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!n ( x = 0 ) =
ni2 qVA kBT
NA
e ( " 1
)
where
x = 0 is
the
beginning
of
the
neutral
base
and
V A
is
the
forward
bias
across
the
junction.
In
a
BJT,
we
have
two
junctions.
At
x = 0 ,
the
emitter-‐base
junction
controls
!n ( x = 0 ) ,
so
!n ( x = 0 ) =
ni2 qVBE
N AB
e ( k BT
" 1
)
At
the
end
of
the
neutral
base,
x = WB ,
the base-‐collector
junction
controls
!n ( x = WB ) ,
so
!n ( x = WB ) =
N AB
(
ni2 qVBC kBT
e " 1
)
So
if
we
know
the
bias
across
each
junction,
then
we
know
!n
at
each
end
of
the
base.
Since
the
base
is
assumed
to
be
short,
we
simply
connect
the
two
end
points
with
a
straight
line.
Forward
active
region
means:
The
emitter
base
junction
is
forward
biased
( VBE > 0 )
and
the
base
collector
junction
is
reverse-‐biased
VBC < 0 .
(
!n x = 0 =
ni2 qVBE
N AB
)e ( k BT
"1 )
( )
2
n
(
!n x = WB = ) i
N AB
qV
e BC
k BT
"1
For
a
moderate
forward
bias
on
the
emitter-‐base
junction,
the
exponential
in
the
first
equation
dominates,
so
to
a
very
good
approximation:
n2 qV k T n2
( )
!n x = 0 " i e BE B >> i
N AB N AB
For
a
moderate
reverse
bias
on
the
base-‐collector
junction,
the
exponential
in
the
second
equation
above
approaches
zero,
so
to
a
very
good
approximation:
Additional
note:
We
could
also
ask
about
the
total
electron
density,
not
just
the
excess
electron
density.
In
that
case,
we
would
have:
n2 n2 qV k T n2
( ) ( N AB N AB
)
n x = 0 = !n x = 0 + i = i e BE B >> i
N AB
ni2 n2 qV
( )
n x = WB = !n x = WB + ( ) = i e BC
N AB N AB
k BT
" 0
1b)
Sketch
!n ( x ) vs.
x
for
the
saturation
region
of
operation.
Solution:
Saturation
region
means:
The
emitter
base
junction
is
forward
biased
( VBE > 0 )
and
the
base
collector
junction
is
forward-‐biased
VBC > 0 .
n2
( n2
!n ( x = 0 ) = i eqVBE kBT " 1 = i eqVBE kBT >> i
N AB N AB
) n2
N AB
!n ( x = 0 ) >> 0
!n ( x = WB ) =
ni2 qVBC
N AB
e ( k BT
"1 = )
ni2 qVBC
N AB
e
k BT
>>
ni2
N AB
0 << !n ( x = WB ) < !n ( x = 0 )
1c)
Sketch
!n ( x ) vs.
x
for
the
reverse
active
region
of
operation.
Reverse
active
region
means:
The
emitter
base
junction
is
reverse
biased
( VBE << 0 )
and
the
base
collector
junction
is
forward-‐biased
VBC > 0 .
n2
(
!n ( x = 0 ) = i eqVBE kBT " 1 = " i
N AB
) n2
N AB
!n ( x = 0 ) " 0
!n ( x = WB ) =
ni2 qVBC
N AB
e ( k BT
"1 =) ni2 qVBC
N AB
e k BT
>>
ni2
N AB
!n ( x = WB ) >> 0
Again,
the
small
negative
excess
carrier
concentration
is
exaggerated
for
clarity.
HW
Week
14
Solutions
(continued)
1d)
Sketch
!n ( x ) vs.
x
for
the
cut-‐off
region
of
operation.
Reverse
active
region
means:
The
emitter
base
junction
is
reverse
biased
( VBE << 0 )
and
the
base
collector
junction
is
reverse-‐biased
VBC << 0 .
(
n2 qV k T
!n ( x = 0 ) = i e BE B " 1 = " i
N AB
) n2
N AB
!n ( x = 0 ) " 0
!n ( x = WB ) =
ni2 qVBC
N AB
e ( k BT
)
"1 = "
ni2
N AB
!n ( x = WB ) " 0
Again,
the
small
negative
excess
carrier
concentrations
are
exaggerated
for
clarity.
