Ordering number : ENA0745 2SK4101LS

SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET

2SK4101LS General-Purpose Switching Device

Applications
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching.
• High reliability (Adoption of HVP process).
• Attachment workability is good by Mica-less package.
• Avalanche resistance guarantee.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 650 V
Gate-to-Source Voltage VGSS ±30 V
IDc*1 Limited only by maximum temperature 7 A
Drain Current (DC)
IDpack*2 SANYO’s ideal heat dissipation condition 6.4 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 28 A
2.0 W
Allowable Power Dissipation PD
Tc=25°C (SANYO’s ideal heat dissipation condition) 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *3 EAS 289 mJ
Avalanche Current *4 IAV 7 A
*1 Shows chip capability
*2 Package limited
*3 VDD=99V, L=10mH, IAV=7A
*4 L≤10mH, single pulse
Marking : K4101

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

40407QB TI IM TC-00000656 No. A0745-1/5

 2SK4101LS

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 650 V
Zero-Gate Voltage Drain Current IDSS VDS=520V, VGS=0V 100 µA
Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3 5 V
Forward Transfer Admittance yfs VDS=10V, ID=3.5A 2.3 4.6 S
Static Drain-to-Source On-State Resistance RDS(on) ID=3.5A, VGS=10V 0.85 1.1 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 750 pF
Output Capacitance Coss VDS=30V, f=1MHz 136 pF
Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 28 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 21 ns
Rise Time tr See specified Test Circuit. 40 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 89 ns
Fall Time tf See specified Test Circuit. 31 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=7A 28.5 nC
Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=7A 5.2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=7A 16 nC
Diode Forward Voltage VSD IS=7A, VGS=0V 0.9 1.2 V

Package Dimensions
unit : mm (typ)
7509-002

10.0 4.5
3.2 2.8
3.5
7.2
16.0
16.1

0.6

0.9
3.6

1.2 1.2
14.0

0.75 0.7

1 2 3 1 : Gate
2 : Drain
2.4

3 : Source

2.55 2.55 SANYO : TO-220FI(LS)

Switching Time Test Circuit Avalanche Resistance Test Circuit

VIN VDD=200V L
10V
≥50Ω
0V
RG
ID=3.5A
VIN RL=57Ω

D VOUT 2SK4101LS
PW=10µs 10V
D.C.≤0.5% 50Ω VDD
0V
G

2SK4101LS
P.G RGS=50Ω S

No. A0745-2/5
 2SK4101LS
ID -- VDS ID -- VGS
25 25
Tc=25°C VDS=20V

20 20 Tc= --25°C
10V
Drain Current, ID -- A

Drain Current, ID -- A
15V 8V 25°C
15 15

75°C
10 10

5 5
6V
VGS=5V
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS -- V IT12216 Gate-to-Source Voltage, VGS -- V IT12217
RDS(on) -- VGS RDS(on) -- Tc
3.0 3.0
ID=3.5A
On-State Resistance, RDS(on) -- Ω

On-State Resistance, RDS(on) -- Ω

2.5 2.5

2.0 2.0

0V
=1
Static Drain-to-Source

Static Drain-to-Source
S
, VG
1.5 Tc=75°C 1.5
.5A
=3
ID
1.0 25°C 1.0

--25°C
0.5 0.5

0 0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT12218 Case Temperature, Tc -- °C IT12219
yfs -- ID IS -- VSD
3 3
VDS=20V 2 VGS=0V
Forward Transfer Admittance, yfs -- S

2
10
°C 7
10 25 5
Source Current, IS -- A

7 3
25 °C 2
= --
5
Tc 1.0
C
3
75° 7
5
2
3
2
°C

1.0
0.1
Tc=75

7 7
25°C

--25°C

5 5
3
3 2
2 0.01
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Drain Current, ID -- A IT12220 Diode Forward Voltage, VSD -- V IT12221
SW Time -- ID Ciss, Coss, Crss -- VDS
7 5
VDD=200V f=1MHz
5 3
VGS=10V
2
Switching Time, SW Time -- ns

3
1000 Ciss
Ciss, Coss, Crss -- pF

2 7
5
td (off 3
100 )
2
7 Coss
5 tr 100
tf
7
3 5
td(on) Crss
3
2
2

10 10
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0 10 20 30 40 50
Drain Current, ID -- A IT12222 Drain-to-Source Voltage, VDS -- V IT12223

No. A0745-3/5
 2SK4101LS
VGS -- Qg ASO
10 7
VDS=200V 5 IDP=28A PW≤10µs 10
9 ID=7A 3 µs
2 10
Gate-to-Source Voltage, VGS -- V

8
0µ
10 IDc(*1)=7A 1m s
7

Drain Current, ID -- A
7 5 10 s
IDpack(*2)=6.4A m
3 s
6 2 10
0m
1.0
DC s
5 7 op
5 er
4
ati
3 Operation in on
2
3 this area is
0.1 limited by RDS(on).
7
2
5
3
1
2 Tc=25°C *1. Shows chip capability
0 0.01
Single pulse *2. SANYO's ideal heat dissipation condition
0 10 20 30 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 71000
Total Gate Charge, Qg -- nC IT12224 Drain-to-Source Voltage, VDS -- V IT12225
PD -- Ta PD -- Tc
2.5 40
Allowable Power Dissipation, PD -- W

Allowable Power Dissipation, PD -- W

35
2.0
30

25
1.5

20

1.0
15

10
0.5
5

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT12226 Case Temperature, Tc -- °C IT12227
EAS -- Ta
120
Avalanche Energy derating factor -- %

100

80

60

40

20

0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C IT10478

No. A0745-4/5
 2SK4101LS

Note on usage : Since the 2SK4101LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of April, 2007. Specifications and information herein are subject
to change without notice.

PS No. A0745-5/5