SemiWell Semiconductor SBN13001

High Voltage Fast-Switching NPN Power Transistor

Features
Symbol
○ 2.Collector
- Very High Switching Speed (Typical 120ns@100mA)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 120mV@100mA/20mA) 1.Base ○

c
- Wide Reverse Bias S.O.A
○ 3.Emitter

General Description
TO-92
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.

1
23

Absolute Maximum Ratings

Symbol Parameter Value Units

VCES Collector-Emitter Voltage ( VBE = 0 ) 700 V

VCEO Collector-Emitter Voltage ( IB = 0 ) 400 V

VEBO Emitter-Base Voltage ( IC = 0 ) 8.0 V

IC Collector Current 0.2 A

ICM Collector Peak Current ( tP ＜ 5 ms ) 0.4 A

IB Base Current 0.1 A

IBM Base Peak Current ( tP ＜ 5 ms ) 0.2 A

PC Total Dissipation at TA = 25 °C 750 mW

TSTG Storage Temperature - 65 ~ 150 °C

TJ Max. Operating Junction Temperature 150 °C

Thermal Characteristics
Symbol Parameter Value Units

RθJA Thermal Resistance, Junction-to-Ambient 166 °C/W

Oct, 2002. Rev. 1 1/4

Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved
SBN13001

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol Parameter Condition Min Typ Max Units

Collector Cut-off Current VCE = 650V 1.0

ICEV - - mA
( VBE = - 1.5V ) VCE = 650V TC = 100 °C 5.0

Collector-Emitter Sustaining Voltage

VCEO(sus) IC = 1 mA 400 - - V
( IB = 0 )

IC = 50mA IB = 10mA 0.3

VCE(sat) Collector-Emitter Saturation Voltage - - V
IC = 100mA IB = 20mA 0.4

VBE(sat) Base-Emitter Saturation Voltage IC = 50mA IB = 10mA - - 1 V

IC = 50mA VCE = 10V 10

hFE DC Current Gain
IC = 100mA VCE = 10V 10 - 30

Resistive Load IC = 100mA VCC = 125V

ton Turn-On Time IB1 = 20mA IB2 = -20mA 0.2 1.0
- ㎲
ts Storage Time 1.5 3.0
TP = 25㎲
tf Fall Time 0.15 0.4

Inductive Load VCC = 15V IC = 100mA

ts Storage Time IB1 = 20mA IB2 = -50mA - 2.0 4.0 ㎲
tf Fall Time L = 0.35mH Vclamp = 300V 0.12 0.3

VCC = 15V IC = 100mA

Inductive Load IB1 = 20mA IB2 = -50mA
ts Storage Time - 2.4 5.0 ㎲
L = 0.35mH Vclamp = 300V
tf Fall Time 0.15 0.4
TC = 100 °C

※ Notes :

Pulse Test : Pulse width ≤ 300㎲, Duty cycle ≤ 2%

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 SBN13001

Fig 1. Static Characteristics Fig 2. DC Current Gain

0.5 25

0.4 IB=70mA o
TJ = 125 C
IB=60mA
IC,Collector Current[A]

20

hFE, DC Current Gain

IB=50mA
0.3 IB=40mA
o
IB=30mA
TJ = 25 C

0.2 IB=20mA 15

IB=10mA
0.1
※ Notes :
10 VCE = 5V
IB=0mA
0.0
0 1 2 3 4 5 1E-3 0.01 0.1
VCE,Collector-Emitter Voltage[V] IC, Collector Current [A]

Fig 3. Collector-Emitter Saturation Voltage Fig 4. Base-Emitter Saturation Voltage

1 1.0
VCE,Collector-Emitter Voltage[V]

0.9
VBE,Base-Emitter Voltage[V]

o
o
0.8
TJ=25 C
TJ=125 C
0.1

o
TJ=25 C 0.7
o
TJ=125 C

0.6
※ Notes : ※ Notes :
hFE = 5 hFE = 5

0.01 0.5
0.01 0.1 0.01 0.1

IC,Collector Current[A] IC,Collector Current[A]

Fig 5. Safe Operation Areas Fig 6. Power Derating Curve

0
10 125

100
Power Derating Factor(%)
IC,Collector Current[A]

-1
10
75

DC 50
-2
10

25

-3
10 0
10
0
10
1 2
10 10
3
0 50 100 150 200
o
VCE,Collector-Emitter Clamp Voltage[V] TC,Case Temperature( C)

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 SBN13001

Inductive Load Switching & RBSOA Test Circuit

LC

f
IC
IB1 VCE
IB
D.U.T
RBB VClamp VCC
VBE(off)

Resistive Load Switching Test Circuit

RC

IC
IB1 VCE
IB
D.U.T
RBB VCC
VBE(off)

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