BC546,BC547,BC548 SERIES

NPN GENERAL PURPOSE TRANSISTOR

VOLTAGE 30V/45V/65V POWER 625 mWatts

FEATURES
• NPN epitaxial silicon, planar design
• Collector current I C = 100mA
• Complimentary (PNP) device:BC556,BC557,BC558 Series
• Pb free product :99% Sn above can meet RoHS
environment substance directive request

MECHANICAL DATA
• Case: TO-92
• Terminals: Solderable per MIL-STD-202, Method 208
• Approx Weight : 0.02grams
• Device Marking :

BC546A=546A BC546B=546B -

BC547A=547A BC547B=547B BC547C=547C

BC548A=548A BC548B=548B BC548C=548C

ABSOLUTE MAXIMUM RATINGS

PA RA ME TE R S ymbol Value Uni ts

B C 546 65
C ollector - E mi tter Voltage B C 547 VC E O 45 V
B C 548 30
B C 546 80
C ollector - B ase Voltage B C 547 VC B O 50 V
B C 548 30
B C 546 6.0
E mi tter - B ase Voltage B C 547 VE B O 6.0 V
B C 548 5.0
C ollector C urrent - C onti nuous I C
100 mA

Max P ower D i ssi pati on P TOT 625 mW

O
S torage Temperature TSTG -55 to 150 C

O
Juncti on Temperature TJ -55 to 150 C

THERMAL CHARACTERISTICS

PARAMETER Symbol Value Uni ts

O
Thermal Resi stance, Juncti on to Ambi ent RθJA 200 C /W

STAD-DEC.02.2005 PAGE . 1
 BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS (TJ=25OC, unless otherwise noted)

PA RA M E TE R S ym b o l M IN . T YP. MA X . U ni t s

B C 5 4 6 A ,B 65
C o lle c to r - E mi tte r B re a k d o wn Vo lta g e
B C 5 4 7 A ,B ,C V (B R)C E O 45 - - V
( IC = 1 0 m A , IB = 0 )
B C 5 4 8 A ,B ,C 30
B C 5 4 6 A ,B 80
C o lle c to r - B a s e B re a k d o wn Vo lta g e
B C 5 4 7 A ,B ,C V (B R)C B O 50 - - V
( IC = 1 0 u A , IE = 0 )
B C 5 4 8 A ,B ,C 30

B C 5 4 6 A ,B 6 .0
E mi tte r - B a s e B re a k d o wn Vo lta g e
B C 5 4 7 A ,B ,C V (B R)E B O 6 .0 - - V
( IE = 1 0 u A , IC = 0 )
B C 5 4 8 A ,B ,C 5 .0

E m i t t e r - B a s e C ut o f f C ur r e nt ( V EB= 5 V ) IE B O - - 100 nA

- - 15 nA
C o l l e c t o r - B a s e C u t o f f C u r r e n t ( V C B = 3 0 V , IE = 0 ) IC B O
T J= 1 5 0 OC - - 5 .0 uA
B C 5 4 6 A ,B - 90 -
D C C ur r e nt G a i n B C 5 4 7 A ,B ,C - 150 -
( IC = 1 0 u A , V C E = 5 V ) B C 5 4 8 A ,B ,C - 270 -
hFE -
B C 5 4 6 A ,B 11 0 180 220
( IC = 2 . 0 m A , V C E = 5 V ) B C 5 4 7 A ,B ,C 200 290 450
B C 5 4 8 A ,B ,C 420 520 800
( IC = 1 0 m A , IB = 0 . 5 m A ) - - 0 .2 5
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e V C E ( S AT) V
( IC = 1 0 0 m A , IB = 5 . 0 m A ) - - 0 .6

( IC = 1 0 m A , IB = 0 . 5 m A ) - 0 .7 -
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e V B E ( S AT) V
( IC = 1 0 0 m A , IB = 5 . 0 m A ) - 0 .9 -

( IC = 2 m A , V C E = 0 . 5 m A ) 0 .5 8 0 .6 6 0 0 .7 0
B a s e - E mi tte r Vo lta g e V B E ( S AT) V
( IC = 1 0 m A , V C E = 5 . 0 m A ) - - 0 .7 7

C o l l e c t o r - B a s e C a p a c i t a nc e ( V C B = 1 0 V , IE = 0 , f = 1 M H Z ) C CBO - - 4 .5 pF

LEGAL STATEMENT

Copyright PanJit International, Inc 2005

The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.

