Documente Academic
Documente Profesional
Documente Cultură
.. POWER AMPLIFIER
DESCRIPTION HEPTAWATT
(Plastic Package)
Designed for monitors and high performance TVs,
the TDA8178FS vertical deflection booster is able ORDER CODE : TDA8178FS
to work with a flyback voltage more than the double
of VS.
The TDA8178FS operates with supplies up to 42V,
flyback output up to 92V and provides up to 2App
output current to drive to yoke.
The TDA8178FS is offered in HEPTAWATT pack-
age.
PIN CONNECTIONS
7 Reference Voltage
6 Output Stage Supply
5 Output
4 GND
3 Flyback Supply Voltage
2 Supply Voltage
1 Inverting Input
BLOCK DIAGRAM
+ VS
+ V FLYBAC K
2 6 3
1
POWER
AMPLIFIER 5
7
YOKE
REFERENCE THERMAL
VOLTAGE PROTECTION
8178F-02.EPS
APPLICATION CIRCUIT
+ VS
+ VF
2 6 3
IN 1
TDA8178FS 5
OUT
7
YOKE
4
8178F-03.EPS
Note : For values see ”Easy Design of Vertical Deflection Stages” (software available from our sales offices)
2/6
TDA8178FS
8178F-01.TBL
o
Tstg Storage Temperature - 40, + 150 C
o
Tj Junction Temperature 0, +150 C
THERMAL DATA
8178F-02.TBL
Symbol Parameter Value Unit
o
Rth (j-c) Junction-case Thermal Resistance Max. 3 C/W
ELECTRICAL CHARACTERISTICS
(VS = 42V, TA = 25oC, unless otherwise specified)(refer to the test circuits - see Figure 1 next page)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VS Operating Supply Voltage Range 10 42 V
I2 Pin 2 Quiescent Current I3 = 0 I5 = 0 10 20 mA
I6 Pin 6 Quiescent Current I3 = 0 I5 = 0 20 40 mA
I1 Amplifier Bias Current V1 = 1V - 0.2 -1 µA
V5 Quiescent Output Voltage V
VS = 42V Ra = 3.9kΩ 23.4 24.2 25
VS = 35V Ra = 5.6kΩ 17 17.8 18.5
V5L Output Saturation Voltage to GND I5 = 1A 1.2 1.5 V
V5H Output Saturation Voltage to Supply - I5 = 1A 2.2 2.6 V
VD5 - 6 Diode Forward Voltage between Pins 5-6 ID = 1A 1.5 3 V
VD3 - 6 Diode Forward Voltage between Pins 3-6 ID = 1A 1.5 3 V
V7 Internal Reference 2.1 2.2 2.3 V
∆V7/∆VS Reference Voltage Drift versus VS VS = 24 to 42V 2 4 mV/V
KT Reference Voltage Drift versus Tj Tj = 0 to 125oC 100 150 ppm/oC
6
∆V7 ⋅ 10
KT =
∆Tj ⋅ V7
R1 Input Resistance 200
8178F-03.TBL
kΩ
o
Tj Junction Temperature for Thermal 140 C
Shutdown
3/6
TDA8178FS
+ VS
+ VS
I2 I6
V5H
2 6 2 6
10k Ω 1 TDA8178FS 5
TDA8178FS
S1 a
1
b
7 4 4 - I5
I1
V7 1V
1V
8178F-05.EPS
8178F-04.EPS
+ VS
+ VS
I5
2 6
2 6
1 TDA8178FS 5
1 TDA8178FS
5
4
V5
4 39k Ω
V 5L
3V
Re
8178F-07.EPS
8178F-06.EPS
4/6
TDA8178FS
Pulse Operation*
I C max. pulsed
2
1.2
1
I C max. continued
1ms
10ms
DC
-1 Operation
10
8178F-08.EPS
-2
10
2
1 10 10
5/6
TDA8178FS
E
L1
M1
A
M
D
C
D1
L2
L5 L3
G1
G2
G
H3
Dia.
PM-HEPTV.EPS
F
F1
L7
H2
L6
M1 5.08 0.200
Dia. 3.65 3.85 0.144 0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
6/6