1. What is a nucleonic sensing method D. SCS 17.

The x-ray region of the

employing usually one or more electromagnetic spectrum has a
radioisotope sources and radiation 9. What is a three terminal device used corresponding range of wavelengths
detectors? to control large current to a load? from
A. Radiation sensing A. SCR A. 0.1 to 0.0001 nm
B. Sonic level sensing B. SCS B. 0.1 to 0.0001 pm
C. Conductivity level sensing C. GTO C. 0.1 to 0.0001 μm
D. Dielectric variation sensing D. Thyristor D. 0.1 to 0.0001 mm

2. What is concerned with the 10. What is the other term for 18. The three terminals of an SCR are
measurement of electric signals on the thermoelectric effect? the
scalp with arise from the underlying A. Seebeck effect A. anode, cathode, and grid
neural activity in the brain (including B. Hall effect B. cathode, anode, gate
synaptic sources)? C. Photoelectric effect C. anode, cathode, drain
A. ECG D. Thermal effect D. drain, source, gate
B. EEG
C. Ultrasound 11. What are the regions corresponding 19. If a body is considered as a
D. EKG to open-circuit condition for the conducting sphere of 0.5m radius its
controlled rectifier which block the flow capacitance to infinity is
3. In therapeutic radiology and in of charge from anode to cathode? A. 55 pF
nuclear medicine, the energies of A. Forward blocking regions B. 55 nF
interest range from about B. Reverse blocking regions C. 55 μF
A. 10 to 100 KeV C. Breakdown regions D. 55 F
B. 100 to 10000 KeV D. Both A and B above
C. 10000 to 10000 KeV 20. How many semiconductor layers
D. 1 to 10 KeV 12. The V-I characteristics for a triac in does an SCR have?
the first and third quadrants are A. Four
4. Which of the following is a four-layer essentially identical to those of B. Two
diode with an anode gate and a cathode ________ in the quotation. C. Three
gate? A. SCR D. Five
A. SCS B. UJT
B. SCR C. Transistor 21. A triac is a _______ switch.
C. SBS D. SCS A. unidirectional
D. SUS B. mechanical
13. When the temperature increases, C. bidirectional
5. What is basically a two-terminal the inter-base resistance of a UJT D. omnidirectional
parallel-inverse combination of A. Remains unchanged
semiconductor layers that permits B. Increases 22. Which of the following is the normal
triggering in either direction? C. Decreases way to turn on an SCR?
A. Diac D. is zero A. By breakover voltage
B. Triac B. By appropriate anode current
C. Quadrac 14. The three terminals of a triac are C. By appropriate cathode current
D. Shockley Diode A. drain, source, gate D. By appropriate gate current
B. two main terminals and a gate
6. What is the typical value of the terminal 23. A triac can pass a portion of
interbase resistance of UJTs? C. cathode, anode and gate ________ half cycle through the load
A. 20 KΩ D. anode, source, gate A. only positive
B. Between 4 to 4 KΩ B. only negative
C. 4 KΩ 15. A triac is equivalent to two SCRs C. both positive and negative
D. Between 4 to 10 KΩ A. in parallel D. neither positive nor negative
B. in inverse-parallel
7. PUT stands for C. in series 24. A diac has how many terminals?
A. Programmable Unijunction Transistor D. in inverse-series A. Two
B. Programmable Universal Transistor B. Three
C. Pulse Unijunction Transistor 16. In diagnostic radiology and for C. Four
D. Pulse Universal Transistor superficial therapy purposes, the energy
spectrum of radiation varies from about D. Five
8. Which transistor conducts current in A. 1 to 10 KeV 25. An SCR combines the feature of
both directions when turned on? B. 10 to 100 KeV A. a rectifier and resistance
A. Diac C. 100 to 10000 KeV B. a rectifier and capacitor
B. SCR D. 10000 to 100000 KeV C. a rectifier and transistor
C. Quadrac D. a rectifier and inductor
26. Which is the control element in an 35. An effect that reduces the possibility 44. When the emitter terminal of a UJT
SCR? of accidental triggering of the SCS. is open, the resistance between the
A. Anode A. Miller effect base-terminals is generally
B. Cathode B. Rate effect A. low
C. Gate C. End effect B. extremely low
D. Cathode supply D. Flywheel effect C. high
D. extremely high
27. How many semiconductor layers 36. Which of the following is a common
does a triac have? application of UJT? 45. AC power in a load can be
A. Two A. Amplifier controlled by connecting
B. Four B. Rectifier A. two SCRs in series
C. Three C. Mulitivibrator B. two SCRs in parallel
D. One D. Sawtooth generator C. two SCRs in parallel opposition
D. two SCRs in series opposition
28. A diac has how many 37. Which device does not have a gate
semiconductor layers? terminal? 46. Which equation defines the intrinsic
A. Three A. Triac stand off ratio (η) of UJTs?
B. Four B. SCR A. RB1 / (RB1 + RB2)
C. Two C. FET B. (RB1 + RB2) / RB1
D. Five D. Diac C. (RB1 + RB2) / RB2
D. RB1 + RB2
29. The p-type emitter of a UJT is 38. An SCR is a _______ triggered
_______ doped. device. 47. To turn off the SCR, which of the
A. lightly A. current following is done?
B. moderately B. power A. Reduce gate voltage to zero
C. heavily C. voltage B. Reverse bias the gate
D. not D. noise C. Reduce anode voltage to zero
D. Reduce cathode voltage to zero
30. A diac has 39. When UJTs is turned on, the
A. one pn junction resistance between emitter terminal and 48. Control system that maintains a
B. three pn junctions lower base terminal speed voltage, or other variable within
C. two pn junctions A. remains unchanged specified limits of a preset level.
D. four pn junctions B. increases A. Controller
C. decreases B. Regulator
31. A UJT is sometimes called a D. becomes zero C. Sensor
_______ diode. D. Computer
A. double-based 40. The UJT has
B. single-based A. two pn junctions 49. To turn on the UJT, the forward bias
C. a rectifier B. three pn junctions on emitter diode should be ________
D. a switching diode C. one pn junction the peak point voltage.
D. four on junction A. more than
32. A diac is _______ switch. B. less than
A. an AC 41. The UJT may be used as C. equal to
B. a mechanical A. an amplifier D. twice
C. a dc B. a rectifier
D. both ac and dc C. a sawtooth generator 50. When the temperature increases,
D. a multivibrator the intrinsic stand off ratio
33. An SCR is made of silicon and not A. increases
germanium because silicon. 42. Which of the following is the normal B. decreases
A. is inexpensive way to turn on a diac? C. essentially constant
B. has low leakage current A. By breakover voltage D. becomes zero
C. is mechanically strong B. By gate voltage
D. is tetravalent C. By gate current 51. What is dimensionless parameter of
D. By anode current the second-order characteristic
34. What is the control element in an equation?
SCR? 43. Power electronics deals with the A. Damping ratio
A. Gate control of ac power at what frequencies B. Accuracy
B. Anode essentially? C. Efficiency ratio
C. Grid A. 20 KHz D. Transfer function ratio
D. Cathode B. 1000 KHz
C. Frequencies less than 10 Hz
D. 60 Hz frequency
52. What is the ratio of two exponential 60. SCR is a rectifier constructed of 68. What is that voltage above when the
functions of time called? silicon material. Silicon is chosen SCR enters the conduction region?
