Improved Transistor modelling on Multisim using

effective SPICE parameter extraction technique

Project

BJT Transistors
A transistor which is bipolar in nature consists of three layers often compared to a sandwich.
Need not saying, these layers are basically doped(extrinsic) semiconductor materials. Either
p-n-p or n-p-n transistor, each of their layer is given a specific name and is provided a
connection to the circuit. A PNP and a NPN transistor is differentiated on the basis of their
functioning while operation which is the proper biasing(polarity) of the junctions .

Figure_01: (a)Small and large controlling current’s direction for a PNP transistor

(b)Small and large controlling current’s direction for an NPN transistor

In the above figure we can see the directions of current in both a PNP and NPN transistor for
different controlling currents. The main task of using a transistor is to restrict the flow of
current to an extent on the basis of a smaller, controlling current. It depends on the transistor
type whether the main current will pass through from collector to emitter (NPN) or emitter to
collector (PNP). The same goes for the controlling smaller current which flows from base to
emitter in an NPN transistor and emitter to base in a PNP transistor. The arrow always indicates
the flowing direction of the current according to the standards of semiconductor symbology.

Circuit Design & Simulation

At first, the components of necessary transistors have been selected from the Multisim
component placing toolbar. After that, the selected component has been connected through a
wire.

At the beginning of simulation stage, the DC sweep option from the simulation toolbar has
been selected. After that, the input parameters and required output parameters for extraction
of BJT, PNP & NPN transistors have been fixed for achieving the required simulation study
result.

For the characteristic curve we will calculate and plot the collector currents and specific area
voltages of the respective transistor types.

Ic= The collector current, Ic, of a transistor is the amplified output current of a bipolar junction
transistor.

There are several ways to find the collector current, Ic, of a transistor. And it all depends on
what information is already known about the transistor:

Vce= Vce is the voltage that falls across the collector-emitter junction of a bipolar
junction transistor. Vce is a crucial voltage of a transistor circuit because it determines
the transistor's load line and q-point.

Vbe=Vbe is the voltage that falls between the base and emitter of a bipolar
junction transistor. Vbe is approximately 0.7V for a silicon transistor. For a
germanium transistor (which is rarer), Vbe is approximately 0.3V.

Ib=Ib simply indicates the base current of a bipolar transistor.

After calculating Ic and Vce for different voltage ranges the values will be plotted to get the
characteristic curve.

BC547 NPN
BC 547 is a bipolar NPN transistor. In this section there will be description of circuit components
and design needed for DC transfer characteristics in Ni Multisim. And Later there will be
simulation of the DC transfer characteristics in the Ni Multisim for 0 to 20 Volts at 5 Volts
interval

Circuit components
1. BC547 Transistor
2. DC voltage source (VCE)
3. DC voltage Source (V2)
4. Resistor 20 K ohm
5. Resistor 1 K ohm
6. Ground

Circuit Diagram

Fig 01: Circuit Diagram using BC547

Data for Calculation

Here,

As per the simulation results, in point 0 there was no collector current.

Considering point 1 when base current Ib =15x10^-6 amperes

Measured collector current Ic = 0.3094x10^-3 amperes

Now by mesh analysis we get,

In left loop, BAT2-IbxRV1=0

So, Ib =15x10^-6 amps

In second loop, Vce+Ic(R1)-BAT1=0

Using Ic = .2939x10^-3 when trace Ib= 15x10^-6 amps

Vce= BAT1-Ic(R1) = .044 V

Which is almost of the same value as simulation result for Voltage from collector towards
emitter (Vce).

