Transistor

2SB0835 (2SB835)
Silicon PNP epitaxial planer type

For low-frequency output amplification

Unit: mm

6.9±0.1 2.5±0.1
1.5
1.5 R0.9 1.0
■ Features

0.4

1.0
R0.9

Low collector to emitter saturation voltage VCE(sat).

2.4±0.2 2.0±0.2 3.5±0.1

●

4.5±0.1
1.0±0.1
● M type package allowing easy automatic and manual insertion as

7
0.
R
well as stand-alone fixing to the printed circuit board.

4.1±0.2
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0.85

■ Absolute Maximum Ratings (Ta=25˚C) 0.55±0.1 0.45±0.05

1.25±0.05
tin nc
Parameter Symbol Ratings Unit

e)
d
typ
3 2 1
Collector to base voltage VCBO –20 V

d
on e.
ue
isc ag
Collector to emitter voltage VCEO –18 V

tin
, d st
on na
Emitter to base voltage VEBO –5 V 2.5 2.5

ed cle
yp cy
Peak collector current ICP –2 A

d t ife
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Collector current IC –1 A 1:Base

tin uc
2:Collector EIAJ:SC–71
sc te

Collector power dissipation PC* 1 W

on rod
3:Emitter M Type Mold Package
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Junction temperature Tj 150 ˚C

d d fou

Storage temperature Tstg –55 ~ +150 ˚C

Di ain

ne ng
pla wi

* Printed circuit board: Copper foil area of 1cm2 or more, and the board
e, ollo

thickness of 1.7mm for the collector portion

typ s f
ce de

■ Electrical Characteristics
an clu

(Ta=25˚C)
en in
M

int ed

Parameter Symbol Conditions min typ max Unit

ma inu
e, ont

ICBO VCB = –10V, IE = 0 –1 µA

Collector cutoff current
typ isc

ICEO VCE = –18V, IB = 0 –10 µA

ce /D
an ce

Collector to base voltage VCBO IC = –10µA, IE = 0 –20 V

en an

Collector to emitter voltage VCEO IC = –1mA, IB = 0 –18 V

int ten
ma ain

Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V

M

hFE1* VCE = –2V, IC = –0.5A 130 280

Forward current transfer ratio
hFE2 VCE = –2V, IC = –1.5A 50
ed
lan

Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –50mA – 0.5 V

(p

Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA –1.2 V

Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz 200 MHz
Collector output capacitance Cob VCB = –6V, IE = 0, f = 1MHz 40 pF

*h Rank classification
FE1

Rank R S
hFE1 130 ~ 210 180 ~ 280

Note.) The Part number in the Parenthesis shows conventional part number.

208
Transistor 2SB0835

PC — Ta VCE(sat) — IC VBE(sat) — IC
1.2 –100 –100

Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=20 IC/IB=20

Base to emitter saturation voltage VBE(sat) (V)

Printed circut board: Copper
foil area of 1cm2 or more, and
Collector power dissipation PC (W)

the board thickness of 1.7mm –30 –30

1.0
for the collector portion.
–10 –10

0.8
–3 –3
25˚C Ta=–25˚C
0.6 –1 –1
75˚C
– 0.3 Ta=75˚C – 0.3
0.4 25˚C

– 0.1 –25˚C – 0.1

0.2
– 0.03 – 0.03

0 – 0.01 – 0.01
0 20 40 60 80 100 120 140 160 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10

ue e/
Ambient temperature Ta (˚C) Collector current IC (A) Collector current IC (A)

tin nc hFE — IC Cob — VCB

e)
d
typ
600 120

d
VCE=–2V IE=0

on e.
ue
(pF)

f=1MHz

isc ag
tin
Forward current transfer ratio hFE

Ta=25˚C

, d st
on na
500 100
ob

ed cle
Collector output capacitance C

yp cy
d t ife
400 Ta=75˚C 80

ue t l
tin uc
sc te

300 25˚C on rod 60

isc r P
d d fou

–25˚C
200 40
Di ain

ne ng
pla wi

100 20
e, ollo

2SB
typ s f
ce de

0 0 Type
an clu

– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 –1 –3 –10 –30 –100

en in
M

Collector current IC (A) Collector to base voltage VCB (V)

int ed
ma inu
e, ont
typ isc
ce /D
an ce
en an
int ten
ma ain
ed M
lan
(p

209
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ue e/
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tin nc

e)
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d
yp
defect which may arise later in your equipment.

dt
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

on e.
ue
isc ag
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

tin
, d st
on na
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

ed cle
yp cy
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

d t ife
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tin uc
sc te

on rod
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
isc r P
d d fou

20080805
Di ain

ne ng
pla wi
e, ollo
typ s f
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an clu
e n in
M

int ed
ma inu
e, ont
typ isc
ce /D
an ce
en an
int ten
ma ain
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