STAD-DEC.02.2005 PAGE . 2
 BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC546A,BC547A,BC548A ONLY

300
100 TJ =150˚ C

V CB=30V 250
ICB0, Collector Current (nA)

TJ =100˚ C
200
10

hFE
150 TJ =25 C

100
1
V CE=5V
50

0
0
0.01 0.1 1 10 100 1000
25 50 75 100 125 150
Collector Current, IC (mA)
Junction Temperature, TJ (OC)

Fig. 1. Typical ICB0 vs. Fig. 2. Typical hFE vs.

1200 1000

1000

TJ = 25 ˚C
800 TJ = 100 ˚C
TJ = 100 ˚C
V CE(sat), (mV)
VBE(ON), (mV)

TJ = 150 ˚C
600 100

400 TJ = 25 ˚C
VCE=5V
200 TJ = 150 ˚C IC/IB=20

0 10
0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000
Collector Current, IC (mA) Collector Current, IC (mA)

Fig. 3. Typical VBE(ON) vs. Fig. 4. Typical VCE(SAT) vs.

1200 10

TJ = 25 ˚C
1000
Cib (EB)
TJ = 25 ˚C
Capacitance, C (pF)

800 TJ = 100 ˚C
VBE(sat), (mV)

600

Cob (CB)
400

200 IC/IB=20
TJ = 150 ˚C

0 1
0.01 0.1 1 10 100 0.1 1 10 100
Collector Current, IC (mA) Reverse Voltage (V)

Fig. 5. Typical VBE(SAT) vs. Fig. 6. Typical Capacitances vs.

STAD-DEC.02.2005 PAGE . 3
 BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC546B,BC547B,BC548B ONLY

500
100
450 TJ =150˚ C VCE=5V
VCB=30V
400
ICB0, Collector Current (nA)

350 TJ =100˚ C
10
300

hFE
250 TJ =25 ˚C

200
1 150

100

50

0 0
25 50 75 100 125 150 0.01 0.1 1 10 100 1000

O Collector Current, IC (mA)

Junction Temperature, TJ ( C)

Fig. 1. Typical ICB0 vs. Junction Temperature Fig. 2. Typical hFE vs. Collector Current

1200 1000

1000

TJ = 25 ˚C
800 TJ = 100 ˚C
VBE(ON), (mV)

TJ = 100 ˚C
VCE(sat), (mV)

600 100 TJ = 150 ˚C

400
TJ = 25 ˚C

200 VCE=5V IC/IB=20

TJ = 150 ˚C

0 10
0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000
Collector Current, IC (mA) Collector Current, IC (mA)

Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector Current

1200 10

1000 Cib (EB)

TJ = 25 ˚C TJ = 25 ˚C
Capacitance, C (pF)

800 TJ = 100 ˚C
VBE(sat), (mV)

600

Cob (CB)
400

IC/IB=20
200 TJ = 150 ˚C

0 1
0.01 0.1 1 10 100 0.1 1 10 100
Collector Current, IC (mA) Reverse Voltage (V)

Fig. 5. Typical VBE(SAT) vs. Collector Current Fig. 6. Typical Capacitances vs. Reverse Voltage

STAD-DEC.02.2005 PAGE . 4
 BC546,BC547,BC548 SERIES
ELECTRICAL CHARACTERISTICS CURVE BC547C,BC548C ONLY
1200
100
VCE=5V
VCB=30V 1000 TJ=150˚ C
ICB0, Collector Current (nA)

800 TJ=100˚ C
10

hFE
600 TJ =25 C

400
1

200

0
0
0.01 0.1 1 10 100 1000
25 50 75 100 125 150
Collector Current, IC, (mA)
Junction Temperature, TJ (OC)

Fig. 1. Typical ICB0 vs. Junction Fig. 2. Typical hFE vs. Collector

1200 1000

1000

800 TJ = 100 ˚C TJ = 25 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)

100 TJ = 150 ˚C
600

400
TJ = 25 ˚C

IC/IB=20
200 TJ = 150 ˚C VCE=5V

10
0
0.01 0.1 1 10 100 1000
0.01 0.1 1 10 100 1000
Collector Current, IC (mA)
Collector Current, IC (mA)

Fig. 3. Typical VBE(ON) vs. Collector Current Fig. 4. Typical VCE(SAT) vs. Collector

1200 10

1000
Cib (EB) TJ = 25 ˚C
TJ = 25 ˚C
Capacitance, C (pF)

800 TJ = 100 ˚C
VBE(sat), (mV)

600

400 Cob (CB)

200 IC/IB=20
TJ = 150 ˚C

0 1
0.01 0.1 1 10 100 0.1 1 10 100
Reverse Voltage (V)
Collector Current, IC (mA)

Fig. 5. Typical VBE(SAT) vs. Collector Fig. 6. Typical Capacitances vs. Reverse
STAD-DEC.02.2005 PAGE . 5