2004 Catalog

1
Advanced Power Technology
Technology… Beginning in 1984 with the introduction of Power MOS IV®, APT has maintained a
position at the forefront of power semiconductor technology. Our focus is on the high voltage, high
power and high performance segments of this market. Our commitment is to maintain and enhance
this position as a technological leader in MOS controlled devices and Diodes and to deliver products
which contribute to our customers’ success in delivering higher performance power systems.
Service… Outstanding technology is only part of the story. A global network of stocking distributors,
representatives, applications engineers, and web tools are in place to support all phases of your
product design, evaluation and procurement activities. In a world which demands superior execution,
we’ve won numerous awards as a service leader.
Quality… Our commitment is to excellence in all things we do. Whether you are evaluating the
quality of our products, our technical assistance, our customer service or the quality of our internal
communications systems, excellence is our standard. Continuous improvement is fundamental to
our business!
CONTENTS
HIGH VOLTAGE SMPS TRANSISTORS Page No.

IGBTs (Insulated Gate Bipolar Transistors) ...............................................4-6
Low Loss High Performance Power MOS 7® MOSFETs ..............................7-9
Standard Power MOS V® MOSFETs ........................................................ 10-12
COOLMOSTM MOSFETs ............................................................................... 12
DIODES
Silicon Carbide (SiC) Schottky Diodes ....................................................... 13
Fast Recovery Epitaxial Diodes (FREDs) ................................................14-16
High Voltage Schottky Diodes .................................................................... 16
HIGH VOLTAGE LINEAR MOSFETs ..........................................................17
CUSTOM PRODUCTS ..............................................................................17
HERMETIC AND HI-REL PRODUCTS ......................................................17
DIE PRODUCTS .......................................................................................17
POWER MODULES
IGBTs (Insulated Gate Bipolar Transistors) .........................................19-25
MOSFETs ................................................................................................ 26-31
Diodes ........................................................................................................ 31
Custom ....................................................................................................... 32
PACKAGE OUTLINE DRAWINGS ........................................................33-35
“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG.

“COOLMOS” is a trademark of Infineon Technologies AG”
A Full Line-Up of the very best
in High Voltage, High Power,
High Performance Transistors
for Your SMPS Applications
up to 200 kHz NPT Type Conventional Super Junction

Product Type PT Type IGBTs MOSFETs MOSFETs
IGBTs
• Fast–50 kHz Max • Power MOS V

Product Family • COOLMOS™
• • Thunderbolt® •
–100 kHz Max
Our fastest IGBTs Short circuit rated Best-in-class for Lowest specific on-
that can replace IGBTs for on-resistance, gate resitance of any
MOSFETs in many moderate to high charge and noise MOSFETs
Description high frequency frequency SMPS, immunity
SMPS applications UPS, and motor
including soft drive applications
switching
Blocking Voltage, volts 300, 600, 900, 1200 600, 1200 100-1400 600, 800
Fast Anti-Parallel Add APT FRED &

Combi Combi FREDFET
Diode Operation series Schottky
Metal Gate/Planar
Stripe
YES YES
Poly Gate/Planar Cell
YES YES
Design Tools available at www.advancedpower.com
• Transistor Quick Pick web tool to choose the right transistor for your application
• Application Notes - Examples Include:
- IGBT, MOSFET, and Diode Tutorial
- Parallel Connection of Power Electronic Devices
- Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
- Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced
Failures in SMPS Circuits
3
Insulated Gate Bipolar Transistors (IGBTs)
The IGBT (Insulated Gate Bipolar Transistor) is the combination Higher Threshold Voltage and Reduced “Miller Capacitance”…
of a MOSFET and a Bipolar Transistor in a single chip and as this provides for increased noise and spurious turn-on immunity and
such combines the best attributes of each type of transistor... The eliminates the need for a negative gate voltage supply for turn-off.
Bipolar Transistor attributes portion allows operation at high This eliminates the need for an auxiliary power supply and simplifies
on-state current densities with a low on-state voltage drop and the the use of gate driver ICs.
MOSFET structure attributes allows for ease of gate control. The
IGBT advantage in current density over MOSFETs facilitates higher Low On-State Voltage… conduction losses are dramatically lower,
output power at equal chip size, provides for smaller and lower especially at high temperatures and high currents. Conduction
cost components, and allows for smaller more compact and higher losses at operating currents and temperatures are ~1/8 that of a
power density designs. The die size for the IGBT is often 1 or 2 die conventional MOSFET and ~1/3 that of a superjunction MOSFET.
sizes smaller than a MOSFET at equal current solution which means
lower cost than MOSFETs. Low Gate Charge… this reduces gate drive power losses and
enables fast switching.
The characteristics of the IGBT are determined by the technology
used (materials, process, design). IGBTs can generally be classified Low Thermal Resistance… this maximizes power dissipation
into two basic technologies PT (Punch Through) and NPT (Non- capabilities or lowers junction temperature for improved
Punch Through). reliability.
There are 3 APT Product Families of IGBTs: Short Tail Current Ideal for Soft Switching…
PT 1) Power MOS 7® PT IGBT Family… These devices are
available in 300, 600, 900, and 1200 volt for operation up Combis… POWER MOS 7® IGBTs are available co-packaged
to 200 kHz hard switching. with a fast-recovery, antiparallel diode optimized for low reverse
NPT 2) Thunderbolt® NPT IGBT Family… 600 volt only, these recovery charge, further enhancing performance in power switching
devices are capable of operation 100 kHz Max in applications. Co-packaging the POWER MOS 7® IGBTs with these
hard switching applications. rectifiers reduces EMI, switching losses, and conduction losses, while
3) Fast NPT IGBT Family… 600 and 1200 volt devices, reducing component count and cost.
designed for operation 50 kHz Max in hard switching
applications. Low Switching Energies… this enables very low switching losses.
In combination with the low conduction losses and the low
For soft switching topologies these maximum operating frequencies thermal resistance, new levels of high frequency capability for a
will be higher. given current are achieved. Data sheets now include a graph of
frequency vs. current for an IGBT Combi. This graph comprehends
IGBT products offered by APT utilize offers both NPT and PT both conduction and switching losses and allows the designer to
technologies to cover the widest range of applications and design properly select the best device for the application.
requirements. They IGBTs can be used as a cost effective alternative
to MOSFETs in many applications with high efficiency, improved SiC Combi’s.. Power MOS 7® IGBTs are now available co-packaged
power density, and lower cost. with SiC schottky diodes for the ultimate in performance. Switching
energies are up to 50% lower for the SiC/IGBT combi than those
POWER MOS 7® IGBTs parts using conventional Si diodes.
Our latest generation of 300, 600, 900, and 1200 volt PT-
Type IGBTs utilizing our advanced proprietary POWER MOS 7® In many applications these IGBTs can be used in moderate to high
Technology. The 300V parts are designed to replace 200-300V frequency SMPS applications. Also, the NPT technology has some
MOSFETs in PDP and alternative energy inverters. The 600 volt added benefits over the PT type IGBTs.
IGBTs are designed to replace 500V/600V MOSFETs, the 900 volt
IGBTs to replace 800 volt MOSFETs, and the 1200 volt IGBTs are
THUNDERBOLT® & FAST IGBTs
designed to replace 1000V/1200V MOSFETs in switch mode power Features and Benefits of NPT IGBTs
supply (SMPS), power factor correction (PFC), and other high-power Ruggedness… NPT Technology is more rugged due to the wider
applications. For all IGBT’s, the gate-drive voltage requirement is base and lower gain of the PNP bipolar transistor. APT NPT IGBTs
similar to a MOSFET. This allows larger die size power MOSFETs, or are short circuit, avalanche energy, and RBSOA rated while PT
multiple MOSFETs in parallel to be replaced with just one POWER POWER MOS 7® IGBTs with higher switching frequency capability
MOS 7® IGBT. are RBSOA rated.
Features and Benefits of POWER MOS 7® Technology IGBTs Paralleling… This is easier with NPT technology due to the positive
Metal Gate… these IGBTs utilize a proprietary planar stripe metal temperature coefficient of VCE(ON) similar to a MOSFET. PT POWER
gate design providing internal chip gate resistance one to two orders MOS 7® IGBTs from APT have a slightly negative temperature
of magnitude lower than comparable industry standard polysilicon coefficient and can be paralleled but may require added precautions,
gate devices. This enables very uniform and fast switching across the such as careful thermal matching or VCE(ON) sorting.
entire chip with uniform heat distribution. The metal gate minimizes
chip gate resistance variation from batch to batch providing the user High Temperature Operation…
with more consistent switching performance. In addition, the low NPT - The turn-off speed and switching losses remain relatively
chip gate resistance allows the designer maximum range of switching constant over the entire operating temperature range.
speed and increases the immunity to dv/dt induced turn-on. PT - The turn-off speed and switching losses increase with
temperature, but are extremely low due to the short tail current.
4
NEW! Up To 200 kHz Insulated Gate Bipolar Transistors (IGBTs)
BVCES VCE(ON) IC2 Package
Volts 25OC (Typ) 100 - 110o C Part Number Style
POWER MOS 7® SINGLE

1200 3.3 20 APT13GP120K
• PT Technology 900 3.2 21 APT15GP90K TO-220
600 2.2 27 APT15GP60K
2.2 20 APT11GP60K TO-220[K]
• Ultralow Gate
300 1.6 32 APT32GU30K
Resistance and
Charge 1200 3.3 20 APT13GP120B
3.3 33 APT25GP120B
• Highest 3.3 46 APT35GP120B
Frequency IGBTs 3.3 54 APT45GP120B
900 3.2 21 APT15GP90B TO-247
• Ultralow 3.2 36 APT25GP90B
Switching Losses 3.2 50 APT40GP90B
600 2.2 27 APT15GP60B
2.2 49 APT30GP60B
• Hard and Soft TO-247[B]
2.2 62 APT40GP60B
Switching 2.2 72 APT50GP60B
300 1.6 32 APT32GU30B
• Low Cost 1.6 60 APT60GU30B
Alternative to 1.6 83 APT83GU30B
MOSFETs
1200 3.3 91 APT75GP120B2
• Excellent Noise 600 2.2 96 APT65GP60B2 T-MAXTM
Immunity 2.2 100 APT80GP60B2
1200 3.3 29 APT35GP120J

