NTMFS4921N

Power MOSFET
30 V, 58.5 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses http://onsemi.com
• Thermally Enhanced SO−8 Package
• These are Pb−Free Device
V(BR)DSS RDS(ON) MAX ID MAX
Applications
6.95 mW @ 10 V
• CPU Power Delivery 30 V 58.5 A
• DC−DC Converters 10.8 mW @ 4.5 V

• High Side Switching

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) D (5,6)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain TA = 25°C ID 13.8 A G (4)
Current RqJA
(Note 1) TA = 85°C 10
S (1,2,3)
Power Dissipation TA = 25°C PD 2.14 W
RqJA (Note 1) N−CHANNEL MOSFET
Continuous Drain TA = 25°C ID 22.4 A
Current RqJA v
10 sec TA = 85°C 16.1 MARKING
Power Dissipation TA = 25°C PD 5.61 W DIAGRAM
RqJA, t v 10 sec Steady D
Continuous Drain State TA = 25°C ID 8.8 A S D
1 4921N
Current RqJA S
(Note 2) TA = 85°C 6.4 AYWWG
SO−8 FLAT LEAD S
Power Dissipation TA = 25°C PD 0.87 W CASE 488AA G G D
RqJA (Note 2) STYLE 1 D
Continuous Drain TC = 25°C ID 58.5 A
Current RqJC A = Assembly Location
(Note 1) TC = 85°C 42.3 Y = Year
Power Dissipation TC = 25°C PD 38.5 W WW = Work Week
RqJC (Note 1) G = Pb−Free Package
(Note: Microdot may be in either location)
Pulsed Drain tp=10ms TA = 25°C IDM 117 A
Current
Current limited by package TA = 25°C IDmaxpkg 100 A ORDERING INFORMATION
Operating Junction and Storage TJ, −55 to °C
Temperature TSTG +150 Device Package Shipping†
Source Current (Body Diode) IS 38.5 A NTMFS4921NT1G SO−8FL 1500 /
Drain to Source dV/dt dV/dt 6 V/ns (Pb−Free) Tape & Reel
Single Pulse Drain−to−Source Avalanche EAS 86 mJ NTMFS4921NT3G SO−8FL 5000 /
Energy (VDD = 50 V, VGS = 10 V, (Pb−Free) Tape & Reel
IL = 24 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes TL 260 °C †For information on tape and reel specifications,
(1/8” from case for 10 s) including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Stresses exceeding Maximum Ratings may damage the device. Maximum Brochure, BRD8011/D.
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the *For additional information on our Pb−Free strategy
Recommended Operating Conditions may affect device reliability. and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:

September, 2010 − Rev. 3 NTMFS4921N/D
 NTMFS4921N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 3.25
Junction−to−Ambient – Steady State (Note 1) RqJA 58.3
°C/W
Junction−to−Ambient – Steady State (Note 2) RqJA 144.1
Junction−to−Ambient − t v 10 sec RqJA 22.3
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain−to−Source Breakdown Voltage V(BR)DSSt VGS = 0 V, ID(aval) = 13 A, 34
V
(transient) Tcase = 25°C, ttransient = 100 ns

Drain−to−Source Breakdown Voltage V(BR)DSS/ 25

mV/°C
Temperature Coefficient TJ
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1
VDS = 24 V mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.45 1.8 2.5 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V to ID = 30 A 5.3 6.95
11.5 V
ID = 15 A 5.2
mW
VGS = 4.5 V ID = 30 A 8.6 10.8
ID = 15 A 8.4
Forward Transconductance gFS VDS = 1.5 V, ID = 30 A 54 S
CHARGES AND CAPACITANCES
Input Capacitance CISS 1400
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 12 V 282 pF
Reverse Transfer Capacitance CRSS 136
Total Gate Charge QG(TOT) 10.7 16
Threshold Gate Charge QG(TH) 1.4
VGS = 4.5 V, VDS = 15 V; ID = 30 A nC
Gate−to−Source Charge QGS 4.1
Gate−to−Drain Charge QGD 3.8
Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V, 25
nC
ID = 30 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time td(ON) 13.3
Rise Time tr VGS = 4.5 V, VDS = 15 V, ID = 15 A, 38
ns
Turn−Off Delay Time td(OFF) RG = 3.0 W 16.6
Fall Time tf 3.8
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4921N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON) 8.2
Rise Time tr VGS = 11.5 V, VDS = 15 V, 20
ns
Turn−Off Delay Time td(OFF) ID = 15 A, RG = 3.0 W 23
Fall Time tf 3.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.85 1.0
V
IS = 30 A TJ = 125°C 0.74
Reverse Recovery Time tRR 11
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 7.5 ns
Discharge Time tb IS = 30 A 3.5
Reverse Recovery Charge QRR 2.0 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 1.3 nH
Drain Inductance LD 0.005
TA = 25°C
Gate Inductance LG 1.84
Gate Resistance RG 0.5 1.1 2.0 W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.

