N-Channel Enhancement Mode Field P2610ADG

NIKO-SEM Effect Transistor TO-252

Halogen-Free & Lead-Free

D
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID 1. GATE
G 2. DRAIN
100V 26mΩ 50A 3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
TC = 25 °C 50
Continuous Drain Current ID
TC = 100 °C 35.5
A
1
Pulsed Drain Current IDM 150
Avalanche Current IAS 53 A
Avalanche Energy L = 0.1mH EAS 140 mJ
TC = 25 °C 128
Power Dissipation PD W
TC = 100 °C 51
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RJC 0.97
°C / W
Junction-to-Ambient RJA 62.5
1
Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T J = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.7 2.5 3.4
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 80V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS A
VDS = 80V, VGS = 0V, TJ = 125 °C 10
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 150 A

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 N-Channel Enhancement Mode Field P2610ADG
NIKO-SEM Effect Transistor TO-252
Halogen-Free & Lead-Free

Drain-Source-On-State
1 RDS(ON) VGS = 10V, ID = 25A 21 26 mΩ
Resistance
Forward Transconductance1 gfs VDS = 40V, ID = 25A 38 S
DYNAMIC
Input Capacitance Ciss 5000
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 285 pF
Reverse Transfer Capacitance Crss 189
2
Total Gate Charge Qg 80
2
VDS =80V, VGS = 10V,
Gate-Source Charge Qgs 28 nC
ID = 27.5A
Gate-Drain Charge2 Qgd 23
Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 2 Ω
Turn-On Delay Time2 td(on) 25
Rise Time2 tr VDD = 50V, ID  25A, 250
nS
Turn-Off Delay Time2 td(off) VGS = 10V, RGS = 25Ω 110
Fall Time2 tf 140
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C)
Continuous Current IS 50 A
1
Forward Voltage VSD IF = 25A, VGS = 0V 1.5 V
Reverse Recovery Time trr 100 nS
IF = 25A, dlF/dt = 100A / S
Reverse Recovery Charge Qrr 380 nC
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2％.
2
Independent of operating temperature.

REMARK: THE PRODUCT MARKED WITH “P2610ADG”, DATE CODE or LOT #

REV 1.3 Nov-25-2009

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 N-Channel Enhancement Mode Field P2610ADG
NIKO-SEM Effect Transistor TO-252
Halogen-Free & Lead-Free

Output Characteristics Transfer Characteristics

30 VDS= 25V
120
V GS = 10V
ID, Drain-To-Source Current(A)

25

ID, Drain-To-Source Current(A)

100
V GS = 7V
20
80

VGS = 6.5V
15
60
Tj=125°C
10
40
Tj=25°C Tj=-20°C
V GS = 5.5V 5
20

VGS = 4.8V 0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
0 2 4 6 8 10
VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)
Normalized On-Resistance Vs.Temperature Capacitance-Characteristics
6.00E+03
3.0
ID= 25A
Drain-to-Source On Resistance

Ciss
5.00E+03
RDS(ON), Normalized

2.5

4.00E+03
C, Capacitance(pF)

2.0

1.5 3.00E+03

1.0 2.00E+03

0.5 1.00E+03

Coss
VGS= 10V Crss
0.0 0.00E+00
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25 30

TJ , Junction Temperature(° C) VDS, Drain-to-Source Voltage(V)

Typical Source-Drain Diode Forward Voltage

10
1000
VGS, Gate-to-Source Voltage(V)

8
ISD, Rrverse Drain Current(A)

ID=27.5A
100
V DS=50V
TJ=150° C
6

10

TJ=25° C
1
2

VGS = 0V
0 0.1
0.0 0.3 0.6 0.9 1.2 1.5 1.8
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge (nC) V SD, Source-to-Drain Voltage(V)

REV 1.3 Nov-25-2009

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 N-Channel Enhancement Mode Field P2610ADG
NIKO-SEM Effect Transistor TO-252
Halogen-Free & Lead-Free

Safe Operating Area Single Pulse Maximum Power

1000 3000
Dissipation
Operation in This Area 2500
SINGLE PULSE
is Limite d by RDS(ON) RθJc = 0.97˚ C/W
Tc=25˚ C
↓
ID , Drain Current(A)

2000

Power(W)
100

100us
1500

1ms 1000
10
NOTE :
1.V GS= 10V
10ms 500
2.Tc=25˚ C
3.RθJc = 0.97˚ C/W
4.Single Pulse
100ms
0
DC
1 0.0001 0.001 0.01 0.1 1 10
1 10 100 1000
Single Pulse Time(s)
VDS, Drain-To-Source Voltage(V)

T r a n s ie n t T h e rm a l R e s p o n s e C u rv e
0
10
D = 0 .5
r(t),Thermal Response

※ N o te :
0 .2 1. D u ty F a c to r , D = t 1 / t 2
2. T J - T C = P *Z θ JC ( t)
-1
0 .1 3. Z θ J C ( t)= r ( t) * R θ J C
10 4. R θ J C = 0 .9 7 C /W M a x
0 .0 5

0 .0 2 P DM
0 .0 1
t1
s in g le p u ls e
-2 t2
10

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 ,S q u a re W a v e P u ls e D u ra tio n [s e c ]

REV 1.3 Nov-25-2009

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 N-Channel Enhancement Mode Field P2610ADG
NIKO-SEM Effect Transistor TO-252
Halogen-Free & Lead-Free

REV 1.3 Nov-25-2009

5
 N-Channel Enhancement Mode Field P2610ADG
NIKO-SEM Effect Transistor TO-252
Halogen-Free & Lead-Free

REV 1.3 Nov-25-2009

6