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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 27: Introduction to Bipolar Transistors
Muhammad Ashraful Alam
alam@purdue.edu
Alam ECE‐606 S09 1
Background
E B C
E C
Base!
n++
Double p base
n‐collector
Diffused BJT n+
n+ p n n+
emitter base collector
Alam ECE‐606 S09
Modern Bipolar Junction Transistors (BJTs)
Base Emitter Collector
N+
N‐
N
P+ N+
N
SiGe intrinsic base Dielectric trench
P‐
Alam ECE‐606 S09 4
Symbols and Convention
E Symbols
Poly emitter
Poly emitter NPN PNP
N+
Collector Collector
B P Low‐doped base
p
Base Base
N
Collector doping
optimization
Emitter Emitter
C
IC+IB+IE=0
VEB+VBC+VCE=0
Alam ECE‐606 S09 5
Outline
1)) Equilibrium and forward band‐diagram
q g
2) Currents in bipolar junction transistors
3) Eber
Eber’ss Moll model
Moll model
4) Conclusions
Alam ECE‐606 S09 6
Topic Map
Equilibrium DC Small
Small Large
Large Circuits
signal Signal
Diode
Schottky
BJT/HBT
MOS
Alam ECE‐606 S09 7
Band Diagram at Equilibrium
∇ • D = q ( p − n + N D+ − N A− ) Equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q
Alam ECE‐606 S09 8
Band Diagram at Equilibrium
Vacuum χ2
level
χ1 χ3
EC
EF
EV
Alam ECE‐606 S09 9
Electrostatics in Equilibrium
2 k sε 0 NE 2 k sε 0 NC
x p , BE = Vbi x p , BC = Vbi
q NB ( NE + NB ) q N B ( NC + N B )
2 k sε 0 NB
xn , E = Vbi 2k sε 0 NB
q NE ( NB + NE ) xn ,C = Vbi
q NC ( NC + N B )
Alam ECE‐606 S09 10
Outline
1) Equilibrium and forward band‐diagram
2) Currents in bipolar junction transistors
3) Eber’s Moll model
4) Conclusions
Alam ECE‐606 S09 11
Topic Map
Equilibrium DC Small
Small Large
Large Circuits
signal Signal
Diode
Schottky
BJT/HBT
MOS
Alam ECE‐606 S09 12
Band Diagram with Bias
∇ • D = q ( p − n + N D+ − N A− ) Non‐equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q
Alam ECE‐606 S09 13
Electrostatics in Equilibrium
2k sε 0 NE 2k sε 0 NC
x p , BE = (Vbi − VEB ) x p , BC = (Vbi − VCB )
q NB ( NE + NB ) q N B ( NC + N B )
2 k sε 0 NB 2 k sε 0
xn , E = (Vbi − VEB ) xn , C =
NB
(Vbi − VCB )
q NE ( NB + NE ) q NC ( NC + N B )
VEB
VCB
14
Current flow with Bias
EC‐Fn,E
V
Fp,B‐EEV
EC‐Fn,C
Alam ECE‐606 S09 15
Coordinates and Convention
N+ P N
X’’
X X X’
X
0 W
N E = N D, E N B = N A, B N C = N A, C
DE = DP DB = DN DC = DN
nE 0 = n p 0 pB 0 = pn 0 nC 0 = nn 0
Alam ECE‐606 S09 16
Carrier Distribution in Base
⎛ x ⎞ ⎛ x ⎞
Δn( x) = Ax + B = C ⎜1 − ⎟ + D⎜ ⎟
C ⎝ WB ⎠ ⎝ B⎠
W D
ni2,B ⎛ ⎞ ni2,B qVBC β ⎛ x ⎞
Δn( x) = (e qVBE β
− 1) ⎜1 −
x
⎟ + (e − 1)⎜ ⎟
NB ⎝ WB ⎠ N B ⎝ B⎠
W
ni2, B
Δn(0+ ) =
NB
( eqVBE β − 1) Δn( x = WB ) =
ni2, B
(e qVBC β
)
−1
NB
VEB
VCB
Alam ECE‐606 S09 17
Collector and Emitter Electron Current
ni2, B ⎛ x ⎞ ni , B qVBC β
2
⎛ x ⎞
Δn( x) = ( e qVBE β
− 1) ⎜1 − ⎟+ ( e )
−1 ⎜ ⎟
NB ⎝ W B ⎠ N B ⎝ B⎠
W
2 2
J n,C = qDn
dn
dx WB
=−
WB N B
(
qDn ni , B qVBE β
e − 1) +
WB N B
e (
qDn ni , B qVBC β
−1 )
VBE
VBE
dp
J p , E = − qD p
dx
D p ni2 qVBE β
=−
Wn N D
( e − 1)
Alam ECE‐606 S09 18
Current‐Voltage Characteristics
2 2
Normal, Active Region J n,C =−
WB N B
(
qDn ni , B qVBE β
e − 1) +
WB N B
(
qDn ni , B qVBC β
e )
−1
EB: Forward biased
EB: Forward biased
BC: Reverse biased
JC log10 JC High‐level injection
g j
series resistance, etc.
IB
> 60 mV/dec.
60 V/d
VBE
VCE
1)) Equilibrium and forward band‐diagram
q g
2) Currents in bipolar junction transistors
3) Ebers Moll model
Ebers Moll model
4) Conclusions
Alam ECE‐606 S09 20
Ebers Moll Model Hole diffusion in collector
2
⎡ qDn ni2, B qDp ni2,C ⎤ qVBC β
IC = − A
WB N B
(
qDn ni , B qVBE β
e − 1) + A ⎢ + ⎥ e ( −1 )
⎣ WB N B WC NC ⎦
( )
≡ α F I F 0 ( eqVBE β − 1) − I R 0 eqVBC β − 1 IC=IIc,n+IIc,p
IF IR
E C IE=IE,n+IE,p
IC
I F = I F 0 ( e qVBE β − 1)
IE
α RI R αF IF
B IB
(
I R = I R 0 e qVBC β − 1 )
⎡ qD p ni2, E qDn ni2, B ⎤ qVBE β 2
IE = − A ⎢ + ⎥ (e − 1) + A (
qDn ni , B qVBC β
e −1 )
⎣ WE N E WB N B ⎦ WE N B
(
≡ I F 0 ( e qVBE β − 1) − α R I R 0 e qVBC β − 1 )
21
Common Base Configuration
IF IR
E C E C
VEB IE N P N IC VCB α RI R αF IF
(out) IE IC
(in)
B B B
CBE CBC
IB
How would the model change if this was a Schottky barrier BJT?
Alam ECE‐606 S09 22
Common Emitter Configuration
E
Cμ
IE
C
CBE α RIR IF
P IC IR
B IB
VEC
N
(out) B Cπ αF IF − αRIR
VEB P+ IB αF IF
(i )
(in)
βF
E E CBC α FIF IR
αF IF αF IF
IC = = (1 − α F ) I F = I B
βF α F
1 − αF
This
h is a practice problem
bl …
Alam ECE‐606 S09 23
Conclusion
• The physics of BJT is most easily understood with
reference to the physics of junction diodes
reference to the physics of junction diodes.
• The equations can be encapsulated in simple
equivalent circuit appropriate for dc, ac, and large
g pp
signal applications.
• Design of transistors is far more complicated than
thi i l
this simple model suggests.
d l t
• For a terrific and interesting history of invention of
bipolar transistor, read the book “Crystal Fire”.
Alam ECE‐606 S09 24