
False
B . A
False 1.33 V
. .

10.  An LED emits light when forward-biased. B

7.5 V
4.  Two types of reverse breakdown in a zener diode are .
avalanche and zener. A
True
. C
A 13.3 V
True .
. B
False
. D
B 15 V
False .
.

11.  The regulating ability of zener diodes depends on their ability to

operate in a forward-bias condition. 3.  Refer to this figure. If VCE = 0.2 V, IC(sat) is:
5.  Schottky diodes are used primarily in high-frequency and fast-
switching applications. A
True
.
A
True
. B
False
.
B
False
.

BJT
6.  OLEDs can be sprayed onto a substrate using an inkjet printer.
1.  Refer to this figure. Determine the minimum value of IB that will
A produce saturation.
True
.
A
0.05 mA
.
B
False
.
B
2.085 mA
.
 C D C
1.065 mA –9.2 V 0.011
. . .

D D
7.4 mA 90
. .
7.  When a transistor is used as a switch, it is stable in which two
distinct regions?
A
4.  What is the ratio of IC to IB? saturation and active 11.  Refer to this figure. The value of VCE is:
.
A
. DC B
active and cutoff
.
B
hFE
. C
saturation and cutoff
.
C
DC
. D
none of the above
.
D
. either  DC or hFE, but not  DC

8.  The term BJT is short for A

9.9 V
A .
5.  For normal operation of a pnp BJT, the base must be ________ base junction transistor.
.
with respect to the emitter and ________ with respect to the B
collector. 9.2 V
B .
binary junction transistor.
A .
positive, negative C
. 0.7 V
C .
both junction transistor.
B .
positive, positive D
. 19.3 V
D .
bipolar junction transistor.
C .
negative, positive
.
12. 
D What does   vary with?
negative, negative 9.  For a silicon transistor, when a base-emitter junction is forward- DC
.
biased, it has a nominal voltage drop of A
IC
A .
0.7 V.
.
6.  Refer to this figure. The value of VBC is: B
ºC
B .
0.3 V.
.
C
both IC and ºC
C .
0.2 V.
.
D
IC, but not ºC
D .
VCC.
.

13. 
A 10.  A BJT has an IB of 50  A and a  DC of 75; IC is:
9.2 V
. A certain transistor has IC = 15 mA and IB = 167  A;   is:
DC A
375 mA
A .
B 15
9.9 V .
.
B
37.5 mA
B .
C 167
–9.9 V .
.
 C B
3.75 mA
. .  / (
DC DC  + 1)

D C
0.375 mA DC
. .

D
. either   / (
DC DC  + 1) or  , but not 
DC DC
14.  Refer to this figure. The value of VBE is:

A 20. 
. 92 k
Refer to this figure. The value of  DC = 100 and VIN = 8 V.
Determine IC(sat).
B
. 9.1 M

C
. 100 k

D
A . 150 k
0.6 V
.

B
0.7 V 17. 
.
The value of  DC

C A
1.2 V is fixed for any particular transistor. A
. . 18 mA
.

D B
0.079 V varies with temperature. B
. . 7.92 mA
.

C C
varies with IC. 1.8 mA
. .
15.  What are the two types of bipolar junction transistors?
A D D
npn and pnp varies with temperature and IC.
. . . 8  A

B
pnn and nnp
.
18.  21.  Which of the following is true for an npn or pnp transistor?
C A transistor data sheet usually identifies   as
DC
ppn and nnp A
. A IE = IB + IC
hre. .
.
D
pts and stp B
. B IB = IC+ IE
hFE. .
.
C
C IC = IB + IE
16.  IC. .
.
In this circuit  DC  = 100 and VIN = 8 V. The value of RB that will
produce saturation is: D
D none of the above
VCE. .
.

22.  What is the order of doping, from heavily to lightly doped, for
19.  What is the ratio of IC to IE? each region?
A A base, collector, emitter
. DC
 .

26.  What is (are) general-purpose/small-signal transistors case

B
emitter, collector, base type(s)?
.
A
TO-18
C .
emitter, base, collector
.
B
TO-92
D .
collector, emitter, base
.
C
TO-39
. A
13.21 V
.
23.  In what range of voltages is the transistor in the linear region of D
its operation? TO-52
. B
12.51 V
A .
0 < VCE
. E. all of the above
C
0.7 V
B .
0.7 < VCE < VCE(max)
.
27.  What is (are) common fault(s) in a BJT-based circuit? D
9.4 V
C A .
VCE(max) > VCE opens or shorts internal to the transistor
. .

D B
none of the above open bias resistor(s)
. . BJT TRUE OR FALSE
C 1.  It is best to check a transistor in-circuit before removing it.
external opens and shorts on the circuit board
.
24.  The magnitude of dark current in a phototransistor usually falls A
in what range? True
D .
all of the above
A .
mA B
. False
.
B
μA 28.  The dc load line on a family of collector characteristic curves of
.
a transistor shows the
2.  A BJT consists of three regions: base, emitter, and collector.
C A
nA saturation region.
. . A
True
.
D B
pA cutoff region.
. . B
False
.
C
active region.
.
25.  A 35 mV signal is applied to the base of a properly biased
transistor with an r'e = 8   and RC = 1 k . The output signal 3.  BJT transistors are of two general types, npn and pnp.
D
voltage at the collector is: all of the above
. A
True
A .
3.5 V
.
B
29.  Refer to this figure. Determine the minimum value of VIN from False
B .
28.57 V the following that will saturate this transistor.
.

C
4.375 mV 4.  In saturation, both the base-collector and base-emitter junctions
.
are forward-biased.

D A
4.375 V True
. .
 B A C
False True Ohmmeter (VOM)
. . .

B D
False All of the above
. .
5. 
DC is the ratio of IC to IE.
A
True 11.  Phototransistors usually respond only to light in the red or 4.  For what kind of amplifications can the active region of the
.
infrared spectrum. common-emitter configuration be used?
B A A
False True Voltage
. . .

B B
False Current
. .
6.  PD(max) is usually specified at 25°C. For higher temperatures, the
value of PD(max) is greater.
C
Power
A .
True
. BJT DEVICES
D
All of the above
B .
False 1.  How much is the base-to-emitter voltage of a transistor in the
. "on" state?
A
0V
. 5.  In the active region, while the collector-base junction is
________-biased, the base-emitter is ________-biased.
B A
0.7 V forward, forward
. .
7.  Both junctions of a BJT should be forward-biased for linear
operation.
C B
0.7 mV forward, reverse
A . .
True
.
D C
Undefined reverse, forward
B . .
False
.
D
reverse, reverse
.
2.  How many layers of material does a transistor have?
8.  If maximum IC and maximum VCE are applied to a BJT,
A
maximum power dissipation will not be exceeded. 1
.
A 6.  A transistor can be checked using a(n) ________.
True
. B
2 A
. curve tracer
.
B
False
. C
3 B
. digital meter
.

D C
9.  4 ohmmeter
 DC = IE/IC . .
A
True D
. Any of the above
.
3.  Which of the following equipment can check the condition of a
B transistor?
False
.
A
Current tracer
. 7.  What range of resistor values would you get when checking a
transistor for forward- and reverse-biased conditions by an
B ohmmeter?
10.  Av   RC/r'e Digital display meter (DDM)
. A 100  to a few k , exceeding 100 k
 11.  An example of a pnp silicon transistor is a 2N4123.
. B
Common-emitter
A .
True
B .
. Exceeding 100 k , 100  to a few k C
Common-collector
B .
False
C .
. Exceeding 100 k , exceeding 100 k D
All of the above
.
D
100  to a few k , 100  to a few k 12.  Which of the following is (are) the terminal(s) of a transistor?
.
A
Emitter 15.  What does a reading of a large or small resistance in forward-
.
and reverse-biased conditions indicate when checking a
8.  Calculate minority current ICO if IC = 20.002 mA and IC majority = transistor using an ohmmeter?
B
20 mA. Base
. A
Faulty device
A .
. 20  A C
Collector
. B
Good device
B .
. 0.002  A D
All of the above
. C
Bad ohmmeter
C .
2 nA
.
D
13.  None of the above
D .
2  A Use this table of collector characteristics to calculate  ac  at
.
VCE = 15 V and IB = 30  A.

16. 
9.  What is (are) the component(s) of electrical characteristics on Determine the value of   when   = 100.
the specification sheets? A
1.01
A .
On
.
B
101
B .
Off
.
C
0.99
C .
Small-signal characteristics
.
D
Cannot be solved with the information provided
D .
All of the above
.
A
100
.
17.  Transistors are ________-terminal devices.
10.  In which region are both the collector-base and base-emitter B
106 A
junctions forward-biased? . 2
.
A
Active C
. 50 B
. 3
.
B
Cutoff D
. 400 C
. 4
.
C
Saturation
. D
5
14.  Which of the following configurations can a transistor set up? .
D
All of the above A
. Common-base
.
18. 
Calculate   at VCE = 15 V and IB = 30  A. .
dc

23.  What are the ranges of the ac input and output resistance for a
common-base configuration?
A
. 10  –100  , 50 k  –1 M

B
. 50 k  –1 M , 10   –100 

A C
100 . 10   –100 k , 50   –1 k
.