• Single Supply
3.3 34 APT45GP120J
Gate Drive 3.3 57 APT75GP120J T-MAX™[B2]
900 3.2 32 APT40GP90J ISOTOP®
• Combi with High 600 2.2 40 APT40GP60J
Speed Diode 2.2 46 APT50GP60J
2.2 60 APT65GP60J
2.2 68 APT80GP60J
Combi (IGBT & “DF Series” FRED)
1200 3.3 20 APT13GP120BDF1
3.3 33 APT25GP120BDF1
900 3.2 21 APT15GP90BDF1 TO-247
3.2 36 APT25GP90BDF1
600 2.2 27 APT15GP60BDF1
2.2 49 APT30GP60BDF1
1200 3.3 46 APT35GP120B2DF2 264-MAX TM[L2]

3.3 54 APT45GP120B2DF2 T-MAXTM
900 3.2 50 APT40GP90B2DF2
600 2.2 62 APT40GP60B2DF2
2.2 72 APT50GP60B2DF2
600 2.2 96 APT65GP60L2DF2 264-MAXTM
1200 3.3 29 APT35GP120JDF2

3.3 34 APT45GP120JDF2
3.3 57 APT75GP120JDF3
900 3.2 32 APT40GP90JDF2
600 2.2 31 APT30GP60JDF1 ISOTOP® ISOTOP®[J]
2.2 40 APT40GP60JDF1 SOT-227
2.2 46 APT50GP60JDF2
C
COMBI (IGBT & SILICON CARBIDE SCHOTTKY DIODE )
1200 3.3 20 APT13GP120BSC G
600 2.0 15 APT15GT60BSC TO-247
2.2 27 APT15GP60BSC E
2.2 49 APT30GP60BSC
5
Insulated Gate Bipolar Transistors (IGBTs)
BVCES VCE(ON) IC2 Package
Volts 25OC (Typ) 90-110o C Part Number Style
THUNDERBOLT® SINGLE
600 2.0 8 APT8GT60KR
2.0 12 APT12GT60KR
100 kHz Max 2.0 15 APT15GT60KR TO-220
• NPT Technology 1.75 20 APT20GT60KR
2.0 30 APT30GT60KR TO-220[K]
• Short Circuit 600 2.0 12 APT12GT60BR
Rated
2.0 15 APT15GT60BR
2.0 20 APT20GT60BR TO-247
• Moderate to High
2.0 30 APT30GT60BR
Frequency
2.15 40 APT40GT60BR
• Easy Paralleling 2.2 60 APT60GT60BR
600 2.0 60 APT60GT60JR ISOTOP®
• Single Supply
Combi (IGBT & “D” Series FRED)
Gate Drive
600 2.0 15 APT15GT60BRD TO-247 TO-247[B]
• Combi with low 2.0 30 APT30GT60BRD
VF Diode 600 2.0 60 APT60GT60JRD ISOTOP®
FAST SINGLE
1200 2.5 11 APT11GF120KR TO-220
2.7 20 APT20GF120KR
50 kHz Max
1200 2.7 20 APT20GF120BR
• NPT Technology 2.7 33 APT33GF120BR TO-247
• Short Circuit 600 2.1 50 APT50GF60BR

Rated 1200 2.9 50 APT50GF120B2R T-MAXTM T-MAX™[B2]
• Low to Moderate 600 1.6 100 APT100GF60B2R

Frequency
1200 3.5 50 APT50GF120LR TO-264
• Lowest 600 1.6 100 APT100GF60LR
Conduction Loss
600 1.6 100 APT100GF60JR ISOTOP®
• Easy Paralleling Combi (IGBT & “D” Series FRED)
1200 2.5 11 APT11GF120BRD1 TO-247
• Single Supply 2.7 20 APT20GF120BRD
Gate Drive
1200 2.7 33 APT33GF120B2RD T-MAXTM
• Combi with low
600 2.1 50 APT50GF60B2RD TO-264[L]
VF Diode
1200 2.7 33 APT33GF120LRD TO-264
600 2.1 50 APT50GF60LRD
1200 2.9 40 APT40GF120JRD
2.9 50 APT50GF120JRD ISOTOP®
2.1 60 APT60GF120JRD
600 1.6 100 APT100GF60JRD
ISOTOP®[J]
SOT-227
G
E
6
Power MOS 7® MOSFETs / FREDFETs
Our latest generation of conventional MOSFETs with the lowest 550 AND 1100 VOLT PRODUCTS for added voltage headroom to
on-resistance, gate charge, and total losses for a given footprint. .... reduce SEB failures and minimize conduction loss tradeoff. Ideal for
Designed to meet the most advanced SMPS design requirements for higher power designs of existing converter topologies where increased
higher reliability, power density, and efficiency, this new generation field failure rates are a concern and for existing topologies and power
of MOSFETs dramatically lowers the two largest contributors of levels where converter field failure rates need to be reduced.
power losses in SMPS applications....
Two families of POWER MOS 7® MOSFETs are offered:
LOW CONDUCTION LOSSES… MOSFETs–for applications not utilizing the intrinsic
On-Resistance (RDS(ON)) has been lowered by up to 30% and thermal body drain diode
resistance lowered by up to 10% for any given chip size.
FREDFETs–for applications utilizing the intrinsic body
LOW SWITCHING LOSSES… drain diode. These MOSFETs have the body drain diode
Combining ultra low gate charge and our proprietary aluminum optimized for fast reverse recovery time (trr) and improved
metal gate structure results in a MOSFET capable of extremely fast commutating dv/dt capability by special silicon lifetime
switching and very low switching losses. Total gate charge (Qg) and control processes.
“Miller” gate charge (Qgd) have been reduced by up to 60%. Like
all APT Power MOSFETs, Power MOS 7® utilizes a low resistance APT POWER MOS 7® FREDFETs have all the improved features and
aluminum metal gate structure. This allows for faster gate signal benefits of APT POWER MOS 7® MOSFETs and in addition…
propagation than is possible with conventional polysilicon gate
structures. In addition, Power MOS 7® employs new gate design • Faster Intrinsic Diode Reverse Recovery…The reverse
layouts for extremely low internal chip equivalent gate resistances recovery time (trr) has been reduced thereby eliminating
(EGR) that are up to an order of magnitude lower than competitive the external FRED and Schottky rectifiers in certain circuit
devices and provides for very uniform switching across the entire configurations.
chip. This provides for faster switching speeds, up to 50% faster
than our previous generation of Power MOSFETs. • Improved Ruggedness… The ruggedness of the intrinsic
diode has also been improved, allowing for improved
THE RESULT… higher efficiency, and more power in less space. commutating dv/dt ratings.
The lowest power loss Figure of Merit (FOM) for conventional high
power MOSFETs in the industry - CUSTOM FREDFETS FOR HIGH TEMPERATURE OPERATION…
FOM = RDS(ON) X Qg The lifetime process utilized for the FREDFETs in this catalog is a
proven industry standard. In some designs there are requirements for
In addition, like all APT Power MOSFETs, Power MOS 7® improved high temperature device performance and this can be made
devices are extremely rugged… available using our proprietary platinum lifetime control process.
Our platinum process provides the high temperature advantages
AVALANCHE ENERGY RATED… All Power MOS 7® MOSFETs are of soft recovery, lower leakage current, and more temperature
100% tested and guaranteed for avalanche energy. independent performance.
HIGH GATE RUPTURE VOLTAGE… Thick high quality gate oxide APPLICATIONS FOR FREDFETs… Power MOS 7® FREDFETs should
allows for specification of ± 30V continuous operation and ± 40V be specified under the following conditions:
transient operation gate voltage.
• Whenever the intrinsic body drain diode of the MOSFET is expected
and Power MOS 7® provides industry leading spurious turn-on to carry forward current.
immunity…
• In soft switched circuits, where the body diode carries
HIGH NOISE IMMUNITY… Higher Gate Threshold voltage - Vgs(th), current.
3 volts minimum.
REDUCED SHOOT THROUGH SUSCEPTIBILITY…

i n c r e a s e d g a t e t h r e s h o l d vo l t a g e - V g s ( t h ) , u l t r a l ow
equivalent gate resistance (EGR) and high input capacitance
ratio (Q gs /Q gd ) results in an Industry leading high figure
of Merit (FOM) -
FOM = Vgs(th) X Qgs/Qgd
HIGH COMMUTATING dv/dt CAPABILITY… from defect

tolerant linear cell design and very low parasitic bipolar base
resistance.
7
BVDSS RDS(ON) ID(Cont) MOSFET P/N FREDFET P/N Package
Volts Ohms Amps (low trr MOSFET) Style
1200 4.700 3.5 --- APT1204R7KFLL

1000 3.000 4 APT1003RKLL APT1003RKFLL
TO-220[K]
1200 4.700 3.5 --- APT1204R7BFLL
1.400 9 --- APT1201R4BFLL
1.200 12 --- APT1201R2BFLL
1100 1.200 10 --- APT1101R2BFLL
1.000 13 --- APT1101RBFLL
1000 3.000 4 APT1003RBLL APT1003RBFLL
1.600 8 --- APT1001R6BFLL
0.900 12 APT10090BLL APT10090BFLL
0.780 14 APT10078BLL APT10078BFLL TO-247[B]
800 0.520 15 APT8052BLL APT8052BFLL

0.430 20 APT8043BLL APT8043BFLL
600 0.380 17 APT6038BLL APT6038BFLL
550 0.310 19 --- APT5531BFLL
0.230 24 --- APT5523BFLL D3 PAK[S]
0.180 31 --- APT5518BFLL TO-268
500 0.240 22 APT5024BLL APT5024BFLL