Table 01: Vce and Ic for Ib ranging from 5-25 μAmps

Typ BJT Ic /
e: Vce
Tra Ib=25.0 Ib=20.0 Ib=15.0 Ib=10.0 Ib=5.0µ
ce: µA µA µA µA A
Ib=25.0 Ib=20.0 Ib=15.0 Ib=10.0 Ib=5.0µ
Tag: µA µA µA µA A
Col DarkRe
our: Red d Green Lime Blue
Poi
nt Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA)
0.0034 0.0032 0.0033 0.0031
0 0.003 0 81269 0 98044 0 89657 0 1482 0
0.3094 0.0371 0.3024 0.0435 0.2939 0.0524 0.2768 0.0706 0.2541
1 0.03 92052 94967 69343 16159 76635 02675 28051 33709 26489
0.6513 0.0560 0.6415 0.0633 0.6327 0.0742 0.6137 0.0970 0.5827
2 0.04 21888 67228 22527 04722 03304 0671 58206 18301 27373
1.0008 0.0670 0.9920 0.0753 0.9792 0.0886 0.9588 0.1164 0.9163
3 0.06 27432 60888 08448 97611 69087 81579 54437 40415 90777
0.0701 1.3522 0.0769 1.3433 0.0857 1.3287 0.1015 1.3060 0.1378 1.2520
4 75648 93134 54961 10237 49924 74929 07425 7307 77762 14279
 0.0758 1.7178 0.0834 1.7070 0.0930 1.6916 0.1105 1.6653 0.1670 1.5794
5 55672 04193 59616 24932 78852 72802 77106 78213 10725 71707
0.0814 2.0777 0.0910 2.0650 0.1033 2.0464 0.1218 2.0153 0.2598 1.8028
6 44204 62365 63499 23422 39612 05077 45543 73945 14858 94115
0.0893 2.4253 0.0981 2.4109 0.1111 2.3915 0.1332 2.3580 0.4831 1.8249
7 22805 08704 1759 35879 2684 0095 05414 20544 67589 42231
0.0949 2.7795 0.1050 2.7656 0.1176 2.7455 0.1466 2.7019 0.7165 1.8272
8 11218 50314 80307 68154 31257 7972 72666 72485 06422 28665
0.0994 3.1342 0.1095 3.1189 0.1255 3.0952 0.1625 3.0361 0.9470 1.8339
9 00282 81874 69311 29863 10097 48222 2166 26375 05033 24174
0.1059 3.4793 0.1155 3.4635 0.1335 3.4349 0.1886 3.3559 1.1766 1.8422
10 04758 77747 24113 36739 71982 5512 31475 08632 79075 544

So, through using mesh analysis we first calculated base current and for the same amount of
base current we used the collector current from point 1 in order to calculate the Vce which was
equivalent to the simulation results which means the simulation was carried out properly.

For this table, it must be known, Vbe is the voltage that falls between the base and emitter of a
bipolar junction transistor. Vbe is approximately 0.7V for a silicon transistor. For a
germanium transistor (which is rarer), VBE is approximately 0.3V. On the other hand, Vce is
utilized to determine load current and q point. Ic is the collector current as usual. Using virtual
instruments like multimeter and completing pre-required calculations the values of Ic and Vb
are measured while Vce is known to be within 0 to 20 Volts.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end doesn’t somehow become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .00163 miliamps we get Vce= 6.52 Volts which is almost as equal as the trace in the
simulation in table 2.
Table 02: Vbe and Ic for Vce from 5-10Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=12.00V Vce=5.00V Vce=6.25V Vce=7.50V
Tag: Vce=5.00V Vce=6.25V Vce=7.50V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 0.000367 0.002448 0 0 0 0 0.003298
1 0.016674 0 0.017132 0 0.016674
2 0.032889 0 0.033164 0 0.032889

Here the Vce (Voltage between the collector and emitter junction) is maintained between 5 to
10 Volts to for respective values of Vbe and Ic.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .00163 miliamps we get Vce= 6.52 Volts which is almost as equal as the trace in the
simulation in table 03.

Table 03: Vbe and Ic for Vce from 0-20Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=12.00V Vce=5.00V Vce=6.25V Vce=7.50V
Tag: Vce=5.00V Vce=6.25V Vce=7.50V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 0.000367 0.002448 0 0 0 0 0.003298
1 0.016674 0 0.017132 0 0.016674
2 0.032889 0 0.033164 0 0.032889

Finally, Ic and Vbe is measured when Vce is ranged between 10 & 15 volts.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,
Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .00163 miliamps we get Vce= 11.78 Volts which is almost as equal as the trace in the
simulation in table 4.