B D
116 None of the above
. .
A
200
C .
50
.
24.  What is the most frequently encountered transistor
B
180 configuration?
D .
110
. A
Common-base
C .
220
.
B
19.  Which of the following can be obtained from the last scale Common-collector
D .
factor of a curve tracer? None of the above
.
A C
hFE Common-emitter
. .

21.  D
B Emitter-collector
dc dc = ________ .
.
A
IB / IE
C .
ac
.
25. 
B
IC / IE  for this set of collector characteristics is within ________
dc
D .
. ac
percent of  .
ac
C
IC / IB
.

20.  D
Calculate   for IC = 15 mA and VCE = 5 V. None of the above
ac .

22.  How many carriers participate in the injection process of a

unipolar device?
A
1
.
A
2
B .
2
.
B
5
C .
0
.
C
7
D 3 .
 D C B
10 electrical characteristics pnp, npn
. . .

D C
All of the above npp, ppn
. .
26.  Which of the following regions is (are) part of the output
characteristics of a transistor?
D
nnp, pnp
A .
Active 30.  For a properly biased pnp transistor, let IC = 10 mA and IE =
.
10.2 mA. What is the level of IB?
B A
Cutoff 0.2 A 34.  What is the ratio of the total width to that of the center layer for
. .
a transistor?
C B A
Saturation 200 mA 1:15
. . .

D C B
All of the above 200  A 1:150
. . .

D C
20.2 mA 15:1
. .
27.  How many individual pnp silicon transistors can be housed in a
14-pin plastic dual-in-line package?
D
150:1
A .
4 31.  What is (are) the component(s) of most specification sheets
.
provided by the manufacturer?
B A
7 Maximum ratings 35.  Which component of the collector current IC is called the
. .
leakage current?
C B A
10 Thermal characteristics Majority
. . .

D C B
14 Electrical characteristics Independent
. . .

D C
All of the above Minority
. .
28.  In what decade was the first transistor created?
A D
1930s None of the above
. .
32. 
What is  dc  equal to?
B
1940s
. A
IB / IE
.
C
BJT DEVICES FILL IN THE BLANKS
1950s
. B
IC / IE
. 1.  The term bipolar reflects the fact that ________ and ________
D participate in the injection process into the oppositely polarized
1960s material.
. C
IC / IB
. A
holes, neutrons
.
D
29.  Most specification sheets are broken down into ________. None of the above
. B
holes, electrons
A .
maximum ratings
.
C
33.  List the types of bipolar junction transistors. neutrons, electrons
B .
thermal characteristics
. A
ppn, npn
. D None of the above
 9.  The doping of the sandwiched layer is ________ that of the
. . outer layers.

C A
much larger than considerably less than
. .
2.  In the saturation region the collector-base junction is ________-
biased and the base-emitter junction is ________-biased for a B
D the same as
transistor. None of the above .
.
A
reverse, forward C
. considerably more than
.
B 6.  Typical values of voltage amplification for the common-base
forward, reverse configurations vary from ________ and the current gain is D
. None of the above
always ________ . .
C A
reverse, reverse less than 1, 50 to 300
. .
10.  The lower doping level ________ the conductivity and
D B ________ the resistivity of the material.
forward, forward 50 to 300, larger than 1
. .
A
increases, decreases
C .
50 to 300, less than 1
.
3.  The step function (per step) of a curve tracer reveals the scale B
for ________. increases, increases
D .
larger than 1, 50 to 300
A .
collector current IC C
. decreases, decreases
.
B
VCE voltage 7.  D
. decreases, increases
If a value of   is specified for a particular transistor .
configuration it will normally be used for ________ calculations.
C
base current IB
. A
ac
.
11.  The leads of a transistor are typically made of ________.
D
All of the above
. B A
dc gold
. .

C B
4.  The base current is the ________ of the emitter and collector ac and dc aluminum
. .
currents.
A D C
sum None of the above nickel
. . .

B D
difference All of the above
. .
8.  The level of ________ is determined and displayed by
advanced digital meters if using diode-testing mode.
C
product
. A
VBE 12.  If the positive lead of an ohmmeter is connected to the base
.
and the negative lead to the emitter, a low resistance reading
D would indicate a ________ transistor and a high resistance
None of the above
. B reading would indicate a ________ transistor.
IC
.
A
npn, pnp
C .
5.  The outer layers of a transistor are ________ the sandwiched IB
.
layer. B
pnp, npn
D .
A IE
much smaller than .
.
C
npn, npn
.
B the same as
 20.  There is(are) ________ in the internal construction of a TO-92
D B package.
pnp, pnp reverse bias
. .
A
gold bond wires
C .
definitely a defective transistor
.
13.  The active region of a transistor is bounded by the ________. B
a copper frame
D .
A None of the above
cutoff region .
.
C
epoxy encapsulation
.
B
saturation region
.
17.  The common-collector configuration has a ________ input D
impedance and a ________ output impedance. All of the above
.
C
power dissipation curve
. A
low, high
.
D 21.  The ________ region is the region normally employed for linear
All of the above
. B (undistorted) amplifiers.
high, low
.
A
active
C .
14.  All amplifiers should have at least ________ terminals with high, high
.
________ terminal(s) controlling the flow between ________ B
other terminal(s). cutoff
D .
low, low
A .
2, 1, 1 C
. saturation
.
B
3, 1, 2 18.  For practical transistors the level of alpha typically extends from D
. All of the above
________ to ________ with most approaching the higher end .
of the range.
C
3, 2, 1
. A
0.0, 1
.
22.  The magnitude of the base current is typically on the order of
D ________ as compared to ________ for the emitter.
3, 0, 3
. B
0.90, 0.998
. A
A,  A
.
C
15.  The "on" and "off" characteristics refer to ________ limits while 50, 400
. B
the small-signal characteristics indicate the parameters of A, mA
.
importance to ________ operation.
D
None of the above
A . C
ac, dc . mA,  A
.

B D
dc, ac 19.  One p-n junction of a transistor is ________-biased and the mA, mA
. .
other one is ________-biased in the active region.
C A
ac, dc and ac reverse, reverse
. .
23.  In the cutoff region the collector-base junction is ________-
biased and the base-emitter junction is ________-biased for a
D B transistor.
dc and ac, dc forward, forward
. .
A
reverse, forward
C .
reverse, forward
.
16.  An OL indication on an advanced digital meter indicates B
________ while checking a transistor. forward, reverse
D .
None of the above
A .
forward bias C
. reverse, reverse
.
 D . A
forward, forward hi
. .
B
Voltage-divider
. B
hr
.
24.  The level of ________ is determined and displayed by
C
advanced digital meters. Emitter-follower
. C
hf
A .
VCE
. D
None of the above
. D
ho
B .
IB
.

C 3.  Which of the h-parameters corresponds to re in a common-base

IC configuration? 6.  Which of the following conditions must be met to allow the use
.
of the approximate approach in a voltage-divider bias
A configuration?
hib
D .
. dc A
B . re > 10R2
hfb
.
B
25.  When checking a transistor by ohmmeter, a relatively . RE > 10R2
C
________ resistance is displayed for a forward-biased junction hrb
.
and ________ resistance for a reverse-biased junction.
C
A D . RE < 10R2
low, very high hob
. .
D
B . re < 10R2
low, low
.
4.  Refer to this figure. Find the value of IE.
C
high, high 7.  Refer to this figure. Determine the value of Av.
.

D
high, very low
.

BJT AMPLIFIERS

1.  The current gain for the Darlington connection is ________.

A
.
A
B 2 mA
.
.
B A
4 mA 49.6
C . .
.
C B
5 mA 5
D . .
.
D C
6 mA 100
. .

2.  Which of the following configurations has the lowest output D

impedance? 595
.
A Fixed-bias 5.  Which of the following is referred to as the reverse transfer
voltage ratio?
8.  For a common-emitter amplifier, the purpose of swamping is
A
hybrid equivalent
A .
to minimize gain. 15.  What is the voltage gain of a feedback pair connection?
.
B A
re 1
B . .
to reduce the effects of r'e
.
C B
C . –1
to maximize gain. .
.
D C
Thevenin 100
D . .
no purpose
.
D
–100
.
13.  Refer to this figure. Calculate the value of VB.
9.  What is the typical value of the current gain of a common-base
configuration?
A 16.  A common-emitter amplifier has ________ voltage gain,
Less than 1 ________ current gain, ________ power gain, and ________
.
input impedance.
B A
Between 1 and 50 high, low, high, low
. .

C B
Between 100 and 200 high, high, high, low
. .

D C
Undefined high, high, high, high
. .

D
low, low, low, high
.
10.  What is the most important r parameter for amplifier analysis?
A A
rb′ 5V
. .
17.  What is the range of the input impedance of a common-base
B configuration?
B 3.7 V
rc′ .
. A
. A few ohms to a maximum of 50 
C C
re′ 20 V
. . B
. 1k  to 5 k
D
3V
. C
11.  An emitter-follower is also known as a . 100 k  to 500 k
A
common-emitter amplifier.
. D
14.  You have a need to apply an amplifier with a very high power 1M  to 2 M
.
gain. Which of the following would you choose?
B
common-base amplifier. A
. common-collector
.
18.  The advantage that a Sziklai pair has over a Darlington pair is
C
common-collector amplifier. B
. common-base A
. higher current gain.
.
D
Darlington pair. C
. common-emitter B
. less input voltage is needed to turn it on.
.

