TSP12N60M / TSF12N

TSP12N60M / TSF12N60M
600V N-Channel MOSFET

General Description Features

This Power MOSFET is produced using True semi‘s - 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V
advanced planar stripe DMOS technology. - Low gate charge ( typical 52 nC)
This advanced technology has been especially tailored to - High ruggedness

N60M
minimize on-state
on state resistance, provide superior switching - Fast switching
performance, and withstand high energy pulse in the - 100% avalanche tested
avalanche and commutation mode. These devices are well - Improved dv/dt capability
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter TSP12N60M TSF12N60M Units

VDSS Drain-Source Voltage 600 V
Drain Current - Continuous (TC = 25℃) 12 12 * A
ID
- Continuous (TC = 100℃) 7.4 7.4 * A
IDM Drain Current - Pulsed (Note 1) 48 48 * A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 865 mJ
IAR Avalanche Current (Note 1) 12 A
EAR Repetitive Avalanche Energy (Note 1) 23 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
Power Dissipation (TC = 25℃) 230 54 W
PD
- Derate above 25℃ 1.85 0.43 W/℃
TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃
Maximum lead temperature for soldering purposes,
TL 300 ℃
1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter TSP12N60M TSF12N60M Units
RθJC Thermal Resistance, Junction-to-Case 0.54 2.33 ℃/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 ℃/W

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 TSP12N60M / TSF12N
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 600 -- -- V

△BVDSS Breakdown Voltage Temperature

ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/℃
/ △TJ Coefficient

VDS = 600 V, VGS = 0 V -- -- 1 uA

IDSS Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125℃ -- -- 10 uA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

N60M
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V
Static Drain-Source
RDS(on) VGS = 10 V, ID = 6 A -- 0.53 0.7 Ω
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 6 A (Note 4) -- 13 -- S

Dynamic Characteristics
Ciss Input Capacitance -- 1850 -- pF
VDS = 25 V, VGS = 0 V,
Coss Output Capacitance -- 180 -- pF
f = 1.0 MHz
Crss Reverse Transfer Capacitance -- 20 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 30 -- ns
tr Turn-On Rise Time VDD = 325 V, ID = 12 A, -- 90 -- ns
RG = 25 Ω
td(off) Turn-Off Delay Time (Note 4, 5)
-- 140 -- ns
tf Turn-Off Fall Time -- 90 -- ns
Qg Total Gate Charge VDS = 520 V, ID = 12 A, -- 52 -- nC
Qgs Gate Source Charge
Gate-Source VGS = 10 V -- 85
8.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 20 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 12 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 12 A, -- 430 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/us (Note 4) -- 5.0 -- uC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD  12A, di/dt  200A/us, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300us, Duty cycle  2%
5. Essentially independent of operating temperature

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 TSP12N60M / TSF12N
Typical Characteristics

VGS
Top : 15
15.0
0V
10.0 V
8.0 V
7.0 V
1
6.0 V 10
ID, Drain Current [A]

ID, Drain Current [A]

5.5 V o
10
1 150 C
5.0 V
Bottom : 4.5 V
o
-55 C
o
25 C
0
10

※ Notes :
0
10 1. 250μ s Pulse Test ※ Notes :

N60M
2. TC = 25℃ 1. VDS = 40V
2 250μ s Pulse Test
2.
-1
0 1
10
10 10 2 4 6 8 10

VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.5
Drain-Source On-Resistancce

IDR, Reverse Drain Current [A]]

1
10
RDS(ON) [Ω ],

VGS = 10V

1.0

0
10

VGS = 20V 150℃

25℃
0.5 ※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
-1
10
0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

3500 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 120V
3000 Crss = Cgd
10
VDS = 300V
VGS, Gate-Source Voltage [V]

2500 Ciss
8 VDS = 480V
Capacitance [pF]

2000
Coss
6
1500

※ Notes ; 4
1000 1. VGS = 0 V
Crss 2. f = 1 MHz

500 2

※ Note : ID = 12A
0 0
-1 0 1
10 10 10 0 10 20 30 40 50 60

VDS, Drain-Source
a Sou ce Voltage
o age [[V]] QG, Total Gate Charge
g [nC]
[ ]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

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 TSP12N60M / TSF12N
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage
e

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0
0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = 250 μ A 0.5
1. VGS = 10 V
2. ID = 6.0 A

N60M
0.8
0 8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
o

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

Operation in This Area 2 Operation in This Area

10
2 is Limited by R DS(on) is Limited by R DS(on)
10

100 s
100 s
1 ms
ID, Drain Current [A]

ID, Drain Current [A]

1
1 ms 10
1
10
10 ms 10 ms
100 ms 100 ms

0 DC 10
0
DC
10

※ Notes :
-1 ※ Notes : 10
-1
10 o
o
1. TC = 25 C
1. TC = 25 C o
o 2. TJ = 150 C
2. TJ = 150 C
3. Single Pulse
3. Single Pulse
-2 -2
10 10
0 1 2 3 0 1 2 3
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for TSP12N60M for TSF12N60M

14

12

10
ID, Drain Current [A]

0
25 50 75 100 125 150

TC, Case Temperature

p [℃]

Figure 10. Maximum Drain Current

vs Case Temperature

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 TSP12N60M / TSF12N
Typical Characteristics (Continued)

0
10

D=0.5
ermal Response

-1
0.2 ※ Notes :
10
1. Zθ JC(t) = 0.54 ℃/W Max.
0.1 2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ JC(t)

N60M
0.05
Zθ JC(t), The

PDM
0.02
0.01 t1
-2
10 single pulse
t2

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1, Square Wave Pulse Duration [sec]

Figure 11-1.
11 1. Transient Thermal Response Curve for TSP12N60M

0
D=0.5
10
Response

0.2 ※ Notes :
1. Zθ JC(t) = 2.33 ℃/W Max.
0.1 2. Dutyy Factor,, D=t1/t2
Zθ JC(t), Thermal R

3. TJM - TC = PDM * Zθ JC(t)

0.05
-1
10
0.02 PDM
0.01
t1
t2
-2
single pulse
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t1, Square
S W
Wave Pulse
P l Duration
D ti [[sec]]

Figure 11-2. Transient Thermal Response Curve for TSF12N60M

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 TSP12N60M / TSF12N
Gate Charge Test Circuit & Waveform

Current Regulator
VGS
Same Type
50KΩ as DUT
Qg
12V 200nF 10V
300nF
VDS
VGS Qgs Qgd

DUT

N60M
3mA
R1 R2

Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor

Resistive Switching
g Test Circuit & Waveforms

RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT
Vin 10%
10V
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
LL 1
EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD

Vary tp to obtain ID BVDSS

required peak ID IAS

RG C VDD ID (t)

DUT
VDD VDS (t)
10V

tp tp Time

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 TSP12N60M / TSF12N
Peak Diode Recovery dv/dt Test Circuit & Waveforms

+
DUT

VDS

--

IS
L

N60M
Driver
VGS

RG Same Type
as DUT VDD

VGS ••dv/dt
dv/dtcontrolled
controlledby
by밨
RGG
••IISSDcontrolled
controlled
byby pulse
Duty 밆?
period
Factor

Gate Pulse Width

VGS D = --------------------------
( Driver ) Gate Pulse Period 10V

IFM , Body Diode Forward Current

IS
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT )
Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop

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