Table 04: Vbe and Ic for Vce from 10-15Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Tag: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 0.00339 0 0.000366 0 0 0 -0.00037
1 0.016307 0 0.01704 0 0.017773 0 0.016857
2 0.029041 0 0.029408 0 0.029408 0 0.029499

Experimental Output
 BC547 Ic vs Vce
10
9
8
7
Ib=25.0uA
6 Ib=20.0uA
Ic(mA)

5 Ib=15.0uA
4 Ib=10.0uA
3 Ib=5.0uA
2
1
0
0 2 4 6 8 10 12
Vce

Fig 02: plotting of Ic vs VCE from excel sheet of BC 547

This figure shows values of Ic against values of Vce for different values of Ib of a BC547 transistor.

BD 137 NPN
BD 137 is a bipolar NPN transistor. In this section there will be description of circuit
components and design needed for DC transfer characteristics in Ni Multisim. And Later there
will be simulation of the DC transfer characteristics in the Ni Multisim for 0 to 20 Volts at 5 Volts
interval.

Circuit components
7. BD137 Transistor
8. DC voltage source (VCE)
9. DC voltage Source (V2)
10. Resistor 20 Kohm
11. Resistor 1 Kohm
12. Ground

Circuit Diagram
 Fig 03: Circuit Diagram using BD137

Data for Calculation

Here,

As per the simulation results, in point 0 there was no collector current.

Now by mesh analysis we get,

In second loop, Vce+Ic(R1)-BAT1=0

Using Ic = .2985x10^-3 when trace Ib= 34x10^-6 amps

Vce= BAT1-Ic(R1) = .0402 V

Which is almost of the same value as simulation result for Voltage from collector towards
emitter (Vce).
Table 05: Ic and Vce for Ib from 30-170μAmps

BJT
Ic /
Vce
Typ BJT Ic /
e: Vce
Tra Ib=170. Ib=136. Ib=102. Ib=68.0 Ib=34.0
ce: 0µA 0µA 0µA µA µA
Ib=170. Ib=136. Ib=102. Ib=68.0 Ib=34.0
Tag: 0µA 0µA 0µA µA µA
Col DarkRe
our: Red d Green Lime Blue
Poi
nt Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA)
0.0041 0.0044 0.0054 0.0040 0.0054
0 22555 0 89064 0 05128 0 30943 0 9686 0
0.0139 0.3268 0.0153 0.3266 0.0199 0.3222 0.0252 0.3156 0.0386 0.2985
1 25195 04072 90992 40874 71728 31054 85184 98177 60765 49563
0.0211 0.6808 0.0250 0.6794 0.0301 0.6733 0.0401 0.6601 0.0631 0.6281
2 62629 82633 10347 1308 40758 70302 26562 4111 21438 30198
0.0296 1.0377 0.0335 1.0346 0.0411 1.0253 0.0522 1.0089 0.0849 0.9626
3 82517 38085 30414 34829 34298 25418 1945 93864 25413 10781
0.0340 1.3972 0.0393 1.3906 0.0477 1.3805 0.0626 1.3593 0.1121 1.2825
4 80088 06306 02051 7328 30446 47166 63317 15753 34457 55342
0.0380 1.7601 0.0452 1.7550 0.0541 1.7429 0.0710 1.7179 0.1951 1.5325
5 19598 04418 56853 41122 43429 55565 00218 67272 36011 98615
0.0426 2.1225 0.0500 2.1154 0.0603 2.1001 0.0812 2.0720 0.4267 1.5479
6 00155 12341 20814 89483 73127 37472 6086 4628 33971 50864
0.0469 2.4751 0.0546 2.4646 0.0661 2.4504 0.0939 2.4112 0.6586 1.5489
7 05994 20783 92924 68751 44645 59719 03542 62512 9844 31003
0.0513 2.8296 0.0620 2.8182 0.0746 2.8007 0.1047 2.7563 0.8946 1.5499
8 95118 8998 2203 5757 64712 82204 13738 58624 93911 11141
0.0579 3.1839 0.0661 3.1731 0.0803 3.1525 0.1212 3.0896 1.1287 1.5512
9 91207 31112 44764 52208 44796 73586 95869 95454 65404 17914
0.0605 3.5368 0.0699 3.5244 0.0873 3.4965 0.1507 3.4021 1.3605 1.5541
10 56233 67142 00811 54355 99006 26718 03609 27981 46768 57615