D C
12.  The ________ model fails to account for the output impedance emitter-follower higher input impedance.
. .
level of the device and the feedback effect from output to input.
 D C .
higher voltage gain. 378 
. .
B
Common-base
D .
. 2.25 k
19.  What is the typical range of the output impedance of a
C
common-emitter configuration? Emitter-follower
.
A
. 10   to 100 22.  What is the range of the current gain for BJT transistor
D
amplifiers? Voltage-divider?
.
B A
1k  to 5 k less than 1
. .

C B 26.  Which of the following represent(s) the advantage(s) of the

40 k  to 50 k 1 to 100 system approach over the r-model approach?
. .
A
Thevenin's theorem can be used.
D C .
500 k  to 1 k above 100
. .
B The effect of changing the load can be determined by
D . a simple equation.
All of the above
.
20.  What is the unit of the parameter ho?
C There is no need to go back to the ac equivalent
A . model and analyze the entire network.
Volt
.
23.  What does the negative sign in the voltage gain of the
D
common-emitter fixed-bias configuration indicate? All of the above
B .
Ohm
. A
The output and input voltages are 180º out of phase.
.
C
Siemen 27.  The differential amplifier has
. B
Gain is smaller than 1.
. A
one input and one output.
D .
No unit
. C
Gain is larger than 1.
. B
two inputs and two outputs.
.
D
21.  Refer to this figure. Calculate the value of Rin(tot). None of the above
. C
two inputs and one output.
.

D
24.  For the common-emitter fixed-bias configuration, there is a one input and two outputs.
.
________ phase shift between the input and output signals.
A
0º
.
28.  The emitter-follower configuration has a ________ impedance
B at the input and a ________ impedance at the output.
45º
. A
low, low
.
C
90º
. B
low, high
.
D
180º
. C
high, low
.
A
. 37.7 k
D
25.  Which one of the following configurations has the lowest input high, high
.
B impedance?
. 3.77 k
A Fixed-bias
29.  The differential amplifier produces outputs that are
D
collector feedback
A .
common mode.
.

B
in-phase with the input voltages. 33.  Refer to this figure. You notice while servicing this amplifier that
.
the output signal at Vout is reduced from normal. The problem
could be caused by
C
the sum of the two input voltages.
.

D
the difference of the two input voltages.
.

30.  The ________ model suffers from being limited to a particular A

set of operating conditions if it is to be considered accurate. 20 V
.
A
hybrid equivalent B
. 10 V
.
B
re C
. 5V
.
C
. D
A 0V
an open C3. .
.
D
Thevenin
.
B
an open C2.
. 36.  In a common-base amplifier, the input signal is connected to
the
31.  Under which of the following condition(s) is the current C A
an open base-emitter of Q2. base.
. .
gain  ?
D B
A a shorted C2 collector.
ro   10RC . .
.

B C
emitter.
. RB   10re 34.  When the bypass capacitor is removed from a common-emitter .
amplifier, the voltage gain
C D
A output.
. ro   10RC and RB   10re increases. .
.

D
None of the above B
. decreases.
. 37.  Which of the following is (are) true to achieve a good overall
voltage gain for the circuit?
C A The effect of Rs and RL must be considered as a
has very little effect.
32.  The ________ configuration is frequently used for impedance . . product.
matching.
A B The effect of Rs and RL must be considered as a
fixed-bias . product and evaluated individually.
. 35.  Refer to this figure. Determine the value of VC.

B C
voltage-divider bias The effect of Rs and RL must be evaluated individually.
. .

C D
emitter-follower None of the above
. .
38.  To analyze the common-emitter amplifier, what must be done
to determine the dc equivalent circuit? D .
. 500 
A C
leave circuit unchanged
. . 3.125 

B 41.  Under which of the following conditions is the output impedance

replace coupling and bypass capacitors with opens D
. of the network approximately equal to RC for a common-emitter 5.75 
.
fixed-bias configuration?
C A
replace coupling and bypass capacitors with shorts ro   10RC
. .
45.  Which of the following should be done to obtain the ac
D B equivalent of a network?
replace VCC with ground ro < 10RC
. . A
Set all dc sources to zero
.
C
ro < ro
. B
39.  For the common-emitter amplifier ac equivalent circuit, all Replace all capacitors by a short-circuit equivalent.
capacitors are .
D
ro > ro
A . C Remove all elements bypassed by the short-circuit
effectively shorts.
. . equivalent.

B D
effectively open circuits. 42.  Which of the following gains is less than 1 for a common-base All of the above
. .
configuration?
C A
not connected to ground. Ai
. .
46.  In an unbypassed emitter bias configuration hie replaces
D B ________ in the re model.
connected to ground. Av
. . A
re
.
C
Ap
. B
40.  Refer to this figure. If an emitter bypass capacitor was installed,
determine the value of Rin(base). .
D
None of the above
. C
. re

D
43.  Which of the following define(s) the conversion efficiency? Ib
.
A
Ac power to the load/ac input power
.

B 47.  Which of the following is (are) true regarding the input

Ac power to the load/dc power supplied
. impedance for frequencies in the midrange  100 kHz of a
BJT transistor amplifier?
C A
Dc output power/ac input power The input impedance is purely resistive.
. .

D B
All of the above It varies from a few ohms to megohms.
. .
A
. 416  C An ohmmeter cannot be used to measure the small-
. signal ac input impedance.
44.  The dc emitter current of a transistor is 8 mA. What is the value
B of re?
. 5k D
A All of the above
.
. 320 
C
. 50 k
B 13.3 k
48.  For the collector dc feedback configuration, there is a
 ________ phase shift between the input and output signals.
A
0º 55.  The loaded voltage gain of an amplifier is always more than the
.
no-load level.
B A
45º True
. .

C B
90º False
. .

D
180º
.
56.  Which of the following configurations has a voltage gain of –
RC /re?
A
49.  A common-collector amplifier has ________ input resistance, Fixed-bias common-emitter
.
________ current gain, and ________ voltage gain.
A A
high, high, low 420  B
. . Common-emitter voltage-divider with bypass capacitor
.

B B
high, low, low 50 k C Fixed-bias common-emitter and voltage-divider with
. .
. bypass capacitor

C C
high, low, high 940  D Common-emitter voltage-divider without bypass
. .
. capacitor

D
. 100.8 
50.  The total gain of a multistage amplifier is the ________. 57.  An emitter-follower amplifier has an input impedance of 107 k
A . The input signal is 12 mV. The approximate output voltage
sum of individual voltage gains
. 53.  For a common-emitter amplifier, the purpose of the emitter is (common-collector)
bypass capacitor is
A
B 8.92 V
sum of dB voltage gains A .
. no purpose, since it is shorted out by RE.
.
B
112 mV
B .
to reduce noise.
51.  Which of the following configurations has an output impedance .
Zo equal to RC? C
12 mV
C .
A to despike the supply voltage.
Fixed-bias common-emitter .
.
D
8.9 mV
D .
B to maximize amplifier gain.
Common-emitter voltage-divider with bypass capacitor .
.

C Common-emitter voltage-divider without bypass 58.  Which of the following is (are) true regarding the output
. capacitor 54.  For BJT amplifiers, the ________ gain typically ranges from a impedance for frequencies in the midrange  100 kHz of a
level just less than 1 to a level that may exceed 1000. BJT transistor amplifier?
D
All of the above A A
. voltage The output impedance is purely resistive.
. .

B B
current It varies from a few ohms to more than 2 M .
52.  Refer to this figure. Find the value of Rin(base). . .

C C An ohmmeter cannot be used to measure the small-

impedance
. . signal ac output impedance.

D D All of the above

All of the above
.
 . C A
hie – (hre / hoe)(1 + hfe) smaller, smaller
. .

D B
59. Refer to this figure. The output signal from the first stage of this hfe smaller, larger
. .
amplifier is 0 V. The trouble could be caused by
E. none of the above C
larger, smaller
.

D
62.  What is the controlling current in a common-base larger, larger
.
configuration?
A
Ie
.
66.  Refer to this figure. If an emitter bypass capacitor was installed,
what would the new Av be?
B
Ic
.

C
Ib
.

D
None of the above
.
A
an open C4.
.

B 63.  Which of the following techniques can be used in the sinusoidal

an open C2. ac analysis of transistor networks?
.
A
C Small-signal
an open base-emitter of Q1. .
.
B
D Large-signal
a shorted C4. .
.
A
C 4.96
Small- or large-signal .
.
60.  What is the limit of the efficiency defined by = Po / Pi? B
D 125
None of the above .
A .
Greater than 1
. C
398
.
B
Less than 1 64.  The input impedance of a BJT amplifier is purely ________ in
. D
nature and can vary from a few ________ to ________. 600
.
C A
Always 1 resistive, ohms, megohms
. .

