Rev 6: May 2005

AO4914
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description Features
The AO4914 uses advanced trench technology to provide Q1 Q2
excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30V
MOSFETs make a compact and efficient switch and ID = 8.5A ID = 8.5A
synchronous rectifier combination for use in DC-DC
RDS(ON) < 18mΩ <18mΩ (VGS = 10V)
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further RDS(ON) < 28mΩ <28mΩ (VGS = 4.5V)
AO4914 is Pb-free (meets ROHS & Sony 259
specifications). AO4914L is a Green Product ordering SCHOTTKY
option. AO4914 and AO4914L are electrically identical. VDS (V) = 30V, IF = 3A, VF<0.5V@1A

D2 D1
Q1 Q2
S2/A 1 8 D2/K
G2 2 7 D2/K K
S1 3 6 D1
G1 4 5 D1
A
SOIC-8 G2 G1
S2 S1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 8.5 8.5
A
Current TA=70°C ID 6.6 6.6 A
Pulsed Drain Current B IDM 30 30
TA=25°C 2 2
PD W
Power Dissipation TA=70°C 1.28 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Parameter Symbol Maximum Schottky Units

Reverse Voltage VDS 30 V
Continuous Forward TA=25°C 3
A
Current TA=70°C IF 2.2 A
B
Pulsed Diode Forward Current IFM 20
TA=25°C 2
A
PD W
Power Dissipation TA=70°C 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Alpha & Omega Semiconductor, Ltd.

AO4912, AO4912L
Parameter: Thermal Characteristics MOSFET Q1 Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 48 62.5
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40

Parameter: Thermal Characteristics MOSFET Q2 Symbol Typ Max Units

A
Maximum Junction-to-Ambient t ≤ 10s 48 62.5
RθJA
Maximum Junction-to-Ambient A Steady-State 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40

Thermal Characteristics Schottky

Maximum Junction-to-Ambient A t ≤ 10s 47.5 62.5
A RθJA
Maximum Junction-to-Ambient Steady-State 71 110 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL 32 40

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4914, AO4914L

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VR=30V 0.007 0.05
Zero Gate Voltage Drain Current.
IDSS VR=30V, TJ=125°C 3.2 10 mA
(Set by Schottky leakage)
VR=30V, TJ=150°C 12 20
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.8 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=8.5A 15.5 18
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 22.3 27
VGS=4.5V, ID=6A 23 28 mΩ
gFS Forward Transconductance VDS=5V, ID=8.5A 23 S
VSD Diode + Schottky Forward Voltage IS=1A,VGS=0V 0.45 0.5 V
IS Maximum Body-Diode + Schottky Continuous Current 3.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 971 1165 pF
Coss Output Capacitance (FET + Schottky) VGS=0V, VDS=15V, f=1MHz 190 pF
Crss Reverse Transfer Capacitance 110 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 0.85 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 19.2 23 nC
Qg(4.5V) Total Gate Charge 9.36 11.2 nC
VGS=10V, VDS=15V, ID=8.5A
Qgs Gate Source Charge 2.6 nC
Qgd Gate Drain Charge 4.2 nC
tD(on) Turn-On DelayTime 5.2 7.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω, 4.4 6.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17.3 26 ns
tf Turn-Off Fall Time 3.3 5 ns
trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 18.8 23 ns
Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.2 11 nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given
application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single
pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and
recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4914, AO4914L

Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20
30
4V

25 10V 16
VDS=5V
4.5V
20 3.5V
12

ID(A)
ID (A)

15 125°C
8
10
VGS=3V 25°C
4
5

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

28 1.6
VGS=10V
26
VGS=4.5V ID=8.5A
Normalized On-Resistance

24 1.4
RDS(ON) (mΩ)

VGS=4.5V
22
1.2
20

18 VGS=10V
1
16

14
0 5 10 15 20 0.8
0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature
40
50 1.0E+01

1.0E+00 125°
40
ID=8.5A 1.0E-01
RDS(ON) (mΩ)

25°C
IS (A)

30 1.0E-02
125°C
1.0E-03
20
1.0E-04 FET+SCHOTTKY
25°C
1.0E-05
10
0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note F)

Alpha & Omega Semiconductor, Ltd.

AO4914, AO4914L

Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=15V
ID=8.5A 1250
8
Ciss

Capacitance (pF)
1000
VGS (Volts)

6
750
4
500
Coss FET+SCHOTTKY
2
250

Crss
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 50
RDS(ON)
TJ(Max)=150°C
limited
40 TA=25°C
10µs
1ms 100µs
10.0
Power (W)

30
ID (Amps)

10ms
0.1s
20
1.0 1s
TJ(Max)=150°C
TA=25°C 10s 10
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)
40
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4914, AO4914L

Q2 Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 0.003 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.8 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, I D=8.5A 15.5 18
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 22.3 27
VGS=4.5V, I D=6A 23 28 mΩ
gFS Forward Transconductance VDS=5V, ID=8.5A 23 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1040 1250 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 180 pF
Crss Reverse Transfer Capacitance 110 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 0.85 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 19.2 23 nC
Qg(4.5V) Total Gate Charge 9.36 11.2 nC
VGS=10V, VDS=15V, I D=8.5A
Qgs Gate Source Charge 2.6 nC
Qgd Gate Drain Charge 4.2 nC
tD(on) Turn-On DelayTime 5.2 7.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω, 4.4 6.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17.3 26 ns
tf Turn-Off Fall Time 3.3 5 ns
trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 16.7 21 ns
Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.7 10 nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4914, AO4914L

Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20
30
4V

25 10V 16
VDS=5V
4.5V
20 3.5V
12

ID(A)
ID (A)

15 125°C
8
10
VGS=3V 25°C
4
5

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

28 1.6
VGS=10V
26
VGS=4.5V ID=8.5A
Normalized On-Resistance

24 1.4
RDS(ON) (mΩ)

VGS=4.5V
22
1.2
20

18 VGS=10V
1
16

14
0 5 10 15 20 0.8
0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature
40
50 1.0E+01

1.0E+00
40
ID=8.5A 1.0E-01
RDS(ON) (mΩ)

125°C
IS (A)

30 1.0E-02
125°C 25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4914, AO4914L

Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=15V
ID=8.5A 1250
8
Ciss

Capacitance (pF)
1000
VGS (Volts)

6
750
4
500
Coss
2
250

Crss
0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 50
RDS(ON)
TJ(Max)=150°C
limited
40 TA=25°C
10µs
1ms 100µs
10.0
Power (W)

30
ID (Amps)

10ms
0.1s
20
1.0 1s
TJ(Max)=150°C
TA=25°C 10s 10
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)
40
10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.