So, using the value of Ic for the same trace of Ib we achieved the value of Vce utilizing mesh
analysis which value was equivalent to that of simulation results. So,the simulation was carried
out properly.
For this table, information needed are, Vbe is the voltage that falls between the base and
emitter of a bipolar junction transistor. Vbe is approximately 0.7V for a silicon transistor. For a
germanium transistor (which is rarer), VBE is approximately 0.3V. On the other hand, Vce is
utilized to determine load current and q point. Ic is the collector current as usual. Using virtual
instruments like multimeter and completing pre-required calculations the values of Ic and Vb
are measured while Vce is known to be within 0 to 20 Volts.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .00425 miliamps we get Vce= 6.5 Volts which is almost as equal as the trace in the
simulation in table 6.

Table 06: Vbe and Ic for Vce from 0-20 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=0.00V Vce=5.00V Vce=10.00V
Tag: Vce=0.00V Vce=5.00V Vce=10.00V
Colour: Red DarkRed Green
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA)
0 0.000183 0 0.003481 0 0.000183 0
1 0.013742 0 0.013559 0 0.016948 0
2 0.029591 0 0.029499 0 0.029225 0

Here the Vce(Voltage between the collector and emitter junction) is maintained between 5 to
10 Volts to for respective values of Vbe and Ic.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,
Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .00425 miliamps we get Vce= 6.5 Volts which is almost as equal as the trace in the
simulation in table 07.

Table 07: Vbe and Ic for Vce from 5-10 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Tag: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 0.00339 0 0.000366 0 0 0 -0.00037
1 0.016307 0 0.01704 0 0.017773 0 0.016857
2 0.029041 0 0.029408 0 0.029408 0 0.029499

Finally, Ic and Vbe is measured when Vce is ranged between 10 & 15 volts.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .0163 miliamps we get Vce= 11.5 Volts which is almost as equal as the trace in the
simulation in table 08.

Table 08: Vbe and Ic for Vce from 10-15 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=10.00V Vce=11.25V Vce=12.50V Vce=10.00V
Tag: Vce=10.00V Vce=11.25V Vce=12.50V Vce=10.00V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 -0.00156 0 -0.00431 0 -0.00284 0 -0.00128
1 0.012735 0 0.014565 0 0.014565 0 0.014201
2 0.026658 0 0.025469 0 0.024092 0 0.027116

Experimental Output

BD137 Ic vs Vce
12
10
Ib=170.0uA
8
Ib=136.0uA
Ic(mA)

6 Ib=102.0uA
4 IB=68.0uA
Ib=34.0uA
2
0
0 2 4 6 8 10 12
Vce

Fig 04: plotting of Ic vs VCE from excel sheet of BD137

This figure shows values of Ic against values of Vce for different values of Ib of a BD137
transistor.

BC 557 PNP
BC 557 is a bipolar PNP transistor. In this section there will be description of circuit components
and design needed for DC transfer characteristics in Ni Multisim. And Later there will be
simulation of the DC transfer characteristics in the Ni Multisim for 0 to 20 Volts at 5 Volts
interval.

Circuit components
13. BC557 Transistor
14. DC voltage source (VCE)
15. DC voltage Source (V2)
16. Resistor 20 Kohm
17. Resistor 1 Kohm
18. Ground

Circuit Diagram

Fig 05: Circuit Diagram or BC557

Data for Calculation

Here,

As per the simulation results, in point 0 there was no collector current.

Now by mesh analysis we get,

In second loop, Vce+Ic(R1)-BAT1=0

Using Ic = .2747x10^-3 amps when trace Ib= 18x10^-6 amps

Vce= BAT1-Ic(R1) = .0503 V

Which is almost of the same value as simulation result for Voltage from collector towards
emitter (Vce).