D B 67.  A Darlington pair provides beta ________ for ________ input

None of the above capacitive, microfarads, farads
. . resistance.
A
C multiplication, decreased
inductive, millihenrys, henrys .
.
61.  What is re equal to in terms of h parameters?
B
A D multiplication, increased
hre / hoe None of the above .
. .
C
B division, decreased
(hre + 1) / hoe .
.
65.  The ________ the source resistance and/or ________ the load
resistance, the less the overall gain of an amplifier.
68.  A Darlington pair amplifier has
. A
Zi
A .
high input impedance and high voltage gain.
. D
hoe
. B
Zo
B .
low input impedance and low voltage gain.
.
C
4.  The feedback pair uses a(n) ________ transistor driving a(n) Av
C .
a voltage gain of about 1 and a low input impedance. ________ transistor, the two devices acting effectively much
.
like one pnp transistor.
D
Ai
D A .
a low voltage gain and a high input impedance. pnp, npn
. .

B
pnp, pnp 8.  The dc load line and ac load line both have the same ________
.
.
BJT AMPLIFIERS FILL IN THE BLANKS
C A
npn, npn x-intercept
. .
1.  In a fixed-bias network, the input signal Vi is applied to the
________ of the transistor while the output Vo is off the
D B
________. None of the above y-intercept
. .
A
base, collector
. C
slope
.
B 5.  In a hybrid equivalent circuit, ________ is determined to make
base, emitter it easier to find the other parameters.
. D
Q-point
A .
Zi
C .
emitter, collector
.
B
Zo 9.  The ________ the level of RL, the ________ the level of ac
D .
None of the above voltage gain.
.
C A
Ai smaller, higher
. .

2.  In an emitter-follower, the voltage gain is ________.

D B
Av larger, lower
A . .
slightly less than 1
.
C
smaller, lower
B .
slightly more than 1 6.  The input and output signals are ________ for the typical
.
transistor amplifier at frequencies that permit ignoring the
D
effects of the reactive elements. None of the above
C .
a very large value
. A
in phase
.
D
None of the above 10.  The coupling capacitor places the load and collector resistors in
. B
180º out of phase a ________ arrangement.
.
A
series
C .
3.  In an unbypassed emitter-bias configuration ________ replaces either in phase or 180º out of phase
.
re in the hybrid equivalent circuit.
B
parallel
A D .
hie None of the above
. .
C
series-parallel
B .
hfe
.
7. 
________ is slightly affected if the condition ro   10RE is not D
None of the above
C hre satisfied in the analysis of an emitter-follower configuration. .
 C .
Ai
.
11.  In a voltage-divider bias configuration, the voltage-divider
B
equation is used to determine the ________. a moderate
D .
All of the above
A .
ac level of Vb
. C
no
.
B
dc level of IB 15.  The level of re is determined by ________.
. D
None of the above
A .
a
C .
dc level of VB
.
B
IE 19.  The ac voltage gain of a Darlington connection is about
D .
ac level of Ib ________.
.
C A
0
. .

12.  The ________ of the input signal is one of the first concerns in
D B
the sinusoidal ac analysis of transistor networks. IB 1
. .
A
period
. C
. D

B 16.  The ________ the source resistance, the ________ the overall
frequency gain of an amplifier.
. D
None of the above
A .
larger, higher
C .
magnitude
.
B
larger, lower 20.  One junction of an operating transistor is ________ and the
D .
None of the above other one is ________.
.
C A
lower, lower forward-biased, forward-biased
. .

13.  The ________ model(s) is (are) commonly used in the small-

D B
signal ac analysis of transistor networks. None of the above forward-biased, reverse-biased
. .
A
re
. C
reverse-biased, reverse-biased
.
B 17.  In a common-base configuration, the input and output voltages
hybrid equivalent are ________ and the output and input currents are ________.
. D
None of the above
A .
180º out of phase, 180º out of phase
C .
re and hybrid equivalent
.
B
180º out of phase, in phase 21.  The output voltage and the input voltage are ________ for the
D .
None of the above common-base configuration.
.
C A
in phase,180º out of phase 45º out of phase
. .

14.  In a voltage-divider bias configuration, there can be a

D B
measurable difference in the results for ________ if the in phase, in phase 90º out of phase
. .
condition ro   10RC is not satisfied.
A C
Zo 180º out of phase
. .
18.  Ideally, the changes in the load resistor or the source resistor
should have ________ effect on all the parameters of the two-
B D
Av port model. in phase
. .
A a great
22.  A common-base configuration has ________ impedance at the
input and ________ impedance at the output. D .
low, low
.
A C
high, high 180º out of phase
. .

B 26.  ________ refers to the forward transfer current ratio.

high, low D
. in phase
A .
hi
.
C
low, low
.
B
hr 30.  ________ can be applied to determine the response of the ac
.
D equivalent circuit.
low, high
.
C A
hf Mesh analysis
. .

23.  In a common-emitter configuration ________ is the controlling D B

ho Node analysis
current while ________ is the controlled current. . .

A C
IC, IB Thevenin's theorem
. .
27.  For transistor amplifiers, the no-load voltage gain is ________
B the loaded voltage gain.
IC, IE D
. All of the above
A .
smaller than
.
C
IB, IC
.
B
greater than 31.  The bypass capacitor in a common-emitter configuration
.
D ________ the voltage gain.
None of the above
.
C A
the same as significantly decreases
. .

24.  For the common-emitter and common-base configurations, the D B

None of the above significantly increases
magnitude of ________ and ________ is often not included in . .
the model.
C
A slightly increases
hr , ho .
. 28.  The peak value of the ac input signal is controlled by the
________ in a transistor network for the frequencies in the low
D
B to midrange. slightly decreases
hi, he .
.
A
resistors
.
C
hi, hr
. 32.  The loaded voltage gain of an amplifier is ________ the no-
B
applied dc voltage load level.
.
D
he , ho A
. always more than
C .
capacitors
.
B
always less than
25.  An emitter-follower has ________ impedance at the input and D .
None of the above
________ impedance at the output. .
C
A always the same as
high, high .
.
29.  In an emitter-follower, the output voltage is ________ with the
D
B input voltage. None of the above
low, high .
.
A
45º out of phase
.
C
high, low
. 33.  The common-emitter configuration has a ________ level of
B 90º out of phase
input impedance with a ________ voltage and current gain.
 2.  8.  A coupling capacitor couples dc to an amplifier.
A Besides the fact that  DC = IC/IB and  ac =  IC/ IB, these
moderate, high
. quantities are always the same for purposes of small-signal A
True
amplification. .
B
low, moderate A
. True B
. False
.
C
low, low B
. False
.
9.  A common-emitter amplifier has the advantages of good
D
high, low voltage, current, and power gain, but the disadvantage of a
.
relatively low input impedance.
3.  r'e is temperature dependent.
A
True
A .
34.  For a common-base configuration, the input impedance is True
.
relatively ________ and the output impedance quite ________. B
False
A B .
high, small False
. .

B
small, high 10.  The common-base amplifier has a good voltage gain, low input
.
4.  A common-collector amplifier has high input impedance, good impedance, and high current gain.
current gain, and a voltage gain of 1.
C A
small, small True
. A .
True
.
D B
high, high False
. B .
False
.

35.  The output voltage and the input voltage are ________ for the FET DEVICES
common-emitter configuration. 5.  The total voltage gain of a multistage amplifier is the product of
the individual stage gains.
A 1.  Which of the following ratings appear(s) in the specification
in phase A
. True sheet for an FET?
.
A
B Voltages between specific terminals
45º out of phase B .
. False
.
B
C Current levels
90º out of phase .
.
6.  A Darlington pair provides a very low input impedance. C
D Power dissipation
180º out of phase .
. A
True
.
D
All of the above
.
B
False
BJT AMPLIFIERS TRUE OR FALSE .

1.  2.  What is the level of drain current ID for gate-to-source voltages
AC current ratios   and   convert directly from h VGS less than (more negative than) the pinch-off level?
ac ac
7.  The output resistance of the common-emitter amplifier is
parameters. approximately equal to the collector resistance. A
zero amperes
A .
True A
. True
.
B
IDSS
B .
False B
. False
.
C
Negative value
.
 D
Undefined
.

3.  What is the level of IG in an FET?

A
Zero amperes
.

B
Equal to ID
.

C A
Depends on VDS 0.444 mA
. .
A
25 Vdc, –200 nAdc B
D . 1.333 mA
Undefined
. .
B
–25 Vdc, 10 mAdc C
. 0.111 mA
.
4.  What is the range of an FET's input impedance?
C
–6 Vdc, –1.0 nAdc D
A . 4.444 mA
. 10   to 1 k .
D
None of the above
B .
. 1k  to 10 k
10.  Which of the following controls the level of ID?
C A
50 k  to 100 k 7.  At which of the following condition(s) is the depletion region VGS
. .
uniform?
D A B
1M  to several hundred M No bias VDS
. . .

B C
VDS > 0 V IG
. .
5.  Which of the following applies to a safe MOSFET handling?
A C D
Always pick up the transistor by the casing. VDS = VP VDG
. . .

B Power should always be off when network changes D

None of the above
. are made. .
11.  It is the insulating layer of ________ in the MOSFET
construction that accounts for the very desirable high input
C impedance of the device.
Always touch ground before handling the device.
.
8.  What is the ratio of ID / IDSS for VGS = 0.5 VP? A
SiO
D A .
All of the above 0.25
. .
B
GaAs
B .
0.5
.
6. Refer to this portion of a specification sheet. Determine the values C
of reverse-gate-source voltage and gate current if the FET was SiO2
C .
forced to accept it. 1
.
D
HCl
D .
0
.

