“Micro-wave Tubes”.

1. The production of power at higher frequencies is much simpler than production

of power at low frequencies.
a) True
b) False
View Answer
Answer: b
Explanation: As frequency increases to the millimeter and sub millimeter ranges, it
becomes increasingly more difficult to produce even moderate power with solid
state devices, so microwave tubes become more useful at these higher frequencies.
2. Microwave tubes are power sources themselves at higher frequencies and can be
used independently without any other devices.
a) True
b) False
View Answer
Answer: b
Explanation: Microwave tubes are not actually sources by themselves, but are high
power amplifiers. These tubes are in conjunction with low power sources and this
combination is referred to as microwave power module.
3. Microwave tubes are grouped into two categories depending on the type of:
a) Electron beam field interaction
b) Amplification method
c) Power gain achieved
d) Construction methods
d) None of the mentioned
View Answer
Answer: a
Explanation: Microwave tubes are grouped into two categories depending on the
type of electron beam field interaction. They are linear or ‘O’ beam and crossed
field or the m type tube. Microwave tubes can also be classified as oscillators and
amplifiers.
4. The klystron tube used in a klystron amplifier is a _________ type beam
amplifier.
a) Linear beam
b) Crossed field
c) Parallel field
d) None of the mentioned
View Answer
Answer: a
Explanation: In klystron amplifier, the electron beam passes through two or more
resonant cavities. The first cavity accepts an RF input and modulates the electron
beam by bunching it into high density and low density regions.
5. In crossed field tubes, the electron beam traverses the length of the tube and is
parallel to the electric field.
a) True
b) False
View Answer
Answer: b
Explanation: In a crossed field or ‘m’ type tubes, the focusing field is
perpendicular to the accelerating electric field. Since the focusing field and
accelerating fields are perpendicular to each other, they are called crossed field
tubes.
6. ________ is a single cavity klystron tube that operates as on oscillator by using
a reflector electrode after the cavity.
a) Backward wave oscillator
b) Reflex klystron
c) Travelling wave tube
d) Magnetrons
View Answer
Answer: b
Explanation: Reflex klystron is a single cavity klystron tube that operates as on
oscillator by using a reflector electrode after the cavity to provide positive
feedback via the electron beam. It can be tuned by mechanically adjusting the
cavity size.
7. A major disadvantage of klystron amplifier is:
a) Low power gain
b) Low bandwidth
c) High source power
d) Design complexity
View Answer
Answer: b
Explanation: Klystron amplifier offers a very narrow operating bandwidth. This is
overcome in travelling wave tube (TWT). TWT is a linear beam amplifier that uses
an electron gun and a focusing magnet to accelerate beam of electrons through an
interaction region.
8. In a _________ oscillator, the RF wave travels along the helix from the collector
towards the electron gun.
a) Interaction oscillator
b) Backward wave oscillator
c) Magnetrons
d) None o the mentioned
View Answer
Answer: b
Explanation: In a backward wave oscillator, the RF wave travels along the helix
from the collector towards the electron gun. Thus the signal for oscillation is
provided by the bunched electron beam itself and oscillation occurs.
9. Extended interaction oscillator is a ________ beam oscillator that is similar to
klystron.
a) Linear beam
b) Crossed beam
c) Parallel beam
d) M beam
View Answer
Answer: a
Explanation: Extended interaction oscillator is a linear beam oscillator that uses an
interaction region consisting of several cavities coupled together, with positive
feedback to support oscillation.
10. Magnetrons are microwave devices that offer very high efficiencies of about
80%.
a) True
b) False
View Answer
Answer: a
Explanation: Magnetrons are capable of very high power outputs, on the order of
several kilowatts, and with efficiencies of 80% or more. But disadvantage of
 magnetron is that they are very noisy and cannot maintain frequency or phase
coherence when operated in pulse mode.

1. Klystron amplifiers have high noise output as compared to crossed field

amplifiers.
a) True
b) False
View Answer
Answer: b
Explanation: Crossed filed amplifiers have very good efficiencies – up to 80%, but
the gain is limited to 10-15 db) In addition, the CFA has a noisier output than
either a klystron amplifier or TWT. Its bandwidth can be up to 40%.
12. ____________ is a microwave device in which the frequency of operation is
determined by the biasing field strength.
a) VTM
b) Gyratron
c) Helix BWO
d) None of the mentioned
View Answer
Answer: b
Explanation: Gyratron is a microwave device in which the frequency of operation
is determined by the biasing field strength and the electron velocity, as opposed to
the dimensions of the tube itself. This makes the gyrator especially useful for
microwave frequencies.

