SM3331PSQG ®

P-Channel Enhancement Mode MOSFET

Features Pin Description

• -30V/-40A,
D D
RDS(ON) = 6.1mΩ(max.) @ VGS =-10V D D

RDS(ON) = 11mΩ(max.) @ VGS =-4.5V

• HBM ESD protection level pass 8KV S S
SG

• 100% UIS + Rg Tested

• Reliable and Rugged DFN3.3x3.3-8(Saw-EP)

• Lead Free and Green Devices Available

( 5,6,7,8 )
(RoHS Compliant) D D DD

Note : The diode connected between the gate and

source serves only as protection against ESD. No
gate overvoltage rating is implied.
(4)
G

Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered S S S
(1, 2, 3)
Systems.

P-Channel MOSFET
Ordering and Marking Information

SM3331PS Package Code

QG : DFN3.3x3.3-8(Saw-EP)
Assembly Material Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Handling Code
Temperature Range TR : Tape & Reel
Package Code Assembly Material
G : Halogen and Lead Free Device
SM
SM3331PS QG : 3331 XXXXX - Lot Code
XXXXX

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  Sinopower Semiconductor, Inc. 1 www.sinopowersemi.com

Rev. A.3 - May, 2015
SM3331PSQG ®

Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Rating Unit

Common Ratings
V DSS Drain-Source Voltage -30
V
V GSS Gate-Source Voltage ±25
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
IS Diode Continuous Forward Current TC=25°C -40 b
TC=25°C -40 b
ID Continuous Drain Current A
TC=100°C -40 b
IDM Pulsed Drain Current TC=25°C -160 b
TC=25°C 62.5
PD Maximum Power Dissipation W
TC=100°C 25
R θJC Thermal Resistance-Junction to Case Steady State 2 °C/W
TA=25°C -21.3
ID Continuous Drain Current A
TA=70°C -17.1
TA=25°C 4.2
PD Maximum Power Dissipation W
TA=70°C 2.7
t ≤ 10s 30
RθJA Thermal Resistance-Junction to Ambient °C/W
Steady State 75
IAS a Avalanche Current, Single pulse L=0.5mH 27 A
a
EAS Avalanche Energy, Single pulse L=0.5mH 182 mJ
o
Note a：UIS tested and pulse width are limited by maximum junction temperature 150 C
(initial temperature TJ = 25o C).
Note b：Package limited.

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Rev. A.3 - May, 2015
SM3331PSQG ®

Electrical Characteristics (TA = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Static Characteristics
BVDSS Drain-Source Breakdown Voltage V GS=0V, ID S=-250µA -30 - - V
V DS=-24V, VGS=0V - - -1
IDSS Zero Gate Voltage Drain Current µA
TJ=85°C - - -30
VGS(th) Gate Threshold Voltage V DS=V GS, IDS=-250µA -1.3 -1.8 -2.3 V
I GSS Gate Leakage Current V GS=±20V, VDS=0V - - ±10 µA
V GS=-10V, ID S=-20A - 4.9 6.1
RDS(ON ) c Drain-Source On-state Resistance mΩ
V GS=-4.5V, I DS=-10A - 8 11
Diode Characteristics
VSD c Diode Forward Voltage I SD =-1A, VGS=0V - -0.7 -1 V
d
t rr Reverse Recovery Time - 19 - ns
d I SD =-20A, dl SD/dt=100A/µs
Q rr Reverse Recovery Charge - 6 - nC
d
Dynamic Characteristics
Rg Gate Resistance V GS=0V, VDS =0V,F=1MHz - 3 - Ω
C iss Input Capacitance V GS=0V, - 2862 -
Coss Output Capacitance V DS=-15V, - 593 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 470 -
t d(ON) Turn-on Delay Time - 20 -
tr Turn-on Rise Time V DD =-15V, R L=15Ω, - 19 -
I DS=-1A, VGEN =-10V, ns
td(OFF) Turn-off Delay Time R G=6Ω - 93 -
tf Turn-off Fall Time - 56 -
d
Gate Charge Characteristics
V DS=-15V, VGS=-4.5V,
Qg Total Gate Charge - 30 -
I DS=-20A
Qg Total Gate Charge 60 nC
V DS=-15V, VGS=-10V,
Qgs Gate-Source Charge - 2.8 -
I DS=-20A
Qgd Gate-Drain Charge - 20 -
Note c：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note d：Guaranteed by design, not subject to production testing.