2) The
sketch
below
shows
an
NPN
BJT.
Assume
that
it
is
in
the
forward
active
region
with
I C = 1.23 mA
and
I E = 1.27 mA .
Answer
the
following
questions.
3a)
What
is
the
emitter
injection
efficiency?
Solution:
We
want
the
emitter
current
to
consist
almost
entirely
of
electrons
injected
into
the
base,
but
we
also
get
hole
injected
from
the
base
to
the
emitter.
The
emitter
injection
efficiency,
! ,
is
the
ratio
of
the
current
we
want
to
the
total
current
across
the
forward
emitter-‐base
junction.
I En 1.000
! " = = 0.995
! = 0.995
I En + I Ep 1.000 + 0.005
4a)
What
is
I Ep ?
Solution:
Since
the
base
is
short,
the
base
transport
factor,
! T ,
is
very
close
to
1.
Since,
I Cp = ! T I Ep ,
we
conclude
that
I Ep = I Cp
I Ep = 10 mA
4b)
What
is
I En ?
Solution:
In
the
active
region,
I C ! I Cp = 10 mA
In
the
active
region,
the
base
current
is
I B = I C ! dc = 0.1 mA
Since
the
base
is
short,
I B = I En ,
so
we
conclude
I En = 0.1 mA
4c)
What
is
I Cn ?
Solution:
Since
the
base-‐collector
junction
is
zero-‐biased,
I Cn = 0 mA
5a)
What
type
of
transistor
is
this?
NPN
or
PNP?
Explain
how
you
know.
Solution
PNP.
The
plot
shows
the
excess
minority
carrier
densities
in
each
region,
so
the
majority
carriers
are
Emitter:
holes,
Base:
electrons,
Collector:
holes.
Hence,
it
is
a
PNP
transistor.
!p ( x = 0 ) =
N DB
e(
ni2 qVBE kBT
)
" 1
and the excess electron concentration injected into the emitter as
!n ( x " = 0 ) =
N AE
e (
ni2 qVBE kBT
)
# 1
Solution:
The
base
width
is
much
shorter
than
a
minority
carrier
diffusion
length
There
is
a
clear,
linear,
minority
carrier
diffusion
profile,
which
indicates
that
recombination
is
negligible,
so
the
minority
carrier
diffusion
length
is
much
longer
than
the
base
width
and
recombination
is
negligible.
5e)
What
is
the
emitter
injection
efficiency
(numerical
answer)?
Solution:
The
hole
current
injected
from
the
emitter
to
the
base
is
( )
D n2
J Ep = q p i eqVEB /kBT ! 1
WB N DB
(The
base
is
short,
so
we
use
the
base
width,
not
the
diffusion
length.)
The
electron
current
injected
from
the
base
to
the
emitter
is
D n2
(
J En = q n i eqVEB /kBT ! 1
Ln N AE
)
(The
emitter
is
long,
so
we
use
the
electron
diffusion
length,
not
the
emitter
width.)
For
later
use,
we
note:
J En Dn WB N DB
=
J E p D p Ln N AE
The
emitter
injection
efficiency
is
(1
JE p 1 " D W N %
! = = = $ 1+ n B DB '
J E p + J En 1+ J En J E p # D p Ln N AE &
Putting
in
numbers:
(1 (1
" D W N % " 20 cm 2 s 0.2 µm 1017 cm -3 %
( )
(1
! = $ 1+ n B DB ' = $ 1+ ) ) ' = 1+ 0.04 = 1.04
# D p Ln N AE & # 10 cm 2 s 1.0 µm 1018 cm -3 &
! = 0.96
( )
D p ni2 qV /k T
J Ep = J Cp = J C = q e EB B ! 1
WB N DB
Because
there
is
no
recombination
in
the
base:
(
D n2 qV /k T
J En = J B = q n i e EB B ! 1
Ln N AE
)
J C D p Ln N DB
! dc " = = 25
! dc = 25
J B Dn WB N AE
A
quicker
way
to
get
this
answer
is
to
use
" 0.96
! dc = = = 24
1# " 1# 0.96
(Difference
is
due
to
round-‐off
error.)