The directivity in a receiving antenna

1. increases the intercept area in forward direction
2. reduces the noise picked up from other sources
3. provides a means of discriminating against undesired signals originating in
directions other than in which the desired transmitter lies.
Which of the above statements are correct?
A
1 only
.
B. 1 and 2 only
C
1, 2 and 3
.
D
2 and 3 only
.
Answer: Option C
Microwave: semiconductor devices

“PIN Diodes”.
1. A PIN diode consists of ______number of semiconductor layers.
a) Three
b) Two
c) Four
d) One
View Answer
Answer: a
Explanation: PIN diode is a p-type, intrinsic, n-type diode consisting of narrow
layer of p-type semiconductor and a narrow layer of n-type semiconductor
material, with a thicker region of intrinsic or very lightly n doped semiconductor
sandwiched between them.
2. The material out of which PIN diode is made is:
a) Silicon
b) Germanium
c) GaAs
d) None of the mentioned
View Answer
Answer: a
Explanation: Silicon is the semiconductor normally used because of its power
handling capability and it offers high resistivity for the intrinsic region. But
depending on the application, these days GaAs is also used in fabricating PIN
diodes.
3. The behavior of a PIN diode is entirely different from normal diodes at all
frequency of operation.
a) True
b) False
View Answer
Answer: b
Explanation: PIN diode acts as a ordinary diode at frequencies up to about
100MHz. at high frequencies it stops to rectify and then acts as a variable
resistance.
4. The junction resistance and capacitance of the intrinsic region in a PIN diode are
connected______ in the equivalent circuit of PIN diode.
a) Series
b) Parallel
c) Connected across package capacitance
d) None of the mentioned
View Answer
Answer: b
Explanation: The junction capacitance Cj and junction resistance Rj of a PIN diode
are connected in parallel in the equivalent circuit of a PIN diode. The package
resistance and package capacitance are connected in series to these junction
parameters.
5. The resistance of the PIN diode with positive bias voltage:
a) Increases
b) Decreases
c) Remains constant
d) Insufficient data
View Answer
Answer: b
Explanation: When the bias is varied on the PIN diode, its microwave resistance
RJ changes from a typical value of 6 KΩ under negative bias to perhaps 5 Ω under
forward bias. Thus if the diode is mounted on a 50Ω coaxial line, it will not
significantly load this line.
6. A PIN diode can be used in either a series or a shunt configuration to form a
__________
a) Single pole single throw switch
b) Single pole double throw switch
c) Amplifier
d) Oscillator
View Answer
Answer: a
Explanation: A PIN diode can be used in either a series or a shunt configuration to
form a single pole single throw switch. In the series configuration, the switch is on
when the diode is forward biased and off when the diode is reverse biased.
7. The working principle of series and shunt configuration single pole single throw
switch is the same.
a) True
b) False
View Answer
Answer: b
Explanation: In the series configuration, the switch is on when the diode is forward
biased and off when the diode is reverse biased. In the shunt configuration, forward
biasing the diode cuts-off the transmission while reverse biasing the diode ensures
transmission from input to output.
8. Under ideal conditions, when a PIN diode is used as a switch, the switch must
have _______ insertion loss in the ON state.
a) Maximum
b) Zero
c) Average
d) Insertion loss cannot be defined for a switch
View Answer
Answer: b
Explanation: Ideally, when PIN diode is used as switch, the switch should have
zero insertion loss in the ON state and infinite attenuation in the OFF state. These
are ideal conditions. But practically a good operating switch must have low
insertion loss.
9. When PIN diode is used as a switch, the expression for insertion loss of the
switch is given by:
a) 10 log (Po/PL)
b) 10 log (PL/P0)
c) 10 log (PL. Pₒ)
d) None of the mentioned
View Answer
Answer: a
Explanation: Insertion loss of a switch is defined as the ratio of incident power
applied to the load when switch is absent to the actual power delivered to the load.
10. For a shunt configuration switch, the diode impedance is 40 Ω and the
terminated line characteristic impedance is 50 Ω. Then the insertion loss of the
switch is:
a) 2.2 dB
b) 4.2 dB
c) 8.4 dB
d) 3.6 dB
View Answer
Answer: b
Explanation: Insertion loss of a shunt configuration switch is given by 20 log
(2ZD+Z0/2ZD). Substituting the given values in the above expression, the insertion
loss of the shunt configuration switch is 4.2 dB.
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11. In the series configuration of a PIN diode switch, the terminated load
impedance was found to be 50 Ω and the diode impedance was 60 Ω. Then the
insertion loss of the switch is:
a) 4 dB
b) 2 dB
c) 3.6 dB
d) 4.8 dB
View Answer
Answer: a
Explanation: Insertion loss of a shunt configuration switch is given by 20 log
(2ZD+Z0/2ZD). Substituting the given values in the above equation, the insertion
loss is 4 dB.
12. The number of PIN diodes used in SPST switch and SPDT switch are the same.
a) True
b) False
View Answer
Answer: b
Explanation: The number of PIN diodes in SPST switch is one, while the number
of PIN diodes used in single pole double throw switch is two.