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Rev. A.3 - May, 2015
SM3331PSQG ®

Typical Operating Characteristics

Power Dissipation Drain Current

70 50

60
40

50

-ID - Drain Current (A)

Ptot - Power (W)

30
40

30
20

20
10
10
o o
TC=25 C TC=25 C,V G=-10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

500 3
Normalized Transient Thermal Resistance

1 Duty = 0.5

0.2
0.1
100 0.1
it

0.05
Lim
-ID - Drain Current (A)

n)

0.02
s( o

0.01
Rd

0.01
1ms

10 1E-3

10ms
1E-4 Single Pulse

DC
o o
TC=25 C RθJC :2 C/W
1 1E-5
0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1

-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

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Rev. A.3 - May, 2015
SM3331PSQG ®

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

50 14
VGS=-4,-5,-6,-7,-8,-9,-10V

12
40

RDS(ON) - On - Resistance (mΩ)

-3.5V
10
-ID - Drain Current (A)

VGS=-4.5V
30
8

6
20 VGS=-10V

4
10 -3V
2

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 8 16 24 32 40

-VDS - Drain-Source Voltage (V) -ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

30 1.6
IDS=-20A IDS=-250µA

1.4
25
Normalized Threshold Voltage
RDS(ON) - On Resistance (mΩ)

1.2
20

1.0
15
0.8

10
0.6

5
0.4

0 0.2
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.3 - May, 2015
SM3331PSQG ®

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

2.0 50
VGS = -10V
1.8 IDS = -20A
Normalized On Resistance

1.6
10

-IS - Source Current (A)

o
T j=150 C
1.4

1.2 o
Tj=25 C
1.0
1
0.8

0.6

0.4
o
RON@Tj=25 C: 4.9mΩ
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

4500 10
Frequency=1MHz VDS=-15V
4000 9 I =-20A
DS

8
-VGS - Gate - source Voltage (V)

3500
7
C - Capacitance (pF)

3000
Ciss
6
2500
5
2000
4
1500
3
1000
2
Coss
Crss
500 1

0 0
0 5 10 15 20 25 30 0 10 20 30 40 50 60

-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

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Rev. A.3 - May, 2015
SM3331PSQG ®

Avalanche Test Circuit and Waveforms

VDS tAV
L

DUT EAS

RG VDD
VDD
tp IAS
IL VDS
0.01Ω
tp VDSX(SUS)

Switching Time Test Circuit and Waveforms

VDS
RD
td(on) tr td(off) tf
DUT
VGS
VGS 10%
RG
VDD
tp

90%
VDS

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Rev. A.3 - May, 2015
SM3331PSQG ®

Disclaimer

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making

great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.

All information which is shown in the datasheet is based on Sinopower’s

research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.

In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.

The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.

The products are not designed or manufactured to be used with any

equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.

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Rev. A.3 - May, 2015
SM3331PSQG ®

Classification Profile

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Rev. A.3 - May, 2015
SM3331PSQG ®

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)

Average ramp-up rate

3 °C/second max. 3°C/second max.
(Tsmax to TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 See Classification Temp in table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)

3 3
Package Volume mm Volume mm
Thickness <350 ≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package Volume mm 3 Volume mm 3 Volume mm 3
Thickness <350 350-2000 >2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax
HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C

Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080

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Rev. A.3 - May, 2015