12.  The BJT is a ________ device. The FET is a ________ device.

9.  Referring to this transfer curve, determine ID at VGS = 2 V.
 A .
bipolar, bipolar
.

B
bipolar, unipolar 15.  The transfer curve is not defined by Shockley's equation for the
.
________.
C A
unipolar, bipolar JFET
. .

D B
unipolar, unipolar depletion-type MOSFET
. .

C
enhancement-type MOSFET
.
13.  Referring to this transfer curve. Calculate (using Shockley's
equation) VGS at ID = 4mA.
D
BJT
.

16.  What is the purpose of adding two Zener diodes to the A

MOSFET in this figure? 1.66 V
.

B
–1.66 V
.

C
0.66 V
.

D
–0.66 V
.

A
To reduce the input impedance
.
A 18.  The region to the left of the pinch-off locus is referred to as the
2.54 V ________ region.
. B
To protect the MOSFET for both polarities
. A
B saturation
–2.54 V .
. C
To increase the input impedance
. B
C cutoff
–12 V .
. D
None of the above
. C
D ohmic
Undefined .
.
D
17.  Referring to the following transfer curve, determine the level of All of the above
.
VGS when the drain current is 20 mA.
14.  The drain current will always be one-fourth of IDSS as long as
the gate-to-source voltage is ________ the pinch-off value.
A 19.  Refer to the following curves. Calculate ID at VGS = 1 V.
one-fourth
.

B
one-half
.

C
three-fourths
.

D None of the above

 . B
3
.
D
None of the above
. C
4
.

D
21.  The three terminals of the JFET are the ________, ________, 3 or 4
.
and ________.
A
gate, collector, emitter
.
25.  Refer to the following figure. Calculate VGS at ID = 8 mA for k =
0.278 × 10–2 A/V2.
B
base, collector, emitter
.

C
gate, drain, source
.

D
gate, drain, emitter
.

22.  Which of the following is (are) the terminal(s) of a field-effect

transistor (FET).
A A
Drain 3.70 V
. .

B B
Gate 5.36 V
. .

C C
Source 7.36 V
. .

D D
All of the above 2.36 V
. .
A
8.167 mA
.
23.  A BJT is a ________-controlled device. The JFET is a 26.  The level of VGS that results in ID = 0 mA is defined by VGS =
B ________ - controlled device.
4.167 mA ________.
.
A A
voltage, voltage VGS(off)
C . .
6.167 mA
.
B B
voltage, current VP
D . .
0.616 mA
.
C C
current, voltage VDS
. .

20.  Which of the following transistor(s) has (have) depletion and D D

enhancement types? current, current None of the above
. .
A
BJT
.
24.  How many terminals can a MOSFET have? 27.  Which of the following FETs has the lowest input impedance?
B
JFET A
. 2 A
. JFET
.
C MOSFET
 B A
MOSFET depletion-type Reduced channel resistance
. .

C B
MOSFET enhancement-type Higher current and power ratings
. .

D C
None of the above Faster switching time
. .

D
All of the above
.
28.  Which of the following applies to MOSFETs?
A No direct electrical connection between the gate
. terminal and the channel
32.  Hand-held instruments are available to measure ________ for
the BJT.
B
Desirable high input impedance A
. A 1.1378 k
.
. dc
C Uses metal for the gate, drain, and source
B
. connections B 113.78
IDSS .
.
D
All of the above C
. C 11.378
VP .
.
D
D 11.378 k
29.  At which of the following is the level of VDS equal to the pinch- All of the above .
.
off voltage?
A
When ID becomes equal to IDSS
. 35.  Which of the following is (are) not an FET?
33.  Which of the following input impedances is not valid for a
JFET? A
B n-channel
When VGS is zero volts .
. A
. 1010
B
C p-channel
IG is zero .
. B 9
. 10  
C
D p-n channel
All of the above .
. C
. 108 
D
n-channel and p-channel
.
D 11
30.  Which of the following represent(s) the cutoff region for an . 10  
FET?
A
ID = 0 mA
. FET DEVICES FILL IN THE BLANKS
34. Refer to the following characteristic curve. Calculate the
B resistance of the FET at VGS = –0.25 V if ro = 10 k .
VGS = VP 1.  One of the most important characteristics of the FET is its
. ________ impedance.

C A
IG = 0 low input
. .

D B
All of the above medium input
. .

C
high input
.
31.  Which of the following is (are) the advantage(s) of VMOS over
MOSFETs?
 combat the possibility of thermal runaway.
D .
None of the above
. A
positive
C .
VDG
.
B
2.  The pinch-off voltage continues to drop in a ________ manner negative
D .
as VGS becomes more and more negative. ID
.
A C
linear zero
. .

B 6.  In an FET transistor, the depletion region is ________ near the D

parabolic top of both p-type materials. None of the above
. .
A
wider
C .
cubic
.
10.  The enhancement-type MOSFET is in the cutoff region if
B ________.
narrower
D .
None of the above
. A
applied VGS is larger than VGS(Th)
C .
the same as the rest of the depletion region
.
B
3.  In a curve tracer, the ________ reveals the distance between applied VGS is less than or equal to VGS(Th)
D .
the VGS curves for the n-channel device. None of the above
.
A C
vertical sens. VGS has a positive level
. .

B 7.  The ________ transistor has become one of the most important D
horizontal sens. devices used in the design and construction of integrated None of the above
. .
circuits for digital computers.
C A
Per step MOSFET
. .
11.  A(n) ________ can be used to check the condition of an FET.
D B A
gm BJT digital display meter (DDM)
. . .

C B
JFET ohmmeter (VOM)
. .
4.  The specification sheet provides ________ to calculate the
value of k for enhancement-type MOSFETs.
D C
None of the above curve tracer
A . .
VGS(on)
.
D
All of the above
B .
ID(on) 8.  The silicon dioxide (SiO2) layer used in a MOSFET is
.
________.
C A
VGS(Th) an insulator 12.  ________ has high input impedance, fast switching speeds,
. .
and lower operating power levels.
D B A
All of the above a conductor CMOS
. . .

C B
a semiconductor FET
. .
5.  In an FET circuit, ________ is normally the parameter to be
determined first.
D C
None of the above BJT
A . .
VGS
.
D
None of the above
B VDS .
9.  VMOS FETs have a ________ temperature coefficient that will
 . .

13.  The primary difference between the construction of depletion-

D B
type and enhancement-type MOSFETs is ________. None of the above voltage-controlled
. .
A
the size of the transistor
. C
voltage-current controlled
.
B 17.  In an n-channel depletion-type MOSFET the region of positive
the absence of the channel gate voltages on the drain or transfer characteristics is referred
. D
to as the ________ region with the region between cutoff and None of the above
.
the saturation level of ID referred to as the ________ region.
C
the reverse bias junction
. A
depletion, enhancement
.
D 21.  As VGS becomes ________ negative, the slope of each curve in
All of the above the characteristics becomes ________ horizontal
. B
enhancement, enhancement corresponding with an increasing resistance level.
.
A
less, more
C .
14.  The region to the right of the pinch-off locus is commonly enhancement, depletion
.
referred to as the ________ region.
B
more, less
A D .
constant-current None of the above
. .
C
more, more
B .
saturation
.
18.  The active region of an FET is bounded by ________.
D
None of the above
C A .
linear amplification ohmic region
. .

D B
All of the above cutoff region 22.  In an n-channel enhancement-type MOSFET with a fixed value
. .
of VT, the ________ the level of VGS, the ________ the
saturation level for VDS.
C
power line
. A
15.  The primary difference between the construction of a MOSFET higher, more
.
and an FET is the ________.
D
All of the above
A . B
construction of the gate connection higher, less
. .

B C
low input impedance 19.  The level of ________ that results in the significant increase in lower, lower
. .
drain current in enhancement-type MOSFETs is called
threshold voltage VT.
C D
threshold voltage None of the above
. A .
VDD
.
D
None of the above
. B
VDS 23.  The FET resistance in the ohmic region is ________ at VP and
.
________ at the origin.
C A
16.  The FET is a ________ device depending solely on either VGS smallest, largest
. .
electron (n-channel) or hole (p-channel) conduction.
A D B
unipolar VDG largest, smallest
. . .

B C
bipolar larger, smaller
. .
20.  A junction field-effect transistor (JFET) is a ________ device.
C tripolar A current-controlled D smaller, larger
 . B
85%.
.

C
24.  In the n-channel transistor, the drain and source are connected 90%.
.
to the ________ channel while the gate is connected to the two
layers of ________ material.
D
100%.
A .
p-type, n-type
.

B
p-type, p-type 3.  A common-source amplifier is similar in configuration to which
.
BJT amplifier?
C A
n-type, p-type common-base
. .

D B A
n-type, n-type common-collector 20 V
. . .

C B
common-emitter 11 V
. .
25.  The transfer curve can be obtained by ________.
A D C
using Shockley's equation emitter-follower 10 V
. . .

B using both Shockley's equation and by output D

. characteristics 9V
4. Refer to this figure. If R6 opened, the signal at the drain of Q1 would .