“Varactor Diodes”.
1. Varactor diode is a semiconductor diode in which the _________ can be varied
as a function of reverse voltage of the diode.
a) Junction resistance
b) Junction capacitance
c) Junction impedance
d) None of the mentioned
View Answer
Answer: b
Explanation: Varactors (variable-capacitor) have non-linearity of capacitance
which is fast enough to follow microwaves. Varactor diode is a semiconductor
diode in which the junction capacitance can be varied as a function of reverse
voltage of the diode.
2. Any semiconductor diode has a junction capacitance varying with reverse bias.
If such a diode has microwave characteristics, it is called:
a) IMPATT diode
b) TRAPITT diode
c) SKOTTKY diode
d) None of the mentioned
View Answer
Answer: d
Explanation: Any semiconductor diode has a junction capacitance varying with
reverse bias. If such a diode has microwave characteristics, it is called varactor
diode. With the reverse bias, the junction is depleted of mobile carriers resulting in
a capacitance that is the diode behaves as a capacitance with the junction acting as
dielectric between two conducting plates.
3. The width of depletion region of a varactor diode ________with increase in
reverse bias voltage.
a) Increases
b) Decreases
c) Remains constant
d) None of the mentioned
View Answer
Answer: a
Explanation: The width of the depletion region goes on increasing with increase in
reverse bias voltage of the varactor diode. As the width of depletion region is an
inverse function for capacitance, as the width increases, capacitance decreases.
4. Diffused junction mesa silicon diodes are widely used at microwave frequencies.
a) True
b) False
View Answer
Answer: a
Explanation: Diffused junction mesa silicon diodes are widely used at microwave
frequencies. They are capable handling large powers and large break down
voltages. They have relative independence of ambient temperature and low noise.
5. Varactors made of ______ have higher frequency range of operation compared
to silicon fabricated varactor diodes.
a) Germanium
b) GaAs
c) GaN
d) None of the mentioned
View Answer
Answer: b
Explanation: Varactor diodes made of silicon have frequency range of operation of
25 GHz. Varactor diodes made of gallium arsenide operate in the frequency range
of 90 GHz. Varactors of gallium arsenide also have better at low temperature.
6. Varactor diodes are operated in _________ region to achieve maximum
efficiency possible.
a) Cutoff region
b) Saturation region
c) Reverse saturation region
d) Active region
View Answer
Answer: c
Explanation: Varactors are used between the reverse saturation point and a point
just above the avalanche region. The capacitance variation and the reverse voltage
swing are limited to between the operating regions mentioned above.
7. The cutoff frequency for operation of a varactor diode at a specific bias is given
by:
a) 1/2πRSCjv
b) 1/2πCSRjv
c) 1/2π√LC
d) None of the mentioned
View Answer
Answer: a
Explanation: Cutoff frequency for a certain bias voltage applied is given by
1/2πRSCjv. Here, Rs is the wafer resistance and Cjv is the junction capacitance
measured in the varactor diode for a given specific bias voltage V.
8. ___________ is an amplifier constructed using a device whose reactance is
varied to produce amplification.
a) Travelling wave tube
b) Parametric amplifier
c) Common emitter
d) Klystron amplifier
View Answer
Answer: b
Explanation: Parametric amplifier is an amplifier constructed using a device whose
reactance is varied to produce amplification. Varactor diode is the most widely
used element in a parametric amplifier.
9. Parametric amplifier is a ________ amplifier.
a) Low noise
b) High gain
c) Low gain
d) High noise
View Answer
Answer: a
Explanation: Parametric amplifiers are constructed using varactor diodes. Since
they do not involve any resistance, they result in low noise levels. There will be no
thermal noise, as the active element used involved is reactive and not resistive.
10. Parametric amplifiers find their application in long range RADAR and satellite
ground stations.
a) True
b) False
View Answer
Answer: a
Explanation: Due to the advantage of low noise amplification, parametric
amplifiers are used in applications when noise levels are high at the receiving end
but the amplification of noise must not occur. Such applications include long range
RADARS satellite ground stations, radio telescopes to name a few.