Table 09: Vc and Ice for Ib from 5-30 μAmps

BJT
Ic /
Vce
Typ BJT Ic /
e: Vce
Tra Ib=30.0 Ib=24.0 Ib=18.0 Ib=12.0 Ib=6.0µ
ce: µA µA µA µA A
Ib=30.0 Ib=24.0 Ib=18.0 Ib=12.0 Ib=6.0µ
Tag: µA µA µA µA A
Col DarkRe
our: Red d Green Lime Blue
Poi
nt Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA)
-
0.0030 0.0026 0.0006 9.16E- 0.0016
0 23148 0 55983 0 40869 0 05 0 5081 0
0.0388 0.2931 0.0416 0.2859 0.0474 0.2747 0.0558 0.2603 0.0743 0.2364
1 42201 60677 85104 75933 54834 05738 84361 32823 89458 88461
0.0570 0.6263 0.0623 0.6188 0.0702 0.6047 0.0804 0.5962 0.1022 0.5636
2 72639 32283 90327 21084 66724 72925 36707 79025 40562 16097
0.0667 0.9853 0.0748 0.9751 0.0819 0.9613 0.0950 0.9448 0.1230 0.8998
3 86766 15323 46268 85931 93103 04367 94681 06278 37338 95549
0.0769 1.3400 0.0831 1.3340 0.0947 1.3189 0.1071 1.2970 0.1433 1.2435
4 54842 44618 8615 04045 2847 76521 87271 92438 73489 23002
0.0812 1.6848 0.0897 1.6750 0.0999 1.6603 0.1177 1.6346 0.1723 1.5499
5 60681 14572 81761 11516 48883 13964 21558 74191 26088 10665
0.0896 2.0455 0.0980 2.0352 0.1097 2.0173 0.1297 1.9853 0.2685 1.7681
6 89255 87778 28183 98586 53609 34938 23549 21522 18448 09083
0.0962 2.3941 0.1073 2.3843 0.1155 2.3673 0.1393 2.3289 0.4934 1.7901
7 84866 14971 70377 1716 22385 29359 42308 48975 30138 56484
0.1023 2.7490 0.1122 2.7375 0.1229 2.7143 0.1554 2.6763 0.7199 1.8050
8 31161 12709 2744 79107 45786 82648 6608 33666 87869 19021
0.1081 3.1039 0.1179 3.0900 0.1310 3.0632 0.1736 3.0039 0.9506 1.8195
9 94351 03294 96216 25187 98747 34568 06873 56079 7215 51706
0.1126 3.4609 0.1223 3.4434 0.1405 3.4210 0.2040 3.3245 1.1831 1.8319
10 85204 22718 04916 47113 34401 75106 21454 51821 85577 64374
So, using the value of Ic for the same trace of Ib we achieved the value of Vce utilizing mesh
analysis which value was equivalent to that of simulation results. So, the simulation was carried
out properly.

For this table, it should be known, Vbe is the voltage that falls between the base and emitter of
a bipolar junction transistor. Vbe is approximately 0.7V for a silicon transistor. For a
germanium transistor (which is rarer), VBE is approximately 0.3V. On the other hand, Vce is
utilized to determine load current and q point. Ic is the collector current as usual. Using virtual
instruments like multimeter and completing pre-required calculations the values of Ic and Vb
are measured while Vce is known to be within 0 to 20 Volts.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .02287 miliamps we get Vce= 4.89 Volts which is almost as equal as the trace in the
simulation in table 10.

Table 10: Vb and Ice for Vce from 0-20 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=5.00V Vce=6.25V Vce=7.50V Vce=8.75V
Tag: Vce=5.00V Vce=6.25V Vce=7.50V Vce=8.75V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 -0.0011 0 -0.00211 0 -0.00156 0 -0.00174
1 0.012185 0.002287 0.012825 0 0.01649 0 0.016032
2 0.024369 0 0.024644 0 0.034262 0 0.030049

Here the Vce (Voltage between the collector and emitter junction) is maintained between 5 to
10 Volts to for respective values of Vbe and Ic.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .02287 miliamps we get Vce= 4.89Volts which is almost as equal as the trace in the
simulation in table 11.
Table 11: Vb and Ice for Vce from 5-10 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=5.00V Vce=6.25V Vce=7.50V Vce=8.75V
Tag: Vce=5.00V Vce=6.25V Vce=7.50V Vce=8.75V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 -0.0011 0 -0.00211 0 -0.00156 0 -0.00174
1 0.012185 0.002287 0.012825 0 0.01649 0 0.016032
2 0.024369 0 0.024644 0 0.034262 0 0.030049

In the end, Ic and Vbe is measured when Vce is ranged between 10 & 15 volts.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .0018 miliamps we get Vce= 0.3 Volts which is almost as equal as the trace in the
simulation in table 12.

