BDW42G - NPN, BDW46G,

BDW47G - PNP

Darlington Complementary
Silicon Power Transistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed http://onsemi.com
switching applications.

Features 15 AMP DARLINGTON

• High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. COMPLEMENTARY SILICON
• Collector Emitter Sustaining Voltage @ 30 mAdc: POWER TRANSISTORS
VCEO(sus) = 80 Vdc (min) − BDW46
100 Vdc (min) − BDW42/BDW47 80−100 VOLT, 85 WATT
• Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc MARKING
3.0 Vdc (max) @ IC = 10.0 Adc DIAGRAM
• Monolithic Construction with Built−In Base Emitter Shunt resistors
4
• TO−220AB Compact Package
• These are Pb−Free Packages*
TO−220AB
BDWxx
CASE 221A−09
AYWWG
MAXIMUM RATINGS STYLE 1

Rating Symbol Value Unit 1

2
Collector-Emitter Voltage VCEO Vdc 3
BDW46 80
BDW42, BDW47 100 BDWxx = Device Code
Collector-Base Voltage VCB Vdc x = 42, 46, or 47
BDW46 80 A = Assembly Location
BDW42, BDW47 100 Y = Year
Emitter-Base Voltage VEB 5.0 Vdc WW = Work Week
G = Pb−Free Package
Collector Current IC 15 Adc
Base Current IB 0.5 Adc
Total Device Dissipation PD ORDERING INFORMATION
@ TC = 25°C 85 W
Derate above 25°C 0.68 W/°C Device Package Shipping

Operating and Storage Junction TJ, Tstg −55 to +150 °C BDW42G TO−220AB 50 Units/Rail
Temperature Range (Pb−Free)
THERMAL CHARACTERISTICS BDW46G TO−220AB 50 Units/Rail
Characteristic Symbol Max Unit (Pb−Free)

Thermal Resistance, RqJC 1.47 °C/W BDW47G TO−220AB 50 Units/Rail

Junction−to−Case (Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2011 Publication Order Number:

October, 2011 − Rev. 15 BDW42/D
 BDW42G − NPN, BDW46G, BDW47G − PNP

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) BDW46 80 −
BDW42/BDW47 100 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 40 Vdc, IB = 0) BDW46 − 2.0
(VCE = 50 Vdc, IB = 0) BDW42/BDW47 − 2.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICBO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 80 Vdc, IE = 0) BDW46 − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 100 Vdc, IE = 0) BDW42/BDW47 − 1.0
Emitter Cutoff Current IEBO − 2.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain hFE

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, VCE = 4.0 Vdc) 1000 −
(IC = 10 Adc, VCE = 4.0 Vdc) 250 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 5.0 Adc, IB = 10 mAdc) − 2.0
(IC = 10 Adc, IB = 50 mAdc) − 3.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VBE(on) − 3.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector IS/b Adc
Current with Base Forward Biased

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BDW42 VCE = 28.4 Vdc 3.0 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE = 40 Vdc 1.2 −
BDW46/BDW47 VCE = 22.5 Vdc 3.8 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE = 36 Vdc 1.2 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Magnitude of common emitter small signal short circuit current transfer ratio fT 4.0 − MHz
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance Cob pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 − 200
BDW46/BDW47 − 300
Small−Signal Current Gain
ÎÎÎ hfe 300 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2. Pulse Test non repetitive: Pulse Width = 250 ms.

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 BDW42G − NPN, BDW46G, BDW47G − PNP

90

80

PD, POWER DISSIPATION (WATTS)

70

60

50
40
30

20

10

0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve

5.0
VCC ts
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V 3.0
D1 MUST BE FAST RECOVERY TYPES, e.g.: 2.0
1N5825 USED ABOVE IB [ 100 mA
RC
MSD6100 USED BELOW IB [ 100 mA SCOPE tf
1.0
TUT
t, TIME (s)
μ

RB 0.7
V2
0.5
APPROX
+ 8.0 V 51 D1 0.3
[ 8.0 k [ 150 tr
0 0.2 VCC = 30 V
V1 + 4.0 V IC/IB = 250
0.1 IB1 = IB2
APPROX 25 ms for td and tr, D1 id disconnected
- 12 V 0.07 TJ = 25°C td @ VBE(off) = 0 V
and V2 = 0 0.05
tr, tf v 10 ns 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
For NPN test circuit reverse all polarities
DUTY CYCLE = 1.0%
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit Figure 3. Switching Times

1.0
THERMAL RESISTANCE (NORMALIZED)

0.7 D = 0.5
0.5
r(t) EFFECTIVE TRANSIENT

0.3 0.2
0.2
0.1
P(pk)
0.1 0.05 RqJC(t) = r(t) RqJC
0.07 0.02 RqJC = 1.92°C/W
0.05 D CURVES APPLY FOR POWER
t1 PULSE TRAIN SHOWN
0.03 SINGLE PULSE t2
READ TIME AT t1
0.02 0.01
DUTY CYCLE, D = t1/t2 TJ(pk) - TC = P(pk) RqJC(t)