“GUNN Diodes”.
1. Silicon and germanium are called ___________ semiconductors.
a) direct gap
b) indirect gap
c) band gap
d) indirect band gap
View Answer
Answer: b
Explanation: The forbidden energy gap for silicon and germanium are respectively
1.21 eV in Si and 0.79 eV in germanium. Silicon and germanium are called
indirect gap semiconductors because the bottom of the conduction band does not
lie directly above the top of the valence band.
2. GaAs is used in the fabrication of GUNN diodes because:
a) GaAs is cost effective
b) It less temperature sensitive
c) it has low conduction band electrons
d) less forbidden energy gap
View Answer
Answer: d
Explanation: In GaAs, the conduction band lies directly above the top of the
valence band. The lowest energy conduction band in GaAs is called as primary
valley. GaAs consists of six secondary valleys. The bottom of one of the secondary
valley is at an energy difference of 0.35 eV with the bottom of the primary valley
in conduction band.
3. In a GaAs n-type specimen, the current generated is constant irrespective of the
electric filed applied to the specimen.
a) true
b) false
View Answer
Answer: b
Explanation: In a GaAs n-type specimen, when the electric field applied reaches a
threshold value of Eth, the current in the specimen becomes suddenly oscillatory
and with respect to time and these oscillations are in the microwave frequency
range. This effect is called Gunn Effect.
4. When the electric field applied to GaAs specimen is less than the threshold
electric field, the current in the material:
a) increases linearly
b) decreases linearly
c) increases exponentially
d) decreases exponentially
View Answer
Answer: a
Explanation: When the electric field applied is less than the threshold value of
electric field, the electrons jump from the valence band to the primary valley of the
conduction band and current increases linearly with electric field.
5. When the applied electric field exceeds the threshold value, electrons absorb
more energy from the field and become:
a) hot electrons
b) cold electrons
c) emission electrons
d) none of the mentioned
View Answer
Answer: a
Explanation: When the applied electric field exceeds the threshold value, electrons
absorb more energy from the field and become hot electrons. These electrons jump
into the lowest secondary valley in the conduction band. When the electrons
become hot, their mobility reduces.
6. GaAs is used in fabricating Gunn diode. Gunn diode is:
a) bulk device
b) sliced device
c) made of different type of semiconductor layers
d) none of the mentioned
View Answer
Answer: a
Explanation: A GUNN diode is a bulk device, that is, it does not contain any
junction but it is a slice of n-type GaAs. P-type GaAs does not exhibit Gunn Effect.
Hence it is a reversible and can be operated in both directions.
7. The electrodes of a Gunn diode are made of:
a) molybdenum
b) GaAs
c) gold
d) copper
View Answer
Answer: a
Explanation: Gunn diode is grown epitaxially onto a gold or copper plated
molybdenum electrode, out of gallium arsenide doped with silicon, tellurium or
selenium to make it n-type.
8. When either a voltage or current is applied to the terminals of bulk solid state
compound GaAs, a differential ______ is developed in that bulk device.
a) negative resistance
b) positive resistance
c) negative voltage
d) none of the mentioned
View Answer
Answer: a
Explanation: When either a voltage or current is applied to the terminals of a
sample of bulk solid state compound formed by group 5 and 3 elements of periodic
table, a differential resistance is developed in the bulk device. This fundamental
concept is called RWH theory.
9. The number of modes of operation for n type GaAs is:
a) two
b) three
c) four
d) five
View Answer
Answer: c
Explanation: n-type GaAs used for fabricating Gunn diode has four modes of
operation. They are Gunn oscillation mode, limited space charge accumulation
mode, and stable amplification mode bias circuit oscillation mode.
10. The free electron concentration in N-type GaAs is controlled by:
a) effective doping
b) bias voltage
c) drive current
d) none of the mentioned
View Answer
Answer: a
Explanation: The free electron concentration in n-type GaAs is controlled through
effective doping so that they range from 1014 to 1017 per cc at room temperature.
The typical specimen of n-type GaAs has the dimensions 150 µm by 150 µm.
11. The modes of operation of a Gunn diode are illustrated in a plot of voltage
applied to the Gunn diode v/s frequency of operation of Gunn diode.
a) true
b) false
View Answer
Answer: b
Explanation: A graph of plot of product of frequency and the length of the device
plotted along y-axis versus the product of doping concentration and length along
X- axis. These are the parameters on which the four modes of operation of Gunn
diode are explained.
12. The mode of operation in which the Gunn diode is not stable is:
a) Gunn oscillation mode
b) limited space charge accumulation mode
c) stable amplification mode
d) bias circuit oscillation mode
View Answer
Answer: a
Explanation: In Gunn oscillation mode, the device is unstable due to the formation
of accumulation layer and field domain. This high field domain moves from
cathode to anode.
13. The frequency of oscillation in Gunn diode is given by:
a) vdom/ Leff
b) Leff/ Vdom
c) Leff/ WVdom
d) none of the mentioned
View Answer
Answer: a
Explanation: In Gunn oscillation mode, the frequency of oscillation is given by
vdom/ Leff, where vdom is the domain velocity, Leff is effective length that the domain
moves from the time it is formed until the time a new domain is formed.
14. In Gunn diode oscillator, the Gunn diode is inserted into a waveguide cavity
formed by a short circuit termination at one end
a) true
b) false
View Answer
Answer: a
Explanation: The Gunn diode is mounted at the centre of the broad wall of a
shorted waveguide since for the dominant TE10 mode; the electric field is
maximum at the centre.
15. In a Gunn diode oscillator, the electron drift velocity was found to be 107
cm/second and the effective length is 20 microns, then the intrinsic frequency is:
a) 5 GHz
b) 6 GHz
c) 4 GHz
d) 2 GHz
View Answer
Answer: a
Explanation: The intrinsic frequency for a Gunn oscillator is given by Vd/L. Here
VD is the drift velocity and L is the effective length. Substituting the given values
in the above equation, intrinsic frequency is 5 GHz.