300 0.061 54 APT30M61BLL APT30M61BFLL Part Numbers for D3
0.075 44 APT30M75BLL APT30M75BFLL
packages - replace ”B” with
200 0.036 65 APT20M36BLL APT20M36BFLL “S” in part number
0.034 74 APT20M34BLL APT20M34BFLL
1200 0.670 18 --- APT12067B2FLL
0.570 22 --- APT12057B2FLL
1100 0.580 20 --- APT11058B2FLL
0.440 26 --- APT11044B2FLL
1000 0.450 23 APT10045B2LL APT10045B2FLL
0.350 28 APT10035B2LL APT10035B2FLL
800 0.240 31 APT8024B2LL APT8024B2FLL T-MAX™[B2]
0.200 38 APT8020B2LL APT8020B2FLL
600 0.170 35 APT6017B2LL APT6017B2FLL
0.130 43 APT6013B2LL APT6013B2FLL
0.100 54 APT6010B2LL APT6010B2FLL
550 0.130 41 --- APT5513B2FLL
0.100 49 --- APT5510B2FLL
0.085 59 --- APT55M85B2FLL
500 0.100 46 APT5010B2LL APT5010B2FLL
0.075 57 APT50M75B2LL APT50M75B2FLL
TO-264[L]
300 0.036 84 APT30M36B2LL APT30M36B2FLL
Part Numbers for TO-264
200 0.020 100 APT20M20B2LL APT20M20B2FLL
packages - replace”B2” with
“L” in part number
8
1200 0.400 30 --- APT12040L2FLL

1000 0.260 38 APT10026L2LL APT10026L2FLL
800 0.140 52 APT8014L2LL APT8014L2FLL
600 0.075 73 APT60M75L2LL APT60M75L2FLL
550 0.065 78 --- APT55M65L2FLL
264-MAX TM[L2]
500 0.050 89 APT50M50L2LL APT50M50L2FLL
1200 0.670 17 --- APT12067JFLL
0.570 19 --- APT12057JFLL
0.400 24 --- APT12040JFLL
0.310 30 --- APT12031JFLL
1100 0.580 18 --- APT11058JFLL
0.440 22 --- APT11044JFLL
0.260 30 --- APT11026JFLL
1000 0.450 21 APT10045JLL APT10045JFLL
0.350 25 APT10035JLL APT10035JFLL
0.260 30 APT10026JLL APT10026JFLL
0.210 37 APT10021JLL APT10021JFLL
800 0.240 29 APT8024JLL APT8024JFLL
0.200 33 APT8020JLL APT8020JFLL
600 0.170 31 APT6017JLL APT6017JFLL
0.075 58 APT60M75JLL APT60M75JFLL
550 0.130 35 --- APT5513JFLL
0.100 44 --- APT5510JFLL
0.085 51 --- APT55M85JFLL ISOTOP®[J]
0.065 63 --- APT55M65JFLL SOT-227
0.050 77 --- APT55M50JFLL (ISOLATED BASE)
500 0.100 44 APT5010JLL APT5010JFLL
300 0.036 76 APT30M36JLL APT30M36JFLL
200 0.020 104 APT20M20JLL APT20M20JFLL
MOSFET/FRED (“Combi Products”)

BVDSS RDS(ON) ID(Cont) BOOST
Volts Ohms Amps MOSFET P/N CONFIGURATION
500 0.100 44 APT5010JLLU2

0.075 51 APT50M75JLLU2
9
Power MOS V® MOSFETs / FREDFETs
Introduced in 1997 and designed to meet the most advanced APT POWER MOS V® FREDFETs have all the improved features and
SMPS design requirements for higher reliability, power density, benefits of APT POWER MOS V® MOSFETs and in addition…
and efficiency at that time, Power MOS V® can still provide the best
• Faster Intrinsic Diode Reverse Recovery .... The reverse recovery
trade-off between performance and cost in some applications. Like time (trr) has been reduced thereby eliminating the external FRED
all APT Power MOSFETs, Power MOS V® utilizes a low resistance and Schottky rectifiers in certain circuit configurations.
aluminum metal gate structure. This allows for faster gate signal
propagation than is possible with conventional polysilicon gate • Improved Ruggedness… The ruggedness of the intrinsic diode
structures. The result is extremely low internal chip equivalent gate has also been improved, allowing for improved commutating
resistances (EGR) that are up to an order of magnitude lower than dv/dt ratings.
competitive devices which enables uniform high speed switching
across the entire chip. CUSTOM FREDFETS FOR HIGH TEMPERATURE OPERATION…
Two families of POWER MOS V® MOSFETs are offered: The lifetime process utilized for the FREDFETs in this catalog is a
proven industry standard. In some designs there are requirements for
• MOSFETs – for applications not utilizing the intrinsic body improved high temperature device performance and this can be made
drain diode available using our proprietary platinum lifetime control process.
Our platinum process provides the high temperature advantages
• FREDFETs - for applications utilizing the intrinsic body drain of soft recovery, lower leakage current, and more temperature
diode. These MOSFETs have the body drain diode optimized for independent performance.
fast reverse recovery time (trr) and improved commutating dv/dt
capability by special silicon lifetime control processes. APPLICATIONS FOR FREDFETS… Power MOS V® FREDFETs should
be specified under the following conditions:
• Whenever the intrinsic body drain diode of the MOSFET is
expected to carry forward current.
• In soft switched circuits, where the body diode carries

current.

1200 1.600 8 --- APT1201R6BVFR

1.500 10 --- APT1201R5BVFR
1000 1.000 11 APT1001RBVR APT1001RBVFR
0.860 13 APT10086BVR APT10086BVFR
800 0.750 12 APT8075BVR APT8075BVFR

0.650 13 APT8065BVR APT8065BVFR
0.560 16 APT8056BVR APT8056BVFR TO-247[B]
600 0.400 16 APT6040BVR APT6040BVFR
500 0.280 20 APT5028BVR APT5028BVFR

0.200 26 APT5020BVR APT5020BVFR D3 PAK[S]
0.170 30 APT5017BVR APT5017BVFR TO-268
Part Numbers for D3

packages - replace ”B”
with “S” in part number
10
400 0.200 23 --- APT4020BVFR

0.160 27 --- APT4016BVFR
0.140 28 --- APT4014BVFR
0.120 37 --- APT4012BVFR
300 0.085 40 APT30M85BVR APT30M85BVFR TO-247[B] D3 PAK[S]
0.070 48 APT30M70BVR APT30M70BVFR
200 0.045 56 APT20M45BVR APT20M45BVFR
0.040 59 APT20M40BVR APT20M40BVFR Part Numbers for D3
0.038 67 APT20M38BVR APT20M38BVFR packages - replace ”B”
100 0.025 75 APT10M25BVR APT10M25BVFR with “S” in part number
0.019 75 APT10M19BVR APT10M19BVFR
1200 0.800 16 --- APT12080B2VFR
0.600 20 --- APT12060B2VFR
1000 0.500 21 APT10050B2VR APT10050B2VFR
0.400 26 APT10040B2VR APT10040B2VFR
800 0.300 27 APT8030B2VR APT8030B2VFR
0.240 33 APT8024B2VR APT8024B2VFR
T-MAX™[B2]
600 0.200 30 APT6020B2VR APT6020B2VFR
0.150 38 APT6015B2VR APT6015B2VFR
0.110 49 APT6011B2VR APT6011B2VFR
500 0.140 37 APT5014B2VR APT5014B2VFR
0.100 47 APT5010B2VR APT5010B2VFR
0.085 56 APT50M85B2VR APT50M85B2VFR TO-264[L]
0.080 58 APT50M80B2VR APT50M80B2VFR
400 0.070 57 --- APT40M70B2VFR
300 0.040 76 APT30M40B2VR APT30M40B2VFR Part Numbers for TO-264
packages - replace”B2” with
200 0.022 100 APT20M22B2VR APT20M22B2VFR
0.018 100 APT20M18B2VR APT20M18B2VFR “L” in part number
100 0.011 100 --- APT10M11B2VFR
0.009 100 --- APT10M11B2VFR
1200 0.450 26 --- APT12045L2VFR
1000 0.300 33 APT10030L2VR APT10030L2VFR
800 0.180 43 APT8018L2VR APT8018L2VFR
600 0.080 65 APT60M80L2VR APT60M80L2VFR 264-MAX TM[L2]
500 0.060 77 APT50M60L2VR APT50M60L2VFR
1400 0.500 23 --- APT14050JVFR
1200 0.800 15 --- APT12080JVFR
0.400 26 --- APT12040JVFR
1000 0.500 19 APT10050JVR APT10050JVFR
0.430 22 APT10043JVR APT10043JVFR
0.250 34 APT10025JVR APT10025JVFR
800 0.300 25 APT8030JVR APT8030JVFR
0.280 28 APT8028JVR APT8028JVFR
0.150 44 APT8015JVR APT8015JVFR
600 0.150 35 APT6015JVR APT6015JVFR ISOTOP®[J]
0.130 40 APT6013JVR APT6013JVFR SOT-227
0.075 62 APT60M75JVR APT60M75JVFR (ISOLATED BASE)
500 0.100 44 APT5010JVR APT5010JVFR
0.085 50 APT50M85JVR APT50M85JVFR
11
400 0.070 53 --- APT40M70JVFR

0.035 93 --- APT40M35JVFR
300 0.040 70 APT30M40JVR APT30M40JVFR
200 0.022 97 APT20M22JVR APT20M22JVFR
100 0.011 144 --- APT10M11JVFR
0.007 225 --- APT10M07JVFR
ISOTOP®[J]
MOSFET/FRED (“Combi Products”) SOT-227
BVDSS RDS(ON) ID(Cont) (ISOLATED BASE)
Volts Ohms Amps MOSFET P/N CONFIGURATION
500 0.100 44 APT5010JVRU2 Boost (U2)

0.100 44 APT5010JVRU3
Buck (U3)
COOLMOS MOSFETs TM
BVDSS RDS(ON) ID(Cont) Package

Volts Ohms Amps MOSFET P/N Style
800 0.450 11 APT11N80KC3 TO-220

TO-220[K] D3 PAK[S]
TO-268
800 0.450 11 APT11N80BC3
0.290 17 APT17N80BC3 TO-247
600 0.190 21 APT20N60BC3
0.095 40 APT40N60BC3
0.070 47 APT47N60BC3
800 0.290 17 APT17N80SC3
TO-247[B] T-MAX™[B2]
600 0.190 20 APT20N60SC3 D3
0.070 47 APT47N60SC3
800 0.145 34 APT34N80B2C3 T-MAXTM

800 0.145 34 APT34N80LC3 TO-264
800 0.145 31 APT31N80JC3 ISOTOP®
600 0.035 77 APT77N60JC3 ISOTOP®[J]
SOT-227
TO-264[L] (ISOLATED BASE)
“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG.