A. Transfer function because A. Reverse breakover voltage
B. Damping ratio A. it is the most abundant material B. Forward breakover voltage
C. Efficiency B. of its strength and ruggedness C. Holding voltage
D. Gain C. it is much cheaper than any other D. Trigger voltage
material
53. A diac is turned on by D. of its high temperature and power 69. A locus or path of the roots traced
A. breakover voltage capabilities out on the s-plane as a parameter is
B. gate current changed.
C. gate voltage 61. A transduction principle used A. Root locus
D. anode current primarily in optical sensors. B. Hyperbola
A. Photoconductive transduction C. Parabola
54. An SCR whose state is controlled by B. Photovoltaic transduction D. Circle
the light falling upon a silicon C. Electromagnetic transduction
semiconductor layer of the device. D. Piezoelectric transduction 70. A control system in which the output
A. SCS is related to the input by device
B. GTO 62. What is a solid state equivalent of a parameters only.
C. Thyristor gas filled triode? A. Open-loop control system
D. LASCR A. Triac B. Closed-loop control system
B. Thyristor C. Servomechanism
55. A diac is simply C. SCR D. Feedback control system
A. a single junction D. SCS
B. a three junction device 71. What is that value of current below
C. a triac without a gate terminal 63. The supply voltage is generally which the SCR switches from the
D. the SCR ________ that of breakover voltage in conduction state to the forward blocking
an SCR. region under stated conditions?
56. What region lies between the peak A. equal to A. Holding current
point and valley point of UJT emitter B. less than B. Forward current
characteristic? C. greater than C. Reverse current
A. Saturation D. twice D. Trigger current
B. Cut off
C. Negative resistance 64. The triac is fundamentally a/an 72. Which is equivalent to a zener or
D. Positive resistance _________ with a gate terminal for avalanche region of the fundamental
controlling the turn-on conditions of the two-layer semiconductor diode?
57. What refers to the application of bilateral device in either direction. A. Reverse breakdown voltage
electronic theory, technology, A. SCR B. Forward breakdown voltage
instrumentation, and computing system B. Quadric C. Breakdown voltage
to biological research and medical C. Shockley diode D. Breakover voltage
problems? D. Diac
A. Medical electronics 73. What is the required gate triggering
B. Genetics electronics 65. When the supply voltage exceeds current of GTO?
C. Biomedical engineering the breakover voltage of an SCR, it A. 20 mA
D. Biomedical electronics A. starts conducting B. 10 mA
B. stops conducting C. 30 mA
58. Which device exhibits negative C. conducts leakage current D. 40 mA
resistance region? D. conducts terminal current
A. Diac 74. What is an automatic speed control
B. Triac 66. The step response of a first order device using the centrifugal force on
C. Transistor systems is given by rotating flyweights as the feedback
D. UJT A. y(t) = A0 element?
B. y(t) = A0 + A1es1t + A2es2t +A3es3t A. Regulator
59. The UJT operates in what region C. y(t) = A0 + A1es1t + A2es2t B. Flywheel governor
after peak point? D. y(t) = A0 + A1es1t C. Field control
A. Cut off D. Throttle valve
B. Negative resistance 67. A feedback control system in which
C. Saturation the controlled variable is mechanical 75. What is the sensing element of
D. Positive resistance position. acceleration transducer?
A. Closed-loop feedback control system A. Damper
B. Open-loop feedback control system B. Spring
C. Servomechanism C. Seismic mass
D. Mechanical servomechanism D. Crystal
76. What are some areas where GTO is 84. Which of the following can change 93. Acceleration transducers are also
applicable? the angle of conduction in SCR? called
A. Counters A. Changing anode voltage A. gyros
B. Pulse generators B. Changing gate voltage B. force transducers
C. Multivibrators C. Reverse biasing the gate C. tachometers
D. All of the above D. Changing cathode voltage D. accelerometers

77. What Greek word which means 85. An SCR is a member of what 94. When an SCR is combined to a
“switch”? family? switch, it is considered as a _______
A. Ristor A. Thyrector switch.
B. Trans B. Thyratron A. bidirectional
C. Thy C. Thyristor B. mechanical
D. Thyristor D. Transistor C. unidirectional
D. omnidirectional
78. What is the typical turn-on time of 86. How many pn junction does SCRs
an SCR? have? 95. When the firing angle of SCR is
A. 1 μs A. Two increased, its output
B. 5 μs B. Four A. decreases
C. 10 μs C. Three B. increases
D. 3 μs D. Five C. remains unchanged
D. doubles
79. An SCR is a solid state equivalent of 87. Which of the following is NOT a
which tube? method primarily used for density 96. When the SCR is OFF, the current
A. Triode sensing? in the circuit is
B. Gas-filled triode A. Sonic A. exactly zero
C. Pentode B. Radiations B. large leakage current
D. Tetrode C. Vibrating element C. small leakage current
D. Differential D. thermal current
80. The gate of an SCR is ________
with respect to its cathode. 88. When SCR starts conducting, then 97. The SCR can exercise control over
A. positive _________ losses all control. ________ of ac supply.
B. at zero potential A. gate A. positive or negative half-cycle
C. negative B. anode B. both positive and negative half-cycles
D. at infinite potential C. cathode C. only positive half-cycle
D. anode supply D. only negative half-cycle
81. A normally operated SCR has an
anode which is ________ with respect 89. An SCR when turned on has a 98. What is the most widely used
to cathode. typical voltage across of altitude and altitude-rate transducers?