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

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 BDW42G − NPN, BDW46G, BDW47G − PNP

ACTIVE−REGION SAFE OPERATING AREA

50 50
0.1 ms 0.1 ms
20 20
IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

10 TJ = 25°C 10 TJ = 25°C
1.0 ms 1.0 ms
0.5 ms 0.5 ms
5.0 5.0
SECOND BREAKDOWN LIMIT dc SECOND BREAKDOWN LIMIT
2.0 BONDING WIRE LIMIT 2.0 BONDING WIRE LIMIT
dc
1.0 THERMAL LIMITED 1.0 THERMAL LIMITED
@ TC = 25°C (SINGLE PULSE) @ TC = 25°C (SINGLE PULSE)
0.5 0.5

0.2 0.2
0.1 0.1 BDW46
BDW42 BDW47
0.05 0.05
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. BDW42 Figure 6. BDW46 and BDW47

There are two limitations on the power handling ability of a Second breakdown pulse limits are valid for duty cycles to
transistor: average junction temperature and second 10% provided TJ(pk) v 200°C. TJ(pk) may be calculated from
breakdown. Safe operating area curves indicate IC − VCE limits the data in Figure 4. At high case temperatures, thermal
of the transistor that must be observed for reliable operation; limitations will reduce the power that can be handled to values
i.e., the transistor must not be subjected to greater dissipation less than the limitations imposed by second breakdown.
than the curves indicate. The data of Figure 5 and 6 is based on *Linear extrapolation
TJ(pk) = 200°C; TC is variable depending on conditions.

10,000 300
TJ = + 25°C
hFE, SMALL-SIGNAL CURRENT GAIN

5000
3000 200
2000
C, CAPACITANCE (pF)

1000

500
100 Cob
300 TJ = 25°C
200
VCE = 3.0 V
70 Cib
100 IC = 3.0 A
50 50
30 BDW46, 47 (PNP) BDW46, 47 (PNP)
20 BDW42 (NPN) BDW42 (NPN)
10 30
1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Small−Signal Current Gain Figure 8. Capacitance

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 BDW42G − NPN, BDW46G, BDW47G − PNP

BDW42 (NPN) BDW46, 47 (PNP)

20,000 20,000
VCE = 3.0 V VCE = 3.0 V
10,000 10,000
hFE, DC CURRENT GAIN

7000

hFE, DC CURRENT GAIN

5000 TJ = 150°C 5000 TJ = 150°C
3000 3000
2000 2000 25°C
25°C

1000 1000
-55°C 700
500 -55°C
500
300 300
200 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 9. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

3.0
TJ = 25°C
TJ = 25°C
2.6
2.6
IC = 2.0 A 4.0 A 6.0 A
IC = 2.0 A 4.0 A 6.0 A
2.2
2.2

1.8
1.8

1.4
1.4

1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0
0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region

3.0 3.0
TJ = 25°C TJ = 25°C

2.5 2.5
V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0 2.0

VBE(sat) @ IC/IB = 250

1.5 1.5 VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250

1.0 1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 11. “On” Voltages

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 BDW42G − NPN, BDW46G, BDW47G − PNP

BDW42 (NPN) BDW46, 47 (PNP)

+5.0 +5.0

θV, TEMPERATURE COEFFICIENTS (mV/°C)

θV, TEMPERATURE COEFFICIENT (mV/ °C)

+4.0 +4.0
*IC/IB v 250 *IC/IB v 250
+3.0 +3.0
+ 25°C to 150°C
+2.0 25°C to 150°C +2.0
+1.0 +1.0
-55°C to 25°C
0 0
-1.0 *qVC for VCE(sat) -1.0 *qVC for VCE(sat)
-2.0 -2.0
25°C to 150°C qVB for VBE -55°C to + 25°C
-3.0 -3.0
qVB for VBE + 25°C to 150°C -55°C to +25°C
-4.0 -55°C to 25°C -4.0
-5.0 -5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

Figure 12. Temperature Coefficients

105 105
REVERSE FORWARD REVERSE FORWARD
104 104
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

μ

VCE = 30 V VCE = 30 V
103 103

102 102
TJ = 150°C TJ = 150°C
101 101
100°C
100 100 100°C
25°C
25°C
10-1 10-1
+0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.6 -0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region

NPN COLLECTOR PNP COLLECTOR

BDW42 BDW46
BDW47

BASE BASE

[ 8.0 k [ 60 [ 8.0 k [ 60

EMITTER EMITTER

Figure 14. Darlington Schematic

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 BDW42G − NPN, BDW46G, BDW47G − PNP

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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7