“COOLMOS” is a trademark of Infineon Technologies AG”
12
NEW! Silicon Carbide Schottky Diodes
Reverse Recovery
Silicon Carbide (SiC) Schottky Diodes are the latest development in
high power diode technology. SiC offers superior dynamic and thermal
performance over conventional silicon power diodes. The SiC has
essentially no reverse recovery and stable switching characteristics over a
wide temperature range. With a 175oC TJ rating, positive VF temperature
coefficient, and extremely fast switching, enables designs with superior ZERO RECOVERY™
efficiencies and reduced size. When co-packaged with APT’s Power MOS7®
Current
IGBTs switching energies are up to 50% lower than those parts using Si
diodes.
APPLICATIONS -
• PFC and Forward Topologies Time
• Hard or Soft Switched Topologies
• High Frequency, High Performance
FEATURES BENEFITS
Switching Losses Nearly Eliminated -ZERO RECOVERY™

Schottky Barrier–Majority Carrier Only Greatly Reduced Turn-On Loss In Switch
Improved Overall Efficiency
Enables Higher Frequency Operation
Simplify or Eliminate Snubber Circuits
High Temperature Operation

Wide Energy Gap Low Leakage Current
Radiation Hardness
Low Resistance–High Power Density

High Breakdown Electric Field
High Termal Conductivity

High Pulse Capability Reliable High Power Operation
Positive VF Temperature Coefficient Thermally Stable Paralleling
ZERO RECOVERY™ is a trademark of Cree Inc.
IF VF (volts) Package
Volts Amps Typ 25OC Part Number Configuration Style
Silicon Carbide 5 1.6 APT5SC120K Single

1200 5 1.6 APT10SC120KCT Center Tap TO-220
• Custom
10 1.6 APT5SC120K Single
Configurations
Available
6 1.6 APT6SC60K Single
• Hermetic 6 1.6 APT6SC60KCT Center Tap
Packages
Available
10 1.6 APT10SC60K Single TO-220
600 10 1.6 APT10SC60KCT Center Tap
• See Page 5 for 20 1.6 APT20SC60K Single
SiC Combi’s 6 1.6 APT6SC60SA Single D-2
10 1.6 APT10SC60SA Single
13
Fast Recovery Epitaxial Diodes (FREDs)
Figure 1 below shows the typical tradeoff between reverse recovery Figure 2
switching times (trr) and forward voltage drop (VF) for a FRED – lower
switching times (faster switching speeds) result in higher forward
voltage drop. The specific process and design define the curve. A
critical part of the manufacturing process is the lifetime control – the
Current (A)
lower the material lifetime the lower the switching times (move left DS
and up the curve). For APT the lifetime control technique is a pro-
prietary platinum diffusion process – the more platinum the faster
the switching times. The reverse recovery times are directly related DF
to the reverse recovery charge. APT offers three families or “series” of
high performance FRED products which are represented by specific D
points on the trade off curve of Figure 1.
Time (ns)
Figure 1
Figure 2 shows a relative comparison of the reverse recovery
VF’ Forward Voltage Drop
waveforms for each of the 3 “series” of products.
DS Our proprietary platinum lifetime control process results

in performance advantages compared to FREDs built with
alternative processes for lifetime control:
DF
• High Temperature Capability - less degradation of performance
D at high temperatures allowing for increased maximum junction
temperature for safe operation. Junction temperature
maximum is 150 oC without concern for excessively high
DQ leakage currents and thermal runaway.
• Softer Recovery – to minimize EMI

Switching Time or Qrr {reverse recovery charge}
• Very Fast switching times (trr) along with extremely low reverse
recovery current (IRRM) and reverse recovery charge (Qrr) for a
given forward voltage (VF).
The “D” and “DS” series of FREDs are currently offered as

discrete products. The “DF” series FREDs are only offered in
the Power MOS 7® IGBT combis.
NEW!
Coming in 2nd Half of 2004: New DQ Series of FREDs
APT is pleased to announce the next step forward in FRED technology. The DQ series of products is optimized for continuous conduction
mode PFC and other hard switched high performance power supplies. Ultra low reverse recovery charge circumvents high power loss
in the PFC switch, enabling higher frequency operation for lower system cost. A well balanced tradeoff between forward voltage and
reverse characteristics result in low power loss in the diode as well. The DQ series diodes have very soft recovery under all operating
conditions, greatly reducing EMI and the losses and cost associated with filters and snubbers required with snappy diodes. High leakage
current that plagues some low recovery charge diodes is eliminated with APT’s proprietary platinum minority carrier life time control.
APT’s proprietary platinum processing results in superior temperature stability, enabling easy paralleling and safe operation up to the
175 oC rated maximum junction temperature.
The first DQ series products available will be 600 Volt followed by other voltages. The current ratings are 8, 15, 30, 60, and 100 Amperes.
These products will be available in all of the standard package configurations of APT’s existing D series FRED products.
14
“D” Series FREDs
IF VF (volts) trr(ns) Package
Volts Amps Typ 25OC Typ 25OC Part Number Style
1200 30 2.0 370 APT30D120B

60 2.0 400 APT60D120B
1000 30 1.9 300 APT30D100B
60 1.9 280 APT60D100B
600 15 1.6 80 APT15D60B
30 1.6 85 APT30D60B
60 1.6 130 APT60D60B TO-247[B] D3 PAK[S]
TO-268
400 30 1.3 32 APT30D40B
60 1.3 37 APT60D40B
Part Numbers for D3
300 60 1.2 38 APT60D30B packages - replace ”B”
200 30 1.1 24 APT30D20B with “S” in part number
60 1.1 31 APT60D20B
1200 15 2.0 260 APT15D120K
1000 15 1.9 260 APT15D100K
600 15 1.6 80 APT15D60K
TO-220[K]
400 15 1.3 35 APT15D40K
300 15 1.2 32 APT15D30K
1200 27 2.0 370 APT2X30D120J
53 2.0 400 APT2X60D120J
93 2.0 420 APT2X100D120J
1000 28 1.9 300 APT2X30D100J
55 1.9 280 APT2X60D100J
95 1.9 300 APT2X100D100J
600 30 1.6 85 APT2X30D60J ISOTOP®[J] SOT-227
60 1.6 130 APT2X60D60J Antiparallel
100 1.6 180 APT2X100D60J Configuration
(ISOLATED BASE)
400 30 1.3 32 APT2X30D40J
60 1.3 37 APT2X60D40J
100 1.3 50 APT2X100D40J
300 30 1.2 25 APT2X30D30J Part Numbers for Parallel
60 1.2 38 APT2X60D30J Configuration replace 30, 60,
100 1.2 47 APT2X100D30J or 100 with 31, 61, or 101.
200 30 1.1 24 APT2X30D20J
Example: 2X30D120J
60 1.1 31 APT2X60D20J
becomes 2X31D120J
100 1.1 60 APT2X100D20J
1200 15 2.0 260 APT15D120BCT
30 2.0 370 APT30D120BCT
1000 15 1.9 80 APT15D100BCT

30 1.9 85 APT30D100BCT
600 15 1.6 35 APT15D60BCT
30 1.6 32 APT30D60BCT
400 15 1.3 32 APT15D40BCT
30 1.3 25 APT30D40BCT
300 15 1.2 32 APT15D30BCT
30 1.2 25 APT30D30BCT TO-247[BCT]
*Common Cathode
200 15 1.1 41 APT15D20BCT
30 1.1 24 APT30D20BCT
* Current rating per leg for common cathode configuration

15
“D” Series FREDs
1000 60 1.9 280 APT60D100LCT

600 60 1.6 130 APT60D60LCT
TO-264[LCT]
400 60 1.3 37 APT60D40LCT *Common Cathode
300 60 1.2 38 APT60D30LCT
200 60 1.1 31 APT60D20LCT
1000 15 1.9 260 APT15D100BHB
TO-247[BHB]
30 1.9 300 APT30D100BHB Half Bridge
600 30 1.6 85 APT30D60BHB
1000 30 1.9 300 APT30D100BCA
TO-247[BCA]
600 15 1.6 80 APT15D60BCA Common Anode
30 1.6 85 APT30D60BCA
200 30 1.1 24 APT30D20BCA
“DS” Series FREDs Two - 300V FREDs in Series

600 30 4.0 20 APT30DS60B TO-247

15 4.5 12.5 APT15DS60B
Schottky Diodes Power supply designers can use these new schottky diodes to im-
prove cost, power density, and efficiency of their designs. Designs
These Schottky Diodes offer several dramatic improvements over with these schottky diodes can experience 10-15% lower losses than
currently used Fast Recovery Epitaxial Diodes (FREDs): FRED’s with the same voltage ratings. These cost effective Schottky
• lower forward voltage drop (VF) to minimize conduction loss Diodes can replace FRED’s as output rectifiers in high power 48 volt
enabling higher power conversion efficiencies. telecom rectifiers and DC-DC converters and as free wheeling and
• softer reverse recovery characteristics resulting in reduced EMI anti-parallel diodes in low voltage converters.
• avalanche energy rated (EAS) offering improved reliability.
VF (volts) trr(ns)
IF Typ 25OC Typ 25OC Package
Amps “200V” “200V” Part Number Configuration Style
15 0.80 80 APT15S20K TO-220

15 0.80 80 APT15S20KCT *common cathode
60 0.83 55 APT60S20S D3 PAK

30 0.80 55 APT30S20S
100 0.89 70 APT100S20B
60 0.83 55 APT60S20B
30 0.83 55 APT30S20B TO-247
30 0.80 55 APT30S20BCT *common cathode
15 0.80 80 APT15S20BCT *common cathode
60 0.83 55 APT60S20B2CT *common cathode T-MAXTM