“IMPATT and BARITT Diodes”.

1. The material used to fabricate IMPATT diodes is GaAs since they have the
highest efficiency in all aspects.
a) true
b) false
View Answer
Answer: b
Explanation: IMPATT diodes can be fabricated using silicon, germanium, GaAs or
indium phosphide. Out of these materials, GaAs have highest efficiency, low noise
and high operating frequencies. But GaAs has a major disadvantage of complex
fabrication process and higher cost. So, GaAs are not preferred over silicon and
germanium.
2. When a reverse bias voltage exceeding the breakdown voltage is applied to an
IMPATT diode, it results in:
a) avalanche multiplication
b) break down of depletion region
c) high reverse saturation current
d) none of the mentioned
View Answer
Answer: a
Explanation: A reverse bias voltage exceeding the breakdown voltage is applied to
an IMPATT diode, a high electric field appears across the n+ p junction. This high
field imparts sufficient energy to the holes and also to valence electrons to raise
themselves to the conduction band. This results in avalanche multiplication of
electron hole pair.
3. To prevent an IMPATT diode from burning, a constant bias source is used to
maintain _______ at safe limit.
a) average current
b) average voltage
c) average bias voltage
d) average resistance
View Answer
Answer: a
Explanation: Avalanche multiplication is a cumulative process resulting in rapid
increase of carrier density. To prevent the diode from burning due to this increased
carrier density, a constant bias source is used to maintain average current at safe
limit.
4. The number of semiconductor layers in IMPATT diode is:
a) two
b) three
c) four
d) none of the mentioned
View Answer
Answer: c
Explanation: IMPATT diode consists of 4 layers according to the construction. It
consists of a p+ region and n+ layers at the two ends. In between these layers, a p
type layer and an intrinsic region is sandwiched.
5. The resonant frequency of an IMPATT diode is given by:
a) Vd/2l
b) Vd/l
c) Vd/2πl
d) Vdd/4πl
View Answer
Answer: a
Explanation: The resonant frequency of an IMPATT diode is given by the
expression Vd/2l. Here VD is the carrier drift velocity; L is the length of the
intrinsic region in the IMPATT diode.
6. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier
drift velocity are 107 cm/s, then the drift time of the carrier is:
a) 10-11 seconds
b) 2×10-11 seconds
c) 2.5×10-11 seconds
d) none of the mentioned
View Answer
Answer: b
Explanation: The drift time of the carrier is defined as the ratio of length of the
intrinsic region to the carrier drift velocity. Substituting the given values in this
relation, the drift time of the carrier is 2×10-11 seconds.
7. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier
drift velocity are 107 cm/s, then the nominal frequency of the diode is:
a) 12 GHz
b) 25 GHz
c) 30 GHz
d) 24 GHz
View Answer
Answer: b
Explanation: Nominal frequency is defined as the ratio of the carrier drift velocity
to twice the length of the intrinsic region. Substituting the given values in the
above equation, the nominal frequency is 25 GHz.
8. IMPATT diodes employ impact ionization technique which is a noisy
mechanism of generating charge carriers.
a) true
b) false
View Answer
Answer: a
Explanation: IMPATT devices employ impact ionization techniques which is too
noisy. Hence in order to achieve low noise figure, impact ionization is avoided in
BARITT diodes. The minority injection is provided by punch through of the
intermediate region.
9. An essential requirement for the BARITT diode is that the intermediate drift
region be completely filled to cause the punch through to occur.
a) true
b) false
View Answer
Answer: b
Explanation: An essential requirement for the BARITT diode is that the
intermediate drift region be completely filled to cause the punch through to the
emitter-base junction without causing avalanche breakdown of the base collector
junction.
10. If the RMS peak current in an IMPATT diode is 700 mA and if DC input
power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the
diode is:
a) 10.1 %
b) 10.21 %
c) 12 %
d) 15.2 %
View Answer
Answer: b
Explanation: Efficiency of IMPATT diode is defined as the ratio of output RMS
power to the input DC power. Calculating the RMS output power from the given
RMS current and substituting in the equation of efficiency, the efficiency is
10.21%.

11. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length
is 20 microns, then the critical voltage is:
a) 3.2 V
b) 6.4 V
c) 2.4 V
d) 6.5 V
View Answer
Answer: b
Explanation: Critical voltage of a Gunn diode oscillator is given by the expression
lEc where l is the effective length and Ec is the critical field. Substituting the given
values in the above equation, critical voltage is 6.4 volts.

