EEC 140B Final Exam, June 10, 2015

Time: 6:10-8:20PM

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-34
Planck constant, h = 6.63x10 J.s At λ=355nm,
8 6
Speed of light, c = 2.99x10 m/s Absorption coefficient of Si =50x10 /m
-19 6
Electron charge, q = 1.61x10 C Absorption coefficient of Ge= 100x10 /m
-14 -1 2
ε0 = 8.854x10 F cm Mobility of GaAs at 77K =200,000cm /Vs
2
εGaAs =12.4 Mobility of Si at 77K =10,000cm /Vs
εSi =11.7
7 -1
Vh of Ge =0.4 x 10 cm.s
7 -1
Vh of In0.53Ga0.47As =0.6 x10 cm.s
-23 -1
Boltzmann constant =1.38x10 J.K
19 -3
NC (Si) =2.8x10 cm
10 -3
Ni (Si) =1.45x10 cm
17 -3
NC (GaAs) =4.7x10 cm
ni (Si @ Temperature T in Kelvin)
10 3/2 -3
=1.5x10 (T/300) cm
-31
e mass= 9.10938291 × 10 kilograms
T=300K unless specified otherwise

For grading purpose only:

Q1
Q2
Q3
Q4
Q5
Q6
NOTE:
Please write on both sides of each page.
Box your answers and clearly show different parts of each
problem.
2 points for clean exam paper

Q1. 15pts.
An n+ polysilicon gate n-channel MOS transistor is made on a p-type Si substrate with Na=5x1015cm-3. The SiO2
thickness is 10nm in the gate region. The fixed charge in the oxide is non-uniformly distributed and can be
expressed by the following expression.
Poly-Si
2 x =0
QF(x)=QFo * x Q(x)=Qo*x2 Oxide
x =10nm

where x the distance from the polysilicon-oxide interface to the oxide- S D

channel interface on the p-substrate and QFo = q * 8*1028 C/cm5
Effective interface traps, QIT and mobile ions QM are zero, and φ MS= -0.95V. P-Si

Find WT and VT (5+10 pts).

EEC 140B Final Exam, June 10, 2015

EEC 140B Final Exam, June 10, 2015 2

Q2. 10pts. A uniformly doped silicon PNP BJT is to be designed with the following parameters
NPN BJT parameters
NE=1019 cm-3
NC=1x1016 cm-3
Metallurgical base width=0.75µm
Determine the minimum base doping, NB so that punch-through voltage is no less than Vpt=25 V.

Q3. 15pts.
(a) Three quantum (3D) wells or 3D quantum dots of GaAs, Si and Ge are separately confined by infinitely high
barriers. They all contribute to the emission of 3.5eV photons when electrons and holes are recombined in the
quantum wells. Find the dimension of each quantum well. Consider the 3D quantum wells /dots as small cubes with
equal dimensions on each side. Consider e and h masses are same and equal to e mass. 9 pts.
(b) For Si and Ge separately, how many such quantum dots will need to be stacked to absorb >50% of incoming
laser photons that have 3.5eV of photon energy? 6pts

Q4. 15pts. Three NPN BJTs have identical parameters except for the base doping concentrations and neutral base
widths. These parameters are as follows:
Device Base Doping Neutral Base Width
A NB=NB0 WB=xB0
B NB=2NB0 WB=xB0
C NB=NB0 WB=xB0/2
(The data above says, the base doping concentration for device B is twice that of A and C, and the neutral base
width for the C device is half that of A and B)
(a) Determine the ratio of Υ (gamma, emitter injection efficiency) of (i) device B to device C and (ii) device C to
device A. 6pts
(b) Determine the ratio of αT (base transpose factor) of (i) device B to device C and (ii) device C to device A. 6pts
(c) Which device has the largest β DC (common-emitter current gain)? 3pts

Q5. 21 pts
An n+ poly-Si gate n-channel MOS transistor is made on a p-type Si substrate with NA=5x1015cm-3. The SiO2
thickness is 10nm in the gate region. The interface fixed trapped charge in the oxide is 4*1010 electron charges/cm2
φMS= -0.95V, µn=650 cm2/V.s
(a) Find the maximum width of the depletion region.
(b) Calculate the flatband voltage
(c) Find the threshold voltage at room temperature.
(d) Is the device in depletion or enhancement mode?
(e) Draw the C-V curve for high and low frequencies (show value of all C and
corresponding voltages.
(f) Find IDSat for a gate bias = 3V for a device with Z=3L.
(g) Find threshold voltage at T=450K.

Q6. 24pts
a. What are the attractive features of multi-junction solar cells?
b. What are the characteristics of laser light? Can sunlight be used for optical fiber communication?
c. Explain why MOS capacitors have different C values for high and low frequency operations.
d. Write down the names of 3 pairs of semiconductors that can be epitaxially grown on each other.
e. What is ‘Field Effect”? Draw the cross-section of a JEFT device integrated with two pn diodes.
f. Draw and describe the cross-section of a MOSFET with short channel showing the charge sharing phenomenon
(max three sentences).
g. Draw the cross-sectional diagram of a PNP BJT and show the minority carrier distribution and electric field in E, B
and C in forward-active and mode.
h. How does radiation impact MOSFET characteristics?