A. negative A. zero A. Flowmeter
B. positive B. 0.1 V B. Psychometer
C. at zero potential C. infinite C. Gyro
D. at infinite potential D. 1 V D. Gygrometer

82. What device measures humidity 90. The typical turn-off time of an SCR 99. What sensing element is typically
directly with a single sensing element? is about made from a thin-walled tube formed
A. Hygrometer A. 20 to 40 μs into deep convolutions and sealed at
B. Tachometer B. 5 to 40 μs one end, whose displacement can then
C. Venturi meter C. 1 to 5 μs be made to act on a transduction
D. Hydrometer D. 15 to 25 μs element?
A. Diaphragm
83. What is one of the most widely used 91. An SCR is made of what material? B. Bellow
sensing elements particularly for A. Silicon C. Capsule
pressure ranges higher than 2 MPa? B. Carbon D. Bourdon tube
A. Bellows C. Germanium
B. Bourdon tube D. Gallium-arsenide 100. The voltage across an SCR when
C. Capsule 92. ECG stands for electrocardiography it is turned on is about
D. Straight tube while EEG stands for? A.0.5 V
A. electroextracellugraphy B. 0.1 V
B. electroemyography C. 1 V
C. electroencephalography D. 5 V
D. electrovectorcardiography
101. Referred to a bidirectional trigger 110. The most popular and typical 119. What is the breakover voltage of a
diode. breakover voltage of a diac. PUT if it is connected to a 15 V supply
a. Triac a. 32 V across the gate terminal?
b. UJT b. 16 V a. 10.7 V
c. BJT c. 8 V b. 23.7 V
d. Diac d. 4 V c. 15.7 V
d. 5.3 V
102. Voltage required to turn on any 111. The peak voltage of a PUT is
thyristor. a. VD + VBB 120. The gap between the forward
a. Trigger voltage b. VG + VBB blocking region and the forward
b. Breakover voltage c. VD + VG conduction region.
c. Barrier voltage d. VBB a. Band gap
d. Supply voltage b. Switching region
112. A UJT has η = 0.65 and is c. Jump gap
103. Also known as a four-layer diode. connected to a 20 V supply. What is its d. Negative resistance region
a. Diac VEB1?
b. Shockley diode a. 12 V 121. The cathode of the PUT is the
c. Zener diode b. 13.6 V counterpart of which terminal in UJT?
d. FET c. 12.7 V a. Anode
d. 14 V b. Base2
104. The thyristor counterpart of the c. Emitter
unijunction transistor. 113. The three terminal semiconductor d. Base1
a. UJT device that acts in either direction.
b. PUT a. Triac 122. An electronic switch that has the
c. SBS b. SCR highest single device current capacity
d. SCS c. Diac and can withstand overloads better.
d. SCS a. Thyratrons
105. Minimum current required to keep b. Ignitrons
a thyristor “on”. 114. The P of PUT stands for c. SCR
a. Holding current a. Programmable d. Triac
b. Trigger current b. Performance
c. Supply current c. Peak 123. Group of devices with 4 or more
d. Collector current d. Post semiconductor layers.
a. Transistors
106. A unidirectional-three terminal 115. The terminals of a UJT are b. Diodes
device, the most popular of thyristors. a. Gate, Anode, Cathode c. Thyristors
a. SCS b. Anode, Cathode d. Op-Amps
b. Triac c. Emitter, Base
c. UJT d. Emitter, Base1, Base2 124. Identify which of the following is a
d. SCR three layer device.
116. The lowest current that can a. SCS
107. The angle of an AC supply voltage prevent the transition of a UJT from b. Diac
during which an SCR is “off”. conduction to blocking region. c. Triac
a. Conduction angle a. Switching current d. PUT
b. Firing delay angle b. Emitter current
c. Right angle c. Valley current 125. What device can be modeled by a
d. Off angle d. Peak current diode and two resistors?
a. BJT
108. Thyristors are most often used as 117. The SCS has how many gate b. DIAC
a. Switches terminals? c. SCR
b. Amplifiers a. 0 d. UJT
c. Buffers b. 1
d. Decoders c. 2 126. A junction that is formed by adding
d. 3 controlled amounts of an impurity to the
109. The total internal series resistance melt during crystal growth is termed as
of the UJT. 118. What device has two terminals a. Fused junction
a. Bulk’s resistance connected in inverse-parallel that pass b. Unijunction
b. Total resistance in two directions? c. Alloy junction
c. Interbase resistance a. Triac d. Doped junction
d. RIS b. Diac
c. Shockley
d. SCR
127. A triac is a ________. 135. Which device incorporates a 143. Electron tube containing mercury
a. 2 terminal switch terminal for synchronizing purposes? functioning as a rectifier.
b. 2 terminal bilateral switch a. Diac a. Thyratron
c. 3 terminal unilateral switch b. Triac b. Ignitron
d. 3 terminal bidirectional switch c. SUS c. Thyrector
d. SCR d. SCR
128. A thyristor equivalent of a thyratron
tube is ________. 136. An SCR is a _________. 144. How do you stop the conduction
a. Diac a. Unijunction device during which the SCR is also
b. Triac b. Device with three junctions conducting?
c. SCR c. Device with four junctions a. Remove voltage gate
d. PUT d. Device with two junctions b. Increase cathode voltage
c. Interrupt anode current
129. Which of the following describes a 137. A thyristor can be turned off d. Reduce gate current
triac? a. By reducing the anode current below
a. Conducts when not triggered the holding current value 145. A series RC connected in parallel
b. Conducts when not triggered in both b. By reversing the anode voltage with an SCR to eliminate false triggering
directions c. Either a or b is the _______.
c. Conducts when triggered in one d. Both a and b a. Crowbar
direction b. Snubber
d. Conducts when triggered in both 138. Minimum duration of pulse c. Varistor
direction triggering system for thyristors is d. Eliminator
________.
130. Minimum anode current to hold a a. At least 10 microseconds 146. Which are the three terminals of a
thyristor at conduction. b. At least 30 milliseconds TRIAC?
a. Trigger c. At least 10 milliseconds a. Gate, anode1 and anode2
b. Maintaining current d. At least 1 second b. Gate, source and sink
c. Holding current c. Base, emitter and collector
d. Threshold voltage 139. A device that cannot be triggered d. Emitter, base1 and base2
by voltage of either polarity is
131. General term for semiconductor ________. 147. The term used to describe the
devices primarily used as switches. a. Diac process whereby two transistors with
a. Shockley b. Triac positive feedback are used to simulate
b. Thyratron c. SCS the action of the thyristor.
c. Thyristor d. All of the above a. Arcing
d. Relay b. Latching
140. Technically, what is dicing means? c. Damping
132. A two-terminal, unidirectional a. Process of joining two diacs d. Switching
thyristor. b. Circuit of reducing noise
a. DIAC c. Device for reducing magnetic and 148. The minimum emitter to base
b. Shockley radio interference voltage to trigger the UJT is the
c. TRIAC d. Process of breaking the silicon slice ________.
d. Diode into chips a. Forward breakover voltage
b. Trigger
133. A thyristor is basically 141. The term used to describe the c. Breakdown voltage
__________. process whereby two transistors with d. Peak voltage
a. PNPN device positive feedback are used to simulate
b. A combination of diac and triac the action of the thyristor. 149. The ratio of the emitter to base1
c. A set of SCRs a. Arcing resistance to the interbase resistance of
d. A set of SCR, diac and triac b. Latching a UJT is called ________.