This set of Microwave Engineering Multiple Choice Questions & Answers

(MCQs) focuses on “Heterojunction BJT – 1”.
1. BJTs are bipolar junction transistors. The name bipolar is given because:
a) they are made of n type and p type semiconductor
b) they have holes as charge carriers
c) they have electrons as charge carriers
d) none of the mentioned
View Answer
Answer: d
Explanation: In bipolar junction transistors, both electrons and holes are charge
carriers and both of them together constitute current flow in transistors. Since both
carriers result in current, they are called bipolar devices.
2. BJTs are suitable for RF applications because:
a) good performance in terms of frequency
b) power capacity
c) noise characteristics
d) all of the mentioned
View Answer
Answer: d
Explanation: BJTs designed to operate at certain frequency can be operated over a
wide range of frequencies hence offering higher bandwidth. Also they have high
power handling capacity and very good noise characteristics.
3. Bipolar junction transistors have _______ 1/f characteristics hence making them
suitable for oscillators.
a) high
b) low
c) constant
d) decreasing exponential
View Answer
Answer: b
Explanation: Bipolar junction transistors have very low 1/f noise. 1/f noise is
nothing but thermal noise. Hence BJTs are not very temperature and can be used at
high temperature applications as well.
4. Silicon junction transistors are used as amplifiers at frequency range of about:
a) 5-10 MHz
b) 2-10 GHz
c) 40-50 MHz
d) 12-45 GHz
View Answer
Answer: b
Explanation: Silicon junction transistors have unconditional stability as a two port
device at a wide range of frequencies. They are more suitable as amplifiers in the
frequency range of about 2-10 GHz. Junction transistors when used as oscillators
are used in the frequency range of about 20 GHz.
5. At frequency range of about 2-4 GHz, BJTs are preferred over FETs.
a) true
b) false
View Answer
Answer: a
Explanation: At about 2-4 GHz frequency range, BJTs have higher gain as
compared to FETs, power capacity is high and biasing can be done using a single
power supply. Because of these advantages, BJTs are preferred over FETs.
6. One major disadvantage of BJTs over FETs is that:
a) they have low gain
b) they do not have a good noise figure
c) low bandwidth
d) none of the mentioned
View Answer
Answer: b
Explanation: Bipolar junction transistors are subject to shot noise as well as
thermal noise effects, so their noise figure is not as good as that of FET. Noise
figure can pose serious problems at high operating frequencies.
7. Bipolar junction transistor is a ________ driven device.
a) current
b) voltage
c) power
d) none of the mentioned
View Answer
Answer: a
Explanation: Bipolar junction transistor is a current driven device where the
collector output current directly depends on the input base current. Base current
modulates the collector current of the device.
8. The upper frequency limit of BJT depends on the:
a) collector length in the transistor
b) base length
c) emitter length
d) driving voltage
View Answer
Answer: b
Explanation: The upper operating frequency limit of a BJT depends on the base
length of the transistor. Typical base length of a transistor is in the range of a 0.1
µm. the operating frequency is a few GHz for this base length.
9. In the hybrid –π model of a BJT, the capacitance Cc between the base and
collector in the hybrid –π model is ignored.
a) true
b) false
View Answer
Answer: a
Explanation: The capacitance Cc in the hybrid –π model is small and can be
neglected. This has the effect of making the S12 parameter of the BJT equal to zero,
implying that the power flows only in one direction through the device.
10. with the increase in the operating frequency of a BJT, the S22 parameter of the
transistor:
a) increases
b) decreases
c) remains constant
d) none of the mentioned
View Answer
Answer: b
Explanation: With increase in the operating frequency of the transistor,
S22 parameter of the transistor decreases. S22 parameter signifies the voltage
reflected back to port 2. S22parameter has a value of about 0.93 at 0.1 GHz
frequency and 0.33 at 4 GHz frequency.

“Heterojunction BJT – 2”.