100 0.89 70 APT100S20LCT *common cathode TO-264
100 0.89 70 APT2X101S20J
60 0.83 55 APT2X61S20J ISOTOP®
30 0.80 55 APT2X31S20J
* Current rating per leg for common cathode configuration
16
Linear MOSFETs
What is a Linear MOSFET? in high voltage, linear applications. These Linear MOSFETs
A MOSFET specifically designed to be more robust than a standard typically provide 1.5-2.0 times the DC SOA capability at high
MOSFET when operated with both high voltage and high current voltage compared to other MOSFET technologies optimized for
near DC conditions (>100msecs). switching applications.
The Problem with SMPS MOSFETs
Designers will need Linear MOSFETs when…
MOSFETs optimized for high frequency SMPS applications
• High Current & > 200V >100msec
have poor high voltage DC SOA. Most SMPS type MOSFETs over-
• Used as a variable power resistor
state SOA capability at high voltage on the data sheets. Above
• Soft start application (limit surge currents)
~30V and DC conditions, SOA drops faster than is indicated by PD
• Linear amplifier circuit
limited operation.
For pulsed loads (t<10ms) there is generally no problem using
Typical Applications…
a standard MOSFET.
• Active loads above 200 volts such as DC dynamic loads for
APT Technology Innovation testing power supplies, batteries, fuel cells, etc.
Introduced in 1999, APT modified its proprietary patented self- • High voltage, high current constant current sources.
aligned metal gate MOSFET technology for enhanced performance
BVDSS RDS(ON) ID(Cont) SOA Package

Volts Ohms Amps Watts Part Number Style
600 0.125 49 325 APL602B2

500 0.090 58 325 APL502B
1000 0.600 18 325 APL1001J
600 0.125 43 325 APL602J
500 0.090 52 325 APL502J
ISOTOP®[J]
T-MAX™[B2] TO-264[L] SOT-227
(ISOLATED BASE)
Part Numbers for TO-264 packages - replace ”B2”
with “L” in part number
Custom Products
In addition to the broad line of leading edge products in this catalog, APT is dedicated to providing innovative solutions for our cus-
tomers. This means working with our customers to solve their procurement, manufacturing or application problems. We are known as
the supplier that provides solutions that others cannot, or will not, provide. These include, but are not limited to:
• Custom silicon and packaging
• Supply chain management requirements
• Strategic inventories to allow for unexpected changes in demand
• Special testing
• Thermal and power management
• Hi-Rel Testing/Screening
Hermetic and Hi-Rel

Advanced Power Technology manufactures a broad range of discrete power semiconductors for industrial, military, and space applications.
Our focus is on the high voltage, high power, and high performance segment of this market. APT’s technology leadership allows us to
offer the latest high performance power MOSFETs, FREDFETs, IGBTs, and Diodes. All products listed in this catalog can be provided
in hermetic packages. APT is ISO9001-2000 registered, MIL-PRF-19500 certified and can offer TX, TXV, Space Level processing, Custom
testing and screening as well as Plastic Up-Screening. Contact your local representative or APT directly for a copy of the current Hi-Rel
Capabilities Brochure.
Die Products
Advanced Power Technology’s products are available in die form. Die information can be requested from our
website at www.advancedpower.com or contact APT directly for a copy of the current Die Product Catalog.
17
Power Modules
Advanced Power Technology offers a comprehensive line of standard off
the shelf module products as well as custom Application Specific Power Both the size and weight of a power function are shrunk drastically
Modules (ASPM®) designed specifically to meet your special needs as a result of integration. Most wiring is internal and little hardware
using state of the art assembly techniques, materials and silicon. Our is needed to assemble the module onto its heat sink and to connect
modules are used in a wide variety of markets and applications similar it electrically.
to our discrete products where their benefits provide our customers
with superior value. Those benefits include: Depending on the circuit complexity and on the power to be dissipated
it is sometimes possible to dispense entirely with a costly and heavy
base plate.
The use of bare dice results in a high degree of integration and
facilitates close spacing between devices. In such highly integrated For larger modules where a base plate is nonetheless obligatory, it may
power structures the number of external connections is kept to a be advantageous to specify a Metal-Matrix-Composite material (AlSiC).
bare minimum, four only in the case of a full bridge (+Vbus, 0Vbus, Such a baseplate permits significant weight reduction (AlSiC density
VOut1, VOut2). All other connections are internal and very short for = 3, Copper density = 8.6).
minimum parasitic resistance and inductance. Low parasitics permit
safe operation at high frequencies by improving efficiency and reducing
voltage overshoots at device turn off. Lower overshoots also equate to Using a power module greatly reduces the amount of required external
less EMI/RFI and easier filtering. hardware — busbars, screws, wire, etc.
Thanks to the compact nature of ASPM® modules, decoupling capacitors Procurement costs for the complete circuit function are much less, as
may be situated close to the power bus, thereby nullifying the effects only a single macro-component is sourced instead of the multitude
of stray inductance between bus and module. of parts needed for a discrete solution.
The attachment of bare dice onto a substrate results in excellent thermal Labor costs for system assembly at the end customer are much lower.
management with full galvanic isolation to the base plate.
Time to market is shortened, thereby benefiting the customer’s Return-
The substrate (Insulated Metal Substrate or ceramic either alumina on-Investment. APT Europe provides the engineering of the complete
Al2O3 or aluminium nitride AlN) and the type and number of power function, allowing the customer to concentrate on system and
semiconductor chips are carefully chosen based on the required packaging considerations.
electrical and thermal performance as well as on cost.
The Customer-Specific-Module approach offers great flexibility. An
Kelvin connections to gates and sources can be implemented directly ASPM® module is easily upgradeable through design improvements,
on-chip, thereby separating control signals from the power paths for substitution of more advanced semiconductors, better manufacturing
optimum noise immunity. techniques and so on in order to maintain state-of-the-art performance
at competitive costs.
For special applications like linear, RF and Hi-Rel, power semiconductor
chips may be pre-sorted into narrow bands of VGS(th) or leakage
current, to improve system performance through parameter Modules are compatible with standard of the industry, easy to market
matching. and price competitive. Full product range is offered including PT, NPT
and Trench gate IGBTs, Power MOS V, Power MOS 7 MOSFETs and
Circuit functions that generate substantial losses are integrated onto FREDFETs, CoolmosTM and SiC diodes in a comprehensive range of
substrates for external cooling, while drivers and protection elements electrical configurations. Low profile modules combined with state
dissipating little power are assembled in SMD form onto PCBs inside of the art devices permit enhanced electrical, thermal and mechanical
the housing. ratings.
Galvanic isolation of the input signals may be realized via internal

optocouplers or transformers with an integrated DC-DC converter ASPM® modules integrate the exact customer electrical configuration
furnishing isolated LV power. Such a module is driven by low-level (power and driver) including device part number (mix of silicon sources
ground-referenced signals. possible). Specific silicon (sorted on specific parameters), specific
material and assembly processes, dedicated shape of connectors and
RCD snubber networks may also be integrated into an ASPM® module, package combined with the implementation of screening procedures
their close proximity to the power semiconductors guaranteeing make the ASPM® module to meet thermal, electrical, quality and
effectiveness. reliability requirements of the customer.
The ASPM® module is designed to meet 100% of the customer needs.
Because all internal power connections are mask defined during It provides the customer with a unique solution.
substrate manufacture, reproducibility of both thermal and electrical
characteristics is near perfect, both within a given batch and from lot
to lot. APT has development, design and engineering competencies,
analytical and modeling tools, manufacturing technologies, multi-
Summarizing, better voltage safety margins together with first class site infrastructure to satisfy your requirements in power integration,
and reproducible thermal and electrical performance lead to improved providing design for manufacturability, and improvement in
reliability of ASPM® modules compared to discrete assemblies. performance and reliability.
The thermal cycling capability of the module can be dramatically

extended by replacing the copper base plate with engineered materials
such as AlSiC due to the closely matched Temperature Coefficients of
Expansion compared to the internal ceramic substrates.
18
IGBT Power Modules
3 PHASE BRIDGE
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package
(V) TC=80 C at rated Ic at rated Ic
o
Type Style NTC Part Number Long pin package
20 2.1 40 NPT E2 - APTGF20X60E2 E2
600 30 2.1 40 NPT E2 - APTGF30X60E2
50 2.1 40 NPT E2 - APTGF50X60E2
10 3.2 100 NPT E2 - APTGF10X120E2
1200 15 3.2 100 NPT E2 - APTGF15X120E2
25 3.2 100 NPT E2 - APTGF25X120E2
50 3.2 100 NPT E2 - APTGF50X120E2
1700 50 3.2 30 NPT E2 - APTGS50X170E2
20 2.1 40 NPT P2 - APTGF20X60P2

20 2.1 40 NPT P2 YES APTGF20X60TP2
30 2.1 40 NPT P2 - APTGF30X60P2
30 2.1 40 NPT P2 YES APTGF30X60TP2 Short pin package
50 2.1 40 NPT P2 - APTGF50X60P2
600 50 2.1 40 NPT P2 YES APTGF50X60TP2 P2
90 2.1 40 NPT E3 - APTGF90X60E3
90 2.1 50 NPT E3 YES APTGF90X60TE3
125 2.0 40 NPT E3 - APTGF125X60E3
150 2.1 50 NPT E3 - APTGF150X60E3
10 3.2 100 NPT P2 - APTGF10X120P2
15 3.2 100 NPT P2 - APTGF15X120P2 E3
25 3.2 100 NPT P2 - APTGF25X120P2
50 3.2 100 NPT P2 - APTGF50X120P2
1200 50 3.2 100 NPT P2 YES APTGF50X120TP2
50 3.2 100 NPT E3 - APTGF50X120E3
75 1.7 90 TRENCH E3 - APTGT75X120E3
75 1.7 90 TRENCH E3 YES APTGT75X120TE3
100 1.7 90 TRENCH E3 - APTGT100X120E3
150 1.7 90 TRENCH E3 - APTGT150X120E3
50 3.2 30 NPT E3 - APTGS50X170E3 Note: Any reference can be built
1700 50 3.2 30 NPT E3 YES APTGS50X170TE3 in full bridge configuration instead
75 3.5 60 NPT E3 - APTGS75X170E3 of 3 phase bridge
75 3.5 60 NPT E3 YES APTGS75X170TE3
P+
T1
Q1 Q3 Q5
5 9
1
NTC is optional: APTG . . . . E3 (w/o NTC) 6 10
APTG . . . .TE3 (with NTC) 2
U V W
R
7 11
3
Q2 8 Q4 12 Q6
4
N- T2
(for detailed ratings and pin-out location, refer to the product datasheet at www.advancedpower.com)
19
IGBT Power Modules
3 PHASE BRIDGE + RECTIFIER

