SVF4N65T/F(G)/M_Datasheet

4A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVF4N65T/F(G)/M is an N-channel enhancement mode power

MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.

FEATURES

∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability

NOMENCLATURE

ORDERING INFORMATION

Part No. Package Marking Material Packing

SVF4N65T TO-220-3L SVF4N65T Pb free Tube
SVF4N65F TO-220F-3L SVF4N65F Pb free Tube
SVF4N65FG TO-220F-3L SVF4N65FG Halogen free Tube
SVF4N65M TO-251-3L SVF4N65M Pb free Tube

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 SVF4N65T/F(G)/M_Datasheet

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Ratings
Characteristics Symbol Unit
SVF4N65T SVF4N65F(G) SVF4N65M
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
TC=25°C 4.0
Drain Current ID A
TC=100°C 2.8
Drain Current Pulsed IDM 16 A
Power Dissipation(TC=25°C) 100 33 77 W
PD
-Derate above 25°C 0.80 0.26 0.62 W/°C
Single Pulsed Avalanche Energy (Note 1) EAS 202 mJ
Operation Junction Temperature Range TJ -55～+150 °C
Storage Temperature Range Tstg -55～+150 °C

THERMAL CHARACTERISTICS

Ratings
Characteristics Symbol Unit
SVF4N65T SVF4N65F(G) SVF4N65M
Thermal Resistance, Junction-to-Case RθJC 1.25 3.79 1.62 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 62.5 120 110 °C/W

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 -- -- V
Drain-Source Leakage Current IDSS VDS=650V, VGS=0V -- -- 10 µA
Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V -- -- ±100 nA
Gate Threshold Voltage VGS(th) VGS= VDS, ID=250µA 2.0 -- 4.0 V
Static Drain- Source On State
RDS(on) VGS=10V, ID=2A -- 2.5 2.7 Ω
Resistance
Input Capacitance Ciss -- 464 --
VDS=25V,VGS=0V,
Output Capacitance Coss -- 54 -- pF
f=1.0MHZ
Reverse Transfer Capacitance Crss -- 1.32 --
Turn-on Delay Time td(on) VDD=325V,ID=4.0A, -- 16.6 --
Turn-on Rise Time tr RG=25Ω -- 37.33 --
ns
Turn-off Delay Time td(off) -- 18.0 --
Turn-off Fall Time tf (Note 2,3) -- 19.2 --
Total Gate Charge Qg VDS=520V,ID=4.0A, -- 8.03 --
Gate-Source Charge Qgs VGS=10V -- 2.57 -- nC
Gate-Drain Charge Qgd (Note 2,3) -- 3.03 --

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 SVF4N65T/F(G)/M_Datasheet

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristics Symbol Test conditions Min. Typ. Max. Unit

Continuous Source Current IS Integral Reverse P-N -- -- 4.0
Junction Diode in the A
Pulsed Source Current ISM -- -- 16
MOSFET
Diode Forward Voltage VSD IS=4.0A,VGS=0V -- -- 1.4 V
Reverse Recovery Time Trr IS=4.0A,VGS=0V, -- 190 -- ns
Reverse Recovery Charge Qrr dIF/dt=100A/µs -- 0.53 -- µC
Notes:
1. L=30mH,IAS=3.36A,VDD=150V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.

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 SVF4N65T/F(G)/M_Datasheet

TYPICAL CHARACTERISTICS

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 SVF4N65T/F(G)/M_Datasheet

TYPICAL CHARACTERISTICS(continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-resistance Variation
vs. Temperature vs. Temperature
1.2 3.0
Voltage(Normalized) – BVDSS(V)

Drain-Source On-Resistance
2.5

(Normalized) – RDS(ON)(Ω)
Drain-Source Breakdown

1.1
2.0

1.0 1.5

1.0
0.9
Notes: Notes:
1. VGS=0V 0.5 1. VGS=10V
2. ID=250µA 2. ID=2.0A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature – TJ(°C) Junction Temperature – TJ(°C)

Figure 9-1. Max. Safe Operating Figure 9-2. Max. Safe Operating
Area(SVF4N65T) Area(SVF4N65F(G))
2 2
10 10
Operation in This Area is Operation in This Area is
Limited by RDS(ON) Limited by RDS(ON)

101 100µs 101 100µs

Drain Current - ID(A)

Drain Current - ID(A)

1ms
1ms
10ms
10ms
100 DC 100
DC

10-1 Notes: 10-1 Notes:

1.TC=25°C 1.TC=25°C
2.Tj=150°C 2.Tj=150°C
3.Single Pulse 3.Single Pulse

10-2 10-2
100 101 102 103 100 101 102 103

Drain Source Voltage - VDS(V) Drain Source Voltage - VDS(V)

Figure 9-3. Max. Safe Operating Figure 10. Maximum Drain Current vs.
Area(SVF4N65M) Case Temperature
10 2 5
Operation in This Area is
Limited by RDS(ON)
4
101 100µs
Drain Current - ID(A)

Drain Current - ID(A)

1ms

10ms
3
100
DC
2

10-1 Notes:
1.TC=25°C 1
2.Tj=150°C
3.Single Pulse

10-2 0
100 101 102 103 25 50 75 100 125 150

Drain Source Voltage - VDS(V) Case Temperature – TC(V)

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 SVF4N65T/F(G)/M_Datasheet

TYPICAL TEST CIRCUIT

Gate Charge Test Circuit & Waveform

Same Type VGS

Qg
as DUT 10V
50KΩ
VDS
12V 200nF
300nF

Qgs Qgd

VGS

DUT
3mA
Charge

Resistive Switching Test Circuit & Waveform

RL VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on) tr
ton td(off) tf
toff

Unclamped Inductive Switching Test Circuit & Waveform

1 2 BVDSS
EAS =
L 2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS

RG
DUT VDD ID(t)
10V
VDD VDS(t)
tp
tp Time

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 SVF4N65T/F(G)/M_Datasheet

PACKAGE OUTLINE

TO-220F-3L(1) UNIT: mm

TO-220F-3L(2) UNIT: mm

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 SVF4N65T/F(G)/M_Datasheet

PACKAGE OUTLINE (continued)

TO-220-3L UNIT: mm

TO-251-3L UNIT: mm

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 SVF4N65T/F(G)/M_Datasheet
Disclaimer:
• Silan reserves the right to make changes to the information herein for the improvement of the design and
performance without further notice! Customers should obtain the latest relevant information before placing orders
and should verify that such information is complete and current.
• All semiconductor products malfunction or fail with some probability under special conditions. When using Silan
products in system design or complete machine manufacturing, it is the responsibility of the buyer to comply with
the safety standards strictly and take essential measures to avoid situations in which a malfunction or failure of
such Silan products could cause loss of body injury or damage to property.
• Silan will supply the best possible product for customers!

ATTACHMENT

Revision History

Date REV Description Page

2011.01.18 1.0 Original

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