1. The hybrid-π model of a BJT is useful for analysis at all frequency ranges and
variation of other transistor parameters.
a) true
b) false
View Answer
Answer: a
Explanation: The element values of the hybrid-π model are fairly constant over a
wide range of operating points, bias conditions, load conditions and frequency.
Otherwise, the element values become frequency, bias or load dependent in which
case the hybrid –π model becomes less useful.
2. If the S11 and S22 parameters of a common emitter operated BJT is high:
a) then the output and input ports are matched well
b) there is mismatch in the ports
c) the gain of the amplifier is high
d) none of the mentioned
View Answer
Answer: b
Explanation: S11 and S22 parameters of a two port network signify the amount of
signal to the same port that is excited by the source, a high value of these values
imply that these ports are not impedance matched properly.
3. If a common emitter configuration BJT is treated as a two port network, the gain
of the amplifier is roughly given by the S parameter:
a) S11
b) S12
c) S21
d) S22
View Answer
Answer: c
Explanation: When a BJT is represented as a two port network, where the base is
port 1 and collector is port 2. Gain of the amplifier is given by the parameter S21.
This parameter drops quickly with an increase in the operating frequency.
4. Short circuit current gain of BJT is given by the expression:
a) gm/ωC
b) ωC/ gm
c) gm/C
d) none of the mentioned
View Answer
Answer: a
Explanation: Short circuit current gain of BJT is defined as the ratio of output
collector current to the input base current assuming the base resistance to be zero.
The frequency at which the short circuit current gain of the amplifier is unity is
called upper frequency limit.
5. The output collector to emitter current of a BJT amplifier is independent of the
input base current of the amplifier.
a) true
b) false
View Answer
Answer: b
Explanation: BJT is a current controlled device. Output collector current is
controlled by the input base current. If the input base current is increased, the
collector current also increases.
6. The current gain of a BJT ________ with frequency.
a) increases
b) decreases
c) remains constant
d) none of the mentioned
View Answer
Answer: a
Explanation: The short circuit current gain of a BJT amplifier is given by the
expression gm/ωC. From the equation, it is seen that gain is inversely proportional
to frequency. As the frequency of operation of BJT increases, current gain of the
transistor reduces.
7. If a transistor has a short circuit current gain of 25 and the capacitance measured
in the hybrid-π model of the transistor was 60 pF. Then the threshold frequency of
operation of the transistor is:
a) 60 MHz
b) 45.6 GHz
c) 66.3 GHz
d) 34.8 GHz
View Answer
Answer: c
Explanation: The threshold frequency for a BJT is given by gm/2πC. substituting
the given values; the threshold operating frequency of the transistor is 66.3 GHz.

Field Effect Transistors

1. Field effect transistors are different from BJTs in that they are _________
a) monopolar devices
b) bipolar devices
c) bidirectional device
d) none of the mentioned
View Answer
Answer: a
Explanation: FETs are called monopolar devices, with only one carrier type, either
electrons or holes providing current flow through the device. N-channel FETs
employ electrons while p-channel FETs employ holes as source of current.

2. GaAs MESFET –metal semiconductor field effect transistor are one of the
widely used categories of FETs.
a) true
b) false
View Answer
Answer: a
Explanation: One of the most important developments in microwave technology
has been the GaAs metal semiconductor field effect transistor, as this device
permitted the first practical solid-state implementation of amplifiers and
oscillators.
3. At frequencies above 10GHz, MESFET are not suitable for microwave
applications due to parasitic effects.
a) true
b) false
View Answer
Answer: b
Explanation: GaAs MESFETs can be used at frequencies well into the millimeter
wave range, with high gain and low noise figure often making them the device of
choice in monolithic microwave integrated circuits above frequencies of 10 GHz.

4. Advantage of using GaAs in MESFET as compared to use of silicon is:

a) GaAs are cost effective
b) they have higher mobility
c) they have high resistance for flow of current in the reverse direction
d) none of the mentioned
View Answer
Answer: b
Explanation: The desired high gain and noise features of this transistor are a result
of high electron mobility of GaAs compared to silicon and the absence of shot
noise in them.

5. In MESFET, an applied signal at the gate modulates the electron carriers; this
produces _______ in the FET.
a) voltage amplification
b) voltage attenuation
c) electron multiplication
d) electron recombination
View Answer
Answer: a
Explanation: In operation, the electrons are drawn from the source to drain by a
positive voltage applied to the source and drain. These carriers are modulated by
the voltage applied to the gate hence resulting in voltage amplification.
6. The frequency of operation of an FET is limited by:
a) drain to source voltage
b) gate to source voltage
c) gate length
d) effective area of an FET
View Answer
Answer: c
Explanation: The frequency of operation of an FET is given by the gate length.
Present FETs have a gate length of the order of 0.2-0.6 µm, with corresponding
upper frequency limits of 100-50 GHz.

7. The S21 parameter for a MESFET is lesser than 1.

a) true
b) false
View Answer
Answer: b
Explanation: From the analysis of the small signal equivalent circuit of MESFE,
S21parameter of the transistor was found to be greater than one under normal
operating conditions. Here port 1 is at the gate and port 2 is at the drain.

8. The expression for short circuit current gain of an FET is given by:
a) gm/ ωCgs
b) Ig/gmVc
c) ωCgs/ gm
d) none of the mentioned
View Answer
Answer: a
Explanation: Short circuit current gain of an FET is defined as the ratio of drain
current to gate current when the output is short circuited. This is expressed as ID/IG.
This ratio in simplified form is given as gm/ ωCgs.

9. The upper threshold frequency of an FET, where short circuit gain is unity is
given by:
a) gm/2πCgs
b) gm/Cgs
c) gm/ 2π
d) none of the mentioned
View Answer
Answer: a
Explanation: The upper threshold frequency is dependent on the factor gm,
associated with the current generator of the small signal equivalent circuit. Cgs is
the capacitance measured between the gate and source terminals.