(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number
10 2.1 40 NPT P2 YES APTGF10X60RTP2

10 2.1 40 NPT P2 YES APTGF10X60BTP2 P2
15 2.1 40 NPT P2 YES APTGF15X60BTP2
600 20 2.1 40 NPT P2 YES APTGF20X60RTP2
10 2.5 75 NPT P2 YES APTGS10X120RTP2
10 2.5 75 NPT P2 YES APTGS10X120BTP2
15 2.5 75 NPT P2 YES APTGS15X120RTP2 P3
15 2.5 75 NPT P2 YES APTGS15X120BTP2
25 2.5 80 NPT P2 YES APTGS25X120RTP2
1200 25 2.1 80 NPT P2 YES APTGS25X120BTP2
35 1.7 90 TRENCH P3 YES APTGT35X120RTP3
35 1.7 90 TRENCH P3 YES APTGT35X120BTP3
1700 50 2.0 - TRENCH P3 YES APTGT50X170RTP3
50 2.0 - TRENCH P3 YES APTGT50X170BTP3
21 22
Q1 Q3 Q5 9
CR10 CR12 CR14 20 18 16
CR7
19 17 15
Brake switch is optional: 1
7 6
2
APTG . . . . RTP2 (w/o brake) 4 5
3 R
APTG . . . . BTP2 (with brake) CR11 CR13 CR15 14 13 12 11
Q7
Q2 Q4 Q6
23 24 10 8
Note: Any reference can be built in full bridge configuration instead of 3 phase bridge
20
IGBT Power Modules
ASYMMETRICAL BRIDGE
VBUS
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package Q1

VBUS SENSE
(V) TC=80 C at rated Ic

o
at rated Ic Type Style NTC Part Number G1 CR3
E1
40 2.2 50 PT SP4 YES APTGU40DH60T OUT1 OUT2
70 2.2 50 PT SP4 YES APTGU70DH60T Q4
G4
600 90 2.1 50 NPT SP4 YES APTGF90DH60T CR2
100 2.2 50 PT SP6 - APTGU100DH60 0/VBUS SENSE

E4
180 2.1 50 NPT SP6 - APTGF180DH60 NTC1 0/VBUS NTC2
30 3.3 75 PT SP4 YES APTGU30DH120T

50 3.2 50 NPT SP4 YES APTGF50DH120T
1200 60 3.3 75 PT SP4 YES APTGU60DH120T
90 3.3 75 PT SP6 - APTGU90DH120
150 3.2 50 NPT SP6 - APTGF150DH120 SP6
FULL BRIDGE
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number SP4
40 2.2 50 PT SP4 YES APTGU40H60T

VBUS
70 2.2 50 PT SP4 YES APTGU70H60T
Q1 Q3
600 90 2.1 50 NPT SP4 YES APTGF90H60T
100 2.2 50 PT SP6 - APTGU100H60 G1 G3
180 2.1 50 NPT SP6 - APTGF180H60 E1 OUT1 OUT2 E3
30 3.3 75 PT SP4 YES APTGU30H120T Q2 Q4
50 3.2 50 NPT SP4 YES APTGF50H120T G4

G2
1200 60 3.3 75 PT SP4 YES APTGU60H120T
90 3.3 75 PT SP6 - APTGU90H120 E2 E4
150 3.2 50 NPT SP6 - APTGF150H120 NTC1 0/VBUS NTC2
DUAL COMMON SOURCE C1 C2
Q1 Q2
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package G1 G2
(V) TC=80 C at rated Ic at rated Ic

o
Type Style NTC Part Number
E1 E2
70 2.2 50 PT SP4 YES APTGU70DU60T E

NTC1 NTC2
90 2.1 50 NPT SP4 YES APTGF90DU60T
600 140 2.2 50 PT SP4 YES APTGU140DU60T
200 2.2 50 PT SP6 - APTGU200DU60
350 2.1 50 NPT SP6 - APTGF350DU60 SP6
60 3.3 75 PT SP4 YES APTGU60DU120T
1200 100 3.2 50 NPT SP4 YES APTGF100DU120T
120 3.3 75 PT SP4 YES APTGU120DU120T
180 3.3 75 PT SP6 - APTGU180DU120
300 3.2 50 NPT SP6 - APTGF300DU120
SP4
21
IGBT Power Modules
BOOST CHOPPER
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package VBUS NTC2
VBUS SENSE
CR1
50 2.1 40 NPT D1 - APTGF50DA60D1
70 2.2 50 PT SP4 YES APTGU70DA60T
75 2.1 40 NPT D1 - APTGF75DA60D1
OUT
90 2.0 50 NPT D1 - APTGF90DA60D1
Q2
90 2.1 50 NPT SP4 YES APTGF90DA60T G2
125 2.0 40 NPT D1 - APTGF125DA60D1
600 140 2.2 50 PT SP4 YES APTGU140DA60T E2
165 2.0 50 NPT D1 - APTGF165DA60D1
180 2.0 50 NPT D3 - APTGF180DA60D3 0/VBUS NTC1
180 2.1 50 NPT SP4 YES APTGF180DA60T
200 2.2 50 PT SP6 - APTGU200DA60
250 2.0 40 NPT D3 - APTGF250DA60D3
330 2.0 50 NPT D3 - APTGF330DA60D3
350 2.1 50 NPT SP6 - APTGF350DA60
25 1.7 90 Trench D1 - APTGT25DA120D1
1200 100 1.7 90 Trench D1 - APTGT100DA120D1
180 3.3 75 PT SP6 - APTGU180DA120
300 3.2 50 NPT SP6 - APTGF300DA120
30 2.0 - Trench D1 - APTGT30DA170D1
50 2.0 - Trench D1 - APTGT50DA170D1
1700 100 2.0 200 Trench D1 - APTGT100DA170D1
D1 D3 SP4 SP6
22
IGBT Power Modules
BUCK CHOPPER
VBUS NTC2
Q1
G1
50 2.1 40 NPT D1 - APTGF50SK60D1
70 2.2 50 PT SP4 YES APTGU70SK60T E1
75 2.1 40 NPT D1 - APTGF75SK60D1 OUT

90 2.0 50 NPT D1 - APTGF90SK60D1
90 2.1 50 NPT SP4 YES APTGF90SK60T
125 2.0 40 NPT D1 - APTGF125SK60D1
0/VBUS SENSE
600 140 2.2 50 PT SP4 YES APTGU140SK60T
165 2.0 50 NPT D1 - APTGF165SK60D1
0/VBUS NTC1
180 2.0 50 NPT D3 - APTGF180SK60D3
200 2.2 50 PT SP6 - APTGU200SK60
250 2.0 40 NPT D3 - APTGF250SK60D3
330 2.0 50 NPT D3 - APTGF330SK60D3
350 2.1 50 NPT SP6 - APTGF350SK60
25 1.7 90 Trench D1 - APTGT25SK120D1
60 3.3 75 PT SP4 YES APTGU60SK120T
1200 100 1.7 90 Trench D1 - APTGT100SK120D1
120 3.3 75 PT SP4 YES APTGU120SK120T
180 3.3 75 PT SP6 - APTGU180SK120
300 3.2 50 NPT SP6 - APTGF300SK120
30 2.0 - Trench D1 - APTGT30SK170D1
50 2.0 - Trench D1 - APTGT50SK170D1
1700 100 2.0 200 Trench D1 - APTGT100SK170D1
D1 D3 SP4 SP6
23
IGBT Power Modules
PHASE LEG
(V) TC=80o C at rated Ic at rated Ic Type Style NTC Part Number VBUS NTC2
Q1
50 2.1 40 NPT D1 - APTGF50A60D1 G1
70 2.2 50 PT SP4 YES APTGU70A60T
75 2.1 40 NPT D1 - APTGF75A60D1 E1
90 2.0 50 NPT D1 - APTGF90A60D1 OUT
90 2.1 50 NPT SP4 YES APTGF90A60T Q2
125 2.0 40 NPT D1 - APTGF125A60D1 G2
600 140 2.2 50 PT SP4 YES APTGU140A60T

E2
165 2.0 50 NPT D1 - APTGF165A60D1
180 2.0 50 NPT D3 - APTGF180A60D3 0/VBUS NTC1
180 2.1 50 NPT SP4 YES APTGF180A60T
200 2.2 50 PT SP6 - APTGU200A60
250 2.0 40 NPT D3 - APTGF250A60D3
330 2.0 50 NPT D3 - APTGF330A60D3
350 2.1 50 NPT SP6 - APTGF350A60
25 1.7 90 Trench D1 - APTGT25A120D1
50 3.2 50 NPT SP4 YES APTGF50A120T
100 1.7 90 Trench D1 - APTGT100A120D1
1200 100 3.2 50 NPT SP4 YES APTGF100A120T
150 1.7 90 Trench D1 - APTGT150A120D1
150 1.7 90 Trench D3 - APTGT150A120D3
180 3.3 75 PT SP6 - APTGU180A120
200 1.7 90 Trench D3 - APTGT200A120D3
300 1.7 90 Trench D3 - APTGT300A120D3
300 3.2 50 NPT SP6 - APTGF300A120
30 2.0 - Trench D1 - APTGT30A170D1
50 2.0 - Trench D1 - APTGT50A170D1
75 2.0 200 Trench D1 - APTGT75A170D1
1700 100 2.0 200 Trench D1 - APTGT100A170D1
150 2.0 200 Trench D1 - APTGT150A170D1
150 2.0 200 Trench D3 - APTGT150A170D3
200 2.0 200 Trench D3 - APTGT200A170D3
300 2.0 200 Trench D3 - APTGT300A170D3
D1 D3 SP4 SP6
24
IGBT Power Modules
SINGLE SWITCH
VCES IC(A) VCE(ON) Tf(Ic)(ns) IGBT Package 1
3
200 2.1 40 NPT D4 - APTGF200U60D4
300 2.1 40 NPT D4 - APTGF300U60D4
5
600 360 2.0 50 NPT D4 - APTGF360U60D4
500 2.0 40 NPT D4 - APTGF500U60D4 2
660 2.0 50 NPT D4 - APTGF660U60D4
200 1.7 90 Trench D4 - APTGT200U120D4
1200 300 1.7 90 Trench D4 - APTGT300U120D4 D4
400 1.7 90 Trench D4 - APTGT400U120D4
600 1.7 90 Trench D4 - APTGT600U120D4
200 2.0 - Trench D4 - APTGT200U170D4
1700 300 2.0 200 Trench D4 - APTGT300U170D4
400 2.0 200 Trench D4 - APTGT400U170D4
600 2.0 200 Trench D4 - APTGT600U170D4
SINGLE SWITCH, INTELLIGENT POWER MODULE