C
characteristics
.
6.  A BJT is a ________-controlled device.
D A
None of the above current
. .

B
voltage
.
FET AMPLIFIERS

1.  A common-gate amplifier is similar in configuration to which 7. 

BJT amplifier? Referring to this figure, calculate Av if rd = 19 k .

A
common-emitter
.
A
increase.
B .
common-collector
.
B
decrease.
C .
common-base
.
C
remain the same.
D .
emitter-follower
.
D
distort.
.

2.  The theoretical efficiency of a class D amplifier is

A
–2.85
A .
75%. 5.  Refer to this figure. Find the value of VD.
.
B –3.26
 . D
IDSS
.
C
–2.95
.

13.  Refer to this figure. If Vin = 20 mV p-p what is the output

D
–3.21 voltage?
.

8.  A common-drain amplifier is similar in configuration to which

BJT amplifier?
A
common-emitter
.

B
common-collector
.
A
undistorted.
C .
common-base
.
B
clipped on the negative peaks.
D .
common-gate
.
C A
clipped on the positive peaks. 176 mV p-p
. .

9.  Referring to this figure, calculate Av for yos = 58  S. D

0 V p-p. B
. 88 mV p-p
.

C
48 mV p-p
.
11.  Use the following equation to calculate gm for a JFET having
IDSS = 10 mA, VP = –5 V, and VGSQ = –2.5 V.
D
24 mV p-p
.

A
2 mS 14.  Referring to the following figure, calculate gm for VGSQ = –1.25
.
V.
B
3 mS
.

C
A 4 mS
–7.29 .
.
D
B 5 mS
–7.50 .
.

C
–8.05
. 12.  For what value of ID is gm equal to 0.5 gm0?

D A
–8.55 0 mA A
. . 2 mS
.
B
0.25 IDSS B
. 2.5 mS
10.  Refer to this figure. If Vin = 1 V p-p, the output voltage Vout would .
be C
0.5 IDSS C 2.75 mS
.
 . B C
BJTs 180
. .
D
3.25 mS
. C D
MOSFETs none of the above
. .

D
15. Referring to this figure, calculate the value of RD if the ac gain is any of the above
.
10. Assume VGSQ = ¼Vp. 22. Refer to this figure. If C4 opened, the signal voltage at the drain of
Q1 would

18.  What is (are) the function(s) of the coupling capacitors C1 and

C2 in an FET circuit?
A
to create an open circuit for dc analysis
.

B to isolate the dc biasing arrangement from the applied

. signal and load

C
to create a short-circuit equivalent for ac analysis
.

D
All of the above
.

A
increase.
.
19.  An FET is a ________-controlled device.
A B
. 2.2 k A decrease.
current .
.
B C
. 2.42 k B remain the same.
voltage .
.
C D
. 2.62 k distort.
.
20.  What is the input resistance (Rin(source)) of a common-gate
D amplifier?
. 2.82 k
A 23.  Referring to this figure, find Z  if y  = 20 
Rs S.
. o os

16.  Where do you get the level of gm and rd for an FET transistor? B
.
A
from the dc biasing arrangement
.
C
1 / gm
.
B
from the specification sheet
.
D
none of the above
.
C
from the characteristics
.

D 21.  There is a ________º phase inversion between gate and

All of the above
. source in a source follower.
A
0
.
17.  The class D amplifier uses what type of transistors? A
B . 1.85 k
A 90
JFETs .
.
 B B B
1.92 k lower on-state resistance. 3 mS
. . .

C C C
2.05 k a positive temperature coefficient. 4 mS
. . .

D D D
2.15 k all of the above 5 mS
. . .

24.  Which of the following is a required condition to simplify the 28.  When VGS = 0.5 Vp gm is ________ the maximum value. 31.  Which type of FETs can operate with a gate-to-source Q-point
equations for Zo and Av for the self-bias configuration? value of 0 V?
A
one-fourth
A . A
rd  10RD JFET
. .
B
one-half
B . B
rd = RD E-MOSFET
. .
C
three-fourths
C . C
rd   10RD D-MOSFET
. .

D
None of the above 29.  MOSFET digital switching is used to produce which digital
.
gates? 32.  On which of the following parameters does rd have no or little
impact in a source-follower configuration?
A
inverters
. A
25.  The steeper the slope of the ID versus VGS curve, the ________ Zi
.
the level of gm.
B
NOR gates
A . B
less Zo
. .
C
NAND gates
B . C
same Av
. .
D
all of the above
C . D
greater All of the above
. .

30.  Referring to the transfer characteristics shown below, calculate

26.  What is the typical value for the input impedance Zi for JFETs? gm at VGSQ = –1 V. 33.  Refer to this figure. For midpoint biasing, ID would be
A
. 100 k

B
. 1M

C
. 10 M

D
. 1000 M

27.  MOSFETs make better power switches than BJTs because

they have A
A 10 mA.
2 mS .
A .
lower turn-off times.
.
B 7.5 mA.
 .

C
5 mA.
.

D
2.5 mA.
.

34.  Class D amplifiers differ from all other classes of amplifiers

because
A
the output transistors are operated as switches.
.
A
B . 100 k
of their very low input capacitance. A
. 10.8 V
.
B
C . 80 k
of their high-frequency response capabilities. B
. 6V
.
C
D . 25 k
they employ dual MOSFETs. C
. –0.7 V
.
D
. 5k
D
–6 V
35.  Refer to this figure. If R7 were to decrease in value, Vout would .

40.  Referring to this figure, calculate Z  if r  = 19 k .

o d
37.  Which FET amplifier(s) has (have) a phase inversion between
input and output signals?
A
common-gate
.

B
common-drain
.

C
common-source
.

D
A all of the above
increase. .
.

B
decrease. A
. 38.  What common factor determines the voltage gain and input 1.75 k
.
resistance of a common-gate amplifier?
C
remain the same. A B
. RD 1.81 k
. .

D
distort. B C
. RL 1.92 k
. .

C D
gm . 2.00 k
36.  Refer to this figure. If ID = 4 mA, find the value of VGS. .

39.  Referring to the figure below, determine the output impedance 41.  Referring to this figure, calculate Z  if r  = 19 k
i d .
for VGS = –3 V at VDS = 5 V.
 A
less
.

B
same
.

C
greater
.

46.  Refer to this figure. If gm = 4000 mS and a signal of 75 mV rms

is applied to the gate, calculate the p-p output voltage.

A
2.83 mS
.
A
. 2.42 M B
3.00 mS
.
B
. 2.50 M C
3.25 mS
.
C
. 2.53 M D
3.46 mS
.
D
. 2.59 M

44.  Referring to this figure, calculate Zo for VGSQ = –3.2 V.

A
42.  For the fixed-bias configuration, 990 mV
.
if   ________.
B
1.13 V p-p
A .
RD
.
C
2.8 V p-p
B .
.
D
990 V p-p
C .
RG
.

D
. A 47.  Refer to this figure. The approximate value of Rin is
. 362.52 

B
43.  Referring to this figure, obtain gm for ID = 6 mA. . 340.5 

C
. 420.5 

D
. 480.9 

45.  The more horizontal the characteristic curves on the drain

characteristics, the ________ the output impedance.
 A A B
100 M . high. 330.4 
. . .

B B C
1.5 k . low. 340.5 
. . .

C D
. 3.3 k . . 350.0 
51.  Determine the value for RD if the ac gain is 8.
D
. 48 M .
53.  FET amplifiers provide ________.
A
excellent voltage gain
.
48.  Which of the following is (are) related to depletion-type
MOSFETs?
B
high input impedance
A .
.  can be negative, zero, or positive.
C
low power consumption
B .
gm can be greater or smaller than gm0.
.
D
All of the above
C .
ID can be larger than IDSS. A
. 1.51 k
.

D
All of the above B 54.  CMOS digital switches use
. 1.65 k
.
A
n-channel and p-channel D-MOSFETs in series.
.
C
. 1.85 k
49.  Refer to this figure. If C2 shorted, Vout would B
n-channel and p-channel D-MOSFETs in parallel.
.
D
. 2.08 k
C
n-channel and p-channel E-MOSFETs in series.
.

52.  Referring to this figure, calculate Z  for y  = 20  D

S. Assume n-channel and p-channel E-MOSFETs in parallel.
i os
.
VGSQ = −2.2V.

55.  What is the range of gm for JFETs?

A
. 1  S to 10  S

A B
increase. . 100  S to 1000  S
.

B C
decrease. . 1000  S to 5000  S
.

C D
remain the same. . 10000  S to 100000  S
.

D
distort.
.
A 56.  Calculate g  and r  if y  = 4 mS and y  = 15
300.2  m d fs os S.
.
A 4 mS, 66.7 k
50.  The input resistance at the gate of a FET is extremely
 . A
increase.
.
62.  E-MOSFETs are generally used in switching applications
B
4 mS, 15 k because
. B
decrease.
. A
of their very low input capacitance.
C .
. 66.7 k , 4 mS C
remain the same.
. B
of their threshold characteristic (VGS(th)).
D .
None of the above
. D
distort.
. C
of their high-frequency response capabilities.
.