c. Damping a. Aspect ratio
134. What is the PNPN device with two d. Switching b. Current gain
gates? c. Voltage gain
a. Diac 142. It is the minimum anode current to d. Intrinsic standoff ratio
b. Triac hold a thyristor at conduction.
c. SUS a. Trigger 150. For a UJT, it is the region between
d. SCS b. Maintaining current the peak and valley points as seen in its
c. Holding current characteristics curve.
d. Threshold voltage a. Active region
b. Negative resistance region
c. Trigger region
d. Saturation region
 158. Which of the following does not 166. The minimum emitter to base 1
151. This device is two zener diodes have a base terminal? voltage to trigger the UJT.
connected back to back in series and is a. UJT a. Forward breakover voltage
used to support voltage surges and b. PNP b. Trigger
transients. c. SCR c. Breakdown voltage
a. Thyristor d. NPN d. Peak voltage
b. Varactor
c. Thyrector 159. A series RC circuit that is 167. The ratio of the emitter to base1
d. Phanatron connected in parallel with an SCR to resistance to the interbase resistance of
eliminate false triggering. a UJT.
152. Refers to the number of degrees of a. Crowbar a. Aspect ratio
an AC cycle during which the SCR is b. Snubber b. Current gain
turned on. c. Varistor c. Voltage gain
a. Conduction angle d. Eliminator d. Intrinsic standoff ratio
b. Firing delay angle
c. Induction angle 160. A circuit that protects a sensitive 168. For UJT, it is the region between
d. ON angle circuit from a sudden increase in supply the peak and valley points.
voltage. a. Active region
153. A four-element solid state device a. Crowbar b. Negative resistance region
that combines the characteristics of a b. Snubber c. Trigger region
both diodes and transistors. c. Varistor d. Saturation region
a. Varactor d. Eliminator
b. Zener diode 169. Typical breakover voltage of an
c. Tunnel diode 161. A two-terminal, bidirectional SBS.
d. SCR thyristor. a. 2 V
a. DIAC b. 4 V
154. Electron tube equivalent to solid b. Shockley c. 8 V
state SCR. c. TRIAC d. 16 V
a. Triode d. Diode
b. VTVM 170. The trigger current is applied to
c. CRT 162. A DIAC is equivalent to inverse the…
d. Thyratron parallel combination of a. Anode
a. Shockley diodes b. Gate
155. Find the two stable operating b. Schottky c. Cathode
conditions of an SCR. c. BJT d. Base
a. Conducting and non-conducting d. SCR’s
b. Oscillating and quiescent 171. The region where breakover
c. NPN conduction and PNP conduction 163. A TRIAC is equivalent to inverse voltage of the SBS drops to 1 V
d. Forward conducting and reverse parallel combination of instantaneously.
conducting a. Shockley a. Falldown region
b. Schottky b. Fallback region
156. How do you stop conduction during c. BJT c. Breakback region
which SCR is also conducting? d. SCR’s d. Breakdown region
a. Remove voltage gate
b. Increase cathode voltage 164. Which are the three terminals of a 172. The ratio of RB1 and RBB is called
c. Interrupt anode current TRIAC? a. Intrinsic standoff ratio
d. Reduce gate current a. Gate, anode1 and anode2 b. Reuber’s ratio
b. Gate, source and sink c. Common mode rejection ratio
157. When an SCR is triggered or on c. Base, emitter and collector d. Cat’s ratio
conducting, its electrical characteristics d. Emitter, base1 and base2
are similar to what other solid-state 173. The time between the first
device (as measured between its 165. Which device can be modeled by a application of electrode force and the
cathode and anode)? diode and two resistors? first application of welding current.
a. The junction diode a. BJT a. Squeeze time
b. The varactor diode b. DIAC b. Weld time
c. The tunnel diode c. SCR c. Hold time
d. The hotcarrier diode d. UJT d. Off period
174. Process wherein coalescence is 182. Machine component made up of 191. The last step in welding time
produced by the heat obtained from the the transformer and the current control.
resistance of the workpiece to the flow regulator. a. Off period
of low voltage, high density electric a. Control system b. Weld time
current in a circuit. b. Electrical system c. Squeeze time
a. Forge welding c. Electrode system d. Hold time
b. Resistance welding d. Mechanical system
c. Ultrasonic welding 192. The relative maximum workpiece
d. LBW 183. Welder machine with capacities up thickness where spot welding can be
to 500 kVa used.
175. Time when electrode force is a. Miniature welders a. 0.5 in
applied but the current is shut off. b. Rocker-arm welder b. 1 in.
a. Off period c. Press-type welder c. 1.5 in.
b. Hold time d. Portable spot welder d. 0.25 in.
c. Squeeze time
d. Weld time 184. Regulates the time of the welding 193. Resistance welding was developed
cycle. by this man in and revolutionized the
176. The time when electrode force is a. Electrode welding industry.
released. b. Current regulator a. Isaac Asimov
a. Hold time c. Control system b. Karel Capek
b. Squeeze time d. Mechanical system c. Thomas Seebeck
c. Off period d. Elihu Thomson
d. Weld time 185. Welding machine use for large
workpieces. 194. The year when resistance welding
177. The fusion of the grain structure of a. Miniature welders was discovered.
materials. b. Rocker-arm welder a. 1935
a. Forge c. Press-type welder b. 1798
b. Weld d. Portable spot welder c. 1886
c. Recombination d. 1945
d. Coalescence 186. Another name for hammer welding
a. Fusion welding 195. It is the fusion or growing of the
178. Time when current is applied to the b. RW materials being together.
workpiece. c. Maul welding a. Coalition
a. Weld time d. Forge welding b. Coincidence
b. Squeeze time c. Coalescense
c. Hold time 187. Referred to as a localized d. Mixing
d. Off period coalescence
a. Weld 196. Arc welding requires a voltage
179. Heat in resistance welding is b. Mold around _________.
produced by the following factors except c. Cast a. 60 – 100 V
one d. Metal b. 150 -200 V
a. Time duration c. 400 – 440 V
b. Current 188. Part of the welding electric circuit d. 1000 – 5000 V
c. Electrical resistance that is used to produce high amperage
d. Pressure applied current at low voltages. 197. During arc welding, the current is
a. Capacitor in the range of _________.
180. Resistance welding machine b. Voltage regulator a. 1 – 5 A
component that holds the workpieces. c. Transformer b. 5 – 50 A
a. Electrical circuit d. The secondary circuit c. 50 – 400 A
b. Electrode system d. 500 – 4000 A
c. Mechanical system 189. The overlapped RSW.
d. None of the above a. RSEW (Resistance Seam Welding) 198. The body structure of the car is
b. ORSW welded by _________.