Table 12: Vb and Ice for Vce from 10-15 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Tag: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 0.00339 0 0.000366 0 0 0 -0.00037
1 0.016307 0 0.01704 0 0.017773 0 0.016857
2 0.029041 0 0.029408 0 0.029408 0 0.029499

Experimental Output

BC557 Ic vs Vce
10
9
8
7
Ib=30.0uA
6 Ib=24.0uA
Ic(mA)

5 Ib=18.0uA
4 Ib=12.0uA
3 Ib=6.0uA
2
1
0
0 2 4 6 8 10 12
Vce

Figure 06: plotting of Ic vs VCE from excel sheet of BC 557

This figure shows values of Ic against values of Vce for different values of Ib of a BC557 transistor.

BC138 PNP
BD 138 is a bipolar PNP transistor. In this section there will be description of circuit components
and design needed for DC transfer characteristics in Ni Multisim. And Later there will be
simulation of the DC transfer characteristics in the Ni Multisim for 0 to 20 Volts at 5 Volts
interval.

Circuit components
19. BD138 Transistor
20. DC voltage source (VCE)
21. DC voltage Source (V2)
22. Resistor 20 K ohm
23. Resistor 1 K ohm
24. Ground

Circuit Diagram

Figure 07: Circuit Diagram using BD-138

Data for Calculation

Here,

As per the simulation results, in point 0 there was no collector current.

Now by mesh analysis we get,

In second loop, Vce+Ic(R1)-BAT1=0

Using Ic = .2680x10^-3 amps when trace Ib= 29x10^-6 amps

Vce= BAT1-Ic(R1) = .0551 V

Which is almost of the same value as simulation result for Voltage from collector towards
emitter (Vce).

Table 13: Vc and Ice for Ib from 30-150 μAmps

BJT
Ic /
Vce
Typ BJT Ic /
e: Vce
Tra Ib=145. Ib=116. Ib=87.0 Ib=58.0 Ib=29.0
ce: 0µA 0µA µA µA µA
Ib=145. Ib=116. Ib=87.0 Ib=58.0 Ib=29.0
Tag: 0µA 0µA µA µA µA
Col DarkRe
our: Red d Green Lime Blue
Poi
nt Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA) Vce Ic (mA)
0.0065 0.0052 0.0054 0.0086 0.0046
0 95612 0 21367 0 96025 0 10725 0 71097 0
0.0199 0.3106 0.0222 0.3070 0.0259 0.3049 0.0340 0.2931 0.0510 0.2680
1 70894 36342 63527 42271 27544 20495 79552 62376 28252 10616
0.0307 0.6534 0.0358 0.6511 0.0415 0.6444 0.0541 0.6292 0.0775 0.6008
2 827 42621 20961 5422 00092 60797 43906 71805 95711 55827
0.0389 1.0179 0.0450 1.0132 0.0529 1.0008 0.0672 0.9825 0.0969 0.9386
3 35661 7998 74463 43437 52766 27312 43576 3727 25735 04176
0.0433 1.3798 0.0518 1.3714 0.0620 1.3563 0.0781 1.3354 0.1201 1.2747
4 34007 95687 5318 00118 21255 74383 45027 71272 95389 16973
0.0500 1.7231 0.0579 1.7146 0.0692 1.7019 0.0860 1.6725 0.1502 1.5848
5 21172 93288 91028 99507 59644 63782 23331 65103 47574 61994
0.0550 2.0862 0.0645 2.0738 0.0750 2.0583 0.0983 2.0307 0.2445 1.8099
6 60387 55074 88547 43956 30327 28629 91533 25241 16373 15423
0.0610 2.4396 0.0700 2.4271 0.0837 2.4128 0.1083 2.3692 0.4674 1.8342
7 15129 82007 84572 04473 33559 96395 7841 87968 11041 51046
0.0677 2.7944 0.0769 2.7798 0.0901 2.7592 0.1211 2.7140 0.7003 1.8393
8 93846 12851 54842 76709 45111 96656 1187 57922 81279 14103
0.0709 3.1437 0.0822 3.1316 0.0995 3.1076 0.1371 3.0500 0.9325 1.8482
9 07593 54482 68715 71667 84579 6077 44089 09251 29449 95927
0.0764 3.5011 0.0875 3.4898 0.1043 3.4623 0.1618 3.3820 1.1719 1.8474
10 06479 01971 82588 30017 48183 93284 80493 38355 15054 7982
So, using the value of Ic for the same trace of Ib we achieved the value of Vce utilizing mesh
analysis which value was equivalent to that of simulation results. So, the simulation was carried
out properly.
In order to create this table, it should be known, Vbe is the voltage that falls between the base
and emitter of a bipolar junction transistor. Vbe is approximately 0.7V for a silicon transistor.
For a germanium transistor (which is rarer), VBE is approximately 0.3V. On the other hand, Vce
is utilized to determine load current and q point. Ic is the collector current as usual. Using
virtual instruments like multimeter and completing pre-required calculations the values of Ic
and Vb are measured while Vce is known to be within 0 to 20 Volts.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .002448 miliamps we get Vce= 11.5 V which is almost as equal as the trace in the
simulation in table 14.