57.  What limits the signal amplitude in an analog MOSFET switch? D

60.  Refer to this figure. If VGS = –6 V, calculate the value of RS that of their power handling.
A .
the switch input capacitance will provide this value.
.

B
VGS(th) 63.  For an FET small-signal amplifier, one could go about
.
troubleshooting a circuit by ________.

C A
the switch's power handling viewing the circuit board for poor solder joints
. .

D B
VDS using a dc meter
. .

C
applying a test ac signal
.
58.  Input resistance of a common-drain amplifier is
A D
RG || RIN(gate). All of the above
. .

B
RG + RIN(gate).
. A
2.2 k 64.  The E-MOSFET is quite popular in ________ applications.
.
C A
RG. digital circuitry
. B .
. 1.2 k
D B
RIN(gate). high-frequency
. C .
. 600 k
C
buffering
D .
59. Refer to this Figure. If Vin was increased in amplitude a little, the . 100 k
signal voltage at the source of Q2 would D
All of the above
.

61.  A JFET cascade amplifier employs

A 65.  Referring to this figure, calculate A  if y  = 20 
2 common-gate amplifiers. S.
. v os

B
2 common-source amplifiers.
.

C
1 common-gate and 1 common-source amplifier.
.

D
1 common-gate and 1 common-drain amplifier.
.
 67.  In a common-source amplifier, the purpose of the bypass
capacitor, C2, is to
A
keep the source effectively at ac ground.
.

B
provide a dc path to ground.
.

C
provide coupling to the input.
.

D
provide coupling to the load.
.

68.  Refer to this figure. The voltage gain is

A A
–3.48 19.2 V
. .

B B
–3.56 –6 V
. .

C C
–3.62 10.8 V
. .

D D
–4.02 30 V
. .

66.  Referring to this figure, calculate Z  if y  = 40  70.  If ID = IDSS / 2, gm = ________ gmo.
o os S.
A
1
.
A
1.2.
. B
0.707
.
B
2.4.
. C
0.5
.
C
4.4.
.

D
.
8.8. FET AMPLIFIERS FILL IN THE BLANKS

1.  The gate-to-source voltage VGS of a(n) ________ must be

larger than the threshold VGS(Th) for the transistor to conduct.
69.  Refer to this figure. If ID = 4 mA, IDSS = 16 mA, and VGS(off) = –8
A V, find VDS. A
JFET
. 2.92 k .

B B
D-type MOSFET
. 3.20 k .

C C
E-type MOSFET
. 3.25 k .

D D
None of the above
. 3.75 k .
2.  ________ is the network-input impedance for a JFET fixed-bias
configuration. .

A 6.  The transconductance gm ________ as the Q-point moves from

RG D
. Vp to IDSS All of the above
.
A
B decreases
RD .
.
B 10.  The input and output signals are in phase in a ________
C remains the same configuration.
Zero .
.
A
fixed-bias
C .
D increases
None of the above .
.
B
source-follower
D .
None of the above
.
3.  The isolation between input and output circuits in the ac C
voltage-divider
equivalent circuit is lost in a ________ configuration. .

A 7.  rd changes from one operation region to another with ________

common-gate D
. values typically occurring at ________ levels of VGS (closer to self-bias
.
zero).
B A
common-source lower, lower
. .
11.  gm has its maximum value for a JFET at ________.
C B
common-drain lower, higher
. . A
.
D C
None of the above higher, lower
. .
B
D .
None of the above 0.5 
.
4.  ________ is the amplification factor in FET transistor amplifiers.
A C
Zi .
.
8.  The ________ is quite popular in digital circuits, especially in 0.3 
CMOS circuits that require very low power consumption.
B
gm D
. A IDSS
JFET .
.
C
ID
. B
BJT
. 12.  The depletion MOSFET circuit has a ________ input
D impedance than a similar JFET configuration.
IG
. C
D-type MOSFET A
. much higher
.

D
5.  The ________ does not support Shockley's equation. E-type MOSFET B
. much lower
.
A
JFET
. C
lower
9.  .
B ________ configuration(s) has (have) Zo   RD.
D-type MOSFET
.
A D
Fixed-bias higher
. .
C
E-type MOSFET
.
B
Self-bias
.
D 13.  ________ is the only parameter that is different between
None of the above
. voltage-divider and fixed-bias configurations.
C Voltage-divider
 17.  The range of output admittance yos for FETs is ________.
A
Zi
. A
. 5  S–10  S 21.  The range of input impedance Zi for MOSFETs is ________.
B A
Av 1k –10 k
. B .
. 10  S –50  S
C B
Zo 100 k –1 M
. C .
. 50  S –100  S
D C
None of the above 10 M –100 M
. D .
. 200  S –500  S

D
. 1012  to 1015
14.  The ________ controls the ________ of an FET.
18.  The ________ configuration has the distinct disadvantage of
A requiring two dc voltage sources.
ID, VGS
.
A 22.  The value of gm is at its maximum gm0 at VGS equal to ________
self-bias and zero at VGS equal to ________.
B .
VGS, ID
.
B A
voltage-divider .
C . 0 V, 
IG, VDS
.
C
fixed-bias
D . B
IG, ID .
.  , 0 V
D
All of the above
.
C
15.  Transconductance is the ratio of changes in ________. .
0.5 , 0.3
A 19.  A field-effect transistor amplifier provides excellent voltage gain
ID to VGS
. with the added feature of a ________ input impedance.
D
B A .
ID to VDS low 0.3  , 0.5
. .

C B
VGS to IG medium
. . 23.  A ________ configuration has a voltage gain less than 1.

C A
D high fixed-bias
VGS to VDS . .
.

D B
None of the above self-bias
. .
16.  The ________ configuration has an input impedance, which is
other than RG. C
source-follower
.
A 20.  ________ is an undefined quantity in a JFET.
common-source
.
D
A voltage-divider
Ai .
B .
common-gate
.
B
Av
C . 24.  ________ is a required step in order to calculate Zo.
common-drain
.
C A
Zi Setting IG equal to zero
. .
D
None of the above
.
D B
Zo Setting Vi equal to zero
. .
 C A
Setting ID equal to IDSS
. True
.
D
8.  In a class D amplifier, the low-pass filter
None of the above
. B comes directly after the pulse-width
False modulator.
.
A
25.  The input and output signals are 180º out of phase in a True
________ configuration. .
A
source-follower 4.  Class D amplifier efficiencies can reach
.
practical levels of more than 90%. B
False
.
B
common-gate A
. True
.
C
common-drain
.
B 9.  The common-drain configuration has
False extremely high input resistance.
D
voltage-divider
.
.
A
True
.
5.  There is no phase inversion between the
FET AMPLIFIERS TRUE OR FALSE B
gate and the drain voltages. False
.
1.  In a class D amplifier, the output A
True
transistors are operated in a nonlinear .
mode. 10.  The voltage gain of a common-source
B
A False amplifier is found by the product of gm and
True .
. R d.
A
B True
False 6.  The common-drain amplifier is also called .
.
a source-follower.
B
A False
True .
2.  Generally, higher voltage gains can be .
achieved with bipolar amplifiers than with
FET amplifiers. B
False 11.  The common-gate configuration has
.
A extremely high input resistance.
True
. A
True
7.  A load resistance connected to the output .
B
False of an amplifier reduces the voltage gain.
. B
A False
True .
.
3.  Bypassing a source resistor reduces the
voltage gain. B
False 12.  Digital MOSFET switches are used in the
.
 sample-and-hold circuit of an analog-to- A
2
digital converter. .

A B
True .
10
.
C
5
B .
False
.
D
20
.

13.  In an analog MOSFET switch, the input is

2.  What is the ratio of the capacitive reactance XCS to the input
applied to the gate and the output is taken resistance RI of the input RC circuit of a single-stage BJT
from the source. amplifier at the low-frequency cutoff?
A
A .
0.25
True
.
B
0.50
.
B
False
. C
0.75
.

D
1.0
. A
14.  The common-source configuration has .
15.8 Hz

extremely high input resistance.

B
3.  For which of the following frequency region(s) can the coupling 46.13 Hz
A .
True and bypass capacitors no longer be replaced by the short-
. circuit approximation?
C
238.73 Hz
A .
Low-frequency
B .
False
. D
.
1575.8 Hz
B
Mid-frequency
.

C
High-frequency 5.  The smaller capacitive elements of the design will determine
15.  There is a 180º phase inversion between .
the ________ cutoff frequencies.
the gate and source voltages.
D A
All of the above low
. .
A
True
. B
mid
.
4. Determine the lower cutoff frequency of this network.
B
False C
. .
high

6.  What is the range of the capacitor Cds?

BJT AND FET FREQUENCY RESPONSE
A
0.01 to 0.1 pF
.
1.  A change in frequency by a factor of ________ is equivalent to
1 octave.
B 0.1 to 1 pF
 10.  The larger capacitive elements of the design will determine the
. ________ cutoff frequency. .

