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Assignment-II (2109)
Opto-electronics (ECE-301)
B. Tech. III Year ECE (5th Sem. EC1, EC2, EC3, EC4, EC5, EC6)
(c) The mean output photocurrent when the received optical power is 10-7 W.
(33%; 24.8 x 10-20 J; 21.3 nW)
Calculate:
Q.3 (a) The time taken for electrons to diffuse through a layer of p
type silicon is 28.8 ns. If the minority carrier diffusion coefficient is
3.4 x 10-3 m2s-1, Determine the thickness of the silicon layer.
(14 µm)
wavelength is 0.6 AW-1 and 1010 photons of this wavelength are incident upon
it per second. (50% ; 15.9 nA)
Q.6 Given that the following measurements were taken for an APD,
calculate the multiplication factor for the device,
Q.7 When 1011 photon per second each with energy of 1.28 x 10-19 J are
incident on an ideal photodiode, calculate...
(2.01 A)
b) The RMS quantum noise current in post detection band width of 20MHz.
(3.59 nA)
(55.0 dB)
Discuss the expression for the SNR in an APD receiver given by:
with regard to the various sources of noise present in the receiver. How
may this expression be modified to give the optimum avalanche multiplication
factor?
Q.13 A silicon RAPD has a quantum efficiency of 95% at a wavelength of
0.9µm, has an excess avalanche noise factor of M0.3 and a capacitance of
2 pF. It may be assumed that the post detection bandwidth (without
equalization) is 25 MHz, and that the dark current in the device is
negligible at the operating temperature of 290 K. determine the minimum
incident optical power which can yield an SNR of 23
dB.
(-50.3 dBm)
( 9.3 mA)