181. Resistance spot welding (RSW) c. OSW a. Gas welding
machine type that is controlled by d. USW b. Spot welding
hydraulic cylinders. c. Induction welding
a. Miniature welders 190. Spot welding are most commonly d. Arc welding
b. Rocker-arm welder used in
c. Press-type welder a. Ships
d. Portable spot welder b. Automobiles
c. Airplanes
d. Rafts
199. For inspection of welding defects in D. None of the above 215. The four-layer devices with a
thick metals, which of the following ray control mechanism are commonly
is used to photograph thick metals 207. In a certain UJT rB1 is 2.5 kΩ and referred to as ___________.
objects? rB2 = 4 kΩ. What is the intrinsic A. thyristors
a. Gamma rays standoff ratio? B. transistors
b. Cosmic rays A. 0.61538 C. diodes
c. Infrared rays B. 0.38461 D. None of the above
d. Ultraviolet rays C. 2.6
D. 0.8125 216. What is that voltage above when
200. The voltage across an SCR when the SCR enters the conduction region?
it is turned on is about 208. When SCR starts conducting, then A. Reverse breakover voltage
a. 0.5 V __________ losses all control. B. Forward breakover voltage
b. 0.1 V A. gate C. Holding voltage
c. 1 V B. anode D. Trigger voltage
d. 5 V C. cathode
D. anode supply 217. It is a three-terminal silicon diode
201. For an SCR, dv/dt protection is with the ability to control a large ac
achieved through the use of:</> 209. You have the schematic diagram power with a small signal.
A. RL in series with SCR of several types of circuits. Which of A. TRIAC
B. RC across SCR these circuits most likely uses a triac? B. SCR
C. L in series with SCR A. an oscillator C. UJT
D. RC in series with SCR B. an ac motor control D. SCS
C. a programmable oscillator
202. A technique use to turn off a D. an amplifier 218. The smallest amount of current
thyristor using an external circuit which that the cathode-anode can have, and
causes the anode to become negatively 210. Determine RB1 for a silicon PUT if still sustain conduction of an SCR is
biased. it is determined that h = 0.84, VP = 11.2 called the:
A. force commutation V, and RB2 = 5 kΩ A. maximum forward current
B. reverse triggering A. 12.65 kΩ B. maximum forward gate current
C. negative feedback B. 16.25 kΩ C. holding current
D. doping C. 20.00 kΩ D. reverse gate leakage current
D. 26.25 kΩ
203. The turn-off time of thyristor is 30 219. It is the minimum additional current
m sec at 50°C. Its turn-off time at 100° 211. Which of the following devices that can make up for any missing input
is does not have a cathode terminal? (gate) current in order to keep the
A. same A. SCR device ON.
B. 15 m sec B. SCS A. leakage current
C. 60 m sec C. TRIAC B. ac current
D. 100 m sec D. Shockley diode C. holding current
D. switching current
204. The peak and valley currents of the 212. The UJT operates in what region
PUT are typically ___________ those of after peak point? 220. The PUT (programmable
a similarly rated UJT. A. Cut off unijunction transistor) is actually a type
A. lower than B. Negative resistance of:
B. the same as C. Saturation A. UJT thyristor
C. higher than D. Positive resistance B. FET device
D. None of the above C. TRIAC
213. What is basically a two-terminal D. SCR
205. What is a solid state equivalent of parallel-inverse combination of
a gas filled triode? semiconductor layers that permits 221. What is the typical value of the
A. Triac triggering in either direction? interbase resistance of UJTs?
B. Thyristor A. DIAC A. 20 KΩ
C. SCR B. TRIAC B. Between 4 to 4 KΩ
D. SCS C. QUADRAC C. 4 KΩ
D. Shockley Diode D. Between 4 to 10 KΩ
206. The method(s) for turning off an 222. Which of the following is a four-
SCR is (are) categorized as 214. Which device does not have a gate layer diode with an anode gate and a
___________. terminal? cathode gate?
A. current interruption A. Triac A. SCS
B. forced commutation B. SCR B. SCR
C. both current interruption and forced C. FET C. SBS
commutation D. Diac: D. SUS
223. SCR is a rectifier constructed of 231. It is like a low current SCR with two 239. A normally operated SCR has an
silicon material. Silicon is chosen gate terminals. anode which is ___________ with
because A. UJT respect to cathode.
A. it is the most abundant material B. PUT A. negative
B. of its strength and ruggedness C. SCR B. positive
C. it is much cheaper than any other D. SCS C. at zero potential
material D. at infinite potential
D. of its high temperature and power 232. What is the typical value of the
capabilities reverse resistance of SCRs? 240. Which of the following devices has
A. 1 Ω to 10 Ω (have) four layers of semiconductor
224. When the temperature increases, B. 100 Ω to 1 kΩ materials?
the intrinsic standoff ratio C. 1 kΩ to 50 kΩ A. Silicon-controlled switch (SCS)
A. increases D. 100 kΩ or more B. Gate turn-off switch (GTO)
B. decreases C. Light-activated silicon-controlled
C. essentially constant 233. Which of the following is the rectifier (LASCR)
D. becomes zero normal way to turn on a diac? D. All of the above
A. By breakover voltage
225. SCRs have been designed to B. By gate voltage 241. How many pn junction does SCRs
control powers as high as C. By gate current have?
___________, with individual ratings as D. By anode current A. Two
high as ___________ at __________. B. Four
A. 1800 MW, 10 A, 2000 V 234. In a SCR circuit, the angle of C. Three
B. 1800 MW, 2000 A, 10 V conduction can be changed by D. Five
C. 10 MW, 2000 A, 1800 V changing
D. 2000 MW, 10 A, 1800 V A. anode voltage 242. The silicon-controlled switch (SCS)
B. anode current is similar in construction to the
226. An SCR is a member of what C. forward current rating A. triac.
family? D. gate current B. diac.
A. Thyrector C. SCR.
B. Thyratron 235. The function of snubber circuit D. 4-layer diode.
C. Thyristor connected across the SCR is to:
D. Transistor A. Suppress dv/dt 243. Which of the following devices has
B. Increase dv/dt nearly the same turn-on time as turn-off
227. Which of the following can change C. Decrease dv/dt time?
the angle of conduction in SCR? D. Decrease di/dt A. SCR
A. Changing anode voltage B. GTO
B. Changing gate voltage 236. An SCR is made of what material? C. SCS
C. Reverse biasing the gate A. Silicon D. LASCR
D. Changing cathode voltage B. Carbon
C. Germanium 244. Which of the following is (are) the
228. What is the frequency range of D. Gallium-arsenide advantages of the SCS over a
application of SCRs? corresponding SCR?