LP8
70 3.2 50 NPT LP8 YES APTLGF70U120T
75 3.2 50 NPT LP8 YES APTLGF75U120T*
1200 150 3.2 50 NPT LP8 YES APTLGF150U120T*
* AlSiC base plate for extended reliability and AlN substrate for improved thermal performance
C1 C2
+12V ISOLATED
AUXILIARY Single switch IGBT module with integrated
GND POWER driver and isolated power supplies dedicated
SUPPLY
to operate in ZVS (zero voltage switching)
+15 V
-15 V
0V
UNDERVOLTAGE
LOCKOUT
operation at 80 KHz.
_
Q SIGNAL
HIGH
PROCESSING FREQUENCY
DRIVER
TRANSFORMER
INH CIRCUIT
E0 HIGH FORCED
FREQUENCY START UP E1 E2
S0 TRANSFORMER CIRCUIT
NTC1
NTC2
25
MOSFET Power Modules
BOOST CHOPPER
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package VBUS SENSE
VBUS NTC2
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number

CR1
10 125 10 MOS 7 SP4 YES APTM20DAM10T

200 8 147 10 MOS 7 SP4 YES APTM20DAM08T
OUT
5 250 10 MOS 7 SP6 - APTM20DAM05
Q2
4 300 10 MOS 7 SP6 - APTM20DAM04 G2
38 64 10 MOS 7 SP4 YES APTM50DAM38T
500 35 70 30 MOS 7 SP4 YES APTM50DAM35T E2
19 125 10 MOS 7 SP6 - APTM50DAM19

17 140 30 MOS 7 SP6 - APTM50DAM17 0/VBUS NTC1
SP4 SP6
BUCK CHOPPER
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package VBUS NTC2
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number Q1
G1
10 125 10 MOS 7 SP4 YES APTM20SKM10T

E1
200 8 147 10 MOS 7 SP4 YES APTM20SKM08T
5 250 10 MOS 7 SP6 - APTM20SKM05 OUT
4 300 10 MOS 7 SP6 - APTM20SKM04

38 64 10 MOS 7 SP4 YES APTM50SKM38T
500 35 70 30 MOS 7 SP4 YES APTM50SKM35T
0/VBUS SENSE
19 125 10 MOS 7 SP6 - APTM50SKM19
17 140 30 MOS 7 SP6 - APTM50SKM17 0/VBUS NTC1
FULL BRIDGE
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package VBUS
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number Q1 Q3
20 62 10 FREDFET 7 SP4 YES APTM20HM20FT G1 G3
200 16 74 10 FREDFET 7 SP4 YES APTM20HM16FT S1 OUT1 OUT2 S3
10 125 10 FREDFET 7 SP6 - APTM20HM10F Q2 Q4
8 147 10 FREDFET 7 SP6 - APTM20HM08F

75 32 10 FREDFET 7 SP4 YES APTM50HM75FT G2 G4
500 65 37 30 FREDFET 7 SP4 YES APTM50HM65FT S2 S4
38 64 10 FREDFET 7 SP6 - APTM50HM38F NTC1 0/VBUS NTC2
35 70 30 FREDFET 7 SP6 - APTM50HM35F
SP4 SP6
26
FULL BRIDGE + SERIES AND PARALLEL DIODES
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number SP4
200 20 62 10 MOS 7 SP4 YES APTM20HM20ST

500 75 32 10 MOS 7 SP4 YES APTM50HM75ST
1000 450 13 10 MOS 7 SP4 YES APTM100H45ST
VBUS
CR1A CR3A
CR1B CR3B
Q1 Q3
G1 G3
OUT1 OUT2 S3
S1
CR2A CR4A
CR2B CR4B
Q2 Q4
G2 G4
S2 S4
NTC1 0/VBUS NTC2
FULL BRIDGE + RECTIFIER BRIDGE

(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number SP4
500 75 32 10 FREDFET 7 SP4 YES APTM50HM75FRT

+A VBUS1
+B VBUS2 Q1 Q3
CR1 CR3
LA G1 G3
LB OUT1A OUT2A NTC1
NA
OUT1B Q2 OUT2B Q4
NB
R1
CR2 CR4
G2 G4
NTC2
-A S2 S4
-B 0/VBUS
FULL BRIDGE, INTELLIGENT POWER MODULE

LP8W
(V) m Ohms TC=80 C at rated Ic
o
500 100 37 60 FREDFET 5 LP8W YES APTLM50H10FRT

75 32 5 FREDFET 7 LP8W YES APTLM50HM75FRT
CTN1
H1
H3
V1
V3
L1
L1
L3
L3
D
+BUS
+
DRIVER 1 DRIVER 3
L OUT1
N DRIVER 5
OUT2
DRIVER 2 DRIVER 4
-
0/VBUS
H2
H4
V4
L4
L4
V5
H5
0/V5
CTN2
VSH+
RS
VSH-
S
27
PHASE LEG
VBUS NTC2
o
Type Style NTC Part Number Q1
G1
10 125 10 FREDFET 7 SP4 YES APTM20AM10FT

8 147 10 FREDFET 7 SP4 YES APTM20AM08FT E1
200 5 250 10 FREDFET 7 SP6 - APTM20AM05F OUT

5 250 10 FREDFET 5 LP8 YES APTM20AM05FT Q2
4 300 10 FREDFET 7 SP6 - APTM20AM04F G2
38 64 10 FREDFET 7 SP4 YES APTM50AM38FT
35 70 30 FREDFET 7 SP4 YES APTM50AM35FT E2
500 25 110 10 FREDFET 5 LP8 YES APTM50AM25FT
19 125 10 FREDFET 7 SP6 - APTM50AM19F 0/VBUS NTC1
17 140 30 FREDFET 7 SP6 - APTM50AM17F
SP4
SP6
LP8
PHASE LEG + SERIES AND PARALLEL DIODES

NTC2

o
200 10 125 10 MOS 7 SP4 YES APTM20AM10ST G1
6 225 40 MOS 7 SP6 - APTM20AM06S OUT
38 64 10 MOS 7 SP4 YES APTM50AM38ST S1

500 24 110 5 MOS 7 SP6 - APTM50AM24S Q2
19 125 5 MOS 7 LP8W YES APTM50AM19ST

230 26 10 MOS 7 SP4 YES APTM100A23ST G2
1000 130 49 15 MOS 7 SP6 - APTM100A13S
120 50 10 MOS 5 LP8W YES APTM100A12ST S2
0/VBUS
NTC1
SP4
SP6
LP8W
28
ASYMMETRICAL BRIDGE
VBUS

o
VBUS SENSE
CR3
20 62 10 MOS 7 SP4 YES APTM20DHM20T G1

S1 OUT1 OUT2
200 16 74 10 MOS 7 SP4 YES APTM20DHM16T
Q4
10 125 10 MOS 7 SP6 - APTM20DHM10
CR2
8 147 10 MOS 7 SP6 - APTM20DHM08 G4
75 32 10 MOS 7 SP4 YES APTM50DHM75T 0/VBUS SENSE

S4
500 65 37 30 MOS 7 SP4 YES APTM50DHM65T NTC1 0/VBUS NTC2
38 64 10 MOS 7 SP6 - APTM50DHM38

35 70 30 MOS 7 SP6 - APTM50DHM35
SP4
SP6
DUAL COMMON SOURCE

o
D1 D2
Q1 Q2
10 125 10 MOS 7 SP4 YES APTM20DUM10T
8 147 10 MOS 7 SP4 YES APTM20DUM08T G1 G2
200 5 250 10 MOS 7 SP6 - APTM20DUM05
5 250 10 MOS 5 LP8 YES APTM20DUM05T S1 S2
4 300 10 MOS 7 SP6 - APTM20DUM04 NTC1

S
NTC2
500 25 110 10 MOS 5 LP8 YES APTM50DUM25T
19 125 10 MOS 7 SP6 - APTM50DUM19
17 140 30 MOS 7 SP6 - APTM50DUM17
SP4
SP6
LP8
29
SINGLE SWITCH + SERIES AND PARALLEL DIODES

SK CR1
D
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number S
200 9 145 40 MOS 7 J3 - APTM20UM09S Q1
5 237 5 MOS 7 J3 - APTM20UM05S G
500 25 110 10 MOS 7 J3 - APTM50UM25S

19 122 5 MOS 7 J3 - APTM50UM19S
1000 130 48 10 MOS 5 J3 - APTM100U13S
J3
MOSFET with SiC Diodes Power Modules

VBUS NTC2
BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES VBUS SENSE
CR1
o
OUT
Q2
500 38 67 5 MOS 7 SP4 YES APTM50DAM38CT

G2
S2
0/VBUS NTC1
PHASE LEG + SERIES W/SILICON CARBIDE PARALLEL DIODES

NTC2
VBUS
Q1

G1
OUT
500 38 67 5 MOS 7 SP4 YES APTM50AM38SCT S1
24 110 5 MOS 7 SP6 - APTM50AM24SC Q2
1000 230 27 10 MOS 7 SP4 YES APTM100A23SCT G2
130 49 15 MOS 7 SP6 - APTM100A13SC