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 NTMFS4921N

90 100
90 VDS ≥ 10 V
80 VGS = 4.5 V 4.0 V
5.0 V
70 80
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

10 V 3.8 V
70
60
3.6 V 60
50
3.4 V 50
40 TJ = 25°C
40
30 3.2 V
30
3.0 V TJ = 125°C
20 20
10 2.8 V 10 TJ = 25°C TJ = −55°C
2.6 V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.04 0.0195
ID = 30 A TJ = 25°C
TJ = 25°C 0.017
0.03
0.0145
VGS = 4.5 V
0.012
0.02
0.0095

0.007
0.01 VGS = 11.5 V

0.0045

0 0.002
2 4 6 8 10 30 40 50 60 70 80 90 100
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and
Voltage Gate Voltage

1.8 10000
ID = 30 A VGS = 0 V
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

1.6 VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)

1.4 1000

1.2 TJ = 125°C

1 100

0.8

0.6 10
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature vs. Voltage

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 NTMFS4921N

2000 12

VGS, GATE−TO−SOURCE VOLTAGE (V)

1800 TJ = 25°C QT
10
1600 Ciss
C, CAPACITANCE (pF)

1400
8
1200
1000 6
800 VGS
4 Qgs Qgd
600
Coss
400 ID = 30 A
2
200 Crss TJ = 25°C
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20 24

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

1000 30
VDD = 15 V VGS = 0 V
ID = 30 A 25 TJ = 25°C
VGS = 11.5 V IS, SOURCE CURRENT (A)
100 td(off) 20
tf
t, TIME (ns)

tr 15

10 td(on) 10

1 0
1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current
vs. Gate Resistance
1000 100
SOURCE AVALANCHE ENERGY (mJ)

VGS = 20 V 90 ID = 24 A
EAS, SINGLE PULSE DRAIN−TO−

Single Pulse
TC = 25°C 80
ID, DRAIN CURRENT (A)

100 10 ms
70
60
100 ms
10 50
1 ms
40
10 ms
30
1 dc
RDS(on) Limit 20
Thermal Limit 10
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE(°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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 NTMFS4921N

90 100
80 VDS = 1.5 V 100°C 25°C
70
125°C
60 10
50
gFS (S)

Id (A)
40

30 1
20

10
0 0.1
0 10 20 30 40 50 60 70 80 90 0.1 1 10 100 1000 10000
DRAIN CURRENT (A) PULSE WIDTH (ms)
Figure 13. gFS vs. Drain Current Figure 14. Avalanche Characteristics

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 NTMFS4921N

PACKAGE DIMENSIONS

DFN6 5x6, 1.27P (SO8 FL)

CASE 488AA−01
ISSUE C
2X NOTES:
1. DIMENSIONING AND TOLERANCING PER
0.20 C ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
2 B BURRS.
2X
D1 MILLIMETERS
6 5 0.20 C DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.00 −−− 0.05
4X b 0.33 0.41 0.51
E1 q c 0.23 0.28 0.33
E D 5.15 BSC
2 D1 4.50 4.90 5.10
c D2 3.50 −−− 4.22
A1 E 6.15 BSC
E1 5.50 5.80 6.10
1 2 3 4 E2 3.45 −−− 4.30
e 1.27 BSC
TOP VIEW G 0.51 0.61 0.71
3X C K 0.51 −−− −−−
L 0.51 0.61 0.71
e SEATING
L1 0.05 0.17 0.20
0.10 C PLANE
M 3.00 3.40 3.80
A DETAIL A q 0_ −−− 12 _

0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X 4X
1.270 0.750
8X b 4X
1.000
0.10 C A B STYLE 1:
PIN 1. SOURCE
0.05 c L e/2 2. SOURCE
3. SOURCE
1 4 4. GATE 0.965
5. DRAIN
K 6. DRAIN
1.330 2X
0.905
2X
E2 0.495 4.530
M 3.200
L1
0.475
6 5
G D2 2X
1.530
BOTTOM VIEW
4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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