C A
0.1 to 1 nF low
. .
14.  For audio systems, the reference level is generally accepted as
B ________.
D mid
0.1 to 1 F .
. A
1 mW
.
C
high
.
B
7.  1W
An amplifier rated at 30-W output is connected to a 5-   .
speaker. Calculate the input voltage for the rated output if the
amplifier voltage gain is 20 dB. C
11.  Which of the following elements is (are) important in 10 mW
determining the gain of the system in the high-frequency .
A
1.225 mV region?
.
D
A 100 mW
Interelectrode capacitances .
B .
12.25 mV
.
B
C Wiring capacitances
122.5 mV . 15.  What is the range of the capacitors Cgs and Cgd?
.
A
C 1 to 10 pF
D Miller effect capacitance .
1.225 V .
.
B
D 1 to 10 nF
All of the above .
.
8.  A 3-dB drop in hfe will occur at a frequency defined by C
________. 1 to 10 F
.
A 12.  The input power to a device is 10,000 W at 1000 V. The output
. D
power is 500 W, and the output impedance is 100  . Find the 1 to 10 F
.
voltage gain in decibels.
B
. A
–30.01 dB
.
16.  For the low-frequency response of a BJT amplifier, the
C maximum gain is where ________ .
1 B
. –20.0 dB
. A
. RB = 0 
D
2 C
. –13.01 dB
. B
. RC = 0 
D
–3.01 dB
9.  . C
An amplifier rated at 30-W output is connected to a 5-  
. RE = 0 
speaker. Calculate the input power required for full power
output if the power gain is 20 dB.
A 13.  By what factor does an audio level change if the power level
3 mW changes from 4 W to 4096 W?
. 17.  In the input RC circuit of a single-stage BJT, by how much does
A the base voltage lead the input voltage at the cutoff frequency
B 2 in the low-frequency region?
30 mW .
.
A
About 0º
B .
C 4
300 mW .
.
B
45º
C .
D 6
3W .
.
C
About 90º
D 8 .
 D .
None of the above
.
21.  What is the ratio of the common logarithm of a number to its
D
natural logarithm? All of the above
.
A
18.  What is the normalized gain expressed in dB for the cutoff 0.435
.
frequencies?
A B 25.  The ________-frequency response of a transformer-coupled
–3 dB 2 system is calculated primarily by the stray capacitance between
. .
the turns of the primary and secondary windings.
B C A
+3 dB 2.3 low
. . .

C D B
–6 dB 3.2 mid
. . .

D C
–20 dB high
. .
22.  Which of the following configurations does (do) not involve the
Miller effect capacitance?
A
19.  Which of the low-frequency cutoffs determined by CS, CC, or Common-emitter 26.  logea = ________ log10a
.
CE will be the predominant factor in determining the low-
frequency response for the complete system? A
2.3
B .
Common-base
A .
lowest
. B
2.718
C .
Common-collector
B .
middle
. C
e
D .
All of the above
C .
highest
. D
1.414
.
D
None of the above 23.  What magnitude voltage gain corresponds to a decibel gain of
.
50?
A 27.  In the hybrid   or Giacoletto model, which one of the following
31.6238 does rb include?
.
20.  Determine the break frequency for this circuit.
A
B Base spreading resistance
316.228 .
.
B
C Base contact
3162.38 .
.
C
D Base bulk
31623.8 .
.
D
All of the above
A .
15.915 Hz
.
24.  By what other name(s) are the cutoff frequencies in a frequency
response plot called?
B
159.15 Hz A 28.  What is the ratio of the output voltage to the input voltage at the
. Corner frequency
. cutoff frequencies in a normalized frequency response plot?
C A
31.85 Hz B 0.25
. Break frequency .
.
D B
318.5 Hz C Half-power frequency 0.50
. .
 C A D
0.707 About 0º 0.25
. . .

D B
1 45º
. .
2.  The ________ region produces the maximum voltage gain in a
single-stage BJT or FET amplifier.
C
About 90º
. A
29.  Which of the following statements is true for a square-wave low-frequency
.
signal?
D
None of the above
A . B
It is composed of both even and odd harmonics. mid-frequency
. .

B C
It is composed only of odd harmonics. 33.  In the ________-frequency region, the capacitive elements of high-frequency
. .
importance are the interelectrode (between terminals)
capacitances internal to the active device and the wiring
C capacitance between the leads of the network. D
It is composed only of even harmonics. None of the above
. .
A
low
D .
The harmonics waveforms are also square waves.
.
B 3.  The resistance associated with the 1-mW power level is
mid ________ , chosen because it is the characteristic impedance
.
of audio transmission lines.
30.  A change in frequency by a factor of ________ is equivalent to C A
1 decade. high 100
. .
A
2
. B
250
.
34.  What is the ratio of the output power to the input power at the
B cutoff frequencies in a normalized frequency response plot?
10
. C
400
A .
0.25
C .
5
. D
600
B .
0.50
D .
20
.
C
0.707 4.  The Miller effect is meaningful in the ________ amplifier.
.
A
31.  Which of the following capacitors is (are) included in Ci for the D inverting
1 .
high-frequency region of a BJT or FET amplifier? .
A B
noninverting
. Input wiring capacitance  .

B
BJT AND FET FREQUENCY RESPONSE FILL IN THE C
inverting/noninverting
. The transition capacitance ( ) .
BLANKS
C D
1.  The magnitude of the third harmonic is ________ of the None of the above
. Miller capacitance  .
magnitude of the fundamental.

D A
All of the above 1
. .
5.  To fix the frequency boundaries of relatively high gain,
________ was chosen to be the gain at the cutoff levels.
B
0.5
. A
0.5Av mid
32.  In the input RC circuit of a single-stage BJT, by how much does .
the base voltage lead the input voltage for frequencies much C
larger than the cutoff frequency in the low-frequency region? 0.33
. B 0.707Av mid
 . A D
significantly smaller –40 dB
. .
C
Av low
. B
smaller
.
13.  A change in frequency by a factor of 2 results in a ________
D
0.5Av high change in the ratio of the normalized gain.
. C
significantly greater
. A
3-dB
.
D
6.  Voltage gains of ________ dB or higher should immediately be None of the above
. B
recognized as being quite high. 6-dB
.
A
3
. C
10.  With a BJT amplifier in the high-frequency region, the 10-dB
.
capacitance Cbe is the ________ of the parasitic capacitances
B while Cce is the ________.
6
. D
20-dB
A .
smallest, largest
C .
20
.
B
largest, smallest 14.  If the parasitic capacitors were the only elements to determine
D .
50 the high cutoff frequency, the ________ frequency would be
.
the determining factor.
C
smallest, medium
. A
lowest
.
7.  The decibel gain of a cascaded system is the ________ of the D
decibel gains of each stage. None of the above
. B
highest
A .
sum
.
C
11.  In the low-frequency region, the ________ low-frequency cutoff lowest or highest
B .
difference determined by CS, CC, or CE will have the greatest impact on
. the network.
D
None of the above
C A .
product highest
. .

D B
quotient average 15.  For the RC-coupled amplifier, the drop in gain at low
. .
frequencies is due to the increasing reactance of ________.
C A
lowest CC
. .
8.  The bandwidth ________ in a multistage amplifier compared to
an identical single-stage amplifier. D B
None of the above Cs
. .
A
increases
.
C
CE
B .
decreases 12.  For two identical stages in cascade, the drop-off rate in the
. high- and low-frequency regions has increased to ________
per decade. D
All of the above
C .
remains the same A
. –3 dB
.
D
None of the above B 16.  The logarithm of a number ________ than 1 is always
. –6 dB
. ________.
A
C greater, negative
–20 dB .
9.  .
 is ________ than   in a common-base configuration.
 20.  At very high frequencies, the effect of Ci is to ________ the
B total impedance of the parallel combination of R1, R2, R3, and D
less, positive 20-dB
. Ci. .

C A
less, negative increase
. .
24.  For any inverting amplifier, the impedance capacitance will be
B ________ by a Miller effect capacitance sensitive to the gain of
D maintain
None of the above . the amplifier and the interelectrode capacitance.
.
A
C unaffected
decrease .
.
17.  The ________ in the Fourier series has the same frequency as B
the square wave itself. D increased
None of the above .
.
A
fundamental
. C
decreased
.
B 21.  The decibel (dB) is defined such that ________ decibel(s) =
third harmonic
. ________ bel(s). D
None of the above
.
C A
fifth harmonic 1, 10
. .

B 25.  The ________ of the upper cutoff frequencies defines a

D 10, 1
seventh harmonic . ________ possible bandwidth for a system.
.
A
C highest, maximum
1, 1 .
.
18.  In the input RC circuit of a single-stage BJT or FET amplifier, B
as the frequency ________, the capacitive reactance ________ D lowest, maximum
10, 10 .
and ________ of the input voltage appears across the output .
terminals.
C
lowest, minimum
A .
increases, decreases, more
.
22.  Logarithms taken to the base ________ are referred to as
common logarithms, while logarithms taken to the base D
None of the above
B ________ are referred to as natural logarithms. .
increases, decreases, less
.
A
10, e
C .
increases, increases, more
.
B
e, 10
D .
decreases, decreases, less
.
C
5, e
.

19.  The ________ configuration displays improved high-frequency D

characteristics over the ________ configuration. 10, 5
.
A
common-collector, common-emitter
.
23.  A change in frequency by a factor of 10 results in a ________
B change in the ratio of the normalized gain.
common-emitter, common-base
.
A
3-dB
C .
common-emitter, common-collector
.
B
6-dB
D .
common-base, common-emitter
.
C
10-dB
.