A. About 10 kHz 237. The SCR can exercise control over A. Reduced turn-off time
B. About 50 kHz ____________ of ac supply. B. Increased control and triggering
C. About 250 kHz A. positive or negative half-cycle sensitivity
D. About 1 mHz B. both positive and negative half-cycles C. More predictable firing situation
C. only positive half-cycle D. All of the above
229. The minimum operating voltage of D. only negative half-cycle
the UJT is typically ____________ that 245. An effect that reduces the
of a similarly rated PUT. 238. Which of the following conditions is possibility of accidental triggering of the
A. lower than necessary for triggering system for SCS.
B. the same as thyristors? A. Miller effect
C. higher than A. It should be synchronized with the B. Rate effect
D. None of the above main supply C. End effect
B. It must use separate power supply D. Flywheel effect
230. A UJT is sometimes called a C. It should provide a train of pulses
___________ diode. D. None of these
A. double-based
B. single-based
C. a rectifier
D. a switching diode
246. An SCR whose state is controlled 254. An SCR is a ___________ 262. You need to design a relaxation
by the light falling upon a silicon triggered device. oscillator circuit. The most likely device
semiconductor layer of the device. A. current to use might be
A. SCS B. power A. an SCR.
B. GTO C. voltage B. a UJT.
C. Thyristor D. noise C. a triac.
D. LASCR D. a 4-layer diode.
255. Anode current in a thyristor is
247. Power electronics deals with the made up of: 263. The ___________ can be
control of ac power at what frequencies A. Electrons only externally programmed to turn on at a
essentially? B. Electrons or holes desired anode-to-gate voltage level.
A. 20 KHz C. Electrons and holes A. UJT
B. 1000 KHz D. Holes only B. PUT
C. Frequencies less than 10 Hz C. SCR
D. 60 Hz frequency 256. Once a DIAC is conducting, the D. SCS
only way to turn it off is with:
248. To turn on the UJT, the forward A. a positive gate voltage 264. It is the minimum current which
bias on emitter diode should be B. a negative gate voltage must pass through a circuit in order for it
__________ the peak point voltage. C. low-current dropout to remain in the ‘ON’ state.
A. more than D. breakover A. leakage current
B. less than B. ac current
C. equal to 257. The V-I characteristics for a triac in C. holding current
D. twice the first and third quadrants are D. switching current
essentially identical to those of
249. What is the resistance of a certain ________ in the quotation. 265. What is that value of current below
4-layer diode in the forward-blocking A. SCR which the SCR switches from the
region if VAK = 15 V and IA = 1 uA B. UJT conduction state to the forward blocking
A. 15 Ω C. Transistor region under stated conditions?
B. 21.21 MΩ D. SCS A. Holding current
C. 15 M Ω B. Forward current
D. 10.61 MΩ 258. To turn off the SCR, which of the C. Reverse current
following is done? D. Trigger current
250. What is the peak-point voltage for A. Reduce gate voltage to zero
the UJT in problem 76 if VBB = 15 V? B. Reverse bias the gate 266. A diac is turned on by
A. 10.605 C. Reduce anode voltage to zero A. breakover voltage
B. 5.76912 D. Reduce cathode voltage to zero B. gate current
C. 6.46915 C. gate voltage
D. 0.8125 259. Your boss has asked you to D. anode current
recommend a thyristor that will enable
251. The SCR is turned-off when the you to turn it on with a pulse and also 267. You have a light-dimmer circuit
anode current falls below turn it off with a pulse. Which of the using an SCR. In testing the circuit, you
A. forward current rating following should you recommend? find that IG = 0 mA and the light is still
B. breakover voltage A. an SCR on. You conclude that the trouble might
C. holding current B. an SCS be one of the following:
D. latching current C. a PUT A. the SCR is open.
D. a triac B. the switch is faulty.
252. When an SCR is combined to a C. the gate circuit is shorted.
switch, it is considered as a ________ 260. The current from that D. this is normal; nothing is wrong.
switch. semiconductor device when it is
A. bidirectional reversed biased. 268. Which equation defines the
B. mechanical A. maximum forward current intrinsic standoff ratio (η) of UJTs?
C. unidirectional B. maximum forward gate current A. RB1 / (RB1 + RB2)
D. omnidirectional C. holding current B. (RB1 + RB2) / RB1
D. leakage current C. (RB1 + RB2) / RB2
253. The p-type emitter of a UJT is D. RB1 + RB2
________ doped 261. What is the range of the turn-on
A. lightly times in high-power SCR devices? 269. The voltage across an SCR when
B. moderately A. 30 µs to 100 µs it is turned on is about
C. heavily B. 10 µs to 25 µs A. 0.5 V
D. not C. 5 µs to 8 µs B. 0.1 V
D. 1 µs to 5 µs C. 1 V
D. 5 V
 278. An SCR is a solid state equivalent 285. An SCR combines the feature of
270. The typical turn-off time of an SCR of which tube? A. a rectifier and resistance
is about A. Triode B. a rectifier and capacitor
A. 20 to 40 μs B. Gas-filled triode C. a rectifier and transistor
B. 5 to 40 μs C. Pentode D. a rectifier and inductor
C. 1 to 5 μs D. Tetrode
D. 15 to 25 μs 286. It is voltage-controlled fully
279. It is a special type of thyristor, controllable thyristor similar in operation
271. Which of the following devices has which is a high-power semiconductor with GTO but it has a voltage controlled
the smallest turn-off time? device but are fully controllable switches insulated gate.
A. SCR which can be turned on and off by their A. PUT
B. GTO third lead. B. MCT
C. SCS A. PUT C. UJT
D. LASCR B. MCT D. MGT
C. SCS
272. A triac is equivalent to two SCRs D. GTO 287. The three terminals of a triac are
A. in parallel A. drain, source, gate
B. in inverse-parallel 280. When the temperature increases, B. two main terminals and a gate
C. in series the inter-base resistance of a UJT terminal
D. in inverse-series A. Remains unchanged C. cathode, anode and gate
B. Increases D. anode, source, gate
273. It is the phase angle relative to the C. Decreases
power line at which point the gate is D. is zero 288. A triac can pass a portion of
fired to commit the anode to conduct to __________ half cycle through the load
the cathode 281. When checking a good SCR or A. only positive
A. right angle TRIAC with an ohmmeter it will: B. only negative
B. reverse angle A. show high resistance in both C. both positive and negative
C. conduction angle directions D. neither positive nor negative
D. firing angle B. show low resistance with positive on
anode and negative on cathode, and 289. When the SCR is OFF, the current
274. It is the total resistance of the high resistance when reversed in the circuit is
silicon bar from one end to another with C. show high resistance with negative A. exactly zero
emitter terminal open. on anode and positive on cathode, and B. large leakage current
