Experiment No: - 4

Date: - 04/10/2010

Name of the Experiment: -

Familiarization With Layout Tool ( Microwind ) &

Design Rules.

Objective:-
(i) Draw the Layout of a n-channel MOSFET with width 0.5um
and length 0.25um using Microwind and simulate it for
MOS characteristics curves.

(ii) Generate the netlist file.

Procedure:-
(i) By double clicking on Microwind icon, open microwind. We
will see a black window with grid points and a palette on
the right side with different layers for layout assigned with
different colors. The layout window features grid scale in λ
units.

(ii) Selecting the technology: Go to file  Select Foundry.

From the ‘rules’ folder, select the cmos025.rul file. The
0.25um technology thus gets selected. This means 1 grid
point spacing is λ =0.25/2=0.125um on the window.

(iii) Select current layer into N+ diffusion by a click on the

palette of the Diffusion N+ button. Draw an n-diffusion box
at the bottom of the drawing as in Figure 1. N diffusion
boxes are represented in green. The width of this n-
diffusion box is 0.5um = 4 λ. The length of the box is 14 λ.

(iv) Now select the Polysilicon from the palette. Fix the first
corner of the box with the mouse. While keeping the
 mouse button pressed, move the mouse to the opposite
corner of the box. Release the button. This creates a box in
polysilicon layer as shown in Figure2. The box width should
not be inferior to 2 λ =0.25um, which is the minimum
width of the polysilicon box. Thus the length of the
transistor is 0.25 um.

(v) Draw the contact layer of 2 λ*2 λ by selecting contact from

the palette.

(vi) Draw the metal layer as shown in fig: 3.This completes the
drawing of the MOSFET.

Fig1: The n diffusion box drawn.

Fig2: The polysilicon box drawn.

 Fig3: The Layout of the MOSFET.

Vertical Aspect of the MOS:

Click on this icon to access process simulation (Command Simulate ->
Process section in 2D). The cross section is given by a click of the mouse at
the first point and the release of the mouse at the second point.

MOS Static Characteristic:-

Click on MOS characteristics icon. The screen shown in Fig 4 appears. It
represents the Id/Vd static characteristics of the nMOS device. In addition it
shows the length and width of the transistor formed is 0.5um and length is
0.25um.
 Fig4: MOS characteristics of the drawn MOSFET.

Dynamic MOS Behavior:-

(a) Apply a clock to the gate. Click on the Clock icon and then, click on the
polysilicon gate. The clock menu appears again. Change the name into
<< clock 1 >> and click on ok to apply a clock.

(b) Apply a clock to the drain. Click on Clock icon, click on the left
diffusion. The clock menu appears again. Change the name into <<
clock 2 >> and click on ok to apply a clock.

(c) Watch the output: Click on the Visible icon and then, click on the right
diffusion. Click Ok. The Visible property is then sent to the node. The
associated text << s1>> is in italic, meaning that the waveform of this
node will appear at the next simulation.

Click on File  Save as. Anew window appears, into which you
enter the design name. Type my MOS. Then click ‘Save’. The
design is saved under that file name.
 Fig5: Analog Simulation of the MOS Device.

Discussion:-
When the gate is at zero, no channel exists so the nodes s1 is disconnected
from the drain. When the gate is on, the source copies the drain. It can be
observed that the nMOS device drives well at zero but poorly at high voltage.
The highest value of s1 is around 2.0V that is Vdd minus the threshold
voltage. This means that the n-channel MOS device do not drives well logic
signal 1.