10. The scattering parameter S11 for an FET __________ with increase in the
frequency of operation of the transistor.
a) increases
b) decreases
c) remains constant
d) none of the mentioned
View Answer
Answer: b
Explanation: S11 parameter of an FET decreases with the increase in the frequency
of operation of an FET. The measured values are 0.97 at 1 GHz, and 0.49 at 12
GHz.

11. The curve of IDS v/s VDS of an FET does not vary with the gate to source
voltage applied.
a) true
b) false
View Answer
Answer: b
Explanation: Curve of IDS v/s VDS of an FET varies with the gate to source voltage
applied. As the gate to source voltage applied becomes more positive, the drain to
source current goes on increasing for an applied constant gate to source voltage.

12. High-power circuits generally use higher values of:

a) gate to source current
b) drain to source current
c) drain current
d) gate to source voltage
View Answer
Answer: c
Explanation: In order to achieve high drain current for high power applications,
DC bias voltage must be applied to both gate and the drain, without disturbing the
RF signal paths.

13. High drain current at RF levels is achieved with the biasing and decoupling
circuitry for a dual polarity supply.
a) true
b) false
View Answer
Answer: a
Explanation: High drain current at RF levels is achieved with the biasing and
decoupling circuitry for a dual polarity supply. The RF chokes provide a very low
DC resistance for biasing, and a very high impedance at RF frequencies to isolate
the signal from the bias supply.

Metal Oxide Semiconductor FET

1. There exists no difference between the construction of GaAs MESFET and
silicon MOSFET except for the material used in their construction.
a) True
b) False
View Answer
Answer: b
Explanation: There exists a difference between the construction of MESFET and
MOSFET. There is a thin insulating layer of silicon dioxide between the gate
contact and the channel region. Because the gate is insulated, it does not conduct
DC bias current.

2. MOSFETs can provide a power of several hundred watts when the devices are
packaged in:
a) Series
b) Parallel
c) Diagonal
d) None of the mentioned
View Answer
Answer: b
Explanation: MOSFETs can be used at frequencies into the UHF range and can
provide powers of several hundred watts when devices are packaged in parallel.
Laterally diffused MOSFETs have direct grounding of the source and can operate
at low microwave frequencies with high power.

3. High electron mobility transistors can be constructed with the use of single
semiconductor material like GaAs that have high electron mobility.
a) True
b) False
View Answer
Answer: b
Explanation: High electron mobility transistor is a hetero junction FET, meaning
that it does not use a single semiconductor material, but instead is constructed with
several layers of compound semiconductor materials.

4. The curve of IDS v/s VDS of an FET does not vary with the gate to source
voltage applied.
a) True
b) False
View Answer
Answer: b
Explanation: Curve of IDS v/s VDS of an FET varies with the gate to source
voltage applied. As the gate to source voltage applied becomes more positive, the
drain to source current goes on increasing for an applied constant gate to source
voltage.

5. High-power circuits generally use higher values of:

a) Gate to source current
b) Drain to source current
c) Drain current
c) Gate to source voltage
View Answer
Answer: c
Explanation: In order to achieve high drain current for high power applications,
DC bias voltage must be applied to both gate and the drain, without disturbing the
RF signal paths.

6. High drain current at RF levels is achieved with the biasing and decoupling
circuitry for a dual polarity supply.
a) True
b) False
View Answer
Answer: a
Explanation: High drain current at RF levels is achieved with the biasing and
decoupling circuitry for a dual polarity supply. The RF chokes provide a very low
DC resistance for biasing, and very high impedance at RF frequencies to isolate the
signal from the bias supply.

7. Since multiple layers of semiconductor materials is used in high electron

mobility transistors, this results in:
a) High gain
b) Power loss
c) Temperature sensitivity
d) Thermal stress
View Answer
Answer: d
Explanation: The multiple layers in the high electron mobility transistor result in
the thermal and mechanical stress in the layers. To avoid this, the layers usually
have matched crystal lattice.

8. A major disadvantage of high electron mobility transistor is that:

a) They have low gain
b) High manufacturing cost
c) Temperature sensitive
d) High driving voltage is required
View Answer
Answer: b
Explanation: High electron mobility transistors are devices containing multiple
layers of different semiconductor materials. This complicated structure of HEMT
requires sophisticated fabrication techniques leading to relatively high cost.

9. HEMT fabricated using GaN and aluminum gallium nitride on a silicon

substrate can be used in :
a) High power transmitters
b) High power receivers
c) RADAR
d) Smart antennas
View Answer
Answer: a
Explanation: GaN HEMT operate with drain voltages in the range of 20-40 V and
can deliver power up to 100 W at frequencies in the low microwave range, making
these devices popular for high power transmitters.

10. The scattering parameter S11 for GaN HELMT increases with increase in
frequency of operation
a) True
b) False
View Answer
Answer: b
Explanation: For GaN, the S11 parameter of the amplifier decreases with increase in
frequency of operation. Experimental results have shown that S11 parameter was
0.96 at 0.5 GHz of frequency and 0.88 at 4 GHz of frequency.