A. gate resistance low resistance when reversed C. small leakage current
B. base resistance D. show low resistance in both D. thermal current
C. emitter resistance directions
D. interbase resistance 290. What is a three terminal device
282. The UJT may be used as used to control large current to a load?
275. Holding current of a thyristor is: A. an amplifier A. SCR
A. Less than latching current B. a rectifier B. SCS
B. More than latching current C. a sawtooth generator C. GTO
C. Equal to latching current D. a multivibrator D. Thyristor
D. Zero
283. A resistor connected across the 291. What Greek word which means
276. An SCR is a solid state equivalent gate and cathode of an SCR in a circuit “switch”?
of which tube? increases its A. Ristor
A. Triode A. dv/dt rating B. Trans
B. Gas-filled triode B. Holding current C. Thy
C. Pentode C. Noise Immunity D. Thyristor
D. Tetrode D. Turn-off time
292. The ____________ can conduct
277. What is the typical turn-on time of 284. AC power in a load can be current in either direction and is turned
an SCR? controlled by connecting on when a breakover voltage is
A. 1 μs A. two SCRs in series exceeded.
B. 5 μs B. two SCRs in parallel A. SCR
C. 10 μs C. two SCRs in parallel opposition B. Diac
D. 3 μs D. two SCRs in series opposition C. SCS
D. Triac
293. A resistor connected across the 301. One type of circuit control device 308. A semiconductor, electronic switch
gate and cathode of an SCR increases which may be manual, automatic or that has the highest single-device
its: multi-contact current rating
A. Turn off time A. fuse A. thyristor
B. Holding current B. breaker B. triac
C. Noise immunity C. switch C. SCR
D. dv/dt rating D. relay D. Quadric

294. Like an SCR, it is also a four layer 302. What are the primary methods of 309. The purpose of installing thyrectors
device but with a gate connected to the controlling electrical power? across the incoming power lines to the
N-region adjacent to the anode. A. by using manual switches and speed control system is to
A. TRIAC rheostats ___________.
B. PUT B. by using variable reactance and A. cause the motor to caution
C. DIAC transformers B. protect drive circuits from high
D. SCS C. by using electronic switches, such as voltage transient surges
diodes, transistors thyratrons, and C. increase the counter emf
295. An SCR is made of silicon and not thyristors D. allow the field winding current to
germanium because silicon. D. all of the above continue flowing
A. is inexpensive
B. has low leakage current 303. Common method(s) of controlling 310. Semiconductor devices equivalent
C. is mechanically strong electrical power with reactance to thyratrons are generally called
D. is tetravalent A. switching a tapped inductor A. thyrector
B. using a saturable reactor B. thyristor
296. The triac is fundamentally a/an C. by a matching transformer C. diac
____________ with a gate terminal for D. A and B above D. ignitron
controlling the turn-on conditions of the
bilateral device in either direction. 304. A reactive device used in 11. Using electronic devices as
A. SCR controlling electrical power by using two switches, what is(are) the general
B. Quadric windings on a common iron core. The methods of controlling electrical power?
C. Shockley Diode control winding is supplied with small A. phase control
D. Diac dc-current which causes the reactance B. zero-voltage switching
of large ac-winding to change C. static switching
297. An opto-isolator contains accordingly. D. all of the above
___________. A. tapped inductor
A. an infrared LED B. saturable reactor 312. Which power control switching
B. a photodetector C. auto transformer method that greatly generates RFI or
C. both an infrared LED and a D. LVDT EMI and is therefore limited to low-
photodetector frequency applications?
D. None of the above 305. A saturable reactor with A. phase control
regenerative feedback. B. zero-voltage switching
298. Which of the following devices is A. tapped inductor C. inverter control
unquestionably of the greatest interest B. auto transformer D. static switching
today? C. LVDT
A. SCR D. magnetic amplifier 313. One of the electronic
B. GTO semiconductor devices known as diac,
D. LASCR 6. Thyratrons in industrial electronics function as
D. SCS refers to ____________. A. four terminal multi-directional switch
A. a gas-filled diode B. two terminal bi-directional switch
299. In a UJT maximum value of B. a vacuum tube C. two terminal unidirectional switch
charging resistance is associated with: C. gas-filled triode D. three terminal bi-directional switch
A. Peak point D. an electron triode
B. Valley point 314. Which of the trigger diodes has the
C. Any point between peak and valley 307. An electronic switch that has the highest holding voltage?
point highest single-device current capacity A. bidirectional-trigger diac
D. After the valley point and can withstand overloads better. B. bidirectional-diode-thyristor diac
A. Thyristors C. Shockley diode
300. When the firing angle of SCR is B. ignitrons D. thyrector
increased, its output C. SCR
A. decreases D. triac
B. increases
C. remains unchanged
D. doubles
315. General term of electronic devices
used to control or trigger large-power
switching devices.
A. thyristor
B. thyrector
C. break-over devices
D. triggering devices
316. A break-over device that is
basically a diode.
A. thyristor
B. thyrector
C. thyratron
D. triggering diode
317. A four-element solid state device
that combi9nes the characteristics of
both diodes and transistors
A. varactor
B. zener diode
C. tunnel diode
D. SCR
318. The most popular thyristor used in
electrical power controllers
A. SCR
B. triac
C. SCS
D. PUT
319. Find the two stable operating
conditions of an SCR.
A. Conducting and non-conducting
B. Oscillating and quiescent
C. NPN conduction and PNP
conduction
D. Forward conducting and reverse
conducting
320. How do you stop conduction during
which SCR is also conducting?
A. remove voltage gate
B. increase cathode voltage
C. interrupt anode current
D. reduce gate current
321. How do we turn “ON” or trigger an
SCR?
A. by making the gate (G) positive with
respect to its cathode (K)
B. by making the gate (G) positive with
respect to its anode (A)
C. by making the cathode more positive
with respect to the anode
D. A and C above
322. What is true about SCRs after they
are being switched “ON”?
A. The anode (A) to cathode (K)
continues to conduct even if the gate
triggering voltage is removed.
B. The gate (G) must be provided with
the required holding current to continue
its conduction.
C. A small holding voltage at the gate is
required for a continuous conduction.
D. B and C above
323. The voltage across the anode (A)
and cathode (K) terminals of an SCR
when conducting.
A. holding voltage
B. breakdown voltage
C. breakback voltage
D. trigger voltage
324. The minimum amount of current
needed for an SCR to conduct
continuously.
A. holding current
B. triggering current
C. threshold current
D. average sustaining current
325. What is(are) the condition(s) in
triggering SCR?
A. The gate voltage must be equal to or
greater than the triggering voltage.
B. The gate current must be equal to or
greater than the triggering current.