Table 14: Vb and Ice for Vce from 0-20 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=12.00V Vce=5.00V Vce=6.25V Vce=7.50V
Tag: Vce=5.00V Vce=6.25V Vce=7.50V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 0.000367 0.002448 0 0 0 0 0.003298
1 0.016674 0 0.017132 0 0.016674
2 0.032889 0 0.033164 0 0.032889

Here the Vce(Voltage between the collector and emitter junction) is maintained between 5 to
10 Volts to for respective values of Vbe and Ic.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .0296 miliamps we get Vce= 10.52 Volts which is almost as equal as the trace in the
simulation in table 15.
Table 15: Vb and Ic for Vce from 5-10 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=10.00V Vce=11.25V Vce=12.50V Vce=10.00V
Tag: Vce=10.00V Vce=11.25V Vce=12.50V Vce=10.00V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 -0.00156 0 -0.00431 0 -0.00284 0 -0.00128
1 0.012735 0 0.014565 0 0.014565 0 0.014201
2 0.026658 0 0.025469 0 0.024092 0 0.027116

Here the Vce(Voltage between the collector and emitter junction) is maintained between 10 to
15 Volts to for respective values of Vbe and Ic.

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .0163 miliamps we get Vce= 11.5 Volts which is almost as equal as the trace in the
simulation in table 16.

Table 16: Vb and Ice for Vce from 10-15 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=10.00V Vce=11.25V Vce=12.50V
Tag: Vce=10.00V Vce=11.25V Vce=12.50V

Finally, Vce is started and brought back to 10 volts

As the connection was completed the Vbe was constantly increasing to be as closest as 0.7
Volts. Which in the end somehow doesn’t become exactly 0.7 volts. However,

Applying mesh analysis in the circuit,

In right loop, BAT2+R1xIc =Vce

Using Ic= .0018 miliamps we get Vce= 0.028 Volts which is almost as equal as the trace in the
simulation in table 17.

Table 17: Vb and Ice for Vce from 10-10 Volts

BJT Ic / Vbe
Type: BJT Ic / Vbe
Trace: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Tag: Vce=0.00V Vce=0.00V Vce=1.25V Vce=5.00V
Colour: Red DarkRed Green Lime
Point Vbe Ic (mA) Vbe Ic (mA) Vbe Ic (mA) Vbe
0 0.00339 0 0.000366 0 0 0 -0.00037
1 0.016307 0 0.01704 0 0.017773 0 0.016857
2 0.029041 0 0.029408 0 0.029408 0 0.029499

Experimental Output
 BD138 Ic vs Vce
12

10

8 Ib=145.0uA
Ib=116.0uA
Ic(mA)

6 Ib=87.0uA
Ib=58.0uA
4
Ib=29.0uA
2

0
0 2 4 6 8 10 12
Vce

Fig 08: plotting of Ic vs VCE from excel sheet of BD 138

This figure shows values of Ic against values of Vce for different values of Ib of a BD138
transistor.