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PolarHTTM IXTQ 50N20P VDSS = 200 V

Power MOSFET IXTA 50N20P ID25 = 50 A
IXTP 50N20P RDS(on) Ω
= 60 mΩ

N-Channel Enhancement Mode

Preliminary Data Sheet

TO-3P (IXTQ)

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25°C to 175°C 200 V G

VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 200 V D (TAB)
S
VGSM ±20 V
TO-220 (IXTP)
ID25 TC = 25°C 50 A
IDM TC = 25°C, pulse width limited by TJM 120 A
IAR TC = 25°C 50 A
EAR TC = 25°C 30 mJ G (TAB)
D S
EAS TC = 25°C 1.0 J

dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns

TJ ≤ 150°C, RG = 10 Ω TO-263 (IXTA)

PD TC = 25°C 360 W
TJ -55 ... +175 °C G
S
TJM 175 °C
(TAB)
Tstg -55 ... +125 °C

TL 1.6 mm (0.062 in.) from case for 10 s 300 °C G = Gate D = Drain

Maximum tab temperature for soldering 260 °C S = Source TAB = Drain
TO-263 package for 10s
Features
Md Mounting torque (TO-3P / TO-220) 1.13/10 Nm/lb.in.
z
International standard packages
Weight TO-3P 5.5 g z
Unclamped Inductive Switching (UIS)
TO-220 4 g
rated
TO-263 3 g z
Low package inductance
- easy to drive and to protect

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max. Advantages
VDSS VGS = 0 V, ID = 250 µA 200 V z
Easy to mount
z
VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V Space savings
z
High power density
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
PolarHTTM DMOS transistors
IDSS VDS = VDSS 25 µA
utilize proprietary designs and
VGS = 0 V TJ = 150°C 250 µA
process. US patent is pending.
RDS(on) VGS = 10 V, ID = IT 50 60 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

© 2004 IXYS All rights reserved DS99156A(04/04)

 IXTA 50N20P IXTP 50N20P
IXTQ 50N20P

Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline

(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 50 A pulse test 12 23 S

Ciss 2250 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 500 pF
C rss 125 pF

td(on) 26 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 35 ns
td(off) RG = 10 Ω (External) 70 ns
tf 30 ns

Qg(on) 70 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = IT 17 nC
Qgd 37 nC

RthJC 0.42 K/W

RthCK (TO-3P) 0.21 K/W
(TO-220) 0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. typ. Max.
IS VGS = 0 V 50 A

ISM Repetitive 120 A

TO-220 (IXTA) Outline
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t rr IF = 25 A 180 ns
-di/dt = 100 A/µs
QRM VR = 100 V 2.0 µC

Notes: Test current IT = 50 A.

TO-263 (IXTP) Outline

Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
Pins: 1 - Gate 2 - Drain
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
 IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig . 1. Ou tp u t C h ar acte r is tics Fig . 2. Exte n d e d Ou tp u t C h ar acte r is tics
@ 25 º C @ 25 º C
50 100
V G S = 10V V GS = 10V
45 90

40 9V 80

35 70 9V
I D - Amperes

I D - Amperes
30 8V 60

25 50
8V
20 40
7V
15 30

10 20 7V

5 6V 10
6V
0 0
0 0 .5 1 1.5 2 2.5 3 3.5 0 2 4 6 8 10 12 14 16 18 20
VD S - V olts VD S - V olts

Fig . 3. Ou tp u t C h ar acte r is tics Fig . 4. RD S(o n ) No r m aliz e d to 0.5 I D 25

@ 150 º C V alu e vs . Ju n ctio n T e m p e r atu r e
50 3.1

45 V G S = 1 0V 2.8 V GS = 10V
9V
40 2.5
R D S ( o n ) - Normalized

35 2.2
I D - Amperes

I D = 50A
30 8V 1.9
25
1.6
20 I D = 25A
7V 1.3
15
1
10 6V
0.7
5
5V
0.4
0
-50 -25 0 25 50 75 100 125 150 175
0 1 2 3 4 5 6 7 8
VD - V olts TJ - Degrees Centigrade
S

Fig . 5. R D S( o n ) No r m aliz e d to Fig . 6. Dr ain C u r r e n t vs . C as e

0.5 I D 25 V alu e vs . I D T e m p e r atu r e
4. 2 55

V G S = 1 0V 50
3. 8
45
3. 4
R D S ( o n ) - Normalized

40
TJ = 1 75 ºC
3
35
I D - Amperes

2. 6 30

2. 2 25
T J = 1 25 ºC 20
1. 8
15
1. 4
10
1 T J = 2 5 ºC
5
0. 6 0
0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 125 150 175
I D - A mperes TC - Degrees Centigrade

© 2004 IXYS All rights reserved

 IXTA 50N20P IXTP 50N20P
IXTQ 50N20P

Fig . 7. In p u t A d m ittan ce Fig . 8. T r an s co n d u ctan ce

90 36

80 32

70 28

60 24

g f s - Siemens
T J = -40 ºC
I D - Amperes

2 5ºC
50 20
1 50 ºC
40 16

30 TJ = 150ºC 12
25ºC
20 -40ºC 8

10 4

0 0
5 6 7 8 9 10 0 20 40 60 80 10 0 1 20
V G S - V olts I D - A mperes

Fig . 9. So u r ce C u r r e n t vs . Fig . 10. Gate C h ar g e

So u r ce -T o -Dr ain V o ltag e
150 10

9 V D S = 1 00 V
125 8 I D = 2 5A

7 I G = 1 0m A
100
I S - Amperes

V G S - Volts

75 5

4
50 3
TJ = 150ºC

2
25 TJ = 25ºC
1

0 0
0.4 0.6 0. 8 1 1. 2 1. 4 0 10 20 30 40 50 60 70
V S D - V olts Q G - nanoCoulombs

Fig . 12. Fo r w ar d -Bias

Fig . 11. C ap acitan ce Saf e Op e r atin g A r e a
10000 10 00
f = 1MH z
T J = 1 75 ºC
R D S( on) Lim it T C = 2 5ºC
Capacitance - picoFarads

C is s
I D - Amperes

1 00
25 µs
1000 10 0µs

C os s 1m s
10
10 m s
DC

C rs s

100 1
0 5 10 15 20 25 30 35 40 10 10 0 10 00
VD S - V olts VD S - V olts

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
 IXTA 50N20P IXTP 50N20P
IXTQ 50N20P

Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e

0.45

0.40

0.35
R ( t h ) J C - ºC / W

0.30

0.25

0.20

0.15

0.10

0.05
1 10 100 1000
Pu ls e W id th - m illis e c o n d s

© 2004 IXYS All rights reserved