C. The anode (A) must be positive with
respect to the cathode.
D. all of the above
326. The voltage decreased across the
anode (A) and cathode (K) of an SCR
from non-conducting state to conducting
state.
A. holding voltage
B. forward breakdown voltage
C. triggering voltage
D. breakback voltage
327. An SCR rated 10 A is used as the
controlling switch in a circuit powered by
50Vdc. When the SCR fires ON, its
anode (A) to cathode (K) voltage was
observed to be 2 V. Calculate the
breakback voltage of the SCR.
A. 25 Vdc
B. 32 Vdc
C. 41 Vdc
D. 48 Vdc
328. The needed voltage at the gate of
an SCR before it conducts.
A. minimum-gate trigger voltage
B. maximum-gate trigger voltage
C. minimum-gate peak-inverse voltage
D. maximum-gate peak-inverse voltage
329. What is(are) the gate limitation(s)
of SCRs and triacs?
A. maximum-gate power dissipation
B. maximum-gate peak-inverse voltage
C. maximum-gate trigger current and
voltage
D. all of the above
330. How can we extend the rating of
SCRs?
A. by external cooling
B. by external circuitry
C. by connecting them in series/parallel
D. all of the above
331. Use of heat sinks, forced air, and
water cooling are examples of external
cooling in SCRs and other devices.
Which of these is the only
recommended to be used for the largest
power dissipating device?
A. metal heat sinks
B. forced air
C. water cooling
D. A and B above
332. How can we increase the forward-
voltage blocking capability of SCRs?
A. by connecting them in series
B. by connecting them in parallel
C. by cascading them
D. by connecting back to back in
parallel
333. In connecting two SCRs in series,
during “OFF” state, the voltage source
must be properly shared between them,
but due to devices’ differences, there
might be unequal voltages across each
SCR. How do we equalize these
voltages?
A. by installing a snubber circuit
B. by adding a gate-to-cathode resistor
C. by shunting a capacitor across the
anode (A) and cathode (K) of each SCR
D. by using a blocking-equalizing
resistor
334. What is true regarding blocking-
equalizing resistors in SCRs connected
in series?
A. Blocking-equalizing resistors are
shunted across each SCR.
B. The value of these resistors is about
10% of the value of the blocking
resistance of the SCR it is shunted with.
C. These resistors increases the
leakage current towards the load.
D. All of the above
335. A circuit used for voltage
equalization during ON-OFF switching
action of SCRs in series.
A. snubber circuit
B. crow-bar
C. clipper
D. clamper
336. When a high current is needed,
SCRs are connected in parallel. The
problem with paralleled SCRs is, when
they are not perfectly matched, one will
conduct first before the other and
carries the full-load current that is for
sure greater than its maximum rating.
To avoid this situation, both SCRs
should be turned ON at the same time.
How can we do this?
A. By using high triggering gate voltage
B. by using a gate-triggering
transformer
C. by using reactors
D. all of the above are possible
337. In controlling electrical power using
phase control method with SCR/triac
being the active device, what do we call
the period of the cycle before the device
switches to conduction?
A. trigger time
B. trigger delay time
C. firing frequency
D. firing delay angle
338. How many times per second does
an SCR is turned ON and OFF when it
is operated in a full-wave phase control
at a line frequency of 60 Hz?
A. 30 times
B. 60 times (HV)
C. 90 times
D. 120 times (FW)
339. A three terminal device that
behaves roughly like SCR, except that it
can conduct current in either direction
when at ON.
A. thyristor
B. SUS
C. SBS
D. GTO
340. What is the difference between a
triac and a silicon bilateral switch
(SBS)?
A. An SBS is usually used as breakover
device, while a triac is a load controlling
device.
B. An SBS is for low voltage
applications, while a triac is generally
for high voltage applications.
C. An SBS has better and stable
symmetrical-firing voltage than a triac.
D. all of the above
341. A triac can be triggered ON by the
application of a
A. positive voltage at the gate with
respect to MT1
B. negative voltage at the gate with
respect to MT1
C. positive or negative gate voltage with
respect to MT2
D. all of the above are correct
342. Which are the three terminals of a
TRIAC?
A. Gate, anode 1 and anode 2
B. Gate, source and sink
C. Base, emitter and collector
D. Emitter, base 1 and base 2
343. What are the three terminals of a
triac?
A. anode 1 (A1), anode 2 (A2) and gate
(G)
B. mainterminal 1 (MT1), mainterminal 2
(MT2), and gate (G)
C. anode (A), cathode (K) and gate (G)
D. both A and B are acceptable
344. A silicon bilateral switch may be
considered as s small power triac, and
has three terminals namely,
A. anode 1 (A1), anode 2 (A2) and gate
(G)
B. mainterminal 1 (MT1), mainterminal 2
(MT2), and gate (G)
C. anode (A), cathode (K) and gate (G)
D. both A and B are acceptable
345. A thyristor that is very similar to an
SCR except that it has low voltage and
current ratings. It is very temperature
stable, and is therefore suitable to be
used as triggering device.
A. UJT
B. GTO
C. SBS
D. SUS
346. Silicon unilateral switches (SUSs)
generally have a breakover voltage of 8
V, however, this value can be altered by
normally connecting a zener diode. How
is the diode installed?
A. across the gate (G) and cathode (K)
terminals, with the diode’s anode at the
gate
B. anode to anode, cathode to cathode
C. diode’s cathode to SUS’s anode and
diode’s anode to SUS’s cathode
D. diode’s cathode to SUS’s gate and
diode’s anode to SUS’s cathode
347. A silicon unilateral switch (SUS)
has a forward breakover voltage of 8 V.
a zener diode is connected between its
gate and cathode terminals with the
diode’s cathode at SUS’s gate. If the
zener voltage is 3.9 V, what is the new
forward breakover voltage of the
device?
A. 0.49 V
B. 2.05 V
C. 4.50 V
D. 11.9 V
348. Thyristor whose characteristic
curve closely resembles that of SCR’s
and SUS’s, except that its forward
breakover voltage (+VBO) is not
alterable, for the device has no gate
terminal.
A. diac
B. thyrector
C. UJT
D. Shockley diode
349. What will happen to the forward
breakdown or breakover voltage of
SCRs and triacs if the gate current is
increased?
A. will decrease
B. will also increase
C. will not change
D. will either increase or decrease, it
depends on their current coefficient
350. A UJT or unijunction transistor is a
three terminal breakover-type switching
device. Its three terminals are called
base 1, base 2, and emitter. Though
this is a transistor and has base and
emitter terminals, this operates very
different from a BJT and is not used as
a linear amplifier. Its applications are for
A. timers and oscillators
B. signal generators
C. triggering control for SCRs and triacs
D. all of the above