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SEMITOP® 2
( , 744 (; ('0 < -4 (;
(0+ = >44 (
%1 , 3-. / 34 ?
Inverse Diode
IGBT Module &" %1 , 3.4 / % , -. / @7 5
% , 64 / -A 5
&"89 &"89, - &" 5
SK60GAL125 &"+9 , 34 ;
*
%1 , -. / 334 5
SK60GAR125 Freewheeling Diode
&" %1 , 3.4 / % , -. / .B 5
Target Data % , 64 / 76 5
&"89 5
&"+9 , 34 ;
*
%1 , 3.4 / ..4 5
Features
Module
&89+ 5
%*1 C@4 DDD E3.4 /
% C@4 DDD E3-. /
( 5) 3 D -.44 (
! " #$% &'%
% , -. /)
(
) *
Characteristics
Symbol Conditions min. typ. max. Units
Typical Applications*
IGBT
+
('0 ('0 , (0) & , - 5 @). .). >). (
&*
&0+ ('0 , 4 () (0 , (0+ %1 , -. / 4)44> 5
+
!$+ &'0+ (0 , 4 () ('0 , -4 ( %1 , -. / 744 5
(04 %1 , -. / 3)@ 3)A (
%1 , 3-. / 3)B -)- (
0 ('0 , 3. ( %1 , -./ 7> F
%1 , 3-./ @7 F
(0 & , .4 5) ('0 , 3. ( %1 , -./
*D 7)- 7)B (
%1 , 3-./
*D 7)6. (
7)7 "
(0 , -.) ('0 , 4 ( , 3 9G 4). "
4)-- "
8' , 77 F ( , >44(
0 &, @.5 6)7> H
8' , 77 F %1 , 3-. /
('0,:3.(
0 7)7- H
81C
&'% 4)> IJK
GAL GAR
GAL GAR
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG
% 36 '5O % 36 '58