0/VBUS
S2
NTC1
FULL BRIDGE + SERIES W/SILICON CARBIDE PARALLEL DIODES VBUS
CR1A CR3A
VDSS RDS(ON) ID(A) Tf(Id)(ns) MOSFET Package CR1B CR3B

Q1 Q3

o
Type Style NTC Part Number G1 G3
OUT1 OUT2 S3
S1
CR2A CR4A
500 75 34 5 MOS 7 SP4 YES APTM50HM75SCT Q2

CR2B CR4B
Q4
1000 450 14 10 MOS 7 SP4 YES APTM100H45SCT G2 G4

S2 S4
NTC1 0/VBUS NTC2
SP4
SP6
30
COOLMOS with SiC Diodes Power Modules
TM
VBUS NTC2
VBUS SENSE
BOOST CHOPPER W/SILICON CARBIDE PARALLEL DIODES

CR1

OUT
Q2
600 18 107 10 COOLMOS SP4 YES APTC60DAM18CT G2
E2
0/VBUS NTC1
PHASE LEG + SERIES W/SILICON CARBIDE PARALLEL DIODES NTC2
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number Q1
G1
600 35 54 10 COOLMOS SP4 YES APTC60AM35SCT OUT
18 107 10 COOLMOS SP6 - APTC60AM18SC S1

Q2
150 21 10 COOLMOS SP4 YES APTC80A15SCT
800 100 32 10 COOLMOS SP4 YES APTC80A10SCT G2
75 43 10 COOLMOS SP6 - APTC80AM75SC

0/VBUS
S2
NTC1
VBUS
FULL BRIDGE + SERIES W/SILICON CARBIDE PARALLEL DIODES CR1A CR3A

CR1B CR3B
Q1 Q3
(V) m Ohms TC=80o C at rated Ic Type Style NTC Part Number G1 G3

OUT1 OUT2 S3
S1
CR2A CR4A
CR2B CR4B
600 70 29 10 COOLMOS SP4 YES APTC60HM70SCT Q2 Q4
800 290 11 10 COOLMOS SP4 YES APTC80H29SCT G2

S2
G4
S4
NTC1 0/VBUS NTC2
“CoolMOSTM” comprise a new family of transistors de-

veloped by Infineon Technologies AG. “CoolMOSTM” is a
SP4 SP6 trademark of Infineon Technologies AG”.
DIODE Power Modules
SINGLE DIODE
VRRM VF(V) IF(A) DIODE Package K1 K2
(V) Tj=25o C TC80o C Type Style Part Number
200 1.1 500 FRED LP4 APTDF500U20

400 1.5 500 FRED LP4 APTDF500U40
600 1.8 450 FRED LP4 APTDF450U60
1000 2.3 430 FRED LP4 APTDF430U100 A1 A2
LP4
1200 2.5 400 FRED LP4 APTDF400U120
31
Application Specific Power Modules (ASPM®)
Whatever your application needs are including . . .
Power Supplies Lighting Control Welding Systems

UPS Induction Heating Laser Control
Medical Imaging Battery Charger RF Amplifiers
Solid State Relays Linear Amplifiers Inverters/Speed Controllers
Our custom approach provides you with a fully integrated solution designed to meet your specific
requirements with an optimized balance between performance and cost without compromising quality and
reliability.
We work closely with you using the latest technologies and innovative circuit and mechanical design to pro-
vide the competitive advantage you need.
FEATURES AND BENEFITS

A mix of the latest silicon & packaging technologies combined with innovative circuit design enables
APT to deliver high performance products that meet or exceed our customer requirements in terms of:
POWER DENSITY AND SIZE REDUCTION
• High level of integration
-Power Stage (H-Bridge, 3 Phase Bridge, etc.)
-Control & protection functions located on internal PCB
-Opto coupler, fiber optic or transformer for isolation of driver circuits
• Minimum number of external connections
• Reduced overall system size and weight
ELECTRICAL CHARACTERISTICS ENHANCEMENT:

• Short internal connections minimize parasitic resistance and inductance
-Allows high oprating frequencies
-Reduced voltage overshoot
-Low EMI and RFI
-Improved efficiency
• Decoupling capacitors to nullify effects of stray inductance
• Die can be pre-sorted to enhance performance
THERMAL MANAGEMENT:
• Power devices mounted directly on thermally conductive substrates
• Choice of substrates for optimum performance and cost
• Full isolation to baseplate
• Engineered materials such as AlSiC, Cu/W, Cu/Mo extend thermal cycling capability
PACKAGES AND MATERIALS
• Standard or Custom Package Outlines
• Wide Variety of Materials for Baseplates, Substrates, Terminals, and Connectors
• Leading Edge APT Silicon and Other Chip/Component Suppliers
• Integrated Liquid Cooling Option
PROCESS CAPABILITES
Thick Film Solder Reflow Surface Mount
Copper Vacuum Furnace SMD Auto Placement
Silver N2/Forming Gas/H2 Furnace Through Hole Insertion
Resistors Various Solder Alloys
Multi-Layer
Encapsulation Wire Bond

Die Coat Auto
Potting Compounds Manual
Hard Top Resins/Epoxies Heavy Gauge Al Wire
If you have a specific electrical, mechanical, thermal, or reliability challenge, submit a technical support
request from our website.
ASPM® is a registered trademark of Advanced Power Technology
32
Power Module Outlines
E2
Pin out location depends on the module
configuration. Please refer to the product
datasheet for pins assignment.
All dimensions in millimeter
D1
P2
D3 E3
D4 P3
33
Power Module Outlines
SP4
Pin out location depends on the module
configuration. Please refer to the product
datasheet for pins assignment.
All dimensions in millimeter
LP4
SP6 - 3 outputs
LP8 SP6 - 4 outputs
LP8W J3
34
Package Outline Drawings
Revised
Revised 8/29/97
4/18/95
ISOTOP® is a registered trademark of SGS Thomson

35
Visit our web site at:
www.advancedpower.com
Sales Offices
Eastern North America
Tel: (978) 664-8629
Fax: (978) 664-8657
E-Mail: rsmeast@advancedpower.com
Western North America

Tel: (541) 382-8028
Fax: (541) 388-0364
E-Mail: rsmwest@advancedpower.com
Asia-Pacific Rim
Tel: +866-2-2760-0270
Fax: +866-2-2760-0390
E-Mail: rsmasia@advancedpower.com
Europe, Middle East, Africa

Tel: 33-557 92 15 15
Fax: 33-556 47 97 61
E-Mail: rsmeurope@advancedpower.com
South & Central America

Tel: (541) 382-8028
Fax: (541) 388-0364
E-Mail: rsmwest@advancedpower.com
APT reserves the right to change, without notice, the

specifications and information contained herein.
March 2004

2004 Catalog

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1

Advanced Power Technology

HIGH VOLTAGE SMPS TRANSISTORS Page No.

“COOLMOS” comprise a new family of transistors developed by Inﬁneon Technologies AG.

up to 200 kHz NPT Type Conventional Super Junction

• Fast–50 kHz Max • Power MOS V

Fast Anti-Parallel Add APT FRED &

Poly Gate/Planar Cell

Design Tools available at www.advancedpower.com

POWER MOS 7® SINGLE

1200 3.3 29 APT35GP120J

1200 3.3 46 APT35GP120B2DF2 264-MAX TM[L2]

600 2.2 96 APT65GP60L2DF2 264-MAXTM

1200 3.3 29 APT35GP120JDF2

• Short Circuit 600 2.1 50 APT50GF60BR

• Low to Moderate 600 1.6 100 APT100GF60B2R

REDUCED SHOOT THROUGH SUSCEPTIBILITY…

HIGH COMMUTATING dv/dt CAPABILITY… from defect

1200 4.700 3.5 --- APT1204R7KFLL

800 0.520 15 APT8052BLL APT8052BFLL

500 0.240 22 APT5024BLL APT5024BFLL

1200 0.400 30 --- APT12040L2FLL

MOSFET/FRED (“Combi Products”)

500 0.100 44 APT5010JLLU2

• In soft switched circuits, where the body diode carries

BVDSS RDS(ON) ID(Cont) MOSFET P/N FREDFET P/N Package

1200 1.600 8 --- APT1201R6BVFR

800 0.750 12 APT8075BVR APT8075BVFR

500 0.280 20 APT5028BVR APT5028BVFR

Part Numbers for D3

400 0.200 23 --- APT4020BVFR

400 0.070 53 --- APT40M70JVFR

500 0.100 44 APT5010JVRU2 Boost (U2)

BVDSS RDS(ON) ID(Cont) Package

800 0.450 11 APT11N80KC3 TO-220

800 0.145 34 APT34N80B2C3 T-MAXTM

“COOLMOS” comprise a new family of transistors developed by Inﬁneon Technologies AG.

Switching Losses Nearly Eliminated -ZERO RECOVERY™

High Temperature Operation

Low Resistance–High Power Density

High Termal Conductivity

Positive VF Temperature Coefficient Thermally Stable Paralleling

ZERO RECOVERY™ is a trademark of Cree Inc.

Silicon Carbide 5 1.6 APT5SC120K Single

waveforms for each of the 3 “series” of products.

DS Our proprietary platinum lifetime control process results

• Softer Recovery – to minimize EMI

The “D” and “DS” series of FREDs are currently offered as

1200 30 2.0 370 APT30D120B

1000 15 1.9 80 APT15D100BCT

* Current rating per leg for common cathode conﬁguration

1000 60 1.9 280 APT60D100LCT

“DS” Series FREDs Two - 300V FREDs in Series

600 30 4.0 20 APT30DS60B TO-247

15 0.80 80 APT15S20K TO-220

60 0.83 55 APT60S20S D3 PAK

15 0.80 80 APT15S20BCT *common cathode

60 0.83 55 APT60S20B2CT *common cathode T-MAXTM

BVDSS RDS(ON) ID(Cont) SOA Package

600 0.125 49 325 APL602B2

Hermetic and Hi-Rel

Galvanic isolation of the input signals may be realized via internal

The thermal cycling capability of the module can be dramatically